KR102082428B1 - Organic Light Emitting Display Device and Method of manufacturing the same - Google Patents

Abstract

The organic light emitting display device according to the present invention is a thin film transistor formed by including a substrate, an active layer, a source electrode, and a drain electrode on a substrate on which a light emitting region and a non-emission region constituting a peripheral portion of the light emitting region are defined, and on the substrate , A protective film formed with a contact hole exposing the drain electrode on the front surface of the substrate including the thin film transistor, an anode electrode formed to be connected to the drain electrode through the contact hole in a light emitting region on the substrate, and a ratio on the substrate It includes a bank layer formed in the light emitting region, the bank layer is characterized in that the first hole is formed with a center hole, the organic layer can be transferred to the light emitting area (PA) of the adjacent pixel should not be transferred Problems can be improved.

Description

Organic light emitting display device and its manufacturing method {Organic Light Emitting Display Device and Method of manufacturing the same}

The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device capable of effectively transferring an organic substance to a substrate in forming an organic light emitting layer and a manufacturing method thereof.

Recently, the importance of information display devices has increased with the development of multimedia. In response to this, the existing display element, a cathode ray tube (CRT), is replaced with a liquid crystal display device (LCD), a plasma display panel (PDP), and an organic light emitting device (Organic Light Emitting). Diode (OLED) and other flat panel display devices have been commercialized.

Among these flat panel display elements, the organic light emitting display device includes an organic light emitting layer and is a self-luminous flat panel display element that emits light by itself, and has a fast response speed, a high luminous efficiency, a high brightness, and a wide viewing angle. , It is widely used as a display device such as a smart phone, a portable display device, and a portable information device. The driving method of the organic light emitting display device includes a passive matrix method without a separate thin film transistor and an active matrix having a thin film transistor that opens and closes each pixel for each pixel ( active matrix). Since the passive matrix method has many limited factors such as resolution, power consumption, and lifetime, an active matrix type organic light emitting display device for manufacturing a display requiring high resolution or a large screen has been recently researched and developed.

In forming the organic light emitting layer of such an active matrix type organic light emitting display device, a transfer method using a laser beam suitable for a large area substrate has attracted attention.

1A and 1B are cross-sectional views showing a method of forming an organic emission layer in an organic light emitting display device according to the related art.

1A and 1B, an organic light emitting display device includes a substrate 10, a thin film transistor (TFT) formed on the substrate 10, a protective film 15, an anode electrode 16, and a bank layer 17. And an organic emission layer 33.

The thin film transistor TFT formed on the substrate 10 includes a gate electrode 11, a gate insulating film 12, an active layer 13, a source electrode 14a, and a drain electrode 14b.

The gate electrode 11 is formed on the substrate 10, and the gate insulating layer 12 is formed on the entire surface of the substrate 10 including the gate electrode 11.

The active layer 13 is formed in a region overlapping the gate electrode 11 on the gate insulating layer 12 and may be formed of an oxide semiconductor.

The source electrode 14a and the drain electrode 14b are formed to be spaced apart from each other on the gate insulating layer 12 and the active layer 13.

A protective film 15 is formed on the entire surface of the substrate 10 including the thin film transistor (TFT).

The passivation layer 15 is provided with a contact hole to expose the drain electrode 14b.

The anode electrode 16 is formed on the passivation layer 15 and is electrically connected to the drain electrode 14b through the contact hole.

The bank layer 17 may be formed on the passivation layer 15 to insulate between the anode electrodes 16 and distinguish the organic emission layer 33 of each pixel.

In the process of forming the organic light emitting layer 33, first, the substrate 10 and the intermediate substrate 30 including the organic material layer 33a and the absorption layer 32 are bonded.

Next, although not shown, on the anode electrode 16 exposed in the bank layer 17 by irradiating the laser to the intermediate substrate 30 through a mask including a transmissive region and a non-transmissive region for a laser. The organic material layer 33a is transferred to form the organic emission layer 33.

The organic light emitting display device according to the related art has the following problems.

First, the bank formed on the non-light-emitting region OA because the bank layer 17 on the substrate 10 and the organic material 33a are in contact with the substrate 10 and the intermediate substrate 30 in close contact. The organic material 33a may be transferred to the layer 17, and the organic material 33a may also be transferred to the emission area PA of an adjacent pixel that should not be transferred.

Second, in the process of detaching the intermediate substrate 30 that has been in contact with the substrate 10, there is a problem that a foreign matter defect occurs due to scattering of the organic material 33a.

The present invention is designed to solve the above-described conventional problems, and the present invention limits the transfer region of the organic material 33a to prevent other pixels from developing adjacent pixels, and the intermediate substrate 30 in contact with the substrate 10 An object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which can prevent defects due to scattering of the organic material (33a) irradiated to the bank layer (17) in the process of desorption.

In order to achieve the above object, the present invention is a thin film formed by including a substrate having a light emitting region and a non-emissive region forming a peripheral portion of the light emitting region, a gate electrode, an active layer, a source electrode, and a drain electrode in the light emitting region on the substrate A transistor, a protective film formed with a contact hole exposing the drain electrode on the front surface of the substrate including the thin film transistor, an anode electrode formed to be connected to the drain electrode through the contact hole in the light emitting region on the substrate, and on the substrate It provides an organic light emitting display device comprising a bank layer formed in the non-emission region, the bank layer is provided with a first hole formed in the middle hole.

The present invention also includes a process of forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a light emitting region and a non-emissive region forming a periphery of the light emitting region are defined, a substrate including the thin film transistor Forming a thickness compensation layer including a third groove in which the non-emission region is open while being formed on the front surface of the image, and forming a protective film including a second groove in the non-emission region on the thickness compensation layer And a process of forming an anode electrode in a light emitting region on the protective film, a process of forming a bank layer in a non-light emitting region on the substrate, and a process of forming an organic light emitting layer on the anode electrode. It provides a method of manufacturing an organic light emitting display device, characterized in that it includes a first groove formed deeper than the anode electrode.

The present invention also includes a process of forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a light emitting region and a non-emissive region forming a periphery of the light emitting region are defined, a substrate including the thin film transistor A process of forming a protective layer including a contact hole exposing the drain electrode on the front surface of the image and a second groove formed in the non-emission region, and forming an anode electrode connected to the drain electrode through the contact hole in the light emitting region on the substrate. The process includes a step of forming a bank layer in the non-emission region on the substrate, and a step of forming an organic emission layer on the anode electrode, wherein the bank layer has a first groove formed deeper than the anode electrode in the center. It provides a method for manufacturing an organic light emitting display device comprising a.

The present invention also includes a process of forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a light emitting region and a non-emissive region forming a periphery of the light emitting region are defined, a substrate including the thin film transistor A process of forming a protective film having a contact hole exposing the drain electrode on the front surface of the image, a contact hole exposing the drain electrode while being formed on the protective film, and a second groove in which the non-emission region is open. Forming a thickness compensation layer, forming an anode electrode connected to the drain electrode through the contact hole on the thickness compensation layer, forming a bank layer in a non-emission region on the substrate, and the anode electrode It may include a process of forming an organic light emitting layer on the, the bank layer may provide a method of manufacturing an organic light emitting display device characterized in that it includes a first groove formed deeper than the anode electrode in the middle.

In addition to the technical problems of the present invention mentioned above, other features and advantages of the present invention are described below, or it will be clearly understood by those skilled in the art from the description and description.

According to the present invention as described above has the following effects.

The present invention can improve the problem that the organic material 33a can be transferred to the emission area PA of an adjacent pixel that should not be transferred by forming a bank layer including a first groove deeper than the anode electrode. have.

The present invention is due to the scattering of the organic material (33a) in the process of detaching the intermediate substrate 30 in contact with the substrate 10 by forming a bank layer including a first groove formed deeper than the anode electrode It is possible to improve a problem in which a foreign body defect occurs.

In addition, other features and advantages of the present invention may be newly identified through embodiments of the present invention.

1A and 1B are cross-sectional views showing a method of forming an organic emission layer in an organic light emitting display device according to the related art.
2 is a schematic cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.
3A and 3B are cross-sectional views illustrating a method of forming an organic light emitting layer in the organic light emitting display device according to the first embodiment of the present invention.
4 is a schematic cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention.
5 is a schematic cross-sectional view of an organic light emitting display device according to a third embodiment of the present invention.
6A to 6E are schematic manufacturing process diagrams showing a manufacturing process of the organic light emitting display device according to the first embodiment of the present invention.
7A to 7F are schematic manufacturing process diagrams showing a manufacturing process of the organic light emitting display device according to the second embodiment of the present invention.
8A to 8F are schematic manufacturing process diagrams showing a manufacturing process of the organic light emitting display device according to the third embodiment of the present invention.

It should be noted that in this specification, when adding reference numerals to components of each drawing, the same components have the same number as possible, even if they are displayed on different drawings.

On the other hand, the meaning of the terms described in this specification should be understood as follows.

It should be understood that a singular expression includes a plurality of expressions unless the context clearly defines otherwise, and the terms "first", "second", etc. are intended to distinguish one component from another component, The scope of rights should not be limited by these terms.

It should be understood that terms such as “include” or “have” do not preclude the existence or addition possibility of one or more other features or numbers, steps, actions, components, parts or combinations thereof.

It should be understood that the term “at least one” includes all possible combinations from one or more related items. For example, the meaning of “at least one of the first item, the second item, and the third item” means 2 of the first item, the second item, or the third item, as well as the first item, the second item, and the third item, respectively. Any combination of items that can be presented from more than one dog.

The term "on" is meant to include not only the case where a certain component is formed on the upper surface of another component, but also when a third component is interposed between these components.

Hereinafter, preferred embodiments of the present invention designed to solve the above problems will be described in detail with reference to the accompanying drawings.

2 is a schematic cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

2, the organic light emitting display device according to the first embodiment of the present invention includes a substrate 100, a thin film transistor (TFT) formed on the substrate 100, a protective film 150, and an anode electrode 160. , A bank layer 170, and an organic emission layer 330.

The substrate 100 may be defined as a light emitting area PA and a non-light emitting area OA.

The substrate 100 is formed of a transparent insulating substrate made of glass, quartz, ceramic, and plastic. However, one embodiment of the present invention is not limited thereto. In addition, when the substrate 100 is made of plastic or the like, it may be formed of a flexible substrate.

The thin film transistor TFT may be formed in the emission area PA on the substrate 100, and the gate electrode 110, the gate insulating layer 120, the active layer 130, the source electrode 140a, and the drain electrode Including (140b).

The gate electrode 110 may be formed on the substrate 100.

The gate electrode 110 is molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodium (Nd), copper (Cu), or their It may be made of an alloy, and may be made of a single layer of the metal or alloy or multiple layers of two or more layers.

The gate insulating layer 120 may be formed on the entire surface of the substrate 100 including the gate electrode 110.

The gate insulating layer 120 may be made of an inorganic insulating material such as silicon oxide or silicon nitride, but is not limited thereto, and may be made of an organic insulating material such as photo acryl or benzocyclobutene (BCB). have.

The active layer 130 overlaps the gate electrode 110 and is patterned on the gate insulating layer 120.

The active layer 130 may be formed of an oxide semiconductor such as In-Ga-Zn-O (IGZO), but is not limited thereto.

The source electrode 140a and the drain electrode 140b are spaced apart from each other on the active layer 130 to form a pattern.

The source electrode 140a and the drain electrode 140b are molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodium (Nd), copper (Cu), or an alloy thereof, and may be formed of a single layer of the metal or alloy or multiple layers of two or more layers.

The source electrode 140a is connected to a driving power line (not shown), and the drain electrode 140b is connected to the anode electrode 160 to be driven by the driving power through the driving power line (not shown). The amount of current flowing through the light emitting layer 330 is controlled.

The passivation layer 150 may be formed with a contact hole CH exposing the drain electrode 140b on the front surface of the substrate 100 including the thin film transistor TFT.

Also, the passivation layer 150 may be formed by providing a second groove H2 in an area overlapping the bank layer 170 of the emission area OA.

At this time, the second groove H2 is formed deeper than the anode electrode 160.

More specifically, the height h1 of the second groove H2 is the height h2 of the anode electrode 160 formed on the protective layer 150 based on the gate insulating layer 120 of the emission region OA. Smaller than

That is, the passivation layer 150 is formed with a contact hole CH and a second groove H2, and the contact hole CH can expose the drain electrode 140b, and the second groove (H2) may be formed deeper than the anode electrode 160 so that the first groove H1 of the bank layer 170 may be formed.

The protective layer 150 may be formed of an acrylic-based compound.

The anode electrode 160 is patterned in the emission area PA on the substrate 100.

The anode electrode 160 may be electrically connected to the drain electrode 140b through the contact hole CH.

In this case, the anode electrode 160 may be formed of a transparent metal such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).

The bank layer 170 is formed in the non-emission area OA on the substrate 100.

The bank layer 170 is formed with a first hole H1 in which a middle hole is formed.

At this time, the first groove H1 is formed overlapping the second groove H2, and the first groove H1 is formed deeper than the anode electrode 160.

That is, the bank layer 170 has a first groove H1 formed deeper than the anode electrode 160 in the middle, so that the organic emission layer 330 is not formed by being transferred to the emission area PA of the adjacent pixel. It may not. A detailed description thereof will be described later.

The organic emission layer 330 is formed on the anode electrode 160.

At this time, although not shown, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer may be formed in a stacked structure in this order. However, one or more layers of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be omitted. The light emitting unit 1120 may be changed in various forms known in the art in addition to the combination of the above layers.

3A and 3B are cross-sectional views illustrating a method of forming the organic light emitting layer 330 in the organic light emitting display device according to the first embodiment of the present invention.

3A, the organic light emitting display device according to the first exemplary embodiment of the present invention may form the organic emission layer 330 through a transfer method using a laser beam.

First, an intermediate substrate 300 including an absorption layer 320 and an organic material layer 330a sequentially formed on the first base substrate 310 is prepared.

Next, the intermediate substrate 300 is positioned on the bank layer 170.

The intermediate substrate 300 may include a first base substrate 310 facing the mask 400, and an absorption layer 320 interposed between the first base substrate 310 and the organic material layer 330a may be used. have.

At this time, the organic material layer 330a and the absorption layer 320 may be positioned to correspond to the size of the first base substrate 310, but may be positioned narrower than this.

When forming the absorbing layer 320 and the organic material layer 330a on the first base substrate 310, a sputtering method may be used, but is not limited thereto. At this time, the absorption layer 320 formed on the first base substrate 310 may be a metal material having excellent transparency to the laser.

The organic material layer 330a is formed of the same color organic material. For example, it is possible to transfer an organic material having one of red, green, and blue colors to each sub-pixel.

Next, a mask 400 is positioned on the intermediate substrate 300.

The mask 400 may include a second base substrate 410 and a metal layer 420 positioned on the second base substrate 410. Here, the metal layer 420 may be formed to be spaced apart from each other on the second base substrate 410 to have an opening exposing the anode electrode 160. The metal layer 420 having an opening may use a material that may have non-permeability and non-absorption properties to a laser. For this reason, when a laser is irradiated, other parts except for the area exposed through the opening are blocked or reflected by the metal layer 420.

In this case, although not shown, a multi-layer in which a dielectric material, for example, titanium (TiO 2) or silica (SiO 2) is stacked, may be used instead of the metal layer 420.

Next, an organic light emitting layer 330 is formed by irradiating a laser to the intermediate substrate 300 through the mask 400.

Specifically, the organic layer 330a is attached to the anode electrode 160 by volume expansion of the absorbing layer 320 by a laser, thereby forming an organic emission layer 330 on the anode electrode 160.

At this time, as can be seen in Figure 3b, the organic light emitting display device according to the first embodiment of the present invention is formed with a bank layer 170 having a first hole (H1) in which a center hole is formed.

The first groove H1 is formed deeper than the anode electrode 16, so that the organic layer 330a is provided in the first groove H1 even when the absorbing layer 320 is bulk-expanded by a laser. It is not formed.

That is, the present invention forms the bank layer 170 including the first groove H1 that is deeper than the anode electrode 160, so that the organic material layer 330a is also formed in the emission area PA of the adjacent pixel that should not be transferred. ) Can improve the problem that can be transferred

In addition, scattering of the organic material layer 330a, which may occur in the process of detaching the intermediate substrate 300 that has been in contact with the bank layer 170 formed on the substrate 100, falls to the first groove H1. , It is possible to improve the problem of the occurrence of foreign matter defects due to this.

In the following, repeated descriptions of repeated parts in materials, structures, and the like of each component will be omitted.

4 is a schematic cross-sectional view of an organic light emitting device according to a second embodiment of the present invention, except for further including a thickness compensation layer 200 between the thin film transistor (TFT) and the protective layer 150 It is the same as the organic light emitting display device according to FIG. 2. Therefore, the same reference numerals are assigned to the same components, and repeated descriptions of the same components will be omitted.

As can be seen in Figure 4, the organic light emitting display device according to the second embodiment of the present invention is a substrate 100, a thin film transistor (TFT) formed on the substrate 100, a thickness compensation layer 200, a protective film 150 ), An anode electrode 160, a bank layer 170, and an organic emission layer 330.

The thickness compensation layer 200 is patterned between the thin film transistor (TFT) and the passivation layer 150.

The thickness compensation layer 200 includes a third groove H3 in which a region overlapping the second groove H2 is opened in the non-emission region OA.

That is, the third groove H3 included in the thickness compensation layer 200 and the second groove H2 included in the passivation layer 150 are formed in an overlapped region, and the bank layer 170 is the first groove. The first groove H1 may be provided by the second groove H2 and the third groove H3.

At this time, the first groove H1 is formed deeper than the anode electrode 160.

Therefore, the organic light emitting display device according to the second embodiment of the present invention is formed by forming the bank layer 170 including the first groove H1 deeper than the anode electrode 160, so that it is not transferred. The problem that the organic material layer 330a may be transferred to the emission area PA of the pixel may be improved.

In addition, scattering of the organic material layer 330a, which may occur in the process of detaching the intermediate substrate 300 that has been in contact with the bank layer 170 formed on the substrate 100, falls to the first groove H1. , It is possible to improve the problem of the occurrence of foreign matter defects due to this.

5 is a schematic cross-sectional view of an organic light emitting device according to a third embodiment of the present invention, except for further including a thickness compensation layer 200 between the protective layer 150 and the anode electrode 160, It is the same as the organic light emitting display device according to FIG. 2. Therefore, the same reference numerals are assigned to the same components, and repeated descriptions of the same components will be omitted.

As can be seen in Figure 5, the organic light emitting display device according to the third embodiment of the present invention is a substrate 100, a thin film transistor (TFT) formed on the substrate 100, a protective film 150, a thickness compensation layer 200 ), An anode electrode 160, a bank layer 170, and an organic emission layer 330.

The protective layer 150 included in the organic light emitting display device according to the third embodiment of the present invention does not have a hole unlike the first or second embodiment.

However, since the thickness compensation layer 200 is formed between the protective layer 150 and the anode electrode 160, the bank layer 170 may include a first groove H1.

More specifically, the thickness compensation layer 200 includes a second groove H2 opening in the non-emission area OA.

The anode electrode 160 is formed in the emission area PA on the thickness compensation layer 200, and the bank layer 170 is formed in the non-emission area OA on the thickness compensation layer 200.

The bank layer 170 has a first groove H1 in an area overlapping the second groove H2, and the first groove H1 is formed deeper than the anode electrode 160. .

For this reason, the organic light emitting display device according to the third embodiment of the present invention is formed by forming a bank layer 170 including a first groove H1 deeper than the anode electrode 160, so that it is not transferred. The problem that the organic material layer 330a may be transferred to the emission area PA of the pixel may be improved.

In addition, scattering of the organic material layer 330a, which may occur in the process of detaching the intermediate substrate 300 that has been in contact with the bank layer 170 formed on the substrate 100, falls to the first groove H1. , It is possible to improve the problem of the occurrence of foreign matter defects due to this.

6A to 6E are schematic manufacturing process diagrams showing a manufacturing process of the organic light emitting display device according to the first embodiment of the present invention, which relates to the manufacturing process diagram of the organic light emitting display device according to FIG. 2 described above.

6A, a thin film transistor TFT is formed in the light emitting area PA on the substrate 100.

The thin film transistor TFT may include a gate electrode 110 sequentially stacked on the substrate 100, a gate insulating layer 120, an active layer 130, a source electrode 140a, and a drain electrode 140b. have.

Although not shown in the drawing, the process of forming one thin film is as follows. After a thin film is deposited on an arbitrary layer and a photosensitive film is applied thereon, the photosensitive film is selectively removed through an exposure process and a development process using a mask to form a photosensitive film pattern. And only one thin film is formed through an etching process using the photosensitive film pattern as a blocking film.

In the method of manufacturing the thin film transistor (TFT), a layer is manufactured through such thin film deposition, photosensitive film coating, exposure, development, and etching processes.

Next, as can be seen in FIG. 6B, the protective film 150 is patterned through a single mask process using a diffraction mask or a halftone mask 950.

Specifically, a protective film material 150a is stacked on the substrate 100 on which a thin film transistor (TFT) is formed, and after placing a diffraction or halftone mask 950 on the protective film material 150a, light is irradiated. .

The diffraction or halftone mask 950 includes a transmission portion 950c, a semi-transmission portion 950b, and a blocking portion 950a. The transmissive portion 950c is a portion that transmits light, the semi-transmissive portion 950b is a portion that transmits only a portion of light, and the blocking portion 950a is a portion that blocks transmission of light.

Thereafter, the protective film material 150a irradiated with light is developed to form a protective film 150 in a pattern. The protective film material 150a corresponding to the transmissive part 950c is all removed by a developing process, and the protective film material 150a corresponding to the semi-transmissive part 950b is partially removed by a developing process, and the blocking part 950a The protective film material 150a corresponding to) remains without being removed by the developing process. Accordingly, a protective layer 150 having a region where a pattern is not formed, a region where a pattern is formed at a relatively low depth, and a region where a pattern is formed at a relatively high depth is completed.

Here, the region where the pattern is formed at a relatively low depth is the second groove H2, and the region where the pattern is formed at a relatively high depth is the contact hole CH.

Next, as can be seen in FIG. 6C, the bank layer 170 is patterned on the non-emission area OA on the substrate 100.

The bank layer 170 may be formed by providing a first groove H1 in an area overlapping the second groove H2.

Next, referring to FIG. 6D, as described above, the intermediate substrate 300 through the mask 400 including the second base substrate 410 for the laser and the metal layer 420 including the transmissive region and the non-transmissive region ) Is irradiated with a laser to transfer the organic material layer 330a on the anode electrode 160 to form the organic emission layer 330.

In this case, the intermediate substrate 300 includes a first base substrate 310 facing the mask 400, and the absorption layer 320 is interposed between the first base substrate 310 and the organic material layer 330a. Can be used.

As shown in FIG. 6E, the bank layer 170 has a first groove H1 in the middle, and the organic emission layer 330 is formed in the first groove H1 and adjacent light emitting areas PA. It may not be.

7A to 7F are schematic manufacturing process diagrams showing the manufacturing process of the organic light emitting display device according to the second embodiment of the present invention, which relates to the manufacturing process of the organic light emitting display device according to FIG. 4 described above.

The manufacturing process according to FIGS. 7A to 7F is the same as the manufacturing process according to FIGS. 6A to 6E, except that the thickness compensation layer 200 is further included between the thin film transistor (TFT) and the protective layer 150. Hereinafter, repeated description of the same manufacturing process will be omitted.

Since the process of FIG. 7A is the same as the process of FIG. 6A described above, a detailed description will be omitted.

As can be seen in FIG. 7B, a thickness compensation layer 200 is patterned on the light emitting area PA between the thin film transistor TFT and the passivation layer 150.

At this time, a pattern is formed so as to include a third groove H3 opening in the non-emission area OA on the substrate 100.

Next, as can be seen in Figure 7c, a protective film material is deposited on the substrate 100. At this time, a second groove H2 is formed in an area overlapping the third groove H3.

Next, a contact hole CH exposing the drain electrode 140b is patterned through a mask process.

Next, as can be seen in FIG. 7D, an anode electrode 160 is patterned on the light-emitting area PA on the passivation layer 150.

Next, a bank layer 170 is patterned on the non-emission region OA on the passivation layer 150. The bank layer 170 may include a first groove H1 by the second groove H2 and the third groove H3. That is, the first groove H1, the second groove H2, and the third groove H3 are formed in the overlapping region.

Next, since the processes of FIGS. 7E and 7F are the same as those of FIGS. 6D and 6E, detailed descriptions thereof will be omitted.

8A to 8F are schematic manufacturing process diagrams showing a manufacturing process of the organic light emitting display device according to the third embodiment of the present invention, which relates to the manufacturing process of the organic light emitting display device according to FIG. 5 described above.

The manufacturing process according to FIGS. 8A to 8F is the same as the manufacturing process according to FIGS. 6A to 6E, except that the thickness compensation layer 200 is further included between the protective layer 150 and the anode electrode 160. Hereinafter, repeated description of the same manufacturing process will be omitted.

Since the process of FIG. 8A is the same as the process of FIG. 6A described above, a detailed description will be omitted.

8B, a protective film 150 is patterned on the substrate 100.

In this case, the passivation layer 150 is formed to include a contact hole CH exposing the drain electrode 140b.

Next, as can be seen in FIG. 8C, a contact hole CH exposing the drain electrode 140b on the passivation layer 150 and a second groove H2 opening in the non-emission area OA are provided. The thickness compensation layer 200 is patterned.

In addition to this process, although not illustrated, after the protective film material and the thickness compensation layer material are sequentially stacked, a contact hole CH and a non-light emitting area OA exposing the drain electrode 140b using a halftone mask The thickness compensation layer 200 having the second groove H2 that is open at may be formed using a single mask.

Next, as can be seen in FIG. 8D, an anode electrode 160 is patterned on the light-emitting area PA on the thickness compensation layer 200.

Next, a bank layer 170 having a first groove H1 is patterned in the non-emission area OA on the substrate 100.

In this case, while the first groove H1 is formed in an area overlapping the second groove H2, the depth of the first groove H1 may be formed below the anode electrode 160.

Next, since the processes of FIGS. 8E and 8F are the same as those of FIGS. 6D and 6E, detailed descriptions thereof will be omitted.

Those skilled in the art to which the present invention pertains will understand that the above-described present invention can be implemented in other specific forms without changing its technical spirit or essential features.

For example, in all of the above-described embodiments, the thin film transistor TFT is described as a staggered type in which the gate electrode 110 and the source and drain electrodes 140a and 140b are positioned between the active layer 130. However, in the modified embodiment, the gate electrode 110 and the source and drain electrodes 140a and 140b may be formed in a coplanar type with one side of the active layer 130.

Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The scope of the present invention is indicated by the following claims rather than the above detailed description, and it should be interpreted that all changes or modifications derived from the meaning and scope of the claims and equivalent concepts are included in the scope of the present invention. do.

100: substrate TFT: thin film transistor
110: gate electrode 120: gate insulating film
130: active layer 140a: source electrode
140b: drain electrode 150: protective film
CH: Contact hole H2: Second groove
160: anode electrode 170: bank layer
H1: first groove 330: organic light emitting layer

Claims (10)

A substrate having a light emitting region and a non-light emitting region forming a peripheral portion of the light emitting region;
A thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode in a light emitting region on the substrate;
A protective film formed with a contact hole exposing the drain electrode on the front surface of the substrate including the thin film transistor;
An anode electrode formed to be connected to the drain electrode through the contact hole in the light emitting region on the substrate; And
And a bank layer formed in the non-emission region on the substrate,
The bank layer is provided with a first hole in which a middle hole is formed, and further includes a thickness compensation layer between the thin film transistor and the protective layer, and the thickness compensation layer is disposed to overlap the light emitting region,
The thickness compensation layer has an organic light emitting display device, characterized in that it has a third groove in which an area overlapping the first groove is opened. According to claim 1,
The protective layer includes a second groove in which a hole is formed in an area overlapping the bank layer,
The first groove is an organic light emitting display device characterized in that it is formed deeper than the anode electrode. delete A substrate having a light emitting region and a non-light emitting region forming a peripheral portion of the light emitting region;
A thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode in a light emitting region on the substrate;
A protective film formed with a contact hole exposing the drain electrode on the front surface of the substrate including the thin film transistor;
An anode electrode formed to be connected to the drain electrode through the contact hole in the light emitting region on the substrate; And
And a bank layer formed in the non-emission region on the substrate,
The bank layer is provided with a first groove having a middle hole,
Further comprising a thickness compensation layer between the protective film and the anode electrode,
The thickness compensation layer is disposed to overlap the light emitting region,
The thickness compensation layer has an organic light emitting display device, characterized in that it has a second groove in which an area overlapping the first groove is opened. delete delete Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a light emitting region and a non-light emitting region forming a peripheral portion of the light emitting region are defined;
Forming a thickness compensation layer including a third groove in which the non-emission region is opened while being formed on the entire surface of the substrate including the thin film transistor;
Forming a protective film including a second groove having a hole formed in the non-emission region on the thickness compensation layer;
Forming an anode electrode in the light emitting region on the protective film;
Forming a bank layer in the non-emission region on the substrate; And
And forming an organic emission layer on the anode electrode,
The bank layer includes a first groove formed deeper than the anode electrode in the middle. The method of claim 7,
The first groove, the second groove, and the third groove is a method of manufacturing an organic light emitting display device, characterized in that formed in the overlapping region. Forming a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a substrate on which a light emitting region and a non-light emitting region forming a peripheral portion of the light emitting region are defined;
Forming a protective film having a contact hole exposing the drain electrode on a front surface of the substrate including the thin film transistor;
Forming a thickness compensation layer including a contact hole exposing the drain electrode while being formed on the protective layer, and a second groove in which the non-emission region is open;
Forming an anode electrode connected to the drain electrode through the contact hole on the thickness compensation layer;
Forming a bank layer in the non-emission region on the substrate; And
And forming an organic emission layer on the anode electrode,
The bank layer includes a first groove formed deeper than the anode electrode in the middle. The method of claim 9,
The first groove and the second groove is a method of manufacturing an organic light emitting display device, characterized in that formed in the overlapping region.

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