JP5683539B2 - Liquid processing apparatus, liquid processing method, and liquid processing storage medium - Google Patents

Description

  The present invention relates to a liquid processing apparatus, a liquid processing method, and a liquid processing storage medium.

  In the semiconductor manufacturing process, for example, while rotating a substrate such as a semiconductor wafer horizontally, a processing liquid is supplied to the surface of the substrate to form a liquid film, and then processing is performed. Then, a dry fluid is supplied to the surface of the substrate. Then, a liquid processing apparatus and a liquid processing method for removing the liquid film and drying are used.

  For example, in the photolithography process, a circuit pattern is formed by applying a photoresist on a substrate, exposing the resist film in accordance with a predetermined circuit pattern, and developing the resist film. In this photolithography process, a processing system in which an exposure apparatus is connected to a coating / development processing apparatus is usually used.

  In the photolithography step, a circuit pattern is formed by depositing a developer on the substrate and dissolving the soluble portion of the resist. Thereafter, in general, a liquid treatment is performed to remove the dissolved product of the resist together with the developer from the substrate surface.

  Conventionally, as this type of liquid processing method, a liquid film is formed by supplying a processing liquid to a substrate surface from a processing liquid supply nozzle that moves from the center of the substrate toward the peripheral edge while rotating a horizontally held substrate. At the same time, the drying fluid that moves from the center of the substrate toward the periphery following the processing solution supply nozzle, such as an inert gas, supplies the drying fluid to the substrate surface to remove the liquid film on the substrate surface. Then, an apparatus (method) for drying is known (see, for example, Patent Document 1).

  Further, as another liquid processing technique, the substrate whose surface is covered with the liquid film of the processing liquid is rotated while being held in a horizontal state, while the gas jetting means provided above the rotation center of the substrate is moved to the substrate surface. An apparatus (method) for ejecting gas in a ring shape to remove a liquid film and drying is known (see, for example, Patent Document 2).

JP 2001-53051 A (Claims) JP 2009-1111219 A (Claims)

  However, in the technique described in Patent Document 1, since the processing liquid supply nozzle and the dry gas supply nozzle are simultaneously moved from the center of the substrate toward the peripheral edge, the processing liquid supply nozzle 60 and the dry gas supply nozzle with respect to the rotation of the substrate W are used. FIG. 17A schematically shows the positional relationship 70. Therefore, in the region A where the processing liquid supply nozzle 60 and the dry gas supply nozzle 70 are located, the liquid is formed by the liquid film of the processing liquid L supplied from the processing liquid supply nozzle 60 and the dry gas supplied from the dry gas supply nozzle 70. The boundary surface of the dry region D from which the film is removed is controlled (see FIG. 17B). However, in the regions B and C closer to the center of the substrate W than the region A where the processing liquid supply nozzle 60 and the dry gas supply nozzle 70 are located, in the region B close to the region A, a slight collapse occurs in the liquid film on the boundary surface. (Refer to FIG. 17 (c)), in the region C away from the region B, the liquid film on the boundary surface completely collapses, and in some cases, the liquid film is broken to form water droplets (see FIG. 17 (d)). As described above, when the boundary surface of the liquid film is broken, a residue is generated in the substrate surface, and the substrate W is defective. In particular, in the cleaning process of the substrate W that forms a fine and high aspect ratio circuit pattern, the processing liquid (cleaning liquid) remains between the circuit patterns, and the surface tension of the processing liquid (cleaning liquid) between the circuit patterns is dominant. Then, pattern collapse occurs due to the influence of stress balance between circuit patterns. This appears as a development defect.

  Further, when the substrate W has hydrophobicity, for example, in an exposed part and an unexposed part after development processing, the exposed part has hydrophilicity and the unexposed part has hydrophobicity. In the case of hydrophobicity (unexposed area), the boundary surface between the liquid film of the processing liquid and the drying area is maintained in the vicinity of the processing liquid supply nozzle in the same manner as the hydrophilicity (exposed area), but is separated from the processing liquid supply nozzle In the portion, since the substrate is dried before one rotation, the liquid film is broken at the boundary surface to form water droplets (see FIG. 17 (d)), and the droplets are scattered on the inner surface of the substrate, so that the substrate surface is stained. Will bring the dirt. This appears as a development defect. This phenomenon is particularly noticeable in a cleaning process after exposure and development processing using a super-water-repellent protective film.

  On the other hand, in the technique described in Patent Document 2, the substrate surface is rotated from the gas injection means provided above the rotation center of the substrate while rotating the substrate whose surface is covered with the liquid film of the processing liquid while being held horizontally. In this case, the liquid film is removed in an annular shape to remove the liquid film and dried. However, when attention is paid to the part where the liquid film is removed by the gas injected from the gas injection means, the technique is similar to the technique described in Patent Document 1. Yes, the liquid film collapses and the liquid tears.

  In addition, the technology described in Patent Document 2 has a smaller control capability of the boundary surface between the liquid film and the dry region than the technology described in Patent Document 1, and if it is attempted to increase the control capability of this boundary surface, In addition, it is not practical because a large amount of gas needs to be used, and the gas jetting means moves upward so that the gas moves to the outer periphery of the substrate.

  The present invention has been made in view of the above circumstances, and in a liquid processing in which a liquid film of a processing liquid is formed on a substrate surface, the processing is performed, and the liquid film is removed and dried, the boundary surface between the liquid film and the drying region The liquid processing apparatus, the liquid processing method, and the liquid processing storage medium that can prevent the residue of the processing liquid on the substrate surface and prevent the liquid from tearing, and prevent defects on the surface of the substrate, are provided. Objective.

In order to solve the above-described problems, a first liquid processing apparatus of the present invention includes a substrate holding unit that horizontally holds a substrate, a rotation mechanism that rotates the substrate holding unit around a rotation center axis, and a surface of the substrate. A first processing liquid supply unit that supplies a processing liquid to the substrate, a first drying fluid supply unit that supplies a drying fluid to the substrate, a second drying fluid supply unit that supplies a drying fluid to the substrate, and A first moving mechanism for moving the first dry fluid supply unit from the center of the substrate toward the periphery; and the second dry fluid supply unit between the center and the periphery of the substrate. A second moving mechanism that moves from a second drying fluid supply start position in which the center and diameter of the substrate that do not interfere with the drying fluid supply unit are set to positions on the same circle, and moves toward the periphery of the substrate; and the rotation mechanism , The treatment liquid supply unit, and the first and second dry fluid supplies And a controller that controls the driving of the first and second moving mechanisms, and the substrate is rotated from the first processing liquid supply unit to the center of the surface of the substrate while the substrate is rotated by the controller. Supplying a liquid to form a liquid film, supplying a drying fluid from the first dry fluid supply unit from the center of the substrate toward the periphery to remove the liquid film on the surface of the substrate to form a dry region; When the first dry fluid supply section moves to a position on the same circle where the center and diameter of the substrate are the same as the second dry fluid supply start position, the second dry fluid supply start position moves from the second dry fluid supply start position to the periphery of the substrate. The drying fluid is supplied from the second drying fluid supply unit to the boundary surface between the liquid film and the drying region, and the first drying fluid supply unit and the second drying fluid supply unit are disposed on the periphery of the substrate. It moves concentrically toward the direction (Claim 1).

  In the liquid processing apparatus according to claim 1, it is preferable that a plurality of the second dry fluid supply units are provided, and the plurality of second dry fluid supply units are formed to be movable by the second moving mechanism ( Claim 2). In addition, the second dry fluid supply unit may be formed in a convex arc shape toward the periphery of the substrate.

  4. The liquid processing apparatus according to claim 1, further comprising a third moving mechanism that moves the first processing liquid supply unit from a center of the substrate toward a peripheral edge, and the control unit performs the above-described operation. You may make it control the drive of a 3rd moving mechanism (Claim 4). In this case, the first dry fluid supply unit is disposed on the rear side with respect to the moving direction of the first processing liquid supply unit, and follows the movement of the first processing liquid supply unit. It is preferable that the dry fluid supply part of the second part moves. Preferably, the first moving mechanism and the third moving mechanism are a common moving mechanism.

The liquid processing apparatus according to any one of claims 1 to 6, further comprising a standby position for waiting the second dry fluid supply unit outward from the periphery of the substrate held by the substrate holding unit, When the first drying fluid supply unit moves from the center of the substrate toward the periphery by the control unit, the second drying fluid supply unit is positioned at the standby position, and the first drying fluid supply unit When the fluid supply unit moves to a position on the same circle where the center and diameter of the substrate are the same as the second dry fluid supply start position, the second dry fluid supply unit is set to the second dry fluid supply start position. It is preferable that the first dry fluid supply unit and the second dry fluid supply unit be moved concentrically toward the periphery of the substrate.

  Further, in the liquid processing apparatus according to any one of claims 1 to 7, supply of the drying fluid from the second drying fluid supply unit at the peripheral portion of the substrate is performed from the first drying fluid supply unit. It is preferable to stop before supply (Claim 8).

According to a second liquid processing apparatus of the present invention, in the liquid processing apparatus according to claim 1, a second processing liquid supply unit for supplying a processing liquid to the substrate, the second processing liquid supply unit, The second dry fluid supply unit does not interfere with the first process liquid supply unit and the first dry fluid supply unit between the center and the periphery of the substrate with the second process liquid supply unit first. A second moving mechanism that moves from the second processing liquid supply start position and the second drying fluid supply start position, which are set to positions on the same circle, with the center and diameter of the substrate moving toward the periphery, and the second And a control unit that controls driving of the second moving mechanism, and the control unit causes the first processing liquid supply unit and the first dry fluid supply unit to be in the second state. center and diameter processing solution supply start position and a second drying fluid supply start position and the substrate is Flip when moving to the position on the circle, the second processing liquid supply start position and the liquid film from the second from the drying fluid supply start position toward the periphery of the substrate the second processing liquid supply unit drying area And supplying a drying fluid from a second drying fluid supply unit, the first processing solution supply unit, the first drying fluid supply unit, and the second processing solution supply unit. And the second dry fluid supply section moves concentrically toward the periphery of the substrate (claim 9). In this case, it is preferable to provide a plurality of the second processing liquid supply unit, the second dry fluid supply unit, and the second moving mechanism.

According to a third liquid processing apparatus of the present invention, there is provided a substrate holding part for holding the substrate horizontally, a rotating mechanism for rotating the substrate holding part around a rotation center axis, and a first for supplying the processing liquid to the substrate. And a second processing liquid supply unit, a first drying fluid supply unit that supplies a drying fluid to the substrate, the first processing liquid supply unit, and the first drying fluid supply unit. A first moving mechanism that moves from the center of the substrate toward the peripheral edge with the processing liquid supply portion first, and the first processing liquid supply portion between the center and the peripheral edge of the substrate. And a second moving mechanism that moves from the second treatment liquid supply start position set to a position on the same circle where the center and diameter of the substrate do not interfere with the first dry fluid supply unit to move toward the periphery, and Rotating mechanism, first and second processing liquid supply units, first dry fluid supply unit, first and first And a control unit that controls the driving of the moving mechanism, and the control unit supplies the processing liquid from the first processing liquid supply unit to the center of the surface of the substrate while rotating the substrate. And a drying fluid is supplied from the first drying fluid supply unit to remove the liquid film on the substrate surface to form a drying region, and the first processing liquid supply unit and the first drying fluid supply are formed. When the portion moves to a position on the same circle where the center and diameter of the substrate are the same as the second processing liquid supply start position, the second processing liquid is moved from the second processing liquid supply start position toward the periphery of the substrate. A processing liquid is supplied from the liquid supply unit to the boundary surface between the liquid film and the drying region, and the first processing liquid supply unit, the first drying fluid supply unit, and the second processing liquid supply unit are connected to the periphery of the substrate. It moves to concentric shape toward the (claim 11). In this case, it is preferable to provide a plurality of the second processing liquid supply unit and the second moving mechanism.

According to the first liquid processing method of the present invention, the processing liquid is supplied from the first processing liquid supply unit to the center of the surface of the substrate while holding the substrate horizontally and rotating around the central axis of the substrate. A step of forming a liquid film on the surface of the substrate; and the center and diameter of the substrate on the same circle so that the first dry fluid supply unit does not interfere with the first dry fluid supply unit while rotating the substrate When the second dry fluid supply start position set at the position and the center and diameter of the substrate move to a position on the same circle , the second dry fluid supply start position moves from the second dry fluid supply start position toward the periphery. A drying fluid is supplied from the drying fluid supply unit to the boundary surface between the liquid film and the drying region, and the first drying fluid supply unit and the second drying fluid supply unit are concentrically formed toward the periphery of the substrate. And a moving step. (Claim 13) .

According to a second liquid processing method of the present invention, in the liquid processing method according to claim 13, the first dry fluid supply unit interferes with the first dry fluid supply unit while rotating the substrate. When the second processing liquid supply start position where the center and diameter of the substrate are set to the same circle position and the position where the center and diameter of the substrate move to the same circle position , the second processing liquid supply is performed. The processing liquid is supplied to the boundary surface between the liquid film and the drying region from the second processing liquid supply unit that moves from the start position toward the periphery, and the second drying is performed following the second processing liquid supply unit. A drying fluid is supplied to the boundary surface between the liquid film and the drying region from a second drying fluid supply unit that moves toward the periphery from the fluid supply start position, and the first drying fluid supply unit and the second processing liquid supply And the second dry fluid supply unit concentrically toward the periphery of the substrate Further characterized by comprising the steps of moving to (claim 14).

The third liquid processing method of the present invention supplies the processing liquid from the first processing liquid supply unit to the center of the surface of the substrate while holding the substrate horizontally and rotating it around the central axis of the substrate. Forming the liquid film on the surface of the substrate, and the center and diameter of the substrate are the same so that the first drying fluid supply unit does not interfere with the first drying fluid supply unit while rotating the substrate. When the second processing liquid supply start position set at a position on the circle and the center and diameter of the substrate move to the same circular position , the substrate moves from the second processing liquid supply start position toward the periphery. A processing liquid is supplied from the second processing liquid supply unit to the boundary surface between the liquid film and the drying region, and the first drying fluid supply unit and the second processing liquid supply unit are concentrically arranged toward the periphery of the substrate. And a step of moving in a shape (claim 15).

  16. The liquid processing method according to claim 13, wherein the first processing liquid supply unit is moved from the center of the surface of the substrate toward the periphery, and the processing liquid is transferred from the first processing liquid supply unit. To form a liquid film on the surface of the substrate, and supply a drying fluid from a first drying fluid supply unit that follows the first processing liquid supply unit to remove the liquid film on the substrate surface. A dry region may be formed (claim 16).

  The liquid processing storage medium according to the present invention is a computer-readable storage medium storing software for causing a computer to execute a control program, and the control program is executed according to any one of claims 13 to 16. The computer controls the liquid processing apparatus so that the following process is executed (claim 17).

According to the first liquid processing apparatus (method) of the present invention, the processing liquid is supplied from the first processing liquid supply unit to the center of the surface of the substrate while the substrate is held horizontally and rotated around the central axis. Then, a liquid film is formed on the surface of the substrate, and then, while rotating the substrate, the drying fluid is supplied from the center of the surface of the substrate toward the peripheral edge of the substrate by rotating the substrate, and the liquid on the surface of the substrate is The film is removed to form a dry area. Thereafter, while rotating the substrate, the center and diameter of the substrate are such that the first drying fluid supply unit (or the first processing liquid supply unit and the first drying fluid supply unit) does not interfere with the first drying fluid supply unit. When the second dry fluid supply start position set at the same circle position and the center and diameter of the substrate move to the same circle position , the second dry fluid supply start position moves toward the periphery. The drying fluid is supplied from the second drying fluid supply unit to the boundary surface between the liquid film and the drying region, and the first drying fluid supply unit (or the first processing liquid supply unit and the first drying fluid supply unit) is supplied. And the second dry fluid supply section are moved concentrically toward the peripheral edge of the substrate, thereby controlling the boundary between the liquid film formed on the substrate surface and the dry region formed by removing the liquid film. It is possible to prevent residue of the processing liquid and liquid tearing.

According to the second liquid processing apparatus (method) of the present invention, the processing liquid is supplied from the first processing liquid supply unit to the center of the surface of the substrate while the substrate is held horizontally and rotated around the central axis. Then, a liquid film is formed on the surface of the substrate, and then, while rotating the substrate, the drying fluid is supplied from the center of the surface of the substrate toward the peripheral edge of the substrate by rotating the substrate, and the liquid on the surface of the substrate is The film is removed to form a dry area. Thereafter, while rotating the substrate, the first processing liquid supply unit and the first dry fluid supply unit are set to positions on the same circle where the center and diameter of the substrate do not interfere with the first dry fluid supply unit. When the second processing liquid supply start position and the second drying fluid supply start position and the center and diameter of the substrate move to the same circle , the second processing liquid supply start position and the second drying fluid supply The processing liquid and the drying fluid are supplied to the boundary surface between the liquid film and the drying region from the second processing liquid supply unit and the second drying fluid supply unit that move from the start position toward the periphery, and the first processing liquid supply The liquid film and the liquid formed on the substrate surface by moving the first and second drying fluid supply units, the second processing liquid supply unit, and the second drying fluid supply unit concentrically toward the periphery of the substrate. Process liquid by controlling the boundary surface of the dry area formed by removing the film The residue and liquid tearing can be prevented.

According to the third liquid processing apparatus (method) of the present invention, the processing liquid is supplied from the first processing liquid supply unit to the center of the surface of the substrate while the substrate is held horizontally and rotated around the central axis. Then, a liquid film is formed on the surface of the substrate, and then, while rotating the substrate, the drying fluid is supplied from the center of the surface of the substrate toward the peripheral edge of the substrate by rotating the substrate, and the liquid on the surface of the substrate is supplied. The film is removed to form a dry area. Thereafter, while rotating the substrate, the first processing liquid supply unit and the first dry fluid supply unit are set to positions on the same circle where the center and diameter of the substrate do not interfere with the first dry fluid supply unit. When the processing liquid supply start position of No. 2 and the center and diameter of the substrate move to the same circular position , the liquid from the second processing liquid supply section moves from the second processing liquid supply start position toward the periphery. The processing liquid is supplied to the boundary surface between the film and the drying region, and the first processing liquid supply unit, the first drying fluid supply unit, and the second processing liquid supply unit are moved concentrically toward the peripheral edge of the substrate. Thus, the liquid film formed on the substrate surface and the boundary surface of the dry region formed by removing the liquid film can be controlled to prevent the residue and tearing of the processing liquid. This third liquid processing apparatus (method) is effective in that the liquid tearing of the boundary surface between the liquid film and the dry region can be suppressed particularly when a super water-repellent film is formed on the substrate surface.

  According to the present invention, in the liquid processing in which the liquid film of the processing liquid is formed on the surface of the substrate, the processing is performed, and the liquid film is removed and dried, by controlling the interface between the liquid film and the drying region, In addition to preventing residues of the treatment liquid and preventing liquid tearing, it is possible to prevent defects on the substrate surface.

1 is a schematic plan view showing an entire processing system in which an exposure apparatus is connected to a coating / development processing apparatus to which a liquid processing apparatus according to the present invention is applied. It is a schematic perspective view of the said processing system. 1 is a schematic longitudinal sectional view of a development processing apparatus to which a liquid processing apparatus according to a first embodiment of the present invention is applied. It is a top view which shows the liquid processing apparatus which concerns on the said 1st Embodiment. It is a schematic plan view which shows the process of the liquid processing method which concerns on 1st Embodiment of this invention. It is a schematic plan view which shows the process of the liquid processing method which concerns on 2nd Embodiment of this invention. It is a schematic plan view which shows the process of the liquid processing method which concerns on 3rd Embodiment of this invention. It is a schematic longitudinal cross-sectional view of the image development processing apparatus to which the liquid processing apparatus which concerns on 4th Embodiment of this invention is applied. It is a top view which shows the liquid processing apparatus which concerns on the said 4th Embodiment. It is a schematic plan view which shows the process of the liquid processing method which concerns on 4th Embodiment of this invention. It is a schematic longitudinal cross-sectional view of the image development processing apparatus to which the liquid processing apparatus concerning 5th Embodiment of this invention is applied. It is a top view which shows the liquid processing apparatus which concerns on the said 5th Embodiment. It is a schematic plan view which shows the process of the liquid processing method which concerns on 5th Embodiment of this invention. It is a schematic plan view which shows the process of the liquid processing method which concerns on 6th Embodiment of this invention. It is a schematic plan view which shows the process of an example of the liquid processing method which concerns on 7th Embodiment of this invention. It is a schematic plan view which shows the process of another example of the liquid processing method which concerns on 7th Embodiment of this invention. It is a schematic plan view which shows the process of the liquid processing method which concerns on 8th Embodiment of this invention. It is a schematic sectional drawing which shows the process of the liquid processing method which concerns on 8th Embodiment. Schematic plan views (a) showing the positional relationship between the processing liquid supply nozzle and the dry gas supply nozzle with respect to the substrate in the conventional liquid processing method, and schematic cross-sectional views (b) and (c) of regions A, B, and C in FIG. (D).

  Embodiments of the present invention will be described below with reference to the accompanying drawings. Here, a case where the liquid processing apparatus according to the present invention is applied to a substrate cleaning apparatus and applied to a processing system in which an exposure processing apparatus is connected to a coating / development processing apparatus will be described.

  The processing system includes a carrier station 1 for carrying in / out a carrier 10 for hermetically storing a plurality of, for example, 25 semiconductor wafers W (hereinafter referred to as wafers W), which are substrates to be processed, and a carrier station 1 for taking out the carrier 10. A processing unit 2 that performs resist coating, development processing, and the like on the wafer W, an exposure unit 4 that performs immersion exposure of the surface of the wafer W in a state where a liquid layer that transmits light is formed on the surface of the wafer W, and the processing unit 2. And an exposure unit 4, and an interface unit 3 that transfers the wafer W.

  The carrier station 1 includes a mounting unit 11 on which a plurality of carriers 10 can be placed side by side, an opening / closing unit 12 provided on a front wall as viewed from the mounting unit 11, and a wafer from the carrier 10 via the opening / closing unit 12. Delivery means A1 for taking out W is provided.

  Further, a processing unit 2 surrounded by a casing 20 is connected to the back side of the carrier station 1, and the processing unit 2 has a heating / cooling system in order from the left front side when viewed from the carrier station 1. Shelving units U1, U2, and U3 having multiple units are arranged, and liquid processing units U4 and U5 are arranged on the right hand. Between the shelf units U1, U2, and U3, main transfer means A2 and A3 for transferring the wafer W between the units are provided alternately with the shelf units U1, U2, and U3. The main transport means A2 and A3 include one surface portion on the shelf unit U1, U2 and U3 side arranged in the front-rear direction when viewed from the carrier station 1, and one surface portion on the right liquid processing unit U4 and U5 side which will be described later. And a space surrounded by a partition wall 21 constituted by a rear surface portion forming one surface on the left side. Further, between the carrier station 1 and the processing unit 2 and between the processing unit 2 and the interface unit 3, a temperature / humidity provided with a temperature control device for the processing liquid used in each unit, a duct for temperature / humidity control, and the like. An adjustment unit 22 is arranged.

  The interface unit 3 includes a first transfer chamber 3A and a second transfer chamber 3B that are provided between the processing unit 2 and the exposure unit 4 in the front-rear direction, and includes a first wafer transfer unit 30A and a second transfer chamber 3B, respectively. A second wafer transfer unit 30B is provided.

  The shelf units U1, U2, and U3 are configured such that various units for performing pre-processing and post-processing of the processing performed in the liquid processing units U4 and U5 are stacked in a plurality of stages, for example, 10 stages. A heating unit (HP) for heating (baking) the wafer W, a cooling unit (CPL) for cooling the wafer W, and the like are included. In addition, as shown in FIG. 2, for example, the liquid processing units U4 and U5 include a bottom antireflection film coating unit (BCT) 23 for coating an antireflection film on a chemical solution storage unit such as a resist or a developer, and a coating unit ( COT) 24, a developing unit (DEV) 25 for supplying a developing solution to the wafer W and developing it, and the like are stacked in a plurality of stages, for example, five stages. A substrate cleaning apparatus which is a liquid processing apparatus according to the present invention is provided in a developing unit (DEV) 25.

  Next, the flow of the wafer W in the above processing system will be briefly described. First, when the carrier 10 in which the wafer W is stored is placed on the mounting table 11 from the outside, the lid of the carrier 10 is removed together with the opening / closing part 12, and the wafer W is taken out by the transfer means A1. Then, the wafer W is transferred to the main transfer means A2 through a transfer unit that forms one stage of the shelf unit U1, and the antireflection film is pre-processed as a pretreatment of the coating process on one shelf in the shelf units U1 to U3. The temperature of the substrate is adjusted by formation or a cooling unit.

  Thereafter, the wafer W is carried into the coating unit (COT) 24 by the main transfer means A2, and a resist film is formed on the surface of the wafer W. The wafer W on which the resist film has been formed is unloaded by the main transfer means A2, loaded into the heating unit, and baked at a predetermined temperature. The wafer W that has been baked is cooled by the cooling unit, and then transferred to the interface unit 3 via the transfer unit of the shelf unit U3, and then transferred into the exposure unit 4 via the interface unit 3. The In the case where a protective film for immersion exposure is applied on the resist film, after cooling by the cooling unit, a chemical solution for protective film is applied in a unit (not shown) in the processing unit 2. . Thereafter, the wafer W is carried into the exposure unit 4 and immersion exposure is performed. At this time, cleaning may be performed by a substrate cleaning apparatus of the present invention (not shown) provided in the interface unit 3 before immersion exposure.

  The wafer W that has been subjected to the immersion exposure is taken out from the exposure unit 4 by the second wafer transfer unit 30B and is carried into a heating unit (PEB) that forms one stage of the shelf unit U6. Thereafter, the wafer W is unloaded from the heating unit (PEB) by the first wafer transfer unit 30A and transferred to the main transfer means A3. Then, it is carried into the developing unit 25 by this main transport means A3. In the developing unit 25, the substrate is developed by the substrate cleaning apparatus according to the present invention, which is also used for the developing process, and further cleaning is performed. Thereafter, the wafer W is unloaded from the developing unit 25 by the main transfer unit A3, and returned to the original carrier 10 on the mounting table 11 via the main transfer unit A2 and the transfer unit A1.

<First Embodiment>
An embodiment in which the substrate cleaning apparatus of the present invention is combined with a development processing apparatus will be described with reference to FIGS.

  As shown in FIGS. 3 and 4, the substrate cleaning apparatus 100 includes a spin chuck 30 that is a substrate holding unit that sucks and sucks the central portion of the back surface of the wafer W and holds it in a horizontal position in the casing 26. Yes. The spin chuck 30 is connected to a rotation mechanism 32 such as a servo motor via a shaft portion 31 and is configured to be rotatable while the wafer W is held by the rotation mechanism 32. The rotation mechanism 32 is electrically connected to a control unit 90a of a control computer 90 that is a control means, and the number of rotations of the spin chuck 30 is controlled based on a control signal from the control computer 90. Also, the casing 26 is provided with a loading / unloading port 27 for the wafer W, and a shutter 28 is disposed at the loading / unloading port 27 so as to be opened and closed.

  A cup body 40 having an opening on the upper side is provided so as to surround the side of the wafer W on the spin chuck 30. The cup body 40 includes a cylindrical outer cup 41 and a cylindrical inner cup 42 whose upper side is inclined inward. The outer cup 41 is connected to the lower end of the outer cup 41 by an elevating mechanism 43 such as a cylinder. 41 is moved up and down, and the inner cup 42 is configured to be lifted and lowered by being pushed up by a step formed on the inner peripheral surface of the lower end side of the outer cup 41. The lifting mechanism 43 is electrically connected to the control computer 90, and is configured so that the outer cup 41 moves up and down based on a control signal from the control computer 90.

  A circular plate 44 is provided on the lower side of the spin chuck 30, and a liquid receiving portion 45 whose cross section is formed in a concave shape is provided around the entire circumference of the circular plate 44. A drain discharge port 46 is formed on the bottom surface of the liquid receiving part 45, and the developer and the cleaning liquid spilled from the wafer W or shaken off and stored in the liquid receiving part 45 are passed through the drain discharge port 46. Discharged outside the device. A ring member 47 having a mountain-shaped cross section is provided outside the circular plate 44. Incidentally, for example, three lift pins (not shown) which are substrate support pins penetrating the circular plate 44 are provided, and the wafer W is caused to cooperate by the lift pins and the substrate transfer means (not shown). It is configured to be delivered to the spin chuck 30.

  On the other hand, on the upper side of the wafer W held by the spin chuck 30, a developing solution nozzle 50, a cleaning solution nozzle 60 that is a first processing solution supply unit that supplies a processing solution, for example, a cleaning solution to the wafer surface, and a cleaning solution nozzle 60. First drying that forms a dry region D by discharging (supplying) an inert gas such as N2 (nitrogen) or Ar (argon) to a liquid film formed by supplying a cleaning liquid from The first gas nozzle 70 that is a fluid supply unit and the second gas nozzle 80 that is a second dry fluid supply unit that removes cleaning liquid containing dissolved products remaining between circuit patterns in the drying region D can be moved up and down and moved horizontally. It is provided as possible.

  The developer nozzle 50 includes, for example, a slit-like discharge port 50 </ b> A that supplies the developer to the wafer W held by the spin chuck 30 in a strip shape. The discharge ports 50A are arranged such that the longitudinal direction is along the diameter direction of the wafer W. The developer nozzle 50 is connected to a developer supply source 53 via a developer supply pipe 51 provided with a flow rate regulator 52. The flow rate and supply time of the developer are adjusted by a flow rate regulator 52 such as a flow rate adjustment valve.

  Further, the developer nozzle 50 is supported on one end side of a nozzle arm 55 as a support member, and the other end side of the nozzle arm 55 is connected to a moving base 56 provided with an elevating mechanism (not shown). Further, the moving base 56 can be moved in the lateral direction by a nozzle moving mechanism 200 such as a ball screw mechanism or a timing belt mechanism, for example, along a guide member 57 extending in the X direction on the bottom surface of the casing 26. It is configured. Further, a standby portion 58 of the developer nozzle 50 is provided on one outer side of the cup 40, and the nozzle tip is cleaned in the standby portion 58.

  A cleaning liquid nozzle 60 is provided above the spin chuck 30 and is connected to a cleaning liquid supply source 63 via a cleaning liquid supply pipe 61 provided with a flow rate regulator 62. The flow rate and supply time of the cleaning liquid are adjusted by a flow rate regulator 62 such as a flow rate adjustment valve.

  For example, a temperature regulator (not shown) equipped with a heating device such as a heater is connected to the cleaning liquid supply source 63 to adjust the cleaning liquid to a predetermined temperature. Further, the cleaning liquid supply pipe 61 is surrounded by a temperature maintaining member (not shown) including a heat insulating member including the flow rate regulator 62, and when the cleaning liquid is supplied onto the wafer W from the cleaning liquid nozzle 60. Until then, the cleaning liquid is maintained at a predetermined temperature.

  Further, as shown in FIG. 4, the cleaning liquid nozzle 60 is fixed to a nozzle arm 66 via a nozzle holding portion 65, and this nozzle arm 66 is connected to a moving base 67 provided with an elevating mechanism. The moving base 67 is configured to be movable in the lateral direction without interfering with the developer nozzle 50, for example, along the guide member 57A by a nozzle moving mechanism 300 including, for example, a ball screw mechanism or a timing belt mechanism. ing. Further, a standby unit 68 of the cleaning liquid nozzle 60 is provided on the other outer side of the standby unit 58 of the developer nozzle 50 of the cup 40.

  The first gas nozzle 70 is connected to a gas supply source 73 via a gas supply pipe 71 provided with a gas flow rate regulator 72. The first gas nozzle 70 is fixed to, for example, a nozzle holding portion 65 common to the cleaning liquid nozzle 60, and is configured to move integrally with the cleaning liquid nozzle 60 by a nozzle arm 66.

  On the other hand, the second gas nozzle 80 is connected to a gas supply source 83 via a gas supply pipe 81 provided with a gas flow rate regulator 82. The second gas nozzle 80 is fixed to a nozzle arm 86 via a nozzle holding portion 85, and the nozzle arm 86 is connected to a moving base 87 provided with an elevating mechanism. The moving base 87 is configured to be movable in the lateral direction by the nozzle moving mechanism 400 so as not to interfere with the developing nozzle 50, the cleaning nozzle 60, and the first gas nozzle 70, for example, along the guide member 57A. Further, a standby position 88 of the second gas nozzle 80 is provided on the other outer side of the standby portion 68 of the cleaning nozzle 60 of the cup 40.

  A nozzle moving mechanism 200 for moving the developer nozzle 50, a cleaning liquid nozzle 60, nozzle moving mechanisms 300 and 400 for moving the first gas nozzle 70 and the second gas nozzle 80, and a rotating mechanism 32 for rotating the spin chuck 30. Further, the elevating mechanism 43 of the cup 40, the flow rate adjusters 52, 62, 72, and 82 for adjusting the flow rates of the developing solution, the cleaning solution, and the gas are controlled by the control unit 90a.

  The control unit 90a is built in the control computer 90, and the control computer 90 stores a control program for storing a program for executing each processing step in the operation described below performed by the substrate cleaning apparatus 100 in addition to the control unit 90a. The unit 90b and the reading unit 90c are incorporated. The control computer 90 is inserted into the input unit 90e connected to the control unit 90a, a display unit 90d for displaying a processing step screen for creating a processing step, and a reading unit 90c. A computer-readable storage medium storing software for executing the control program is provided, and a control signal is output to each unit based on the control program.

  The control program is stored in a storage medium 90f such as a hard disk, a compact disk, a flash memory, a flexible disk, or a memory card, and is used by being installed in the control computer 90 from the storage medium 90f.

  Next, the operation | movement aspect of the board | substrate cleaning apparatus 100 comprised as mentioned above is demonstrated. First, when the wafer W is not carried into the substrate cleaning apparatus 100, the outer cup 41 and the inner cup 42 are in the lowered position, and the developer nozzle 50, the cleaning liquid nozzle 60, the first gas nozzle 70, and the second gas nozzle. 80 stands by at a predetermined standby position. In the above processing system, when the wafer W after being subjected to the immersion exposure is heated and then carried into the substrate cleaning apparatus 100 by the main transfer means A3 (see FIG. 1), the main transfer means A3 is not shown. The wafer W is delivered to the spin chuck 30 by the cooperative action with the lift pins.

  Thereafter, the outer cup 41 and the inner cup 42 are set at the raised position, and the developer is supplied from the developer nozzle 50 onto the wafer W, and the developer is supplied by a known method. In this embodiment, when the supply of the developer is started, the developer nozzle 50 is disposed above the peripheral edge of the wafer W, for example, several mm above the surface of the wafer W. The wafer W is rotated at a rotational speed of, for example, 1000 to 1200 rpm, and the developer nozzle 50 is moved from the periphery of the wafer W toward the center while discharging the developer from the developer nozzle 50 in a strip shape. The developer discharged in a strip shape from the developer nozzle 50 is arranged from the outside to the inside of the wafer W so that there is no gap between them, so that the developer is supplied spirally to the entire surface of the wafer W. The The developer spreads outward along the surface of the wafer W due to the centrifugal force generated by the rotation of the wafer W, and a thin liquid film is formed. In this way, the soluble portion of the resist is dissolved in the developer, and the insoluble portion remains to form a circuit pattern.

  Next, the cleaning liquid nozzle 60 is arranged above the central portion of the wafer W so as to be replaced with the developing liquid nozzle 50, and immediately after the developing liquid nozzle 50 stops supplying the developing liquid, the cleaning liquid L is quickly supplied from the cleaning liquid nozzle 60. The surface of the wafer W is cleaned by discharging. Hereinafter, this cleaning step will be described in detail with reference to FIG. The cleaning process of this embodiment is performed by the following steps.

(Step 1) The cleaning liquid nozzle 60 is disposed above the center of the wafer W, for example, at a height of 15 mm from the surface of the wafer W. While the spin chuck 30 is rotated at, for example, 1000 rpm, the cleaning liquid L such as pure water is discharged (supplied) from the cleaning liquid nozzle 60 to the center of the wafer W at a flow rate of, for example, 350 mL / min for 5 seconds, for example. The cleaning liquid L spreads from the center of the wafer W toward the periphery by centrifugal force, and the developer is replaced with the cleaning liquid L. Thus, a liquid film of the cleaning liquid L is formed on the entire surface of the wafer W.

(Step 2) Next, as shown in FIG. 5 (a), the cleaning liquid nozzle is moved by rotating the nozzle arm 66 (see FIG. 4) while rotating the spin chuck 30 at a rotation speed of 1500 rpm or higher, for example, 2500rpm. 60 is moved from the central portion of the wafer W toward the periphery of the wafer W by a certain distance, and the center of the wafer W is discharged (supplied) from the first gas nozzle 70 following the cleaning liquid nozzle 60. The wafer N moves from the portion toward the periphery to the second N 2 gas supply start position where the center and diameter of the wafer W that does not interfere with the cleaning nozzle 60 and the first gas nozzle 70 are set to positions on the same circle . In this way, the cleaning liquid L is supplied from the cleaning liquid nozzle 60 toward the periphery of the wafer W from the center of the wafer W to form a liquid film of the cleaning liquid L, and the first gas nozzle 70 follows the supply of the cleaning liquid L. Then, N2 gas G is sprayed to thin the liquid film and removed to form a dry region D (see FIG. 5A). The dry region D refers to a region where the surface of the wafer W is exposed by the evaporation of the cleaning liquid L, and here includes a case where the cleaning liquid L remains between circuit patterns of the wafer W. The core of the dry region D spreads from the center to the supply position of the cleaning liquid L by centrifugal force.

(Step 3) When the cleaning nozzle 60 and the first gas nozzle 70 are moved from the center of the wafer W toward the periphery to the second N 2 gas supply start position as described above , the second gas nozzle 80 is moved to the standby position. The second gas nozzle 80 is moved to the second N2 gas supply start position from 88 and the second gas nozzle 80 is discharged (supplied) from the second gas nozzle 80 to the boundary surface between the liquid film and the drying region D, while the second gas nozzle 80 is moved to the cleaning nozzle 60. And it moves concentrically toward the periphery of the wafer W together with the first gas nozzle 70 (see FIG. 5B). In this case, the moving speed V of the cleaning nozzle 60 and the first gas nozzle 70 is the same as the moving speed V of the second gas nozzle 80, and N2 gas is discharged (supplied) from the first gas nozzle 70 and the second gas nozzle 80. The position is synchronized. In this way, by moving the first and second gas nozzles 70 and 80 concentrically to the periphery of the wafer W, it is possible to control liquid collapse and liquid tearing at the interface between the liquid film and the drying region D. The residue of the cleaning liquid L that could not be removed by the N 2 gas G discharged from the first gas nozzle 70 can be removed by the N 2 gas G discharged from the second gas nozzle 80 (see FIG. 5C). .

  Note that the discharge (supply) of the N 2 gas G from the second gas nozzle 80 may be stopped at the periphery of the wafer W before the discharge (supply) of the N 2 gas G from the first gas nozzle 70 is stopped. . Even in this manner, even if the discharge (supply) of the N 2 gas G from the second gas nozzle 80 is stopped, the residue of the cleaning liquid L can be shaken off by the centrifugal force at the peripheral edge of the wafer W.

  In the series of steps 1, 2, and 3, the control computer 90 reads out the control program stored in the memory of the control computer 90, and controls to operate each mechanism described above based on the read command. It is executed by outputting a signal.

According to the first embodiment, after developing the wafer W on which the fine and high aspect ratio circuit pattern P is formed, the wafer W is held horizontally and rotated from the cleaning liquid nozzle 60 while rotating around the central axis. The cleaning liquid L is discharged (supplied) to the center of the surface of the wafer W to form a liquid film on the surface of the wafer W, and then the wafer W is rotated from the first gas nozzle 70 from the center of the surface of the wafer W. A dry region D is formed by discharging (supplying) N 2 gas G toward the periphery of the wafer W to remove the liquid film on the surface of the wafer W. After that, while rotating the wafer W, the second and the cleaning liquid nozzle 60 and the first gas nozzle 70 are set to positions on the same circle where the center and the diameter of the wafer W do not interfere with the cleaning nozzle 60 and the first gas nozzle 70 . N2 when moving the gas supply starting position, and supplies the second N2 N2 gas G to the boundary surface of the second from the gas nozzle 80 and the liquid film drying area D that moves from the gas supply start position toward the periphery, the cleaning solution The liquid film and the liquid film formed on the surface of the wafer W are removed by moving the nozzle 60, the first gas nozzle 70 and the second gas nozzle 80 concentrically toward the peripheral edge of the wafer W, and the drying formed. The boundary surface of the region D is controlled to remove (discharge) the cleaning liquid L remaining between the circuit patterns in the dry region D. With this configuration of the first embodiment, a high cleaning effect can be realized, and development defects can be reduced to almost none. Furthermore, in the first embodiment, the wafer W is dried by discharging (supplying) the N2 gas G from the second gas nozzle 80 to remove (discharge) the cleaning liquid L remaining between the circuit patterns in the drying region D. Can be promoted. Thereby, the moving speed of the cleaning liquid nozzle 60 can be increased. Thus, effective cleaning can be performed in a shorter time.

Second Embodiment
In the second embodiment, a plurality of second gas nozzles 80 (here, two cases are shown) are provided so that the drying efficiency can be improved and the residue of the cleaning liquid L can be reliably removed. In this case, the two second gas nozzles 80 are provided at two positions symmetrical with respect to the center line of the wafer W in the nozzle arm 86, and the two second gas nozzles 80 are controlled by the control unit 90a. The first gas nozzle 70 is configured to be located on a concentric circle of the wafer W in correspondence with the movement of the first gas nozzle 70.

  In the second embodiment, the other parts are the same as those in the first embodiment, so the same parts are denoted by the same reference numerals and description thereof is omitted.

  A substrate cleaning method by the substrate cleaning apparatus (method) of the second embodiment configured as described above will be briefly described with reference to FIG. In this embodiment, Step 1 and Step 2 are the same as those in the first embodiment, and thus the same parts are denoted by the same reference numerals and description thereof is omitted.

(Step 3a) The center and diameter of the wafer W that does not interfere with the cleaning nozzle 60 and the first gas nozzle 70 are set to positions on the same circle from the center of the wafer W toward the peripheral edge of the cleaning nozzle 60 and the first gas nozzle 70. When the second N 2 gas supply start position is moved, the two second gas nozzles 80 are moved from the standby position 88 to the second N 2 gas supply start position, and the liquid film is transferred from the two second gas nozzles 80 to the liquid film. The two second gas nozzles 80 move concentrically toward the peripheral edge of the wafer W together with the cleaning nozzle 60 and the first gas nozzle 70 while discharging (supplying) the N2 gas G to the boundary surface of the dry region D. (See FIG. 6 (b)). At this time, the movement speed Va of the second gas nozzle 80 is controlled to be slower than the movement speed V of the cleaning nozzle 60 and the first gas nozzle 70, and the first gas nozzle 70 and the two second gas nozzles 80 are moved to the wafer. Located on the concentric circle of W.

  In this way, the first gas nozzle 70 and the two second gas nozzles 80 are moved concentrically to the peripheral edge of the wafer W, thereby controlling liquid collapse and liquid breakage at the boundary surface between the liquid film and the drying region D. The residue of the cleaning liquid L that could not be removed by the N 2 gas G discharged from the first gas nozzle 70 can be removed by the N 2 gas G discharged from the two second gas nozzles 80 ( (Refer FIG.6 (c)). Accordingly, the N2 gas discharged (supplied) from the two second gas nozzles 80 onto the surface of the wafer W can be efficiently blown to the boundary surface between the liquid film and the drying region D, so that the drying efficiency is improved and the drying time is increased. Can be shortened.

  In the series of steps 1, 2, and 3a described above, the control computer 90 reads out the control program stored in the memory of the control computer 90, and controls for operating each of the mechanisms described above based on the read instructions. It is executed by outputting a signal.

<Third Embodiment>
In the third embodiment, instead of the second gas nozzle 80 in the first embodiment, a convex arc-shaped gas nozzle 80A toward the periphery of the wafer W is used. Thus, the second gas nozzle 80A formed in a convex arc shape toward the peripheral edge of the wafer W has a discharge arc similarly formed in a convex arc shape, and is discharged from the second gas nozzle 80A. The cross section of the N2 gas is configured to have an arc shape.

  In the third embodiment, the other parts are the same as those in the first embodiment. Therefore, the same parts are denoted by the same reference numerals and description thereof is omitted.

  A substrate cleaning method by the substrate cleaning apparatus (method) of the third embodiment configured as described above will be briefly described with reference to FIG. In this embodiment, Step 1 and Step 2 are the same as those in the first embodiment, and thus the same parts are denoted by the same reference numerals and description thereof is omitted.

(Step 3b) The center and diameter of the wafer W that does not interfere with the cleaning nozzle 60 and the first gas nozzle 70 are set to positions on the same circle from the center of the wafer W toward the peripheral edge of the cleaning nozzle 60 and the first gas nozzle 70. and when moving to the second N2 gas supply start position, a second gas nozzle 80A moves from the standby position 88 to the second N2 gas supply starting position, the boundary of the liquid film and drying area D from the second gas nozzles 80A The second gas nozzle 80 is moved concentrically toward the peripheral edge of the wafer W together with the cleaning nozzle 60 and the first gas nozzle 70 while discharging (supplying) the N2 gas G in a circular arc shape on the surface (FIG. 7). (See (b)). In this way, by moving the first and second gas nozzles 70 and 80A concentrically to the periphery of the wafer W, it is possible to control liquid collapse and liquid breakage at the boundary surface between the liquid film and the dry region D. The residue of the cleaning liquid L that could not be removed by the N2 gas G discharged from the first gas nozzle 70 can be removed by the N2 gas G discharged from the second gas nozzle 80A (see FIG. 5C). . Therefore, since the N2 gas discharged (supplied) from the second gas nozzle 80A onto the surface of the wafer W can be efficiently blown onto the arc-shaped boundary surface between the liquid film and the drying region D, the drying efficiency is improved and the drying time is increased. Can be shortened.

  In the series of steps 1, 2, and 3b described above, the control computer 90 reads the control program stored in the memory of the control computer 90, and controls for operating each of the mechanisms described above based on the read command. It is executed by outputting a signal.

<Fourth embodiment>
Next, a substrate cleaning apparatus and method according to a fourth embodiment of the invention will be described with reference to FIGS. 8 to 10A. In the fourth embodiment, in addition to the cleaning liquid nozzle 60 (hereinafter referred to as the first cleaning liquid nozzle 60), the first gas nozzle 70, and the second gas nozzle 70 in the substrate cleaning apparatus used in the first embodiment, a liquid film and This is a case where a second cleaning nozzle 60A for discharging (supplying) a cleaning liquid L such as pure water is provided on the surface of the wafer W at the boundary surface of the dry region D.

  In this case, the second cleaning liquid nozzle 60 </ b> A is fixed to a nozzle holding portion 85 common to the second gas nozzle 80, and is configured to move integrally with the second gas nozzle 80 by the nozzle arm 86. .

  The second cleaning liquid nozzle 60A is connected to a cleaning liquid supply source 63A via a cleaning liquid supply pipe 61A provided with a flow rate regulator 62A. The flow rate and supply time of the cleaning liquid are adjusted by a flow rate regulator 62A such as a flow rate adjustment valve, for example. The cleaning liquid supply source 63A is connected to a temperature regulator (not shown) equipped with a heating device such as a heater to adjust the cleaning liquid to a predetermined temperature. The cleaning liquid supply pipe 61A is surrounded by a temperature maintaining member (not shown) including a heat insulating member including the flow rate regulator 62A, and the cleaning liquid is supplied onto the wafer W from the second cleaning liquid nozzle 60A. The cleaning liquid is maintained at a predetermined temperature until it is supplied.

  In the fourth embodiment, the other parts are the same as those in the first embodiment, and therefore the same parts are denoted by the same reference numerals and description thereof is omitted.

  A substrate cleaning method by the substrate cleaning apparatus (method) of the fourth embodiment configured as described above will be briefly described with reference to FIGS. In this embodiment, Step 1 and Step 2 are the same as those in the first embodiment, and thus the same parts are denoted by the same reference numerals and description thereof is omitted.

(Step 3c) As described above, the center and diameter of the wafer W that does not interfere with the cleaning nozzle 60 and the first gas nozzle 70 from the center of the wafer W toward the peripheral edge of the first cleaning nozzle 60 and the first gas nozzle 70. Are moved to the second cleaning liquid supply start position and the second N2 gas supply start position set at the same circle position, the second cleaning liquid nozzle 60A and the second gas nozzle 80 are moved from the standby position 88 to the second position. The cleaning liquid supply start position and the second N 2 gas supply start position are moved, and the discharge amount (350 mL) of the cleaning liquid L from the second cleaning liquid nozzle 60A to the boundary surface between the liquid film and the drying region D is (350 mL). (Min) (for example, 250 mL / min) is discharged (supplied), and N2 gas G is discharged (supplied) from the second gas nozzle 80 to the boundary surface between the liquid film and the dry region D. The second cleaning liquid nozzles 60A and a second gas nozzle 80 toward the periphery of the wafer W with the first cleaning nozzle 60 and the first gas nozzle 70 moves concentrically (see Figure 10 (b)).

  In this case, the moving speed V of the first cleaning nozzle 60 and the first gas nozzle 70 and the moving speed V of the second cleaning liquid nozzle 60A and the second gas nozzle 80 are set to be the same, and the first gas nozzle 70 and the second gas nozzle 70 are moved. The N2 gas discharge (supply) position of the gas nozzle 80 is synchronized. In this way, the first and second cleaning liquid nozzles 60 and 60A and the first and second gas nozzles 70 and 80 are moved concentrically to the peripheral edge of the wafer W, whereby the boundary surface between the liquid film and the drying region D is obtained. Of the cleaning liquid L that could not be removed by the N 2 gas G discharged from the first gas nozzle 70 is removed by the N 2 gas G discharged from the second gas nozzle 80. (See FIG. 10C).

According to the fourth embodiment, after developing the wafer W on which the fine and high aspect ratio circuit pattern P is formed, the first cleaning liquid is held while the wafer W is held horizontally and rotated around the central axis. The cleaning liquid L is discharged (supplied) from the nozzle 60 to the center of the surface of the wafer W to form a liquid film on the surface of the wafer W, and then the surface of the wafer W is rotated from the first gas nozzle 70 while rotating the wafer W. N2 gas G is discharged (supplied) from the center toward the periphery of the wafer W to remove the liquid film on the surface of the wafer W to form a dry region D. Thereafter, while rotating the wafer W, the center and diameter of the wafer W where the first cleaning liquid nozzle 60 and the first gas nozzle 70 do not interfere with the cleaning nozzle 60 and the first gas nozzle 70 are set to the same circular position. The second cleaning liquid nozzle 60 </ b> A that moves toward the periphery from the second cleaning liquid supply start position and the second N 2 gas supply start position when moved to the second cleaning liquid supply start position and the second N 2 gas supply start position The cleaning liquid L is discharged (supplied) to the boundary surface between the liquid film and the drying region D from the second gas nozzle 80, and the N 2 gas G is supplied from the second gas nozzle 80 to the boundary surface between the liquid film and the drying region D. and the first gas nozzle 70 by moving concentrically toward a second cleaning liquid nozzles 60A and a second gas nozzle 80 to the peripheral edge of the wafer W, a liquid film formed on the wafer W surface Removing the cleaning liquid L remaining between the circuit patterns by controlling the boundary surface of the drying area D that is formed by removing the film in the drying zone D to (discharged). With this configuration of the fourth embodiment, the N 2 gas discharged (supplied) from the second gas nozzle 80 is the cleaning liquid L adhering to the hydrophobic exposed portion after being exposed and developed using the water-repellent protective film. The amount deficient due to liquid tearing between the liquid film produced by the unexposed portion having hydrophobicity and the liquid film at the boundary surface of the dry region D is supplemented by the cleaning liquid L discharged (supplied) from the second cleaning liquid nozzle 60A. Thus, the interface between the liquid film and the dry region D can be controlled. Therefore, a high cleaning effect can be realized and development defects can be reduced to almost none. Thereby, the moving speed of the cleaning liquid nozzle 60 can be increased, and effective cleaning can be performed in a shorter time.

  In the series of steps 1, 2, and 3c described above, the control computer 90 reads out the control program stored in the memory of the control computer 90, and controls to operate each mechanism described above based on the read command. It is executed by outputting a signal.

<Fifth Embodiment>
Next, a fifth embodiment of the substrate cleaning apparatus and method according to the present invention will be described with reference to FIGS. The substrate cleaning apparatus and method according to the fifth embodiment are applied when the liquid processing surface of the wafer W has a lot of hydrophobicity, and the second gas nozzle 80 in the substrate cleaning apparatus used in the first embodiment. Instead, a second cleaning nozzle 60A for discharging (supplying) cleaning liquid L such as pure water is provided on the surface of the wafer W at the boundary surface between the liquid film and the dry region D. That is, the substrate cleaning apparatus of the fifth embodiment is formed by supplying a cleaning liquid nozzle 60 (hereinafter referred to as a first cleaning liquid nozzle 60) for supplying a cleaning liquid to the wafer surface and supplying the cleaning liquid from the first cleaning liquid nozzle 60. A gas that is a drying fluid, such as N2 (nitrogen) or Ar (argon), is discharged to the liquid film to form a dry region D, and a cleaning liquid is formed on the boundary surface between the liquid film and the dry region. This is a case where the second cleaning liquid nozzle 60 </ b> A for repairing the breakage and tearing of the liquid film on the boundary surface by discharging (supplying) the liquid is provided.

  In this case, as shown in FIG. 12, the second cleaning liquid nozzle 60A is fixed to a nozzle arm 66A via a nozzle holding portion 65A, and this nozzle arm 66A is connected to a moving base 67A equipped with a lifting mechanism. Has been. The moving base 67A, for example, a nozzle moving mechanism 400 including a ball screw mechanism, a timing belt mechanism, and the like is configured to be movable in the lateral direction along the guide member 57A without interfering with the developer nozzle 50, for example. Yes. Further, a standby part (standby position) 68A of the second cleaning liquid nozzle 60A is provided on the other outer side of the standby part 58 of the developer nozzle 50 of the cup 40.

  The second cleaning liquid nozzle 60A is connected to a cleaning liquid supply source 63A via a cleaning liquid supply pipe 61A provided with a flow rate regulator 62A. The flow rate and supply time of the cleaning liquid are adjusted by a flow rate regulator 62A such as a flow rate adjustment valve, for example. The cleaning liquid supply source 63A is connected to a temperature regulator (not shown) equipped with a heating device such as a heater to adjust the cleaning liquid to a predetermined temperature. The cleaning liquid supply pipe 61A is surrounded by a temperature maintaining member (not shown) including a heat insulating member including the flow rate regulator 62A, and the cleaning liquid is supplied onto the wafer W from the second cleaning liquid nozzle 60A. The cleaning liquid is maintained at a predetermined temperature until it is supplied.

  In the fifth embodiment, the other parts are the same as those in the first embodiment, and therefore the same parts are denoted by the same reference numerals and description thereof is omitted.

  A substrate cleaning method by the substrate cleaning apparatus (method) of the fifth embodiment configured as described above will be briefly described with reference to FIGS. 11 to 13A. In this embodiment, Step 1 and Step 2 are the same as those in the first embodiment, and thus the same parts are denoted by the same reference numerals and description thereof is omitted.

(Step 3d) As described above, the center and diameter of the wafer W that does not interfere with the cleaning nozzle 60 and the first gas nozzle 70 from the center of the wafer W toward the peripheral edge of the first cleaning nozzle 60 and the first gas nozzle 70. Are moved to the second cleaning liquid supply start position set at the same circle position, the second cleaning liquid nozzle 60A is moved from the standby position 68A to the second cleaning liquid supply start position, and the second cleaning liquid nozzle 60A is moved. The second cleaning liquid is discharged (supplied) from the first cleaning liquid nozzle 60 at a boundary surface between the liquid film and the drying region D at a lower amount (for example, 250 mL / min) than the discharge amount (350 mL / min) from the first cleaning liquid nozzle 60. The nozzle 60A is moved concentrically toward the periphery of the wafer W together with the first cleaning nozzle 60 and the first gas nozzle 70 (see FIG. 13B).

  In this case, the moving speed V of the first cleaning nozzle 60 and the first gas nozzle 70 and the moving speed V of the second cleaning liquid nozzle 60A are the same, and the cleaning liquid of the first cleaning liquid nozzle 60 and the second cleaning liquid nozzle 60A is used. The discharge (supply) position of L is synchronized.

  In this way, the first cleaning liquid nozzle 60, the second gas nozzle 70, and the second gas cleaning liquid nozzle 60A are moved concentrically to the peripheral edge of the wafer W, whereby the liquid collapses at the boundary surface between the liquid film and the drying region D. And can control liquid tearing. Note that the cleaning liquid L that could not be removed by the N2 gas discharged (supplied) from the first gas nozzle 70 remains in the exposure unit but is removed (discharged) by the centrifugal force generated by the rotation of the wafer W (FIG. 13C). )reference).

According to the fifth embodiment, after developing a wafer W on which a fine and high aspect ratio circuit pattern P using a super-water-repellent resist is developed, the wafer W is held horizontally and is rotated around the central axis. , The cleaning liquid L is discharged (supplied) from the first cleaning liquid nozzle 60 to the center of the surface of the wafer W to form a liquid film on the surface of the wafer W, and then the wafer W is rotated while being rotated. The N2 gas G is discharged (supplied) from the center of the surface of the wafer W toward the periphery of the wafer W from one gas nozzle 70 to remove the liquid film on the surface of the wafer W, thereby forming a dry region D. Thereafter, while rotating the wafer W, the center and diameter of the wafer W where the first cleaning liquid nozzle 60 and the first gas nozzle 70 do not interfere with the cleaning nozzle 60 and the first gas nozzle 70 are set to the same circular position. when moved to the second cleaning liquid supply starting position, discharging the cleaning liquid L on the boundary surface of the drying area D from the second cleaning liquid nozzle 60A and a liquid film moves toward the periphery from the second cleaning liquid supply start position (feed) At the same time, the first cleaning liquid nozzle 60, the first gas nozzle 70, and the second cleaning liquid nozzle 60A are moved concentrically toward the peripheral edge of the wafer W, thereby forming a liquid film and a liquid film formed on the surface of the wafer W. An appropriate liquid film is formed by repairing the liquid collapse and tearing of the liquid film by controlling the boundary surface of the dry region D formed by removing the liquid. With this configuration of the fifth embodiment, the liquid film produced by the hydrophobic unexposed portion having hydrophobicity after being exposed and developed using the water-repellent protective film and the liquid film at the boundary surface of the dry region D It is possible to control the boundary surface between the liquid film and the dry region D by supplementing the amount deficient due to the liquid tearing with the cleaning liquid L discharged (supplied) from the second cleaning liquid nozzle 60A. Note that the cleaning liquid L that could not be removed by the N 2 gas discharged (supplied) from the first gas nozzle 70 adheres to the exposure unit, but can be removed by the centrifugal force generated by the rotation of the wafer W. Therefore, a high cleaning effect can be realized and development defects can be reduced to almost none. Thereby, the moving speed of the cleaning liquid nozzle 60 can be increased, and effective cleaning can be performed in a shorter time.

  In the series of steps 1, 2, and 3d described above, the control computer 90 reads the control program stored in the memory of the control computer 90, and controls for operating each of the mechanisms described above based on the read command. It is executed by outputting a signal.

<Sixth Embodiment>
Next, a sixth embodiment of the substrate cleaning apparatus and method according to the present invention will be described with reference to FIG. In the sixth embodiment, the cleaning liquid L is discharged from the first cleaning liquid nozzle 60 located above the center of the wafer W onto the surface of the wafer W without moving the first cleaning liquid nozzle 60 from the center of the wafer W to the periphery ( Supply) to form a liquid film, and then the cleaning liquid L is removed and dried in the same manner as in the above embodiment. The substrate cleaning apparatus and method according to the sixth embodiment will be described below in the case where the substrate cleaning apparatus having the same structure as that of the first embodiment shown in FIGS. 3 and 4 is used.

  In the sixth embodiment, the other parts are the same as those in the first embodiment, so the same parts are denoted by the same reference numerals and description thereof is omitted.

  The cleaning process of the sixth embodiment is performed by the following steps.

(Step 1a) The cleaning liquid nozzle 60 is disposed above the center of the wafer W, for example, at a height of 15 mm from the surface of the wafer W. For example, the cleaning liquid L is discharged (supplied) from the cleaning liquid nozzle 60 to the center of the wafer W at a flow rate of 350 mL / min for 5 seconds, for example, while rotating the spin chuck 30 at a rotation speed of 1000 rpm, for example. The cleaning liquid L spreads from the center of the wafer W toward the periphery by centrifugal force, and the developer is replaced with the cleaning liquid L. Thus, a liquid film of the cleaning liquid L is formed on the entire surface of the wafer W (see FIG. 14A).

  (Step 2a) Next, while rotating the spin chuck 30 at 1500 rpm or more, for example, 2500 rpm, the nozzle arm 66 moves the first gas nozzle 70 above the center of the wafer W, and the first gas nozzle 70 While discharging (supplying) N2 gas to the surface of the wafer W, the wafer W moves from the center of the wafer W to a predetermined position toward the periphery of the wafer W (see FIG. 14B). In this way, the N2 gas G is blown from the first gas nozzle 70 toward the periphery of the wafer W from the center of the wafer W, and the liquid film is thinned and removed to form the dry region D (FIG. 14B). )reference). The dry region D refers to a region where the surface of the wafer W is exposed by the evaporation of the cleaning liquid L, and here includes a case where the cleaning liquid L remains between circuit patterns of the wafer W. The core of the dry region D spreads from the center to the supply position of the cleaning liquid L by centrifugal force.

(Step 3e) As described above, the center and diameter of the wafer W that does not interfere with the first gas nozzle 70 from the center of the wafer W toward the periphery are set to positions on the same circle . when it moved to the N2 gas supply start position of 2, the second nozzle 80 moves from the standby position 88 to the second N2 gas supply starting position, on the boundary surface between the liquid film from the second gas nozzle 80 drying area D While discharging (supplying) the N 2 gas G, the second gas nozzle 80 moves concentrically toward the periphery of the wafer W together with the first gas nozzle 70 (see FIG. 14C). In this case, the moving speed V of the first gas nozzle 70 and the moving speed V of the second gas nozzle 80 are the same, and the N2 gas discharge (supply) positions of the first gas nozzle 70 and the second gas nozzle 80 are synchronized. ing. In this way, by moving the first and second gas nozzles 70 and 80 concentrically to the periphery of the wafer W, it is possible to control liquid collapse and liquid tearing at the interface between the liquid film and the drying region D. The residue of the cleaning liquid L that could not be removed by the N2 gas G discharged from the first gas nozzle 70 can be removed by the N2 gas G discharged from the second gas nozzle 80 (see FIG. 14D). .

  Note that the discharge (supply) of the N 2 gas G from the second gas nozzle 80 may be stopped at the periphery of the wafer W before the discharge (supply) of the N 2 gas G from the first gas nozzle 70 is stopped. . Even in this manner, even if the discharge (supply) of the N 2 gas G from the second gas nozzle 80 is stopped, the residue of the cleaning liquid L can be shaken off by the centrifugal force at the peripheral edge of the wafer W.

  In the series of steps 1a, 2a, and 3e described above, the control computer 90 reads out the control program stored in the memory of the control computer 90, and controls to operate each mechanism described above based on the read instructions. It is executed by outputting a signal.

<Seventh embodiment>
In the above-described embodiment, the second gas nozzle 80 or the second gas nozzle 80 and the second cleaning liquid nozzle 60 </ b> A are arranged so that the center of the wafer W that does not interfere with the first cleaning liquid nozzle and the first gas nozzle 70 by one nozzle arm 86 and The case of moving from the second N 2 gas supply start position (and / or the second cleaning liquid supply start position) set to a position on the same circle to the periphery of the wafer W has been described. A plurality of second gas nozzles The 80 or the second gas nozzle 80 and the second cleaning liquid nozzle 60A may be moved in directions that do not interfere with each other by the nozzle arms 86A and 86B.

  For example, as shown in FIG. 15A, two sets of the second gas nozzle 80 and the second cleaning liquid nozzle 60A are arranged at a position of 120 degrees horizontal with respect to the first cleaning liquid nozzle 60 and the first gas nozzle 70.

  A substrate cleaning method using the substrate cleaning apparatus (method) configured as described above will be briefly described with reference to FIG. 15A. In this embodiment, Step 1 and Step 2 are the same as those in the first embodiment, and thus the same parts are denoted by the same reference numerals and description thereof is omitted.

(Step 3f) The center and diameter of the wafer W that does not interfere with the cleaning nozzle 60 and the first gas nozzle 70 are set to positions on the same circle from the center of the wafer W toward the peripheral edge of the cleaning nozzle 60 and the first gas nozzle 70. When the second cleaning liquid supply start position and the second N 2 gas supply start position are moved, the second cleaning liquid supply start of the two sets of the second cleaning liquid nozzle 60A and the second gas nozzle 80 from the standby position 88 is started. Position and the second N 2 gas supply start position (specifically, a position of 120 degrees horizontal with respect to the first cleaning nozzle 60 and the first gas nozzle 70), and the liquid is discharged from the second cleaning liquid nozzle 60A. The cleaning liquid L is discharged (supplied) to the boundary surface between the film and the dry region D, and the N2 gas G is discharged (supplied) from the second gas nozzle 80 to the boundary surface between the liquid film and the dry region D, thereby The 60A and a second gas nozzle 80 toward the periphery of the first cleaning nozzle 60 and the wafer W with the first gas nozzle 70 moves concentrically (see FIG. 15A (b)). In this manner, the first cleaning liquid nozzle 60 and the first gas nozzle 70 and the two sets of the second cleaning liquid nozzle 60A and the second gas nozzle 80 are concentrically formed to the periphery of the wafer W at an interval of 120 degrees. By moving, it is possible to control liquid collapse and liquid tearing at the boundary surface between the liquid film and the dry region D, and to remove 2 residues of the cleaning liquid L that could not be removed by the N 2 gas discharged from the first gas nozzle 70. The N2 gas discharged from the second gas nozzle 80 in the set can be removed (see FIG. 15A (c)). Accordingly, the N2 gas discharged (supplied) from the two second gas nozzles 80 onto the surface of the wafer W can be efficiently blown to the boundary surface between the liquid film and the drying region D, so that the drying efficiency is improved and the drying time is increased. Can be shortened.

  Further, instead of the above embodiment, three sets of the second gas nozzle 80 and the second cleaning liquid nozzle 60A are arranged at a position of 90 degrees horizontally with respect to the first cleaning liquid nozzle 60 and the first gas nozzle 70, The three sets of the second gas nozzle 80 or the second gas nozzle 80 and the second cleaning liquid nozzle 60A may be moved by the nozzle arms 86A, 86B, 86C in directions that do not interfere with each other.

  For example, as shown in FIG. 15B, three sets of the second gas nozzle 80 and the second cleaning liquid nozzle 60A are arranged at a position of 90 degrees horizontal with respect to the first cleaning liquid nozzle 60 and the first gas nozzle 70.

  A substrate cleaning method using the substrate cleaning apparatus (method) configured as described above will be briefly described with reference to FIG. 15B. In this embodiment, Step 1 and Step 2 are the same as those in the first embodiment, and thus the same parts are denoted by the same reference numerals and description thereof is omitted.

(Step 3g) Positions of the first cleaning nozzle 60 and the first gas nozzle 70 on the circle having the same center and diameter of the wafer W that do not interfere with the cleaning nozzle 60 and the first gas nozzle 70 from the center of the wafer W toward the periphery. When moving to the second cleaning liquid supply start position and the second N 2 gas supply start position set to the second set of the second cleaning liquid nozzle 60A and the second gas nozzle 80 from the standby position 88 to the second Move to the cleaning liquid supply start position and the second N 2 gas supply start position (specifically, the positions 90 degrees and 180 degrees horizontal with respect to the first cleaning nozzle 60 and the first gas nozzle 70), and the second The cleaning liquid L is discharged (supplied) from the cleaning liquid nozzle 60A to the boundary surface between the liquid film and the dry region D, and N2 gas is discharged (supplied) from the second gas nozzle 80 to the boundary surface between the liquid film and the dry region D. Second The cleaning liquid nozzles 60A and a second gas nozzle 80 toward the periphery of the wafer W with the first cleaning nozzle 60 and the first gas nozzle 70 moves concentrically (see FIG. 15B (b)). In this way, the first cleaning liquid nozzle 60 and the first gas nozzle 70, and the three sets of the second cleaning liquid nozzle 60A and the second gas nozzle 80 are concentrically formed to the peripheral edge of the wafer W at an interval of 90 degrees. By moving, it is possible to control the liquid collapse and liquid breakage at the boundary surface between the liquid film and the dry region D, and the residue of the cleaning liquid L that could not be removed by the N 2 gas discharged from the first gas nozzle 70 is 3 The N2 gas discharged from the second gas nozzle 80 in the set can be removed (see FIG. 15B (c)). Accordingly, the N2 gas discharged (supplied) from the two second gas nozzles 80 onto the surface of the wafer W can be efficiently blown to the boundary surface between the liquid film and the drying region D, so that the drying efficiency is improved and the drying time is increased. Can be shortened.

  The series of steps 1, 2, 3f, 1, 2 and 3g described above is performed by the control computer 90 reading out the control program stored in the memory of the control computer 90, and each of the mechanisms described above based on the read instructions. This is executed by outputting a control signal for operating.

<Eighth Embodiment>
Next, an eighth embodiment of the substrate cleaning apparatus and method according to the present invention will be described with reference to FIGS. 16 and 16A. As shown in FIG. 16A, in the eighth embodiment, the second dry fluid supply nozzle is an organic solvent discharge nozzle 80G (hereinafter referred to as “an organic solvent discharge nozzle 80G”) that discharges a highly volatile organic solvent such as isopropyl alcohol (IPA) onto the surface of the wafer W. IPA discharge nozzle 80G). In this case, the IPA discharge nozzle 80G is connected to an IPA supply source 80l via an IPA supply pipe 80k provided with a flow rate regulator 80j. In the eighth embodiment, the other parts are the same as those in the first embodiment, so the same parts are denoted by the same reference numerals and description thereof is omitted.

According to the eighth embodiment configured as described above , the IPA discharge nozzle 80G is moved from the position on the circle having the same center and diameter of the wafer W to the periphery of the wafer W while rotating the wafer W. The IPA is discharged from the discharge nozzle 80G and the cleaning liquid L remaining between the circuit patterns in the dry region D is replaced with the IPA, so that it can be dried and removed earlier.

  A substrate cleaning method according to the eighth embodiment configured as described above will be briefly described with reference to FIGS. 16 and 16A. In the eighth embodiment, step 1 and step 2 are the same as those in the first embodiment, and thus the same parts are denoted by the same reference numerals and description thereof is omitted.

(Step 3h) As shown in FIG. 16A, the first cleaning liquid nozzle 60 and the first gas nozzle 70 are moved from the central portion of the wafer W toward the peripheral edge of the wafer W, and are spread over the entire surface of the wafer W. The dry region D is formed, and the first cleaning nozzle 60 and the first gas nozzle 70 are moved from the center of the wafer W toward the periphery, and the center and diameter of the wafer W that does not interfere with the cleaning nozzle 60 and the first gas nozzle 70 are the same. When moving to the second dry fluid (IPA) supply start position set at the upper position, the IPA discharge nozzle 80G positioned at the standby position 88 is moved from the standby position 88 to the second dry fluid while the wafer W is rotated. (IPA) Moves to the supply start position, discharges (supplies) IPA from the IPA discharge nozzle 80G, and uses the IPA discharge nozzle 80G together with the first cleaning nozzle 60 and the first gas nozzle 70. Moves concentrically towards the W periphery (see FIG. 16 (b)). As a result, the cleaning liquid L remaining between the circuit patterns in the dry region D is replaced with IPA and removed by drying (see FIGS. 16B and 16A). Further, the IPA discharge nozzle 80G moves to the peripheral edge of the wafer W to reliably remove (discharge) the cleaning liquid L remaining between the circuit patterns of the wafer W (see FIG. 16C).

  (Step 4) After the IPA discharge nozzle 80G moves to the peripheral edge of the wafer W and removes (discharges) the cleaning liquid L remaining between the circuit patterns of the wafer W, the rotational speed of the wafer W is set to 2000 rpm, for example. Drying is performed by shaking off micro-level droplets on the wafer W by centrifugal force. At the same time, the first cleaning liquid nozzle 60, the first gas nozzle 70, and the IPA discharge nozzle 80G are returned to the standby position.

  In the series of steps 1, 2, 3h, and 4 described above, the control computer 90 reads the control program stored in the memory of the control computer 90, and operates the above-described mechanisms based on the read instructions. This is executed by outputting the control signal.

<Other embodiments>
The present invention has been described above with reference to several embodiments. However, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the matters included in the appended claims. It is.

  For example, in the first to third embodiments, the case where the second gas nozzles 80 and 80A are moved from a predetermined position of the wafer W toward the peripheral edge by one nozzle arm 86 has been described, but the same as in the seventh embodiment. In addition, a plurality (a plurality of sets) of the second gas nozzles 80 and 80A may be moved in the radial direction from the center of the wafer W by a plurality of nozzle arms.

  In the above embodiment, the first cleaning liquid nozzle 60 and the first gas nozzle 70 are integrally fixed to the common nozzle arm 66, but may be fixed to individual nozzle arms. In this case, since the first gas nozzle 70 is arranged above the surface of the wafer W only when N2 gas is discharged, it is possible to prevent the mist of the cleaning liquid L from adhering to the first gas nozzle 70 and causing dew condensation. can do.

  In the above embodiment, the case where the liquid processing apparatus (method) according to the present invention is applied to the substrate cleaning apparatus has been described. However, the present invention is not limited to the substrate cleaning apparatus, and the processing liquid supply unit is provided on the surface of the substrate such as a wafer. To a liquid processing apparatus that forms a liquid film of a processing liquid by supplying a processing liquid from the drying fluid supply unit, and supplies a drying fluid to the surface of the substrate from a drying fluid supply unit to remove the liquid film to form a drying region and perform a drying process. Is also applicable.

  The present invention can be applied not only to a silicon wafer but also to a glass substrate for a flat panel display.

50 Developer nozzle 60 First cleaning liquid nozzle (first processing liquid supply unit)
60A Second cleaning liquid nozzle (second processing liquid supply unit)
63, 63A Cleaning liquid supply source 65, 65A, 85 Nozzle holding part 66, 66A, 86 Nozzle arm 68A, 88 Standby position 70 First gas nozzle (first dry fluid supply part)
73 N2 gas supply source 80 Second gas nozzle (second drying fluid supply unit)
80G IPA discharge nozzle 90 Control computer (control means)
DESCRIPTION OF SYMBOLS 100 Substrate cleaning apparatus 300 1st cleaning liquid nozzle and gas nozzle moving mechanism 400 2nd cleaning liquid nozzle and gas nozzle moving mechanism

Claims (17)

A substrate holder for horizontally holding the substrate;
A rotation mechanism for rotating the substrate holder around the rotation center axis;
A first processing liquid supply unit for supplying a processing liquid to the surface of the substrate;
A first drying fluid supply unit for supplying a drying fluid to the substrate;
A second drying fluid supply unit for supplying a drying fluid to the substrate;
A first moving mechanism for moving the first dry fluid supply unit from the center of the substrate toward the periphery;
Second drying in which the center and the diameter of the substrate that do not interfere with the first drying fluid supply unit between the center and the periphery of the substrate are set at the same circular position. A second moving mechanism that moves from the fluid supply start position toward the periphery of the substrate;
A control unit that controls driving of the rotation mechanism, the processing liquid supply unit, the first and second dry fluid supply units, and the first and second moving mechanisms,
While the substrate is rotated by the control unit, a processing liquid is supplied from the first processing liquid supply unit to the center of the surface of the substrate to form a liquid film, and the first film is formed from the center of the substrate toward the periphery. The drying fluid is supplied from the drying fluid supply unit to remove the liquid film on the substrate surface to form a drying region, and the first drying fluid supply unit has the second drying fluid supply start position and the center of the substrate. And when the fluid moves to a position on a circle having the same diameter, the drying fluid flows from the second drying fluid supply unit toward the peripheral edge of the substrate from the second drying fluid supply unit to the boundary surface between the liquid film and the drying region. And the first dry fluid supply unit and the second dry fluid supply unit move concentrically toward the periphery of the substrate. In the liquid processing apparatus of Claim 1,
A liquid processing apparatus comprising a plurality of the second dry fluid supply units, wherein the plurality of second dry fluid supply units are formed to be movable by the second moving mechanism. In the liquid processing apparatus of Claim 1,
The liquid processing apparatus, wherein the second dry fluid supply unit is formed in a convex arc shape toward the periphery of the substrate. In the liquid processing apparatus in any one of Claims 1 thru | or 3,
The apparatus further comprises a third moving mechanism that moves the first processing liquid supply unit from the center of the substrate toward the periphery, and the driving of the third moving mechanism is controlled by the control unit. Liquid processing equipment. In the liquid processing apparatus of Claim 4,
The first dry fluid supply unit is disposed on the rear side with respect to the moving direction of the first processing liquid supply unit, and follows the movement of the first processing liquid supply unit, so that the first dry fluid is supplied. A liquid processing apparatus, wherein the supply unit moves. In the liquid processing apparatus of Claim 4 or 5,
The liquid processing apparatus, wherein the first moving mechanism and the third moving mechanism are a common moving mechanism. In the liquid processing apparatus in any one of Claim 1 thru | or 6,
A standby position for waiting the second dry fluid supply unit outward from the peripheral edge of the substrate held by the substrate holding unit; and the control unit causes the first dry fluid supply unit to be centered on the substrate. When moving from the edge toward the periphery, the second drying fluid supply unit is positioned at the standby position, and the first drying fluid supply unit is positioned at the second drying fluid supply start position and the center of the substrate. And the second dry fluid supply unit is moved to the second dry fluid supply start position, and then the first dry fluid supply unit and the second dry fluid supply unit are moved to a position on the same circle . A liquid processing apparatus, wherein the drying fluid supply unit moves concentrically toward the periphery of the substrate. In the liquid processing apparatus in any one of Claim 1 thru | or 7,
The liquid processing apparatus, wherein the supply of the drying fluid from the second drying fluid supply unit at the peripheral edge of the substrate is stopped before the supply from the first drying fluid supply unit. In the liquid processing apparatus of Claim 1,
A second processing liquid supply unit for supplying a processing liquid to the substrate;
The first processing liquid supply unit and the second dry fluid supply unit are arranged between the first processing liquid supply unit and the first periphery between the center and the periphery of the substrate with the second processing liquid supply unit first. The second processing liquid supply start position and the second drying fluid supply start position, which are set to positions on the same circle, where the center and diameter of the substrate do not interfere with the dry fluid supply section of the substrate move toward the periphery. A moving mechanism of
A control unit that controls driving of the second processing liquid supply unit and the second moving mechanism, and
The control unit causes the first processing liquid supply unit and the first dry fluid supply unit to have the same center and diameter of the substrate as the second processing liquid supply start position and the second dry fluid supply start position. When moved to the upper position , the boundary between the liquid film and the drying region from the second processing liquid supply unit toward the periphery of the substrate from the second processing liquid supply start position and the second drying fluid supply start position. The processing liquid is supplied to the surface, and the drying fluid is supplied from the second drying fluid supply unit. The first processing liquid supply unit, the first drying fluid supply unit, the second processing liquid supply unit, and the second 2. A liquid processing apparatus, wherein the two dry fluid supply sections move concentrically toward the periphery of the substrate. In the liquid processing apparatus according to claim 9,
A liquid processing apparatus comprising a plurality of the second processing liquid supply unit, the second drying fluid supply unit, and the second moving mechanism. A substrate holder for horizontally holding the substrate;
A rotation mechanism for rotating the substrate holder around the rotation center axis;
First and second processing liquid supply units for supplying a processing liquid to the substrate;
A first drying fluid supply unit for supplying a drying fluid to the substrate;
A first moving mechanism for moving the first processing liquid supply unit and the first dry fluid supply unit from the center of the substrate toward the periphery with the first processing liquid supply unit first;
The second processing liquid supply unit is set at a position on the same circle where the center and diameter of the substrate do not interfere with the first processing liquid supply unit and the first drying fluid supply unit between the center and the periphery of the substrate. A second moving mechanism that moves toward the periphery from the second processing liquid supply start position,
A control unit that controls driving of the rotation mechanism, the first and second processing liquid supply units, the first dry fluid supply unit, and the first and second moving mechanisms;
While the substrate is rotated by the control unit, the processing liquid is supplied from the first processing liquid supply unit to the center of the surface of the substrate to form a liquid film, and the drying fluid is supplied from the first drying fluid supply unit. And the liquid film on the substrate surface is removed to form a dry region, and the first processing liquid supply unit and the first drying fluid supply unit are connected to the second processing liquid supply start position and the center of the substrate. And when the diameter moves to a position on the same circle, the processing liquid is supplied from the second processing liquid supply section toward the peripheral edge of the substrate from the second processing liquid supply start position to the boundary surface between the liquid film and the drying region. And the first processing liquid supply unit, the first dry fluid supply unit, and the second processing liquid supply unit move concentrically toward the periphery of the substrate. apparatus. The liquid processing apparatus according to claim 11, wherein
A liquid processing apparatus comprising a plurality of the second processing liquid supply unit and the second moving mechanism. A process of forming a liquid film on the surface of the substrate by holding the substrate horizontally and supplying the processing liquid from the first processing liquid supply unit to the center of the surface of the substrate while rotating around the central axis of the substrate. When,
A step of supplying a drying fluid from the center of the surface of the substrate toward the periphery of the substrate while rotating the substrate to remove a liquid film on the surface of the substrate to form a drying region; ,
While the substrate is rotated, the second drying fluid supply is started such that the first drying fluid supply unit does not interfere with the first drying fluid supply unit, and the center and diameter of the substrate are set at the same circle. When the position and the center and diameter of the substrate move to a position on the same circle, the liquid film and the drying region are moved from the second drying fluid supply unit that moves toward the periphery from the second drying fluid supply start position. Supplying a drying fluid to the boundary surface, and moving the first drying fluid supply unit and the second drying fluid supply unit concentrically toward the periphery of the substrate;
The liquid processing method characterized by comprising. In the liquid processing method of Claim 13,
While the substrate is rotated, the supply of the second processing liquid is started in which the center and the diameter of the substrate are set to the same circle so that the first drying fluid supply unit does not interfere with the first drying fluid supply unit. When the position and the center and the diameter of the substrate move to a position on the same circle, the liquid film and the drying region are moved from the second processing liquid supply unit that moves toward the periphery from the second processing liquid supply start position. The process liquid is supplied to the boundary surface, and the liquid film and the drying liquid are dried from the second dry fluid supply part that moves from the second dry fluid supply start position toward the periphery following the second process liquid supply part. Supplying a drying fluid to the boundary surface of the region, and moving the first drying fluid supply unit, the second processing liquid supply unit, and the second drying fluid supply unit concentrically toward the periphery of the substrate; ,
The liquid processing method characterized by further comprising. A process of forming a liquid film on the surface of the substrate by holding the substrate horizontally and supplying the processing liquid from the first processing liquid supply unit to the center of the surface of the substrate while rotating around the central axis of the substrate. When,
A step of supplying a drying fluid from the center of the surface of the substrate toward the periphery of the substrate while rotating the substrate to remove a liquid film on the surface of the substrate to form a drying region; ,
While the substrate is rotated, the supply of the second processing liquid is started in which the center and the diameter of the substrate are set to the same circle so that the first drying fluid supply unit does not interfere with the first drying fluid supply unit. When the position and the center and the diameter of the substrate move to a position on the same circle, the liquid film and the drying region are moved from the second processing liquid supply unit that moves toward the periphery from the second processing liquid supply start position. Supplying a treatment liquid to the boundary surface, and moving the first dry fluid supply unit and the second treatment liquid supply unit concentrically toward the periphery of the substrate;
The liquid processing method characterized by comprising. In the liquid processing method in any one of Claim 13 thru | or 15,
The first processing liquid supply unit is moved from the center of the surface of the substrate toward the periphery, the processing liquid is supplied from the first processing liquid supply unit to form a liquid film on the surface of the substrate, and A liquid processing method comprising: supplying a drying fluid from a first drying fluid supply section that follows the first processing liquid supply section to remove a liquid film on a substrate surface to form a dry region. A computer-readable storage medium storing software for causing a computer to execute a control program,
17. A storage medium for liquid processing, wherein the control program causes the computer to control the liquid processing apparatus so that the process according to claim 13 is executed at the time of execution.

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