KR20140002189A - Apparatus for processing semiconductor - Google Patents

Abstract

Discloses is apparatus for manufacturing a semiconductor wafer to fill a semiconductor having a via hole with an insulating layer, a barrier layer, and a conductive layer. The apparatus for manufacturing a semiconductor wafer includes a bubble removal module removing bobbles in the via hole; an insulating layer formation module forming the insulating layer in a wafer via hole where the bubble are removed; a conductive layer formation layer forming the conductive layer in the wafer via hole formed in the barrier layer; and an inter-module transfer device moving the wafer among the conductive layer formation module and the barrier layer formation module, the insulating formation module, and the bubble removal module.

Description

[0001] Apparatus for processing semiconductor devices [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer manufacturing apparatus for filling conductors, insulating layers, barrier layers, and the like into via holes in a semiconductor wafer.

Due to the miniaturization and large capacity of electronic products, high integration of semiconductors has been required. As a result, the directivity of the semiconductor has been remarkably developed. Recently, however, a method of increasing the directivity has been limited, and a 3D package method of stacking a plurality of chips in one package has been developed. There was a method of stacking a plurality of chips in a 3D packaging method and connecting the wires to the corners. However, this method has a disadvantage in that it requires not only an increase in area but also an intermediate layer between the chips.

In order to overcome such a problem, a through silicon via (TSV) method in which a vertical electrical connection portion is formed in a chip is proposed. In order to use the TSV method, a process of filling an insulating layer, a barrier layer, and a conductor into a via hole formed narrow and long in the thickness direction is required, unlike simply forming a circuit on a semiconductor surface. This creates a variety of problems that are quite different from plating on surfaces.

Conventional semiconductor forming processes include a dry process and a wet process. In the dry process, it is difficult to uniformly form a conductor in a narrow and long via hole compared with a wet process.

In the case of a wet process, a process is generally known in which a surface of a wafer is directed downward in a tank containing a chemical substance, reacted, and then cleaned. However, such a process requires a large amount of chemical substances, which is very wasteful. In addition, since the backside of the wafer and the chemical substance are coated on the surface of the wafer, the wafer must be moved to a separate apparatus for cleaning There are many problems.

In particular, certain chemicals of the wet process is toxic, there is a disadvantage that a very strict process control is required if the chemicals are transferred to another process while the coating is applied.

Embodiments of the present invention have been made to solve the above problems, it is possible to process the insulating layer, barrier layer and conductor layer in a single device in the via hole formed in the wafer, as well as to reduce the amount of chemicals used To provide a semiconductor wafer manufacturing apparatus that can reduce the number of equipment for the process.

Embodiments of the present invention provide a semiconductor wafer manufacturing apparatus for filling an insulating layer, a barrier layer, and a conductor layer in a semiconductor in which via holes are formed, to remove bubbles in the via holes. module; An insulation layer forming module for forming the insulation layer in the wafer via hole from which bubbles are removed; A barrier layer forming module for forming the barrier layer in the wafer via hole in which the insulating layer is formed; A conductor layer forming module for forming the conductor layer in the wafer via hole in which the barrier layer is formed; And an inter-module transfer device for transferring the wafer between the bubble removing module, the insulating layer forming module, the barrier layer forming module, and the conductor layer forming module.

The cleaning module may further include a cleaning module for cleaning the wafer on which the conductor layer is formed.

And, it is effective to further include; an annealing module capable of heat treatment on the wafer.

And an activation module for applying an activation material to the wafer via hole to increase adhesion to the insulating layer before the barrier layer is formed.

Here, the bubble removing module, the insulating layer forming module, the barrier layer forming module and the conductor layer forming module may be bisected with the inter-module transfer device therebetween.

As described above, according to the present invention, various effects including the following can be expected. However, the present invention does not necessarily achieve the following effects.

The semiconductor wafer manufacturing apparatus of an embodiment of the present invention can process all processes capable of processing a semiconductor wafer having via holes formed in one device.

In addition, the first annealing step and the second annealing step may be treated as one annealing module, and the first bubble removing step and the second bubble removing step may be performed by one bubble removing module, You can reduce the number.

1 to 5 are wafer cross-sectional views sequentially illustrating a process of forming a conductor on a semiconductor wafer on which via holes are formed.
6 is a plan view briefly showing the layout of a semiconductor wafer manufacturing apparatus of an embodiment of the present invention;
7 is a block diagram of a semiconductor wafer processing process using the semiconductor wafer manufacturing apparatus of the present invention.
8 is a conceptual cross-sectional view of the bubble removing module of FIG.
9 is an enlarged cross-sectional view of the upper portion of FIG. 8.
10 is a flowchart illustrating a bubble removing method of a semiconductor wafer via hole according to an embodiment of the present invention.
11 is a conceptual cross-sectional view of the insulating layer forming module of FIG. 6 of the present invention;
12 is a cross-sectional view of the center of the ramp operation of FIG. 11.
13 is a plan view of the lamp of FIG.
14 is a flow chart showing the details of the insulating layer formation and cleaning step of the present invention.
15 is a conceptual cross-sectional view of the barrier layer forming module of FIG.
16 is an enlarged cross-sectional view of a portion 'A' of FIG.
FIG. 17 is a schematic diagram illustrating an example in which the vibrator of FIG. 15 is installed in the vibrator frame. FIG.
18 is a plan view of the inside of the vibrator of FIG.
FIG. 19 is a schematic view showing a cover area of a vibrating element when the vibrator of FIG. 18 is rotated. FIG.
20 is an internal plan view showing a modification of the vibrator of FIG. 17.
21 is a plan view showing another modification of the vibrator of FIG.
FIG. 22 is a schematic diagram illustrating a combined state of the heater and the processing liquid recovery part of FIG. 15. FIG.
FIG. 23 is a block diagram showing detailed steps of forming a barrier layer of FIG. 7.
24 is a conceptual cross-sectional view (cap lifted state) of the conductor layer forming module of FIG.
FIG. 25 is a view of the cap lowered state of FIG. 24; FIG.
FIG. 26 is an enlarged view of a portion of FIG. 25; FIG.
FIG. 27 is a cross-sectional view taken along line AA of FIG. 26.
FIG. 28 is a perspective view of the second electrode and the cap of FIG. 24; FIG.
29 is a flow chart showing the detailed configuration of the conductor layer forming step.
30 to 35 are conceptual plan views according to the process sequence of the annealing module of FIG.
36 to 38 is a conceptual side view according to the process sequence of Figure 6 annealing module

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings.

Before describing the semiconductor wafer manufacturing apparatus of the embodiment of the present invention, a process of forming a conductor in the via wafer-formed semiconductor wafer manufactured by the apparatus of the embodiment of the present invention will be described with reference to FIGS.

As shown in FIG. 1, the deep via hole 2 is formed in the semiconductor wafer 1 using a technique such as etching. Next, as shown in FIG. 2, the insulating layer 3 through which electricity is not applied is applied. Next, as shown in FIG. 3, a barrier layer (barrier layer) 4 is applied to the surface of the insulating layer 3 to prevent diffusion of copper. Next, as shown in FIG. 4, the via hole is filled with a conductor layer 5 such as copper. Then, by polishing the surface of the wafer using a mechanical chemical method, as shown in Fig. 5, a semiconductor wafer having a conductor filled in the via hole is manufactured.

A semiconductor wafer manufacturing apparatus of an embodiment of the present invention relates to an apparatus for manufacturing a wafer in which an insulating layer, a barrier layer, and a conductor layer are filled in a via hole shown in FIG. 4.

Fig. 6 is a plan view briefly showing the layout of the semiconductor wafer manufacturing apparatus of the embodiment of the present invention.

As shown in FIG. 6, the semiconductor wafer manufacturing apparatus of the embodiment of the present invention includes a bubble removing module 1000 for removing bubbles in a via hole, and an insulating layer for forming the insulating layer in the wafer via hole from which bubbles are removed. Module 2000, a barrier layer forming module 3000 for forming the barrier layer in the wafer via hole in which the insulating layer is formed, and a conductor layer forming module 4000 for forming the conductive layer in the wafer via hole in which the barrier layer is formed. ), A cleaning module 9000 for cleaning the wafer on which the conductor layer is formed, an annealing module 5000 capable of heat treatment to the wafer, and an adhesive force on the insulating layer before the barrier layer is formed. The wafer is transferred between the activation module 6000 and the modules 1000, 2000, 3000, 4000, 5000, and 6000 that apply an activating material that increases to the wafer via hole. Includes an intermodule transfer device 7000.

In addition, the semiconductor wafer manufacturing apparatus of the present invention may further include a loading and unloading module 8000 capable of loading or unloading the wafer.

The bubble removing module 1000, the cleaning module 9000, and the annealing module 5000 are disposed at one side with the inter-module transfer device 7000 interposed therebetween, and the insulation layer forming module 2000 is activated. The module 6000, the barrier layer forming module 3000, and the conductor layer forming module 4000 are disposed at the other side.

The intermodule transfer device 7000 may be implemented as a robot arm capable of linear movement and rotation in the passage 7001.

Hereinafter, referring to FIG. 7, a semiconductor wafer processing process using the semiconductor wafer manufacturing apparatus of the present invention will be described, and then a detailed configuration of each module of the semiconductor wafer manufacturing apparatus will be described.

The semiconductor wafer processing process in which the via holes are formed includes a first bubble removing step 100 for removing bubbles of via holes and filling deionized water, a step of forming and cleaning an insulating layer after bubble removal, and an insulating layer. A first annealing step (300) of applying heat to the formed wafer to heat treatment, an activation and cleaning step (400) of applying and cleaning an activation material so that the barrier layer adheres well, and forming a barrier layer on the surface on which the activation layer is formed. In step 500, the second bubble removing step 600 of removing bubbles and filling deionized water, forming a conductor layer 700, cleaning 800, and a conductor layer And a second annealing step 900 of applying heat to the formed wafer.

The first bubble removing step 100 and the second bubble removing step 600 are performed in the bubble removing module 1000, and the forming and cleaning of the insulating layer 200 is performed in the insulating layer forming module 2000. The first annealing step 300 and the second annealing step 900 are performed in the annealing module 5000, and the activation and cleaning step 400 are performed in the activation module 6000, and forming a barrier layer. 500 is performed by the barrier layer forming module 3000, and the step 700 of forming the conductor layer is performed by the conductor layer forming module 7000.

As described above, the semiconductor wafer manufacturing apparatus of the embodiment of the present invention can process all processes capable of processing a semiconductor wafer having via holes formed in one device. In addition, the first annealing step 300 and the second annealing step 900 may be processed by one annealing module 5000, and the first bubble removing step 100 and the second bubble removing step 600 are performed by one. Can be performed with the bubble removing module 1000, it can reduce the number of equipment for the process.

In addition, the insulating layer forming module 2000, the activation module 6000, and the barrier layer forming module 3000 have a built-in cleaning device (details are described in the description of the individual modules described later). It is possible to prevent the substance from being exposed to the outside. However, since the conductor layer forming module 4000 has a long process time, the cleaning module 9000 is formed as a separate module, thereby preventing the process time from being delayed.

FIG. 8 is a conceptual cross-sectional view of the bubble removing module of FIG. 6, and FIG. 9 is an enlarged cross-sectional view of part V of FIG. 8.

As shown in these figures, the semiconductor bubble removing module of an embodiment of the present invention, the wafer chuck 1100 for holding and fixing the back of the wafer 1, the chuck rotating unit 1200 for rotating the wafer chuck, A lift apparatus 1600 for elevating the wafer chuck 1100 up and down, a liquid injection apparatus 1700 for injecting a bubble removing liquid onto a surface of the wafer fixed to the wafer chuck 1100, and the wafer chuck A chamber sealing apparatus 1300 for sealing the chamber 1301 surrounding the wafer 1 fixed to the 1100, a chamber vacuum apparatus 1400 for forming a vacuum in the chamber 1301, and And a liquid recovery unit 1500 for recovering the bubble removing liquid scattered during the rotation of the wafer chuck 1100.

A wafer holding vacuum hole 1101 is formed on a surface of the wafer chuck 1100 that is in contact with the back surface of the wafer 1, and a chuck vacuum device 1110 for generating a vacuum in the wafer holding vacuum hole 1101. The apparatus may further include a vacuum device switching unit 1120 converting the wafer holding vacuum hole 1101 to be selectively connected to the chuck vacuum device 1110 and the chamber vacuum device 1400.

The wafer chuck 1100 is in direct contact with the back surface of the wafer 1, and supports the wafer support plate 1130 and the support plate 1130 on which the above-described wafer holding vacuum holes 1101 are formed, and is connected to the driving shaft 1201. And a chuck body 1140. The chuck body supports the support plate 1130, an inner support rib 1141 to prevent the bubble removing liquid from penetrating into the drive shaft, etc., and a chuck seal 1142 extending to protrude outside the wafer edge of the wafer chuck. And an outer rib 1143 protruding downward from an end of the chuck closure portion 1142. On the back side of the outer rib 1143, a liquid penetration preventing groove 1144 is formed to prevent the bubble removing liquid from penetrating to the back side.

The chuck vacuum device 1110 is a vacuum pump, and may be configured in any configuration as long as it can generate a vacuum in the wafer holding vacuum hole 1101, and a detailed description thereof will be omitted. The vacuum device switching unit 1120 may be configured as a switching valve. When the chamber vacuum apparatus 1400 is operated to become a vacuum in the chamber, when there is a difference between the pressure applied to the holding vacuum hole 1101, the holding of the wafer may not be stable, and thus, the chamber vacuum apparatus 1400 may be used. By connecting the holding vacuum hole 1101 to the vacuum device switching unit 1120, the wafer can be more stably positioned.

The chuck pivoting unit 1200 may be a motor or the like, and the chuck lifting device 1600 may be configured as an air cylinder, but may be implemented as a solenoid or the like.

The liquid injector 1700 may rotate, and inject a liquid for removing bubbles. Since many liquid injectors for injecting such a liquid in a desired amount are generally known, detailed descriptions thereof will be omitted. The bubble removing liquid may be DIW (deionized water) or the like as purified water.

The chamber sealing apparatus 1300 includes the chuck sealing unit 1142 described above, a sealing cap 1310 formed to be opened and closed at the chuck sealing unit 1142, and a chuck sealing unit 1142 of the sealing cap 1310. It includes a sealing cap elevating device 1320 for raising and lowering the sealing 1311 and the sealing cap 1310 which is installed on the contact surface.

In the sealing cap 1310, a gas injection port 1302 is connected to a gas injection device 1800 provided separately and to inject gas into the chamber 1301, and the vacuum is connected to the chamber vacuum device 1400. Suction holes 1303 are formed. In addition, the vacuum suction hole 1303 and the gas injection port 1302 further comprises a diffusion plate 1304 provided between the wafer. The diffusion plate 1304 allows the injected gas and the sucked air to spread evenly in the chamber, preventing the bubble removing liquid from being concentrated in one portion. Nitrogen (N2) or the like may be used as the gas injected into the gas injection port 1302.

Sealing cap lifting device 1320 may be implemented in a rack, a pinion, or can be implemented in various forms, such as a cylinder to raise and lower the closed cap 1310, a detailed description thereof will be omitted.

The liquid recovery part 1500 is formed in an annular tube shape in which a part of the inner circumference is opened in the circumferential direction, and is formed to surround the outer circumference of the wafer chuck 1100. Accordingly, the wafer chuck 1100 rotates to prevent the bubble removing liquid remaining on the wafer from scattering to the outside. A discharge port (not shown) through which liquid can be discharged is connected to the liquid recovery unit 1500.

Hereinafter, while describing the bubble removal method of the semiconductor wafer via hole of the present invention, the operation of the above-described bubble removal module will be described together.

10 is a flowchart illustrating a bubble removing method of a semiconductor wafer via hole according to an embodiment of the present invention.

As shown in FIG. 10, the bubble removing method of the semiconductor wafer via hole according to the exemplary embodiment of the present invention includes a liquid applying step (S1100) of applying a liquid for removing bubbles to the surface of the wafer 1 on which the via hole is formed, and the liquid is applied. Placing the wafer in the hermetically sealed chamber 1301 (S1200), applying a vacuum to the chamber 1301, and removing the bubbles remaining in the via hole (S1300), and the chamber 1301. And injecting gas into the chamber (S1400), and drying the wafer (1) by rotating the wafer (1) to remove the liquid for removing bubbles remaining on the wafer.

In the liquid coating step (S1100), first, the wafer 1 is placed on the upper surface of the wafer chuck 1100. At this time, in order to avoid interference with the liquid recovery unit 1500, the wafer 1 is positioned on the upper surface of the wafer chuck 1100 while the elevator apparatus 1500 moves the wafer chuck upward. At this time, the wafer is positioned on the wafer chuck 1100 using a robot.

The chuck vacuum device 1110 is then driven to secure the wafer to the wafer chuck 1100. Thus, the wafer is prevented from flowing.

The wafer chuck 1100 is then lowered using a lift device.

Then, the liquid injector 1700 rotates, injects the bubble removing liquid into the upper surface of the wafer 1, and then rotates it back to its original position. At this time, it is preferable to adjust the amount of liquid so that the liquid for removing bubbles is evenly spread on the surface of the wafer.

In the step S1200 of placing the wafer in the sealed chamber, the sealing cap lifting device 1320 is driven to lower the sealing cap 1310 to seal the chamber, thereby placing the wafer in the sealed chamber.

In the vacuum step (S1300), first, the vacuum device switching unit 1120 is used to connect the wafer holding vacuum hole 1101 and the chamber vacuum device 1400. Then, the chamber vacuum apparatus 1400 is driven to form the same vacuum pressure in the chamber 1301 and the wafer holding vacuum hole 1101. At this time, the applied vacuum pressure is about 1 torr, and the vacuum is maintained for a time enough to remove bubbles. As a result, all the bubbles in the via hole can be removed.

In the step S1400 of opening the chamber, if the chamber is forcibly opened in a vacuum state, not only a lot of power is required but also the wafer may be damaged by an impact applied during opening. Therefore, nitrogen gas is injected through the gas injection port 1302 to be in the same state as atmospheric pressure. In addition, by using the vacuum device switching unit 1120, the vacuum hole 1101 for the wafer holding causes the vacuum pressure to be generated by the vacuum device 1110 for the chuck. Next, the sealing cap lifting device 1320 is driven to lift the sealing cap 1310.

In the drying step (S1500), the chuck rotating unit 1200 is driven to rotate the wafer to remove the liquid remaining on the surface. However, the remaining liquid is not completely dried, and the liquid remains to the extent necessary for the next process. In this case, the liquid to be scattered is recovered through the liquid recovery unit 1500.

Then, after elevating the wafer chuck using the elevator 1500, the process is completed.

On the other hand, it may be subjected to a cleaning step after the drying step (S1500).

As described above, according to the bubble removing module of one embodiment of the present invention, not only can the bubble remaining in the via hole be stably removed, but also the bubble removal and drying can be solved by one equipment, which is effective.

It is also possible to prevent liquid splashing due to the liquid recovery portion from seeping into other parts of the equipment.

In addition, by providing the lifting device, the wafer can be loaded and unloaded without being interfered with the liquid recovery unit.

In addition, by providing the vacuum device switching unit, the pressure applied to the upper and lower sides of the wafer during bubble removal can be the same, and damage to the wafer can be prevented.

By providing the diffusion plate, it is possible to make the flow of gas even and to prevent the liquid for bubble removal from being biased to one side.

Since the configuration of the cleaning module 9000 is the same as the other configurations except for the chamber sealing apparatus 1300, the chamber vacuum apparatus 1400, and the vacuum apparatus switching unit 1120 of the bubble removing module 1000, a detailed description thereof will be omitted.

FIG. 11 is a conceptual cross-sectional view of the insulating layer forming module of FIG. 6, and FIG. 12 is a cross-sectional view of a lamp action center of FIG. 11. 13 is a plan view of the lamp of FIG.

As shown in these figures, the insulating layer forming module of the present invention includes a wafer chuck 2110 for holding and fixing the back surface of the wafer 2200 on which a via hole is formed, and a chuck pivot 2120 for rotating the wafer chuck 2110. , The annular chamber 2100 surrounding the wafer 2200 fixed to the wafer chuck 2110 and the upper side of the chamber 2100 so that the processing liquid 2210 can be more activated and plated on the wafer 2200 sufficiently quickly. It may include a lamp 2500 installed in.

The chamber 2100 may be installed to be moved up and down by the chamber elevating device 2102 above the wafer chuck 2110 with respect to the processing liquid processing unit 2170 which will be described later, and the chamber elevating device 2102 may be a rack, It may be implemented as a pinion or may be implemented in various forms such as a cylinder, and a detailed description thereof will be omitted.

The wafer chuck 2110 may be rotated by receiving a rotational force by integrally coupling the driving shaft 2122 of the chuck driver 2120 to the lower center. The chuck rotating unit 2120 may be a motor 2124, etc. At this time, the motor 2124 may be a servo motor to adjust the rotation speed.

The lamp 2500 may be installed parallel to the wafer 2200 and may be formed to correspond to the wafer 2200 so that light is evenly and uniformly radiated over the entire surface of the wafer 2200. The lamp 2500 may be coupled to the lower side of the lamp bracket 2510, which is supported by the chamber elevator 2102 and parallel to the wafer 2200, so that the lamp 2500 may be installed parallel to the wafer 2200. In addition, the lamp 2500 may be formed in a disc shape having the same diameter as that of the wafer 2200 with respect to the disc shaped wafer 2200.

In particular, the lamp 2500 may be divided into a plurality of lamp channels 2501 to 2505 corresponding to the wafer 2200 and forming one parallel surface.

The plurality of lamp channels 2501 to 2505 may be configured of the same lamp among various lamp types such as an LED and a halogen, or may be configured of different lamps.

The plurality of lamp channels 2501 to 2505 may be configured in various layouts for uniformity of illuminance of light. In particular, the lamp channels 2501 to 2505 may have a concentric structure corresponding to the wafer 2200. That is, among the plurality of lamp channels 2501 to 2505, the center lamp channel 2501 is formed in a disc shape, and the remaining lamp channels 2502 to 2505 are concentric with the center lamp channel 2501 and the inner lamps thereof. It may be formed in an annular shape surrounding the outer periphery of the channels (2501 ~ 2505).

In addition, the plurality of lamp channels 2501 to 2505 may be independently driven or classified into two or more electrical circuits so that each on / off and brightness of light may be adjusted for uniformity of illumination of light. Independent drive control.

In this way, even when the light intensity of the lamp is changed by using for a long time, by adjusting the light brightness of each lamp channel (2501 ~ 2505), it is possible to ensure the uniformity of light intensity.

Meanwhile, the present invention may further include a processing liquid recovery unit 2170 for recovering the processing liquid 2210 scattered during the rotation of the wafer chuck 2110.

The treatment liquid recovery part 2170 is formed in an annular tube shape in which a part of the inner circumference is opened in the circumferential direction, and is formed to surround the outer circumference of the wafer chuck 2110. Accordingly, the wafer chuck 110 rotates to prevent the processing liquid 2210 remaining on the wafer 2200 from scattering to the outside. The chamber 2100 is provided with a discharge port (not shown) to discharge the liquid to the processing liquid recovery unit 2170. In addition, the chamber 2100 may be lowered and inserted into the treatment liquid recovery unit 2170, and the chamber 2100 may be elevated above the treatment liquid recovery unit 2170.

In addition, according to the present invention, the nozzle 2300 is positioned on the wafer 2200 during supply and recovery of the processing liquid 2210, and the nozzle 2300 is moved to the chamber 2100 after the supply and recovery of the processing liquid 2210. The nozzle supporter 2310 and the nozzle 2300 may include an ejector 2400 that supplies and recovers the treatment liquid 2210 through the nozzle 2300.

The nozzle 2300 is provided with a treatment liquid 2210 to form a supply and recovery passage, or a connection tube 2320 for supply and recovery of the treatment liquid 2210 is fitted to an upper side of the nozzle 2300, or a connector ( 2320 may be formed to have an inner passage that is vertically penetrated so that it can be installed through the up and down. The connection pipe 2320 may be made of a rubber hose or the like to have good fluidity, and may be attached or detached by fitting to the nozzle 2300.

The nozzle support 2310 has a simple nozzle 2300 between a first point where the nozzle 2300 is positioned on the wafer 2200 and a second point where the nozzle 2300 is moved to the side of the chamber 2100 to wait. The nozzle 2300 may be configured to be rotated about an axis in an up and down direction so as to move through a short path and to prevent interference with a surrounding.

As a preferred example for this purpose, the nozzle support 2310 is installed in the base 2312 next to the chamber 2100 and the rotating rod installed in the base 2312 so as to be rotatable in the vertical direction to support the nozzle 2300 And may include 2314. The base 2312 is fixed to the frame of the wafer manufacturing apparatus. The rotary rod 2310 includes a vertical rod 2314a having a base 2312 rotatably coupled up and down so that the nozzle 2300 can be rotated between the first point and the second point, and the vertical rod ( A horizontal rod 2314b installed horizontally on the upper end of the 2314a and having the nozzle 2300 coupled to the free end thereof may be included. The rotating rod 2310 may be integrally coupled to the rotating shaft of the motor installed in the base 2312 to be rotated by the motor.

Ejector 2400 is preferably composed of a vacuum type ejector acting by compressed air that is introduced and discharged at high speed, particularly for stable supply and recovery of the treatment liquid 2210.

The ejector 2400 may be connected through the nozzle 2300 and the connection pipe 2320 to supply and recover the treatment liquid 2210 through the nozzle 2300. The ejector 2400 may be connected to the tank 2410 in which the treatment liquid 2300 to be supplied and recovered is stored, and the hose.

In particular, the ejector 2400 may be configured to pump the treatment liquid 2210 only at the time of supply and recovery of the treatment liquid 2210. Of course, the ejector 2400 may be configured to be driven only when the processing liquid 2210 is supplied, or may be configured to be driven both when the processing liquid 2210 is supplied and recovered. However, the supply of the treatment liquid 2210 may be more advantageously performed by a pressure feeding method using the pressurized gas supplied from the pressurized gas supply unit 2420. That is, the tank 2410 is connected to the pressurized gas supply unit 2420 through a hose or the like, so that when the pressurized gas is pressurized into the tank 2410, the processing liquid 2210 of the tank 2410 is pushed into the tank ( 2410 may be supplied and discharged. The pressurized gas may be selected according to the chemical characteristics of the treatment liquid 2210 so as not to react with the treatment liquid 2210 at all. For example, the pressurized gas may be nitrogen gas (N ₂ ) when the treatment liquid 2210 is a nickel alloy.

In addition, a valve for opening and closing is configured at a connection portion of the tank 2410 and the pressurized gas supply unit 2420, and a connection portion of the tank 2410 and the ejector 2400. That is, the valve connects the tank 2410 and the pressurized gas supply part 2420 when the processing liquid 2210 is supplied, blocks the tank 2410 and the ejector 2400, and recovers the processing liquid 2210. The 2410 and the ejector 2400 may be connected to each other and may be disconnected between the tank 2410 and the pressurized gas supply 2420.

On the other hand, the processing liquid 2210 is an insulating material for forming an insulating layer in the via hole of the wafer 2200, for example, and is a material which causes a more active reaction by irradiation of light. (A bit more details are needed.)

In addition, the processing liquid 2210 is a post processing liquid for cleaning the wafer 2200 after the processing by the main processing liquid 2210 as well as the main processing liquid 2210 for filling a conductor in the via hole of the wafer 2200. There may be a cleaning liquid as 2210. The main treatment liquid 2210 and the after treatment liquid 2210 may be supplied and recovered through a separate treatment liquid supply and recovery device according to chemical characteristics.

Hereinafter, a description will be given of an operation of the above-described insulating layer forming module while describing a manufacturing method for a processing process for filling an insulator in a via hole of the semiconductor wafer 2200 of the present invention.

14 is a flowchart showing the details of the insulating layer formation and cleaning step of the present invention.

As shown in FIG. 14, the insulating layer forming and cleaning step according to the present invention includes a via hole processing step of filling a main processing liquid 2210 for filling an insulator into a via hole of a wafer 2200, and then It may be made of a post-treatment step.

The via hole treatment process step can be accomplished as follows.

First, the wafer 2200 is loaded onto the wafer chuck 2110 while the chamber 2100 is elevated upward (S2010), and then the chamber 2100 is lowered to surround the wafer 2200 (S2020). The processing liquid 2210 for coating the insulating layer on the via hole of the wafer 2200 through the 2300 is supplied onto the wafer 2200 (S2030), and power is applied to the lamp 2500 to process the processing liquid 2210. Irradiate the light (S2040). Then, the treatment liquid 2210 may be evenly and uniformly activated over the entire surface of the wafer 2200 by the lamp 2500 to form an insulating layer in the via hole of the wafer 2200.

After the via hole treatment process of the wafer 2200 is finished, the driving of the lamp 2500 is stopped (S2050), and the process immediately proceeds to the post-processing step as follows.

First, the treatment liquid 2210 supplied to the chamber 2100 through the nozzle 2300 is discharged and recovered outside the chamber 2100 (S2060). When recovery of the processing liquid 2210 is completed, the chamber 2100 is raised and lowered. Next, the cleaning solution is uniformly applied onto the wafer 2200 through the nozzle 2300 (S2070). Then, the wafer is rotated so that the cleaning liquid can clean the wafer 2200 more cleanly by centrifugal force. At this time, the rotation speed of the wafer chuck 2110 is set at a low speed so that the cleaning of the wafer 2200 is sufficiently performed by the cleaning liquid.

After the cleaning of the wafer 2200 is completed, the nozzle 2300 is discharged and recovered by removing the cleaning liquid out of the chamber 2100 (S2080), and the wafer chuck 2110 is rotated at high speed (S2090). Then, the cleaning liquid remaining on the wafer 2200 is scattered and removed from the wafer 2200 by centrifugal force, and the wafer 2200 can be quickly dried by the rotational wind of the wafer 2200.

The cleaning liquid scattered from the wafer 2200 may be discharged out of the chamber 2100 through the processing liquid recovery unit 2170.

After the wafer 2200 is sufficiently dried, the rotation of the wafer 2200 is stopped (S2100).

As described above, after the post-treatment such as forming an insulating layer, cleaning, and drying is successively performed by a single device, the wafer 2200 is lifted and unloaded from the wafer chuck 2110 (S2110). ).

FIG. 15 is a conceptual cross-sectional view of the barrier layer forming module of FIG. 6, FIG. 16 is an enlarged cross-sectional view of a portion 'A' of FIG. 15, and FIG. 17 is a schematic diagram illustrating an example in which the vibrator of FIG. 15 is installed in the vibrator frame.

For reference, the activation module 6000 differs only in the type of the processing liquid used from the barrier layer forming module 3000, and since the configuration of the module is almost the same, a detailed description of the activation module 6000 will be omitted.

The barrier layer forming module 3000 of the present invention includes a wafer chuck 3110 for holding and fixing a back surface of a wafer 3200 having a via hole, a chuck pivot 3120 for rotating the wafer chuck 3110, and a wafer chuck 3110. Chamber 3100 enclosing the wafer 3200 fixed to the wafer), a vibrator 3130 for vibrating the processing liquid 3210 supplied on the wafer 3200 surrounded by the chamber 3100, and a wafer chuck 3110. ), And a heater for transferring heat to the treatment liquid 3210 supplied on the wafer 3200 surrounded by the chamber 3100. 3580).

The wafer chuck 3110 may be rotatably installed in the lower hole formed on the lower side of the chamber 3100 and may cover the lower hole of the chamber 3100. The wafer chuck 3110 may stably fix the wafer 3200 by a vacuum pressure or the like, and may be coupled to the driving shaft 3122 of the chuck pivot 3120 disposed below the wafer chuck 3110. The chuck rotating unit 3120 may be a motor 3124, etc. In this case, the motor 3124 may be a servo motor to adjust the rotation speed.

The vibrator 3130 may generate any vibration wave and transmit the vibration wave to the processing liquid 3210, but may be more advantageous for activating the processing liquid 3210 to fill the barrier layer in the via hole of the wafer 3200. In order to prevent the 3200 from being damaged by indirect shock due to the vibration of the processing liquid 3210, a piezoelectric element or the like that generates ultrasonic waves by a piezoelectric effect may be preferable. The piezoelectric element array of the vibrator may be designed in consideration of such a point so that vibration may occur uniformly and evenly in response to the shape of the wafer 3200 (eg, the disc shaped wafer 3200).

In particular, the vibrator 3130 may be installed to be in contact with the water surface of the processing liquid 3210 so as to indirectly impact the wafer 3200 due to vibrations with the processing liquid 3210 interposed therebetween. However, the vibrator 3130 may be installed in the vibrator frame 3140 installed to be able to move up and down on the upper side of the chamber 3100 so as not to interfere with loading / unloading of the wafer 3200. It may be desirable. That is, the vibrator 3130 may be located below the vibrator frame 3140 and may be coupled to the vibrator frame 3140 so that the vibrator may be vertically lifted up and down with the vibrator frame 3140. The elevating device 3150 for raising and lowering the vibrator frame 3140 may be implemented as a rack, a pinion, or as an elevator in various forms such as a cylinder.

In addition, the vibrator 3130 corresponds to the circular wafer 3200 to further improve the vibration effect for activating the processing liquid 3210 and to uniformly and evenly transmit the vibration wave to the processing liquid 3210. Concentric with and formed in a radial bar shape in the radial direction of the wafer 3200 may be installed so as to be rotatable. That is, the rotating shaft 3132 of the vibrator 3130 may be coupled to the vibrator frame 3140 so as to be rotatable in the vertical direction.

Configuration 3160 for rotating the vibrator 3130 may be composed of a motor coupled to the rotating shaft 3132 of the vibrator 3130, the motor for rotating the vibrator 3130 while rotating the vibrator 3130 vibrator 3130 It can be implemented by a servo motor method to adjust the rotational speed of the.

18 is a plan view illustrating an internal configuration of the vibrator of FIG. 17.

As shown in FIG. 18, a plurality of vibration elements 3131 are disposed inside the vibrator 3130, and the vibration elements 3131 are asymmetrically disposed with respect to the center C of the vibrator 3130. . The vibrating element 3131 may be vibrated individually, and as described above, a piezoelectric element or the like may be used. By asymmetrically disposing, when the vibrator rotates, as shown in FIG. 16, the vibrating element 3131 may evenly pass through the entire region of the wafer, thereby vibrating evenly.

In addition, the vibrating element 3131 is disposed more closely at a distant place than a position near the center C of the vibrator. By doing in this way, the vibration density (vibration amount per time) applied to the whole area | region of a wafer can be made uniform.

20 and 21 illustrate a modified example of the vibrator of FIG. 17, and FIG. 20 is implemented in a cross shape, and FIG. 21 is formed in a shape in which three branches are extended. As such, the vibrator may be formed in various shapes.

The present invention may further include a processing liquid recovery part 3170 for recovering the processing liquid 3210 scattered during the rotation of the wafer chuck 3110. The processing liquid recovery part 3170 is formed in an annular tube shape in which a part of the inner circumference is opened in the circumferential direction, and is formed to surround the outer circumference of the wafer chuck 3110. In addition, the processing liquid recovery part 3170 thus prevents the wafer chuck 3110 from rotating and scattering of the processing liquid 3210 remaining on the wafer 3200 to the outside. The chamber 3100 is provided with a discharge port (not shown) to discharge the liquid to the treatment liquid recovery unit 3170.

The processing liquid recovery part 3170 has an upper side covered by the wafer chuck 3110 and a lower side covered by the open part 3175, so that the heater 3180 together with the covered part 3175 and the wafer chuck 3110. It can form an internal space that is built. The cover 3175 may be formed as a plate, as shown, and may be variously formed, such as a cap structure and a dome structure, as necessary.

The heater 3180 transfers heat to the processing liquid 3210 through the wafer chuck 3110, and the processing liquid recovery unit 3170, the cover 3175, and the wafer chuck to minimize heat loss due to heat dissipation. It may be installed in the inner space formed by (3110).

The heater 3180 may be formed in a disc shape corresponding to the wafer 3200 to uniformly and uniformly transfer heat. The heater 3180 is formed in a disk shape by a plurality of heater members 3181, 3182 and 3183 having a concentric circle structure formed in a disk or an annular shape, respectively, for uniform temperature distribution, and each heater member 3181, 3182 and 3183. Temperature) may be independently controlled by a heater controller that controls the heater temperature. In addition, each heater member 3181, 3182, 3183 may be divided equally or differentially along the radial direction of the circle. Each of the heater members 3181, 3182, and 3183 may be formed of the same material or may be formed of different materials.

The treatment liquid 3210 may be determined according to which of the processes for filling the barrier layer or the activation layer in the via hole of the wafer 3200, for example, after forming an insulating layer in the via hole of the wafer 3200, As an intermediate step prior to forming the conductor layer by plating or the like, the nickel alloy may be used as a main chemical element or a chemical element capable of acting as an adhesive.

In addition, the processing liquid 3210 may include a main processing liquid 3210 for filling conductors in the via holes of the wafer 3200, as well as a cleaning liquid as a post processing liquid for cleaning the wafer 3200 after the processing by the main processing liquid. There may be. The main treatment liquid 3210 and the post treatment liquid may be supplied and recovered through a separate treatment liquid supply recovery device according to chemical characteristics.

Hereinafter, while describing the manufacturing method for the treatment process for filling the conductors in the via holes of the semiconductor wafer 3200 of the present invention, the operation of the above-described manufacturing apparatus will be described together.

FIG. 23 is a flowchart illustrating detailed steps of the barrier layer forming step of FIG. 7.

As shown in FIG. 23, the barrier layer forming step is one of a plurality of processes for filling a conductor in a via hole of a wafer 3200, followed by a via hole processing step for filling a main processing liquid 3210, and then It may be made of a post-treatment step.

The via hole treatment process step can be accomplished as follows.

First, in a state in which the vibrator frame 3140 is elevated above the chamber 3100, the wafer 3200 is loaded onto the wafer chuck 3110 (S3010), and the chamber 3140 is lowered (S3020). Next, the main processing liquid 3210 is supplied into the chamber 3100 through a nozzle or the like (S3030). At this time, the main treatment liquid 3210 is supplied at a predetermined temperature for activation, and at least the water level is supplied at a predetermined level so that the water surface touches the vibrator 3130.

Next, the vibrator frame 3140 is lowered so that the vibrator 3130 maintains a predetermined distance from the wafer 3200 on the wafer chuck 3110 (S3040).

After the main processing liquid 3210 is filled in the chamber 3100, the vibrator 3130 is driven to generate ultrasonic waves, and the vibrator 3130 is rotated (S3050). Then, the main processing liquid 3210 is more activated by the vibrator 3130, so that the processing liquid 3210 can be easily filled in the via hole of the wafer 3200 without gaps, and the vibration of the processing liquid 3210 can be achieved. By removing the air bubbles existing in the via hole of the wafer 3200 due to the indirect impact, the wafer 3200 may be processed uniformly and evenly without defects as a whole. In addition, in order to maintain the temperature at the time of supply of the processing liquid 3210 in order to prevent the activation of the processing liquid 3210, the heater 3180 is operated to heat the heater 3180 through the wafer chuck 3110. 3210).

On the other hand, the supply of the main processing liquid 3210 is made before the vibrator frame 3140 falls, or after the vibrator frame 3140 falls, through the vibrator frame 3140 or between the vibrator frame 3140 and the chamber 3100. It can also be done through.

After the processing of the wafer 3200 is finished, the driving and rotation of the vibrator 3130 is stopped, the heater 3180 is stopped (S3060), the vibrator frame 3140 is raised (S3070), and immediately after Proceed to processing.

First, the main processing liquid 3210 supplied to the chamber 3100 through a nozzle or the like is discharged and recovered outside the chamber 3100 (S3080). At this time, the recovery of the main processing liquid 3210 is preferably performed after the vibrator frame 3140 is raised and lowered as described above, but may also be made in a state where the vibrator frame 3140 is lowered.

After the recovery of the main processing liquid 3210, the chamber 3100 is raised. (S3090)

Next, the wafer chuck 3110 is rotated or a cleaning liquid is applied onto the wafer 3200 in a stationary state (S3100). Then, the cleaning liquid may be uniformly and evenly applied on the wafer 3200 by the rotation of the wafer 3200, and the cleaning liquid may clean the wafer 3200 more cleanly by centrifugal force. At this time, the rotation speed of the wafer chuck 3110 is set at a low speed so that the cleaning of the wafer 3200 is sufficiently performed by the cleaning liquid.

After the cleaning of the wafer 3200 is finished, the cleaning liquid is discharged and recovered outside the chamber 3100 through a nozzle or the like (S3110), and the wafer chuck 3110 is rotated at high speed (S3120). Then, the cleaning liquid remaining on the wafer 3200 is scattered and removed from the wafer 3200 by centrifugal force, and the wafer 3200 can be quickly dried by the rotational wind of the wafer 3200.

The cleaning liquid scattered from the wafer 3200 may be discharged out of the chamber 3100 through the liquid recovery part.

After the wafer 3200 is sufficiently dried, the rotation of the wafer 3200 is stopped (S3130).

As described above, the wafer 3200 is unloaded from the wafer chuck 3110 after the via hole treatment process and the post-treatment such as cleaning and drying are continuously performed by one device (S3110).

24 is a conceptual cross-sectional view (cap lifted state) of the conductor layer forming module of FIG. 6, FIG. 25 is a view of the cap lowered state of FIG. 24, FIG. 26 is an enlarged view of a portion of FIG. 25, and FIG. 27 is AA of FIG. 26. 28 is a cross-sectional view along a line, and FIG. 28 is a perspective view of the second electrode and the cap of FIG. 24.

As shown in these figures, the conductor layer forming module of the present invention includes a wafer chuck 4200 for holding the back surface of the wafer 4100 on which a via hole is formed, and a chuck pivot 4210 for rotating the wafer chuck 4200. The cap 4300 surrounding the wafer 4100 fixed to the wafer chuck 4200 and the supplied processing liquid 4110 can be activated by electromagnetic interaction to be plated on the wafer 4100. The first electrode and the second electrode 4400 which are installed to face up and down between each other are included.

The wafer chuck 4200 may be rotated by receiving a rotational force by integrally combining the driving shaft 4212 of the chuck pivot 4210 at a lower center. The chuck rotating unit 4210 may be a motor 4214, and the servo motor may be applied to adjust the rotational speed of the motor. Meanwhile, the wafer chuck 4200 may be lifted up and down by the chuck lifting device 4217. The chuck elevating device may be implemented in various ways such as a pneumatic cylinder, a solenoid, and a detailed description thereof will be omitted.

The cap 4300 may be installed on the wafer chuck 4200 so that the wafer 4100 can be loaded and unloaded on the wafer chuck 4200 so that the cap 4300 can be moved up and down on the wafer chuck 4200. The cap lifting device 4350 may be implemented as a rack, pinion, or may be implemented in various forms such as a cylinder, and a detailed description thereof will be omitted.

The cap 4300 is formed in a dome structure as a whole, and is formed such that the processing liquid 4110 supplied on the wafer 4100 is stored and the stored processing liquid 4110 is overflowed and discharged. A lower cap 4310 and an upper cap 4320 provided above the lower cap 4310 may be included.

The lower cap 4310 surrounds the outer circumference of the wafer 4100 secured to the wafer chuck 4200 and surrounds the reservoir 4310a in which the treatment liquid 4110 is stored, and surrounds the outer circumference of the reservoir 4310a. A drainage portion 4310b for discharging the processing liquid 4110 overflowed from 4310a may be included. That is, the lower cap 4310 forms the reservoir 4310a and surrounds the outer circumference of the inner chamber 4312 and the inner chamber 4312 formed so that the processing liquid 4110 can overflow, and the inner chamber 4312 is formed. A drainage portion 4310b, which is a recovery space for collecting the overflowed processing liquid 4110, is formed between the gaps and the discharge chamber 4314a is formed on one side of the drainage portion.

The inner chamber 4312 is inside the upper portion (that is, a position higher than the upper and lower middle positions of the inner chamber 4312) so that the processing liquid 4110 can overflow from the reservoir portion 4310a to the drain portion 4310b. A recovery hole 4312a may be formed through the chamber 4312 and connected to the recovery space of the outer chamber 4314. The recovery hole 4312a has an inner chamber 4312 side size of the outer chamber 4314 gradually or stepwise along its through direction so that the processing liquid 4110 can easily overflow without flow resistance. It can be made larger. In addition, the inner chamber 4312 may be formed in an annular shape having a lower height than the outer chamber 4314 so that the excessively supplied treatment liquid 4110 may smoothly overflow from the reservoir 4310a to the drainage portion 4310b. have. At this time, the upper end 4312b of the inner chamber 4312 may have the overflow treatment liquid 4110 more easily riding the upper end 4312b of the inner chamber 4312 from the reservoir 4310a to the drainage portion 4310b. It is pointed toward the upper side so as to ride over, the inner surface may be formed vertically up and down and the outer surface is inclined. In addition, the upper end 4312b of the inner chamber 4312 is not limited to the portion indented along the circumferential direction of the inner chamber 4312. It may be formed in a sawtooth shape in which the irregularities are repeated along the direction (that is, the circumferential direction of the circle). In addition, the inner chamber 4312 may have a drain hole 4312c connected to a recovery space of the outer chamber 4314 at a lower side of the lower position than the recovery hole 4312a, preferably close to the lower end of the inner chamber 4312. In this case, even after the processing process of the wafer 4100 is finished, even if the processing liquid 4110 of the reservoir 4310a is lowered to a low water level, the drainage 4310c can easily be used as the drainage portion 4310b. Can be discharged. The drain hole 4312c of the inner chamber 4312 is downward from the inner chamber 4312 to the outer chamber 4314 so that the processing liquid 4110 can be easily guided from the reservoir 4310a to the drainage portion 4310b. It may be formed to be inclined. The outer chamber 4314 may be formed in a dome shape having an inner space with a lower surface opened.

In addition, the lower cap 4310 may further include an annular skirt 4316 so that the supplied processing liquid 4110 may be discharged after being sufficiently stagnated in the inner chamber 4312. The skirt 4316 is configured inside the inner chamber 4312 so as to be surrounded by the inner chamber 4312, so that a space through which the processing liquid 4110 can overflow is secured between the inner chamber 4312. It may be configured to be a predetermined distance from the inner chamber 4312 along the radial direction of the circle. In addition, the skirt 4316 is positioned above the lower end of the inner chamber 4312 so that the processing liquid 4110 can overflow to the outer chamber 4314 and the upper end of the skirt 4316 is higher than the upper end of the inner chamber 4312. It can be installed to be positioned high. The top of the skirt 4316 may be connected to the outer chamber 4314 so that the skirt 4316 may be supported by the outer chamber 4314.

On the other hand, the cap 4300 may be provided with a nozzle 4360 for guiding the processing liquid 4110 for supply and recovery of the processing liquid 4110. The nozzle 4360 may be installed to be elevated by a nozzle lifting device installed in the upper cap 4300, and the nozzle 4360 lifting device may be implemented in various forms such as a rack, a pinion, or a cylinder. Detailed description thereof will be omitted. The nozzle 4360 may be connected with a vacuum ejector, in particular for the recovery of the supplied processing liquid 4110.

The first electrode is installed to apply electricity to the wafer, as in the embodiment of the present invention, is installed on the wafer chuck 4200 and may be formed in a disc shape corresponding to the shape of the wafer 4100, the cathode of the anode and cathode Can be made.

The second electrode 4400 may be formed of an opposite electrode, that is, an anode, with the first electrode. The second electrode 4400 is configured on the upper side of the wafer chuck 4200 so as to face the first electrode up and down, and may be installed in the outer chamber 4314 so as to be supported by the cap 4300.

In particular, the second electrode 4400 may be installed to be surrounded by the annular skirt 4316 to correspond to the wafer 4100.

In addition, the second electrode 4400 may be installed to be rotatable about the vertical direction in the cap 4300 to stir the processing liquid 4110 supplied on the wafer 4100. That is, a second electrode motor 4410 for rotating the second electrode 4400 is installed inside the cap 4300, particularly the upper cap 4300, and the second electrode 4400 is a second electrode motor. It may be coupled to rotate integrally with the rotation shaft 4412 of 4410. In addition, the second electrode 4400 may be installed to be elevated by an electrode elevating device 4420 installed inside the upper cap 4300, and the electrode elevating device 4420 may be implemented as a rack, pinion, or a cylinder. It may be implemented in various forms and a detailed description thereof will be omitted.

In addition, the second electrode 4400 may include a plurality of second electrode wing members 4402 disposed along a rotational circumferential direction to easily stir the processing liquid 4110. The plurality of second electrode wing members 4402 may be evenly disposed so that the stirring of the treatment liquid 4110 and the interaction between the first electrode and the second electrode 4400 may be made evenly and evenly. Each second electrode wing member 4402 may be formed as a flat plate so as to be parallel to the first electrode for interaction with the first electrode. In addition, each of the second electrode wing members 4402 has a second electrode in order to equalize the rotation center side and the rotation outer circumferential side rotation rate such that the interaction between the first electrode and the second electrode 4400 is uniform along the rotation radius direction. It may be extended in a direction away from the center of rotation of the 4400, preferably may be formed in a fan shape.

In addition, the present invention recovers the processing liquid 4110 remaining and scattered on the wafer 4100 when the wafer chuck 4200 rotates, and recovers the processing liquid 4110 discharged to the discharge port 4314a of the cap 4300. In order to do so, it may further include a processing liquid recovery part 4250 having a tubular structure formed to surround the outer circumference of the wafer chuck 4200 and formed so that the cap 4300 may be inserted therein.

On the other hand, the processing liquid 4110 is a process for filling a conductor in the via hole of the wafer 4100, for example, a chemical element for forming the conductor layer by copper plating after forming an insulating layer or the like in the via hole of the wafer 4100. It may be made of. In addition, the processing liquid 4110 may be a main processing liquid 4110 for filling conductors in the via holes of the wafer 4100, as well as a post processing liquid for cleaning the wafer 4100 after the processing by the main processing liquid 4110. There may be a cleaning liquid as 4110.

Hereinafter, a manufacturing method for a processing process for filling a conductor in a via hole of the semiconductor wafer 4100 of the present invention will be described with reference to FIG. 29, and the operation of the conductor layer forming module described above with reference to FIGS. 24 to 28 will be described. Describe together.

The step 700 of forming a conductor layer according to the present invention is one of a plurality of processes for filling a conductor into a via hole of a wafer 4100, and a via hole processing step of filling a main processing liquid 4110, and then It may be made of a post-treatment step.

The via hole treatment process step can be accomplished as follows.

First, the wafer 4100 is loaded onto the wafer chuck 4200 while the cap 4300 is lifted up (S4010), and then the cap 4300 is lowered to surround the wafer 4100. (S4020)

Then, the processing liquid 4110 for plating the conductor layer in the via hole of the wafer 4100 is supplied onto the wafer 4100 surrounded by the cap 4300 (S4030). At this time, in the initial stage of supply of the processing liquid 4110, the processing liquid 4110 is filled to the reservoir 4310a up to a predetermined level, and then overflowed through the outer chamber 4314. Therefore, since the treatment liquid 4110 may be sufficiently rested in the reservoir 4310a of the cap 4300, the conductive layer may be stably formed in the lower hole of the wafer 4100.

In addition, the first electrode and the second electrode 4400 are respectively connected to a power source to drive the second electrode 4400 and rotate (S4040). Then, the conductor layer may be evenly and uniformly plated and formed over the entire surface of the wafer 4100 by the interaction between the first electrode and the second electrode 4400 and the stirring of the treatment liquid 4110.

When the via hole processing process of the wafer 4100 is finished, the power supply of the first electrode and the second electrode 4400 is stopped, and the rotation of the second electrode 4400 is stopped (S4050) and supplied through the nozzle 4360. The collected processing liquid 4110 is recovered (S4060) and the cap 4300 is elevated (S4070), and then proceeds directly to the post-treatment step as follows.

First, the cleaning liquid is applied onto the wafer 4100 while rotating the wafer chuck 4200 (S4080). Then, the cleaning liquid may be uniformly and evenly applied on the wafer 4100 by the rotation of the wafer 4100, and the cleaning liquid may clean the wafer 4100 more cleanly by centrifugal force. At this time, the rotation speed of the wafer chuck 4200 is set at a low speed so that the cleaning of the wafer 4100 can be sufficiently performed by the cleaning liquid.

Next, the supply of the cleaning liquid is stopped and the wafer chuck 4200 is rotated at high speed (S4090). Then, the cleaning liquid remaining on the wafer 4100 is scattered and removed from the wafer 4100 by centrifugal force, and the wafer 4100 can be quickly dried by the rotational wind of the wafer 4100.

The cleaning liquid scattered from the wafer 4100 may be recovered by the processing liquid recovery unit 4250 and then discharged.

After the wafer 4100 is sufficiently dried, the rotation of the wafer 4100 is stopped (S4100).

As described above, the wafer 4100 is unloaded from the wafer chuck 4200 after the via hole treatment process and the post-treatment such as cleaning and drying are continuously performed by one device (S4110).

30 to 35 are conceptual plan views according to the process sequence of the annealing module of FIG. 6, and FIGS. 36 to 38 are conceptual side views according to the process sequence of the annealing module of FIG. 6.

As shown in these drawings, the annealing apparatus of the semiconductor wafer 10 in one embodiment of the present invention is installed to support and fix the chamber 5100 and the back surface of the wafer 5010 on one side inside the chamber 5100. A first wafer chuck 5110 on which the wafer 5010 is loaded and unloaded, a second wafer chuck 5120 installed on the other side of the chamber 5100 to support and secure the back surface of the wafer 5010, and a first wafer chuck 5120. A transfer 5130 for transferring the wafer 5010 between the wafer chuck 5110 and the second wafer chuck 5120 and a second wafer 5010 to cool the wafer 5010 fixed to the first wafer chuck 5110. A cooler 5190 installed in the wafer chuck 5120; And a heater 5140 installed on the second wafer chuck 5120 to heat the wafer 5010 fixed to the second wafer chuck 5120.

The chamber 5100 is formed to have an internal space in which the annealing process is performed. In particular, the chamber 5100 may be made to be stable in a state where the annealing process is blocked from the outside.

The first wafer chuck 5110 and the first wafer chuck 5110 are formed inside the chamber 5100 so that the low temperature atmosphere of the first wafer chuck 5110 and the high temperature atmosphere of the heater 5140 of the second wafer chuck 5120 may be blocked. A protruding wall 5102 protrudes higher than the first and second wafer chucks 5120 from the bottom of the chamber 5100 may be provided between the two wafer chucks 5120. The protruding wall 5102 may be formed of a material having low thermal conductivity to prevent thermal conduction by the protruding wall 5102. The protruding wall 5102 may be configured in a plurality to thermally cut off between the first wafer chuck 5110 and the second wafer chuck 5120.

The first wafer chuck 5110 may include a base 5112 on which the back surface of the wafer 5010 abuts. The base 5112 of the first wafer chuck 5110 may be installed to protrude a predetermined height from the bottom of the chamber 5100 to stably support the wafer 5010, and may be formed to correspond to the wafer 5010. That is, the base 5112 of the first wafer chuck 5110 may have a cylindrical shape corresponding to the circular wafer 5010. In addition, the first wafer chuck 5110 may further include a plate 5114 installed at the bottom of the chamber 5100 to support the base 5112 of the first wafer chuck 5110. The plate 5114 of the first wafer chuck 5110 may be made of a disc of larger diameter than the base 5112 of the first wafer chuck 5110.

The second wafer chuck 5120 may also be formed of the base 5122 and the plate 5124 in the same manner as the first wafer chuck 5110. The base 5122 of the second wafer chuck 5120 may be formed of a material having a good thermal conductivity to facilitate heat transfer by the heater 5140.

On the other hand, on the base 5112 of the first wafer chuck 5110, a plurality of pins 5150 is configured to support the back surface of the wafer 510 in the loading and unloading step of the wafer 5010 chuck. The 5150 may be installed to be elevated by a pin lifter along a pin hole 5112a formed in the vertical direction of the base 5112 of the first wafer chuck 5110. The pin hoisting device may be implemented with a solenoid, a cylinder, or the like.

The transfer 5130 may include a main body portion 5152 surrounding the outer circumference of the wafer 5010, and a plurality of support portions 5134 protruding from the main body portion 5152 to support the back surface of the wafer 5010. . In particular, the transfer part 5130 may have a main body portion 5122 such that the back surface of the wafer 5010 may contact the base 5112 of the first wafer chuck 5110 and the top surface of the base 5122 of the second wafer chuck 5120. The base 5112 of the first wafer chuck 5110 and the base 5122 of the base 5122 of the second wafer chuck 5120 may be formed in an arc shape, and the plurality of supporting parts 5134 may include a first wafer chuck ( It may be formed to be inserted into the groove 5112b formed in the outer peripheral end of the upper surface of the base 5112 of the 5110 and the base 5122 of the second wafer chuck 5120. The plurality of support portions 5134 may be formed in a lower portion of the main body portion 5122 and may be formed of a thinner plate than the main body portion 5122 so that the wafer 5010 may be sandwiched between the main body portions 5152.

In addition, the transfer 5130 is rotated between the first wafer chuck 5110 and the second wafer chuck 5120 by a transfer rotating device so as to transfer the wafer 5010 to the chamber 5100 in the vertical direction in the axis. It may be installed to further include a rotating part (5136) connected to the main body portion (5132). The transfer rotating device may be implemented by a motor, a cylinder, or the like connected to the rotating unit 5136 of the transfer 5130 to rotate.

In addition, the transfer 5130 may further include a transfer elevating device for elevating the transfer 5130 to transfer the wafer 5010 through the upper side of the protrusion wall (5102) of the chamber (5100). The transfer elevating device may be implemented with a solenoid, a cylinder, a motor, or the like.

Meanwhile, the present invention may further include a chamber 5100 cooling device for cooling the chamber 5100. The cooling device of the chamber 5100 may be any device as long as it can realize the cooling of the chamber 5100. For example, the cooling device line 5160 is installed to surround the inner space of the chamber 5100 in the wall of the chamber 5100. And a pump connected to the coolant line 5160 to circulate the coolant along the coolant line 5160, and a detailed description thereof will be omitted.

In addition, the present invention may further include a chamber dust mill for forming a vacuum in the chamber 5100 for a stable annealing process. For example, the chamber vacuum factory may be formed of a vacuum pump connected to the port 5100a formed at one side of the chamber 5100, and may operate from a high vacuum to a low vacuum to be variably operated according to a process.

The heater 5140 may be installed inside or below the base 5122 of the second wafer chuck 5120, and may include a heating wire.

The cooler 5190 may be installed inside or below the base of the first wafer chuck 5110, and may be air-cooled or water cooled.

Hereinafter, an annealing process by the annealing module of the present invention will be described.

First, the loading step of the wafer 5010 is performed. That is, as shown in FIG. 30, a plurality of pins 5150 protrude from the base 5112 of the first wafer chuck 5110 and the transfer 5130 is lowered to the first wafer chuck 5110. The wafer 5010 is transferred into the chamber 5100 by an inter-module transfer device 7000 formed as shown in FIGS. 31 and 36, and a plurality of pins 5150 on the first wafer chuck 5110 as shown in FIGS. 31 and 36. Raised on Subsequently, as shown in FIG. 37, when the plurality of pins 5150 are lowered by the pin lifter, the back surface of the wafer 5010 contacts the upper surface of the base 5112 of the first wafer chuck 5110.

After the wafer 5010 is loaded on the first wafer chuck 5110, the wafer 5010 is sufficiently stabilized by the low temperature atmosphere at the first wafer 5010, and then the plurality of supporting portions 5134 of the transfer 5130 are illustrated in FIG. 38. The transfer 5130 is lifted higher than the protruding wall 5102 by the transfer elevating device with the wafer 5010 raised thereon, and as shown in FIG. 32 after the transfer 5130 is lifted by the transfer rotating device. The transfer 5130 rotates from the first wafer chuck 5110 to the second wafer chuck 5120 and then descends toward the second wafer chuck 5120 by a transfer elevating device, as shown in FIG. 33. 5010 is mounted on the base 5122 of the second wafer chuck 5120. As such, the wafer 5010 is not immediately loaded onto the second wafer chuck 5120, and the wafer 5010 is stabilized while waiting in the first wafer chuck 5110, and then the second wafer chuck 5120 is removed from the first wafer chuck 5110. ) Can be transferred. Therefore, as the wafer 5010 is transferred to the second wafer chuck 5120 in a stable atmosphere in the chamber 5100, non-uniform temperature change in the transfer step of the wafer 5010 can be prevented, so that the second wafer chuck The wafer 5010 mounted on the 5120 may be uniformly and evenly annealed by the heater 5140. At this time, the chamber 5100 may be maintained in a vacuum state by the chamber vacuum apparatus.

After the annealing process, the transfer 5130 is elevated to the second wafer chuck 5120 while lifting the wafer 5010 from the second wafer chuck 5120, and then, as shown in FIG. 34, the first wafer chuck 5210. ), And descend toward the first wafer chuck 5110. Then, the wafer 5010 is again placed on the first wafer chuck 5110 to be cooled in a low temperature atmosphere at the first wafer chuck 5110 side, and then the first wafer chuck ( After being elevated above 5110, it is unloaded from chamber 5100 by a robot as shown in FIG. 35. Thus, after the annealing step, the wafer 5010 can be unloaded after it has sufficiently stabilized.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention.

1: wafer 1100: (bubble removing module) wafer chuck
1200: (bubble removing module) Chuck rotating part 1700: (bubble removing module) liquid injection device
1301: (bubble removing module) chamber 1300: (bubble removing module) chamber sealing device
1400: (bubble removing module) chamber vacuum device 1302: (bubble removing module) gas inlet
1500: (bubble removing module) liquid recovery unit 1600: (bubble removing module) lifting device
1101: (bubble removal module) for holding wafer
1110: (bubble removal module) chuck vacuum device
1120: (bubble removing module) vacuum device switching unit
1142: (bubble removal module) Chuck seal
1310: (bubble removing module) airtight cap 1304: (bubble removing module) diffusion plate
2100: (insulating layer forming module) chamber 2110: (insulating layer forming module) wafer chuck
2120: (insulation layer forming module) chuck drive unit
2170: (insulation layer forming module) treatment liquid recovery part
2300: (insulation layer forming module) nozzle
2310: (insulation layer forming module) nozzle support
2400: (insulation layer forming module) ejector
2410: (insulation layer forming module) tank
2420: (insulation layer forming module) pressurized gas supply unit
2500: (insulation layer forming module) lamp
3100; Barrier Layer Forming Chamber
3110; (Barrier Layer Forming Module) Wafer Chuck
3120; Barrier Layer Forming Module
3130; (Barrier layer forming module)
3140; (Barrier Layer Forming Module) Oscillator Frame
3150; (Barrier layer forming module) lifting device
3170; (Barrier layer forming module) Treatment liquid recovery part
3200; (Barrier Layer Forming Module) Wafer
3180: (barrier layer forming module) heater
4100; (Conductor Layer Forming Module) Wafer
4110; (Conductor Layer Forming Module)
4200; (Conductor Layer Forming Module) Wafer Chuck
4210; (Conductor Layer Forming Module) Chuck Rotating Part
4250; (Conductor layer forming module) Treatment liquid recovery part
4300; (Conductor Layer Forming Module) Cap
4310; (Conductor Layer Forming Module) Lower Cap
4312; (Conductor Layer Forming Module) Inner Chamber
4314; (Conductor Layer Forming Module) Outer Chamber
4320; (Conductor Layer Forming Module) Upper Cap
4400; (Conductor Layer Forming Module) Second Electrode
5100; (Annealing Module) Chamber
5110; (Annealing Module) First Wafer Chuck
5120; (Annealing Module) Second Wafer Chuck
5130; (Annealing module)
5140; Annealing Module Heater
5150; (Annealing module) pin
5160; (Annealing module) cooling water line

Claims (30)

In the semiconductor wafer manufacturing apparatus for filling an insulating layer, a barrier layer and a conductor layer in a semiconductor having a via hole,
A bubble removing module for removing bubbles in the via hole;
An insulation layer forming module forming the insulation layer in the wafer via hole from which bubbles are removed;
A barrier layer forming module for forming the barrier layer in the wafer via hole in which the insulating layer is formed;
A conductor layer forming module for forming the conductor layer in the wafer via hole in which the barrier layer is formed; And
An inter-module transfer device for transferring the wafer between the bubble removing module, the insulating layer forming module, the barrier layer forming module and the conductor layer forming module;
Semiconductor wafer manufacturing apparatus comprising a.
The method of claim 1,
A cleaning module for cleaning the wafer on which the conductor layer is formed;
Semiconductor wafer manufacturing apparatus characterized in that it further comprises.
The method of claim 1,
An annealing module capable of performing heat treatment on the wafer;
Semiconductor wafer manufacturing apparatus characterized in that it further comprises.
The method of claim 1,
An activation module for applying an activation material to the wafer via hole to increase adhesion to the insulating layer before the barrier layer is formed;
Semiconductor wafer manufacturing apparatus characterized in that it further comprises.
The method of claim 1,
And the bubble removing module, the insulating layer forming module, the barrier layer forming module, and the conductor layer forming module are bisected and arranged with the inter-module transfer device therebetween.
The method of claim 5, wherein
A cleaning module for cleaning the wafer on which the barrier layer is formed;
An annealing module capable of performing heat treatment on the wafer; And
An activation module for applying an activation material to the wafer via hole to increase adhesion to the insulating layer before the barrier layer is formed;
Further comprising:
The bubble removing module, the cleaning module and the annealing module are disposed on one side with the inter-module transfer apparatus interposed therebetween.
And the insulating layer forming module, the barrier layer forming module and the conductor layer forming module are disposed on the other side.
3. The method of claim 2,
An annealing module capable of performing heat treatment on the wafer; And
An activation module for applying an activation material to the wafer via hole to increase adhesion to the insulating layer before the barrier layer is formed;
Semiconductor wafer manufacturing apparatus characterized in that it further comprises.
The method according to any one of claims 1 to 7,
The bubble removing module,
A wafer chuck supporting and fixing a rear surface of the wafer;
A chuck rotation unit for rotating the wafer chuck;
A liquid injection device for injecting a bubble removing liquid into a surface of the wafer fixed to the wafer chuck;
A chamber sealing device for sealing a chamber surrounding the wafer fixed to the wafer chuck; And
A chamber vacuum apparatus for forming a vacuum in the chamber;
Semiconductor wafer manufacturing apparatus comprising a.
The method of claim 8,
And a liquid recovery unit for recovering the bubble removing liquid scattered during the rotation of the wafer chuck.
And the liquid recovery part is formed in a tube shape in which a part of the inner circumference is opened in the circumferential direction, and is formed to surround the outer circumference of the wafer chuck.
The method of claim 8,
A wafer holding vacuum hole is formed on a surface of the wafer chuck which is in contact with the back surface of the wafer,
A chuck vacuum device for generating a vacuum in the wafer holding vacuum hole;
Wherein the semiconductor wafer manufacturing apparatus further comprises:
11. The method of claim 10,
A vacuum device switching unit converting the vacuum hole for holding the wafer to be selectively connected to the chuck vacuum device and the chamber vacuum device;
Wherein the semiconductor wafer manufacturing apparatus further comprises:
The method according to any one of claims 1 to 7,
The insulation layer forming module,
A wafer chuck supporting and fixing a rear surface of the wafer;
A chuck rotation unit for rotating the wafer chuck;
A chamber surrounding the wafer fixed to the wafer chuck to allow processing liquid to be supplied onto the wafer; And
A lamp installed above the chamber;
And the lamps comprise a plurality of lamp channels parallel to and corresponding to the wafer, each lamp channel being independently drive controlled or divided into two or more independent drive controls.
13. The method of claim 12,
The plurality of lamp channels is a semiconductor wafer manufacturing apparatus, characterized in that formed in a concentric circle structure corresponding to the disk-shaped wafer.
The method of claim 13,
A processing liquid recovery part formed in a tubular shape in which a part of the inner circumference is opened in the circumferential direction and surrounding the outer circumference of the wafer chuck so as to recover the processing liquid scattered during the rotation of the wafer chuck;
The chamber is a semiconductor wafer manufacturing apparatus, characterized in that installed so as to be able to lift and lower relative to the processing liquid recovery unit.
The method according to any one of claims 1 to 7,
The barrier layer forming module,
A wafer chuck supporting and fixing a rear surface of the wafer;
A chuck rotation unit for rotating the wafer chuck; A chamber surrounding the wafer fixed to the wafer chuck;
A heater transferring heat to a processing liquid supplied on a wafer surrounded by the chamber;
Semiconductor wafer manufacturing apparatus comprising a.
The method of claim 15,
The wafer chuck is formed of a thermally conductive material, the heater is a semiconductor wafer manufacturing apparatus, characterized in that installed below the wafer chuck so that heat transfer through the wafer chuck.
The method according to any one of claims 1 to 7,
A wafer chuck supporting and fixing a rear surface of the wafer;
A chuck rotation unit for rotating the wafer chuck;
A chamber surrounding the wafer fixed to the wafer chuck; And
A vibrator for vibrating the processing liquid supplied on the wafer surrounded by the chamber;
Semiconductor wafer manufacturing apparatus comprising a.
The method of claim 17,
A vibrator frame installed on the upper side of the chamber to move up and down;
The vibrator is a semiconductor wafer manufacturing apparatus, characterized in that provided in the lower side of the vibrator frame to be able to contact the processing liquid in the chamber when the vibrator frame is lowered.
The method of claim 18,
The vibrator is a semiconductor wafer manufacturing apparatus, characterized in that rotatably installed on the vibrator frame.
The method of claim 19,
The vibrator includes a plurality of vibration elements, the vibration element is a semiconductor wafer manufacturing apparatus, characterized in that arranged asymmetrically with respect to the center of the vibrator.
21. The method of claim 20,
A semiconductor wafer manufacturing apparatus, characterized in that the denser is disposed more closely away from the position closer to the center of the vibrator.
The method according to any one of claims 1 to 7,
The conductor layer forming module,
A wafer chuck supporting and fixing a rear surface of the wafer;
A chuck rotation unit for rotating the wafer chuck;
A first electrode installed to apply electricity to the wafer; And
A second electrode disposed above the wafer chuck so as to face and interact with the first electrode with the wafer interposed therebetween and rotated to stir the processing liquid supplied on the wafer;
Semiconductor wafer manufacturing apparatus comprising a. 23. The method of claim 22,
The second electrode extends in a direction away from the center of rotation of the second electrode and a plurality of second electrode wing member disposed evenly along the rotational circumferential direction;
Semiconductor wafer manufacturing apparatus comprising a.
24. The method of claim 23,
The second electrode wing member is a semiconductor wafer manufacturing apparatus, characterized in that formed in a fan shape.
23. The method of claim 22,
A cap installed on the wafer chuck so as to be lifted and surrounding the wafer fixed to the wafer chuck;
And the second electrode is provided inside the cap.
The method of claim 25,
A portion of the inner circumference is formed in a tube shape opened in the circumferential direction and formed to surround the outer circumference of the wafer chuck so that the processing liquid scattered during the rotation of the wafer chuck may be inserted into the cap. Semiconductor wafer manufacturing apparatus comprising a further.
The method of claim 25,
The cap surrounds the wafer and the processing liquid is stored, and the annular inner chamber is formed so that the stored processing liquid can overflow, and the outer chamber surrounds the outer circumference of the inner chamber and overflows between the inner chamber. A dome-shaped outer chamber having a discharge port formed on one side of the recovery space, and surrounded by the inner chamber at a distance from the inner chamber, positioned above the lower end of the inner chamber, and having an upper end. And an annular skirt formed in the domed outer chamber so as to be positioned higher than an upper end of the inner chamber.
The method of claim 3, wherein
The annealing module,
chamber;
A first wafer chuck installed at one side of the chamber to support and secure the rear surface of the wafer, wherein the wafer is loaded and unloaded;
A second wafer chuck installed on the other side of the chamber to support and fix the back surface of the wafer;
A transfer transferring the wafer between the first wafer chuck and the second wafer chuck;
A cooler installed in the first wafer chuck to cool the wafer fixedly supported by the first wafer chuck; And
A heater installed in the second wafer chuck to heat the wafer fixedly supported by the second wafer chuck;
Semiconductor wafer manufacturing apparatus comprising a.
29. The method of claim 28,
And a chamber cooler for cooling the chamber.
29. The method of claim 28,
A protruding wall protruded higher than the first and second wafer chucks between the first and second wafer chucks in the chamber;
And a transfer elevating device for elevating the transfer so that the transfer can transport the wafer through the protruding wall.

Images