KR20140053101A - 비스-금속샌드위치 화합물에 의한 유기 반도체의 n-도핑 - Google Patents

비스-금속샌드위치 화합물에 의한 유기 반도체의 n-도핑 Download PDF

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KR20140053101A
KR20140053101A KR1020147001032A KR20147001032A KR20140053101A KR 20140053101 A KR20140053101 A KR 20140053101A KR 1020147001032 A KR1020147001032 A KR 1020147001032A KR 20147001032 A KR20147001032 A KR 20147001032A KR 20140053101 A KR20140053101 A KR 20140053101A
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South Korea
Prior art keywords
organic semiconductor
metal sandwich
compound
doped
bis
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English (en)
Korean (ko)
Inventor
스티븐 바로우
야빙 치
앙투안 칸
세쓰 마르더
상복 김
스와갓 케이. 하파트라
송 구아
Original Assignee
조지아 테크 리서치 코오포레이션
더 트러스티스 오브 프린세톤 유니버시티
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Publication of KR20140053101A publication Critical patent/KR20140053101A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/361—Polynuclear complexes, i.e. complexes comprising two or more metal centers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147001032A 2011-06-14 2012-06-13 비스-금속샌드위치 화합물에 의한 유기 반도체의 n-도핑 Withdrawn KR20140053101A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161496667P 2011-06-14 2011-06-14
US61/496,667 2011-06-14
PCT/US2012/042287 WO2013055410A1 (en) 2011-06-14 2012-06-13 N-doping of organic semiconductors by bis-metallosandwich compounds

Publications (1)

Publication Number Publication Date
KR20140053101A true KR20140053101A (ko) 2014-05-07

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KR1020147001032A Withdrawn KR20140053101A (ko) 2011-06-14 2012-06-13 비스-금속샌드위치 화합물에 의한 유기 반도체의 n-도핑

Country Status (7)

Country Link
US (1) US9231219B2 (cg-RX-API-DMAC7.html)
EP (1) EP2721658A1 (cg-RX-API-DMAC7.html)
JP (1) JP6129826B2 (cg-RX-API-DMAC7.html)
KR (1) KR20140053101A (cg-RX-API-DMAC7.html)
AU (1) AU2012321307B2 (cg-RX-API-DMAC7.html)
IN (1) IN2014DN00183A (cg-RX-API-DMAC7.html)
WO (1) WO2013055410A1 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017059337A1 (en) * 2015-10-02 2017-04-06 Georgetown University High-resolution in situ electrochemical nmr with interdigitated electrodes
WO2020130934A1 (en) * 2018-12-21 2020-06-25 National University Of Singapore N-doped electrically conductive organic materials
JP7409215B2 (ja) * 2020-04-28 2024-01-09 三菱ケミカル株式会社 光電変換素子及び発電デバイス

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10347856B8 (de) 2003-10-10 2006-10-19 Colorado State University Research Foundation, Fort Collins Halbleiterdotierung
JP2007012359A (ja) 2005-06-29 2007-01-18 Hitachi Displays Ltd 有機ｅｌ表示装置
JP4928098B2 (ja) 2005-08-03 2012-05-09 セイコーエプソン株式会社 強誘電体キャパシタの製造方法
US7981328B2 (en) * 2006-06-22 2011-07-19 Georgia Tech Research Corporation N-type doping of an electron transport material and methods of use thereof

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Publication number Publication date
WO2013055410A1 (en) 2013-04-18
US9231219B2 (en) 2016-01-05
JP6129826B2 (ja) 2017-05-17
IN2014DN00183A (cg-RX-API-DMAC7.html) 2015-06-05
AU2012321307B2 (en) 2014-09-18
US20140302635A1 (en) 2014-10-09
JP2014527281A (ja) 2014-10-09
WO2013055410A9 (en) 2013-07-11
EP2721658A1 (en) 2014-04-23
AU2012321307A1 (en) 2014-01-30

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PA0105 International application

Patent event date: 20140114

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid