KR20150059189A - Organic Light Emitting Display Device and Method of manufacturing the same - Google Patents

Abstract

An organic light emitting display device according to the present invention includes: a substrate on which a light emission region and a non-emission region which forms the surroundings of the light emission region are defined; a thin film transistor which is formed on the light emission region of the substrate by including a gate electrode, an active layer, a source electrode, and a drain electrode; a protection layer which includes a contact hole to expose the drain electrode on the front side of the substrate including the thin film transistor; an anode electrode which is connected to the drain electrode through the contact hole in the light emission region of the substrate; and a bank layer which is formed in the non-emission region of the substrate. The bank layer includes a first groove with a hole on the center thereof. Thus, the present invention prevents an organic layer from being transferred to the light emission region (PA) of an adjacent pixel, to which the organic layer is not to be transferred.

Description

[0001] The present invention relates to an organic light emitting display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED) display, and more particularly, to an OLED display capable of effectively transferring organic materials to a substrate in forming an organic light emitting layer and a method of manufacturing the same.

Recently, the importance of information display devices has been increasing with the development of multimedia. (LCD), a plasma display panel (PDP), an organic light emitting display (OLED) display device (Organic Light Emitting Display) instead of a conventional cathode ray tube (CRT) Diodes (OLEDs), and other flat panel display devices have been commercialized.

Of these flat panel display devices, organic light emitting display devices include self-emitting self-luminous flat panel display devices including an organic light emitting layer. These self-emitting flat panel display devices have advantages of high response speed, high luminous efficiency, high luminance and wide viewing angle, , Smart phones, portable display devices, and portable information devices. The organic light emitting display device may be driven by a passive matrix method without a separate thin film transistor and an active matrix method using a thin film transistor for each pixel active matrix) method. In recent years, active matrix organic light emitting display devices for display manufacturing requiring a high resolution or a large screen have been studied and developed due to limitations in resolution, power consumption, and life span of the passive matrix method.

In forming an organic light emitting layer of such an active matrix organic light emitting display device, a transfer method using a laser beam suitable for a large area substrate has been attracting attention.

1A and 1B are cross-sectional views illustrating a method of forming an organic light emitting layer in an OLED display according to a related art.

1A and 1B, an OLED display includes a substrate 10, a thin film transistor (TFT) formed on the substrate 10, a passivation layer 15, an anode electrode 16, a bank layer 17, And an organic light emitting layer (33).

The thin film transistor (TFT) formed on the substrate 10 includes a gate electrode 11, a gate insulating film 12, an active layer 13, a source electrode 14a and a drain electrode 14b.

The gate electrode 11 is formed on the substrate 10 and the gate insulating film 12 is formed on the entire surface of the substrate 10 including the gate electrode 11.

The active layer 13 is formed in a region overlapping the gate electrode 11 on the gate insulating film 12, and may be formed of an oxide semiconductor.

The source electrode 14a and the drain electrode 14b are formed on the gate insulating film 12 and the active layer 13 so as to face each other.

A protective film 15 is formed on the entire surface of the substrate 10 including the thin film transistor TFT.

The protective film 15 has contact holes for exposing the drain electrodes 14b.

The anode electrode 16 is formed on the protective film 15 and is electrically connected to the drain electrode 14b through the contact hole.

The bank layer 17 may be formed on the protective layer 15 to isolate the anode electrodes 16 and distinguish the organic light emitting layer 33 of each pixel.

In the process of forming the organic light emitting layer 33, an intermediate substrate 30 including the substrate 10, the organic layer 33a, and the absorbing layer 32 is attached.

Next, a laser is irradiated onto the intermediate substrate 30 through a mask including a transmissive region and a non-transmissive region with respect to the laser (not shown) to expose the anode electrode 16 exposed in the bank layer 17 The organic material layer 33a is transferred to form the organic light emitting layer 33. [

The organic light emitting display according to the related art has the following problems.

First, the bank layer 17 on the substrate 10 and the organic material 33a are in contact with each other while the substrate 10 and the intermediate substrate 30 are in close contact with each other, The organic material 33a may be transferred to the layer 17 and the organic material 33a may be transferred to the light emitting area PA of the adjacent pixel which should not be transferred.

Secondly, there is a problem that foreign matter is generated due to the scattering of the organic material 33a in the process of attaching and detaching the intermediate substrate 30 which has been in contact with the substrate 10.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and it is an object of the present invention to provide an intermediate substrate 30, which is in contact with the substrate 10, Which can prevent defects due to scattering of the organic material (33a) irradiated on the bank layer (17) in a process of removing the organic layer (33a) and a manufacturing method thereof.

In order to attain the above object, the present invention provides a thin film transistor including a substrate defining a light emitting region and a non-emitting region which forms a peripheral portion of the light emitting region, a thin film including a gate electrode, an active layer, a source electrode, and a drain electrode in a light emitting region on the substrate And a contact hole exposing the drain electrode on a front surface of the substrate including the thin film transistor, an anode electrode connected to the drain electrode through the contact hole in a light emitting region on the substrate, And a bank layer formed in a non-light emitting region, wherein the bank layer has a first groove with a center hole formed thereon.

Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a non-emission region forming a peripheral portion of the light emitting region and the light emitting region is defined; Forming a thickness compensation layer including a third groove formed in the front surface of the non-emission region, the third groove having the non-emission region opened, and forming a protective film including a second groove in the non-emission region on the thickness compensation layer A step of forming an anode electrode in a light emitting region on the protective film, a step of forming a bank layer in a non-light emitting region on the substrate, and a step of forming an organic light emitting layer on the anode electrode, And an organic light emitting layer formed on the first electrode, It provides a method for producing the device.

Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a non-emission region forming a peripheral portion of the light emitting region and the light emitting region is defined; Forming a protective film including a contact hole exposing the drain electrode on a front surface of the substrate and a second groove formed in the non-emitting region, forming an anode electrode connected to the drain electrode through the contact hole in the light emitting region on the substrate A step of forming a bank layer in a non-emission region on the substrate, and a step of forming an organic light emitting layer on the anode electrode, wherein the bank layer has a first groove The organic light emitting display device according to claim 1,

Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a non-emission region forming a peripheral portion of the light emitting region and the light emitting region is defined; And a contact hole exposing the drain electrode on the entire surface of the substrate, a contact hole formed on the protective film to expose the drain electrode, and a second groove in which the non-light emitting region is opened A step of forming an anode electrode connected to the drain electrode through the contact hole on the thickness compensation layer, a step of forming a bank layer in a non-emission region on the substrate, Forming an organic light emitting layer on the anode electrode, And a first groove that is formed at a higher depth than the first groove.

Other features and advantages of the invention will be set forth in the description which follows, or may be obvious to those skilled in the art from the description and the claims.

According to the present invention as described above, the following effects can be obtained.

The present invention can improve the problem that the organic material 33a can be transferred to the light emitting area PA of the adjacent pixel which should not be transferred by forming the bank layer including the first groove which is formed deeper than the anode electrode have.

The present invention is characterized in that a bank layer including a first groove which is formed deeper than an anode electrode is formed so as to prevent the organic substrate (33a) from scattering due to scattering of the organic substance (33a) It is possible to solve the problem that foreign matter is generated.

In addition, other features and advantages of the present invention may be newly understood through embodiments of the present invention.

1A and 1B are cross-sectional views illustrating a method of forming an organic light emitting layer in an OLED display according to a related art.
2 is a schematic cross-sectional view of an OLED display according to a first embodiment of the present invention.
3A and 3B are cross-sectional views illustrating a method of forming an organic light emitting layer in an organic light emitting diode display according to a first embodiment of the present invention.
4 is a schematic cross-sectional view of an OLED display according to a second embodiment of the present invention.
5 is a schematic cross-sectional view of an OLED display according to a third embodiment of the present invention.
6A to 6E are schematic manufacturing process diagrams illustrating a manufacturing process of the OLED display according to the first embodiment of the present invention.
7A to 7F are schematic manufacturing process diagrams illustrating a manufacturing process of an OLED display according to a second embodiment of the present invention.
8A to 8F are schematic manufacturing process diagrams illustrating a manufacturing process of an OLED display according to a third embodiment of the present invention.

It should be noted that, in the specification of the present invention, the same reference numerals as in the drawings denote the same elements, but they are numbered as much as possible even if they are shown in different drawings.

Meanwhile, the meaning of the terms described in the present specification should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms.

It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one.

The term "on" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a schematic cross-sectional view of an OLED display according to a first embodiment of the present invention.

2, the OLED display according to the first embodiment of the present invention includes a substrate 100, a thin film transistor (TFT) formed on the substrate 100, a passivation layer 150, an anode electrode 160, A bank layer 170, and an organic light emitting layer 330. [

The substrate 100 may be defined as a light emitting region PA and a non-emitting region OA.

The substrate 100 is formed of a transparent insulating substrate made of glass, quartz, ceramics, plastic, or the like. However, the embodiment of the present invention is not limited thereto. Further, the substrate 100 may be formed of a flexible substrate when it is made of plastic or the like.

The thin film transistor TFT may be formed in the emission region PA on the substrate 100 and may include a gate electrode 110, a gate insulating layer 120, an active layer 130, a source electrode 140a, (140b).

A gate electrode 110 may be formed on the substrate 100.

The gate electrode 110 may be formed of at least one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Alloy, and may be composed of a single layer of the metal or alloy or multiple layers of two or more layers.

A gate insulating layer 120 may be formed on the entire surface of the substrate 100 including the gate electrode 110.

The gate insulating layer 120 may be made of an inorganic insulating material such as silicon oxide or silicon nitride but may be formed of an organic insulating material such as photo acryl or benzocyclobutene have.

The active layer 130 is patterned on the gate insulating layer 120 while being overlapped with the gate electrode 110.

The active layer 130 may be formed of an oxide semiconductor such as In-Ga-Zn-O (IGZO), but is not limited thereto.

The source electrode 140a and the drain electrode 140b are formed on the active layer 130 so as to face each other and to be spaced apart from each other.

The source electrode 140a and the drain electrode 140b may be formed of one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, (Cu), or an alloy thereof, and may be composed of a single layer of the metal or alloy or multiple layers of two or more layers.

The source electrode 140a is connected to a driving power source line (not shown), and the drain electrode 140b is connected to the anode electrode 160 and is driven by a driving power source (not shown) The amount of current flowing to the light emitting layer 330 is controlled.

The passivation layer 150 may include a contact hole CH exposing the drain electrode 140b on the entire surface of the substrate 100 including the thin film transistor TFT.

The passivation layer 150 may have a second groove H2 in a region overlapping the bank layer 170 of the light emitting region OA.

At this time, the second groove H2 is formed to be deeper than the anode electrode 160.

More specifically, the height h1 of the second groove H2 is greater than the height h2 of the anode electrode 160 formed on the passivation layer 150 with respect to the gate insulating layer 120 of the light emitting region OA. Lt; / RTI >

That is, the passivation layer 150 may include a contact hole CH and a second groove H2. The contact hole CH may expose the drain electrode 140b, (H 2) may be formed to be deeper than the anode electrode 160 so that the first groove H 1 of the bank layer 170 may be formed.

The passivation layer 150 may be formed of an acrylic compound.

The anode electrode 160 is patterned in the light emitting region PA on the substrate 100.

The anode electrode 160 may be electrically connected to the drain electrode 140b through the contact hole CH.

Here, the anode 160 may be formed of a transparent metal such as ITO (indium tin oxide) or IZO (indium zinc oxide).

The bank layer 170 is formed in the non-emission region OA on the substrate 100. [

The bank layer 170 is formed with a first groove H1 having a center hole.

The first groove H1 overlaps with the second groove H2 and the first groove H1 is formed to be deeper than the anode electrode 160. [

That is, since the bank layer 170 has the first groove H1 formed more deeply than the central anode electrode 160, the organic light emitting layer 330 is formed by being transferred to the light emitting area PA of the adjacent pixel . A detailed description thereof will be described later.

The organic light emitting layer 330 is formed on the anode electrode 160.

At this time, although not shown, the hole injecting layer, the hole transporting layer, the organic light emitting layer, the electron transporting layer, and the electron injecting layer may be sequentially stacked. However, one or two or more layers of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be omitted. The light emitting unit 1120 may be formed in various forms other than the combination of layers as described above.

3A and 3B are cross-sectional views illustrating a method of forming the organic emission layer 330 in the OLED display according to the first embodiment of the present invention.

3A, the organic light emitting display according to the first embodiment of the present invention can form the organic light emitting layer 330 through a transfer method using a laser beam.

First, an intermediate substrate 300 including an absorbing layer 320 and an organic layer 330a sequentially formed on a first base substrate 310 is prepared.

Next, the intermediate substrate 300 is placed on the bank layer 170.

The intermediate substrate 300 includes a first base substrate 310 facing the mask 400 and an absorbing layer 320 interposed between the first base substrate 310 and the organic layer 330a. have.

At this time, the organic material layer 330a and the absorption layer 320 may be positioned to correspond to the size of the first base substrate 310, but may be narrower.

In forming the absorption layer 320 and the organic layer 330a on the first base substrate 310, a sputtering method may be used, but the present invention is not limited thereto. At this time, the absorption layer 320 formed on the first base substrate 310 may be a metal material having excellent permeability to a laser.

The organic material layer 330a is formed of an organic material of the same color. For example, an organic material having any one of red, green, and blue colors can be transferred to each sub-pixel.

Next, the mask 400 is placed on the intermediate substrate 300.

The mask 400 may include a second base substrate 410 and a metal layer 420 disposed on the second base substrate 410. The metal layers 420 may be spaced apart from each other on the second base substrate 410 to expose the anode electrode 160. The metal layer 420 having the openings may be made of a material that can be impermeable to the laser and non-absorbent. Accordingly, when the laser is irradiated, other portions except the exposed region through the opening are blocked or reflected by the metal layer 420.

At this time, although not shown, a multilayer in which a dielectric material such as titanium (TiO2) and silica (SiO2) are laminated may be used in place of the metal layer 420.

Next, a laser is irradiated to the intermediate substrate 300 through the mask 400 to form an organic light emitting layer 330.

Specifically, the absorption layer 320 is expanded in volume by a laser to attach the organic layer 330a to the anode electrode 160 to form the organic light emitting layer 330 on the anode electrode 160.

As shown in FIG. 3B, the OLED display according to the first embodiment of the present invention includes a bank layer 170 having a first groove H1 having a center hole.

The first groove H1 is formed to be deeper than the anode electrode 16 so that the organic layer 330a is formed in the first groove H1 even when the absorption layer 320 is bulged by the laser, Is not formed.

That is, according to the present invention, the bank layer 170 including the first groove H1, which is formed deeper than the anode electrode 160, is formed so that the light emitting area PA of the adjacent pixel, which should not be transferred, ) Can be improved.

The scattering of the organic material layer 330a that may occur in the process of attaching and detaching the intermediate substrate 300 that has been in contact with the bank layer 170 formed on the substrate 100 is reduced to the first groove H1 So that the problem of foreign matter failure due to this can be solved.

Hereinafter, repetitive description of the repetitive portions in the materials, structures and the like of each constitution will be omitted.

4 is a schematic cross-sectional view of an organic light emitting device according to a second embodiment of the present invention, except that the thin film transistor (TFT) and the passivation layer 150 further include a thickness compensation layer 200, Is the same as the organic light emitting display according to Fig. Therefore, the same reference numerals are assigned to the same components, and repetitive description of the same components will be omitted.

4, the OLED display according to the second embodiment of the present invention includes a substrate 100, a thin film transistor (TFT) formed on the substrate 100, a thickness compensation layer 200, a protection layer 150 An anode electrode 160, a bank layer 170, and an organic light-emitting layer 330. The organic light-

The thickness compensating layer 200 is patterned between the thin film transistor TFT and the passivation layer 150.

The thickness compensating layer 200 has a third groove H3 in which a region overlapping the second groove H2 in the non-emitting region OA is opened.

That is, the third groove H3 included in the thickness compensating layer 200 and the second groove H2 included in the protective layer 150 are formed in the overlapped region, The first groove H1 may be provided by the second groove H2 and the third groove H3.

At this time, the first groove H1 is formed deeper than the anode electrode 160.

Accordingly, the organic light emitting diode display according to the second embodiment of the present invention can form a bank layer 170 including a first groove H1 which is formed deeper than the anode electrode 160, The organic layer 330a can be transferred to the light emitting area PA of the pixel.

The scattering of the organic material layer 330a that may occur in the process of attaching and detaching the intermediate substrate 300 that has been in contact with the bank layer 170 formed on the substrate 100 is reduced to the first groove H1 So that the problem of foreign matter failure due to this can be solved.

5 is a schematic cross-sectional view of an organic light emitting device according to a third embodiment of the present invention, except that the thickness compensation layer 200 is additionally provided between the protective layer 150 and the anode electrode 160, Is the same as the organic light emitting display according to Fig. Therefore, the same reference numerals are assigned to the same components, and repetitive description of the same components will be omitted.

5, the organic light emitting display according to the third embodiment of the present invention includes a substrate 100, a thin film transistor (TFT) formed on the substrate 100, a passivation layer 150, a thickness compensation layer 200 An anode electrode 160, a bank layer 170, and an organic light-emitting layer 330. The organic light-

The protective layer 150 included in the OLED display according to the third embodiment of the present invention is not provided with a hole in the first or second embodiment.

The thickness compensating layer 200 may be formed between the passivation layer 150 and the anode electrode 160 so that the bank layer 170 may have a first groove H1.

More specifically, the thickness compensating layer 200 has a second groove H2 opened in the non-emission region OA.

An anode electrode 160 is formed on the light emitting area PA on the thickness compensation layer 200 and a bank layer 170 is formed on the non-emission area OA on the thickness compensation layer 200.

The bank layer 170 has a first groove H1 in a region overlapping with the second groove H2 and the first groove H1 is formed deeper than the anode electrode 160 .

Accordingly, the organic light emitting diode display according to the third embodiment of the present invention includes the bank layer 170 including the first groove H1 formed to be deeper than the anode electrode 160, The organic layer 330a can be transferred to the light emitting area PA of the pixel.

The scattering of the organic material layer 330a that may occur in the process of attaching and detaching the intermediate substrate 300 that has been in contact with the bank layer 170 formed on the substrate 100 is reduced to the first groove H1 So that the problem of foreign matter failure due to this can be solved.

FIGS. 6A to 6E are schematic manufacturing steps of a manufacturing process of the organic light emitting diode display according to the first embodiment of the present invention, which is a manufacturing process diagram of the organic light emitting display according to FIG.

As shown in FIG. 6A, a thin film transistor TFT is formed in the light emitting region PA on the substrate 100.

The thin film transistor TFT includes a gate electrode 110, a gate insulating film 120, an active layer 130, a source electrode 140a and a drain electrode 140b which are sequentially stacked on a substrate 100 have.

Although not shown in the figure, the process of forming one thin film is as follows. A thin film is deposited on an arbitrary layer. A photosensitive film is coated on the thin film, and then the photosensitive film is selectively removed through an exposure process and a developing process using a mask to form a photosensitive film pattern. Then, only one thin film is formed through an etching process using the photoresist pattern as a blocking film.

The method of manufacturing the thin film transistor (TFT) fabricates a layer through the thin film deposition, the photoresist film application, the exposure, the development, and the etching process.

Next, as shown in FIG. 6B, the protective film 150 is patterned through a single mask process using a diffraction mask or a halftone mask 950.

Specifically, a protective film material 150a is deposited on a substrate 100 on which a thin film transistor (TFT) is formed, a diffraction or halftone mask 950 is placed on the protective film material 150a, and then light is irradiated .

The diffraction or halftone mask 950 includes a transmissive portion 950c, a transflective portion 950b, and a blocking portion 950a. The transmissive portion 950c transmits light, and the transflective portion 950b transmits only a part of light. The blocking portion 950a blocks light transmission.

Thereafter, the protective film material 150a irradiated with the light is developed to form the protective film 150 in a pattern. The protective film material 150a corresponding to the transmissive portion 950c is all removed by the developing process and the protective film material 150a corresponding to the transflective portion 950b is partially removed by the developing process and the blocking portions 950a ) Is not removed by the developing process but remains. Thus, a protective film 150 is completed which includes a region where a pattern is not formed, a region where a pattern is formed at a relatively low depth, and a region where a pattern is formed at a relatively high depth.

Here, the region where the pattern is formed at a relatively low depth is the second groove H2, and the region where the pattern is formed at a relatively high depth is the contact hole CH.

Next, as shown in FIG. 6C, the bank layer 170 is pattern-formed on the non-emission region OA on the substrate 100. [

The bank layer 170 may have a first groove H1 in a region overlapping with the second groove H2.

Next, referring to FIG. 6D, an intermediate substrate 300 (not shown) is formed on the second base substrate 410 through a mask 400 including a metal layer 420 including a transmissive region and a non- And the organic layer 330a is transferred onto the anode electrode 160 to form the organic light emitting layer 330. [

The intermediate substrate 300 includes a first base substrate 310 opposed to the mask 400 and an absorbing layer 320 interposed between the first base substrate 310 and the organic layer 330a Can be used.

6E, the bank layer 170 has a middle first groove H1, and the organic light emitting layer 330 is formed in the first groove H1 and the adjacent light emitting area PA .

FIGS. 7A to 7F are schematic manufacturing steps of a manufacturing process of the OLED display according to the second embodiment of the present invention, which is related to the manufacturing process of the OLED display according to FIG.

The fabrication process according to FIGS. 7A to 7F is the same as the fabrication process according to FIGS. 6A to 6E, except that the thickness compensation layer 200 is additionally provided between the thin film transistor (TFT) and the protective film 150. Hereinafter, repetitive description of the same manufacturing process will be omitted.

Since the process of FIG. 7A is the same as the process of FIG. 6A described above, a detailed description thereof will be omitted.

7B, the thickness compensating layer 200 is pattern-formed on the light emitting area PA between the thin film transistor TFT and the passivation layer 150. As shown in FIG.

At this time, a pattern is formed so as to have a third groove H3 opened in the non-emission area OA on the substrate 100. [

Next, as shown in FIG. 7C, a protective film material is deposited on the substrate 100. At this time, a second groove (H2) is formed in an area overlapping the third groove (H3).

Next, a contact hole CH exposing the drain electrode 140b is patterned through a mask process.

7D, the anode electrode 160 is patterned in the light emitting region PA on the passivation layer 150. Next, as shown in FIG.

Next, a bank layer 170 is pattern-formed on the non-emission region OA on the passivation layer 150. The bank layer 170 may have a first groove H1 by the second groove H2 and the third groove H3. That is, the first groove H1, the second groove H2, and the third groove H3 are formed in the overlapped region.

7E and 7F are the same as the processes of FIGS. 6D and 6E described above, a detailed description thereof will be omitted.

FIGS. 8A to 8F are schematic manufacturing steps illustrating a manufacturing process of the OLED display according to the third embodiment of the present invention, which is related to the manufacturing process of the OLED display according to FIG.

The manufacturing process according to FIGS. 8A to 8F is the same as the manufacturing process according to FIGS. 6A to 6E, except that the thickness compensation layer 200 is additionally provided between the protective film 150 and the anode electrode 160. Hereinafter, repetitive description of the same manufacturing process will be omitted.

Since the process of FIG. 8A is the same as the process of FIG. 6A described above, a detailed description thereof will be omitted.

As shown in FIG. 8B, a protective film 150 is formed on the substrate 100 by patterning.

At this time, the passivation layer 150 is formed to have a contact hole CH exposing the drain electrode 140b.

8C, a contact hole CH exposing the drain electrode 140b and a second groove H2 opening in the non-emission region OA are formed on the passivation layer 150, The thickness compensation layer 200 is pattern-formed.

In addition to such a process, a contact hole CH and a non-light emitting region OA, which expose the drain electrode 140b using a halftone mask, are sequentially formed after sequentially stacking the passivation film material and the thickness compensating layer material, The thickness compensating layer 200 having the second groove H2 that is opened in the first groove H2 may be formed using one mask.

8D, the anode electrode 160 is pattern-formed on the light-emitting area PA on the thickness compensation layer 200. Next, as shown in FIG.

Next, a bank layer 170 having a first groove H1 is pattern-formed on the non-emission region OA on the substrate 100. [

At this time, the first groove H1 is formed in a region overlapping with the second groove H2, and the depth of the first groove H1 may be formed to be lower than the anode electrode 160.

8E and 8F are the same as the processes of FIGS. 6D and 6E described above, a detailed description thereof will be omitted.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.

For example, in all of the embodiments described above, a thin film transistor (TFT) is described as a staggered type in which the gate electrode 110 and the source and drain electrodes 140a and 140b are disposed between the active layers 130 However, in the modified embodiment, the gate electrode 110 and the source and drain electrodes 140a and 140b may be formed in a coplanar type having one side of the active layer 130.

It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100: substrate TFT: thin film transistor
110: gate electrode 120: gate insulating film
130: active layer 140a: source electrode
140b: drain electrode 150: protective film
CH: Contact hole H2: 2nd groove
160: anode electrode 170: bank layer
H1: first groove 330: organic light emitting layer

Claims (10)

Emitting region and a peripheral region of the light-emitting region;
A thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode in a light emitting region on the substrate;
A protective film formed on a front surface of the substrate including the thin film transistor, the contact hole exposing the drain electrode;
An anode electrode connected to the drain electrode through the contact hole in a light emitting region on the substrate; And
And a bank layer formed in the non-emission region on the substrate,
Wherein the bank layer is provided with a first groove having a center hole. The method according to claim 1,
Wherein the protective film has a second groove in which a hole is formed in a region overlapping with the bank layer,
Wherein the first groove is formed to be deeper than the anode electrode. The method according to claim 1,
Further comprising a thickness compensation layer between the thin film transistor and the protective film,
Wherein the protective film has a second groove in which a hole is formed in a region overlapping with the bank layer,
Wherein the thickness compensating layer has a third groove in which an area overlapped with the second groove is opened. The method according to claim 1,
Further comprising a thickness compensation layer between the protective film and the anode electrode,
Wherein the thickness compensating layer has a second groove in which a region overlapping with the first groove is opened. Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a non-emission region forming a periphery of the emission region and the emission region is defined;
Forming a protective layer on the entire surface of the substrate including the thin film transistor, the protective layer including a contact hole exposing the drain electrode and a second groove formed in the non-light emitting region;
Forming an anode electrode connected to the drain electrode through the contact hole in a light emitting region on the substrate;
Forming a bank layer in a non-emission region on the substrate; And
And forming an organic light emitting layer on the anode electrode;
Wherein the bank layer includes a first groove formed to be deeper than the center electrode of the anode electrode. 6. The method of claim 5,
Wherein the first groove and the second groove are formed in an overlapped region. Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a non-emission region forming a periphery of the emission region and the emission region is defined;
Forming a thickness compensating layer on the entire surface of the substrate including the thin film transistor, the thickness compensating layer including a third groove in which the non-emitting region is opened;
Forming a protective film on the thickness compensating layer, the protective film including a second groove having a hole in the non-emitting region;
Forming an anode electrode in a light emitting region on the protective film;
Forming a bank layer in a non-emission region on the substrate; And
And forming an organic light emitting layer on the anode electrode,
Wherein the bank layer includes a first groove formed to be deeper than the center electrode of the anode electrode. 8. The method of claim 7,
Wherein the first groove, the second groove, and the third groove are formed in the overlapped region. Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a non-emission region forming a periphery of the emission region and the emission region is defined;
Forming a protective film on the entire surface of the substrate including the thin film transistor, the protective film having a contact hole exposing the drain electrode;
Forming a thickness compensating layer including a contact hole formed on the protective film to expose the drain electrode and a second groove having the non-emitting region opened;
Forming an anode electrode on the thickness compensation layer, the anode electrode being connected to the drain electrode through the contact hole;
Forming a bank layer in a non-emission region on the substrate; And
And forming an organic light emitting layer on the anode electrode,
Wherein the bank layer includes a first groove formed to be deeper than the center electrode of the anode electrode. 10. The method of claim 9,
Wherein the first groove and the second groove are formed in an overlapped region.

Images