KR20140028964A - 발광 분포가 우수한 반도체 발광소자 - Google Patents

발광 분포가 우수한 반도체 발광소자 Download PDF

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Publication number
KR20140028964A
KR20140028964A KR1020120096433A KR20120096433A KR20140028964A KR 20140028964 A KR20140028964 A KR 20140028964A KR 1020120096433 A KR1020120096433 A KR 1020120096433A KR 20120096433 A KR20120096433 A KR 20120096433A KR 20140028964 A KR20140028964 A KR 20140028964A
Authority
KR
South Korea
Prior art keywords
light emitting
emitting device
dielectric
refractive index
semiconductor light
Prior art date
Application number
KR1020120096433A
Other languages
English (en)
Korean (ko)
Inventor
송정섭
김두성
김동우
최원진
Original Assignee
일진엘이디(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 일진엘이디(주) filed Critical 일진엘이디(주)
Priority to KR1020120096433A priority Critical patent/KR20140028964A/ko
Priority to PCT/KR2013/007866 priority patent/WO2014035205A2/ko
Priority to TW102131433A priority patent/TW201417340A/zh
Publication of KR20140028964A publication Critical patent/KR20140028964A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020120096433A 2012-08-31 2012-08-31 발광 분포가 우수한 반도체 발광소자 KR20140028964A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020120096433A KR20140028964A (ko) 2012-08-31 2012-08-31 발광 분포가 우수한 반도체 발광소자
PCT/KR2013/007866 WO2014035205A2 (ko) 2012-08-31 2013-08-30 발광 분포가 우수한 반도체 발광소자
TW102131433A TW201417340A (zh) 2012-08-31 2013-08-30 具有優異的發光分布之半導體發光裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120096433A KR20140028964A (ko) 2012-08-31 2012-08-31 발광 분포가 우수한 반도체 발광소자

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR20150030141A Division KR20150039178A (ko) 2015-03-04 2015-03-04 발광 분포가 우수한 반도체 발광소자

Publications (1)

Publication Number Publication Date
KR20140028964A true KR20140028964A (ko) 2014-03-10

Family

ID=50184546

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120096433A KR20140028964A (ko) 2012-08-31 2012-08-31 발광 분포가 우수한 반도체 발광소자

Country Status (3)

Country Link
KR (1) KR20140028964A (zh)
TW (1) TW201417340A (zh)
WO (1) WO2014035205A2 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016006781A1 (en) * 2014-07-07 2016-01-14 Iljin Led Co., Ltd. Side-emitting type nitride semiconductor light emitting chip and side-emitting type nitride semiconductor light emitting device having the same
US9548426B2 (en) 2014-09-19 2017-01-17 Samsung Electronics Co., Ltd. Semiconductor light-emitting device
WO2018080061A3 (ko) * 2016-10-25 2018-08-09 서울반도체주식회사 발광 다이오드 패키지 및 그것을 갖는 디스플레이 장치

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692120B (zh) * 2014-09-23 2020-04-21 晶元光電股份有限公司 發光二極體
TWI556470B (zh) * 2014-09-23 2016-11-01 璨圓光電股份有限公司 發光二極體
KR102160030B1 (ko) * 2019-01-17 2020-09-28 상하이 아스코어 테크놀로지 컴퍼니 리미티드 레이저 소자

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3646732B2 (ja) * 1994-08-11 2005-05-11 ローム株式会社 フィルタ付き半導体発光素子
JP3659098B2 (ja) * 1999-11-30 2005-06-15 日亜化学工業株式会社 窒化物半導体発光素子
JP2006186022A (ja) * 2004-12-27 2006-07-13 Toyoda Gosei Co Ltd 発光装置
KR100638731B1 (ko) * 2005-04-15 2006-10-30 삼성전기주식회사 플립칩용 질화물 반도체 발광소자 및 그 제조방법
EP2374165B1 (en) * 2008-12-02 2019-01-09 Lumileds Holding B.V. Led assembly

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016006781A1 (en) * 2014-07-07 2016-01-14 Iljin Led Co., Ltd. Side-emitting type nitride semiconductor light emitting chip and side-emitting type nitride semiconductor light emitting device having the same
US9548426B2 (en) 2014-09-19 2017-01-17 Samsung Electronics Co., Ltd. Semiconductor light-emitting device
WO2018080061A3 (ko) * 2016-10-25 2018-08-09 서울반도체주식회사 발광 다이오드 패키지 및 그것을 갖는 디스플레이 장치
US10573793B2 (en) 2016-10-25 2020-02-25 Seoul Semiconductor Co., Ltd. Light emitting diode package and display apparatus including the same
CN113314651A (zh) * 2016-10-25 2021-08-27 首尔半导体株式会社 发光二极管封装件以及显示装置

Also Published As

Publication number Publication date
WO2014035205A2 (ko) 2014-03-06
WO2014035205A3 (ko) 2014-05-08
TW201417340A (zh) 2014-05-01

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