KR20140001275A - Apparatus and method for processing semiconductor - Google Patents

Apparatus and method for processing semiconductor Download PDF

Info

Publication number
KR20140001275A
KR20140001275A KR1020120067636A KR20120067636A KR20140001275A KR 20140001275 A KR20140001275 A KR 20140001275A KR 1020120067636 A KR1020120067636 A KR 1020120067636A KR 20120067636 A KR20120067636 A KR 20120067636A KR 20140001275 A KR20140001275 A KR 20140001275A
Authority
KR
South Korea
Prior art keywords
wafer
processing liquid
chuck
heater
vibrator
Prior art date
Application number
KR1020120067636A
Other languages
Korean (ko)
Inventor
배정관
Original Assignee
에스브이에스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스브이에스 주식회사 filed Critical 에스브이에스 주식회사
Priority to KR1020120067636A priority Critical patent/KR20140001275A/en
Publication of KR20140001275A publication Critical patent/KR20140001275A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to an apparatus and a method for processing a semiconductor wafer capable of filling a via hole of a wafer with a conductor. More specifically, the apparatus for processing a semiconductor wafer includes a wafer chuck supporting and fixing the backside of the wafer having a via hole; a chuck rotation part rotating the wafer chuck; a chamber surrounding the wafer fixated to the wafer chuck; and a heater transferring heat to a processing liquid supplied onto the wafer surrounded by the chamber.

Description

Apparatus and Method for processing semiconductor

The present invention relates to a semiconductor wafer manufacturing apparatus and method for filling an insulator layer, a barrier layer and a conductor in a via hole of a wafer.

Due to miniaturization and large capacity of electronic products, high integration density of semiconductors has been required. As a result, the directivity of the semiconductor has been remarkably developed. Recently, however, a method of increasing the directivity has been limited, and a 3D package method of stacking a plurality of chips in one package has been developed. There was a method of stacking a plurality of chips by a 3D packaging method and then connecting wires at corners. However, this method has a disadvantage in that it requires not only an increase in area but also an intermediate layer between the chips.

In order to overcome such a problem, a through silicon via (TSV) method in which a vertical electrical connection portion is formed in a chip is proposed. In order to use the TSV method, it is necessary to fill a via hole formed in a narrow and long via hole with a conductor, instead of simply forming a circuit on a semiconductor surface. This creates a completely different problem than plating the surface.

In particular, the conductors, etc. are not filled in the via holes formed by the narrow and long bubbles, so that effective and stable measures are required.

SUMMARY Embodiments of the present invention have been made to solve the above problems, and to provide a semiconductor wafer manufacturing apparatus and method for effectively and stably filling the via hole of the wafer with an insulator layer, a barrier layer and a conductor.

In order to solve the above-mentioned problems, an embodiment of the present invention provides a wafer chuck for supporting and fixing a rear surface of a wafer on which a via hole is formed; A chuck rotating unit for rotating the wafer chuck; A chamber surrounding the wafer fixed to the wafer chuck; It provides a semiconductor wafer manufacturing apparatus comprising a; heater for transferring heat to the processing liquid supplied on the wafer surrounded by the chamber.

The wafer chuck is formed of a thermally conductive material, and the heater may be installed below the wafer chuck to allow heat transfer through the wafer chuck.

The wafer chuck protrudes downward in the center and penetrates the heater, and has a central protrusion connected to the driving shaft of the chuck driver; The heater may have a central through hole formed therein to allow the central protrusion of the wafer chuck to pass therethrough.

A portion of the inner circumference formed in a tube shape opened in the circumferential direction and formed to surround the outer circumference of the wafer chuck to recover the processing liquid scattered during rotation of the wafer chuck, and a lower side of the processing liquid recovery portion; It further includes an abdomen for covering; The heater may be installed in a space formed by the wafer chuck, the processing liquid recovery part, and the cover part.

The heater may be formed of a plurality of heater members having a concentric circle structure so as to be formed in a disc shape corresponding to the wafer, and the temperatures of the plurality of heater members may be independently controlled.

A semiconductor wafer manufacturing apparatus, characterized in that formed with a plurality of heater members.

It may further include a vibrator frame provided to be able to move up and down on the upper side of the chamber, and a vibrator which is provided below the vibrator frame to be able to contact the supplied processing liquid when the vibrator frame is lowered to vibrate the processing liquid. .

The vibrator may be formed in a bar shape so as to be rotatable in the vibrator frame.

On the other hand, the present invention is another category, the via hole processing step of placing a wafer with a via hole is surrounded by a chamber, supplying a processing liquid for filling a conductor in the via hole of the wafer, and maintaining a temperature of the processing liquid by a heater step; A treatment liquid removal step of discharging the treatment liquid after the via hole treatment process step; And a drying step of removing the processing liquid remaining on the wafer by rotating the wafer after the processing liquid removing step.

The via hole treating step may further include oscillating the supplied processing liquid by a vibrator.

The cleaning solution may further include a cleaning step of rotating the wafer at a lower speed than the drying step and applying the cleaning solution on the wafer, and then discharging the cleaning solution.

As described above, according to the present invention, various effects including the following can be expected. However, the present invention does not necessarily achieve the following effects.

First, according to an embodiment of the present invention, by maintaining the temperature of the processing liquid to be supplied, it is possible to prevent the temperature of the processing liquid from lowering continuously and effectively activate the processing liquid.

 In addition, by vibrating the processing liquid, the via hole of the wafer can be activated so that the processing liquid can be more easily and seamlessly filled, and bubbles in the via hole of the wafer can be easily removed by an indirect impact caused by the vibration of the processing liquid.

In addition, the via hole treatment process of the wafer, cleaning and drying can be solved by a single apparatus, which is effective.

1 is a conceptual cross-sectional view of a semiconductor wafer manufacturing apparatus of an embodiment of the present invention.
2 is an enlarged cross-sectional view of portion 'A' of FIG.
3 is a schematic diagram showing a combined state of the heater and the treatment liquid recovery part of FIG.
4 is a flowchart illustrating a method of manufacturing a semiconductor wafer in accordance with an embodiment of the present invention.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings.

1 is a conceptual cross-sectional view of a semiconductor wafer manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged cross-sectional view of portion 'A' of FIG. 1, and FIG. 3 is a view illustrating a coupling state of the heater and the processing liquid recovery unit of FIG. 1. It is a schematic diagram.

As shown in these drawings, the semiconductor wafer manufacturing apparatus of an embodiment of the present invention includes a wafer chuck 110 for holding the back surface of the wafer 200 on which a via hole is formed, and a chuck pivot for rotating the wafer chuck 110 ( 120, the annular chamber 100 surrounding the wafer 200 fixed to the wafer chuck 110, and the processing liquid 210 supplied on the wafer 200 surrounded by the chamber 100 to vibrate. The processing liquid supplied on the wafer 200 surrounded by the vibrator 130, the processing liquid recovery unit 170 for recovering the processing liquid 210 scattered during the rotation of the wafer chuck 110, and the chamber 100. It may include a heater 180 for transferring the heat to (210).

The wafer chuck 110 has a lower portion at the center of the supporting portion 112 to minimize heat dissipation of the supporting portion 112 supporting the wafer 200 and the heater 180 installed under the wafer chuck 110. It may include a central protrusion 114 protruding toward and penetrating the heater 180. The supporting part 112 may be rotatably installed on the open lower side of the chamber 100 and cover the open lower side of the chamber 100. The supporting part 112 may be provided with a component for stably fixing the wafer 200 by a vacuum pressure or the like. The central protrusion 114 is integrally coupled with the driving shaft 122 of the chuck driving unit 120 so that the driving shaft 122 of the chuck driving unit 120 may be fitted in the vertical direction so as to be rotated by receiving the rotational force ( 114a) may be formed.

In particular, the wafer chuck 110 is formed of a thermally conductive material such as aluminum so that the heat of the heater 180 installed below the wafer chuck 110 can be transferred to the processing liquid 210 through the wafer chuck 110. Can be.

The chuck rotating unit 120 may be a motor 124, etc. In this case, the motor 124 may be a servo motor to adjust the rotation speed.

The vibrator 130 may generate any vibration wave and transmit the vibration wave to the processing liquid 210. However, the vibrator 130 may be more advantageous for activating the processing liquid 210 to fill a conductor in the via hole of the wafer 200. In order to prevent the 200 from being damaged by an indirect impact due to the vibration of the processing liquid 210, a piezoelectric element or the like that generates ultrasonic waves by a piezoelectric effect may be preferable. The piezoelectric element array of the vibration difference may be designed in consideration of this point so that vibrations may occur uniformly and evenly in response to the shape of the wafer 200 (eg, the disc shaped wafer 200). .

In particular, the vibrator 130 may be installed to be in contact with the water surface of the processing liquid 210 to indirectly impact the wafer 200 with the vibration due to the processing liquid 210 therebetween. However, the vibrator 130 may be installed in the vibrator frame 140 installed to be able to move up and down on the upper side of the chamber 100 so as not to interfere with the loading / unloading of the wafer 200. It may be desirable. That is, the vibrator 130 may be positioned below the vibrator frame 140 and may be coupled to the vibrator frame 140 so that the vibrator may be vertically lifted up and down with the vibrator frame 140. The elevating device 150 for elevating the vibrator frame 140 may be implemented as a rack, a pinion, or as an elevator in various forms such as a cylinder.

In addition, the vibrator 130 may further enhance the vibration effect for activating the processing liquid 210 and may uniformly and evenly transmit vibration waves to the processing liquid 210, corresponding to the circular wafer 200. Concentric with and may be formed in a radially long bar shape in the wafer 200 to be rotatable. That is, the rotating shaft 132 of the vibrator 130 may be coupled to the vibrator frame 140 so as to be rotatable in the vertical direction.

The configuration 160 for rotating the vibrator 130 may be formed of a motor coupled to the rotating shaft 132 of the vibrator 130, and the motor for rotating the vibrator 130 may rotate the vibrator 130 while rotating the vibrator 130. It can be implemented by a servo motor method to adjust the rotational speed of the.

The processing liquid recovery part 170 is formed in an annular tube shape in which a part of the inner circumference is opened in the circumferential direction, and is formed to surround the outer circumference of the wafer chuck 110. Therefore, the wafer chuck 110 rotates to prevent the processing liquid 210 remaining on the wafer 200 from scattering to the outside. The chamber 100 is provided with a discharge port (not shown) to discharge the liquid to the treatment liquid recovery unit 170.

The processing liquid recovery unit 170 is covered by the wafer chuck 110 with the upper side of the processing unit 175 and the lower side of the processing liquid recovery unit 170. It can form an internal space that is built. The cover portion 175 may be formed as a plate as shown, and may be formed in various ways, such as a cap structure, a dome structure, as needed.

The heater 180 transfers heat to the processing liquid 210 through the wafer chuck 110, and the processing liquid recovery unit 170, the cover 175, and the wafer chuck to minimize heat loss due to heat dissipation. It may be installed in the inner space formed by (110).

The heater 180 may be formed in a disc shape corresponding to the wafer 200 so that heat transfer may be uniformly performed. In the heater 180, a central through hole 180a may be formed to allow the central protrusion 114 of the wafer chuck 110 to pass therethrough. Furthermore, the heater 180 is formed in a disk shape by the plurality of heater members 181, 182, and 183 having a concentric circle structure formed in a disc or annular shape, respectively, for a uniform temperature distribution, and the temperature of each heater member 181, 182, 183 is the heater temperature. It can be independently controlled by a heater controller that makes adjustments. In addition, each heater member (181, 182, 183) may be divided equally or differentially along the radial direction of the circle. Each heater member 181, 182, 183 may be formed of the same material, or may be formed of different materials.

Meanwhile, the treatment liquid 210 may be determined according to which of several processes for filling a conductor in the via hole of the wafer 200, for example, copper plating after forming an insulating layer in the via hole of the wafer 200. As an intermediate step before forming the conductor layer, the nickel alloy may be used as a main chemical element or a chemical element capable of acting as an adhesive.

In addition, the processing liquid 210 is a post processing liquid for cleaning the wafer 200 after the processing by the main processing liquid 210 as well as the main processing liquid 210 for filling a conductor in the via hole of the wafer 200. There may be a cleaning liquid as 210. The main treatment liquid 210 and the after treatment liquid 210 may be supplied and recovered through a separate treatment liquid supply recovery device according to chemical characteristics.

Hereinafter, a description will be given of an operation for the above-described manufacturing apparatus while describing a manufacturing method for a processing process for filling a conductor in a via hole of a semiconductor wafer 200 of the present invention.

4 is a flowchart illustrating a method of manufacturing a semiconductor wafer 200 in accordance with an embodiment of the present invention.

As shown in FIG. 4, the method for manufacturing a semiconductor wafer 200 according to the present invention is one of a plurality of processes for filling a conductor in a via hole of a wafer 200, and a via hole for filling a main processing liquid 210. The treatment step may be followed by a subsequent post-treatment step.

The via hole treatment process step can be accomplished as follows.

First, in the state in which the vibrator frame 140 is elevated above the chamber 100, the wafer 200 is loaded onto the wafer chuck 110 (S10), and the chamber 140 is lowered (S20). Next, the main processing liquid 210 is supplied into the chamber 100 through a nozzle or the like (S30). At this time, the main treatment liquid 210 is supplied at a predetermined temperature for activation, and at least the water level is supplied at a predetermined level so that the water surface touches the vibrator 130.

Then, the vibrator frame 140 is lowered so that the vibrator 130 maintains a predetermined distance from the wafer 200 on the wafer chuck 110 (S40).

After the main treatment liquid 210 is filled in the chamber 100, the vibrator 130 is driven to generate ultrasonic waves, and the vibrator 130 is rotated (S50). Then, the main processing liquid 210 is more activated by the vibrator 130, so that the processing liquid 210 can be easily filled in the via hole of the wafer 200 without gaps, and the vibration of the processing liquid 210 The bubbles existing in the via holes of the wafer 200 are removed by the indirect shock, so that the wafer 200 can be processed uniformly and evenly without defects as a whole. In addition, the heater 180 is operated to maintain the temperature at the time of supply of the processing liquid 210 in order to prevent the activation of the processing liquid 210 from being lowered and heat the heater 180 through the wafer chuck 110 through the processing liquid ( To 210).

On the other hand, the supply of the main processing liquid 210 is made before the vibrator frame 140 is lowered, or after the vibrator frame 140 is lowered through the vibrator frame 140 or the space between the vibrator frame 140 and the chamber 100. It can also be done through.

After the processing of the wafer 200 is completed, the driving and rotation of the vibrator 130 is stopped, the heater 180 is stopped (S60), the vibrator frame 140 is raised (S70), and immediately after Proceed to processing.

First, the main processing liquid 210 supplied to the chamber 100 through a nozzle or the like is discharged and recovered outside the chamber 100 (S80). At this time, the recovery of the main processing liquid 210 is preferably made after the vibrator frame 140 is lifted, as described above, it may be made in a state in which the vibrator frame 140 is lowered.

After the recovery of the main processing liquid 210, the chamber 100 is raised. (S90)

Next, the wafer chuck 110 is rotated or a cleaning liquid is applied onto the wafer 200 in a stopped state (S100). Then, the cleaning liquid may be uniformly and evenly applied on the wafer 200 by the rotation of the wafer 200, and the cleaning liquid may clean the wafer 200 more cleanly by centrifugal force. At this time, the rotation speed of the wafer chuck 110 is set at a low speed so that the cleaning of the wafer 200 is sufficiently performed by the cleaning liquid.

After the cleaning of the wafer 200 is finished, the cleaning liquid is discharged and recovered outside the chamber 100 through a nozzle or the like (S110), and the wafer chuck 110 is rotated at high speed (S120). Then, the cleaning liquid remaining on the wafer 200 is scattered and removed from the wafer 200 by centrifugal force, and the wafer 200 can be dried quickly by the rotational wind of the wafer 200.

The cleaning liquid scattered from the wafer 200 may be discharged out of the chamber 100 through the liquid recovery part.

After the wafer 200 is sufficiently dried, the rotation of the wafer 200 is stopped (S130).

As described above, the wafer 200 is unloaded from the wafer chuck 110 after the via hole treatment process and the post-treatment such as cleaning and drying are continuously performed by one device (S110).

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention.

100; Chamber 110; Wafer chuck
120; Chuck Drive 130; Oscillator
140; Oscillator frame 150; Hoist
170; Processing liquid recovery unit 175; Abdomen
180; Heater 200; wafer

Claims (10)

A wafer chuck for holding and fixing a back surface of a wafer on which a via hole is formed;
A chuck rotation unit for rotating the wafer chuck; A chamber surrounding the wafer fixed to the wafer chuck;
A heater transferring heat to a processing liquid supplied on a wafer surrounded by the chamber;
Semiconductor wafer manufacturing apparatus comprising a. The method according to claim 1,
The wafer chuck is formed of a thermally conductive material, the heater is a semiconductor wafer manufacturing apparatus, characterized in that installed below the wafer chuck so that heat transfer through the wafer chuck. The method according to claim 2,
The wafer chuck protrudes downward in the center and penetrates the heater, and has a central protrusion connected to the driving shaft of the chuck driver;
The heater is a semiconductor wafer manufacturing apparatus, characterized in that the central through-hole is formed so that the central projection of the wafer chuck penetrates. The method according to claim 2,
A portion of the inner circumference formed in a tube shape opened in the circumferential direction and formed to surround the outer circumference of the wafer chuck to recover the processing liquid scattered during rotation of the wafer chuck, and a lower side of the processing liquid recovery portion; It further includes an abdomen for covering;
And the heater is installed in a space formed by the wafer chuck, the processing liquid recovery part, and the cover part. The method according to any one of claims 1 to 3,
The heater is a semiconductor wafer manufacturing apparatus, characterized in that made of a plurality of heater members of concentric circles so as to be formed in a disc shape corresponding to the wafer, the temperature of the plurality of heater members are independently controlled. The method according to any one of claims 1 to 3,
And a vibrator frame provided to be able to move up and down on the upper side of the chamber, and a vibrator installed below the vibrator frame to be able to contact the supplied processing liquid when the vibrator frame is lowered. A semiconductor wafer manufacturing apparatus. The method of claim 6,
The vibrator is formed in a bar shape, the semiconductor wafer manufacturing apparatus, characterized in that installed on the vibrator frame to be rotatable. A via hole processing step of placing a wafer on which the via hole is formed so as to be surrounded by a chamber, supplying a processing liquid to the via hole of the wafer, and maintaining a temperature of the processing liquid by a heater;
A treatment liquid removal step of discharging the treatment liquid after the via hole treatment process step;
And a drying step of removing the processing liquid remaining on the wafer by rotating the wafer after the processing liquid removing step. The method according to claim 8,
The via hole processing step further comprises vibrating the supplied processing liquid by a vibrator. The method according to claim 8 or 9,
The semiconductor wafer further comprises a cleaning step for rotating the wafer at a lower speed than the drying step and applying the cleaning liquid on the wafer between the processing liquid removing step and the drying step, and then discharging the cleaning liquid. Manufacturing method.
KR1020120067636A 2012-06-22 2012-06-22 Apparatus and method for processing semiconductor KR20140001275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120067636A KR20140001275A (en) 2012-06-22 2012-06-22 Apparatus and method for processing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120067636A KR20140001275A (en) 2012-06-22 2012-06-22 Apparatus and method for processing semiconductor

Publications (1)

Publication Number Publication Date
KR20140001275A true KR20140001275A (en) 2014-01-07

Family

ID=50138814

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120067636A KR20140001275A (en) 2012-06-22 2012-06-22 Apparatus and method for processing semiconductor

Country Status (1)

Country Link
KR (1) KR20140001275A (en)

Similar Documents

Publication Publication Date Title
US9595434B2 (en) Apparatus and methods for manufacturing semiconductor devices and treating substrates
KR101580415B1 (en) Substrate treatment method and substrate treatment apparatus
TWI610386B (en) Substrate treatment method and substrate treatment apparatus
JP5156488B2 (en) Substrate cleaning apparatus and substrate cleaning method
JP5449953B2 (en) Substrate processing apparatus and substrate processing method
JP2011103438A (en) Substrate liquid processing apparatus, substrate liquid processing method, and computer-readable storage medium having substrate liquid processing program stored therein
KR20080030481A (en) Substrate processing method and substrate processing apparatus
US11152329B2 (en) Method of separating bonded substrate, method of manufacturing semiconductor storage device, and substrate separation apparatus
WO2017169018A1 (en) Substrate processing method and substrate processing device
JP7088810B2 (en) Board processing method and board processing equipment
JP7500128B2 (en) Wafer Processing Method
JP6238741B2 (en) Substrate processing method and substrate processing apparatus
KR20140001275A (en) Apparatus and method for processing semiconductor
KR101517819B1 (en) Apparatus and Method for processing semiconductor
JP2002332597A (en) Solution treatment apparatus and solution treatment method
CN111250455A (en) Wafer cleaning device
KR20140015650A (en) Apparatus and method for processing semiconductor
JP6417164B2 (en) LAMINATE MANUFACTURING DEVICE, LAMINATE, SEPARATING DEVICE, AND LAMINATE MANUFACTURING METHOD
JP6513852B2 (en) Substrate processing method and substrate processing apparatus
WO2022210088A1 (en) Substrate-processing apparatus and substrate-processing method
KR20140002189A (en) Apparatus for processing semiconductor
KR20080030203A (en) Apparatus and method for cleaning substrates
KR101361526B1 (en) Apparatus and Method for processing semiconductor
JP2014165349A (en) Substrate processing device, and substrate processing method
KR101361527B1 (en) Apparatus and Method for processing semiconductor

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application