KR20080030203A - Apparatus and method for cleaning substrates - Google Patents

Abstract

A substrate cleaning apparatus and a substrate cleaning method using the same are provided to supply a dry fluid onto a substrate by arranging a fluid supply member near to an upper part of a substrate. A substrate cleaning apparatus includes a substrate supporting member(100) and a fluid supply member(300). A substrate is loaded on the substrate supporting member having a rotating function. The fluid supply member has a shape corresponding to the substrate loaded on the substrate supporting member. The fluid supply member is arranged above an upper surface of the substrate in order to supply a rinsing solution and a dry fluid onto the substrate. The substrate cleaning apparatus includes a lifting unit(360) for moving the fluid supply member to a position near to an upper part of the substrate when the rinsing solution and the dry fluid are supplied onto the substrate.

Description

Substrate cleaning apparatus and substrate cleaning method using the same {APPARATUS AND METHOD FOR CLEANING SUBSTRATES}

1 is a schematic configuration diagram showing an example of a substrate cleaning apparatus according to the present invention;

2A to 2E are schematic operating state diagrams respectively shown for explaining an operating state of the substrate cleaning apparatus according to the present invention.

<Description of Symbols for Main Parts of Drawings>

10 substrate cleaning apparatus 100 substrate supporting member

110: support plate 120: support shaft

130: first drive unit 200: chemical liquid injection unit

210: nozzle 240: second drive part

300: fluid supply member 310: injection plate

312 injection hole 320 fluid supply pipe

360: lifting unit 370: ultrasonic vibrator

400: Paul

The present invention relates to a semiconductor manufacturing apparatus and method, and more particularly, to a substrate cleaning apparatus for removing contaminants remaining on the surface of the substrate and a method for cleaning the substrate using the same.

In general, as semiconductor devices become dense, highly integrated, and high-performance, microcirculation of circuit patterns proceeds rapidly, and contaminants such as particles, organic contaminants, and metal contaminants remaining on the surface of the substrate have a great effect on device characteristics and production yield. Will be affected. For this reason, the cleaning process for removing various contaminants adhering to the substrate surface is very important in the semiconductor manufacturing process, and the substrate cleaning process is performed at each step before and after each unit process of semiconductor manufacturing.

The cleaning process of a semiconductor substrate can be divided into a chemical processing process, a rinse process, and a drying process. The chemical liquid treatment process is a process of etching or peeling contaminants on a substrate by a chemical reaction using a chemical liquid such as hydrofluoric acid, etc. The rinse process is a process of washing the chemically treated semiconductor substrate with a rinse liquid such as deionized water, and drying. The process is a process of finally drying the substrate.

As a device for performing a drying process, a spin dryer of a method of spraying isopropyl alcohol (IPA) vapor on a surface of a rotating substrate has been generally used. However, in the conventional spin dryer, as the pattern formed on the substrate is miniaturized, it is difficult to completely remove deionized water or the like remaining on the substrate, but rather, contaminants collect in water droplets such as deionized water remaining on the substrate. There was a problem remaining on the substrate surface.

In addition, the conventional spin dryer has a problem that the substrate is contaminated due to the vortex generated by the high-speed rotation of the substrate.

Accordingly, the present invention has been made to solve the problem in view of the conventional spin dryer as described above, the object of the present invention is a substrate cleaning apparatus and substrate using the same that can improve the drying efficiency of the substrate It is for providing a cleaning method.

An object of the present invention is to provide a substrate cleaning apparatus capable of minimizing back contamination of a substrate during a cleaning process and a method of cleaning a substrate using the same.

In order to achieve the above object, a substrate cleaning apparatus according to the present invention, comprising: a substrate support member on which a substrate is placed and rotatable; And a fluid supply member having a shape corresponding to the substrate placed on the substrate support member and disposed above the substrate, and sequentially supplying a rinse liquid and a drying fluid onto the substrate.

In the substrate cleaning apparatus according to the present invention having the configuration as described above, the apparatus is moved up and down to move the fluid supply member to the adjacent position of the upper portion of the substrate upon supply of the rinse liquid and the drying fluid on the substrate It is preferable to further include a.

According to an aspect of the invention, the device is disposed on one side of the substrate support member, and preferably further comprises a chemical liquid injection unit for injecting the chemical liquid on the substrate.

According to another aspect of the invention, it is preferable that the injection hole for injecting the rinse liquid and the drying fluid on the substrate is formed in the center of the fluid supply member.

The apparatus further includes a deionized water supply line for supplying deionized water (DIW) to the fluid supply member; An isopropyl alcohol supply line for supplying liquid isopropyl alcohol (IPA) to the fluid supply member; It is preferable to further include a; dry gas supply line for supplying a dry gas to the fluid supply member.

According to one aspect of the invention, the device is installed on the fluid supply member, and the ultrasonic vibrator for generating and delivering ultrasonic waves to the liquid isopropyl alcohol supplied on the substrate treated by the rinse liquid; Preferably, the ultrasonic vibrator includes a piezoelectric element.

According to another feature of the invention, the fluid supply member is preferably made of a conductive synthetic resin material to prevent the ignition (ignition) of the liquid isopropyl alcohol by static electricity.

The fluid supply member is preferably made of any one of polyaniline, polypyrrole, polythiophene, and polyethylene with conductive fillers.

In order to achieve the above object, a substrate cleaning method according to the present invention includes a method of cleaning a substrate, the method comprising: treating the substrate by supplying a chemical liquid onto a rotating substrate; Supplying a rinse liquid onto the chemically treated substrate to remove the chemical liquid on the substrate; Supplying liquid isopropyl alcohol on the substrate treated with the rinse liquid to remove the rinse liquid on the substrate; And drying the substrate by supplying a dry gas onto the substrate treated with the liquid isopropyl alcohol.

In the substrate cleaning method according to the present invention having the configuration as described above, the rinse liquid and the liquid isopropyl alcohol has a shape corresponding to the substrate and sequentially on the substrate through a fluid supply member disposed above the substrate. Is preferably supplied to.

According to an aspect of the present invention, the fluid supply member is positioned adjacent to the upper portion of the substrate to block external air from flowing into the space between the fluid supply member and the substrate when the rinse liquid and the liquid isopropyl alcohol are supplied. It is preferable to move up and down.

According to another feature of the invention, the step of removing the rinse liquid on the substrate by supplying the ultrasonic wave to the liquid isopropyl alcohol while supplying the liquid isopropyl alcohol on the substrate treated by the rinse liquid on the substrate It is preferable to remove the rinse liquid.

Hereinafter, a substrate cleaning apparatus and a substrate cleaning method using the same according to a preferred embodiment of the present invention with reference to the accompanying drawings will be described in detail. First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible, even if shown on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

(Example)

1 is a schematic block diagram showing an example of a substrate cleaning apparatus according to the present invention.

Referring to FIG. 1, the substrate cleaning apparatus 10 according to the present exemplary embodiment includes a substrate support member 100, a chemical liquid injection unit 200, a fluid supply member 300, and a pole unit 400.

The chemical liquid injection unit 200 supplies chemical chemicals onto the substrate W placed on the substrate support member 100 to etch or peel off contaminants on the substrate. The fluid supply member 300 sequentially supplies the rinse liquid and the drying fluid onto the chemically treated substrate W. FIG. The rinse liquid supplied onto the substrate W cleans the substrate surface to remove etched or peeled contaminants on the substrate. The drying fluid removes the rinse liquid on the substrate W and finally dries the substrate. In addition, a substrate for performing a cleaning process using the substrate cleaning apparatus of the present embodiment includes a wafer for manufacturing a semiconductor device.

The substrate support member 100 supports the substrate W and has a support plate 110 having a circular top surface. The support shaft 120 is connected to the lower portion of the support plate 110, and the support shaft 120 is connected to the first driver 130. The first driving unit 130 may move the support shaft 120 in the vertical direction when loading / unloading the substrate W on the support plate 110, and the support shaft 120 may be moved while the process is in progress. By rotating, the substrate W placed on the support plate 110 is rotated.

The substrate support member 100 may vacuum-adsorb the substrate W through a vacuum line (not shown) provided in the support plate 110. Alternatively, as the substrate support member 100, an electrostatic chuck (ESC) that adsorbs and supports the substrate by electrostatic power may be used, and the substrate W may be moved by the mechanical clamping method. It can also be fixed at.

The chemical liquid injection unit 200 is disposed on one side of the substrate support member 100, and on the substrate W placed on the substrate support member 100 to etch or peel off contaminants on the substrate W by a chemical reaction. Supply chemicals such as hydrofluoric acid to the solution. Here, the configuration of the chemical liquid injection unit 200 will be described with reference to FIG. 2B to be described later. The chemical liquid injection unit 200 is vertically disposed and has a nozzle 210 for supplying the chemical liquid toward the substrate W. The nozzle 210 is connected to one end of the nozzle support 220, and the nozzle support 220 is disposed in a horizontal direction to maintain a right angle with the nozzle 210. The other end of the nozzle support 220 is disposed in the vertical direction to maintain a right angle with the nozzle support 220, the moving rod 230 for moving the nozzle 210 during or before the process is coupled. In addition, the moving rod 230 is connected to the second driver 240. The second driving unit 240 for moving the moving rod 230 may be a motor for rotating the nozzle 210, and optionally an assembly for linearly moving the nozzle 210 in the vertical direction.

The fluid supply member 300 supplies the rinse liquid and the drying fluid onto the chemically treated substrate W. FIG. The rinse liquid and the drying fluid are sequentially supplied onto the substrate in the order of progress of the rinse process and the drying process. Deionized water (DIW) may be used as the rinse liquid, and a drying gas having an inert such as liquid isopropyl alcohol (IPA) and nitrogen gas may be used as the drying fluid.

The fluid supply member 300 includes an injection plate 310 disposed above the substrate W and having a shape corresponding to the substrate W. An injection hole 312 for injecting a rinse liquid and a drying fluid onto the substrate W is formed at the center of the injection plate 310. The injection hole 312 may be formed in the form of a single hole in the center of the injection plate 310, and may be formed in the form of a plurality of holes uniformly over the lower front surface of the injection plate 310.

When the liquid isopropyl alcohol is supplied onto the substrate W through the injection hole 312 of the spray plate 310, the spray plate 310 prevents ignition by static electricity of the liquid isopropyl alcohol. It may be provided with a conductive synthetic resin material. As the conductive synthetic resin, polyaniline, polypyrole, polythiophene, or the like may be used, and a polyethylene with a filler to give conductivity may be used.

A fluid supply pipe 320 is connected to an upper portion of the injection plate 310 so as to communicate with the injection hole 312, and a rinse liquid (deionized water), isopropyl alcohol (IPA), and a dry gas (N ₂ ) are connected to the fluid supply pipe 320. Gas supply lines 330, 340 and 350 are connected. On each of the supply lines 330, 340, 350, valves 332, 342, 352 are arranged for opening and closing the supply lines 330, 340, 350.

When using a fluid supply member 300 to supply a rinse liquid or a drying fluid such as isopropyl alcohol or a dry gas to the substrate W, the distance between the fluid supply member 300 and the substrate W may be spaced therebetween. It is preferable that the space be kept below a predetermined interval to block the inflow of outside air into the space. To this end, the lifting unit 360 is connected to the fluid supply member 300 to move the fluid supply member 300 up and down to an adjacent position of the upper portion of the substrate W. The same drive source can be provided.

As described above, the rinse liquid or the drying fluid is supplied onto the substrate W while the fluid supply member 300 is moved to an adjacent position above the substrate W by the lifting unit 360. In particular, when isopropyl alcohol is supplied as a drying fluid, a means for easily replacing the isopropyl alcohol with a residual rinse liquid (deionized water) on the substrate is required. ) May be used. The ultrasonic vibrator 370 may be disposed on an upper surface of the jet plate 310, and a plurality of ultrasonic vibrators 370 may be disposed to cover the entire surface of the substrate W. FIG. As the ultrasonic plate vibrator 370, a piezoelectric element or the like may be used.

The ultrasonic vibrator 370 receives an electrical signal of a predetermined frequency and converts it into mechanical vibration. Mechanical vibration of the ultrasonic vibrator is transmitted to the spray plate 310, through which ultrasonic waves are supplied to the isopropyl alcohol layer under the spray plate 310. The ultrasonic wave supplied to the isopropyl alcohol layer generates bubbles in the isopropyl alcohol layer, and the bursting of the bubbles makes it easier to replace the isopropyl alcohol and the rinse liquid (deionized water).

On the other hand, the circumference of the substrate support member 100 is disposed with a bowl portion 400 for preventing the chemical liquid, rinse liquid, isopropyl alcohol, and the like supplied on the substrate W from scattering. Paul 400 has a generally cylindrical shape. The paul 400 has a circular bottom wall 410 and a side wall 420 extending above the bottom wall 410. An exhaust hole 412 is formed in the lower wall 410, and an exhaust pipe 430 is provided in communication with the exhaust hole 412. An exhaust member 440, such as a pump, is disposed on the exhaust pipe 430, and the exhaust member 440 provides a negative pressure to exhaust air in the vessel containing the chemical liquid scattered by the rotation of the substrate W.

2A to 2E are schematic operating state diagrams respectively shown for explaining an operating state of the substrate cleaning apparatus according to the present invention.

The substrate cleaning process includes a chemical treatment process, a rinsing process, and a drying process. Each of the processes will be described below with reference to FIGS. 2A through 2E.

First, the substrate support member 100 is moved up and down by the first driving unit 130 while the fluid supply member 300 is moved to the outer upper portion of the paul 400 using the lifting unit 360. To load the substrate W on the support plate 110 (FIG. 2A).

When the substrate W is loaded on the support plate 110 of the substrate support member 100, the second driving unit 240 is driven to move and move the moving rod 230 up and down to rotate the nozzle 210 of the substrate W. Position it at the top. Then, the first driving unit 130 is driven to rotate the substrate W placed on the substrate supporting member 100, and the chemical liquid is injected onto the substrate W through the nozzle 210. The chemical liquid injected onto the substrate W is etched or peeled off the contaminants on the substrate W while being evenly spread over the entire surface of the substrate W by centrifugal force caused by the rotation of the substrate W. (FIG. 2B). )

When the chemical liquid treatment process of the substrate W is completed by the above-described process, the rinse process is performed as a subsequent process. In order to proceed with the rinse process, the second driving unit 240 is driven to move and rotate the moving rod 230 up and down to move the nozzle 210 to the outside of the paul 400. In this state, the fluid supply member 300 is moved to an adjacent position on the upper portion of the substrate W by using the lifting part 360. As a result, when the rinse liquid is supplied onto the substrate W, external air may be prevented from flowing into the space between the fluid supply member 300 and the substrate W, and also generated by the high speed rotation of the substrate W. The reverse contamination of the substrate W by the vortex can be minimized. When the fluid supply member 300 is moved to an adjacent position above the substrate W, the valve 332 is opened and rinsed onto the substrate W that rotates through the injection hole 312 of the fluid supply member 300. Supply liquid (deionized water). The rinse liquid supplied onto the substrate W cleans the surface of the substrate to remove etched or peeled contaminants on the substrate W (FIG. 2C).

When the rinse process is completed by the above-described process, the drying process proceeds as a subsequent process. The drying process includes a process of removing a rinse liquid by supplying liquid isopropyl alcohol (IPA) on the substrate W and a process of finally drying the substrate by supplying a dry gas onto the substrate.

After completion of the rinse process, the fluid supply member 300 is positioned at an adjacent position above the substrate W, and closes the valve 332 and opens the valve 342 to supply isopropyl alcohol onto the rotating substrate W. do. In this case, ultrasonic waves are supplied to the isopropyl alcohol layer between the jet plate 310 and the substrate W by using the ultrasonic vibrator 370. When the ultrasonic waves are supplied to the isopropyl alcohol layer, the ultrasonic waves generate bubbles in the isopropyl alcohol layer, and the isopropyl alcohol and the rinse liquid (deionized water) are more easily replaced by the rupture of the bubbles so that the substrate (W) The rinse liquid of the phase is removed.

Thereafter, the valve 342 is closed and the valve 352 is opened to supply an inert dry gas such as nitrogen gas to the substrate W through the injection hole 312 of the fluid supply member 300, thereby providing the substrate W. Final dry. (FIG. 2E)

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical ideas falling within the scope of the present invention should be construed as being included in the scope of the present invention.

As described above, according to the present invention, the liquid isopropyl alcohol and the liquid isopropyl alcohol on the substrate through a fluid supply member disposed adjacent to the upper side of the substrate so as to cover the entire surface of the substrate; By supplying the same drying fluid, the drying efficiency of the substrate can be improved.

In addition, according to the present invention, it is possible to minimize the back contamination of the substrate by the vortex generated by the high speed rotation of the substrate.

Claims (13)

In the apparatus for cleaning the substrate, A substrate support member on which the substrate is placed and rotatable; A fluid supply member having a shape corresponding to the substrate placed on the substrate support member and disposed above the substrate, and sequentially supplying a rinse liquid and a drying fluid onto the substrate; Substrate cleaning apparatus comprising a. The method of claim 1, The device, And an elevating part configured to move the fluid supply member up and down to an adjacent position on the substrate when the rinse liquid and the drying fluid are supplied onto the substrate. The method of claim 2, The device, And a chemical liquid injector disposed on one side of the substrate support member and injecting the chemical liquid onto the substrate. The method according to any one of claims 1 to 3, And a spray hole for injecting the rinse liquid and the drying fluid onto the substrate at a central portion of the fluid supply member. The method of claim 4, wherein The device, A deionized water supply line for supplying deionized water (DIW) to the fluid supply member; An isopropyl alcohol supply line for supplying liquid isopropyl alcohol (IPA) to the fluid supply member; And a dry gas supply line supplying a dry gas to the fluid supply member. The method of claim 5, wherein The device, And an ultrasonic vibrator installed in the fluid supply member and configured to transmit ultrasonic waves to the liquid isopropyl alcohol supplied on the substrate processed by the rinse liquid. The method of claim 6, And the ultrasonic vibrator comprises a piezoelectric element. The method of claim 4, wherein The fluid supply member, Substrate cleaning device, characterized in that provided with a conductive synthetic resin material to prevent the ignition (ignition) of the liquid isopropyl alcohol by static electricity. The method of claim 4, wherein The fluid supply member, Substrate cleaning apparatus, characterized in that the polyaniline, polypyrrole, polythiophene, and polyethylene provided with a filler for imparting conductivity. In the method for cleaning the substrate, Supplying a chemical liquid onto a rotating substrate to process the substrate; Supplying a rinse liquid onto the chemically treated substrate to remove the chemical liquid on the substrate; Supplying liquid isopropyl alcohol on the substrate treated with the rinse liquid to remove the rinse liquid on the substrate; And drying the substrate by supplying a dry gas onto the substrate treated with the liquid isopropyl alcohol. The method of claim 10, And the rinse liquid and the liquid isopropyl alcohol have a shape corresponding to the substrate and are sequentially supplied onto the substrate through a fluid supply member disposed above the substrate. The method of claim 11, When the supply of the rinse liquid and the liquid isopropyl alcohol, the fluid supply member is moved up and down to the adjacent position of the upper portion of the substrate to block the outside air flow into the space between the fluid supply member and the substrate Substrate Cleaning Method. The method according to any one of claims 10 to 12, Removing the rinse liquid on the substrate, And removing rinse liquid on the substrate by transmitting ultrasonic waves to the liquid isopropyl alcohol while supplying the liquid isopropyl alcohol on the substrate treated with the rinse liquid.

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