CN111250455A

CN111250455A - Wafer cleaning device

Info

Publication number: CN111250455A
Application number: CN201911158163.1A
Authority: CN
Inventors: 慎吉晟; 南昌铉; 吕寅准
Original assignee: Xia Tai Xin Semiconductor Qing Dao Ltd
Current assignee: Xia Tai Xin Semiconductor Qing Dao Ltd
Priority date: 2018-11-30
Filing date: 2019-11-22
Publication date: 2020-06-09

Abstract

The invention discloses a wafer cleaning device, which comprises: a rotation chamber; a base disposed within the rotation chamber; the rotating assembly is arranged on the base and used for placing a wafer and driving the wafer to rotate; a cleaning solution recovery assembly, the cleaning solution recovery assembly comprising: a first blocking member provided in a manner to surround the rotating assembly; and the heating device is embedded in the first blocking piece and used for heating the first blocking piece.

Description

Wafer cleaning device

Technical Field

The invention relates to the technical field of semiconductors, in particular to a wafer cleaning device.

Background

The wafer generally needs to use chemical substance in the cleaning process, and wafer cleaning device is carrying out abluent in-process to the wafer, along with the rotation of revolving stage, chemical substance can be toward sputtering all around because of receiving the effect of centrifugal force to adhere to the inner wall at the rotatory room. However, the chemical substances are adhered to the baffle plate, and the chemical substances are likely to fall onto the wafer, which causes a problem that the yield of the wafer is lowered.

Disclosure of Invention

In view of the above, it is desirable to provide a wafer cleaning apparatus for rapidly removing the chemical substances adhered to the baffle.

In order to solve the above technical problem, the present invention provides a wafer cleaning apparatus, including: a rotation chamber; a base disposed within the rotation chamber; the rotating assembly is arranged on the base and used for placing a wafer and driving the wafer to rotate; a cleaning solution recovery assembly, the cleaning solution recovery assembly comprising: a first blocking member provided in a manner to surround the rotating assembly; and the heating device is embedded in the first blocking piece and used for heating the first blocking piece.

Compared with the prior art, the wafer cleaning device provided by the invention heats the first blocking piece by embedding the heating device in the first blocking piece, so that in the cleaning process, as the first blocking piece has a certain temperature, the cleaning liquid can be kept in a liquid state and is not easy to attach to the first blocking piece when being splashed onto the first blocking piece, the cleaning liquid is effectively prevented from attaching to the first blocking piece and falling onto the wafer, and thus, the yield of the wafer can be effectively improved.

Drawings

Fig. 1 is a schematic view of a wafer cleaning apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic perspective view of a first blocking member in the wafer cleaning apparatus according to the embodiment of the invention.

Fig. 3A is a diagram showing a case where the chemical substance is attached to the first baffle in the first baffle when the heating device is not embedded in the first baffle.

Fig. 3B is a diagram showing a case where the chemical substance is attached to the first baffle in the first baffle when the heating device is embedded in the first baffle.

Description of the main elements

Wafer cleaning apparatus 100

Wafer 200

Rotary chamber 10

Base 20

Rotating assembly 30

Support 31

Drive assembly 32

Rotating table 33

Nozzle 41

Pipe 42

First stopper 51

First baffle 511

Second baffle 512

Second blocking member 52

Heating device 53

Power supply 54

Detailed Description

While the embodiments of the invention are illustrated in the drawings, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size of layers and regions may be exaggerated for clarity.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Referring to fig. 1, a wafer cleaning apparatus 100 for cleaning a wafer 200 is provided. The wafer cleaning apparatus 100 includes a spin chamber 10, a pedestal 20, a spin module 30, a cleaning solution supply module, and a cleaning solution recovery module.

The susceptor 20 is disposed in the spin chamber 10.

The rotating assembly 30 is disposed on the base 20 and is used for placing the wafer 200 and driving the wafer 200 to rotate for cleaning. In the present embodiment, the rotating assembly 30 includes a support 31, a driving member 32, and a rotating table 33.

The supporting member 31 is disposed on the base 20 for supporting the driving member 32 and the rotating table 33.

The driving member 32 is disposed on the supporting member 31 for providing a driving force to drive the rotation table 33 to rotate, so as to drive the wafer 200 to rotate. In the present embodiment, the driver 32 may be an electric motor.

The rotary table 33 is provided on the driving member 32 and is rotated by the driving force of the driving member 32.

The turntable 33 is used for carrying the wafer 200. More specifically, the turntable 33 is provided with a suction cup (not shown) for sucking the wafer 200 to rotate the wafer 200 along with the turntable 33. The chuck communicates with a suction device (not shown) so that the wafer 200 is held by the chuck by a negative pressure generated by the suction device and is rotated by the turntable 33. It will be appreciated that the suction cup may be made of a porous material.

It is understood that during the cleaning process of the wafer 200, the rotating assembly 200 is rotated under the control of a control device (not shown), so as to rotate the wafer 200, thereby cleaning the wafer 200.

The cleaning solution supply assembly is used for supplying a cleaning solution to clean the wafer 200. In the present embodiment, the cleaning liquid is usually a chemical cleaning liquid or the like.

The cleaning solution supply unit includes a nozzle 41, and the nozzle 41 is disposed above the wafer 200 to sputter the cleaning solution onto the wafer 200 for cleaning. In the present embodiment, the cleaning liquid supply unit is disposed outside the spin chamber 10, and introduces and sprays the cleaning liquid onto the wafer 200 through the pipe 42 and the like. Of course, in other embodiments, the cleaning liquid supply assembly may be implemented in other manners, and is not limited herein.

In the present embodiment, the temperature of the cleaning liquid is in the range of 60 to 70 ℃, for example, 60 ℃, 65 ℃ or 70 ℃.

It can be understood that, compared with the case that the cleaning liquid is at normal temperature in the prior art, the temperature of the cleaning liquid is set to be 60-70 ℃, so that residual impurities on the wafer 200 can be removed quickly, and the cleaning efficiency of the wafer 200 is improved.

The cleaning solution recycling assembly is disposed around the rotating assembly 30 to block the cleaning solution sputtered from the edge of the wafer 200 from contaminating the peripheral environment during the cleaning process, and to recycle the cleaning solution.

Specifically, the cleaning liquid recovery assembly includes a first stopper 51, a second stopper 52, a heating device 53, and a power source 54.

The first blocking member 51 is disposed in a manner to surround the rotating assembly 30. In the present embodiment, the first baffle 51 includes a first baffle 511 and a second baffle 512, the first baffle 511 is disposed on the susceptor 20, and the second baffle 515 is disposed at an end of the first baffle 511 away from the susceptor 20. In the present embodiment, the first baffle 511 and the second baffle 512 are formed in a cup shape, that is, the first baffle 511 has a hollow cylindrical shape, and the second baffle 512 has an inner diameter that gradually decreases in a direction from an end connected to the first baffle 511 to an end distant from the first baffle 511. In addition, the height of the first baffle 511 is not lower than the height of the wafer 200. By providing the first stoppers 51 having such a structure, the cleaning liquid can be effectively prevented from splashing on the inner wall of the spin chamber 10.

Of course, in other embodiments, the shape of the first baffle 511 and the second baffle 512 may be other shapes, and is not limited herein.

In the present embodiment, the first blocking member 51 is made of a polytetrafluoroethylene material. Of course, in other embodiments, the material may be made of other materials, and is not limited herein.

Referring to fig. 2, in the present embodiment, the heating device 53 is embedded in the first blocking member 51, that is, the heating device 53 is embedded in the first blocking member 511 and the second blocking member 512, and is used for heating the first blocking member 51, so that the temperature of the first blocking member 51 is within a range of 50 to 70 ℃, for example, 50 ℃, 60 ℃, or 70 ℃. Of course, in other embodiments, the heating device 53 may be embedded in only the first baffle 511 or the second baffle 512, which is not limited herein.

Further, please refer to fig. 3A and fig. 3B, wherein fig. 3A is a diagram illustrating a situation of the chemical substance attached to the first baffle 511 of the first baffle 51 when the heating device 53 is not embedded in the first baffle 51, and fig. 3B is a diagram illustrating a situation of the chemical substance attached to the first baffle 511 of the first baffle 51 when the heating device 53 is embedded in the first baffle 51. As can be seen from comparing fig. 3A and 3B, in fig. 3A, a chemical substance is attached to the first barrier 511, and in fig. 3B, no chemical substance is attached to the first barrier 511. As described above, since the heating device 53 is embedded in the first stopper 51, the heating device 53 can heat the first stopper 51, and thus, when the temperature of the first stopper 51 is in the range of 50 to 70 ℃, the chemical substance is not easily solidified because the chemical substance is kept in a liquid state, and thus is not easily attached to the first stopper 51.

Further, in the present embodiment, the heating means 53 may be a wire shape embedded in the first blocking member 51 at equal intervals. Of course, in other embodiments, other heating devices 53 may be provided, and are not limited herein.

The second blocking member 52 is disposed between the first blocking member 51 and the cleaning assembly, and the second blocking member 52 is disposed in parallel with the first blocking plate 511.

It can be understood that, by disposing the second blocking member 52 between the first blocking member 51 and the cleaning assembly, and disposing the second blocking member 52 in parallel with the first blocking member 511, a recycling slot is formed between the first blocking member 511 and the second blocking member 52, so that the cleaning solution can be recycled to prevent contamination.

The power supply 54 is provided outside the rotating chamber 10 and is electrically connected to the heating device 53. Of course, in other embodiments, the power source 54 may be disposed in the rotating chamber 10, and is not limited herein.

It can be understood that when the cleaning liquid is sprayed on the wafer 200 by the nozzle 41, the cleaning liquid will splash from the edge of the wafer 200 to the periphery due to the centrifugal force, and the cleaning liquid can be effectively blocked and recovered by the cleaning liquid recovery assembly in the present invention, so that the cleaning liquid is effectively prevented from splashing on the inner wall of the spin chamber 10. In addition, when the wafer cleaning device 100 is cleaned, only the cleaning solution recovery assembly needs to be cleaned, and the cleaning efficiency can be effectively improved.

Compared with the prior art, the wafer cleaning apparatus 100 provided by the present invention heats the first blocking member 51 by embedding the heating device 53 in the first blocking member 51, so that, in the cleaning process, since the first blocking member 51 has a certain temperature, the cleaning liquid is kept in a liquid state when being splashed onto the first blocking member 51 and is not easily attached to the first blocking member 51, thereby effectively preventing the cleaning liquid from being attached to the first blocking member 51 and falling onto the wafer 200, and thus, the yield of the wafer 200 can be effectively improved.

Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.

Claims

1. A wafer cleaning apparatus, comprising:

a rotation chamber;

a base disposed within the rotation chamber;

the rotating assembly is arranged on the base and used for placing a wafer and driving the wafer to rotate;

a cleaning solution recovery assembly, the cleaning solution recovery assembly comprising:

a first blocking member provided in a manner to surround the rotating assembly;

and the heating device is embedded in the first blocking piece and used for heating the first blocking piece.

2. The wafer cleaning apparatus according to claim 1,

the heating device enables the temperature of the first barrier to be within the range of 50-70 ℃.

3. The wafer cleaning apparatus according to claim 1,

the first barrier is made of a polytetrafluoroethylene material.

4. The wafer cleaning apparatus according to claim 1,

the first baffle comprises a first baffle and a second baffle, and the shape formed by the first baffle and the second baffle is cup-shaped.

5. The wafer cleaning apparatus as claimed in claim 4, wherein the cleaning solution recovery assembly further comprises:

the second blocking piece is arranged between the first blocking piece and the cleaning assembly and is arranged in parallel with the first baffle.

6. The wafer cleaning apparatus according to claim 1, further comprising:

and the cleaning solution supply assembly comprises a nozzle which is arranged above the wafer and is used for spraying cleaning solution to the wafer for cleaning.

7. The wafer cleaning apparatus as claimed in claim 6, wherein the temperature of the cleaning liquid is in the range of 60-70 ℃.

8. The wafer cleaning apparatus as claimed in claim 1, wherein the cleaning solution recovery assembly further comprises:

a power supply disposed outside the spin chamber and electrically connected to the heating device.

9. The wafer cleaning apparatus of claim 1, wherein the rotation assembly comprises:

a rotating table;

and the sucking disc is arranged on the rotating table and is used for sucking the wafer so as to enable the wafer to rotate along with the rotation of the rotating table.

10. The wafer cleaning apparatus of claim 9, wherein the rotation assembly further comprises:

a support member disposed on the base;

and the driving piece is arranged on the supporting piece and used for driving the rotating platform to rotate.