WO2014035205A3 - 발광 분포가 우수한 반도체 발광소자 - Google Patents

발광 분포가 우수한 반도체 발광소자 Download PDF

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Publication number
WO2014035205A3
WO2014035205A3 PCT/KR2013/007866 KR2013007866W WO2014035205A3 WO 2014035205 A3 WO2014035205 A3 WO 2014035205A3 KR 2013007866 W KR2013007866 W KR 2013007866W WO 2014035205 A3 WO2014035205 A3 WO 2014035205A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting element
substrate
semiconductor light
emission distribution
Prior art date
Application number
PCT/KR2013/007866
Other languages
English (en)
French (fr)
Other versions
WO2014035205A2 (ko
Inventor
송정섭
김두성
김동우
최원진
Original Assignee
일진엘이디(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 일진엘이디(주) filed Critical 일진엘이디(주)
Publication of WO2014035205A2 publication Critical patent/WO2014035205A2/ko
Publication of WO2014035205A3 publication Critical patent/WO2014035205A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

광을 투과 혹은 반사시킴과 동시에 도파시킬 수 있는 유전체부를 형성하여, 외부로 방출되는 광의 발광 분포를 넓힐 수 있는 반도체 발광소자에 대하여 개시한다. 본 발명의 실시예에 따른 반도체 발광소자는 기판; 상기 기판의 제1면 상에 형성되는 발광구조체; 및 상기 기판의 제2면 상에 형성되되, 굴절율이 서로 다른 복수의 유전체가 교대로 적층되면서 각각의 유전체층의 두께 분포가 비규칙적인 유전체부를 포함하며, 상기 기판이 윈도우로 작용하여, 상기 발광구조체에서 생성되는 광이 상기 유전체부를 통하여 외부로 발광되는 것을 특징으로 한다.
PCT/KR2013/007866 2012-08-31 2013-08-30 발광 분포가 우수한 반도체 발광소자 WO2014035205A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120096433A KR20140028964A (ko) 2012-08-31 2012-08-31 발광 분포가 우수한 반도체 발광소자
KR10-2012-0096433 2012-08-31

Publications (2)

Publication Number Publication Date
WO2014035205A2 WO2014035205A2 (ko) 2014-03-06
WO2014035205A3 true WO2014035205A3 (ko) 2014-05-08

Family

ID=50184546

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2013/007866 WO2014035205A2 (ko) 2012-08-31 2013-08-30 발광 분포가 우수한 반도체 발광소자

Country Status (3)

Country Link
KR (1) KR20140028964A (ko)
TW (1) TW201417340A (ko)
WO (1) WO2014035205A2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160005827A (ko) * 2014-07-07 2016-01-18 일진엘이디(주) 측면 발광형 질화물 반도체 발광 칩 및 이를 갖는 발광 소자
KR20160034534A (ko) 2014-09-19 2016-03-30 삼성전자주식회사 반도체 발광 소자
TWI556470B (zh) 2014-09-23 2016-11-01 璨圓光電股份有限公司 發光二極體
TWI692120B (zh) * 2014-09-23 2020-04-21 晶元光電股份有限公司 發光二極體
EP4276922A3 (en) * 2016-10-25 2024-02-21 Seoul Semiconductor Co., Ltd. Display apparatus based on light-emitting diode packages
KR102160030B1 (ko) * 2019-01-17 2020-09-28 상하이 아스코어 테크놀로지 컴퍼니 리미티드 레이저 소자

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0856014A (ja) * 1994-08-11 1996-02-27 Rohm Co Ltd フィルタ付き半導体発光素子
JP2001156331A (ja) * 1999-11-30 2001-06-08 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2006186022A (ja) * 2004-12-27 2006-07-13 Toyoda Gosei Co Ltd 発光装置
KR20060109375A (ko) * 2005-04-15 2006-10-20 삼성전기주식회사 플립칩용 질화물 반도체 발광소자 및 그 제조방법
US20110220953A1 (en) * 2008-12-02 2011-09-15 Koninklijke Philips Electronics N.V. Led assembly

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0856014A (ja) * 1994-08-11 1996-02-27 Rohm Co Ltd フィルタ付き半導体発光素子
JP2001156331A (ja) * 1999-11-30 2001-06-08 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2006186022A (ja) * 2004-12-27 2006-07-13 Toyoda Gosei Co Ltd 発光装置
KR20060109375A (ko) * 2005-04-15 2006-10-20 삼성전기주식회사 플립칩용 질화물 반도체 발광소자 및 그 제조방법
US20110220953A1 (en) * 2008-12-02 2011-09-15 Koninklijke Philips Electronics N.V. Led assembly

Also Published As

Publication number Publication date
TW201417340A (zh) 2014-05-01
WO2014035205A2 (ko) 2014-03-06
KR20140028964A (ko) 2014-03-10

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