KR20140123575A - 전자 디바이스들의 3차원 패키징을 위한 방법 - Google Patents

전자 디바이스들의 3차원 패키징을 위한 방법 Download PDF

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Publication number
KR20140123575A
KR20140123575A KR1020147025016A KR20147025016A KR20140123575A KR 20140123575 A KR20140123575 A KR 20140123575A KR 1020147025016 A KR1020147025016 A KR 1020147025016A KR 20147025016 A KR20147025016 A KR 20147025016A KR 20140123575 A KR20140123575 A KR 20140123575A
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KR
South Korea
Prior art keywords
interposer
manufacturing
laminar
laminator
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020147025016A
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English (en)
Korean (ko)
Inventor
벤카테산 머랄리
아르빈드 차리
고팔 프라부
Original Assignee
지티에이티 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 지티에이티 코포레이션 filed Critical 지티에이티 코포레이션
Publication of KR20140123575A publication Critical patent/KR20140123575A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
KR1020147025016A 2012-02-08 2013-02-05 전자 디바이스들의 3차원 패키징을 위한 방법 Withdrawn KR20140123575A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261596696P 2012-02-08 2012-02-08
US61/596,696 2012-02-08
US13/490,460 2012-06-07
US13/490,460 US8629061B2 (en) 2012-02-08 2012-06-07 Method for three-dimensional packaging of electronic devices
PCT/US2013/024685 WO2013119514A1 (en) 2012-02-08 2013-02-05 Method for three-dimensional packaging of electronic devices

Publications (1)

Publication Number Publication Date
KR20140123575A true KR20140123575A (ko) 2014-10-22

Family

ID=48903255

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147025016A Withdrawn KR20140123575A (ko) 2012-02-08 2013-02-05 전자 디바이스들의 3차원 패키징을 위한 방법

Country Status (6)

Country Link
US (1) US8629061B2 (enExample)
EP (1) EP2812918A4 (enExample)
JP (1) JP2015508234A (enExample)
KR (1) KR20140123575A (enExample)
TW (1) TW201336041A (enExample)
WO (1) WO2013119514A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9576868B2 (en) * 2012-07-30 2017-02-21 General Electric Company Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices
US8916038B2 (en) * 2013-03-13 2014-12-23 Gtat Corporation Free-standing metallic article for semiconductors
US8936709B2 (en) 2013-03-13 2015-01-20 Gtat Corporation Adaptable free-standing metallic article for semiconductors
TWI594380B (zh) 2015-05-21 2017-08-01 穩懋半導體股份有限公司 封裝結構及三維封裝結構
WO2019185846A1 (en) * 2018-03-29 2019-10-03 Koninklijke Philips N.V. X-ray radiation detector with a porous silicon interposer

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5236862A (en) 1992-12-03 1993-08-17 Motorola, Inc. Method of forming oxide isolation
US6544862B1 (en) 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
JP3904484B2 (ja) * 2002-06-19 2007-04-11 新光電気工業株式会社 シリコン基板のスルーホールプラギング方法
JP2006351935A (ja) * 2005-06-17 2006-12-28 Shinko Electric Ind Co Ltd 半導体チップ実装基板及びそれを用いた半導体装置
US7713835B2 (en) 2006-10-06 2010-05-11 Brewer Science Inc. Thermally decomposable spin-on bonding compositions for temporary wafer bonding
US20080284037A1 (en) * 2007-05-15 2008-11-20 Andry Paul S Apparatus and Methods for Constructing Semiconductor Chip Packages with Silicon Space Transformer Carriers
US7825517B2 (en) 2007-07-16 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for packaging semiconductor dies having through-silicon vias
US8143511B2 (en) 2007-09-13 2012-03-27 Silicon China (Hk) Limited Texture process and structure for manufacture of composite photovoltaic device substrates
US8338209B2 (en) 2008-08-10 2012-12-25 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having a rear junction and method of making
US8097525B2 (en) 2008-08-29 2012-01-17 International Business Machines Corporation Vertical through-silicon via for a semiconductor structure
GB0817831D0 (en) 2008-09-30 2008-11-05 Cambridge Silicon Radio Ltd Improved packaging technology
US8049327B2 (en) 2009-01-05 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Through-silicon via with scalloped sidewalls
US7964431B2 (en) 2009-03-19 2011-06-21 Twin Creeks Technologies, Inc. Method to make electrical contact to a bonded face of a photovoltaic cell
US8395191B2 (en) * 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
KR101604607B1 (ko) 2009-10-26 2016-03-18 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
WO2012061304A1 (en) 2010-11-02 2012-05-10 Georgia Tech Research Corporation Ultra-thin interposer assemblies with through vias

Also Published As

Publication number Publication date
JP2015508234A (ja) 2015-03-16
EP2812918A1 (en) 2014-12-17
WO2013119514A1 (en) 2013-08-15
EP2812918A4 (en) 2015-09-30
US8629061B2 (en) 2014-01-14
US20130203251A1 (en) 2013-08-08
TW201336041A (zh) 2013-09-01

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Date Code Title Description
PA0105 International application

Patent event date: 20140904

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid