KR20140129375A - n-TYPE DIFFUSION LAYER-FORMING COMPOSITION, n-TYPE DIFFUSION LAYER PRODUCTION METHOD AND SOLAR CELL COMPONENT PRODUCTION METHOD - Google Patents
n-TYPE DIFFUSION LAYER-FORMING COMPOSITION, n-TYPE DIFFUSION LAYER PRODUCTION METHOD AND SOLAR CELL COMPONENT PRODUCTION METHOD Download PDFInfo
- Publication number
- KR20140129375A KR20140129375A KR1020147028552A KR20147028552A KR20140129375A KR 20140129375 A KR20140129375 A KR 20140129375A KR 1020147028552 A KR1020147028552 A KR 1020147028552A KR 20147028552 A KR20147028552 A KR 20147028552A KR 20140129375 A KR20140129375 A KR 20140129375A
- Authority
- KR
- South Korea
- Prior art keywords
- diffusion layer
- type diffusion
- forming composition
- glass powder
- donor element
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 217
- 239000010410 layer Substances 0.000 title claims abstract description 145
- 239000011254 layer-forming composition Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 210000003850 cellular structure Anatomy 0.000 title 1
- 239000011521 glass Substances 0.000 claims abstract description 107
- 239000000843 powder Substances 0.000 claims abstract description 70
- 239000000126 substance Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 27
- 229910052698 phosphorus Inorganic materials 0.000 claims description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- 239000011574 phosphorus Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 239000002612 dispersion medium Substances 0.000 abstract description 7
- 239000004615 ingredient Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 239000000203 mixture Substances 0.000 description 24
- 239000002245 particle Substances 0.000 description 23
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 239000012798 spherical particle Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 7
- -1 polyvinylamides Polymers 0.000 description 7
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 229910052795 boron group element Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- 229910019142 PO4 Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000010574 gas phase reaction Methods 0.000 description 4
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 235000021317 phosphate Nutrition 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- ZIKLJUUTSQYGQI-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OCC ZIKLJUUTSQYGQI-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 3
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004455 differential thermal analysis Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 235000019837 monoammonium phosphate Nutrition 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 235000011121 sodium hydroxide Nutrition 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- LAVARTIQQDZFNT-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-yl acetate Chemical compound COCC(C)OCC(C)OC(C)=O LAVARTIQQDZFNT-UHFFFAOYSA-N 0.000 description 2
- KZVBBTZJMSWGTK-UHFFFAOYSA-N 1-[2-(2-butoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOCCCC KZVBBTZJMSWGTK-UHFFFAOYSA-N 0.000 description 2
- UOWSVNMPHMJCBZ-UHFFFAOYSA-N 1-[2-(2-butoxypropoxy)propoxy]butane Chemical compound CCCCOCC(C)OCC(C)OCCCC UOWSVNMPHMJCBZ-UHFFFAOYSA-N 0.000 description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 2
- ORRRIJVZQZKAKQ-UHFFFAOYSA-N 1-ethoxy-2-[2-(2-ethoxypropoxy)propoxy]propane Chemical compound CCOCC(C)OCC(C)OCC(C)OCC ORRRIJVZQZKAKQ-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- CKCGJBFTCUCBAJ-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propyl acetate Chemical compound CCOC(C)COC(C)COC(C)=O CKCGJBFTCUCBAJ-UHFFFAOYSA-N 0.000 description 2
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 2
- FEBUJFMRSBAMES-UHFFFAOYSA-N 2-[(2-{[3,5-dihydroxy-2-(hydroxymethyl)-6-phosphanyloxan-4-yl]oxy}-3,5-dihydroxy-6-({[3,4,5-trihydroxy-6-(hydroxymethyl)oxan-2-yl]oxy}methyl)oxan-4-yl)oxy]-3,5-dihydroxy-6-(hydroxymethyl)oxan-4-yl phosphinite Chemical class OC1C(O)C(O)C(CO)OC1OCC1C(O)C(OC2C(C(OP)C(O)C(CO)O2)O)C(O)C(OC2C(C(CO)OC(P)C2O)O)O1 FEBUJFMRSBAMES-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 241000416162 Astragalus gummifer Species 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 244000007835 Cyamopsis tetragonoloba Species 0.000 description 2
- 239000004375 Dextrin Substances 0.000 description 2
- 229920001353 Dextrin Polymers 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- 229920001615 Tragacanth Chemical class 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- UAHWPYUMFXYFJY-UHFFFAOYSA-N beta-myrcene Chemical compound CC(C)=CCCC(=C)C=C UAHWPYUMFXYFJY-UHFFFAOYSA-N 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N caprylic alcohol Natural products CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 235000019425 dextrin Nutrition 0.000 description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- GJRQTCIYDGXPES-UHFFFAOYSA-N isobutyl acetate Chemical compound CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- GJQIMXVRFNLMTB-UHFFFAOYSA-N nonyl acetate Chemical compound CCCCCCCCCOC(C)=O GJQIMXVRFNLMTB-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- 239000000196 tragacanth Chemical class 0.000 description 2
- 235000010487 tragacanth Nutrition 0.000 description 2
- 229940116362 tragacanth Drugs 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 1
- PVMMVWNXKOSPRB-UHFFFAOYSA-N 1,2-dipropoxypropane Chemical compound CCCOCC(C)OCCC PVMMVWNXKOSPRB-UHFFFAOYSA-N 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 description 1
- QMGJMGFZLXYHCR-UHFFFAOYSA-N 1-(2-butoxypropoxy)butane Chemical compound CCCCOCC(C)OCCCC QMGJMGFZLXYHCR-UHFFFAOYSA-N 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- JRRDISHSXWGFRF-UHFFFAOYSA-N 1-[2-(2-ethoxyethoxy)ethoxy]-2-methoxyethane Chemical compound CCOCCOCCOCCOC JRRDISHSXWGFRF-UHFFFAOYSA-N 0.000 description 1
- MBRRDORCFVPYMA-UHFFFAOYSA-N 1-[2-(2-methoxyethoxy)ethoxy]propane Chemical compound CCCOCCOCCOC MBRRDORCFVPYMA-UHFFFAOYSA-N 0.000 description 1
- QPHFJZRSMXHTAW-UHFFFAOYSA-N 1-[2-(2-methoxypropoxy)propoxy]butane Chemical compound CCCCOCC(C)OCC(C)OC QPHFJZRSMXHTAW-UHFFFAOYSA-N 0.000 description 1
- QKFNXFNHRDUNKF-UHFFFAOYSA-N 1-[2-(2-methoxypropoxy)propoxy]hexane Chemical compound CCCCCCOCC(C)OCC(C)OC QKFNXFNHRDUNKF-UHFFFAOYSA-N 0.000 description 1
- BOGFHOWTVGAYFK-UHFFFAOYSA-N 1-[2-(2-propoxyethoxy)ethoxy]propane Chemical compound CCCOCCOCCOCCC BOGFHOWTVGAYFK-UHFFFAOYSA-N 0.000 description 1
- KTSVVTQTKRGWGU-UHFFFAOYSA-N 1-[2-[2-(2-butoxyethoxy)ethoxy]ethoxy]butane Chemical compound CCCCOCCOCCOCCOCCCC KTSVVTQTKRGWGU-UHFFFAOYSA-N 0.000 description 1
- YZWVMKLQNYGKLJ-UHFFFAOYSA-N 1-[2-[2-(2-ethoxyethoxy)ethoxy]ethoxy]-2-methoxyethane Chemical compound CCOCCOCCOCCOCCOC YZWVMKLQNYGKLJ-UHFFFAOYSA-N 0.000 description 1
- SNAQINZKMQFYFV-UHFFFAOYSA-N 1-[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]butane Chemical compound CCCCOCCOCCOCCOC SNAQINZKMQFYFV-UHFFFAOYSA-N 0.000 description 1
- WECDVJWNQLMVAZ-UHFFFAOYSA-N 1-[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]hexane Chemical compound CCCCCCOCCOCCOCCOC WECDVJWNQLMVAZ-UHFFFAOYSA-N 0.000 description 1
- JVMKCHOJVQIXQN-UHFFFAOYSA-N 1-[2-[2-[2-(2-butoxypropoxy)propoxy]propoxy]propoxy]butane Chemical compound CCCCOCC(C)OCC(C)OCC(C)OCC(C)OCCCC JVMKCHOJVQIXQN-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- BNXZHVUCNYMNOS-UHFFFAOYSA-N 1-butylpyrrolidin-2-one Chemical compound CCCCN1CCCC1=O BNXZHVUCNYMNOS-UHFFFAOYSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- JXFITNNCZLPZNX-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OC JXFITNNCZLPZNX-UHFFFAOYSA-N 0.000 description 1
- KIAMPLQEZAMORJ-UHFFFAOYSA-N 1-ethoxy-2-[2-(2-ethoxyethoxy)ethoxy]ethane Chemical compound CCOCCOCCOCCOCC KIAMPLQEZAMORJ-UHFFFAOYSA-N 0.000 description 1
- SFXVPXODAPMPMQ-UHFFFAOYSA-N 1-ethoxy-2-[2-(2-methoxypropoxy)propoxy]propane Chemical compound CCOCC(C)OCC(C)OCC(C)OC SFXVPXODAPMPMQ-UHFFFAOYSA-N 0.000 description 1
- FXAFMVDJGZBDEP-UHFFFAOYSA-N 1-ethoxy-2-[2-[2-(2-ethoxypropoxy)propoxy]propoxy]propane Chemical compound CCOCC(C)OCC(C)OCC(C)OCC(C)OCC FXAFMVDJGZBDEP-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- BAWUFGWWCWMUNU-UHFFFAOYSA-N 1-hexylpyrrolidin-2-one Chemical compound CCCCCCN1CCCC1=O BAWUFGWWCWMUNU-UHFFFAOYSA-N 0.000 description 1
- ROSYHLFNMZTEKZ-UHFFFAOYSA-N 1-methoxy-2-[2-[2-(2-methoxypropoxy)propoxy]propoxy]propane Chemical compound COCC(C)OCC(C)OCC(C)OCC(C)OC ROSYHLFNMZTEKZ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 description 1
- JOERQAIRIDZWHX-UHFFFAOYSA-N 1-propoxy-2-(2-propoxypropoxy)propane Chemical compound CCCOCC(C)OCC(C)OCCC JOERQAIRIDZWHX-UHFFFAOYSA-N 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 description 1
- KKQVUWHSUOGDEI-UHFFFAOYSA-N 2-(2-butan-2-yloxyethoxy)ethanol Chemical compound CCC(C)OCCOCCO KKQVUWHSUOGDEI-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- GHGDAJBKEFQCBH-UHFFFAOYSA-N 2-(2-heptan-2-yloxyethoxy)ethanol Chemical compound CCCCCC(C)OCCOCCO GHGDAJBKEFQCBH-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- GQKZRWSUJHVIPE-UHFFFAOYSA-N 2-Pentanol acetate Chemical compound CCCC(C)OC(C)=O GQKZRWSUJHVIPE-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- SDHQGBWMLCBNSM-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]ethyl acetate Chemical compound COCCOCCOCCOC(C)=O SDHQGBWMLCBNSM-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- JHOOWURXQGAXHL-UHFFFAOYSA-N 2-[2-(2-propan-2-yloxyethoxy)ethoxy]propane Chemical compound CC(C)OCCOCCOC(C)C JHOOWURXQGAXHL-UHFFFAOYSA-N 0.000 description 1
- JBDQVFGGGVTGDI-UHFFFAOYSA-N 2-[2-(2-propan-2-yloxypropoxy)propoxy]propan-1-ol Chemical compound CC(C)OC(C)COC(C)COC(C)CO JBDQVFGGGVTGDI-UHFFFAOYSA-N 0.000 description 1
- MXVMODFDROLTFD-UHFFFAOYSA-N 2-[2-[2-(2-butoxyethoxy)ethoxy]ethoxy]ethanol Chemical compound CCCCOCCOCCOCCOCCO MXVMODFDROLTFD-UHFFFAOYSA-N 0.000 description 1
- LKAIVSMFSUHTGS-UHFFFAOYSA-N 2-[2-[2-(2-heptan-2-yloxyethoxy)ethoxy]ethoxy]ethanol Chemical compound CCCCCC(C)OCCOCCOCCOCCO LKAIVSMFSUHTGS-UHFFFAOYSA-N 0.000 description 1
- SHHZIUZGAHMEJB-UHFFFAOYSA-N 2-[2-[2-(2-heptan-2-yloxypropoxy)propoxy]propoxy]propan-1-ol Chemical compound CC(CCCCC)OC(C)COC(C)COC(C)COC(C)CO SHHZIUZGAHMEJB-UHFFFAOYSA-N 0.000 description 1
- JPKNIKSLAPWTRU-UHFFFAOYSA-N 2-[2-[2-(2-pentan-2-yloxyethoxy)ethoxy]ethoxy]ethanol Chemical compound CCCC(C)OCCOCCOCCOCCO JPKNIKSLAPWTRU-UHFFFAOYSA-N 0.000 description 1
- HSDVPOIMGHIBHF-UHFFFAOYSA-N 2-[2-[2-(2-pentan-2-yloxypropoxy)propoxy]propoxy]propan-1-ol Chemical compound CC(CCC)OC(C)COC(C)COC(C)COC(C)CO HSDVPOIMGHIBHF-UHFFFAOYSA-N 0.000 description 1
- LYQNWNGQJGJOQH-UHFFFAOYSA-N 2-[2-[2-(2-propan-2-yloxypropoxy)propoxy]propoxy]propan-1-ol Chemical compound CC(C)OC(C)COC(C)COC(C)COC(C)CO LYQNWNGQJGJOQH-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- BYVKCQBOHJQWIO-UHFFFAOYSA-N 2-ethoxyethyl propanoate Chemical compound CCOCCOC(=O)CC BYVKCQBOHJQWIO-UHFFFAOYSA-N 0.000 description 1
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 1
- VAHNPAMCADTGIO-UHFFFAOYSA-N 2-methoxyethyl propanoate Chemical compound CCC(=O)OCCOC VAHNPAMCADTGIO-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- PKNKULBDCRZSBT-UHFFFAOYSA-N 3,4,5-trimethylnonan-2-one Chemical compound CCCCC(C)C(C)C(C)C(C)=O PKNKULBDCRZSBT-UHFFFAOYSA-N 0.000 description 1
- HYDWALOBQJFOMS-UHFFFAOYSA-N 3,6,9,12,15-pentaoxaheptadecane Chemical compound CCOCCOCCOCCOCCOCC HYDWALOBQJFOMS-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 1
- MQWCXKGKQLNYQG-UHFFFAOYSA-N 4-methylcyclohexan-1-ol Chemical compound CC1CCC(O)CC1 MQWCXKGKQLNYQG-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- GJCOSYZMQJWQCA-UHFFFAOYSA-N 9H-xanthene Chemical compound C1=CC=C2CC3=CC=CC=C3OC2=C1 GJCOSYZMQJWQCA-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- ICVSPIAGSUNSNN-UHFFFAOYSA-N C(C)(=O)OC(C(CC)OCC)C.C(COCCO)O Chemical compound C(C)(=O)OC(C(CC)OCC)C.C(COCCO)O ICVSPIAGSUNSNN-UHFFFAOYSA-N 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- YYLLIJHXUHJATK-UHFFFAOYSA-N Cyclohexyl acetate Chemical compound CC(=O)OC1CCCCC1 YYLLIJHXUHJATK-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- 229920000881 Modified starch Polymers 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- JKRZOJADNVOXPM-UHFFFAOYSA-N Oxalic acid dibutyl ester Chemical compound CCCCOC(=O)C(=O)OCCCC JKRZOJADNVOXPM-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- 229920002305 Schizophyllan Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229940022663 acetate Drugs 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-N acetoacetic acid Chemical compound CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- VYBREYKSZAROCT-UHFFFAOYSA-N alpha-myrcene Natural products CC(=C)CCCC(=C)C=C VYBREYKSZAROCT-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- BTMVHUNTONAYDX-UHFFFAOYSA-N butyl propionate Chemical compound CCCCOC(=O)CC BTMVHUNTONAYDX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 229920003086 cellulose ether Polymers 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229960004132 diethyl ether Drugs 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- FDPIMTJIUBPUKL-UHFFFAOYSA-N dimethylacetone Natural products CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- NZDGNIJHHWDSIW-UHFFFAOYSA-N ethyl acetate;methyl acetate Chemical compound COC(C)=O.CCOC(C)=O NZDGNIJHHWDSIW-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical group CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- IMXBRVLCKXGWSS-UHFFFAOYSA-N methyl 2-cyclohexylacetate Chemical compound COC(=O)CC1CCCCC1 IMXBRVLCKXGWSS-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 235000019426 modified starch Nutrition 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 1
- 150000007823 ocimene derivatives Chemical class 0.000 description 1
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- GXOHBWLPQHTYPF-UHFFFAOYSA-N pentyl 2-hydroxypropanoate Chemical compound CCCCCOC(=O)C(C)O GXOHBWLPQHTYPF-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 235000010413 sodium alginate Nutrition 0.000 description 1
- 239000000661 sodium alginate Substances 0.000 description 1
- 229940005550 sodium alginate Drugs 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- BRGJIIMZXMWMCC-UHFFFAOYSA-N tetradecan-2-ol Chemical compound CCCCCCCCCCCCC(C)O BRGJIIMZXMWMCC-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XJPBRODHZKDRCB-UHFFFAOYSA-N trans-alpha-ocimene Natural products CC(=C)CCC=C(C)C=C XJPBRODHZKDRCB-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- XMUJIPOFTAHSOK-UHFFFAOYSA-N undecan-2-ol Chemical compound CCCCCCCCCC(C)O XMUJIPOFTAHSOK-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 229920001285 xanthan gum Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Photovoltaic Devices (AREA)
- Glass Compositions (AREA)
Abstract
n 형 확산층 형성 조성물은 도너 원소를 함유하는 유리 분말과 분산매를 함유한다. 상기 유리 분말은 도너 원소 함유 물질과 유리 성분 물질을 함유한다. 상기 유리 분말 중의 상기 도너 원소 함유 물질의 함유 비율은 1 질량% 이상 80 질량% 이하이다. 이 n 형 확산층 형성 조성물을 도포하여 열확산 처리를 실시함으로써, n 형 확산층, 및 n 형 확산층을 갖는 태양 전지 소자가 제조된다.The n-type diffusion layer-forming composition contains a donor element-containing glass powder and a dispersion medium. The glass powder contains a donor element-containing substance and a glass ingredient substance. The content of the donor element-containing substance in the glass powder is 1% by mass or more and 80% by mass or less. By applying this n-type diffusion layer forming composition and performing thermal diffusion treatment, a solar cell element having an n-type diffusion layer and an n-type diffusion layer is produced.
Description
본 발명은, 태양 전지 소자의 n 형 확산층 형성 조성물, n 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법에 관한 것으로, 더욱 상세하게는, 반도체 기판인 실리콘 기판의 특정 부분에 n 형 확산층을 형성하는 것을 가능하게 하는 기술에 관한 것이다.The present invention relates to an n-type diffusion layer forming composition for a solar cell element, a method of manufacturing an n-type diffusion layer, and a method of manufacturing a solar cell element. More particularly, To a process for producing the same.
종래의 실리콘 태양 전지 소자의 제조 공정에 대해 설명한다.A manufacturing process of a conventional silicon solar cell will be described.
먼저, 광 가둠 효과를 촉진하여 고효율화를 도모하도록 텍스처 구조를 형성한 p 형 실리콘 기판을 준비하고, 계속해서 옥시염화인 (POCl3), 질소, 산소의 혼합 가스 분위기에 있어서 800 ∼ 900 ℃ 에서 수 십분의 처리를 실시하여 고르게 n 형 확산층을 형성한다. 이 종래의 방법에서는 혼합 가스를 사용하여 인의 확산을 실시하기 때문에, 표면뿐만 아니라, 측면, 이면에도 n 형 확산층이 형성된다. 그 때문에, 측면의 n 형 확산층을 제거하기 위한 사이드 에칭 공정이 필요하였다. 또, 이면의 n 형 확산층은 p+ 형 확산층으로 변환할 필요가 있어, 이면의 n 형 확산층 상에 알루미늄 페이스트를 부여하여, 알루미늄의 확산에 의해 n 형 확산층으로부터 p+ 형 확산층으로 변환시키고 있었다.First, a p-type silicon substrate having a textured structure is prepared so as to promote the light confinement effect so as to achieve high efficiency. Subsequently, a p-type silicon substrate is prepared in a mixed gas atmosphere of phosphorous oxychloride (POCl 3 ), nitrogen and oxygen at 800 to 900 ° C And an n-type diffusion layer is formed evenly. In this conventional method, diffusion of phosphorus is performed using a mixed gas, so that an n-type diffusion layer is formed not only on the surface but also on the side surface and the back surface. Therefore, a side etching process for removing the side n-type diffusion layer was required. In addition, the back n-type diffusion layer needs to be converted into a p + -type diffusion layer, and an aluminum paste is applied on the back n-type diffusion layer to convert it from the n-type diffusion layer to the p + -type diffusion layer by diffusion of aluminum.
한편으로, 반도체 제조 분야에서는, 예를 들어 일본 공개특허공보 2002-75894호에 개시되어 있는 바와 같이, 오산화인 (P2O5) 혹은 인산이수소암모늄 (NH4H2PO4) 등의 인산염을 함유하는 용액의 도포에 의해 n 형 확산층을 형성하는 방법이 제안되어 있다. 그러나, 이 방법에서는 용액을 사용하기 때문에, 상기 혼합 가스를 사용하는 기상 반응법과 마찬가지로 인의 확산이 측면 및 이면에도 미쳐, 표면뿐만 아니라, 측면, 이면에도 n 형 확산층이 형성된다.On the other hand, in the field of semiconductor manufacturing, for example, as disclosed in Japanese Patent Application Laid-Open No. 2002-75894, phosphates such as phosphorus pentoxide (P 2 O 5 ) or ammonium dihydrogen phosphate (NH 4 H 2 PO 4 ) There is proposed a method of forming an n-type diffusion layer by application of a solution containing a compound represented by formula However, since a solution is used in this method, the diffusion of phosphorus diffuses on the side surface and the back surface similarly to the vapor phase reaction method using the mixed gas, and an n-type diffusion layer is formed not only on the surface but also on the side surface and back surface.
상기 서술한 바와 같이, n 형 확산층 형성시에, 옥시염화인을 사용한 기상 반응에서는 본래 n 형 확산층이 필요한 한쪽 면 (통상적으로 수광면, 표면) 뿐만 아니라, 다른 일방의 면 (비수광면, 이면) 이나 측면에도 n 형 확산층이 형성되어 버린다. 또, 인산염을 함유하는 용액을 도포하여 열확산시키는 방법에서도 기상 반응법과 마찬가지로, 표면 이외에도 n 형 확산층이 형성되어 버린다. 그 때문에, 소자로서 pn 접합 구조를 갖기 위해서는, 측면에 있어서는 에칭을 실시하고, 이면에 있어서는 n 형 확산층을 p 형 확산층으로 변환해야 한다. 일반적으로는, 이면에 제 13 족 원소인 알루미늄의 페이스트를 도포, 소성하여, n 형 확산층을 p 형 확산층으로 변환하고 있다.As described above, in the gas phase reaction using phosphorus oxychloride at the time of forming the n-type diffusion layer, not only one surface (usually the light receiving surface and the surface) necessary for the n-type diffusion layer but the other surface (non- An n-type diffusion layer is also formed on the side surface or the side surface. Also, in a method of applying a solution containing a phosphate and performing thermal diffusion, an n-type diffusion layer is formed in addition to the surface in the same manner as in the gas phase reaction method. Therefore, in order to have a pn junction structure as an element, it is necessary to perform etching on the side surface and convert the n-type diffusion layer into the p-type diffusion layer on the back surface. In general, a paste of aluminum as a
본 발명은 이상의 종래의 문제점을 감안하여 이루어진 것으로, 실리콘 기판을 사용한 태양 전지 소자의 제조 공정에 있어서, 불필요한 n 형 확산층을 형성시키지 않고 특정 부분에 n 형 확산층을 형성하는 것이 가능하며, 또한 표면 저항값이 낮은 태양 전지 소자를 제조 가능한 n 형 확산층 형성 조성물, n 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법의 제공을 과제로 한다.The present invention has been made in view of the above-mentioned conventional problems, and it is an object of the present invention to provide a method of manufacturing a solar cell device using a silicon substrate, in which an n-type diffusion layer can be formed at a specific portion without forming an unnecessary n-type diffusion layer, An n-type diffusion layer-forming composition capable of producing a solar cell element having a low value, a method of manufacturing an n-type diffusion layer, and a method of manufacturing a solar cell element.
상기 과제를 해결하는 수단은 이하와 같다.Means for solving the above problems are as follows.
<1> 도너 원소를 함유하는 유리 분말과 분산매를 함유하고, 상기 유리 분말이 도너 원소 함유 물질과 유리 성분 물질을 함유하며, 상기 유리 분말 중의 상기 도너 원소 함유 물질의 함유 비율이 1 질량% 이상 80 질량% 이하인 n 형 확산층 형성 조성물.≪ 1 > A glass composition comprising a glass powder containing a donor element and a dispersion medium, wherein the glass powder contains a donor element-containing substance and a glass ingredient substance, the content of the donor element- By mass or less.
<2> 상기 도너 원소가 P (인) 및 Sb (안티몬) 에서 선택되는 적어도 1 종인 상기 <1> 에 기재된 n 형 확산층 형성 조성물.<2> The n-type diffusion layer-forming composition according to <1>, wherein the donor element is at least one selected from P (phosphorus) and Sb (antimony).
<3> 상기 도너 원소를 함유하는 유리 분말이 P2O3, P2O5 및 Sb2O3 에서 선택되는 적어도 1 종의 도너 원소 함유 물질과, SiO2, K2O, Na2O, Li2O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO2 및 MoO3 에서 선택되는 적어도 1 종의 유리 성분 물질을 함유하는 상기 <1> 또는 <2> 에 기재된 n 형 확산층 형성 조성물.<3> The method according to any one of <1> to <3>, wherein the glass powder containing the donor element is at least one donor element-containing material selected from P 2 O 3 , P 2 O 5 and Sb 2 O 3 and SiO 2 , K 2 O, Na 2 O, The glass composition according to any one of <1> or <2>, wherein the glass composition contains at least one glass component selected from Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2 and MoO 3 type diffusion layer forming composition.
<4> 또한, Ag (은), Si (규소), Cu (구리), Fe (철), Zn (아연) 및 Mn (망간) 에서 선택되는 적어도 1 종의 금속을 함유하는 상기 <1> ∼ <3> 중 어느 한 항에 기재된 n 형 확산층 형성 조성물.<4> The method for manufacturing a semiconductor device according to any one of <1> to <4>, wherein the metal material contains at least one metal selected from Ag (silver), Si (silicon), Cu (copper), Fe (iron), Zn (zinc) The n-type diffusion layer-forming composition according to any one of <3> to <3>.
<5> 상기 금속이 Ag (은) 인 상기 <4> 에 기재된 n 형 확산층 형성 조성물.≪ 5 > The n-type diffusion layer-forming composition according to < 4 >, wherein the metal is Ag (silver).
<6> 상기 <1> ∼ <5> 중 어느 한 항에 기재된 n 형 확산층 형성 조성물을 도포하는 공정과, 열확산 처리를 실시하는 공정을 갖는 n 형 확산층의 제조 방법.≪ 6 > A method for manufacturing an n-type diffusion layer having a step of applying the composition for forming an n-type diffusion layer described in any one of < 1 > to < 5 >
<7> 반도체 기판 상에 상기 <1> ∼ <5> 중 어느 한 항에 기재된 n 형 확산층 형성 조성물을 도포하는 공정과, 열확산 처리를 실시하여 n 형 확산층을 형성하는 공정과, 형성된 상기 n 형 확산층 상에 전극을 형성하는 공정을 갖는 태양 전지 소자의 제조 방법.<7> A method for manufacturing a semiconductor device, comprising the steps of: applying an n-type diffusion layer-forming composition according to any one of <1> to <5> on a semiconductor substrate; forming an n-type diffusion layer by performing a thermal diffusion process; And forming an electrode on the diffusion layer.
본 발명에 의하면, 실리콘 기판을 사용한 태양 전지 소자의 제조 공정에 있어서, 불필요한 n 형 확산층을 형성시키지 않고 특정 부분에 n 형 확산층을 형성하는 것이 가능해진다. 또, 본 발명의 도너 원소 함유 물질의 함유 비율의 범위로 함으로써, 표면 저항값이 저하되어, 태양 전지 소자로서의 성능의 향상이 가능해진다.According to the present invention, it is possible to form an n-type diffusion layer in a specific portion without forming an unnecessary n-type diffusion layer in a manufacturing process of a solar cell element using a silicon substrate. By setting the content ratio of the donor element-containing material of the present invention to within the range, the surface resistance value is lowered, and the performance as a solar cell element can be improved.
도 1 은 본 발명의 태양 전지 소자의 제조 공정의 일례를 개념적으로 나타내는 단면도이다.
도 2a 는 태양 전지 소자를 표면에서 본 평면도이다.
도 2b 는 도 2a 의 일부를 확대하여 나타내는 사시도이다.1 is a cross-sectional view conceptually showing an example of a manufacturing process of the solar cell element of the present invention.
2A is a plan view of the solar cell element as viewed from the surface.
2B is an enlarged perspective view of part of FIG. 2A.
먼저, 본 발명의 n 형 확산층 형성 조성물에 대해 설명하고, 다음으로 n 형 확산층 형성 조성물을 사용하는 n 형 확산층 및 태양 전지 소자의 제조 방법에 대해 설명한다.First, the n-type diffusion layer-forming composition of the present invention will be described. Next, an n-type diffusion layer using the n-type diffusion layer-forming composition and a manufacturing method of the solar cell element will be described.
또한, 본 명세서에 있어서 「공정」이라는 말은, 독립된 공정뿐만 아니라, 다른 공정과 명확하게 구별할 수 없는 경우라도 그 공정의 소기의 작용이 달성된다면, 본 용어에 포함된다. 또, 본 명세서에 있어서「∼」는, 그 전후에 기재되는 수치를 각각 최소치 및 최대치로서 포함하는 범위를 나타내는 것으로 한다. 또한, 본 명세서에 있어서 조성물 중의 각 성분의 양에 대해 언급하는 경우, 조성물 중에 각 성분에 해당하는 물질이 복수 존재하는 경우에는, 특별히 언급이 없는 이상 조성물 중에 존재하는 당해 복수의 물질의 합계량을 의미한다.In this specification, the term " process " is included in this term as long as the desired action of the process is achieved not only in the independent process but also in the case where it can not be clearly distinguished from other processes. In the present specification, " ~ " indicates a range including the numerical values described before and after each as a minimum value and a maximum value. In the present specification, when referring to the amount of each component in the composition, when a plurality of substances corresponding to each component are present in the composition, the total amount of the plurality of substances present in the composition means do.
본 발명의 n 형 확산층 형성 조성물은 적어도 도너 원소를 함유하는 유리 분말 (이하, 단순히 「유리 분말」이라고 칭하는 경우가 있다) 과 분산매를 함유하고, 또한 도포성 등을 고려하여 그 밖의 첨가제를 필요에 따라 함유해도 된다.The n-type diffusion layer-forming composition of the present invention contains at least a glass powder containing a donor element (hereinafter may be simply referred to as "glass powder") and a dispersion medium, May be added.
여기서, n 형 확산층 형성 조성물이란, 도너 원소를 함유하고, 실리콘 기판에 도포한 후에 이 도너 원소를 열확산시킴으로써 n 형 확산층을 형성하는 것이 가능한 재료를 말한다. 본 발명의 n 형 확산층 형성 조성물을 사용함으로써, 원하는 부위에만 n 형 확산층이 형성되고, 이면이나 측면에는 불필요한 n 형 확산층이 형성되지 않는다.Here, the composition for forming an n-type diffusion layer means a material containing a donor element and capable of forming an n-type diffusion layer by applying the donor element to a silicon substrate after thermal diffusion. By using the n-type diffusion layer forming composition of the present invention, an n-type diffusion layer is formed only at a desired site, and an unnecessary n-type diffusion layer is not formed on the back surface or the side surface.
따라서, 본 발명의 n 형 확산층 형성 조성물을 적용하면, 종래 널리 채용되어 있는 기상 반응법에서는 필수인 사이드 에칭 공정이 불필요해져, 공정이 간이화 된다. 또, 이면에 형성된 n 형 확산층을 p+ 형 확산층으로 변환하는 공정도 불필요해진다. 그 때문에, 이면의 p+ 형 확산층의 형성 방법이나 이면 전극의 재질, 형상 및 두께가 제한되지 않아, 적용하는 제조 방법이나 재질, 형상의 선택지가 넓어진다. 또, 자세한 것은 후술하는데, 이면 전극의 두께에서 기인한 실리콘 기판 내의 내부 응력의 발생이 억제되어, 실리콘 기판의 휨도 억제된다.Therefore, when the composition for forming an n-type diffusion layer of the present invention is applied, the side etching process, which is essential in the widely used gas phase reaction method, becomes unnecessary, and the process is simplified. In addition, a step of converting the n-type diffusion layer formed on the back surface into the p + -type diffusion layer is also unnecessary. Therefore, the method of forming the p + -type diffusion layer on the back surface and the material, shape, and thickness of the back electrode are not limited, and the choice of the manufacturing method, material, and shape to be applied is widened. The details will be described later. The occurrence of internal stress in the silicon substrate due to the thickness of the back electrode is suppressed, and warpage of the silicon substrate is also suppressed.
또한, 본 발명의 n 형 확산층 형성 조성물에 함유되는 유리 분말은 소성에 의해 용융되어, n 형 확산층 상에 유리층을 형성한다. 그러나 종래의 기상 반응법이나 인산염이 함유된 용액을 도포하는 방법에 있어서도 n 형 확산층 상에 유리층이 형성되어 있으며, 따라서 본 발명에 있어서 생성된 유리층은 종래의 방법과 마찬가지로 에칭에 의해 제거할 수 있다. 따라서, 본 발명의 n 형 확산층 형성 조성물은 종래의 방법과 비교해도 불필요한 생성물을 발생시키지 않아, 공정을 늘릴 필요도 없다.The glass powder contained in the composition for forming an n-type diffusion layer of the present invention is fused by firing to form a glass layer on the n-type diffusion layer. However, even in the conventional vapor phase reaction method or the method of applying the phosphate-containing solution, the glass layer is formed on the n-type diffusion layer. Therefore, the glass layer produced in the present invention is removed by etching . Therefore, the n-type diffusion layer forming composition of the present invention does not generate unnecessary products even when compared with the conventional method, and the process need not be increased.
또, 유리 분말 중의 도너 성분은 소성 중에도 잘 휘산되지 않기 때문에, 휘산 가스의 발생에 의해 표면뿐만 아니라 이면이나 측면에까지 n 형 확산층이 형성된다는 것이 억제된다. 이 이유로서, 예를 들어 도너 성분이 유리 분말 중의 원소와 결합되어 있거나, 또는 유리 중에 도입되어 있기 때문에, 잘 휘산되지 않는다고 생각된다.In addition, since the donor component in the glass powder is not well evaporated during firing, it is suppressed that the n-type diffusion layer is formed not only on the surface but also on the back surface or the side surface due to the generation of the vaporized gas. For this reason, it is considered that the donor component is not well evaporated because, for example, the donor component is bonded to the element in the glass powder or is introduced into the glass.
이와 같이, 본 발명의 n 형 확산층 형성 조성물은 원하는 부위에 원하는 농도의 n 형 확산층을 형성하는 것이 가능하므로, n 형 도펀트 농도가 높은 선택적인 영역을 형성하는 것이 가능해진다. 한편, n 형 확산층의 일반적인 방법인 기상 반응법이나, 인산염 함유 용액을 사용하는 방법에 의해, n 형 도펀트 농도가 높은 선택적인 영역을 형성하는 것은 일반적으로는 곤란하다.Thus, the n-type diffusion layer forming composition of the present invention can form an n-type diffusion layer of a desired concentration at a desired site, and thus it is possible to form a selective region having a high n-type dopant concentration. On the other hand, it is generally difficult to form a selective region having a high n-type dopant concentration by a vapor-phase reaction method which is a general method of an n-type diffusion layer or a method using a phosphate-containing solution.
본 발명에 관련된 도너 원소를 함유하는 유리 분말에 대해 상세하게 설명한다.The glass powder containing the donor element according to the present invention will be described in detail.
도너 원소란, 실리콘 기판 중에 도핑시킴으로써 n 형 확산층을 형성하는 것이 가능한 원소이다. 도너 원소로는 제 15 족 원소를 사용할 수 있으며, 예를 들어 P (인), Sb (안티몬), Bi (비스무트) 및 As (비소) 등을 들 수 있다. 안전성, 유리화의 용이함 등의 관점에서, P 또는 Sb 가 바람직하다.The donor element is an element capable of forming an n-type diffusion layer by doping into a silicon substrate. As the donor element, a Group 15 element can be used, and examples thereof include P (phosphorus), Sb (antimony), Bi (bismuth) and As (arsenic). From the standpoints of safety and easiness of vitrification, P or Sb is preferable.
도너 원소를 유리 분말에 도입하기 위해서 사용하는 도너 원소 함유 물질로는 P2O3, P2O5, Sb2O3, Bi2O3 및 As2O3 을 들 수 있으며, P2O3, P2O5 및 Sb2O3 에서 선택되는 적어도 1 종을 사용하는 것이 바람직하다.P 2 O 3 , P 2 O 5 , Sb 2 O 3 , Bi 2 O 3, and As 2 O 3 can be used as donor element-containing materials for introducing the donor element into the glass powder, and P 2 O 3 , P 2 O 5 and Sb 2 O 3 is preferably used.
또, 도너 원소를 함유하는 유리 분말은 필요에 따라 성분 비율을 조정함으로써, 용융 온도, 연화 온도, 유리 전이점, 화학적 내구성 등을 제어하는 것이 가능하다. 또한, 이하에 기재하는 유리 성분 물질을 함유하는 것이 바람직하다.It is also possible to control the melting temperature, the softening temperature, the glass transition point, the chemical durability, etc. of the glass powder containing the donor element by adjusting the proportions of the components as required. Further, it is preferable to contain the glass component material described below.
유리 성분 물질로는, SiO2, K2O, Na2O, Li2O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, V2O5, SnO, ZrO2, MoO3, La2O3, Nb2O5, Ta2O5, Y2O3, TiO2, ZrO2, GeO2, TeO2 및 Lu2O3 등을 들 수 있으며, SiO2, K2O, Na2O, Li2O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO2, 및 MoO3 에서 선택되는 적어도 1 종을 사용하는 것이 바람직하다.As the glass component material, SiO 2 , K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, V 2 O 5 , SnO, ZrO 2 , MoO 3 , La 2 O 3 , Nb 2 O 5 , Ta 2 O 5 , Y 2 O 3 , TiO 2 , ZrO 2 , GeO 2 , TeO 2 and Lu 2 O 3 And the like, SiO 2, K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO,
도너 원소를 함유하는 유리 분말의 구체예로는, 상기 도너 원소 함유 물질과 상기 유리 성분 물질의 쌍방을 함유하는 계를 들 수 있으며, P2O5-SiO2 계 (도너 원소 함유 물질-유리 성분 물질의 순서로 기재, 이하 동일), P2O5-K2O 계, P2O5-Na2O 계, P2O5-Li2O 계, P2O5-BaO 계, P2O5-SrO 계, P2O5-CaO 계, P2O5-MgO 계, P2O5-BeO 계, P2O5-ZnO 계, P2O5-CdO 계, P2O5-PbO 계, P2O5-SnO 계, P2O5-GeO2 계, P2O5-TeO2 계 등의 도너 원소 함유 물질로서 P2O5 를 함유하는 계, 상기의 P2O5 를 함유하는 계인 P2O5 대신에 도너 원소 함유 물질로서 Sb2O3 을 함유하는 계의 유리 분말을 들 수 있다.Specific examples of the glass powder containing the donor element include a system containing both the donor element-containing substance and the glass component substance, and the P 2 O 5 -SiO 2 system (donor element-containing substance-glass component described in the order of material, hereinafter the same), P 2 O 5 -K 2 O -based, P 2 O 5 -Na 2 O-based, P 2 O 5 -Li 2 O-based, P 2 O 5 -BaO-based, P 2 O 5 -SrO-based, P 2 O 5 -CaO-based, P 2 O 5 -MgO-based, P 2 O 5 -BeO-based, P 2 O 5 -ZnO-based, P 2 O 5 -CdO-based, P 2 O 5 -PbO-based, P 2 O 5 -SnO-based, P 2 O 5 based -GeO 2, P 2 O 5 based -TeO 2 including the donor element-containing material as P 2 O 5 system, wherein the P 2 O containing sealed P 2 O 5 containing 5 Instead, glass powder of a system containing Sb 2 O 3 as a donor element-containing substance can be mentioned.
또한, P2O5 -Sb2O3 계, P2O5 -As2O3 계 등과 같이, 2 종류 이상의 도너 원소 함유 물질을 함유하는 유리 분말이어도 된다. In addition, P 2 O 5 -Sb 2 O 3 System, P 2 O 5 -As 2 O 3 system or the like, or a glass powder containing two or more kinds of donor element-containing materials.
상기에서는 2 성분을 함유하는 복합 유리를 예시했는데, P2O5-SiO2-CaO 등과 같이, 3 성분 이상의 물질을 함유하는 유리 분말이어도 된다.In the above, a composite glass containing two components is exemplified, but a glass powder containing three or more components such as P 2 O 5 -SiO 2 -CaO may be used.
또, 유리 분말 중의 도너 원소 함유 물질의 함유 비율은, 도너 원소의 실리콘 기판 중에 대한 도핑 농도, 유리 분말의 용융 온도, 연화 온도, 유리 전이점, 화학적 내구성을 고려하여 1 질량% 이상 80 질량% 이하이다.The content ratio of the donor element-containing substance in the glass powder is preferably 1% by mass or more and 80% by mass or less in consideration of the doping concentration of the donor element in the silicon substrate, the melting temperature of the glass powder, the softening temperature, the glass transition point, to be.
유리 분말 중의 도너 원소 함유 물질의 함유 비율이 1 질량% 미만인 경우, 도너 원소의 실리콘 기판 중에 대한 도핑 농도가 지나치게 낮아, n 형 확산층이 충분히 형성되지 않는다. 또, P2O5 등의 도너 원소 함유 물질의 함유 비율이 80 질량% 보다 큰 경우, 유리 분말 중에서 도너 원소 함유 물질이 흡습하여, 예를 들어 도너 원소 함유 물질이 P2O5 인 경우에는 인산 (H3PO4) 을 형성한다. 이 결과, H3PO4 등의 흡습 물질이 열확산 처리 중에 휘산되어 버리므로, P (인) 등의 도너 원소의 확산이 측면 및 이면에도 미쳐, 표면뿐만 아니라, 원하는 부위 이외의 측면, 이면에도 n 형 확산층이 형성될 우려가 있다.When the content of the donor element-containing substance in the glass powder is less than 1% by mass, the doping concentration of the donor element with respect to the silicon substrate is too low, and the n-type diffusion layer is not sufficiently formed. When the content of the donor element-containing substance such as P 2 O 5 is more than 80% by mass, the donor element-containing substance absorbs moisture in the glass powder. For example, when the donor element-containing substance is P 2 O 5 , (H 3 PO 4 ). As a result, H 3 PO 4 The diffusion of the donor element such as P (phosphorus) is likely to spread on the side surface and the back surface, and there is a possibility that the n-type diffusion layer is formed not only on the surface but also on the side surface and back surface have.
또한, 유리 분말 중의 도너 원소 함유 물질의 함유 비율은 2 질량% 이상 75 질량% 이하인 것이 바람직하고, 10 질량% 이상 70 질량% 이하인 것이 보다 바람직하다.The content of the donor element-containing substance in the glass powder is preferably 2% by mass or more and 75% by mass or less, and more preferably 10% by mass or more and 70% by mass or less.
특히, n 형 확산층이 충분히 형성되는 도너 원소의 양을 감안하면서, n 형 확산층 형성 조성물에 도너 원소를 일정량 이상 첨가해도, 형성된 n 형 확산층을 갖는 표면의 시트 저항은 일정치 이상으로는 저하되지 않게 되는 점과, 도너 원소 함유 물질의 휘산의 영향을 억제할 필요가 있는 점을 고려하면, 유리 분말 중의 도너 원소 함유 물질의 함유 비율은 30 질량% 이상 70 질량% 이하인 것이 더욱 바람직하다.Particularly, even when a donor element is added to the n-type diffusion layer forming composition in an amount more than a certain amount, the sheet resistance of the surface having the formed n-type diffusion layer is not lowered to a predetermined value or more while taking into account the amount of the donor element in which the n-type diffusion layer is sufficiently formed And that the effect of volatilization of the donor element-containing substance must be suppressed, the content ratio of the donor element-containing substance in the glass powder is more preferably 30 mass% or more and 70 mass% or less.
또, 유리 분말 중의 유리 성분 물질의 함유 비율은, 용융 온도, 연화 온도, 유리 전이점, 화학적 내구성을 고려하여 적절히 설정하는 것이 바람직하고, 일반적으로는 20 질량% 이상 99 질량% 이하인 것이 바람직하고, 25 질량% 이상 98 질량% 이하인 것이 보다 바람직하며, 30 질량% 이상 90 질량% 이하인 것이 더욱 바람직하다.The content of the glass component in the glass powder is preferably set appropriately in consideration of the melting temperature, the softening temperature, the glass transition point, and the chemical durability, and is generally preferably 20% by mass or more and 99% More preferably 25 mass% or more and 98 mass% or less, and still more preferably 30 mass% or more and 90 mass% or less.
구체적으로는, P2O5-SiO2 계 유리의 경우에는 SiO2 의 함유 비율은 20 질량% 이상 99 질량% 이하인 것이 바람직하고, 30 질량% 이상 90 질량% 이하인 것이 보다 바람직하다.Specifically, in the case of P 2 O 5 -SiO 2 glass, the content of SiO 2 is preferably 20 mass% or more and 99 mass% or less, more preferably 30 mass% or more and 90 mass% or less.
유리 분말의 연화 온도는 확산 처리시의 확산성, 액 흘러내림의 관점에서, 200 ℃ ∼ 1000 ℃ 인 것이 바람직하고, 300 ℃ ∼ 900 ℃ 인 것이 보다 바람직하다.The softening temperature of the glass powder is preferably 200 ° C to 1000 ° C, more preferably 300 ° C to 900 ° C, from the viewpoints of the diffusing property and the liquid flow-down at the time of the diffusion treatment.
또한, 유리 분말의 연화 온도는 공지된 시차열 분석 장치 (DTA) 에 의해, 그 흡열 피크로부터 용이하게 측정할 수 있다.Further, the softening temperature of the glass powder can be easily measured from its endothermic peak by a known differential thermal analysis apparatus (DTA).
유리 분말의 형상으로는 대략 구상, 편평상, 블록상, 판상 및 인편상 등을 들 수 있으며, n 형 확산층 형성 조성물로 했을 경우의 기판에 대한 도포성이나 균일 확산성의 관점에서, 대략 구상, 편평상 또는 판상인 것이 바람직하다. 유리 분말의 입경은 100 ㎛ 이하인 것이 바람직하다. 100 ㎛ 이하의 입경을 갖는 유리 분말을 사용한 경우에는, 평활한 도막을 얻기 쉽다. 또한, 유리 분말의 입경은 50 ㎛ 이하인 것이 보다 바람직하다. 또한, 하한은 특별히 제한되지 않지만, 0.01 ㎛ 이상인 것이 바람직하다.Examples of the shape of the glass powder include a roughly spherical shape, a flat shape, a block shape, a plate shape, and a scaly shape. From the viewpoint of the coating property and the uniform diffusibility of the substrate when the composition is formed into an n-type diffusion layer, And it is preferably flat or plate-like. The particle diameter of the glass powder is preferably 100 占 퐉 or less. When a glass powder having a particle size of 100 mu m or less is used, a smooth coated film can be easily obtained. It is more preferable that the glass powder has a particle diameter of 50 mu m or less. The lower limit is not particularly limited, but is preferably 0.01 m or more.
여기서, 유리의 입경은 평균 입자경을 나타내고, 레이저 산란 회절법 입도 분포 측정 장치 등에 의해 측정할 수 있다.Here, the particle diameter of the glass represents an average particle diameter and can be measured by a particle size distribution measuring apparatus such as a laser scattering diffraction method.
도너 원소를 함유하는 유리 분말은 이하의 순서로 제조된다.The glass powder containing the donor element is prepared in the following order.
맨 처음에 원료를 칭량하고, 도가니에 충전한다. 도가니의 재질로는, 백금, 백금-로듐, 이리듐, 알루미나, 석영, 탄소 등을 들 수 있는데, 용융 온도, 분위기, 용융 물질과의 반응성 등을 고려하여 적절히 선택된다.The raw materials are weighed at the beginning and charged into the crucible. Examples of materials for the crucible include platinum, platinum-rhodium, iridium, alumina, quartz, and carbon. These materials are suitably selected in consideration of the melting temperature, atmosphere, reactivity with the molten material, and the like.
다음으로, 전기로에서 유리 조성에 따른 온도에서 가열하여 융액으로 한다. 이 때, 융액이 균일하게 되도록 교반하는 것이 바람직하다.Next, the melt is heated at a temperature according to the glass composition in the electric furnace. At this time, it is preferable to stir the solution so that the melt becomes homogeneous.
계속해서 얻어진 융액을 그라파이트판, 백금판, 백금-로듐 합금판, 지르코니아판 등의 위에 흘리기 시작하여 융액을 유리화한다.Subsequently, the melt obtained is flowed on a graphite plate, a platinum plate, a platinum-rhodium alloy plate, a zirconia plate and the like to vitrify the melt.
마지막으로 유리를 분쇄하여 분말상으로 한다. 분쇄에는 제트밀, 비즈밀, 볼밀 등 공지된 방법을 적용할 수 있다.Finally, the glass is pulverized into a powder. For grinding, a known method such as jet mill, bead mill or ball mill can be applied.
n 형 확산층 형성 조성물 중의 도너 원소를 함유하는 유리 분말의 함유 비율은, 도포성, 도너 원소의 확산성 등을 고려하여 결정된다. 일반적으로는, n 형 확산층 형성 조성물 중의 유리 분말의 함유 비율은 0.1 질량% 이상 95 질량% 이하인 것이 바람직하고, 1 질량% 이상 90 질량% 이하인 것이 보다 바람직하며, 1.5 질량% 이상 85 질량% 이하인 것이 더욱 바람직하고, 2 질량% 이상 80 질량% 이하가 특히 바람직하다.The content of the donor element-containing glass powder in the n-type diffusion layer-forming composition is determined in consideration of the applicability, the diffusibility of the donor element, and the like. Generally, the content of the glass powder in the n-type diffusion layer forming composition is preferably from 0.1 to 95% by mass, more preferably from 1 to 90% by mass, further preferably from 1.5 to 85% by mass , And particularly preferably 2% by mass or more and 80% by mass or less.
다음으로, 분산매에 대해 설명한다.Next, the dispersion medium will be described.
분산매란, 조성물 중에 있어서 상기 유리 분말을 분산시키는 매체이다. 구체적으로 분산매로는, 바인더나 용제 등이 채용된다.The dispersion medium is a medium in which the glass powder is dispersed in the composition. Specifically, as the dispersion medium, a binder or a solvent is employed.
바인더로는, 예를 들어, 폴리비닐알코올, 폴리아크릴아미드류, 폴리비닐아미드류, 폴리비닐피롤리돈, 폴리에틸렌옥사이드류, 폴리술폰산, 아크릴아미드알킬술폰산, 셀룰로오스에테르류, 셀룰로오스 유도체, 카르복시메틸셀룰로오스, 하이드록시에틸셀룰로오스, 에틸셀룰로오스, 젤라틴, 전분 및 전분 유도체, 알긴산나트륨 류, 잔탄, 구아 및 구아 유도체, 스클레로글루칸 및 스클레로글루칸 유도체, 트래거캔스 및 트래거캔스 유도체, 덱스트린 및 덱스트린 유도체, (메트)아크릴산 수지, (메트)아크릴산에스테르 수지 (예를 들어, 알킬(메트)아크릴레이트 수지, 디메틸아미노에틸(메트)아크릴레이트 수지 등), 부타디엔 수지, 스티렌 수지, 또는 이들의 공중합체, 그 밖에도 실록산 수지를 적절히 선택할 수 있다. 이들은 1 종류를 단독으로 사용하거나 또는 2 종류 이상을 조합하여 사용된다.The binder includes, for example, polyvinyl alcohol, polyacrylamides, polyvinylamides, polyvinylpyrrolidone, polyethylene oxides, polysulfonic acid, acrylamide alkylsulfonic acid, cellulose ethers, cellulose derivatives, carboxymethylcellulose , Hydroxyethylcellulose, ethylcellulose, gelatin, starch and starch derivatives, sodium alginate, xanthan, guar and guar derivatives, scleroglucan and scleroglucan derivatives, tragacanth and tragacanth derivatives, dextrin and dextrin (Meth) acrylate resin, a (meth) acrylate resin, a butadiene resin, a styrene resin, or a copolymer thereof (for example, , And siloxane resin may be appropriately selected. These may be used singly or in combination of two or more.
바인더의 분자량은 특별히 제한되지 않고, 조성물로서의 원하는 점도를 감안하여 적절히 조정하는 것이 바람직하다.The molecular weight of the binder is not particularly limited, and it is preferable to adjust it appropriately in consideration of a desired viscosity as a composition.
용제로는, 예를 들어, 아세톤, 메틸에틸케톤, 메틸-n-프로필케톤, 메틸-iso-프로필케톤, 메틸-n-부틸케톤, 메틸-iso-부틸케톤, 메틸-n-펜틸케톤, 메틸-n-헥실케톤, 디에틸케톤, 디프로필케톤, 디-iso-부틸케톤, 트리메틸노나논, 시클로헥사논, 시클로펜타논, 메틸시클로헥사논, 2,4-펜탄디온, 아세토닐아세톤 등의 케톤계 용제 ; 디에틸에테르, 메틸에틸에테르, 메틸-n-프로필에테르, 디-iso-프로필에테르, 테트라하이드로푸란, 메틸테트라하이드로푸란, 디옥산, 디메틸디옥산, 에틸렌글리콜디메틸에테르, 에틸렌글리콜디에틸에테르, 에틸렌글리콜디-n-프로필에테르, 에틸렌글리콜디부틸에테르, 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜디에틸에테르, 디에틸렌글리콜메틸에틸에테르, 디에틸렌글리콜메틸-n-프로필에테르, 디에틸렌글리콜메틸-n-부틸에테르, 디에틸렌글리콜디-n-프로필에테르, 디에틸렌글리콜디-n-부틸에테르, 디에틸렌글리콜메틸-n-헥실에테르, 트리에틸렌글리콜디메틸에테르, 트리에틸렌글리콜디에틸에테르, 트리에틸렌글리콜메틸에틸에테르, 트리에틸렌글리콜메틸-n-부틸에테르, 트리에틸렌글리콜디-n-부틸에테르, 트리에틸렌글리콜메틸-n-헥실에테르, 테트라에틸렌글리콜디메틸에테르, 테트라에틸렌글리콜디에틸에테르, 테트라디에틸렌글리콜메틸에틸에테르, 테트라에틸렌글리콜메틸-n-부틸에테르, 디에틸렌글리콜디-n-부틸에테르, 테트라에틸렌글리콜메틸-n-헥실에테르, 테트라에틸렌글리콜디-n-부틸에테르, 프로필렌글리콜디메틸에테르, 프로필렌글리콜디에틸에테르, 프로필렌글리콜디-n-프로필에테르, 프로필렌글리콜디부틸에테르, 디프로필렌글리콜디메틸에테르, 디프로필렌글리콜디에틸에테르, 디프로필렌글리콜메틸에틸에테르, 디프로필렌글리콜메틸-n-부틸에테르, 디프로필렌글리콜디-n-프로필에테르, 디프로필렌글리콜디-n-부틸에테르, 디프로필렌글리콜메틸-n-헥실에테르, 트리프로필렌글리콜디메틸에테르, 트리프로필렌글리콜디에틸에테르, 트리프로필렌글리콜메틸에틸에테르, 트리프로필렌글리콜메틸-n-부틸에테르, 트리프로필렌글리콜디-n-부틸에테르, 트리프로필렌글리콜메틸-n-헥실에테르, 테트라프로필렌글리콜디메틸에테르, 테트라프로필렌글리콜디에틸에테르, 테트라디프로필렌글리콜메틸에틸에테르, 테트라프로필렌글리콜메틸-n-부틸에테르, 디프로필렌글리콜디-n-부틸에테르, 테트라프로필렌글리콜메틸-n-헥실에테르, 테트라프로필렌글리콜디-n-부틸에테르 등의 에테르계 용제 ; 아세트산메틸, 아세트산에틸, 아세트산n-프로필, 아세트산i-프로필, 아세트산n-부틸, 아세트산i-부틸, 아세트산sec-부틸, 아세트산n-펜틸, 아세트산sec-펜틸, 아세트산3-메톡시부틸, 아세트산메틸펜틸, 아세트산2-에틸부틸, 아세트산2-에틸헥실, 아세트산2-(2-부톡시에톡시)에틸, 아세트산벤질, 아세트산시클로헥실, 아세트산메틸시클로헥실, 아세트산노닐, 아세토아세트산메틸, 아세토아세트산에틸, 아세트산디에틸렌글리콜메틸에테르, 아세트산디에틸렌글리콜모노에틸에테르, 아세트산디에틸렌글리콜-n-부틸에테르, 아세트산디프로필렌글리콜메틸에테르, 아세트산디프로필렌글리콜에틸에테르, 디아세트산글리콜, 아세트산메톡시트리글리콜, 프로피온산에틸, 프로피온산n-부틸, 프로피온산i-아밀, 옥살산디에틸, 옥살산디-n-부틸, 락트산메틸, 락트산에틸, 락트산n-부틸, 락트산n-아밀, 에틸렌글리콜메틸에테르프로피오네이트, 에틸렌글리콜에틸에테르프로피오네이트, 에틸렌글리콜메틸에테르아세테이트, 에틸렌글리콜에틸에테르아세테이트, 디에틸렌글리콜메틸에테르아세테이트, 디에틸렌글리콜에틸에테르아세테이트, 디에틸렌글리콜-n-부틸에테르아세테이트, 프로필렌글리콜메틸에테르아세테이트, 프로필렌글리콜에틸에테르아세테이트, 프로필렌글리콜프로필에테르아세테이트, 디프로필렌글리콜메틸에테르아세테이트, 디프로필렌글리콜에틸에테르아세테이트, γ-부티로락톤, γ-발레로락톤 등의 에스테르계 용제 ; 아세토니트릴, N-메틸피롤리디논, N-에틸피롤리디논, N-프로필피롤리디논, N-부틸피롤리디논, N-헥실피롤리디논, N-시클로헥실피롤리디논, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, 디메틸술폭사이드 등의 비프로톤성 극성 용제 ; 메탄올, 에탄올, n-프로판올, i-프로판올, n-부탄올, i-부탄올, sec-부탄올, t-부탄올, n-펜탄올, i-펜탄올, 2-메틸부탄올, sec-펜탄올, t-펜탄올, 3-메톡시부탄올, n-헥산올, 2-메틸펜탄올, sec-헥산올, 2-에틸부탄올, sec-헵탄올, n-옥탄올, 2-에틸헥산올, sec-옥탄올, n-노닐알코올, n-데칸올, sec-운데실알코올, 트리메틸노닐알코올, sec-테트라데실알코올, sec-헵타데실알코올, 페놀, 시클로헥산올, 메틸시클로헥산올, 벤질알코올, 에틸렌글리콜, 1,2-프로필렌글리콜, 1,3-부틸렌글리콜, 디에틸렌글리콜, 디프로필렌글리콜, 트리에틸렌글리콜, 트리프로필렌글리콜 등의 알코올계 용제 ; 에틸렌글리콜메틸에테르, 에틸렌글리콜에틸에테르, 에틸렌글리콜모노페닐에테르, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜모노-n-부틸에테르, 디에틸렌글리콜모노-n-헥실에테르, 에톡시트리글리콜, 테트라에틸렌글리콜모노-n-부틸에테르, 프로필렌글리콜모노메틸에테르, 디프로필렌글리콜모노메틸에테르, 디프로필렌글리콜모노에틸에테르, 트리프로필렌글리콜모노메틸에테르 등의 글리콜모노에테르계 용제 ; α-테르피넨, α-테르피네올, 미르센, 알로오시멘, 리모넨, 디펜텐,α-피넨, β-피넨, 테르피네올, 카르본, 오시멘, 펠란드렌 등의 테르펜계 용제 ; 물을 들 수 있다. 이들은 1 종류를 단독으로 사용하거나 또는 2 종류 이상을 조합하여 사용된다.Examples of the solvent include acetone, methyl ethyl ketone, methyl n-propyl ketone, methyl-iso-propyl ketone, methyl n-butyl ketone, methyl- diethyl ketone, di-iso-butyl ketone, trimethylnonanone, cyclohexanone, cyclopentanone, methylcyclohexanone, 2,4-pentanedione, acetonyl acetone and the like Ketone solvents; Diethyl ether, ethylene glycol diethyl ether, ethylene glycol diethyl ether, ethylene glycol diethyl ether, ethylene glycol diethyl ether, ethylene glycol diethyl ether, ethylene glycol diethyl ether, Diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol methyl-n-propyl ether, diethylene glycol methyl n-propyl ether, diethylene glycol diisopropyl ether, ethylene glycol dibutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, Butyl ether, diethylene glycol di-n-propyl ether, diethylene glycol di-n-butyl ether, diethylene glycol methyl-n-hexyl ether, triethylene glycol dimethyl ether, triethylene glycol diethyl ether, triethylene glycol Methyl ethyl ether, triethylene glycol methyl n-butyl ether, triethylene glycol di-n-butyl ether, triethylene glycol methyl n-hexyl ether, Tetraethylene glycol diethyl ether, tetraethylene glycol methyl ethyl ether, tetraethylene glycol methyl-n-butyl ether, diethylene glycol di-n-butyl ether, tetraethylene glycol methyl-n-hexyl ether , Propylene glycol diethyl ether, propylene glycol di-n-propyl ether, propylene glycol dibutyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, dipropylene glycol diethyl ether, Dipropylene glycol diethyl ether, dipropylene glycol methyl ethyl ether, dipropylene glycol methyl n-butyl ether, dipropylene glycol di-n-propyl ether, dipropylene glycol di-n-butyl ether, dipropylene glycol methyl n-hexyl ether, Dimethyl ether, tripropylene glycol diethyl ether, tripropylene glycol methyl ethyl ether, N-hexyl ether, tetrapropyleneglycol dimethyl ether, tetrapropyleneglycol diethylether, tetradipropyleneglycol methylethylether, tetrapropyleneglycol methylethylether, tripropyleneglycol methylethylether, tripropylene glycol diethylether, Ether solvents such as tetrapropylene glycol methyl-n-butyl ether, dipropylene glycol di-n-butyl ether, tetrapropylene glycol methyl-n-hexyl ether and tetrapropylene glycol di-n-butyl ether; Propyl acetate, n-butyl acetate, i-butyl acetate, sec-butyl acetate, n-pentyl acetate, sec-pentyl acetate, 3-methoxybutyl acetate, methyl acetate Ethyl acetate, ethyl acetate, benzyl acetate, cyclohexyl acetate, methylcyclohexyl acetate, nonyl acetate, methyl acetoacetate, ethyl acetoacetate, ethyl acetoacetate, ethyl acetoacetate, Diethylene glycol monoethyl ether acetate, diethylene glycol-n-butyl ether acetate, dipropylene glycol methyl ether acetate, dipropylene glycol ethyl ether acetate, diacetic acid glycol, methoxytriglycol acetate, propionic acid Ethyl, n-butyl propionate, i-amyl propionate, diethyl oxalate, di-n-butyl oxalate, methyl lactate, ethyl lactate , N-butyl lactate, n-amyl lactate, ethylene glycol methyl ether propionate, ethylene glycol ethyl ether propionate, ethylene glycol methyl ether acetate, ethylene glycol ethyl ether acetate, diethylene glycol methyl ether acetate, diethylene glycol ethyl Propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, dipropylene glycol methyl ether acetate, dipropylene glycol ethyl ether acetate, gamma -butyrolactone acetate, diethylene glycol n-butyl ether acetate, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, ,? -valerolactone, and other ester solvents; N-methylpyrrolidinone, N-ethylpyrrolidinone, N-propylpyrrolidinone, N-butylpyrrolidinone, N-hexylpyrrolidinone, N-cyclohexylpyrrolidinone, N, N- Aprotic polar solvents such as dimethylformamide, N, N-dimethylacetamide and dimethylsulfoxide; Propanol, n-butanol, i-butanol, sec-butanol, t-butanol, Butanol, sec-hexanol, sec-heptanol, n-octanol, 2-ethylhexanol, sec-octanol , n-nonyl alcohol, n-decanol, secundecyl alcohol, trimethylnonyl alcohol, sec-tetradecyl alcohol, sec-heptadecyl alcohol, phenol, cyclohexanol, methylcyclohexanol, benzyl alcohol, Alcohol solvents such as 1,2-propylene glycol, 1,3-butylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol and tripropylene glycol; Ethylene glycol monoethyl ether, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol monophenyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol mono-n-butyl ether, diethylene glycol mono- Glycol monoether solvents such as ethoxy triglycol, tetraethylene glycol mono-n-butyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and tripropylene glycol monomethyl ether; terpene solvents such as? -terpinene,? -terpineol, myrcene, aloocimene, limonene, dipentene,? -pinene,? -pinene, terpineol, carbone, ocimene and pellandrene; Water can be heard. These may be used singly or in combination of two or more.
n 형 확산층 형성 조성물로 했을 경우, 기판에 대한 도포성의 관점에서, α-테르피네올, 디에틸렌글리콜모노-n-부틸에테르, 아세트산2-(2-부톡시에톡시)에틸이 바람직하다.When an n-type diffusion layer-forming composition is used, α-terpineol, diethylene glycol mono-n-butyl ether and 2- (2-butoxyethoxy) ethyl acetate are preferable from the viewpoint of coatability on a substrate.
n 형 확산층 형성 조성물 중의 분산매의 함유 비율은, 도포성, 도너 농도를 고려하여 결정된다.The content of the dispersion medium in the n-type diffusion layer-forming composition is determined in consideration of the coating property and the donor concentration.
n 형 확산층 형성 조성물의 점도는, 도포성을 고려하여 10 mPa·S 이상 1000000 mPa·S 이하인 것이 바람직하고, 50 mPa·S 이상 500000 mPa·S 이하인 것이 보다 바람직하다.The viscosity of the n-type diffusion layer forming composition is preferably 10 mPa · S or more and 1000000 mPa · S or less, more preferably 50 mPa · S or more and 500000 mPa · S or less, in consideration of coating properties.
또한, n 형 확산층 형성 조성물은 그 밖의 첨가제를 함유해도 된다. 그 밖의 첨가물로는, 예를 들어 상기 유리 분말과 반응하기 쉬운 금속을 들 수 있다.The n-type diffusion layer forming composition may contain other additives. Other additives include, for example, metals that are likely to react with the glass powder.
n 형 확산층 형성 조성물은 반도체 기판 상에 도포되고, 고온에서 열처리됨으로써 n 형 확산층을 형성하는데, 그 때에 표면에 유리가 형성된다. 이 유리는 불화수소산 등의 산에 침지하여 제거되지만, 유리의 종류에 따라서는 잘 제거되지 않는 것이 있다. 그 경우에, 유리와 결정화되기 쉬운 Ag, Mn, Cu, Fe, Zn, Si 등의 금속을 첨가해 둠으로써, 산 세정 후에 용이하게 유리를 제거할 수 있다. 이들 중에서도, Ag, Si, Cu, Fe, Zn 및 Mn 에서 선택되는 적어도 1 종을 사용하는 것이 바람직하고, Ag, Si 및 Zn 에서 선택되는 적어도 1 종을 사용하는 것이 보다 바람직하며, Ag 를 사용하는 것이 특히 바람직하다.The n-type diffusion layer-forming composition is applied onto a semiconductor substrate and is heat-treated at a high temperature to form an n-type diffusion layer, in which glass is formed on the surface. This glass is removed by immersion in an acid such as hydrofluoric acid, but it may not be removed well depending on the type of glass. In this case, by adding a metal such as Ag, Mn, Cu, Fe, Zn, or Si which is easily crystallized, glass can be easily removed after acid cleaning. Of these, at least one selected from Ag, Si, Cu, Fe, Zn and Mn is preferably used, and it is more preferable to use at least one selected from Ag, Si and Zn, Is particularly preferable.
상기 금속의 함유 비율은 유리의 종류나 당해 금속의 종류에 따라 적절히 조정하는 것이 바람직하고, 일반적으로는 상기 유리 분말에 대해 0.01 질량% 이상 10 질량% 이하인 것이 바람직하다.The content of the metal is preferably adjusted appropriately according to the kind of the glass and the kind of the metal, and it is generally preferably 0.01% by mass or more and 10% by mass or less with respect to the glass powder.
다음으로, 본 발명의 n 형 확산층 및 태양 전지 소자의 제조 방법에 대해, 도 1 을 참조하면서 설명한다. 도 1 은 본 발명의 태양 전지 소자의 제조 공정의 일례를 개념적으로 나타내는 모식 단면도이다. 이후의 도면에 있어서는, 공통되는 구성 요소에 동일한 부호를 부여한다.Next, an n-type diffusion layer and a manufacturing method of the solar cell element of the present invention will be described with reference to Fig. 1 is a schematic sectional view schematically showing an example of a manufacturing process of a solar cell element of the present invention. In the following drawings, common elements are given the same reference numerals.
도 1 (1) 에서는, p 형 반도체 기판 (10) 인 실리콘 기판에 알칼리 용액을 부여하여 데미지층을 제거하고, 텍스처 구조를 에칭에 의해 얻는다.1 (1), an alkaline solution is applied to a silicon substrate which is a p-
상세하게는, 잉곳에서 슬라이스했을 때에 발생하는 실리콘 표면의 데미지층을 20 질량% 가성 소다로 제거한다. 이어서 1 질량% 가성 소다와 10 질량% 이소프로필알코올의 혼합액에 의해 에칭을 실시하여, 텍스처 구조를 형성한다 (도 중에서는 텍스처 구조의 기재를 생략한다). 태양 전지 소자는 수광면 (표면) 측에 텍스처 구조를 형성함으로써, 광 가둠 효과가 촉진되어 고효율화가 도모된다.Specifically, the damage layer on the silicon surface, which is generated when slicing the ingot, is removed with caustic soda of 20 mass%. Subsequently, etching is performed with a mixed solution of 1 mass% of caustic soda and 10 mass% of isopropyl alcohol to form a texture structure (the description of the texture structure is omitted in the drawing). The solar cell element forms a texture structure on the light-receiving surface (surface) side, so that the light-shielding effect is promoted and high efficiency is achieved.
도 1 (2) 에서는, p 형 반도체 기판 (10) 의 표면, 즉 수광면이 되는 면에 상기 n 형 확산층 형성 조성물을 도포하여, n 형 확산층 형성 조성물층 (11) 을 형성한다. 본 발명에서는 도포 방법에는 제한이 없지만, 예를 들어, 인쇄법, 스핀법, 브러시 도포, 스프레이법, 닥터 블레이드법, 롤코터법, 잉크젯법 등이 있다.In Fig. 1 (2), the n-type diffusion layer forming composition is applied to the surface of the p-
상기 n 형 확산층 형성 조성물의 도포량으로는 특별히 제한은 없다. 예를 들어, 유리 분말량으로서 0.01 g/㎡ ∼ 100 g/㎡ 로 할 수 있고, 0.1 g/㎡ ∼ 10 g/㎡ 인 것이 바람직하다.The coating amount of the n-type diffusion layer forming composition is not particularly limited. For example, the amount of the glass powder may be 0.01 g / m2 to 100 g / m2, preferably 0.1 g / m2 to 10 g / m2.
또한, n 형 확산층 형성 조성물의 조성에 따라서는, 도포 후에 조성물 중에 함유되는 용제를 휘발시키기 위한 건조 공정을 형성해도 된다. 이 경우에는, 80 ∼ 300 ℃ 정도의 온도에서 핫 플레이트를 사용하는 경우에는 1 ∼ 10 분, 건조기 등을 사용하는 경우에는 10 ∼ 30 분 정도로 건조시킨다. 이 건조 조건은 n 형 확산층 형성 조성물의 용제 조성에 의존하고 있으며, 본 발명에서는 특별히 상기 조건에 한정되지 않는다.Further, depending on the composition of the n-type diffusion layer forming composition, a drying step for volatilizing the solvent contained in the composition after application may be formed. In this case, if a hot plate is used at a temperature of about 80 to 300 ° C, it is dried for about 1 to 10 minutes, and if a dryer or the like is used, it is dried for about 10 to 30 minutes. This drying condition depends on the solvent composition of the n-type diffusion layer forming composition, and is not particularly limited to the above conditions in the present invention.
또, 본 발명의 제조 방법을 사용하는 경우에는, 이면의 p+ 형 확산층 (고농도 전계층) (14) 의 제조 방법은 알루미늄에 의한 n 형 확산층에서 p 형 확산층으로의 변환에 의한 방법에 한정되지 않고, 종래 공지된 어떠한 방법도 채용할 수 있어, 제조 방법의 선택지가 넓어진다. 따라서, 예를 들어, B (보론) 등의 제 13 족 원소를 함유하는 조성물 (13) 을 부여하여 고농도 전계층 (14) 을 형성할 수 있다.In the case of using the manufacturing method of the present invention, the method of manufacturing the p + -type diffusion layer (high concentration front layer) 14 on the back surface is not limited to the method of conversion from the n-type diffusion layer to the p- And any conventionally known method can be employed, and the selection of the manufacturing method is widened. Therefore, it is possible to form the high-
상기 B (보론) 등의 제 13 족 원소를 함유하는 조성물 (13) 로는, 예를 들어, 도너 원소를 함유하는 유리 분말 대신에 억셉터 원소를 함유하는 유리 분말을 사용하여, n 형 확산층 형성 조성물과 동일하게 하여 구성되는 p 형 확산층 형성 조성물을 들 수 있다. 억셉터 원소는 제 13 족 원소이면 되고, 예를 들어, B (보론), Al (알루미늄) 및 Ga (갈륨) 등을 들 수 있다. 또, 억셉터 원소를 함유하는 유리 분말은 B2O3, Al2O3 및 Ga2O3 에서 선택되는 적어도 1 종을 함유하는 것이 바람직하다.As the composition (13) containing a
또한, p 형 확산층 형성 조성물을 실리콘 기판의 이면에 부여하는 방법은, 앞에 기술된 n 형 확산층 형성 조성물을 실리콘 기판 상에 도포하는 방법과 동일하다.The method of applying the composition for forming a p-type diffusion layer to the back surface of a silicon substrate is the same as the method of applying the composition for forming an n-type diffusion layer described above on a silicon substrate.
이면에 부여된 p 형 확산층 형성 조성물을, 후술하는 n 형 확산층 형성 조성물에 있어서의 열확산 처리와 동일하게 열확산 처리함으로써, 이면에 고농도 전계층 (14) 을 형성할 수 있다. 또한, p 형 확산층 형성 조성물의 열확산 처리는 n 형 확산층 형성 조성물의 열확산 처리와 동시에 실시하는 것이 바람직하다.The high
이어서, 상기 n 형 확산층 형성 조성물층 (11) 을 형성한 반도체 기판 (10)을 600 ℃ ∼ 1200 ℃ 에서 열확산 처리한다. 이 열확산 처리에 의해, 도 1 (3) 에 나타내는 바와 같이 반도체 기판 중으로 도너 원소가 확산되어, n 형 확산층 (12) 이 형성된다. 열확산 처리에는 공지된 연속로, 배치로 등을 적용할 수 있다. 또, 열확산 처리시의 노 내 분위기는, 공기, 산소, 질소 등으로 적절히 조정할 수도 있다.Next, the
열확산 처리 시간은 n 형 확산층 형성 조성물에 함유되는 도너 원소의 함유율 등에 따라 적절히 선택할 수 있다. 예를 들어, 1 분간 ∼ 60 분간으로 할 수 있고, 2 분간 ∼ 30 분간인 것이 보다 바람직하다.The thermal diffusion treatment time can be appropriately selected depending on the content of the donor element contained in the n-type diffusion layer forming composition and the like. For example, it may be from 1 minute to 60 minutes, more preferably from 2 minutes to 30 minutes.
형성된 n 형 확산층 (12) 의 표면에는 인산 유리 등의 유리층 (도시 생략) 이 형성되어 있기 때문에, 이 인산 유리를 에칭에 의해 제거한다. 에칭으로는, 불화수소산 등의 산에 침지하는 방법, 가성 소다 등의 알칼리에 침지하는 방법 등 공지된 방법을 적용할 수 있다.Since a glass layer (not shown) such as phosphoric acid glass is formed on the surface of the formed n-
도 1 (2) 및 (3) 에 나타내는, 본 발명의 n 형 확산층 형성 조성물 (11) 을 사용하여 n 형 확산층 (12) 을 형성하는 본 발명의 n 형 확산층의 형성 방법에서는, 원하는 부위에만 n 형 확산층 (12) 이 형성되고, 이면이나 측면에는 불필요한 n 형 확산층이 형성되지 않는다.In the method of forming the n-type diffusion layer of the present invention for forming the n-
따라서, 종래 널리 채용되어 있는 기상 반응법에 의해 n 형 확산층을 형성하는 방법에서는, 측면에 형성된 불필요한 n 형 확산층을 제거하기 위한 사이드 에칭 공정이 필수였지만, 본 발명의 제조 방법에 의하면 사이드 에칭 공정이 불필요해져, 공정이 간이화된다.Therefore, in the method of forming the n-type diffusion layer by the widely used gas phase reaction method, a side etching step for removing the unnecessary n-type diffusion layer formed on the side is required. However, according to the manufacturing method of the present invention, So that the process is simplified.
또, 종래의 제조 방법에서는, 이면에 형성된 불필요한 n 형 확산층을 p 형 확산층으로 변환할 필요가 있으며, 이 변환 방법으로는, 이면의 n 형 확산층에 제 13 족 원소인 알루미늄의 페이스트를 도포, 소성하여, n 형 확산층에 알루미늄을 확산시켜 p 형 확산층으로 변환하는 방법이 채용되고 있다. 이 방법에 있어서 p 형 확산층으로의 변환을 충분한 것으로 하고, 또한 p+ 층의 고농도 전계층을 형성하기 위해서는 어느 정도 이상의 알루미늄량이 필요하기 때문에, 알루미늄층을 두껍게 형성할 필요가 있었다. 그러나, 알루미늄의 열팽창률은 기판으로서 사용하는 실리콘의 열팽창률과 크게 상이하기 때문에, 소성 및 냉각의 과정에서 실리콘 기판 중에 큰 내부 응력을 발생시켜, 실리콘 기판의 휨의 원인이 되고 있었다.In addition, in the conventional manufacturing method, it is necessary to convert an unnecessary n-type diffusion layer formed on the back surface into a p-type diffusion layer. In this conversion method, a paste of aluminum as a
이 내부 응력은 결정의 결정입계에 손상을 주어, 전력 손실이 커진다는 과제가 있었다. 또, 휨은, 모듈 공정에 있어서의 태양 전지 소자의 반송이나, 탭선이라 불리는 도선과의 접속에 있어서, 태양 전지 소자를 쉽게 파손시키고 있었다. 최근에는 슬라이스 가공 기술의 향상으로 실리콘 기판의 두께가 박형화되고 있어, 더욱 태양 전지 소자가 균열되기 쉬운 경향이 있다.This internal stress causes damage to crystal grain boundaries of crystals, which leads to an increase in power loss. In addition, the warpage easily breaks the solar cell element in connection with transportation of the solar cell element in the module process or connection with a lead wire called a tap wire. In recent years, the thickness of the silicon substrate is reduced due to the improvement of the slicing processing technology, and the solar cell element tends to be more easily cracked.
그러나 본 발명의 제조 방법에 의하면, 이면에 불필요한 n 형 확산층이 형성되지 않기 때문에, n 형 확산층에서 p 형 확산층으로의 변환을 실시할 필요가 없어져, 알루미늄층을 두껍게 할 필연성이 없어진다. 그 결과, 실리콘 기판 내의 내부 응력의 발생이나 휨을 억제할 수 있다. 결과적으로, 전력 손실의 증대나 태양 전지 소자의 파손을 억제하는 것이 가능해진다.However, according to the manufacturing method of the present invention, since unnecessary n-type diffusion layers are not formed on the back surface, there is no need to perform conversion from the n-type diffusion layer to the p-type diffusion layer and the necessity of thickening the aluminum layer is lost. As a result, generation and warping of internal stress in the silicon substrate can be suppressed. As a result, it is possible to suppress the increase of the power loss and the breakage of the solar cell element.
또, 본 발명의 제조 방법을 사용하는 경우에는, 이면의 p+ 형 확산층 (고농도 전계층) (14) 의 제조 방법은 알루미늄에 의한 n 형 확산층에서 p 형 확산층으로의 변환에 의한 방법에 한정되지 않고, 종래 공지된 어느 방법도 채용할 수 있어, 제조 방법의 선택지가 넓어진다.In the case of using the manufacturing method of the present invention, the method of manufacturing the p + -type diffusion layer (high concentration front layer) 14 on the back surface is not limited to the method of conversion from the n-type diffusion layer to the p- And any conventionally known method can be adopted, and the selection of the manufacturing method is widened.
예를 들어, 도너 원소를 함유하는 유리 분말 대신에 억셉터 원소를 함유하는 유리 분말을 사용하여, n 형 확산층 형성 조성물과 동일하게 하여 구성되는 p 형 확산층 형성 조성물을 실리콘 기판의 이면 (n 형 확산층 형성 조성물을 도포한 면과는 반대측의 면) 에 도포하고, 소성 처리함으로써, 이면에 p+ 형 확산층 (고농도 전계층) (14) 을 형성하는 것이 바람직하다.For example, using a glass powder containing an acceptor element instead of a glass powder containing a donor element, a composition for forming a p-type diffusion layer, which is the same as that for the composition for forming an n-type diffusion layer, applied to the surface of the opposite side) and a surface coating forming composition, and by baking treatment, it is preferable to form the p + -type diffusion layer (high concentration former layer) 14 on the back surface.
또, 후술하는 바와 같이, 이면의 표면 전극 (20) 에 사용하는 재료는 제 13 족 알루미늄에 한정되지 않고, 예를 들어 Ag (은) 나 Cu (구리) 등을 적용할 수 있으며, 이면의 표면 전극 (20) 의 두께도 종래의 것보다 얇게 형성하는 것이 가능해진다.As described later, the material used for the
도 1 (4) 에서는 n 형 확산층 (12) 상에 반사 방지막 (16) 을 형성한다. 반사 방지막 (16) 은 공지된 기술을 적용하여 형성된다. 예를 들어, 반사 방지막 (16) 이 실리콘질화막인 경우에는, SiH4 와 NH3 의 혼합 가스를 원료로 하는 플라스마 CVD 법에 의해 형성한다. 이 때, 수소가 결정 중에 확산되어, 실리콘 원자의 결합에 기여하지 않는 궤도, 즉 댕글링 본드와 수소가 결합하여, 결함을 불활성화 (수소 패시베이션) 한다.In Fig. 1 (4), the antireflection film 16 is formed on the n-
보다 구체적으로는, 상기 혼합 가스 유량비 NH3/SiH4 가 0.05 ∼ 1.0, 반응실의 압력이 0.1 Torr ∼ 2 Torr, 성막시의 온도가 300 ℃ ∼ 550 ℃, 플라스마의 방전을 위한 주파수가 100 ㎑ 이상인 조건하에서 형성된다.More specifically, the mixed gas flow rate ratio NH 3 / SiH 4 is 0.05 to 1.0, the pressure of the reaction chamber is 0.1 Torr to 2 Torr, the temperature at the film formation is 300 ° C. to 550 ° C., the frequency for plasma discharge is 100 kHz Or more.
도 1 (5) 에서는 표면 (수광면) 의 반사 방지막 (16) 상에 표면 전극용 금속 페이스트를 스크린 인쇄법으로 인쇄 도포 건조시켜, 표면 전극 (18) 을 형성한다. 표면 전극용 금속 페이스트는, (1) 금속 입자와 (2) 유리 입자를 필수 성분으로 하며, 필요에 따라 (3) 수지 바인더, (4) 그 밖의 첨가제 등을 함유한다.In Fig. 1 (5), the
이어서, 상기 이면의 고농도 전계층 (14) 상에도 이면 전극 (20) 을 형성한다. 전술한 바와 같이, 본 발명에서는 이면 전극 (20) 의 재질이나 형성 방법은 특별히 한정되지 않는다. 예를 들어, 알루미늄, 은, 또는 구리 등의 금속을 함유하는 이면 전극용 페이스트를 도포하고, 건조시켜, 이면 전극 (20) 을 형성해도 된다. 이 때, 이면에도 모듈 공정에 있어서의 태양 전지 소자간의 접속을 위해서, 일부에 은 전극 형성용 은 페이스트를 형성해도 된다.Then, the
도 1 (6) 에서는 전극을 소성하여 태양 전지 소자를 완성시킨다. 600 ∼ 900 ℃ 의 범위에서 수 초 ∼ 수 분간 소성하면, 표면측에서는 전극용 금속 페이스트에 함유되는 유리 입자에 의해 절연막인 반사 방지막 (16) 이 용융되고, 또한 실리콘 (10) 표면도 일부 용융되어, 페이스트 중의 금속 입자 (예를 들어, 은 입자) 가 실리콘 기판 (10) 과 접촉부를 형성하여 응고된다. 이로써, 형성된 표면 전극 (18) 과 실리콘 기판 (10) 이 도통된다. 이것은 파이어스루라고 칭해지고 있다.In Fig. 1 (6), the electrode is baked to complete the solar cell element. When the firing is performed at a temperature in the range of 600 to 900 DEG C for a few seconds to several minutes, the antireflection film 16, which is an insulating film, is melted by the glass particles contained in the electrode metal paste on the surface side, Metal particles (for example, silver particles) in the paste form a contact portion with the
표면 전극 (18) 의 형상에 대해 설명한다. 표면 전극 (18) 은, 버스 바 전극 (30), 및 그 버스 바 전극 (30) 과 교차하고 있는 핑거 전극 (32) 으로 구성된다. 도 2a 는 표면 전극 (18) 을 버스 바 전극 (30), 및 그 버스 바 전극 (30) 과 교차하고 있는 핑거 전극 (32) 으로 이루어지는 구성으로 한 태양 전지 소자를 표면에서 본 평면도이고, 도 2b 는 도 2a 의 일부를 확대하여 나타내는 사시도이다.The shape of the
이와 같은 표면 전극 (18) 은, 예를 들어, 상기 서술한 금속 페이스트의 스크린 인쇄, 또는 전극 재료의 도금, 고진공 중에 있어서의 전자빔 가열에 의한 전극 재료의 증착 등의 수단에 의해 형성할 수 있다. 버스 바 전극 (30) 과 핑거 전극 (32) 으로 이루어지는 표면 전극 (18) 은 수광면측의 전극으로서 일반적으로 사용되고 있어 주지된 것이며, 수광면측의 버스 바 전극 및 핑거 전극의 공지된 형성 수단을 적용할 수 있다.Such a
상기에서는 표면에 n 형 확산층, 이면에 p+ 형 확산층을 형성하고, 또한 각각의 층 상에 표면 전극 및 이면 전극을 형성한 태양 전지 소자에 대해 설명했는데, 본 발명의 n 형 확산층 형성 조성물을 사용하면 백 컨택트형의 태양 전지 소자를 제조할 수도 있다.In the above description, a solar cell element is described in which an n-type diffusion layer is formed on the surface and a p + -type diffusion layer is formed on the back surface, and surface electrodes and back electrodes are formed on the respective layers. The n-type diffusion layer- A back contact type solar cell device can be manufactured.
백 컨택트형의 태양 전지 소자는 전극을 모두 이면에 형성하여 수광면의 면적을 크게 하는 것이다. 요컨대, 백 컨택트형의 태양 전지 소자에서는 이면에 n 형 확산 부위 및 p+ 형 확산 부위의 양쪽을 형성하여 pn 접합 구조로 할 필요가 있다. 본 발명의 n 형 확산층 형성 조성물은 특정 부위에만 n 형 확산 부위를 형성하는 것이 가능하고, 따라서 백 컨택트형의 태양 전지 소자의 제조에 바람직하게 적용할 수 있다.In the back-contact type solar cell element, electrodes are all formed on the back surface to increase the area of the light receiving surface. That is, in the back-contact type solar cell device, it is necessary to form both the n-type diffusion region and the p + -type diffusion region on the back surface to have a pn junction structure. The n-type diffusion layer forming composition of the present invention can form an n-type diffusion region only at a specific site, and thus can be suitably applied to the production of a back contact type solar cell element.
또한, 일본 특허 출원 2010-100224호의 개시는 그 전체가 참조에 의해 본 명세서에 도입된다.The disclosure of Japanese Patent Application No. 2010-100224 is also incorporated herein by reference in its entirety.
본 명세서에 기재된 모든 문헌, 특허 출원 및 기술 규격은, 개개의 문헌, 특허 출원, 및 기술 규격이 참조에 의해 도입되는 것이 구체적이면서 또한 개개에 기록된 경우와 동일한 정도로, 본 명세서 중에 참조에 의해 도입된다.All publications, patent applications, and technical specifications described in this specification are herein incorporated by reference into the present specification to the same extent as if each individual publication, patent application, and technical specification were specifically and individually indicated to be incorporated by reference. do.
실시예Example
이하, 본 발명의 실시예를 더욱 구체적으로 설명하는데, 본 발명은 이들 실시예에 제한되는 것은 아니다. 또한, 특별히 기술이 없는 한, 약품은 모두 시약을 사용하였다. 또, 「%」는 언급이 없는 한 「질량%」를 의미한다.Hereinafter, the embodiments of the present invention will be described more specifically, but the present invention is not limited to these embodiments. In addition, unless otherwise noted, the reagents were all reagents. "%" Means "% by mass" unless otherwise noted.
[실시예 1][Example 1]
입자 형상이 대략 구상이고, 평균 입자경이 3.5 ㎛, 연화 온도가 490 ℃ 인 P2O5-SiO2 계 유리 (P2O5 함유량 : 10 %) 분말 20 g 과, 에틸셀룰로오스 0.3 g 과, 아세트산2-(2-부톡시에톡시)에틸 7 g 을 자동 유발 혼련 장치를 사용하여 혼합해서 페이스트화하여, n 형 확산층 형성 조성물을 조제하였다.P 2 O 5 -SiO 2 glass (P 2 O 5) glass having an approximately spherical particle shape, an average particle size of 3.5 μm and a softening temperature of 490 ° C. 20 g of the powder, 0.3 g of ethylcellulose and 7 g of 2- (2-butoxyethoxy) ethyl acetate were mixed using an automatic induction kneader to form a paste, thereby obtaining an n-type diffusion layer- Lt; / RTI >
또한, 유리 입자 형상은 (주) 히타치 하이테크놀로지스 제조 TM-1000 형 주사형 전자 현미경을 사용하여 관찰해서 판정하였다. 유리의 평균 입자경은 벡크만·쿨터 (주) 제조 LS 13 320 형 레이저 산란 회절법 입도 분포 측정 장치 (측정 파장 : 632 ㎚) 를 사용하여 산출하였다. 유리의 연화점은 (주) 시마즈 제작소 제조 DTG-60H 형 시차열·열중량 동시 측정 장치를 사용하여 시차열 (DTA) 곡선에 의해 구하였다.In addition, the shape of the glass particles was determined by observation using a scanning electron microscope (TM-1000 type, manufactured by Hitachi High-Technologies Corporation). The average particle diameter of the glass was calculated using a particle size distribution measuring apparatus (measurement wavelength: 632 nm) of the
다음으로, 조제한 페이스트를 스크린 인쇄에 의해 p 형 실리콘 기판 표면에 도포하고, 150 ℃ 의 핫 플레이트 상에서 5 분간 건조시켰다. 계속해서, 1000 ℃ 로 설정한 전기로에서 10 분간 열확산 처리를 실시하고, 그 후 유리층을 제거하기 위해 기판을 불화수소산에 5 분간 침지하여, 유수 세정을 실시하였다. 표면에 약간의 부착물이 있었지만, 걸레로 문지름으로써 용이하게 제거할 수 있었다. 그 후, 건조를 실시하였다.Next, the prepared paste was applied to the surface of the p-type silicon substrate by screen printing and dried on a hot plate at 150 캜 for 5 minutes. Subsequently, thermal diffusion treatment was performed in an electric furnace set at 1000 캜 for 10 minutes, and then the substrate was immersed in hydrofluoric acid for 5 minutes in order to remove the glass layer, and washed with water. Although there was some adherence on the surface, it was easily removed by rubbing with a mop. Thereafter, drying was carried out.
n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 80 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다. 이면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.The sheet resistance of the surface coated with the n-type diffusion layer-forming composition was 80? / ?, and P (phosphorus) was diffused to form an n-type diffusion layer. The sheet resistance of the back surface was not more than 1000000? / Square, and it was judged that the n-type diffusion layer was not formed substantially.
또한, 시트 저항은 미츠비시 화학 (주) 제조 Loresta-EP MCP-T360 형 저저항률계를 사용하여 4 탐침법에 의해 측정하였다.The sheet resistance was measured by a 4-probe method using a Loresta-EP MCP-T360 low resistivity meter manufactured by Mitsubishi Chemical Corporation.
[실시예 2][Example 2]
열확산 처리 시간을 20 분으로 한 것 이외에는 실시예 1 과 마찬가지로 n 형 확산층 형성을 실시하였다. n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 62 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다.An n-type diffusion layer was formed in the same manner as in Example 1 except that the thermal diffusion treatment time was 20 minutes. The sheet resistance of the surface coated with the n-type diffusion layer forming composition was 62 Ω / □, and P (phosphorus) was diffused to form an n-type diffusion layer.
이면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.The sheet resistance of the back surface was not more than 1000000? / Square, and it was judged that the n-type diffusion layer was not formed substantially.
[실시예 3][Example 3]
열확산 처리 시간을 30 분으로 한 것 이외에는 실시예 1 과 마찬가지로 n 형 확산층 형성을 실시하였다. n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 54 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다.An n-type diffusion layer was formed in the same manner as in Example 1 except that the thermal diffusion treatment time was 30 minutes. The sheet resistance of the surface coated with the n-type diffusion layer forming composition was 54 Ω / □, and P (phosphorus) was diffused to form an n-type diffusion layer.
한편, 이면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.On the other hand, it was judged that the sheet resistance of the back surface was not more than 1000000? / Square and the n-type diffusion layer was not formed substantially.
[실시예 4][Example 4]
유리 분말을 입자 형상이 대략 구상이고, 평균 입자경이 3.5 ㎛, 연화 온도가 543 ℃ 인 P2O5-SiO2 계 유리 분말 (P2O5 함유량 : 30 %) 로 대신한 것 이외에는 실시예 1 과 동일하게 하여 n 형 확산층 형성 조성물을 조제하고, 이것을 사용하여 n 형 확산층 형성을 실시하였다. n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 55 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다.Except that the glass powder was replaced with a P 2 O 5 -SiO 2 glass powder (P 2 O 5 content: 30%) having an approximately spherical shape in particle shape and an average particle size of 3.5 μm and a softening temperature of 543 ° C. Example 1 , An n-type diffusion layer forming composition was prepared and an n-type diffusion layer was formed therefrom. The sheet resistance of the surface coated with the n-type diffusion layer forming composition was 55 Ω / □, and P (phosphorus) was diffused to form an n-type diffusion layer.
한편, 이면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.
On the other hand, it was judged that the sheet resistance of the back surface was not more than 1000000? / Square and the n-type diffusion layer was not formed substantially.
[실시예 5][Example 5]
유리 분말을 입자 형상이 대략 구상이고, 평균 입자경이 3.5 ㎛, 연화 온도가 587 ℃ 인 P2O5-SiO2 계 유리 분말 (P2O5 함유량 : 50 %) 로 대신한 것 이외에는 실시예 1 과 동일하게 하여 n 형 확산층 형성 조성물을 조제하고, 이것을 사용하여 n 형 확산층 형성을 실시하였다. n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 43 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다.The glass powder was made into P 2 O 5 -SiO 2 having an approximately spherical particle shape, an average particle diameter of 3.5 μm and a softening temperature of 587 ° C -Type glass powder (P 2 O 5 content: 50%) was used in place of the glass powder (P 2 O 5 content: 50%), and an n-type diffusion layer was formed thereon. The sheet resistance of the surface coated with the n-type diffusion layer forming composition was 43 Ω / □, and P (phosphorus) was diffused to form an n-type diffusion layer.
한편, 이면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.On the other hand, it was judged that the sheet resistance of the back surface was not more than 1000000? / Square and the n-type diffusion layer was not formed substantially.
[실시예 6][Example 6]
유리 분말을 입자 형상이 대략 구상이고, 평균 입자경이 3.5 ㎛, 연화 온도가 612 ℃ 인 P2O5-SiO2 계 유리 분말 (P2O5 함유량 : 60 %) 로 대신한 것 이외에는 실시예 1 과 동일하게 하여 n 형 확산층 형성 조성물을 조제하고, 이것을 사용하여 n 형 확산층 형성을 실시하였다. n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 40 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다.The glass powder was made into P 2 O 5 -SiO 2 having an approximately spherical particle shape, an average particle diameter of 3.5 μm and a softening temperature of 612 ° C. Type glass powder (P 2 O 5 content: 60%) was used in place of the glass powder (P 2 O 5 content: 60%), and an n-type diffusion layer was formed thereon. The sheet resistance of the surface coated with the n-type diffusion layer-forming composition was 40? / ?, and P (phosphorus) was diffused to form an n-type diffusion layer.
한편, 이면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.On the other hand, it was judged that the sheet resistance of the back surface was not more than 1000000? / Square and the n-type diffusion layer was not formed substantially.
[실시예 7]
[Example 7]
유리 분말을 입자 형상이 대략 구상이고, 평균 입자경이 3.5 ㎛, 연화 온도가 633 ℃ 인 P2O5-SiO2 계 유리 분말 (P2O5 함유량 : 70 %) 로 대신한 것 이외에는 실시예 1 과 동일하게 하여 n 형 확산층 형성 조성물을 조제하고, 이것을 사용하여 n 형 확산층 형성을 실시하였다. n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 41 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다.The glass powder was mixed with P 2 O 5 -SiO 2 having an approximately spherical particle shape, an average particle diameter of 3.5 μm and a softening temperature of 633 ° C Type glass powder (P 2 O 5 content: 70%) was used in place of the glass powder (P 2 O 5 content: 70%), and an n-type diffusion layer was formed thereon. The sheet resistance of the surface coated with the n-type diffusion layer forming composition was 41? / ?, and P (phosphorus) was diffused to form the n-type diffusion layer.
한편, 이면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.On the other hand, it was judged that the sheet resistance of the back surface was not more than 1000000? / Square and the n-type diffusion layer was not formed substantially.
[실시예 8][Example 8]
유리 분말을 입자 형상이 대략 구상이고, 평균 입자경이 3.5 ㎛, 연화 온도가 495 ℃ 인 P2O5-ZnO 계 유리 분말 (P2O5 함유량 : 10 %) 로 대신한 것 이외에는 실시예 1 과 동일하게 하여 n 형 확산층 형성 조성물을 조제하고, 이것을 사용하여 n 형 확산층 형성을 실시하였다. n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 67 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다.Example 1 was repeated except that the glass powder was replaced with a P 2 O 5 -ZnO glass powder (P 2 O 5 content: 10%) having a substantially spherical particle shape and an average particle size of 3.5 μm and a softening temperature of 495 ° C. In the same manner, an n-type diffusion layer forming composition was prepared, and an n-type diffusion layer was formed using the same. The sheet resistance of the surface coated with the n-type diffusion layer forming composition was 67 Ω / □, and P (phosphorus) was diffused to form an n-type diffusion layer.
한편, 이면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.On the other hand, it was judged that the sheet resistance of the back surface was not more than 1000000? / Square and the n-type diffusion layer was not formed substantially.
[실시예 9][Example 9]
유리 분말을 입자 형상이 대략 구상이고, 평균 입자경이 3.5 ㎛, 연화 온도가 591 ℃ 인 P2O5-CaO 계 유리 분말 (P2O5 함유량 : 40 %) 로 대신한 것 이외에는 실시예 1 과 동일하게 하여 n 형 확산층 형성 조성물을 조제하고, 이것을 사용하여 n 형 확산층 형성을 실시하였다. n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 22 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다.Example 1 was repeated except that the glass powder was replaced with a P 2 O 5 -CaO-based glass powder (P 2 O 5 content: 40%) having a substantially spherical particle shape and an average particle size of 3.5 μm and a softening temperature of 591 ° C. In the same manner, an n-type diffusion layer forming composition was prepared, and an n-type diffusion layer was formed using the same. The sheet resistance of the surface coated with the n-type diffusion layer forming composition was 22? / ?, and P (phosphorus) was diffused to form an n-type diffusion layer.
한편, 이면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.On the other hand, it was judged that the sheet resistance of the back surface was not more than 1000000? / Square and the n-type diffusion layer was not formed substantially.
[실시예 10][Example 10]
입자 형상이 대략 구상이고, 평균 입자경이 3.5 ㎛, 연화 온도가 527 ℃ 인 P2O5-SiO2 계 유리 (P2O5 함유량 : 10 %) 분말 19.7 g 과, Ag 를 0.3 g 과, 에틸셀룰로오스 0.3 g 과, 아세트산2-(2-부톡시에톡시)에틸 7 g 을 자동 유발 혼련 장치를 사용하여 혼합해서 페이스트화하여, n 형 확산층 형성 조성물을 조제하였다. 그 후, 실시예 1 과 동일한 조작을 실시하였다.19.7 g of a P 2 O 5 -SiO 2 glass (P 2 O 5 content: 10%) powder having an average particle size of 3.5 μm and a softening temperature of 527 ° C., 0.3 g of Ag, 0.3 g of cellulose and 7 g of 2- (2-butoxyethoxy) ethyl acetate were mixed using an automatic induced kneading apparatus to form a paste, thereby preparing an n-type diffusion layer forming composition. Thereafter, the same operation as in Example 1 was carried out.
그 결과, 세정 후의 기판에는 유리의 부착물이 없고, 용이하게 제거되어 있었다. 또, 표면의 시트 저항은 72 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다.As a result, the substrate after cleaning had no adherence to glass and was easily removed. The sheet resistance of the surface was 72? / ?, and P (phosphorous) was diffused to form the n-type diffusion layer.
한편, 이면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.On the other hand, it was judged that the sheet resistance of the back surface was not more than 1000000? / Square and the n-type diffusion layer was not formed substantially.
[비교예 1][Comparative Example 1]
유리 분말을 입자 형상이 대략 구상이고, 평균 입자경이 3.5 ㎛, 연화 온도가 467 ℃ 인 P2O5-SiO2 계 유리 분말 (P2O5 함유량 : 0.5 %) 로 대신한 것 이외에는 실시예 1 과 동일하게 하여 n 형 확산층 형성 조성물을 조제하고, 이것을 사용하여 실시예 1 과 동일하게 해서 열확산 처리를 실시하였다.Except that the glass powder was replaced with a P 2 O 5 -SiO 2 glass powder (P 2 O 5 content: 0.5%) having a substantially spherical particle shape and an average particle size of 3.5 μm and a softening temperature of 467 ° C. , An n-type diffusion layer forming composition was prepared, and thermal diffusion treatment was carried out in the same manner as in Example 1.
n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 1000000 Ω/□ 이상으로 측정 불능이며, n 형 확산층은 실질적으로 형성되어 있지 않다고 판단되었다.it was judged that the sheet resistance of the surface coated with the n-type diffusion layer forming composition was not measurable at 1000000? / square or more and the n-type diffusion layer was not formed substantially.
[비교예 2][Comparative Example 2]
유리 분말을 입자 형상이 대략 구상이고, 평균 입자경이 3.5 ㎛, 연화 온도가 711 ℃ 인 P2O5-SiO2 계 유리 분말 (P2O5 함유량 : 85 %) 로 대신한 것 이외에는 실시예 1 과 동일하게 하여 n 형 확산층 형성 조성물을 조제하고, 이것을 사용하여 실시예 1 과 동일하게 해서 열확산 처리를 실시하였다.Except that the glass powder was replaced with a P 2 O 5 -SiO 2 glass powder (P 2 O 5 content: 85%) having a substantially spherical particle shape and an average particle size of 3.5 μm and a softening temperature of 711 ° C. Instead of Example 1 , An n-type diffusion layer forming composition was prepared, and thermal diffusion treatment was carried out in the same manner as in Example 1.
n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 36 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다.The sheet resistance of the surface coated with the n-type diffusion layer forming composition was 36? / ?, and P (phosphorus) was diffused to form an n-type diffusion layer.
그러나, 이면의 시트 저항이 255 Ω/□ 로, 이면에도 n 형 확산층이 형성되어 있었다.However, the sheet resistance of the back surface was 255? / ?, and the n-type diffusion layer was also formed on the back surface.
[비교예 3][Comparative Example 3]
인산이수소암모늄 (NH4H2PO4) 분말 20 g 과, 에틸셀룰로오스 3 g, 아세트산2-(2-부톡시에톡시)에틸 7 g 을 혼합해서 페이스트화하여, n 형 확산층 형성 조성물을 조제하였다.Ammonium dihydrogen phosphate (NH 4 H 2 PO 4) powder, 20 g of ethyl cellulose 3 g,
다음으로, 조제한 페이스트를 스크린 인쇄에 의해 p 형 실리콘 기판 표면에 도포하고, 150 ℃ 의 핫 플레이트 상에서 5 분간 건조시켰다. 계속해서, 1000 ℃ 로 설정한 전기로에서 10 분간 열확산 처리를 실시하고, 그 후 유리층을 제거하기 위해 기판을 불화수소산에 5 분간 침지하여, 유수 세정, 건조를 실시하였다.Next, the prepared paste was applied to the surface of the p-type silicon substrate by screen printing and dried on a hot plate at 150 캜 for 5 minutes. Subsequently, thermal diffusion treatment was performed in an electric furnace set at 1000 캜 for 10 minutes, and then the substrate was immersed in hydrofluoric acid for 5 minutes to remove the glass layer, followed by washing with water and drying.
n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 14 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다. 그러나, 이면의 시트 저항은 50 Ω/□ 로, 이면에도 n 형 확산층이 형성되어 있었다.The sheet resistance of the surface coated with the n-type diffusion layer forming composition was 14 Ω / □, and P (phosphorus) was diffused to form an n-type diffusion layer. However, the sheet resistance on the back side was 50? / ?, and the n-type diffusion layer was also formed on the back side.
[비교예 4][Comparative Example 4]
인산이수소암모늄 (NH4H2PO4) 분말 1 g 과, 순수 7 g, 폴리비닐알코올 0.7 g, 이소프로필알코올 1.5 g 을 혼합해서 용액을 조제하여, n 형 확산층 형성 조성물을 조제하였다.1 g of ammonium dihydrogenphosphate (NH 4 H 2 PO 4 ) powder, 7 g of pure water, 0.7 g of polyvinyl alcohol and 1.5 g of isopropyl alcohol were mixed to prepare a solution to prepare an n-type diffusion layer forming composition.
다음으로, 조제한 용액을 스핀 코터 (2000 rpm, 30 sec) 에 의해 p 형 실리콘 기판 표면에 도포하고, 150 ℃ 의 핫 플레이트 상에서 5 분간 건조시켰다. 계속해서, 1000 ℃ 로 설정한 전기로에서 10 분간 열확산 처리를 실시하고, 그 후 유리층을 제거하기 위해 기판을 불화수소산에 5 분간 침지하여, 유수 세정, 건조를 실시하였다.Next, the prepared solution was coated on the surface of the p-type silicon substrate by a spin coater (2000 rpm, 30 sec) and dried on a hot plate at 150 캜 for 5 minutes. Subsequently, thermal diffusion treatment was performed in an electric furnace set at 1000 캜 for 10 minutes, and then the substrate was immersed in hydrofluoric acid for 5 minutes to remove the glass layer, followed by washing with water and drying.
n 형 확산층 형성 조성물을 도포한 측의 표면의 시트 저항은 10 Ω/□ 이며, P (인) 가 확산되어 n 형 확산층이 형성되어 있었다. 그러나, 이면의 시트 저항은 100 Ω/□ 로, 이면에도 n 형 확산층이 형성되어 있었다.The sheet resistance of the surface coated with the n-type diffusion layer forming composition was 10? / ?, and P (phosphorus) was diffused to form an n-type diffusion layer. However, the sheet resistance on the back side was 100? / ?, and the n-type diffusion layer was also formed on the back side.
10 p 형 반도체 기판
12 n 형 확산층
14 고농도 전계층
16 반사 방지막
18 표면 전극
20 이면 전극 (전극층)
30 버스 바 전극
32 핑거 전극10 p-type semiconductor substrate
12 n-type diffusion layer
14 High concentration layer
16 antireflection film
18 surface electrode
20, the electrode (electrode layer)
30 bus bar electrode
32 finger electrodes
Claims (7)
상기 도너 원소가 P (인) 및 Sb (안티몬) 에서 선택되는 적어도 1 종인, n 형 확산층 형성 조성물.The method according to claim 1,
Wherein the donor element is at least one selected from P (phosphorus) and Sb (antimony).
상기 도너 원소를 함유하는 유리 분말이 P2O3, P2O5 및 Sb2O3 에서 선택되는 적어도 1 종의 도너 원소 함유 물질과, SiO2, K2O, Na2O, Li2O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO2 및 MoO3 에서 선택되는 적어도 1 종의 유리 성분 물질을 함유하는, n 형 확산층 형성 조성물.3. The method according to claim 1 or 2,
Wherein the donor element-containing glass powder comprises at least one donor element-containing substance selected from P 2 O 3 , P 2 O 5 and Sb 2 O 3 , and at least one donor element-containing substance selected from SiO 2 , K 2 O, Na 2 O, Li 2 O , At least one kind of glass component material selected from BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2 and MoO 3 .
또한, Ag (은), Si (규소), Cu (구리), Fe (철), Zn (아연) 및 Mn (망간) 에서 선택되는 적어도 1 종의 금속을 함유하는, n 형 확산층 형성 조성물.4. The method according to any one of claims 1 to 3,
The n-type diffusion layer-forming composition further contains at least one metal selected from Ag (silver), Si (silicon), Cu (copper), Fe (iron), Zn (zinc), and Mn (manganese).
상기 금속이 Ag (은) 인, n 형 확산층 형성 조성물.5. The method of claim 4,
Wherein the metal is Ag (silver).
열확산 처리를 실시하는 공정을 갖는, n 형 확산층의 제조 방법.A method for manufacturing a semiconductor device, comprising the steps of applying the n-type diffusion layer forming composition according to any one of claims 1 to 5,
And a step of performing a thermal diffusion process.
열확산 처리를 실시하여 n 형 확산층을 형성하는 공정과,
형성된 상기 n 형 확산층 상에 전극을 형성하는 공정을 갖는, 태양 전지 소자의 제조 방법.A method for manufacturing a semiconductor device, comprising the steps of: applying an n-type diffusion layer-forming composition according to any one of claims 1 to 5 on a semiconductor substrate;
A step of forming an n-type diffusion layer by performing a thermal diffusion process,
And forming an electrode on the formed n-type diffusion layer.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2010-100224 | 2010-04-23 | ||
JP2010100224 | 2010-04-23 | ||
PCT/JP2011/059971 WO2011132779A1 (en) | 2010-04-23 | 2011-04-22 | n-TYPE DIFFUSION LAYER-FORMING COMPOSITION, n-TYPE DIFFUSION LAYER PRODUCTION METHOD AND SOLAR CELL COMPONENT PRODUCTION METHOD |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20127030147A Division KR101484833B1 (en) | 2010-04-23 | 2011-04-22 | n-TYPE DIFFUSION LAYER-FORMING COMPOSITION, n-TYPE DIFFUSION LAYER PRODUCTION METHOD AND SOLAR CELL COMPONENT PRODUCTION METHOD |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20140129375A true KR20140129375A (en) | 2014-11-06 |
Family
ID=44834293
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20127030147A KR101484833B1 (en) | 2010-04-23 | 2011-04-22 | n-TYPE DIFFUSION LAYER-FORMING COMPOSITION, n-TYPE DIFFUSION LAYER PRODUCTION METHOD AND SOLAR CELL COMPONENT PRODUCTION METHOD |
KR1020147028552A KR20140129375A (en) | 2010-04-23 | 2011-04-22 | n-TYPE DIFFUSION LAYER-FORMING COMPOSITION, n-TYPE DIFFUSION LAYER PRODUCTION METHOD AND SOLAR CELL COMPONENT PRODUCTION METHOD |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20127030147A KR101484833B1 (en) | 2010-04-23 | 2011-04-22 | n-TYPE DIFFUSION LAYER-FORMING COMPOSITION, n-TYPE DIFFUSION LAYER PRODUCTION METHOD AND SOLAR CELL COMPONENT PRODUCTION METHOD |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP5626339B2 (en) |
KR (2) | KR101484833B1 (en) |
CN (1) | CN102844841B (en) |
TW (2) | TW201508821A (en) |
WO (1) | WO2011132779A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103839787A (en) * | 2011-07-05 | 2014-06-04 | 日立化成株式会社 | Composition for forming n-type diffusion layer, method for producing n-type diffusion layer, and method for producing solar cell element |
WO2013129002A1 (en) * | 2012-02-29 | 2013-09-06 | 日立化成株式会社 | COMPOSITION FOR FORMING n-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING n-TYPE DIFFUSION LAYER, AND METHOD FOR MANUFACTURING SOLAR CELL |
KR20140092489A (en) * | 2012-12-29 | 2014-07-24 | 제일모직주식회사 | Composition for forming solar cell electrode and electrode prepared using the same |
JP2014179360A (en) * | 2013-03-13 | 2014-09-25 | Hitachi Chemical Co Ltd | Composition for n-type diffusion layer formation, method for manufacturing semiconductor substrate having n-type diffusion layer, and method for manufacturing solar battery device |
JP6379461B2 (en) * | 2013-09-02 | 2018-08-29 | 日立化成株式会社 | Method for manufacturing silicon substrate having p-type diffusion layer, method for manufacturing solar cell element, and solar cell element |
CN107146757A (en) * | 2016-08-26 | 2017-09-08 | 扬州杰盈汽车芯片有限公司 | A kind of attached phosphorus technique of atomizing wafer |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL99619C (en) * | 1955-06-28 | |||
US4800175A (en) * | 1987-05-29 | 1989-01-24 | Owens-Illinois Television Products Inc. | Phosphorous planar dopant source for low temperature applications |
US4891331A (en) * | 1988-01-21 | 1990-01-02 | Oi-Neg Tv Products, Inc. | Method for doping silicon wafers using Al2 O3 /P2 O5 composition |
JPH06105696B2 (en) * | 1988-12-15 | 1994-12-21 | シャープ株式会社 | Method for manufacturing semiconductor device |
JPH02177569A (en) * | 1988-12-28 | 1990-07-10 | Sharp Corp | Manufacture of solar cell |
JPH04158514A (en) * | 1990-10-22 | 1992-06-01 | Sumitomo Chem Co Ltd | Impurity diffusion to semiconductor substrate |
JPH04174517A (en) * | 1990-11-07 | 1992-06-22 | Canon Inc | Manufacture of diamond semiconductor |
JP3380516B2 (en) * | 1991-08-26 | 2003-02-24 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
DE19910816A1 (en) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Doping pastes for producing p, p + and n, n + regions in semiconductors |
JP4726354B2 (en) * | 2001-08-22 | 2011-07-20 | 東洋アルミニウム株式会社 | Paste composition and solar cell using the same |
JP4481869B2 (en) * | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | SOLAR CELL MANUFACTURING METHOD, SOLAR CELL, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
US8632702B2 (en) * | 2007-01-03 | 2014-01-21 | Nanogram Corporation | Silicon/germanium particle inks, doped particles, printing and processes for semiconductor applications |
US20090092745A1 (en) * | 2007-10-05 | 2009-04-09 | Luca Pavani | Dopant material for manufacturing solar cells |
WO2009060761A1 (en) * | 2007-11-09 | 2009-05-14 | Nippon Electric Glass Co., Ltd. | Dopant host and process for producing the dopant host |
JP2009117729A (en) * | 2007-11-09 | 2009-05-28 | Nippon Electric Glass Co Ltd | Dopant host and method for manufacturing the dopant host |
JP5522900B2 (en) * | 2008-02-22 | 2014-06-18 | 東京応化工業株式会社 | Electrode forming conductive composition and method for forming solar cell |
-
2011
- 2011-04-22 TW TW103135127A patent/TW201508821A/en unknown
- 2011-04-22 WO PCT/JP2011/059971 patent/WO2011132779A1/en active Application Filing
- 2011-04-22 KR KR20127030147A patent/KR101484833B1/en not_active IP Right Cessation
- 2011-04-22 CN CN201180018421.1A patent/CN102844841B/en not_active Expired - Fee Related
- 2011-04-22 JP JP2012511721A patent/JP5626339B2/en not_active Expired - Fee Related
- 2011-04-22 TW TW100114097A patent/TWI499070B/en not_active IP Right Cessation
- 2011-04-22 KR KR1020147028552A patent/KR20140129375A/en not_active Application Discontinuation
-
2014
- 2014-03-04 JP JP2014041961A patent/JP5958485B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP5958485B2 (en) | 2016-08-02 |
KR20130066614A (en) | 2013-06-20 |
JPWO2011132779A1 (en) | 2013-07-18 |
KR101484833B1 (en) | 2015-01-21 |
TW201201400A (en) | 2012-01-01 |
CN102844841B (en) | 2016-06-15 |
JP5626339B2 (en) | 2014-11-19 |
JP2014170939A (en) | 2014-09-18 |
CN102844841A (en) | 2012-12-26 |
TWI499070B (en) | 2015-09-01 |
TW201508821A (en) | 2015-03-01 |
WO2011132779A1 (en) | 2011-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20170086001A (en) | Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell | |
KR101835897B1 (en) | COMPOSITION THAT FORMS n-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING n-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR CELL ELEMENT | |
KR101719885B1 (en) | Semiconductor substrate, manufacturing method therefor, solar-cell element, and solar cell | |
KR20170045744A (en) | Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell | |
US20140060385A1 (en) | Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell | |
KR101484833B1 (en) | n-TYPE DIFFUSION LAYER-FORMING COMPOSITION, n-TYPE DIFFUSION LAYER PRODUCTION METHOD AND SOLAR CELL COMPONENT PRODUCTION METHOD | |
WO2011162394A1 (en) | IMPURITIES DIFFUSION LAYER FORMING COMPOSITION, n-TYPE DIFFUSION LAYER FORMING COMPOSITION, METHOD FOR MANUFACTURING n-TYPE DIFFUSION LAYER, p-TYPE DIFFUSION LAYER FORMING COMPOSITION, METHOD FOR MANUFACTURING p-TYPE DIFFUSION LAYER, AND METHOD FOR MANUFACTURING SOLAR CELL ELEMENTS | |
KR101541660B1 (en) | Composition that forms n-type diffusion layer, n-type diffusion layer manufacturing method and solar cell element manufacturing method | |
WO2012005253A1 (en) | Composition for forming impurity diffusion layer, process for producing impurity diffusion layer, and process for producing solar cell element | |
JP5541358B2 (en) | N-type diffusion layer forming composition, n-type diffusion layer manufacturing method, and solar cell element manufacturing method | |
JP5176158B1 (en) | N-type diffusion layer forming composition, method for producing n-type diffusion layer, and method for producing solar cell element | |
JP5842431B2 (en) | Method for producing n-type diffusion layer and method for producing solar cell element | |
JP5333564B2 (en) | Method for manufacturing solar battery cell | |
WO2011132782A1 (en) | p-TYPE DIFFUSION LAYER FORMING COMPOSITION, METHOD OF PRODUCING p-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING SOLAR CELL ELEMENT | |
WO2011132780A1 (en) | p-TYPE DIFFUSION LAYER-FORMING COMPOSITION, p-TYPE DIFFUSION LAYER PRODUCTION METHOD AND SOLAR CELL COMPONENT PRODUCTION METHOD | |
JP2013026477A (en) | N-type diffusion layer formation composition, manufacturing method of n-type diffusion layer, and manufacturing method of solar cell element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |