KR20140004376A - Substrate processing system and controlling method therefor - Google Patents

Abstract

A substrate processing system without the stoppage of deposition work and a control method thereof are suggested. The substrate processing system according to an embodiment of the present invention includes a plurality of process chambers sequentially processing a substrate by receiving the substrate, and a control system controlling the process chambers according to a process parameter. At least one among the plurality of process chambers includes a main chamber processing the substrate according to the process parameter and a spare chamber controlled by an operating parameter determined in the control system according to the operating state of the main chamber. [Reference numerals] (110) Control system; (120) Power supply part

Description

Substrate Processing System and Controlling Method Therefor}

TECHNICAL FIELD The present invention relates to substrate manufacturing equipment, and more particularly, to a substrate processing system and a control method thereof.

The substrate processing apparatus is a device that performs processes such as physical / chemical deposition, ion implantation, and coating on a target substrate in a vacuum chamber, and has been developed from a cluster type to an inline type.

In-line type substrate processing apparatus, that is, continuous substrate processing system is a system in which a process proceeds while passing through chambers in which substrates are arranged in a row in a state in which a deposition source is stopped. This is an advantageous advantage.

The substrate to be processed may be, for example, a transparent conductive film such as a solar cell, a liquid crystal display device, a touch panel, an organic electroluminescent device, a plasma display, a field emission device, a flexible display, or the like, and the substrate to be processed is gradually enlarged. It is becoming.

1 is a configuration diagram of a general continuous substrate processing system.

Referring to FIG. 1, a continuous substrate processing system 1 according to an embodiment of the present invention includes a loading chamber 11, a process chamber 12, and an unloading chamber 13.

Each chamber, preferably the process chamber 12, is controlled in a vacuum and a gate can be provided between each chamber. In addition, the substrate is transferred through the process chamber 12 under the control of the control system 15 to perform substrate processing as desired. The power supply 17 supplies power to the respective chambers 11, 12, 13 under the control of the control system 15.

The substrate to be processed that moves from the loading chamber 11 to the unloading chamber 13 through the process chamber 12 is transferred in a direction specified by substrate transfer units provided in each chamber. The substrate transfer part may be configured with, for example, a linear rail, a movable conveyor belt, a roller, or the like, and the substrate may be installed in a horizontal or vertical state with respect to the ground.

The process chamber 12 is configured such that a plurality of unit process chambers 12-I and 1 ≦ i ≦ n are arranged in a line. Each unit process chamber 12-i is discharged with a source of the desired type and amount according to the control of the control system 15 to designate a target material on a substrate moving the unit process chamber 12-i. Deposit to thickness.

The control system 15 executes the control software stored in the memory and is responsible for the overall control of the operation of the continuous substrate processing. Specifically, the apparatus includes an input device for performing power supply control, substrate transfer control, deposition source temperature control, and the like, and an output device for monitoring the status of the continuous substrate processing system 1 for receiving a command from an operator.

In the continuous substrate processing system 1, the substrate moves at a constant speed for sufficient and uniform deposition during material deposition on the substrate. After the deposition is completed, a mask replacement, an encapsulation process, a modularization process, and the like are performed.

2 is an illustration of a chamber applied to a continuous substrate processing system.

2, the unit process chamber 12-i may include a driving unit 121, an evaporation source 123, an evaporation material 125, a sensor 127, a sub shutter 129A, and a main shutter 129B. Can be.

The driver 121 transfers the substrate S introduced through the one gate at a predetermined speed in the chamber 12-i and is carried out through the other gate.

The evaporation source 123 is installed at a designated position in the chamber 12-i, is heated to a temperature designated by a heater (not shown), and the evaporation material 125 is accommodated in the evaporation source 123 so that the evaporation source 123 is heated. As it is, it is evaporated and deposited on the processing surface of the substrate (S). The sensor 127 detects the evaporation amount of the evaporation material in real time to control the deposition rate of the evaporation material 125.

On the other hand, a sub-shutter 129A for opening or closing the evaporation source 123 is installed above the evaporation source 123. The sub shutter 129A includes a shutter plate 1291 and shutter driving means 1293 to rotate and move the shutter plate 1291 by the shutter driving means 1293.

In addition, a main shutter 129B is positioned between the sensor 127 and the substrate S. The main shutter 129B detects whether the evaporation state of the evaporation material 125 is stabilized by using the sensor 127 before the thin film deposition process is started on the substrate S. It serves to prevent deposition on the driver 121.

When the evaporation material is deposited on the substrate S in the continuous substrate processing system 1, the shutter 129A is opened to control the evaporation material 125 in the evaporation source 123 to be deposited on the substrate S at a constant speed. .

However, when a failure occurs such as the evaporation source 123 is broken, the evaporation material 125 may flow out of the evaporation source 123 to short-circuit the hot wire, and the power may be turned off. In addition, if a defect occurs in the sensor itself, there is a problem that cannot use the evaporation material associated with the sensor. Therefore, it is desirable to stop the use of the evaporation material corresponding to the evaporation source 123 or the sensor 127 in which the fail occurred before the system-wide problem occurs.

Accordingly, the replacement of the evaporation source 123 or the sensor 127 that causes the failure in the state in which the substrate processing process is stopped must be performed, and thus, the process is delayed and the production efficiency is lowered.

Embodiments of the present invention provide a substrate processing system and a method of controlling the same, which may continue the deposition process even when the evaporation material is stopped due to a defect of an evaporation source or a sensor.

Embodiments of the present invention provide a substrate processing system and a control method thereof capable of correcting errors in a deposition process.

A substrate processing system according to an embodiment of the present invention includes a plurality of unit process chambers for receiving a substrate and sequentially performing substrate processing; And a control system for controlling the process chamber in accordance with process parameters, wherein at least one of the plurality of unit process chambers comprises: a main chamber for processing the substrate according to the process parameters; and subsequent to the main chamber. And a spare chamber for processing the substrate and controlled by an operating parameter determined by the control system according to an operating state of the main chamber.

A substrate processing system according to another embodiment of the present invention includes a process chamber group including a plurality of unit process chambers arranged in a line; And a control system for controlling the process chamber in accordance with process parameters, wherein at least one of the plurality of unit process chambers comprises: a main chamber for processing a substrate according to the process parameters; and transferring the substrate from the main chamber. And a spare chamber arranged adjacent to each other, the spare chamber being controlled by an operating parameter determined by the control system according to the operating state of the main chamber.

In another aspect, a substrate processing system according to another embodiment of the present invention includes a substrate processing system including at least one deposition chamber arranged in a row to sequentially process a substrate to be transported at a predetermined speed, wherein the deposition chamber is A main chamber into which the substrate is pre-introduced; And a spare chamber receiving a substrate from the main chamber and controlled according to an operating state of the main chamber.

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On the other hand, the control method of the substrate processing system according to an embodiment of the present invention includes a plurality of unit process chambers for sequentially processing the substrate, and a control system for controlling the unit process chamber, wherein the plurality of unit process chambers A control method of a substrate processing system including at least one main chamber and a spare chamber subsequent to the main chamber, the control method comprising: at least one main chamber provided in the main chamber according to a process parameter preset by the control of the control system; Heating the evaporation material in one evaporation source; Determining whether to open or close the shutter above the evaporation source as a fail signal for at least one of the evaporation sources provided in the main chamber is detected before the substrate is introduced into the main chamber; Determining, by the control system, an operating parameter of the spare chamber based on the fail signal and the process parameter; And performing substrate processing according to the operating parameter as the substrate is introduced into the spare chamber.

According to the present technology, when an error occurs in a unit process chamber, an error may be corrected in a neighboring unit process chamber, and thus substrate processing may be performed at high speed without interrupting work.

1 is a block diagram of a typical continuous substrate processing system,
2 is an illustration of a chamber applied to a continuous substrate processing system;
3 is a configuration diagram of a continuous substrate processing system according to an embodiment of the present invention;
4 is an exemplary view of the deposition chamber shown in FIG. 3;
5 is an exemplary view of a unit process chamber applied to the present invention;
6a and 6b is another illustration of a unit process chamber applied to the present invention,
7 is a flowchart illustrating a control method of a continuous substrate processing system according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. In addition, hereinafter, the present invention will be described by taking an in-line type continuous substrate processing system as an example. However, the present invention is not limited thereto, and the present invention may be applied to various substrate processing systems such as a cluster type. In addition, a situation in which an abnormality occurs in the main chamber is when the state of at least one evaporation source included in the main chamber is confirmed as a fail, or the state of at least one sensor included in the main chamber is confirmed as a fail. Define as a case.

3 is a configuration diagram of a continuous substrate processing system according to an embodiment of the present invention.

The substrate processing system 100 according to an embodiment of the present invention may include a control system 110, a power supply unit 120, a loading chamber 140, a process chamber 130, and an unloading chamber 150. .

Each chamber, preferably the process chamber 130, is controlled in a vacuum state, and a gate may be provided between the chambers. In addition, the substrate is transferred through the process chamber 130 under the control of the control system 110 to perform substrate processing as desired. The power supply unit 120 supplies power to the chambers 130, 140, and 150 under the control of the control system 110.

The process chamber 130 includes a plurality of unit process chambers 131, 133, 135, 137,..., In particular, a pair of unit process chambers disposed adjacent to each other constitute the deposition chambers 1310 and 1320.

For example, the deposition chamber 1310 is disposed on the side where the substrate is pre-introduced, that is, on the loading chamber 140 side, and on the side where the substrate is post-introduced, i.e., on the unloading chamber 150 side. A spare chamber 133 may be included. The main chamber 131 deposits a thin film on the substrate by the designated evaporation material. In addition, the spare chamber 133 receives the substrate drawn from the main chamber 131 under the control of the control system 110 according to the operating state of the main chamber 131, that is, the operating state of the evaporation material in the main chamber 131. The thin film is deposited using the same purpose as the main chamber 131 on the substrate drawn out from the next unit process chamber 135 or the substrate drawn from the main chamber 131, and then moved to the next unit process chamber 135. I can withdraw it.

The control system 110 executes the control software stored in the memory to be responsible for the overall operation of the continuous substrate processing. Specifically, the control unit may perform power control, substrate transfer control, deposition source temperature control, and the like, and may include an input device for receiving a command from an operator and an output device for monitoring the status of the continuous substrate processing system 100. In addition, the control system 110 monitors the state of each process chamber 130, in particular, the state of the evaporation source or evaporation material provided in the process chamber 130. In particular, the control system 110 of the present invention, when a failure occurs in a specific unit process chamber (especially an evaporation source) using a predetermined evaporation material, the deposition operation by the corresponding evaporation material using the next unit process chamber The unit process chambers are controlled to accomplish this.

FIG. 4 is an exemplary view of the deposition chamber shown in FIG. 3 and illustrates the deposition chamber 1310.

The deposition chamber 1310 includes a main chamber 131 and a spare chamber 133, and the spare chamber 133 has an extension line of an installation position of the evaporation source 1313 in the main chamber 131, that is, the main chamber 131. The evaporation source 1333 is installed at a position corresponding to the installation position of the internal evaporation source.

That is, referring to FIG. 4, each of the main chamber 131 and the spare chamber 133 includes the driving units 1311 and 1331, the evaporation sources 1313 and 1333, the evaporation materials 1315 and 1335, the sensors 1317 and 1337, and The sub shutters 1319A and 1339A and the main shutters 1319B and 1339B may be included. The main shutters 1319B and 1339B detect the evaporation materials 1315 and 1335 while the evaporation materials 1315 and 1335 are stabilized by using the sensors 1317 and 1337 before the thin film deposition process is started on the substrate S. 1335 prevents deposition on the substrate S or the driving units 1311 and 1331.

The driving units 1311 and 1331 transfer the substrate S drawn through one gate at a predetermined speed and carry it out through the other gate under the control of the control system 110.

The evaporation sources 1313 and 1333 are installed at designated locations in the chambers 131 and 133 and are heated to a temperature designated by a heater (not shown) under the control of the control system 110, and the evaporation materials 1315 and 1335 are The evaporation sources 1313 and 1333 are accommodated in the evaporation sources 1313 and 1333, and as the evaporation sources 1313 and 1333 are heated, they are evaporated and deposited on the processing surface of the substrate S. The sensors 1317 and 1337 are driven under the control of the control system 110 to sense the amount of evaporation to control the deposition rates of the evaporation materials 1315 and 1335.

Meanwhile, sub-shutters 1319A and 1339A are installed on the evaporation sources 1313 and 1333 to open or close the evaporation sources 1313 and 1333. The sub shutters 1319A and 1339A include a shutter plate and a shutter driving means to rotate the shutter plate by the shutter driving means under the control of the control system 110.

In this continuous substrate processing system 100, for example, it is assumed that the evaporation material 1315 of the main chamber 131 operates normally. In this case, the control system 110 opens the sub shutter 1319A to evaporate the heated evaporation material 1315 in the evaporation source 1313 to form a thin film having a desired thickness on the substrate S. When the substrate S is taken out of the main chamber 131, the spare chamber 133 does not deposit a thin film on the substrate to be introduced under the control of the control system 110, that is, the sub shutter 1339A is closed. In the state, the driver 1331 transfers the substrate to the unit process chamber of the next stage.

As another example, the case where the evaporation material 1315 of the main chamber 131 does not operate normally due to a defect in the evaporation source 1313 of the main chamber 131 will be described. In this case, if the defective evaporation source 1313 continues to operate, it causes a system-wide error, so the control system 110 stops using the evaporation source 1313 and closes it with the sub shutter 1319A. The substrate S is transferred from the main chamber 131 to the spare chamber 133. The control system 100 opens the sub-shutter 1335A of the spare chamber 133 and the evaporation material 1335 heated by the evaporation source 1333, that is, the evaporation material 1315 to be used in the main chamber 131. The same evaporation material 1335 is evaporated to form a thin film on the substrate S.

In one embodiment of the present invention, the evaporation material 1335 in the spare chamber 133 may be a preheated state, heated to a target temperature (evaporation temperature), or a non-heated state in an atmospheric state, but is not limited thereto. . That is, the control of the evaporation material 1335, the evaporation source 1333, and the like in the spare chamber 133 may be appropriately controlled in consideration of the substrate transfer time of the continuous substrate processing system 100, the substrate processing time in the unit process chamber, and the like. Can be.

In one embodiment of the present invention, the substrate S to be treated is evaporated deposits on the substrate processing surface such as a liquid crystal display, a plasma display panel, organic light emitting diodes, etc. Any object can be used as long as it is a member which can form a thin film.

In addition, the substrate S may be transported and processed in various forms such that the substrate processing surface is vertical, horizontal, or inclined with respect to the ground during transfer and processing, and the evaporation material 1315 and the processing surface are formed. Any configuration can be adopted as long as it is opposed to the configuration.

To operate the process chambers as a deposition chamber comprising a main chamber and a spare chamber as described above, the control system 110 may be a microprocessor, which may be designed to be programmable.

The control system 110 may store various applications, data, and the like necessary for the operation of the substrate processing system, and may store the control parameters required for the substrate processing. In addition, the control system 110 may include an input unit for receiving a control command, data, etc. from the operator, and an output unit for providing the operator with a processing status, a progress status, an error status, and the like of the substrate processing system 100.

In addition, the control system 110 drives a transfer means (eg, a roller) to transfer the substrate from the loading chamber 140 to the unloading chamber 150 through the process chamber 130 as the process starts. In addition to controlling the motor and driver for the control, the type, amount, temperature, etc. of the process source is injected in the process chamber 130.

In a preferred embodiment of the present invention, control system 110 receives an operating state from each process chamber 130. As described above, the process chamber 130 may be configured to include a main chamber and a spare chamber, and the control system 110 sets the operating state of the spare chamber according to the operating state of the main chamber. If the operation state of the main chamber is normal, the control system 110 controls the spare chamber to transfer the substrate to the next unit process chamber without the deposition operation. On the other hand, if an abnormality occurs in the main chamber, the control system 110 controls the spare chamber to be deposited on the substrate to a target thickness by using an evaporation material having the same purpose as the evaporation material used in the main chamber in the spare chamber.

More specifically, the control system 110 receives signals from the process chamber, preferably the main chamber, as to whether there is an abnormal state of operation. And, if it is confirmed that a failure occurred in the evaporation source of the specific chamber, the shutter of the evaporation source is closed.

Then, in response to the received fail signal, a parameter for operating the spare chamber is set. For example, if the main chamber is in normal operation, the spare chamber may only set parameters such that the substrate transfer operation is performed. If an abnormality occurs in the main chamber, information on the target real-time evaporation amount is obtained, and an operating parameter of the spare chamber is determined using the information.

Once the operating parameters of the spare chamber are determined, the control system 110 controls the spare chamber with reference thereto to simply move the substrate or to perform a deposition operation at a desired thickness, that is, a target real-time evaporation amount.

In the above description, the configuration in which the evaporation source and the evaporation material are disposed in one unit processing chamber as an example has been described as an example, but the unit processing chamber applied to the present invention is not limited thereto.

5 is an exemplary view of a unit process chamber applied to the present invention.

The unit process chamber 300 shown in FIG. 5 includes a pair of evaporation sources 320A and 320B in the chamber, and evaporation materials 330A and 330B are accommodated in the respective evaporation sources 320A and 320B.

In addition, sub-shutters 350A and 350B for opening and closing the evaporation sources 320A and 320B are installed above the evaporation sources 320A and 320B, and evaporation rates of the evaporation materials 330A and 330B evaporated from the evaporation sources 320A and 320B are respectively measured. 340A, 340B.

When the unit process chamber 300 includes a pair of evaporation sources 320A and 320B in this manner, an evaporation source in which one of the sub shutters (for example, 350A) is opened and the main shutter 360 is unopened ( The thin film is deposited on the substrate S while being moved to 320B side. When the evaporation material 330A filled in the evaporation source 320A is used, the sub shutter 350A is closed while the sub shutter 350B is opened. When the main shutter 360 is moved to the evaporation source 320A, deposition may be performed using the evaporation material 330B filled in the evaporation source 320B.

6A and 6B are other exemplary views of a unit process chamber applied to the present invention.

As the size of the substrate manufactured using the continuous substrate processing system gradually increases in size, the area of the substrate to be deposited is also increased by the evaporation material. Can be filled and evaporated to perform the deposition operation.

The process chamber 400 shown in FIGS. 6A and 6B selectively opens and closes the thin film by selectively opening and closing the first evaporation source group 420A including at least two evaporation sources and the second evaporation source group 420B including at least two evaporation sources. Represents a process chamber for deposition.

Each evaporation source 421A, 423A, 425A constituting the first evaporation source group 420A is opened or closed by respective sub shutters 450A: 451A, 453A, 455A as shown in FIG. 6B. Similarly, each of the evaporation sources 421B, 423B, and 425B constituting the second evaporation source group 420B is opened and closed by respective sub-shutters 450BA: 451B, 453B, and 455B as shown in Fig. 6B.

The selection of the first evaporation source group 420A and the second evaporation source group 420B may be made by moving the main shutter 460. That is, the main shutter 460 is configured to move in the same direction as the substrate transfer direction along the rail (not shown). The main shutter 460 is horizontally moved to shield the second evaporation source group 420B during the deposition using the first evaporation source group 420A, and the first evaporation source group during the deposition using the second evaporation source group 420B. The main shutter 460 is horizontally moved to shield 420A.

In addition, each of the evaporation sources 421A, 423A, 425A / 421B, 423B, 425B constituting each of the evaporation source groups 420A, 420B, as described above, each of the sub-shutters 451A, 453A, 455A) / (451B, 453B). , 455B), and each of the evaporation sources 421A, 423A, 425A / 421B, 423B, 425B can be powered on and off individually.

Therefore, when a failure occurs in any one of the evaporation sources, the deposition is performed in a state where the shutter on the evaporation source is closed. Accordingly, the thin film will be formed in a non-uniform state on the substrate. This can be corrected in the spare chamber, and in this case, vapor deposition can be performed by opening only the evaporation source at a position corresponding to the evaporation source at the position where the fail occurred in the main chamber among the evaporation sources of the spare chamber.

For example, assume that a failure occurs in the first evaporation source 421A of the first evaporation source group 420A. Since the evaporation source in the spare chamber is installed on an extension line of the evaporation source installation position of the main chamber, that is, at a corresponding position, only the evaporation source at a position corresponding to the first evaporation source 421A is opened among the plurality of evaporation sources constituting the spare chamber, When the evaporation source is subjected to correction deposition in a shielded state, a thin film having a uniform thickness is formed on the substrate.

FIG. 7 is a flowchart illustrating a control method of a continuous substrate processing system according to an exemplary embodiment of the present invention, in which a fail is detected in a process chamber before deposition is started on a specific substrate.

The substrate is controlled to move at a constant speed at a specified speed from the beginning to the end of the process chamber.

The process chamber, ie, the main chamber, into which the substrate is to be introduced, is heated to a temperature at which the evaporation material is designated by the control of the control system 110 (S101). In this case, a fail signal for the corresponding main chamber may be received by the control system 110 (S103).

The control system 110 controls the driving unit to uniformly transfer the substrate to be transported to the main chamber (S105), and closes the shutter of the evaporation source in which an abnormality occurs in response to the fail signal (S107). If the process chamber has a configuration in which a plurality of evaporation sources are used in one deposition process as shown in FIG. 6, the control system 110 closes the shutter of the evaporation source in which an abnormality occurs in step S107, while operating normally. The shutter of the evaporation source is opened.

For example, when a failure occurs in the first evaporation source 421A in the main chamber in which deposition is performed by the first evaporation source group 420A of FIG. 6, the first evaporation source 421A is closed by the shutter 451A. The deposition is performed only by the evaporation material evaporated through the second and third evaporation sources 423A and 425A.

In another embodiment, the control system 110 includes all of the groups containing the evaporation source 421A, i.e., the first evaporation source group 420A, if a failure occurs in a particular evaporation source (e.g., the first evaporation source 421A). It is also possible to close the shutter 450A on the evaporation source.

Accordingly, deposition is performed on the substrate by the evaporation material evaporated through the evaporation source in which the shutter is opened (S109), and the substrate on which the primary deposition is performed in step S109 enters the spare chamber. The control system 110 sets an operating parameter of the spare chamber according to the fail signal received in step S103, and controls the spare chamber accordingly (S111), so that the deposition shortage by the closed evaporation source is corrected in step S107. (S113).

Here, the controlling of the spare chamber (S111) may include selecting a shutter to be opened or closed in an evaporation source of the spare chamber, and controlling a target real-time increase in amount of the evaporation material.

As a result, the substrate processing surface on which the deposition is not performed in the main chamber is controlled to be deposited in the spare chamber, so that a desired material may be formed on the processing surface of the substrate to a desired thickness.

In the control flow diagram of FIG. 7, the same principle can be applied to the case where the main chamber and the spare chamber each process a substrate by a single evaporation source. That is, when a fail signal to the main chamber is received before the deposition process starts, the substrate is moved to the spare chamber through the main chamber while the evaporation source in the main chamber is stopped, and the spare chamber is based on the process parameters initially set. The deposition operation is performed.

In the above description, the in-line substrate processing system has been described as an example, but the present invention is not limited thereto, and the present invention can be applied to a cluster type substrate processing system in a similar principle. In this case, when a plurality of process chambers sequentially perform deposition on a substrate, when a failure occurs in the preceding process chamber, the deposition process is performed on the portion where the failure occurs by using the process chamber that subsequently processes the substrate as a spare chamber. This can be done.

Thus, those skilled in the art will appreciate that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100: Continuous Substrate Processing System
110: control system
120: Power supply
130: process chamber
140: loading chamber
150: unloading chamber
1310, 1320, 1330: Deposition Chamber
131, 135: main chamber
133, 137: spare chamber

Claims (15)

A plurality of unit process chambers which receive a substrate and sequentially perform substrate processing; And
A control system for controlling the process chamber in accordance with process parameters;
At least one of the plurality of unit process chambers, the main chamber for processing the substrate in accordance with the process parameters; And
A spare chamber processing the substrate subsequent to the main chamber, the spare chamber being controlled by an operating parameter determined in the control system according to the operating state of the main chamber;
Substrate processing system comprising a. A process chamber group including a plurality of unit process chambers arranged in a line;
A control system for controlling the process chamber in accordance with process parameters;
At least one of the plurality of unit process chambers, the main chamber for processing the substrate in accordance with the process parameters; And
A spare chamber arranged adjacent to receive the substrate from the main chamber and controlled by the operating parameter determined in the control system according to an operating state of the main chamber;
Substrate processing system comprising a. The method according to any one of claims 1 to 3,
The main chamber includes at least one evaporation source, and when the operating state of the evaporation source is normal, the operating parameter is determined to simply transfer the substrate to a subsequent unit process chamber. The method according to any one of claims 1 to 3,
The main chamber includes at least one evaporation source, and when the state of any one of the at least one evaporation source is identified as a fail, the operating parameter is determined with reference to the process parameter,
And the spare chamber processes the substrate according to the determined operating parameter and transfers the substrate to a subsequent unit process chamber. 5. The method of claim 4,
The main chamber may include a driving unit for transferring the substrate at a predetermined speed;
The at least one evaporation source installed on a surface facing the driving unit and filled with evaporation material; And
And at least one shutter respectively formed on the evaporation source and configured to open or close the evaporation source top.
And the control system is configured to close the shutter of at least the failed evaporation source when a failure occurs in at least one of the evaporation sources. The method of claim 5, wherein
And the at least one shutter is simultaneously opened when the evaporation source of the main chamber is in normal operation. The method according to claim 6,
The spare chamber includes at least one evaporation source installed at a position corresponding to the evaporation source installation position in the main chamber,
And processing the substrate by opening a shutter of an evaporation source in the spare chamber corresponding to a position of an evaporation source in which a fail in the main chamber occurs when a failure occurs in at least one of the evaporation sources of the main chamber. 5. The method of claim 4,
The main chamber may include a driving unit for transferring the substrate at a predetermined speed;
A first evaporation source group installed on a surface facing the driving unit and including at least one evaporation source each filled with an evaporation material;
A second evaporation source group each comprising at least one evaporation source filled with evaporation material;
A first sub shutter including at least one shutter configured to open or close an upper portion of each evaporation source included in the first evaporation source group;
A second sub shutter including at least one shutter configured to open or close an upper portion of each evaporation source included in the second evaporation source group; And
A main shutter for selectively opening or blocking an upper portion of the first evaporation source group and the second evaporation source group,
And the control system is configured to close at least one sub shutter of the failed evaporation source when a failure occurs in at least one of the evaporation sources. The method of claim 8,
When the first evaporation source group and the second evaporation source group of the main chamber operate normally, the first sub shutter and the second sub shutter are selectively opened, and at least one shutter included in the selected sub shutter is simultaneously opened. Substrate processing system that is opened. The method of claim 8,
The spare chamber includes at least one evaporation source installed at a corresponding position of the evaporation source installation position in the main chamber,
And processing the substrate by opening a sub-shutter of the evaporation source in the spare chamber corresponding to the position of the evaporation source in which the fail in the main chamber occurs when a failure occurs in at least one of the evaporation sources of the main chamber. A substrate processing system including at least one deposition chamber arranged in a row to sequentially process substrates to be transported at a predetermined speed,
The deposition chamber may include a main chamber in which a substrate is pre-leaved; And
A spare chamber receiving a substrate from the main chamber and controlled according to an operation state of the main chamber;
Substrate processing system comprising a. The method of claim 11,
The main chamber includes at least one evaporation source, and when the operating state of the evaporation source is normal, the spare chamber simply transfers the substrate to a subsequent deposition chamber. The method of claim 11,
The main chamber includes at least one evaporation source, and when the state of any one of the at least one evaporation source is identified as a fail, the spare chamber corrects the substrate state and transfers the substrate to a subsequent unit process chamber. A plurality of unit process chambers for sequentially processing a substrate, and a control system for controlling the unit process chamber, wherein the plurality of unit process chambers are configured to process the substrate subsequent to at least one main chamber and the main chamber; A control method of a substrate processing system including a spare chamber,
Heating the evaporation material in at least one evaporation source provided in the main chamber according to a process parameter preset by the control of the control system;
Determining whether to open or close the shutter above the evaporation source as a fail signal for at least one of the evaporation sources provided in the main chamber is detected before the substrate is introduced into the main chamber;
Determining, by the control system, an operating parameter of the spare chamber based on the fail signal and the process parameter; And
Performing substrate processing by the operating parameter as the substrate is introduced into the spare chamber;
Control method of the substrate processing system comprising a. 15. The method of claim 14,
The performing of the substrate processing in the spare chamber may include performing substrate processing by opening a shutter above the evaporation source in the spare chamber corresponding to the position of the evaporation source where the fail signal in the main chamber is detected. Way.

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