KR20140039458A - Vortex type substrate cleaning nozzle and apparatus using same - Google Patents
Vortex type substrate cleaning nozzle and apparatus using same Download PDFInfo
- Publication number
- KR20140039458A KR20140039458A KR1020120105583A KR20120105583A KR20140039458A KR 20140039458 A KR20140039458 A KR 20140039458A KR 1020120105583 A KR1020120105583 A KR 1020120105583A KR 20120105583 A KR20120105583 A KR 20120105583A KR 20140039458 A KR20140039458 A KR 20140039458A
- Authority
- KR
- South Korea
- Prior art keywords
- liquid
- gas
- discharge port
- discharged
- substrate
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/34—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to influence the nature of flow of the liquid or other fluent material, e.g. to produce swirl
- B05B1/3405—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to influence the nature of flow of the liquid or other fluent material, e.g. to produce swirl to produce swirl
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a substrate cleaning nozzle and a substrate cleaning apparatus using the same, a gas supply unit configured to discharge gas through a gas discharge port; A casing having a discharge port formed at a position spaced apart from the gas discharge port while surrounding a circumference of the gas discharge port; The liquid is discharged from the outside of the gas discharge port in the inclined direction and the flow direction of the gas discharged from the gas discharge port, from the liquid discharged from the liquid discharge port and the gas discharge port in the mixed space between the gas discharge port and the discharge port A liquid supply unit for discharging a liquid such that the discharged gas meets; And the liquid and the gas discharged from the discharge port as the liquid having the inclined direction component and the gas having the linear direction component meet and mix in a mixing space between the gas discharge port and the discharge port of the casing to form a vortex component. Of the mixed fluid is sprayed in the form of wider cross-section by the vortex component to perform wide cleaning, so that the foreign substances and contamination remaining on the surface of the substrate can be removed more cleanly while reducing the time required for cleaning the substrate. A cleaning nozzle and a substrate cleaning apparatus using the same are provided.
Description
The present invention relates to a substrate cleaning nozzle and a substrate cleaning apparatus using the same, and more particularly, a substrate cleaning nozzle capable of improving the efficiency of cleaning or rinsing a substrate by mixing a high-pressure gas and a liquid and spraying the surface of the substrate. It relates to a substrate cleaning device using the same.
The process of manufacturing a semiconductor device includes a process of allowing foreign matter to remain on the surface, such as a CMP process. Accordingly, an apparatus for removing and cleaning particles, organic contaminants, metal impurities, and the like adhering to the surface of the wafer is used. In addition, also in the process of manufacturing a display apparatus, it is necessary to apply a liquid crystal display element to the clean glass substrate from which the foreign material on the surface of the thin glass substrate was removed.
As such, the processing of substrates such as wafers used to manufacture semiconductor devices or glass substrates used to manufacture display devices (hereinafter referred to as "wafers" and "glass substrates" are referred to as "substrates"). The cleaning process is necessarily accompanied.
The substrate cleaning process may be performed in various forms, but one of them is known by mixing a cleaning liquid and a high pressure gas by using a fluid nozzle and spraying onto the wafer surface. 1 shows a conventional substrate cleaning apparatus. The
However, in the conventional
In addition, since the
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to shorten the cleaning and rinsing time of a substrate when cleaning or rinsing the surface of the substrate using a mixed fluid mixed with a high pressure gas and a liquid.
In addition, an object of the present invention is to improve the cleaning and rinsing efficiency by more easily separating foreign substances such as particles remaining on the substrate during the cleaning or rinsing process of the substrate.
In addition, an object of the present invention is to minimize the scratching of the substrate by the foreign matter in the process of removing the foreign matter remaining on the surface of the substrate.
By doing so, the present invention uses a mixed fluid of high pressure gas and liquid to clean or rinse the substrate in a shorter time, while minimizing the possibility of damaging the substrate to foreign substances such as particles remaining on the surface of the substrate. It is aimed at separating and removing effectively.
In order to achieve the above technical problem, the present invention, the gas supply unit for discharging the gas through the gas discharge port; A casing having a discharge port formed at a position spaced apart from the gas discharge port while surrounding a circumference of the gas discharge port; Discharging liquid in a flow direction and an inclined direction of the gas discharged from the gas discharge port, so that the liquid discharged from the liquid discharge port meets the gas discharged from the gas discharge port in a mixed space between the gas discharge port and the discharge hole; A liquid supply unit for discharging a liquid; And a pressure of the gas discharged from the gas discharge port is higher than a pressure of the liquid discharged from the liquid discharge port.
This discharges the gas at a high pressure from the gas discharge port and at the same time discharges the liquid from the liquid discharge port inclined with respect to the flow direction of the gas discharged from the gas discharge port, so that the liquid having the inclined direction component and the gas having the linear direction component are the gas discharge port. As the vortex component is generated while being met and mixed in the mixing space between the outlet and the discharge port of the casing, the mixed fluid of the liquid and the gas discharged from the discharge port is sprayed in such a manner that the cross section is gradually widened by the vortex component. Here, since the flow of the liquid discharged from the liquid discharge port is discharged in a direction inclined with respect to the linear component of the gas, the liquid flow naturally includes a circumferential component that rotates about the center point of the linear component of the gas. The vortex is formed while mixing.
As such, the mixed fluid in which the gas and the liquid discharged at a high pressure are injected in a form in which the cross section is gradually increased from the discharge port of the nozzle, so that the area in which the mixed fluid comes into contact with the surface of the substrate is wider than in the related art. As a result, it is possible to shorten the time required for the mixed fluid to sweep through the substrate surface while moving either the substrate or the nozzle.
When the vortex components of the mixed fluid generated by mixing different components of the liquid and gas reach the surface of the substrate, the vortices having a direction component parallel to the substrate surface remove the foreign matter attached to the surface of the substrate. Unlike the conventional art, in which foreign matters are perpendicular to the plate surface of the substrate by the mixed fluid, shear force acts in a direction parallel to the plate surface of the substrate by the mixed fluid, so that the foreign matter is attached or fixed to the surface of the substrate. By separating foreign matters more easily from the surface of the substrate without causing scratches or the like on the substrate, the cleaning and rinsing efficiency can be improved.
At this time, the liquid supply part discharges the liquid in two or more inclined directions different from the flow direction of the gas so that two vortices are formed where the gas discharged from the gas discharge port and the liquid discharged from the liquid discharge port meet each other. By generating the above path, the vortices are uniformly guided in all directions with respect to the center point of the discharge port of the nozzle, so that the effect of removing the foreign substances due to the vortices is uniform and excellent over the entire area of the substrate where the mixed fluid reaches. do.
On the other hand, the inclination angle Φ of the flow direction of the liquid discharged from the liquid discharge port and the flow direction of the gas discharged from the gas discharge port is greater than 10 degrees and is set within a range of 90 degrees or less. When the inclination angle is smaller than 10 degrees, it is preferable to maintain the inclination angle larger than 10 degrees because the spreading phenomenon of the mixed fluid discharged from the discharge port of the nozzle becomes smaller. Further, even when the inclination angle is 90 degrees (that is, when the liquid is discharged in a direction perpendicular to the flow direction of the gas), the phenomenon of spreading of the mixed fluid may be realized by the flow of the gas.
At this time, the liquid discharged from the liquid discharge port flows with a rotating component (circumferential component) surrounding the center of the gas discharge port, and mixes with the gas discharged from the gas discharge port, and vortex is generated in the mixed fluid.
On the other hand, according to another embodiment of the present invention, the end of the liquid supply portion is formed by a spiral passage that surrounds the gas supply portion, the liquid is injected from the liquid discharge port in a spiral path, the Larger circumferential components around the center can be implemented.
According to another embodiment of the present invention, a vortex forming blade which guides the liquid discharged from the liquid discharge port into a vortex having a spiral flow component is formed inside the casing, so that the flow of liquid discharged from the liquid discharge port is discharged from the gas discharge port. Even if the gas flow proceeds in parallel with the discharged gas flow, the path is changed so that the flow of the liquid is inclined with the gas discharge port and has a circumferential direction by the vortex forming blade. The farther it is, the larger the cross section is sprayed.
On the other hand, it is effective that the gas supply part has two or more gas discharge ports. Even when the gas is discharged through the gas supply unit at the same flow rate and flow rate, a plurality of gas discharge ports are formed, thereby dividing the liquid into smaller droplets in the process of meeting and mixing the liquid discharged from the liquid discharge port, thereby allowing the liquid to flow into the mixed fluid. Can lead to a smaller droplet size of the liquid. As a result, even when the mixed fluid contains the same amount of liquid, the surface of the substrate is brought into contact with the surface of the smaller droplets, so that the spraying force can be uniformly applied to the entire area of the mixed fluid.
The liquid used in the nozzle according to the present invention may be any one or more of deionized water and a cleaning liquid. That is, the board | substrate rinsing process can be performed with the mixed fluid which mixed pure water and gas, and the board | substrate washing process can also be performed with the mixed fluid which mixed the washing | cleaning liquid and gas. The term 'wash' described in the present specification and claims is defined as including not only the meaning of washing cleanly, but also the meaning of 'rinsing' to wash once again.
On the other hand, according to another field of the invention, the present invention comprises a liquid chamber for storing a liquid; A gas chamber for storing gas; Liquid is supplied from the liquid chamber to the liquid supply portion, gas is supplied from the gas chamber to the gas supply portion, and a mixed fluid in which the liquid and the gas are mixed is injected through the discharge port. and; Moving means for moving any one of said substrate cleaning nozzle and said substrate; It provides a substrate cleaning device comprising.
At this time, the distance between the substrate cleaning nozzle and the substrate is adjusted to 20mm to 200mm. In the substrate cleaning apparatus according to the present invention, after the mixed fluid in which the liquid and gas are mixed is discharged from the nozzle discharge port, the wide area can be cleaned by the vortex component, so that the substrate is positioned at a position shorter than 20 mm from the discharge port. However, since the mixed fluid reaches the substrate before the cross-sectional area of the mixed fluid is sufficiently widened by the vortex component, it is limited in improving the cleaning efficiency. This is because the further away from the discharge port, the weaker it becomes and the efficiency of removing foreign matter on the surface of the substrate by the vortex component is lowered.
The gas supply unit may include two or more gas discharge ports, thereby further increasing the effect of dividing the liquid discharged from the liquid discharge port into smaller micro-mist.
The liquid may be any one or more of deionized water and a cleaning liquid.
As described above, the present invention discharges the gas from the gas discharge port at high pressure, and simultaneously discharges the liquid from the liquid discharge port inclined with respect to the flow direction of the gas discharged from the gas discharge port, so that the liquid having the inclined direction component and the linear component As the gas having the gas is formed in the mixing space between the gas discharge port and the discharge port of the casing, the vortex component is generated while being mixed, the mixed fluid of the liquid and gas discharged from the discharge port is injected in a form in which the cross section is gradually widened by the vortex component. It is possible to obtain an advantageous effect of enabling wide cleaning.
In this way, the present invention is because the mixed fluid is injected over a larger cross-sectional area than the case of cleaning the substrate by a conventional nozzle cleaning method, the substrate cleaning process by shortening the time to clean the mixed fluid through the entire surface of the substrate The efficiency can be further improved.
In addition, the present invention, because the vortex component of the mixed fluid generated by mixing the different components of the liquid and gas removes the foreign matter adhered to the surface of the substrate by the shear force, the foreign matter adhered to or adhered to the surface of the substrate There is an advantage that it is possible to separate more easily from the surface of the substrate without causing damage, such as scratches, to enable a cleaner cleaning than the conventional.
In the present invention, since the liquid and the gas are discharged from two or more discharge ports and mixed with each other, the size of the droplets forming the vortex becomes finer, and the vortex is induced uniformly over the whole position based on the center point of the discharge port of the nozzle. An advantageous effect can be obtained in which the effect of removing foreign matters due to vortex is uniform and excellent over the entire area of the substrate where the mixed fluid reaches.
Through this, the present invention can remove the foreign matter and contamination remaining on the surface of the substrate more cleanly while reducing the time required to clean the substrate.
1 is a view showing the configuration of a conventional substrate cleaning nozzle
Figure 2 is a photograph taken showing the appearance of the substrate cleaning nozzle according to the first embodiment of the present invention
FIG. 3 is a photograph showing an appearance of the substrate cleaning nozzle of FIG. 2 as viewed from below. FIG.
4 is a view for explaining the principle of operation of FIG.
Fig. 5 is a bottom view showing the flow direction of the liquid in Fig. 4
6 is a longitudinal sectional view of the substrate cleaning nozzle according to the second embodiment of the present invention;
FIG. 7A is a cross-sectional view along the cutting line AA of FIG. 6
FIG. 7B is a cross-sectional view along the cutting line BB of FIG. 6
8 is a longitudinal sectional view of the substrate cleaning nozzle according to the third embodiment of the present invention.
9 is a cross-sectional view taken along the cutting line CC of FIG.
10 is a perspective view of a substrate cleaning nozzle according to a fourth embodiment of the present invention.
Hereinafter, the
2 to 5, the
The
The
The
Therefore, the
At this time, the
As such, the
Further, when the
Hereinafter, a
The
At this time, the
As such, the diameter do of the contact area of the
At this time, the
On the other hand, if the distance H from the
Hereinafter, a
The
More specifically, as shown in Fig. 8, the
Accordingly, as shown in FIG. 8, in the
Hereinafter, a
In the
Accordingly, as shown in FIG. 10, the
In the present invention illustrated in various embodiments as described above, the
In the above described exemplary embodiments of the present invention by way of example, the scope of the present invention is not limited to the specific embodiments as described above, by those of ordinary skill in the art to which the present invention belongs It is possible to change as appropriate within the scope described in the claims.
W: Substrate 18: Mixed Space
66:
77:
88:
101, 102, 103, 104: substrate cleaning nozzle
110:
120:
130:
Claims (13)
A casing having a discharge port formed at a position spaced apart from the gas discharge port while surrounding a circumference of the gas discharge port;
The liquid is discharged in an inclined direction and a flow direction of the gas discharged from the gas discharge port, and the liquid is discharged so that the liquid discharged from the liquid discharge port meets the gas discharged from the gas discharge port in the space between the gas discharge port and the discharge port. A liquid supply unit for discharging;
And the pressure of the gas discharged from the gas discharge port is higher than the pressure of the liquid discharged from the liquid discharge port.
And the liquid supply part discharges the liquid at two or more places in an inclined direction different from the flow direction of the gas.
And an inclination angle between the flow direction of the liquid discharged from the liquid discharge port and the flow direction of the gas discharged from the gas discharge port is greater than 10 degrees and equal to or less than 90 degrees.
And the liquid discharged from the liquid discharge port flows with a rotational component surrounding the center of the gas discharge port.
The end of the liquid supply portion is formed with a spiral passageway surrounding the gas supply portion, the liquid is sprayed from the liquid discharge port in a spiral path characterized in that the substrate cleaning nozzle.
And a vortex forming blade formed inside the casing for guiding the liquid discharged from the liquid discharge port into a vortex having a spiral flow component.
And the gas supply part has two or more gas discharge ports.
And the liquid is at least one of deionized water and a cleaning liquid.
And the gas supply part has two or more gas discharge ports.
A gas chamber for storing gas;
The liquid is supplied from the liquid chamber to the liquid supply portion, the gas is supplied from the gas chamber to the gas supply portion, and a mixed fluid in which the liquid and the gas are mixed is injected through the discharge port. A substrate cleaning nozzle according to any one of claims 1 to 3;
Moving means for moving any one of said substrate cleaning nozzle and said substrate;
Substrate cleaning device comprising.
And a distance between the substrate cleaning nozzle and the substrate is 20 mm to 200 mm.
And said gas supply part has two or more gas discharge ports.
And said liquid is at least one of deionized water and a cleaning liquid.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120105583A KR20140039458A (en) | 2012-09-24 | 2012-09-24 | Vortex type substrate cleaning nozzle and apparatus using same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120105583A KR20140039458A (en) | 2012-09-24 | 2012-09-24 | Vortex type substrate cleaning nozzle and apparatus using same |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20140039458A true KR20140039458A (en) | 2014-04-02 |
Family
ID=50650073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120105583A KR20140039458A (en) | 2012-09-24 | 2012-09-24 | Vortex type substrate cleaning nozzle and apparatus using same |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20140039458A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115379718A (en) * | 2022-07-12 | 2022-11-22 | 电子科技大学 | Double-layer micro-channel heat dissipation structure facing non-uniform heat source |
-
2012
- 2012-09-24 KR KR1020120105583A patent/KR20140039458A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115379718A (en) * | 2022-07-12 | 2022-11-22 | 电子科技大学 | Double-layer micro-channel heat dissipation structure facing non-uniform heat source |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4758694B2 (en) | Proximity proximity process head | |
JP4578373B2 (en) | Substrate processing equipment | |
CN107534011B (en) | Substrate bevel and backside protection device | |
JP2009285769A (en) | Cutting device | |
JP2009076918A (en) | Substrate machining method, spin unit, and substrate machining device using the spin unit | |
JP2007168039A (en) | Polishing surface washing mechanism of polishing table and polishing device | |
US10290490B2 (en) | Dust collecting apparatus, substrate processing system, and method of manufacturing semiconductor device | |
JP2004140345A (en) | Semiconductor manufacturing device | |
KR100930579B1 (en) | Nozzle for cleaning | |
KR101971151B1 (en) | Apparatus For Wafer Cleaning | |
CN107424896B (en) | Chamber cleaning system | |
KR20140039458A (en) | Vortex type substrate cleaning nozzle and apparatus using same | |
JP2007042742A (en) | Substrate cleaning method and device | |
KR20100013651A (en) | Jet unit and wafer cleaning apparatus having the same | |
US11107671B2 (en) | Method of processing semiconductor substrate | |
KR20200056045A (en) | Two-liquids jetting nozzle | |
TWI567847B (en) | Wafer cleaning device and cleaning method | |
KR101615426B1 (en) | The slurry injection nozzle and a substrate processing apparatus using the nozzle | |
KR102105950B1 (en) | Multi nozzle for cleaning wafer | |
KR20160127537A (en) | Substrate treating apparatus and mixture gas nozzle used therein | |
KR102223760B1 (en) | Unit for suppying fluid and substrate processing apparatus using the same | |
KR102134439B1 (en) | Substrate treating apparatus and substrate treating method | |
KR102176209B1 (en) | Substrate processing device for foreign matter removal | |
KR102007523B1 (en) | Substrate cleaning system | |
KR101586955B1 (en) | Comb Supporting Wafer in Cleaning Bath and Apparatus for Cleaning Wafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |