JP6129826B2 - ビス−金属サンドイッチ化合物による有機半導体のｎ−ドーピング - Google Patents

ビス−金属サンドイッチ化合物による有機半導体のｎ−ドーピング Download PDF

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JP6129826B2
JP6129826B2 JP2014515963A JP2014515963A JP6129826B2 JP 6129826 B2 JP6129826 B2 JP 6129826B2 JP 2014515963 A JP2014515963 A JP 2014515963A JP 2014515963 A JP2014515963 A JP 2014515963A JP 6129826 B2 JP6129826 B2 JP 6129826B2
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organic semiconductor
compound
metal sandwich
bis
doped
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Japanese (ja)
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JP2014527281A5 (cg-RX-API-DMAC7.html
JP2014527281A (ja
Inventor
バーロウ，ステファン
チー，ヤビン
カーン，アントワーヌ
マーダー，セス
ボク キム，サン
ボク キム，サン
ケー． モハパトラ，スワガット
ケー． モハパトラ，スワガット
グオ，ソン
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Georgia Tech Research Corp
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Georgia Tech Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/361—Polynuclear complexes, i.e. complexes comprising two or more metal centers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2014515963A 2011-06-14 2012-06-13 ビス−金属サンドイッチ化合物による有機半導体のｎ−ドーピング Active JP6129826B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161496667P 2011-06-14 2011-06-14
US61/496,667 2011-06-14
PCT/US2012/042287 WO2013055410A1 (en) 2011-06-14 2012-06-13 N-doping of organic semiconductors by bis-metallosandwich compounds

Publications (3)

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JP2014527281A JP2014527281A (ja) 2014-10-09
JP2014527281A5 JP2014527281A5 (cg-RX-API-DMAC7.html) 2015-07-30
JP6129826B2 true JP6129826B2 (ja) 2017-05-17

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JP2014515963A Active JP6129826B2 (ja) 2011-06-14 2012-06-13 ビス−金属サンドイッチ化合物による有機半導体のｎ−ドーピング

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Country Link
US (1) US9231219B2 (cg-RX-API-DMAC7.html)
EP (1) EP2721658A1 (cg-RX-API-DMAC7.html)
JP (1) JP6129826B2 (cg-RX-API-DMAC7.html)
KR (1) KR20140053101A (cg-RX-API-DMAC7.html)
AU (1) AU2012321307B2 (cg-RX-API-DMAC7.html)
IN (1) IN2014DN00183A (cg-RX-API-DMAC7.html)
WO (1) WO2013055410A1 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017059337A1 (en) * 2015-10-02 2017-04-06 Georgetown University High-resolution in situ electrochemical nmr with interdigitated electrodes
WO2020130934A1 (en) * 2018-12-21 2020-06-25 National University Of Singapore N-doped electrically conductive organic materials
JP7409215B2 (ja) * 2020-04-28 2024-01-09 三菱ケミカル株式会社 光電変換素子及び発電デバイス

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10347856B8 (de) 2003-10-10 2006-10-19 Colorado State University Research Foundation, Fort Collins Halbleiterdotierung
JP2007012359A (ja) 2005-06-29 2007-01-18 Hitachi Displays Ltd 有機ｅｌ表示装置
JP4928098B2 (ja) 2005-08-03 2012-05-09 セイコーエプソン株式会社 強誘電体キャパシタの製造方法
US7981328B2 (en) * 2006-06-22 2011-07-19 Georgia Tech Research Corporation N-type doping of an electron transport material and methods of use thereof

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Publication number Publication date
WO2013055410A1 (en) 2013-04-18
US9231219B2 (en) 2016-01-05
IN2014DN00183A (cg-RX-API-DMAC7.html) 2015-06-05
AU2012321307B2 (en) 2014-09-18
US20140302635A1 (en) 2014-10-09
JP2014527281A (ja) 2014-10-09
WO2013055410A9 (en) 2013-07-11
EP2721658A1 (en) 2014-04-23
KR20140053101A (ko) 2014-05-07
AU2012321307A1 (en) 2014-01-30

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