KR20140007767A - Liquid processing apparatus, liquid processing method and storage medium - Google Patents

Abstract

The residue and cracking of liquid on the substrate surface are prevented by controlling the boundary surface in a liquid film and a drying area when a process for forming the liquid film of the processing liquid on the substrate surface is performed and the liquid film is removed and dried. Furthermore, the substrate surface is prevented from being damaged. While a wafer (W) is rotated, the liquid film is formed by supplying cleaning solution (L) around the surface of the wafer from a first cleaning solution nozzle (60). A drying are (D) is formed by supplying N2 gas from a first gas nozzle (70) towards the periphery from the central part of the wafer and removing the liquid film on the wafer surface. When a first drying fluid supply unit is moved to the second drying fluid supply start position and concentric position predetermined not to interfere with the first drying fluid supply unit, the N2 gas is supplied to the boundary surface of the liquid film and the drying area from a second gas nozzle (80) towards the periphery of the wafer from the drying fluid supply start position and the first gas nozzle and the second gas nozzle are moved in a concentric circle shape.

Description

Liquid processing apparatus, liquid processing method and storage medium for liquid processing {LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND STORAGE MEDIUM}

The present invention relates to a liquid processing apparatus, a liquid processing method and a storage medium for liquid processing.

In a semiconductor manufacturing process, the process of supplying a process liquid to a board | substrate surface and forming a liquid film, for example, rotating a board | substrate, such as a semiconductor wafer, in the state hold | maintained horizontally, performs the process of drying fluid to a board | substrate surface after that. A liquid treatment apparatus and a liquid treatment method for supplying the liquid film to remove the liquid film and to dry it are used.

For example, in a photolithography process, a photoresist is apply | coated on a board | substrate, a resist film is exposed according to a predetermined circuit pattern, and a circuit pattern is formed by developing. Usually, the processing system which connected the exposure apparatus to the application | coating and developing processing apparatus is used for this photolithography process.

In the photolithography step, a developer is accumulated on a substrate, and a soluble portion of the resist is dissolved to form a circuit pattern. Thereafter, in general, liquid treatment is performed to remove the dissolved product of the resist from the substrate surface together with the developer.

Conventionally, as a method of liquid treatment of this kind, a liquid film is formed by supplying the processing liquid from the processing liquid supply nozzle moving from the center of the substrate toward the periphery while rotating the substrate held horizontally to the surface of the substrate, and further processing liquid. An apparatus (method) for removing a liquid film on the surface of a substrate by drying the liquid from the surface of the substrate by supplying the drying fluid to the surface of the substrate from a drying fluid, such as an inert gas, which is moved from the center of the substrate toward the periphery of the substrate. Is known (for example, refer patent document 1).

As another liquid treatment method, the gas is annularly formed on the surface of the substrate from a gas jetting means provided above the rotation center of the substrate while the substrate is rotated while the substrate is horizontally held by the liquid film of the treatment liquid. The apparatus (method) which sprays, removes a liquid film, and dries is known (for example, refer patent document 2).

Japanese Patent Laid-Open No. 2001-053051 (Patent Claims) Japanese Patent Application Laid-Open No. 2009-111219 (claims)

However, in the technique described in Patent Document 1, since the processing liquid supply nozzle and the dry gas supply nozzle are simultaneously moved from the center of the substrate toward the periphery, the processing liquid supply nozzle 60C with respect to the rotation of the substrate (wafer) W. And the positional relationship of 70 C of dry gas supply nozzles are shown as FIG. 19A. Therefore, in the area A where the processing liquid supply nozzle 60C and the dry gas supply nozzle 70C are located, the liquid film and the dry gas supply of the processing liquid (cleaning liquid) L supplied from the processing liquid supply nozzle 60C are supplied. The interface of the dry region D from which the liquid film is removed by the dry gas supplied from the nozzle 70C is controlled (see FIG. 19B). However, in the regions B and C on the downstream side in the rotational direction of the substrate (wafer) W from the region A where the processing liquid supply nozzle 60C and the dry gas supply nozzle 70C are located, the region A is In the region B close to, a slight collapse occurs in the liquid film on the interface (see FIG. 19C). In the region C farther than the region B, the liquid film on the interface completely collapses. Water) (see Fig. 19D). As described above, when the boundary surface of the liquid film collapses, residues are generated in the substrate surface to cause defects in the substrate (wafer) W. FIG. In particular, in the cleaning process of the substrate W forming the fine and high aspect ratio circuit pattern, the processing liquid (cleaning liquid) remains between the circuit patterns, and when the surface tension of the processing liquid (cleaning liquid) between the circuit patterns becomes dominant, Pattern collapse occurs under the influence of the balance of stress between circuit patterns. And this appears as a development defect.

When the substrate (wafer) W has hydrophobicity, for example, in the exposed portion and the unexposed portion after development, the exposed portion has hydrophilicity, and the unexposed portion has hydrophobicity. In the hydrophobic (unexposed) portion, the interface between the liquid film of the treatment liquid and the drying area is maintained in the vicinity of the treatment liquid supply nozzle similarly to the hydrophilic (exposure portion). As a result, the liquid film is cracked at the boundary surface to make water droplets (see FIG. 19D), and the droplet scatters toward the inner surface of the substrate, causing contamination of the substrate surface. And this appears as a development defect. This phenomenon is particularly remarkable in the cleaning treatment after exposure and development using a super water-repellent protective film.

On the other hand, the technique described in Patent Literature 2 rotates the substrate covered with the liquid film of the processing liquid in a state where it is held horizontally, and injects gas to the surface of the substrate in an annular manner from the gas jetting means provided above the rotation center of the substrate to form a liquid film. Although it removes and dries, when paying attention to the part which removes a liquid film by the gas injected from a gas injection means, like the technique of patent document 1, collapse or liquid splitting of a liquid film generate | occur | produce.

In addition, compared to the technique described in Patent Document 1, the technique described in Patent Document 2 has a smaller controllability of the interface between the liquid film and the dry region, and for example, to increase the control capability of the interface, it is necessary to use a very large amount of gas. It is not practical, and since the gas injection means moves upwards to move the gas to the outer periphery of the substrate, control of the boundary surface becomes more difficult toward the outer periphery.

This invention is made | formed in view of the said situation, and performs the process which forms the liquid film of a process liquid on a board | substrate surface, and controls the interface of a liquid film and a dry area | region by removing the liquid film and drying it, An object of the present invention is to provide a liquid processing apparatus, a liquid processing method, and a liquid storage medium for preventing the residue of the processing liquid and preventing the liquid cracking, and the defects on the surface of the substrate.

MEANS TO SOLVE THE PROBLEM In order to solve the said subject, the 1st liquid processing apparatus of this invention is a board | substrate holding part which hold | maintains a board | substrate horizontally, the rotation mechanism which rotates the said board | substrate holding part about a rotation center axis | shaft, and a processing liquid to the surface of the said board | substrate. A first processing liquid supply part for supplying a liquid, a first dry fluid supply part for supplying a dry fluid to the substrate, a second dry fluid supply part for supplying a dry fluid to the substrate, and a first dry fluid supply part of the substrate. A first moving mechanism for moving from the center to the periphery, and the second dry fluid supply starting position set to a position where the second dry fluid supply does not interfere with the first dry fluid supply between the center and the periphery of the substrate; A second moving mechanism that moves from the substrate toward the periphery of the substrate, the rotating mechanism, the first processing liquid supply unit, and the first and second And a control unit for controlling the driving of the dry fluid supply unit and the first and second moving mechanisms, and supplying the processing liquid from the first processing liquid supply unit to the center of the surface of the substrate while rotating the substrate by the control unit. A liquid film is formed, and a drying fluid is supplied from the first dry fluid supply part toward the periphery of the substrate to remove the liquid film on the surface of the substrate to form a dry area, and the first dry fluid supply part supplies the second dry fluid. When moved to a position concentric with the start position, a dry fluid is supplied from the second dry fluid supply to the interface between the liquid film and the dry region from the second dry fluid supply start position toward the periphery of the substrate, and further comprises a first fluid. The dry fluid supply part and the second dry fluid supply part are moved concentrically.

In the above liquid processing apparatus, it is preferable that a plurality of the second dry fluid supply units are provided, and the plurality of second dry fluid supply units are formed to be movable by the second moving mechanism. Moreover, you may form the said 2nd dry fluid supply part in convex arc shape toward the peripheral part of a board | substrate.

In the liquid processing apparatus, a third moving mechanism for moving the first processing liquid supply part from the center of the substrate toward the peripheral portion may further be provided, and the control unit controls the driving of the third moving mechanism. In this case, it is preferable that the first dry fluid supply part is provided on the rear side with respect to the moving direction of the first processing liquid supply part, and the first dry fluid supply part moves in accordance with the movement of the first processing liquid supply part. . Moreover, it is preferable to make the said 1st moving mechanism and a 3rd moving mechanism into a common moving mechanism.

The liquid processing apparatus further comprises a standby position for allowing the second dry fluid supplying part to be placed outward from the periphery of the substrate held by the substrate holding part, wherein the first dry fluid supplying part is provided by the controller. The second dry fluid supply part is located in the standby position when moving from the center of the center to the periphery, and the second dry fluid supply part moves to a position concentric with the second dry fluid supply start position. Preferably, the dry fluid supply is moved to the second dry fluid supply start position, and then moved to a concentric shape.

Moreover, in the said liquid processing apparatus, it is preferable to stop supply of the dry fluid from the said 2nd dry fluid supply part in the peripheral part of the said board | substrate before supply from the said 1st dry fluid supply part.

The second liquid processing apparatus of the present invention further includes a second processing liquid supply unit for supplying a processing liquid to the substrate, the second processing liquid supply unit and the second dry fluid supply unit in the liquid processing apparatus. Leading from the second processing liquid supply starting position and the second drying fluid supply starting position not interfering with the first processing liquid supplying portion and the first drying fluid supplying portion between the center of the substrate and the peripheral portion with the processing liquid supplying head first. And a control unit for controlling driving of the second processing liquid supply unit and the second moving mechanism, wherein the first processing liquid supply unit and the first drying fluid supply unit are further controlled by the control unit. The second processing liquid supply starting position and the second drying when moved to a position concentric with the second processing liquid supply starting position and the second drying fluid supply starting position. From the sieve supply start position toward the periphery of the substrate, the processing liquid is supplied from the second processing liquid supply part to the interface between the liquid film and the drying region, and a drying fluid is supplied from the second drying fluid supply part, and the first processing liquid supply part And moving the first dry fluid supply part, the second processing liquid supply part, and the second dry fluid supply part concentrically. In this case, it is preferable to provide two or more said 2nd process liquid supply parts, a 2nd dry fluid supply part, and a 2nd moving mechanism.

Moreover, the 3rd liquid processing apparatus of this invention is the board | substrate holding part which hold | maintains a board | substrate horizontally, the rotation mechanism which rotates the said board | substrate holding part about a rotation center axis, and the 1st and 2nd which supply a process liquid to the said board | substrate. The processing liquid supply part, the 1st dry fluid supply part which supplies a dry fluid to the said board | substrate, and the said 1st processing liquid supply part and the said 1st dry fluid supply part as the head of a said 1st process liquid supply part, and the peripheral part from the center of a board | substrate From the second processing liquid supply start position that does not interfere with the first processing liquid supply portion and the first dry fluid supply portion between the first moving mechanism and the second processing liquid supply portion moving between the center and the periphery of the substrate; Of the second moving mechanism for moving toward the periphery, the rotary mechanism, the first and second processing liquid supplying parts, the first dry fluid supplying part, and the first and second moving mechanisms. A control unit for controlling copper is provided, and by the control unit, the processing liquid is supplied from the first processing liquid supply unit to the center of the surface of the substrate while the substrate is rotated to form a liquid film, and further, from the first dry fluid supply unit. When the dry fluid is supplied to remove the liquid film on the surface of the substrate to form a dry region, the first processing liquid supply portion and the first dry fluid supply portion move to a position concentric with the second processing liquid supply start position, 2 Processing liquid is supplied from the processing liquid supply starting position toward the periphery of the substrate from the second processing liquid supplying part to the interface between the liquid film and the drying area, and the first processing liquid supplying part and the first drying fluid supplying part and the second processing are performed. The liquid supply unit is characterized by moving in a concentric shape. In this case, it is preferable to provide two or more said 2nd process liquid supply parts and 2nd moving mechanisms.

In the first liquid processing method of the present invention, while holding the substrate horizontally, while rotating about the central axis of the substrate, the processing liquid is supplied from the first processing liquid supply portion to the center of the surface of the substrate to form a liquid film on the surface of the substrate. Forming a dry region by rotating the substrate, and supplying a drying fluid from the first center of the surface of the substrate toward the periphery of the substrate while rotating the substrate to form a dry region by removing the liquid film on the substrate surface; While rotating the substrate, when the first dry fluid supply portion moves to a position concentric with a second dry fluid supply start position set to a position which does not interfere with the first dry fluid supply portion, from the second dry fluid supply start position. Drying fluid is transferred from the second drying fluid supply moving toward the periphery to the interface between the liquid film and the drying area. Class, and further characterized in that it comprises the step of moving in said first drying fluid supply unit and the parts of concentric circles 2 drying fluid supply.

Further, in the second liquid treatment method of the present invention, in the liquid treatment method, supply of the second treatment liquid is set to a position where the first dry fluid supply part does not interfere with the first dry fluid supply part while rotating the substrate. When moving to a position concentric with the position, the processing liquid is supplied from the second processing liquid supply portion moving from the second processing liquid supply start position toward the periphery to the interface between the liquid film and the drying area, and the second processing liquid supply portion A drying fluid is supplied from the second drying fluid supply part which moves from the second drying fluid supply start position toward the periphery to the interface between the liquid film and the drying area, and follows the first drying fluid supply part and the second processing liquid supply part; And moving the second dry fluid supply part in a concentric shape.

In addition, the third liquid treatment method of the present invention, while holding the substrate horizontally, rotates about the central axis of the substrate, supplying the treatment liquid from the first treatment liquid supply to the center of the surface of the substrate to the surface of the substrate Forming a liquid film, and supplying a drying fluid from a surface center of the substrate to a periphery of the substrate while rotating the substrate, removing the liquid film on the surface of the substrate to form a dry region; The second processing liquid supply starting position when the first drying fluid supply portion moves to a position concentric with the second processing liquid supply starting position, which is set to a position which does not interfere with the first dry fluid supplying portion while rotating the substrate. The processing liquid is supplied from the second processing liquid supply part moving toward the periphery to the interface between the liquid film and the drying area. And also it characterized in that it comprises the step of moving in concentric circles wherein the drying fluid supply unit 1 and the second processing solution supply.

In the liquid processing method, the first processing liquid supply unit is moved from the center of the surface of the substrate toward the peripheral portion, and the processing liquid is supplied from the first processing liquid supply unit to form a liquid film on the surface of the substrate. The drying fluid may be supplied from the first drying fluid supply unit following the first processing liquid supply unit to remove the liquid film on the substrate surface to form a dry region.

The liquid processing storage medium of the present invention is a computer-readable storage medium in which software for causing a computer to execute a control program is stored. The control program is a computer-readable storage medium so that a process in the liquid processing method is executed at execution. It is characterized by controlling a processing apparatus.

According to the first liquid processing apparatus (method) of the present invention, the processing liquid is supplied from the first processing liquid supply part to the center of the surface of the substrate while the substrate is held horizontally and rotated about the central axis, thereby providing a liquid film on the surface of the substrate. And then, while rotating the substrate, the drying fluid is supplied from the first dry fluid supply portion toward the periphery of the substrate from the surface center of the substrate to remove the liquid film on the surface of the substrate to form a dry region. Thereafter, while rotating the substrate, the first dry fluid supply part (or the first processing liquid supply part and the first dry fluid supply part) is concentric with the second dry fluid supply start position set to a position where it does not interfere with the first dry fluid supply part. When it is moved to the position, the drying fluid is supplied to the interface between the liquid film and the drying area from the second drying fluid supply moving from the second dry fluid supply start position toward the periphery, and the first drying fluid supply (or the first treatment) By moving the liquid supply part and the first dry fluid supply part) and the second dry fluid supply part concentrically, the boundary between the liquid film and the liquid film formed on the substrate surface can be removed to control the interface between the dry areas formed to prevent residue or liquid cracking of the processing liquid. have.

According to the second liquid processing apparatus (method) of the present invention, the processing liquid is supplied from the first processing liquid supply part to the center of the surface of the substrate while the substrate is held horizontally and rotated about the central axis, thereby providing a liquid film on the surface of the substrate. And then, while rotating the substrate, the drying fluid is supplied from the first dry fluid supply portion toward the periphery of the substrate from the surface center of the substrate to remove the liquid film on the surface of the substrate to form a dry region. Thereafter, while rotating the substrate, the first processing liquid supply portion and the first drying fluid supply portion are concentric with the second processing liquid supply starting position and the second drying fluid supply starting position, which are set to a position which does not interfere with the first dry fluid supplying portion. And the processing liquid from the second processing liquid supply starting position and the second drying fluid supply starting position toward the periphery thereof from the second processing liquid supply starting position and the second drying fluid supply starting position to the interface between the liquid film and the drying region. A dry region formed by supplying a drying fluid and removing the liquid film and the liquid film formed on the surface of the substrate by moving the first processing liquid supply part, the first drying fluid supply part, the second processing liquid supply part, and the second drying fluid supply part concentrically. It is possible to control the interface of the to prevent the residue or liquid cracking of the treatment liquid.

According to the third liquid processing apparatus (method) of the present invention, the processing liquid is supplied from the first processing liquid supply portion to the center of the surface of the substrate while the substrate is held horizontally and rotated about the central axis, thereby providing a liquid film on the surface of the substrate. And then, while rotating the substrate, the drying fluid is supplied from the first dry fluid supply portion toward the periphery of the substrate from the surface center of the substrate to remove the liquid film on the surface of the substrate to form a dry region. Thereafter, when the first processing liquid supply part and the first dry fluid supply part move to a position concentric with the second processing liquid supply start position set to a position where the first processing fluid supply part and the first drying fluid supply part do not interfere with the first drying fluid supply part while rotating the substrate, 2 The processing liquid is supplied from the second processing liquid supply part moving from the processing liquid supply start position toward the periphery to the interface between the liquid film and the drying area, and the first processing liquid supply part, the first drying fluid supply part, and the second processing liquid supply part By moving concentrically, the interface between the liquid film formed on the surface of the substrate and the dry region formed by removing the liquid film can be controlled to prevent residue or liquid splitting of the processing liquid. The third liquid processing apparatus (method) is effective in that it is possible to suppress the liquid splitting at the interface between the liquid film and the dry region, particularly when a super water-repellent film is formed on the substrate surface.

According to the present invention, in the liquid treatment in which the liquid film of the processing liquid is formed on the substrate surface and the liquid film is removed and dried, the residue of the processing liquid on the substrate surface is controlled by controlling the interface between the liquid film and the dry region. It is possible to prevent liquid splitting and to prevent defects on the surface of the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic plan view which shows the whole of the processing system which connected the exposure apparatus to the application | coating and developing processing apparatus to which the liquid processing apparatus which concerns on this invention was applied.
2 is a schematic perspective view of the processing system.
3 is a schematic longitudinal sectional view of a developing apparatus to which the liquid processing apparatus according to the first embodiment of the present invention is applied.
4 is a plan view showing a liquid processing apparatus according to the first embodiment.
5A to 5C are schematic plan views showing the process of the liquid treatment method according to the first embodiment of the present invention.
6A to 6C are schematic plan views showing the process of the liquid treatment method according to the second embodiment of the present invention.
7A to 7C are schematic plan views showing the process of the liquid treatment method according to the third embodiment of the present invention.
8 is a schematic longitudinal sectional view of a developing apparatus to which the liquid processing apparatus according to the fourth embodiment of the present invention is applied.
9 is a plan view showing a liquid processing apparatus according to the fourth embodiment.
10A to 10C are schematic plan views showing the process of the liquid treatment method according to the fourth embodiment of the present invention.
Fig. 11 is a schematic longitudinal sectional view of the developing apparatus to which the liquid processing apparatus according to the fifth embodiment of the present invention is applied.
12 is a plan view showing a liquid processing apparatus according to the fifth embodiment.
13A to 13C are schematic plan views showing the process of the liquid treatment method according to the fifth embodiment of the present invention.
14A to 14D are schematic plan views showing the process of the liquid treatment method according to the sixth embodiment of the present invention.
15A to 15C are schematic plan views showing a process of an example of a liquid treatment method according to a seventh embodiment of the present invention.
16A to 16C are schematic plan views showing the process of another example of the liquid treatment method according to the seventh embodiment of the present invention.
17A to 17C are schematic plan views showing the process of the liquid treatment method according to the eighth embodiment of the present invention.
18 is a schematic cross-sectional view showing the process of the liquid processing method according to the eighth embodiment.
19A to 19D are diagrams showing the positional relationship between a processing liquid supply nozzle and a dry gas supply nozzle with respect to a substrate in a conventional liquid processing method, in which 19a is a schematic plan view, and 19b, 19c, and 19d are regions of FIG. 19a ( It is a schematic sectional drawing of A, B, C).

EMBODIMENT OF THE INVENTION Below, the Example of this invention is described based on an accompanying drawing. Here, the case where the liquid processing apparatus which concerns on this invention is applied to a board | substrate washing | cleaning apparatus, and is applied to the processing system which connected the exposure processing apparatus to the application | coating and developing processing apparatus is demonstrated.

The processing system includes a carrier station 1 for carrying in and out of a carrier 10 that hermetically stores a plurality of semiconductor wafers W (hereinafter referred to as wafers W) as substrates to be processed, for example, 25 sheets. And a processing unit 2 which performs resist coating, developing, and the like on the wafer W taken out from the carrier station 1, and a wafer (with a liquid layer that transmits light on the surface of the wafer W). An exposure part 4 for immersion exposing the surface of W) and an interface part 3 connected between the processing part 2 and the exposure part 4 to transfer the wafer W are provided.

The carrier station 1 includes a mounting unit 11 capable of placing a plurality of carriers 10 side by side, an opening / closing unit 12 provided on the front wall surface when viewed from the mounting unit 11, and an opening / closing unit 12. The transfer means A1 for taking out the wafer W from the carrier 10 is provided.

Moreover, inside the carrier station 1, the processing part 2 enclosed by the housing 20 is connected, and this processing part 2 is heated and cooled in order from the left front side as seen from the carrier station 1. The shelf units U1, U2, and U3 which multiply the unit of U are arrange | positioned, and the liquid processing units U4 and U5 are arrange | positioned at the right side. Between the shelf units U1, U2, and U3, the main transport means A2, A3 which transfers the wafer W between each unit are arrange | positioned alternately with the shelf units U1, U2, and U3. . In addition, the main transport means A2 and A3 are the one surface part by the side of the shelf unit U1, U2, U3 arrange | positioned in the front-back direction when seen from the carrier station 1, and the liquid processing unit of the right side for example mentioned later ( It is arrange | positioned in the space enclosed by the partition wall 21 comprised from the one surface part by the side of U4 and U5, and the back part which comprises one surface on the left side. In addition, between the carrier station 1 and the processing unit 2, and between the processing unit 2 and the interface unit 3, the temperature and humidity provided with a temperature control device for the processing liquid used in each unit, a duct for temperature and humidity control, and the like. The adjusting unit 22 is arranged.

The interface part 3 is comprised from the 1st conveyance chamber 3A and the 2nd conveyance chamber 3B provided before and after between the process part 2 and the exposure part 4, respectively, and the 1st wafer conveyance part 30A and the second wafer transfer section 30B are provided.

The shelf units U1, U2, and U3 have a configuration in which various units for pre- and post-treatment of the processes performed in the liquid processing units U4 and U5 are stacked in multiple stages, for example, 10 stages. The combination includes a heating unit HP for heating (baking) the wafer W, a cooling unit CPL for cooling the wafer W, and the like. Further, the liquid processing units U4 and U5 are, for example, a bottom antireflection film coating unit (BCT) 23 for applying an antireflection film onto a chemical solution storage part such as a resist or a developer, as shown in FIG. 2. The unit (COT) 24 and the developing unit (DEV) 25 for developing and supplying the developing solution to the wafer W are stacked in multiple stages, for example, five stages. A substrate cleaning apparatus which is a liquid processing apparatus according to the present invention is provided in a developing unit (DEV) 25.

Next, the flow of the wafer W in the above processing system will be briefly described. First, when the carrier 10 in which the wafer W is housed from the outside is placed on the mounting portion 11, the cover body of the carrier 10 is separated together with the opening and closing portion 12, and is transferred by the transfer means A1. The wafer W is taken out. Then, the wafer W is transferred to the main transport means A2 via the transfer unit forming one end of the shelf unit U1, and in one shelf in the shelf units U1 to U2, the antireflection film as a pretreatment of the coating process. Formation or temperature adjustment of the substrate by the cooling unit is performed.

Thereafter, the wafer W is carried into the coating unit (COT) 24 by the main transport means A2, and a resist film is formed on the surface of the wafer W. As shown in FIG. The wafer W on which the resist film is formed is carried out to the outside of the coating unit (COT) 24 by the main transport means A2, and brought into the heating unit to be baked at a predetermined temperature. After the baking process is completed, the wafer W is cooled in the cooling unit and then loaded into the interface unit 3 via the transfer unit of the shelf unit U3, and exposed to the exposure unit 4 via the interface unit 3. Are imported into). In addition, when apply | coating the protective film for liquid immersion exposure on a resist film, after cooling by the said cooling unit, application | coating of the chemical | medical agent for protective films is performed by the unit which is not shown in the processing part 2. Thereafter, the wafer W is carried into the exposure unit 4 and liquid immersion exposure is performed. At this time, you may make it wash | clean in the board | substrate cleaning apparatus of this invention not shown provided in the interface part 3 before liquid immersion exposure.

The wafer W which has completed the liquid immersion exposure is taken out from the exposure unit 4 by the second wafer transfer unit 30B and carried into the heating unit PEB forming one end of the shelf unit U6. Thereafter, the wafer W is carried out from the heating unit PEB by the first wafer transfer section 30A and transferred to the main transport means A3. Then, the main transport means A3 is carried into the developing unit 25. In the developing unit 25, the substrate is developed by the substrate cleaning apparatus according to the present invention which is also used for the development treatment, and further cleaning is performed. Thereafter, the wafer W is carried out from the developing unit 25 by the main transport means A3, and the original carrier on the mounting portion 11 is passed through the main transport means A2 and the transfer means A1. 10) is returned.

≪ Embodiment 1 >

An embodiment in which the substrate cleaning apparatus of the present invention is combined with a developing apparatus will be described with reference to FIGS. 3 and 4.

As shown in FIG. 3 and FIG. 4, the substrate cleaning apparatus 100 suctions and sucks the central portion of the back surface of the wafer W into the casing 26 to hold the spin chuck 30, which is a substrate holding portion for holding in the horizontal position. Equipped. The spin chuck 30 is connected to, for example, a rotating mechanism 32 such as a servo motor via the shaft portion 31, and can be rotated while the wafer W is held by the rotating mechanism 32. It is configured to. Moreover, the rotation mechanism 32 is electrically connected to the control part 90a of the control computer 90 which is a control means, and the rotation speed of the spin chuck 30 is controlled based on the control signal from the control computer 90. . In the casing 26, the carry-in and out ports 27 of the wafer W are formed, and the shutter 28 is provided to be opened and closed.

The cup body 40 which opens the upper side so that the side of the wafer W on the said spin chuck 30 may be provided is provided. This cup body 40 consists of a cylindrical outer cup 41 and a cylindrical inner cup 42 whose upper side is inclined inward, and is connected to the lower end of the outer cup 41, for example, a lifting mechanism such as a cylinder. The outer cup 41 is lifted and lowered by the 43, and the inner cup 42 is configured to be pressed against the end formed on the inner peripheral surface of the lower end side of the outer cup 41 so as to be lifted. Moreover, the lifting mechanism 43 is electrically connected to the control computer 90, and is comprised so that the outer cup 41 may raise and lower based on the control signal from the control computer 90. FIG.

Moreover, the circular plate 44 is provided below the spin chuck 30, and the liquid receiving part 45 in which the cross section was formed in the recessed part shape is provided in the outer side of this circular plate 44 over the perimeter. A drain discharge port 46 is formed at the bottom of the liquid receiver 45, and the developer or the cleaning liquid overflowed from the wafer W or shaken off and stored in the liquid receiver 45 is the drain discharge port 46. It is discharged to the outside of the device via. Moreover, the ring member 47 of cross-sectional mountain shape is provided in the outer side of the circular plate 44. Moreover, the lifting pin (not shown) which is three board | substrate support pins which penetrate the circular plate 44, for example is provided, and the wafer W is cooperated with this lifting pin and the board | substrate conveying means (not shown). Is configured to be delivered to the spin chuck 30.

On the other hand, on the upper side of the wafer W held by the spin chuck 30, a developing solution nozzle 50, a cleaning solution nozzle 60 which is a first processing solution supply section for supplying a processing solution, for example, a cleaning solution to the wafer surface, A dry region D is formed by discharging (supplying) a gas, which is a drying fluid, for example, N ₂ (nitrogen), Ar (argon) or the like, to a liquid film formed by the supply of the cleaning liquid from the cleaning liquid nozzle 60. The second gas nozzle 80 as the second dry fluid supply unit for removing the cleaning liquid containing the dissolved product remaining between the first gas nozzle 70 as the first dry fluid supply unit and the circuit pattern in the drying region D It is installed to move up and down and move horizontally.

The developing solution nozzle 50 is, for example, a wafer W held by the spin chuck 30, and has a slit-shaped discharge port 50A for supplying the developing solution in a band shape. 50 A of this discharge ports are arrange | positioned so that the longitudinal direction may follow the radial direction of the wafer W. As shown in FIG. The developing solution nozzle 50 is connected to the developing solution supply source 53 via a developing solution supply pipe 51 provided with a flow rate regulator 52 therebetween. The flow rate and supply time of the developing solution are adjusted by, for example, a flow rate regulator 52 such as a flow rate adjustment valve.

Moreover, the developing solution nozzle 50 is supported by the one end side of the nozzle arm 55 which is a support member, and the other end side of this nozzle arm 55 is connected with the movement base 56 provided with the lifting mechanism not shown. . The moving base 56 is, for example, a nozzle moving mechanism 200 made of, for example, a ball screw mechanism or a timing belt mechanism along the guide member 57 extending in the X direction from the bottom of the casing 26. It is comprised so that a movement to a horizontal direction is possible. Moreover, the atmospheric part 58 of the developing solution nozzle 50 is provided in one outer side of the cup body 40, and the atmospheric part 58 wash | cleans a nozzle tip part, etc. are performed.

Moreover, the washing | cleaning liquid nozzle 60 is provided above the spin chuck 30, and is connected to the washing | cleaning liquid supply source 63 via the washing | cleaning liquid supply pipe 61 provided through the flow regulator 62. FIG. The flow rate and supply time of the cleaning liquid are adjusted by, for example, a flow rate regulator 62 such as a flow rate adjustment valve.

A temperature regulator (not shown) mounted with a heating device such as a heater is connected to the cleaning liquid supply source 63, for example, to adjust the cleaning liquid to a predetermined temperature. In addition, the cleaning liquid supply pipe 61 includes a flow regulator 62 and is surrounded by a temperature holding member (not shown) made of a heat insulating member or the like, and supplies the cleaning liquid from the cleaning liquid nozzle 60 onto the wafer W. Until that time, the cleaning liquid is kept at a predetermined temperature.

4, the cleaning liquid nozzle 60 is fixed to the nozzle arm 66 via the nozzle holding | maintenance part 65, and this nozzle arm 66 is a moving base provided with a lifting mechanism ( 67). This movement base 67 is transversely, for example, by the nozzle movement mechanism 300 which consists of a ball screw mechanism, a timing belt mechanism, etc., without interfering with the developing solution nozzle 50 along the guide member 57A, for example. It is comprised so that a movement to a direction is possible. Moreover, the atmospheric part 68 of the washing | cleaning liquid nozzle 60 is provided in the outer side of the other side of the atmospheric part 58 of the developing solution nozzle 50 of the cup body 40.

The first gas nozzle 70 is connected to the gas supply source 73 via a gas supply pipe 71 provided with a gas flow rate regulator 72. Moreover, the 1st gas nozzle 70 is fixed to the nozzle holding part 65 common to the washing | cleaning liquid nozzle 60, for example, so that it may move integrally with the washing | cleaning liquid nozzle 60 by the nozzle arm 66. Consists of.

On the other hand, the 2nd gas nozzle 80 is connected to the gas supply source 83 through the gas supply pipe 81 which provided the gas flow regulator 82 through. Moreover, the 2nd gas nozzle 80 is being fixed to the nozzle arm 86 through the nozzle holding part 85, and this nozzle arm 86 is connected with the movement base 87 provided with the lifting mechanism. . The movement base 87 does not interfere with, for example, the developer nozzle 50, the cleaning liquid nozzle 60, and the first gas nozzle 70 along the guide member 57A by the nozzle movement mechanism 400. It is comprised so that a movement to a horizontal direction is possible. Moreover, the atmospheric position 88 of the 2nd gas nozzle 80 is provided in the outer side of the other part of the atmospheric part 68 of the washing | cleaning liquid nozzle 60 of the cup body 40.

Nozzle movement mechanisms 300 and 400 for moving the nozzle moving mechanism 200, the cleaning liquid nozzle 60, the first gas nozzle 70, and the second gas nozzle 80 for moving the developer nozzle 50, The rotating mechanism 32 which rotates the spin chuck 30, the lifting mechanism 43 of the cup body 40, and the flow regulators 52, 62, 72, 82 which adjust the flow volume of the developing solution, the washing | cleaning liquid, and gas are the control part 90a. Is controlled by

The control unit 90a is incorporated in the control computer 90, and the control computer 90 stores, in addition to the control unit 90a, a program for executing each processing step in an operation to be described later performed by the substrate cleaning apparatus 100. The control program storage unit 90b and the reading unit 90c are incorporated. In addition, the control computer 90 is inserted into and mounted on the input unit 90e connected to the control unit 90a, the display unit 90d for displaying the processing process screen for creating the processing process, and the reading unit 90c. The computer-readable storage medium which stores the software which makes a control program run in the control computer 90 is provided, and is comprised so that a control signal may be output to each said part based on a control program.

The control program is also stored in a storage medium 90f such as a hard disk, compact disk, flash memory, flexible disk, memory card, etc., which is installed and used in the control computer 90 from the storage medium 90f.

Next, the operation aspect of the board | substrate cleaning apparatus 100 comprised as mentioned above is demonstrated. First, when the wafer W is not carried into the substrate cleaning apparatus 100, the outer cup 41 and the inner cup 42 are in the lowered position, the developer nozzle 50, the cleaning liquid nozzle 60, and the first gas. The nozzle 70 and the second gas nozzle 80 are each waiting at a predetermined waiting position. In the processing system, when the wafer W after the liquid immersion exposure has been heated and brought into the substrate cleaning apparatus 100 by the main transport means A3 (see FIG. 1), the main transport means A3 and The wafer W is transferred to the spin chuck 30 by the cooperative action with the lifting pins (not shown).

Thereafter, the outer cup 41 and the inner cup 42 are set to the raised position, the developer is supplied from the developer nozzle 50 onto the wafer W, and the developer is supplied by a known method. In this embodiment, at the start of supply of the developer, the developer nozzle 50 is disposed above the periphery of the wafer W, for example, several mm above the surface of the wafer W. For example, while rotating the wafer W at a rotational speed of, for example, 1000 to 1200 rpm, and discharging the developer from the developer nozzle 50 in a band shape, the developer nozzle 50 is directed from the peripheral edge of the wafer W to the center portion. Move it. The developer discharged in the form of a strip from the developer nozzle 50 is arranged so that there is no gap from the outside of the wafer W toward the inside, whereby the developer is supplied to the entire surface of the wafer W in a spiral shape. Then, the developing solution diffuses outward along the surface of the wafer W by the centrifugal force caused by the rotation of the wafer W, thereby forming a thin film liquid film. In this way, the soluble site | part of a resist melt | dissolves in a developing solution, and an insoluble site | part remains and a circuit pattern is formed.

Subsequently, the cleaning liquid nozzle 60 is disposed above the central portion of the wafer W so as to be replaced with the developing liquid nozzle 50, and the cleaning liquid nozzle 60 is promptly immediately after the developing liquid nozzle 50 stops the supply of the developing liquid. The cleaning liquid L is discharged from the wafer W, and the surface of the wafer W is cleaned. Below, this washing process is demonstrated in detail with reference to FIGS. 5A-5C. The washing process of this embodiment is performed by the following steps.

(Step (1)) The cleaning liquid nozzle 60 is disposed above the central portion of the wafer W, for example, at a position 15 mm above the surface of the wafer W. While rotating the spin chuck 30 at, for example, 1000 rpm, a washing liquid L such as pure water, for example, 350 mL / min, from the cleaning liquid nozzle 60 to the center of the wafer W, for example. Discharge (supply), for example, for 5 seconds by flow rate. The cleaning liquid L is diffused from the center of the wafer W toward the periphery by centrifugal force, and the developing solution is replaced by the cleaning liquid L. As shown in FIG. In this way, the liquid film of the washing | cleaning liquid L is formed in the whole surface of the wafer W. As shown in FIG.

(Step (2)) Next, while rotating the spin chuck 30 at a rotation speed of 1500 rpm or more, for example, 2500 rpm, the nozzle arm 66 (see FIG. 4) is moved as shown in FIG. 5A. By moving the cleaning liquid nozzle 60 from the center of the wafer W toward the periphery of the wafer W by a predetermined distance, and further following the cleaning liquid nozzle 60, the N ₂ gas is discharged from the first gas nozzle 70. While discharging (supplying), it moves from the center of the wafer W to the periphery to a position on the concentric circle with the second N ₂ gas supply starting position set to a position which does not interfere with the cleaning liquid nozzle 60 and the first gas nozzle 70. . In this way, the cleaning liquid L is supplied from the cleaning liquid nozzle 60 from the center of the wafer W toward the periphery of the wafer W to form the liquid film of the cleaning liquid L, and also follows the supply of the cleaning liquid L. N ₂ gas is blown from the first gas nozzle 70 to make the liquid film thin and removed to form a dry region D (see FIG. 5A). In addition, the dry area | region D means the area | region where the surface of the wafer W was exposed by the evaporation of the washing | cleaning liquid L, and also includes the case where the washing | cleaning liquid L remains between the circuit patterns of the wafer W here. The core of this dry region D diffuses from the center to the supply position of the washing liquid L by centrifugal force.

(Step (3)) As described above, the cleaning liquid nozzle 60 and the first gas nozzle 70 were moved from the center of the wafer W to the position on the concentric circle with the second N ₂ gas supply starting position toward the peripheral portion. when, the N ₂ gas to the interface of the second gas nozzle (80) was first moved to the second N ₂ gas supply start position from the standby position 88, the second gas-nozzle liquid film and the drying zone (D) from 80 While discharging (supplying), the second gas nozzle 80 is moved concentrically toward the periphery of the wafer W together with the cleaning liquid nozzle 60 and the first gas nozzle 70 (see FIG. 5B). In this case, the moving speed V of the cleaning liquid nozzle 60 and the first gas nozzle 70 and the moving speed V of the second gas nozzle 80 are the same, and the first gas nozzle 70 and the first gas nozzle 70 are made to be the same. The discharge (supply) position of the N ₂ gas of the two gas nozzles 80 is synchronized. In this way, by moving the first and second gas nozzles 70 and 80 concentrically up to the periphery of the wafer W, liquid collapse or liquid splitting at the interface between the liquid film and the dry region D can be controlled. The residue of the cleaning liquid L which is not completely removed by the N ₂ gas discharged from the first gas nozzle 70 can be removed by the N ₂ gas discharged from the second gas nozzle 80 (see FIG. 5C). ).

Further, at the periphery of the wafer W, stopping of the discharge (supply) of the N ₂ gas from the second gas nozzle 80 is performed before stopping the discharge (supply) of the N ₂ gas from the first gas nozzle 70. You may also In this way, even if the discharge (supply) of the N ₂ gas from the second gas nozzle 80 is stopped, the residue of the cleaning liquid L can be shaken off by the centrifugal force of the peripheral portion of the wafer W.

In the above-described series of steps (1, 2, 3), the control computer 90 reads the control program stored in the memory of the control computer 90, and operates each described mechanism based on the read command. Is executed by outputting a control signal.

According to the first embodiment, after the development on the wafer W on which the fine and high aspect ratio circuit pattern P is formed, the cleaning liquid nozzle 60 is rotated about the central axis while holding the wafer W horizontally. From the first gas nozzle 70 while discharging (supplying) the cleaning liquid L to the center of the surface of the wafer W to form a liquid film on the surface of the wafer W, and then rotating the wafer W. The N ₂ gas is discharged (supplied) from the center of the surface of the wafer W toward the periphery of the wafer W to remove the liquid film on the surface of the wafer W to form a dry region D. Thereafter, while the wafer W is rotated, the second N ₂ gas is set to a position where the cleaning liquid nozzle 60 and the first gas nozzle 70 do not interfere with the cleaning liquid nozzle 60 and the first gas nozzle 70. when you go to the location on the supply start position and concentric, the second N ₂ gas supply start supplying N ₂ gas to the interface between the liquid film and drying area (D) from the second gas nozzle (80) to move toward the peripheral portion from the position and Further, by moving the cleaning liquid nozzle 60, the first gas nozzle 70, and the second gas nozzle 80 concentrically, the liquid film and liquid film formed on the surface of the wafer W are removed to remove the dry region D. The interface is controlled to remove (discharge) the cleaning liquid L remaining between the circuit patterns in the dry region D. FIG. By this structure of the first embodiment, a high cleaning effect can be realized and the development defect can be reduced to a state close to none. In addition, in the first embodiment, the second by the gas nozzle (80) N ₂ gas to the discharge (supply) the drying zone (D) to remove (discharge) the cleaning liquid (L) remaining between the circuit patterns in from the wafer (W ) Can be accelerated. Thereby, the moving speed of the washing | cleaning liquid nozzle 60 can be raised. In this way, an effective washing | cleaning can be performed in a short time.

≪ Embodiment 2 >

The second embodiment is a case in which a plurality of second gas nozzles 80 are provided (in this case, two cases are shown) so that the drying efficiency can be improved and the residue of the cleaning liquid L can be reliably removed. In this case, the two second gas nozzles 80 are provided at two positions symmetrical with respect to the center line of the wafer W in the nozzle arm 86, and the two second gas nozzles 80 are controlled by the control unit 90a. The gas nozzle 80 is configured to be located on the concentric circle of the wafer W in response to the movement of the first gas nozzle 70.

In the second embodiment, other parts are the same as in the first embodiment, and the same parts are given the same reference numerals, and description thereof is omitted.

The substrate cleaning method by the liquid processing apparatus (method) of the second embodiment configured as described above will be briefly described with reference to FIGS. 6A to 6C. In addition, in this embodiment, since step (1) and step (2) are the same as in the first embodiment, the same reference numerals are given to the same parts, and description thereof is omitted.

(Step 3a) The cleaning liquid nozzle 60 and the first gas nozzle 70 are set to positions not interfering with the cleaning liquid nozzle 60 and the first gas nozzle 70 from the center of the wafer W toward the periphery. When the second N ₂ gas supply start position and the concentric circle are moved, the two second gas nozzles 80 are moved from the standby position 88 to the second N ₂ gas supply start position, and the two second gases are moved. Two second gas nozzles 80 together with the cleaning liquid nozzle 60 and the first gas nozzle 70 while discharging (supplying) N ₂ gas from the nozzle 80 to the interface between the liquid film and the drying area D. It moves concentrically toward the periphery of the wafer W (refer FIG. 6B). At this time, the moving speed V of the cleaning liquid nozzle 60 and the first gas nozzle 70 and the moving speed V of the second gas nozzle 80 are controlled to be the same, so that the first gas nozzle 70 and the first gas nozzle 70 are controlled. Two second gas nozzles 80 are positioned on the concentric circles of the wafer W.

In this way, by moving the first gas nozzle 70 and the two second gas nozzles 80 concentrically to the periphery of the wafer W, liquid collapse or liquid splitting at the interface between the liquid film and the dry region D is achieved. can be controlled, the removal of the residues of the cleaning liquid (L) is not completely removed by the N ₂ gas ejected from the first gas nozzle 70 to the two first N ₂ gas discharged from the second gas nozzle (80) (See FIG. 6C). Therefore, the N ₂ gas discharged (supplied) from the two second gas nozzles 80 to the surface of the wafer W can be efficiently sprayed on the interface between the liquid film and the dry region D, thereby improving drying efficiency and The drying time can be shortened.

In the above-described series of steps (1, 2, 3a), the control computer 90 reads the control program stored in the memory of the control computer 90, and operates each mechanism described based on the read command. Is executed by outputting a control signal.

≪ Third Embodiment >

The third embodiment uses the convex arc-shaped second gas nozzle 80A toward the periphery of the wafer W instead of the second gas nozzle 80 in the first embodiment. As described above, the second gas nozzle 80A formed in the convex arc shape toward the periphery of the wafer W is similarly formed in the convex arc shape, and N discharged from the second gas nozzle 80A. _It is comprised so that the cross section of ₂ gas may be made circular arc shape.

In the third embodiment, other parts are the same as in the first embodiment, and the same parts are assigned the same reference numerals, and description thereof is omitted.

The substrate cleaning method by the liquid processing apparatus (method) of the third embodiment configured as described above will be briefly described with reference to FIGS. 7A to 7C. In addition, in this embodiment, since step (1) and step (2) are the same as in the first embodiment, the same reference numerals are given to the same parts, and description thereof is omitted.

(Step 3b) The cleaning liquid nozzle 60 and the first gas nozzle 70 are set to positions not interfering with the cleaning liquid nozzle 60 and the first gas nozzle 70 from the center of the wafer W toward the periphery. When the second N ₂ gas supply start position and the concentric circle are moved, the second gas nozzle 80A is moved from the standby position 88 to the second N ₂ gas supply start position, and the second gas nozzle 80A is moved. The second gas nozzle 80A together with the cleaning liquid nozzle 60 and the first gas nozzle 70 together with the cleaning liquid nozzle 60 and the first gas nozzle 70 while discharging (supplying) N ₂ gas to the interface between the liquid film and the dry region D from the circular cross-sectional shape. It moves concentrically toward the periphery of (W) (refer FIG. 7B). In this way, by moving the first and second gas nozzles 70 and 80A concentrically to the periphery of the wafer W, liquid collapse or liquid splitting at the interface between the liquid film and the dry region D can be controlled. The residue of the cleaning liquid L which is not completely removed by the N ₂ gas discharged from the first gas nozzle 70 can be removed by the N ₂ gas discharged from the second gas nozzle 80A (FIG. 7C). . Therefore, the N ₂ gas discharged (supplied) from the second gas nozzle 80A to the surface of the wafer W can be efficiently sprayed on the arc-shaped interface between the liquid film and the dry region D, thereby improving the drying efficiency. And shortening of drying time is aimed at.

In the above-described series of steps (1, 2, 3b), the control computer 90 reads the control program stored in the memory of the control computer 90, and operates each mechanism described based on the read command. Is executed by outputting a control signal.

<Fourth Embodiment>

Next, a fourth embodiment of the substrate cleaning apparatus and method according to the present invention will be described with reference to FIGS. 8 to 10C. The fourth embodiment includes a cleaning liquid nozzle 60 (hereinafter referred to as a first cleaning liquid nozzle 60), a first gas nozzle 70, and a second gas nozzle in the substrate cleaning apparatus used in the first embodiment. In addition to 80, at the interface between the liquid film and the dry region D, a second cleaning liquid nozzle 60A for discharging (supplying) a cleaning liquid L, such as pure water, is provided on the surface of the wafer W, for example. If it is.

In this case, 60 A of 2nd cleaning liquid nozzles are being fixed to the nozzle holding part 85 common to 2nd gas nozzle 80, and are integral with 2nd gas nozzle 80 by nozzle arm 86. In FIG. It is configured to go to.

Moreover, 60 A of 2nd cleaning liquid nozzles are connected to 63 A of cleaning liquid supply sources through 61 A of cleaning liquid supply pipes which provided 62 A of flow regulators. The flow rate and the supply time of the cleaning liquid are adjusted by a flow regulator 62A such as a flow regulating valve. In addition, a temperature regulator (not shown) mounted with a heating device such as a heater is connected to the cleaning liquid supply source 63A, for example, to adjust the cleaning liquid to a predetermined temperature. In addition, the cleaning liquid supply pipe 61A is surrounded by a temperature holding member (not shown), which includes a flow regulator 62A, and constitutes a heat insulating member, and the like, and the cleaning liquid onto the wafer W from the second cleaning liquid nozzle 60A. The cleaning liquid is maintained at a predetermined temperature until the N is supplied.

In the fourth embodiment, other parts are the same as in the first embodiment, and the same parts are assigned the same reference numerals, and description thereof is omitted.

The substrate cleaning method by the liquid processing apparatus (method) of the fourth embodiment configured as described above will be briefly described with reference to FIGS. 8 to 10C. In addition, in this embodiment, since step (1) and step (2) are the same as in the first embodiment, the same reference numerals are given to the same parts, and description thereof is omitted.

(Step 3c) As described above, the first cleaning liquid nozzle 60 and the first gas nozzle 70 are moved from the center of the wafer W toward the periphery of the first cleaning liquid nozzle 60 and the first gas nozzle ( When the second cleaning liquid supply starting position and the second N ₂ gas supply starting position are moved to a position concentric with the second N ₂ gas supply starting position set to a position that does not interfere with 70), the second cleaning liquid nozzle 60A and the second gas nozzle 80 are waited. The cleaning liquid L is moved from the position 88 to the second cleaning liquid supply start position and the second N ₂ gas supply starting position, and the cleaning liquid L is disposed on the interface between the liquid film and the dry region D from the second cleaning liquid nozzle 60A. Discharge (supply) an amount (e.g., 250 mL / min) less than the discharge amount (350 mL / min) from the nozzle 60, and further discharge the liquid film and the dry area D from the second gas nozzle 80. discharging the N ₂ gas in the interface (supply), a second cleaning nozzle (60A) and the second gas-nozzle of claim 1, the cleaning liquid nozzles 60 to 80 and 1 towards the periphery of the wafer (W) with the gas nozzle 70 is moved to the parts of concentric circles (see Fig. 10b).

In this case, the moving speed V of the first cleaning liquid nozzle 60 and the first gas nozzle 70 and the moving speed V of the second cleaning liquid nozzle 60A and the second gas nozzle 80 are the same. The discharge (supply) positions of the N ₂ gas of the first gas nozzle 70 and the second gas nozzle 80 are synchronized. In this way, the liquid film and the drying area D are moved by moving the first and second cleaning liquid nozzles 60 and 60A and the first and second gas nozzles 70 and 80 concentrically to the periphery of the wafer W. The liquid collapse or liquid splitting at the interface of the liquid crystal can be controlled, and the residue of the cleaning liquid L which is not completely removed by the N ₂ gas discharged from the first gas nozzle 70 is discharged from the second gas nozzle 80. It can be removed by N ₂ gas (see FIG. 10C).

According to the fourth embodiment, after the development on the wafer W on which the fine and high aspect ratio circuit pattern P is formed, the first cleaning liquid nozzle is rotated about the central axis while holding the wafer W horizontally. The cleaning liquid L is discharged (supplied) in the center of the surface of the wafer W from the 60 to form a liquid film on the surface of the wafer W, and then the first gas nozzle 70 is rotated while the wafer W is rotated. ) N ₂ gas is discharged (supplied) toward the periphery of the wafer (W) from the center of the surface of the wafer (W) from the surface by removing the liquid film of the wafer (W) to form a drying zone (D). Thereafter, while the wafer W is rotated, the first cleaning liquid nozzle 60 and the first gas nozzle 70 are set to positions which do not interfere with the first cleaning liquid nozzle 60 and the first gas nozzle 70. 2, the cleaning liquid supply start position and a second N ₂ gas supply start position and when you go to the location on the concentric circle, and the second cleaning liquid supply start position and a second N _2, a second cleaning nozzle moving toward the peripheral portion from the start of the gas supply location (60A ) Discharges (supplies) the cleaning liquid L to the interface between the liquid film and the dry region D, and supplies the N ₂ gas from the second gas nozzle 80 to the interface between the liquid film and the dry region D. 1 By moving the cleaning liquid nozzle 60 and the first gas nozzle 70, the second cleaning liquid nozzle 60A and the second gas nozzle 80 concentrically, the liquid film and liquid film formed on the surface of the wafer W are removed. Circuit in the dry region D by controlling the interface of the formed dry region D Remove (discharge) the cleaning liquid (L) between the remaining turns. According to this configuration of the fourth embodiment, the cleaning liquid L adhering to the exposed portion having the hydrophobicity after exposure and development using the water repellent protective film is applied to the N ₂ gas discharged (supplied) from the second gas nozzle 80. Cleaning liquid L that can be removed by the second cleaning liquid nozzle 60A by the liquid separation of the liquid film formed by the non-exposed part having hydrophobicity and the liquid film on the interface of the dry region D from the second cleaning liquid nozzle 60A. ), The interface between the liquid film and the dry region D can be controlled. Therefore, a high washing | cleaning effect can be implement | achieved and development defect can be reduced to near state. Thereby, the moving speed of the 1st washing | cleaning liquid nozzle 60 can be raised, and an effective washing | cleaning can be performed in a short time.

In the above-described series of steps (1, 2, 3c), the control computer 90 reads the control program stored in the memory of the control computer 90, and operates each mechanism described based on the read command. Is executed by outputting a control signal.

<Fifth Embodiment>

Next, a fifth embodiment of the substrate cleaning apparatus and method according to the present invention will be described with reference to Figs. 11 to 13C. The substrate cleaning apparatus and method according to the fifth embodiment are applied when the liquid treatment surface of the wafer W has a large hydrophobicity, and the second gas nozzle 80 in the substrate cleaning apparatus used in the first embodiment. Is a case where a second cleaning liquid nozzle 60A for discharging (supplying) a cleaning liquid L such as pure water is provided on the surface of the wafer W instead of the liquid film and the dry region D). . That is, the substrate cleaning apparatus of the fifth embodiment includes the cleaning liquid nozzle 60 (hereinafter referred to as the first cleaning liquid nozzle 60) for supplying the cleaning liquid to the wafer surface, and the cleaning liquid from the first cleaning liquid nozzle 60. Drying with the first gas nozzle 70 and the liquid film which form a drying area D by discharging an inert gas such as N ₂ (nitrogen), Ar (argon) or the like as a drying fluid to the liquid film formed by the supply. This is a case where the second cleaning liquid nozzle 60A is provided to discharge (supply) the cleaning liquid to the boundary surface of the region to repair the collapse or liquid splitting of the liquid film on the boundary surface.

In this case, 60 A of 2nd cleaning liquid nozzles are being fixed to the nozzle arm 66A via the nozzle holding part 65A as shown in FIG. 12, and this nozzle arm 66A is equipped with the lifting mechanism. It is connected to the moving base 67A. By this nozzle movement mechanism 400 which consists of 67 A of movement bases, for example, a ball screw mechanism, a timing belt mechanism, etc., it does not interfere with the developing solution nozzle 50 along the guide member 57A, for example, and is transversely. It is configured to be movable. Moreover, on the other outside of the atmospheric part 58 of the developing solution nozzle 50 of the cup body 40, the atmospheric part (standby position) 68A of the 2nd washing liquid nozzle 60A is provided.

Moreover, 60 A of 2nd cleaning liquid nozzles are connected to 63 A of cleaning liquid supply sources through 61 A of cleaning liquid supply pipes which provided 62 A of flow regulators. The flow rate and the supply time of the cleaning liquid are adjusted by a flow regulator 62A such as a flow regulating valve. In addition, a temperature regulator (not shown) mounted with a heating device such as a heater is connected to the cleaning liquid supply source 63A, for example, to adjust the cleaning liquid to a predetermined temperature. In addition, the cleaning liquid supply pipe 61A is surrounded by a temperature holding member (not shown), which includes a flow regulator 62A, and constitutes a heat insulating member, and the like, and the cleaning liquid onto the wafer W from the second cleaning liquid nozzle 60A. The cleaning liquid is maintained at a predetermined temperature until the N is supplied.

In the fifth embodiment, other parts are the same as in the first embodiment, and the same parts are assigned the same reference numerals, and description thereof is omitted.

The substrate cleaning method by the liquid processing apparatus (method) of the fifth embodiment configured as described above will be briefly described with reference to FIGS. 11 to 13C. In addition, in this embodiment, since step (1) and step (2) are the same as in the first embodiment, the same reference numerals are given to the same parts, and description thereof is omitted.

(Step 3d) As described above, the first cleaning liquid nozzle 60 and the first gas nozzle 70 are moved from the center of the wafer W toward the periphery of the first cleaning liquid nozzle 60 and the first gas nozzle. When the second cleaning liquid supply start position and the concentric circle are set to a position which does not interfere with 70, the second cleaning liquid nozzle 60A is moved from the standby position 68A to the second cleaning liquid supply starting position, and 2 The amount of the cleaning liquid L from the cleaning liquid nozzle 60A to the interface between the liquid film and the drying area D is less than the discharge amount from the first cleaning liquid nozzle 60 (350 mL / minute) (for example, 250 mL / minute). ), The second cleaning liquid nozzle 60A is moved concentrically toward the periphery of the wafer W together with the first cleaning liquid nozzle 60 and the first gas nozzle 70 (see FIG. 13B). ).

In this case, the moving speed V of the 1st cleaning liquid nozzle 60 and the 1st gas nozzle 70 and the moving speed V of the 2nd cleaning liquid nozzle 60A are made the same, and the 1st cleaning liquid nozzle 60 is carried out. And the discharge (supply) position of the cleaning liquid L of the second cleaning liquid nozzle 60A are synchronized.

In this manner, the boundary surface between the liquid film and the dry region D is moved by moving the first cleaning liquid nozzle 60, the first gas nozzle 70, and the second cleaning liquid nozzle 60A concentrically to the periphery of the wafer W. Can control liquid collapse or liquid splitting. In addition, the cleaning liquid L which is not completely removed by the N ₂ gas discharged (supplied) from the first gas nozzle 70 remains in the exposed portion, but is removed (discharged) by centrifugal force due to the rotation of the wafer W. (See FIG. 13C).

According to the fifth embodiment, the development is performed on the wafer W on which the fine and high aspect ratio circuit pattern P is formed, in particular, using a super water-repellent resist, and then the wafer W is held horizontally and centered about the central axis. While rotating, the cleaning liquid L is discharged (supplied) from the first cleaning liquid nozzle 60 to the center of the surface of the wafer W to form a liquid film on the surface of the wafer W, and then the wafer W is rotated. From the first gas nozzle 70, the N ₂ gas is discharged (supplied) from the central portion of the surface of the wafer W toward the periphery of the wafer W to remove the liquid film on the surface of the wafer W to remove the dry region D. Form. Thereafter, while the wafer W is rotated, the first cleaning liquid nozzle 60 and the first gas nozzle 70 are set to positions which do not interfere with the first cleaning liquid nozzle 60 and the first gas nozzle 70. 2 When it moves to the position which is concentric with a washing | cleaning liquid supply start position, the washing | cleaning liquid L is discharged | emitted from the 2nd washing | cleaning liquid nozzle 60A which moves toward a periphery part from a 2nd washing | cleaning liquid supply start position to the boundary surface of a liquid film and a dry area D. (Supply) and move the first cleaning liquid nozzle 60, the first gas nozzle 70, and the second cleaning liquid nozzle 60A in a concentric manner, thereby removing the liquid film and the liquid film formed on the wafer W surface. The interface of the dry region D is controlled to repair liquid collapse or liquid splitting of the liquid film to form an appropriate liquid film. According to this configuration of the fifth embodiment, the amount insufficient due to the liquid splitting between the liquid film produced by the unexposed portion having hydrophobicity after exposure and development using the water repellent protective film and the liquid film on the interface between the dry region D and the second is insufficient. The interface between the liquid film and the dry region D can be controlled by replenishing with the cleaning liquid L discharged (supplied) from the cleaning liquid nozzle 60A. In addition, the cleaning liquid L which is not completely removed by the N ₂ gas discharged (supplied) from the first gas nozzle 70 is attached to the exposure part, and can be removed by centrifugal force due to the rotation of the wafer W. . Therefore, a high washing | cleaning effect can be implement | achieved and development defect can be reduced to near state. Thereby, the moving speed of the 1st washing | cleaning liquid nozzle 60 can be raised, and an effective washing | cleaning can be performed in a short time.

In the above-described series of steps (1, 2, 3d), the control computer 90 reads the control program stored in the memory of the control computer 90, and operates each mechanism described based on the read command. Is executed by outputting a control signal.

<Sixth Embodiment>

Next, a sixth embodiment of the substrate cleaning apparatus and method according to the present invention will be described with reference to Figs. 14A to 14D. In the sixth embodiment, the first cleaning liquid nozzle 60 is moved from the first cleaning liquid nozzle 60 positioned above the center of the wafer W without moving the first cleaning liquid nozzle 60 from the center of the wafer W. The cleaning liquid L is discharged (supplied) on the surface to form a liquid film, and then the cleaning liquid L is removed and dried in the same manner as in the above embodiment. The substrate cleaning apparatus and method according to the sixth embodiment will be described below using the substrate cleaning apparatus having the same structure as that of the first embodiment shown in FIGS. 3 and 4.

In the sixth embodiment, other parts are the same as in the first embodiment, and the same parts are assigned the same reference numerals, and description thereof is omitted.

The cleaning process of the sixth embodiment is performed by the following steps.

(Step (1a)) The 1st cleaning liquid nozzle 60 is arrange | positioned above the center part of the wafer W, for example, at the height of 15 mm from the surface of the wafer W. As shown in FIG. While rotating the spin chuck 30, for example, at a rotational speed of 1000 rpm, the cleaning liquid L is moved from the first cleaning liquid nozzle 60 to the center of the wafer W, for example, at a flow rate of 350 mL / min. For example, it is discharged (supplyed) for 5 seconds. The cleaning liquid L is diffused from the center of the wafer W toward the periphery by centrifugal force, and the developing solution is replaced by the cleaning liquid L. As shown in FIG. In this way, the liquid film of the washing | cleaning liquid L is formed in the whole surface of the wafer W (refer FIG. 14A).

(Step 2a) Subsequently, while rotating the spin chuck 30 at a rotation speed of 1500 rpm or more, for example, 2500 rpm, the nozzle arm 66 moves the first gas nozzle 70 to the wafer W. FIG. A predetermined position is moved from the center of the wafer W toward the periphery of the wafer W while moving upward from the center and discharging (supplying) N ₂ gas from the first gas nozzle 70 to the surface of the wafer W. (See Fig. 14B). In this way, the N ₂ gas is injected from the first gas nozzle 70 from the center of the wafer W toward the periphery of the wafer W, the liquid film is thinned and removed, and the dry region D is formed (Fig. 14b). In addition, the dry area | region D means the area | region where the surface of the wafer W was exposed by the evaporation of the washing | cleaning liquid L, and also includes the case where the washing | cleaning liquid L remains between the circuit patterns of the wafer W here. The core of this dry region D is diffused from the center to the periphery of the wafer W by centrifugal force.

(Step 3e) As described above, the second N ₂ gas supply starts to set the first gas nozzle 70 to a position which does not interfere with the first gas nozzle 70 from the center of the wafer W toward the periphery. When moving to a position concentric with the position, the second gas nozzle 80 is moved from the standby position 88 to the second N ₂ gas supply start position, and the liquid film and the drying area D from the second gas nozzle 80. ), The second gas nozzle 80 is moved concentrically toward the periphery of the wafer W together with the first gas nozzle 70 while discharging (supplying) N ₂ gas (see FIG. 14C). In this case, the moving speed V of the first gas nozzle 70 and the moving speed V of the second gas nozzle 80 are the same, so that the first gas nozzle 70 and the second gas nozzle 80 are the same. The discharge (supply) position of the N ₂ gas is synchronized. In this way, by moving the first and second gas nozzles 70 and 80 concentrically to the periphery of the wafer W, liquid collapse or liquid splitting at the interface between the liquid film and the dry region D can be controlled. The residue of the cleaning liquid L which is not completely removed by the N ₂ gas discharged from the first gas nozzle 70 can be removed by the N ₂ gas discharged from the second gas nozzle 80 (see FIG. 14D). ).

Further, at the periphery of the wafer W, stopping of the discharge (supply) of the N ₂ gas from the second gas nozzle 80 is performed before stopping the discharge (supply) of the N ₂ gas from the first gas nozzle 70. You may also Even in this way, even if the discharge (supply) of the N ₂ gas from the second gas nozzle 80 is stopped, the residue of the cleaning liquid L can be shaken off by the centrifugal force of the peripheral portion of the wafer W.

In the above-described series of steps 1a, 2a, and 3e, the control computer 90 reads the control program stored in the memory of the control computer 90, and operates each mechanism described based on the read command. Is executed by outputting a control signal.

Seventh Example

In the above embodiment, the second gas nozzle 80 or the second gas nozzle 80 and the second cleaning liquid nozzle 60A are formed by the first nozzle liquid 86 and the first cleaning liquid nozzle 60 and the first gas. A case of moving from the second N ₂ gas supply start position (or the second N ₂ gas supply start position and the second cleaning liquid supply start position) set to a position that does not interfere with the nozzle 70 to the peripheral portion of the wafer W will be described. However, the plurality of second gas nozzles 80 or the second gas nozzles 80 and the second cleaning liquid nozzles 60A may be moved in directions not interfering with each other by the nozzle arms 86A and 86B, respectively.

For example, as shown in FIGS. 15A to 15C, two sets of the second gas nozzle 80 and the second cleaning liquid nozzle 60A are provided with respect to the first cleaning liquid nozzle 60 and the first gas nozzle 70. Place at a horizontal position of 120 degrees.

The substrate cleaning method by the liquid processing apparatus (method) comprised in this way is demonstrated briefly with reference to FIGS. 15A-15C. In addition, in this embodiment, since step (1) and step (2) are the same as in the first embodiment, the same reference numerals are given to the same parts, and description thereof is omitted.

(Step 3f) A position where the first cleaning liquid nozzle 60 and the first gas nozzle 70 do not interfere with the cleaning liquid nozzle 60 and the first gas nozzle 70 from the center of the wafer W toward the periphery. When each of the two cleaning liquid supply nozzles 60A and the second gas nozzle 80 is moved to the position at the concentric circle with the second cleaning liquid supply starting position and the second N ₂ gas supply starting position set to, the standby position 88 ) To the second cleaning liquid supply starting position and the second N ₂ gas supply starting position (specifically, a position 120 degrees horizontal to the first cleaning liquid nozzle 60 and the first gas nozzle 70), and the second The cleaning liquid L is discharged (supplied) from the cleaning liquid nozzle 60A to the interface between the liquid film and the dry region D, and N ₂ gas is supplied from the second gas nozzle 80 to the interface between the liquid film and the drying region D. Discharge (supply), and the 2nd cleaning liquid nozzle 60A and the 2nd gas nozzle 80 are the 1st cleaning liquid nozzle 60 and the 1st. Towards the periphery of the wafer (W) with the switch parts of the nozzle 70 is moved in the concentric circles (see Fig. 15b). In this way, the peripheral part of the wafer W is spaced 120 degrees apart from each other with the first cleaning liquid nozzle 60 and the first gas nozzle 70 and the two sets of the second cleaning liquid nozzle 60A and the second gas nozzle 80. By moving concentrically until, liquid collapse or liquid splitting at the interface between the liquid film and the dry region D can be controlled, and the cleaning liquid L not completely removed by the N ₂ gas discharged from the first gas nozzle 70. ) Can be removed by the N ₂ gas discharged from the pair of second gas nozzles 80 (see FIG. 15C). Therefore, the N ₂ gas discharged (supplied) from the two second gas nozzles 80 to the surface of the wafer W can be efficiently sprayed on the interface between the liquid film and the dry region D, thereby improving drying efficiency and The drying time can be shortened.

In addition, instead of the above embodiment, three sets of the second gas nozzle 80 and the second cleaning liquid nozzle 60A are disposed at positions 90 degrees horizontally with respect to the first cleaning liquid nozzle 60 and the first gas nozzle 70. The three sets of second gas nozzles 80 or the second gas nozzles 80 and the second cleaning liquid nozzles 60A may be moved by the nozzle arms 86A, 86B, and 86C in a direction that does not interfere with each other. do.

For example, as illustrated in FIGS. 16A to 16C, three sets of the second gas nozzle 80 and the second cleaning liquid nozzle 60A are horizontal to the first cleaning liquid nozzle 60 and the first gas nozzle 70. Place it at a 90 degree position.

The substrate cleaning method by the substrate cleaning apparatus (method) comprised in this way is demonstrated briefly with reference to FIGS. 16A-16C. In addition, in this embodiment, since step (1) and step (2) are the same as in the first embodiment, the same reference numerals are given to the same parts, and description thereof is omitted.

(Step 3g) The first cleaning liquid nozzle 60 and the first gas nozzle 70 do not interfere with the first cleaning liquid nozzle 60 and the first gas nozzle 70 from the center of the wafer W toward the periphery. When each of the second cleaning liquid supply start position and the second N ₂ gas supply starting position set to the non-positioned position is moved to a position concentric with the second cleaning liquid supply position, each of the three sets of the second cleaning liquid nozzles 60A and the second gas nozzle 80 is a standby position. Move from 88 to the second cleaning liquid supply starting position and the second N ₂ gas supply starting position (specifically, a position 90 degrees horizontal to 180 degrees with respect to the first cleaning liquid nozzle 60 and the first gas nozzle 70). Then, the cleaning liquid L is discharged (supplied) from the second cleaning liquid nozzle 60A to the interface between the liquid film and the dry region D, and from the second gas nozzle 80 to the interface between the liquid film and the drying region D. The N ₂ gas is discharged (supplied), and the second cleaning liquid nozzle 60A and the second gas nozzle 80 are first cleaning liquid nozzles. Together with the 60 and the first gas nozzle 70, they are moved concentrically toward the periphery of the wafer W (see FIG. 16B). Thus, the peripheral part of the wafer W with the 1st cleaning liquid nozzle 60 and the 1st gas nozzle 70, and 3 sets of 2nd cleaning liquid nozzle 60A and the 2nd gas nozzle 80 spaced 90 degree from each other. By moving concentrically until, liquid collapse or liquid splitting at the interface between the liquid film and the dry region D can be controlled, and the cleaning liquid L not completely removed by the N ₂ gas discharged from the first gas nozzle 70. ) Can be removed by the N ₂ gas discharged from the pair of second gas nozzles 80 (see FIG. 16C). Therefore, the N ₂ gas discharged (supplied) from the three second gas nozzles 80 to the surface of the wafer W can be efficiently sprayed on the interface between the liquid film and the dry region D, thereby improving drying efficiency and The drying time can be shortened.

The above-described series of steps (1, 2, 3f, 1, 2, 3g) reads the control program stored in the memory of the control computer 90 by the control computer 90, and describes it based on the read command. It executes by outputting a control signal for operating each mechanism.

Eighth Embodiment

Next, an eighth embodiment of the substrate cleaning apparatus and method according to the present invention will be described with reference to FIGS. 17A to 18. As shown in Fig. 18, in the eighth embodiment, the second dry fluid supply nozzle is an organic solvent ejection nozzle for ejecting a highly volatile organic solvent, for example, isopropyl alcohol (IPA), on the surface of the wafer (W). 80G (hereinafter, referred to as IPA discharge nozzle 80G). In this case, the IPA discharge nozzle 80G is connected to the IPA supply source 80l via an IPA supply pipe 80k provided with a flow rate regulator 80j. In the eighth embodiment, other parts are the same as in the first embodiment, and the same parts are given the same reference numerals, and description thereof is omitted.

According to the eighth embodiment configured as described above, the IPA discharge nozzle 80G is moved from the center of the wafer W to the periphery of the wafer W while the wafer W is rotated. By discharging the IPA, the remaining cleaning liquid L between the circuit patterns in the dry region D can be replaced with IPA to dry out more quickly.

The substrate cleaning method according to the eighth embodiment configured as described above will be briefly described with reference to FIGS. 17A to 18. Incidentally, in the eighth embodiment, steps (1) and (2) are the same as in the first embodiment, and the same parts are assigned the same reference numerals, and description thereof is omitted.

(Step 3h) As shown in FIG. 17A, the first cleaning liquid nozzle 60 and the first gas nozzle 70 are moved from the center of the wafer W toward the periphery of the wafer W, so that the wafer ( The dry region D is formed on the surface of W), and the first cleaning liquid nozzle 60 and the first gas nozzle 70 are moved from the center of the wafer W toward the periphery of the first cleaning liquid nozzle 60 and the first. When moving to the position which is concentric with the 2nd dry fluid (IPA) supply start position set to the position which does not interfere with the gas nozzle 70, IPA discharge located in the standby position 88 with rotating the wafer W The nozzle 80G is moved from the standby position 88 to the second dry fluid (IPA) supply start position, the IPA is discharged (supplied) from the IPA discharge nozzle 80G, and the IPA discharge nozzle 80G is the first cleaning liquid. The nozzle 60 and the first gas nozzle 70 are moved concentrically toward the periphery of the wafer W (see FIG. 17B). Thereby, the washing | cleaning liquid L which remain | survives between the circuit patterns in the dry area | region D is replaced by IPA, and it removes dry (refer FIG. 17B, FIG. 18). In addition, the IPA discharge nozzle 80G moves to the periphery of the wafer W to reliably remove (discharge) the cleaning liquid L remaining between the circuit patterns of the wafer W (see FIG. 17C).

(Step (4)) After the IPA discharge nozzle 80G moves to the periphery of the wafer W to remove (discharge) the cleaning liquid L remaining between the circuit patterns of the wafer W, the wafer W With the rotational speed set at, for example, 2000 rpm, the micro level droplets on the wafer W are shaken off by centrifugal force and dried. At the same time, the first cleaning liquid nozzle 60, the first gas nozzle 70, and the IPA discharge nozzle 80G are returned to the standby position.

In the above-described series of steps (1, 2, 3h, 4), the control computer 90 reads the control program stored in the memory of the control computer 90, and describes each mechanism described based on the read command. It is executed by outputting a control signal for operation.

&Lt; Other Embodiments >

As mentioned above, although this invention was demonstrated with reference to several Example, this invention is not limited to said Example, A various deformation | transformation is possible in the range of the matter contained in an attached claim.

For example, in the first to third embodiments, the case where the second gas nozzles 80 and 80A move from the predetermined position of the wafer W toward the periphery by the one nozzle arm 86 has been described. As in the seventh embodiment, the plurality of (plural tanks) second gas nozzles 80 and 80A may be moved in the radial direction from the center of the wafer W by the plurality of nozzle arms, respectively.

In addition, in the said Example, although the 1st cleaning liquid nozzle 60 and the 1st gas nozzle 70 were integrally fixed to the common nozzle arm 66, you may make it fix to individual nozzle arms, respectively. In this case, since the first gas nozzle 70 is disposed above the surface of the wafer W only when discharging the N ₂ gas, mist or the like of the cleaning liquid L adheres to the first gas nozzle 70. Condensation can be prevented from occurring. In addition, the discharge (supply) amount of the N ₂ gas discharged (supplied) from the first gas nozzle 70 and the second gas nozzles 80 and 80A is the first gas nozzle 70 and the second gas nozzle 80. , 80A) may be gradually or stepwise increased as the position of the wafer W moves to the periphery of the wafer W. FIG. Similarly, the discharge (supply) amounts of the cleaning liquid L discharged (supplied) from the first cleaning liquid nozzle 60 and the second cleaning liquid nozzle 60A are the first cleaning liquid nozzle 60 and the second cleaning liquid nozzle 60A. May be increased gradually or stepwise as the position of () moves to the periphery of the wafer (W).

Moreover, in the said Example, although the case where the liquid processing apparatus (method) which concerns on this invention was applied to the board | substrate cleaning apparatus was demonstrated, this invention carries out processing liquid from the processing liquid supply part to the surface of board | substrates, such as a wafer, in addition to a substrate cleaning apparatus. It can also be applied to a liquid processing apparatus for supplying a liquid film of a processing liquid, supplying a drying fluid from a dry fluid supply unit to the surface of the substrate, removing the liquid film to form a dry region, and drying the process.

Moreover, this invention is applicable not only to a silicon wafer but also to the glass substrate for flat panel displays.

50: developer nozzle
60: 1st cleaning liquid nozzle (1st process liquid supply part)
60A: 2nd cleaning liquid nozzle (2nd processing liquid supply part)
63, 63A: Cleaning solution source
65, 65A, 85: nozzle holding part
66, 66A, 86: nozzle arm
68A, 88: standby position
70: first gas nozzle (first dry fluid supply)
73: N ₂ gas source
80: second gas nozzle (second dry fluid supply)
80G: IPA Discharge Nozzle
90 control computer (control means)
100: substrate cleaning apparatus
300: first cleaning liquid nozzle gas nozzle moving mechanism
400: second cleaning liquid nozzle gas nozzle moving mechanism

Claims (17)

A substrate holding portion that holds the substrate horizontally,
A rotation mechanism for rotating the substrate holding portion about a rotation center axis;
A first processing liquid supply unit for supplying a processing liquid to the surface of the substrate;
A first dry fluid supply unit supplying a dry fluid to the substrate;
A second dry fluid supply unit supplying a dry fluid to the substrate;
A first moving mechanism for moving the first dry fluid supply part from the center of the substrate toward the periphery;
A second moving mechanism for moving the second dry fluid supply portion toward the periphery of the substrate from a second dry fluid supply start position set at a position that does not interfere with the first dry fluid supply portion between the central portion and the peripheral portion of the substrate; ,
A control unit for controlling driving of the rotating mechanism, the first processing liquid supply unit, the first and second dry fluid supply units, and the first and second moving mechanisms,
The control unit supplies the processing liquid from the first processing liquid supply part to the center of the surface of the substrate while rotating the substrate, thereby forming a liquid film, and drying fluid from the first drying fluid supply part toward the periphery of the substrate. Supply to remove the liquid film on the substrate surface to form a dry region, and when the first dry fluid supply portion moves to a position concentric with the second dry fluid supply start position, And a drying fluid is supplied from the second drying fluid supply portion to the peripheral surface of the boundary between the liquid film and the drying region, and the first drying fluid supply portion and the second drying fluid supply portion are moved concentrically. . The method of claim 1,
A plurality of said 2nd dry fluid supply parts are provided, These some 2nd dry fluid supply parts are formed so that a movement is possible by the said 2nd moving mechanism, The liquid processing apparatus characterized by the above-mentioned. The method of claim 1,
And the second dry fluid supply part is formed in a convex arc shape toward the periphery of the substrate. The method according to any one of claims 1 to 3,
And a third moving mechanism for moving the first processing liquid supply portion from the center of the substrate toward the peripheral portion, and controlling the driving of the third moving mechanism by the control portion. 5. The method of claim 4,
The first dry fluid supply part is provided on the rear side with respect to the moving direction of the first processing liquid supply part, and the first dry fluid supply part moves in accordance with the movement of the first processing liquid supply part. Device. 5. The method of claim 4,
And the first moving mechanism and the third moving mechanism are common moving mechanisms. The method according to any one of claims 1 to 3,
And a standby position for allowing the second dry fluid supply unit to stand out from the periphery of the substrate held by the substrate holding unit, and wherein, by the control unit, the first dry fluid supply unit moves from the center of the substrate toward the periphery thereof. The second dry fluid supply part is located at the standby position, and when the first dry fluid supply part moves to a position concentric with the second dry fluid supply start position, the second dry fluid supply part is disposed in the second drying state. And moving to a fluid supply start position, and then moving to a concentric shape. The method according to any one of claims 1 to 3,
The supply of the dry fluid from the second dry fluid supply at the periphery of the substrate is stopped before the supply from the first dry fluid supply. The method of claim 1,
A second processing liquid supply unit supplying the processing liquid to the substrate;
The second processing liquid supply part and the second dry fluid supply part having the second processing liquid supply part as the head and not interfering with the first processing liquid supply part and the first dry fluid supply part between the center of the substrate and the peripheral part; A second moving mechanism for moving from the second processing liquid supply starting position and the second dry fluid supply starting position toward the periphery;
And a control unit for controlling driving of the second processing liquid supply unit and the second moving mechanism,
When the first processing liquid supply unit and the first dry fluid supply unit move to a position concentric with the second processing liquid supply start position and the second dry fluid supply start position by the control unit, the second processing liquid supply starts. The processing liquid is supplied from the position and the second drying fluid supply starting position toward the periphery of the substrate from the second processing liquid supply part to the interface between the liquid film and the drying area, and further supplies a drying fluid from the second drying fluid supply part; And a first processing liquid supply part and a first drying fluid supply part, and a second processing liquid supply part and a second dry fluid supply part in a concentric manner. The method of claim 9,
A plurality of second processing liquid supply units, second dry fluid supply units, and second moving mechanisms are provided. A substrate holding portion that holds the substrate horizontally,
A rotation mechanism for rotating the substrate holding portion about a rotation center axis;
First and second processing liquid supply parts for supplying a processing liquid to the substrate;
A first dry fluid supply unit supplying a dry fluid to the substrate;
A first moving mechanism for moving the first processing liquid supply part and the first dry fluid supplying part from the center of the substrate toward the periphery with the first processing liquid supplying part first;
A second moving mechanism for moving the second processing liquid supply portion from the second processing liquid supply start position that does not interfere with the first processing liquid supply portion and the first dry fluid supply portion between the center of the substrate and the peripheral portion; Wow,
A control unit for controlling driving of the rotating mechanism, the first and second processing liquid supply units, the first dry fluid supply unit, and the first and second moving mechanisms,
The control unit supplies the processing liquid from the first processing liquid supply unit to the center of the surface of the substrate while rotating the substrate to form a liquid film, and further supplies a drying fluid from the first drying fluid supply unit to supply a liquid film on the substrate surface. Is removed to form a dry region, and when the first processing liquid supply portion and the first drying fluid supply portion move to a position concentric with the second processing liquid supply starting position, the substrate is separated from the second processing liquid supply starting position. Supplying the processing liquid from the second processing liquid supply part toward the peripheral edge to the interface between the liquid film and the drying area, and moving the first processing liquid supply part, the first drying fluid supply part and the second processing liquid supply part concentrically; Liquid processing apparatus characterized by the above-mentioned. The method of claim 11,
A plurality of second processing liquid supply units and second moving mechanisms are provided. Holding the substrate horizontally, rotating the center axis of the substrate, and supplying the processing liquid from the first processing liquid supply part to the center of the surface of the substrate to form a liquid film on the surface of the substrate;
Rotating the substrate, supplying a drying fluid from the first center of the substrate to the periphery of the substrate by rotating the substrate to remove the liquid film on the substrate surface to form a dry region;
The second dry fluid supply start position when the first dry fluid supply portion moves to a position concentric with the second dry fluid supply start position set to a position which does not interfere with the first dry fluid supply portion while rotating the substrate. And supplying a drying fluid from the second dry fluid supply part moving toward the periphery to the interface between the liquid film and the drying area, and moving the first dry fluid supply part and the second dry fluid supply part concentrically. A liquid processing method characterized by the above-mentioned. The method of claim 13,
The second processing liquid supply starting position when the first drying fluid supply portion moves to a position concentric with the second processing liquid supply starting position, which is set to a position which does not interfere with the first dry fluid supplying portion while rotating the substrate. A process liquid supplied from the second process liquid supply part moving from the second process liquid supply part toward the peripheral part, and moving from the second dry fluid supply start position toward the peripheral part following the second process liquid supply part; And supplying a dry fluid from the dry fluid supply part to the interface between the liquid film and the drying area, and moving the first dry fluid supply part, the second processing liquid supply part, and the second dry fluid supply part concentrically. A liquid treatment method to use. Holding the substrate horizontally, rotating the center axis of the substrate, and supplying the processing liquid from the first processing liquid supply part to the center of the surface of the substrate to form a liquid film on the surface of the substrate;
Rotating the substrate, supplying a drying fluid from the first center of the substrate to the periphery of the substrate by rotating the substrate to remove the liquid film on the substrate surface to form a dry region;
The second processing liquid supply starting position when the first drying fluid supply portion moves to a position concentric with the second processing liquid supply starting position, which is set to a position which does not interfere with the first dry fluid supplying portion while rotating the substrate. And supplying the processing liquid from the second processing liquid supply part moving from the second processing liquid supply part toward the peripheral edge, and moving the first drying fluid supplying part and the second processing liquid supplying part concentrically. A liquid processing method characterized by the above-mentioned. 16. The method according to any one of claims 13 to 15,
The first processing liquid supply part is moved from the center of the surface of the substrate toward the periphery, the processing liquid is supplied from the first processing liquid supply part to form a liquid film on the surface of the substrate, and further follows the first processing liquid supply part. Supplying a drying fluid from the first drying fluid supply unit to remove the liquid film on the surface of the substrate to form a dry region. A computer-readable storage medium storing software for causing a computer to execute a control program,
The control program is a storage medium for liquid processing, wherein the computer controls the liquid processing apparatus such that the process according to any one of claims 13 to 15 is executed at the time of execution.

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