KR20130143307A - Polishing equipment of mask blank substrate and method of polishing for mask blank substrate using the same - Google Patents

Polishing equipment of mask blank substrate and method of polishing for mask blank substrate using the same Download PDF

Info

Publication number
KR20130143307A
KR20130143307A KR1020120066754A KR20120066754A KR20130143307A KR 20130143307 A KR20130143307 A KR 20130143307A KR 1020120066754 A KR1020120066754 A KR 1020120066754A KR 20120066754 A KR20120066754 A KR 20120066754A KR 20130143307 A KR20130143307 A KR 20130143307A
Authority
KR
South Korea
Prior art keywords
abrasive
substrate
polishing
mask blank
fluid
Prior art date
Application number
KR1020120066754A
Other languages
Korean (ko)
Inventor
남기수
강긍원
이종화
김세훈
이재환
장재봉
Original Assignee
주식회사 에스앤에스텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에스앤에스텍 filed Critical 주식회사 에스앤에스텍
Priority to KR1020120066754A priority Critical patent/KR20130143307A/en
Publication of KR20130143307A publication Critical patent/KR20130143307A/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/12—Devices for exhausting mist of oil or coolant; Devices for collecting or recovering materials resulting from grinding or polishing, e.g. of precious metals, precious stones, diamonds or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
    • B24B7/242—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass for plate glass

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention is a method of applying an abrasive to the substrate by using pressure to polish the substrate before or at the same time during the unloading of the substrate after the polishing process of the substrate from the polishing pad of the upper plate without contamination and damage of the substrate. The substrate can be safely peeled off.
Accordingly, it is possible to prevent the loss of the substrate and damage to the polishing pad generated during the polishing process can reduce the cost and improve the productivity of the polishing process.

Description

Polishing equipment of mask blank substrate and method of polishing for mask blank substrate using the same}

The present invention relates to a mask blank substrate polishing apparatus and a mask blank substrate polishing method using the same, and more particularly, a mask that can be safely separated from a substrate polishing apparatus without contamination and damage to the substrate after polishing the mask blank substrate. A blank substrate polishing apparatus and a mask blank substrate polishing method using the same.

The photomask, a key component material used in the lithography process, which is a core technology of semiconductor device fabrication, is manufactured by forming a pattern by mask blank using e-Beam. Since the performance of the photomask is determined by the performance of the mask blank, and the performance of the mask blank may depend on the performance of the mask blank substrate, the processing technique and method of the mask substrate is considered an important core technology.

In recent years, due to the high density and high precision of semiconductor circuits, 6-inch transparent substrates for electronic devices such as mask blank substrates are required to have even higher defect levels.

The surface defect of the transparent substrate is not significantly affected by the pattern during wafer transfer in lithography using long wavelength light of 365 nm or more. However, in recent years, lithography for semiconductor manufacturing has been shortening the wavelength of exposure to 248 nm KrF, 193 nm ArF, 157 nm F2, and 13.5 nm EUV. Such shortening of the exposure wavelength may cause small particles or defects on the mask substrate to affect the transfer pattern and develop into mask defects such as CD defects (Critical Dimension Error). In the case of a phase shift photomask, a mask defect is caused by affecting a previously designed phase inversion and transmittance.

Therefore, since this acts as a factor degrading the quality of the mask, substrate defects and particle control is becoming an important technology in the processing technology of the substrate. In addition, the surface roughness of the substrate should be excellent in order to minimize light scattering at an increasingly short exposure wavelength and to improve contrast during wafer transfer in a semiconductor process.

Polishing is a process of controlling the thickness and surface roughness of a substrate by physical or chemical reactions. In this case, the surface roughness of the substrate is determined according to the characteristics of the abrasive 132 and the polishing pad to be used. Accordingly, in order to achieve productivity, target thickness, and surface roughness, a plurality of polishing processes in which the abrasive 132 and the polishing pad are different from each other. Proceed with polishing.

In the polishing process, a plurality of substrates are mounted on a carrier of a substrate polishing apparatus and the polishing pads are attached to the upper and lower plates for a predetermined time while the abrasive is supplied.

However, after the polishing process is completed, the top plate is raised to unload the substrate. In this process, when the polishing pad is made of, for example, a suede material, the substrate is squeezed onto the top plate to form a substrate. Ascending with the upper surface will occur. In this case, a hand or a tool is used and the substrate is peeled from the polishing pad of the upper surface plate. In this process, problems such as damage to the polishing pad or the surface of the substrate are contaminated and the substrate suddenly falls in the lower plate direction are broken. Will occur.

The present invention is a method of applying the abrasive used for polishing the substrate before or at the same time during the unloading of the substrate after the polishing process of the substrate to the substrate by using a pressure from the polishing pad of the upper plate without contamination and damage of the substrate. Provided are a substrate blanking apparatus for a mask blank which can be safely peeled off, and a method of peeling a substrate for a mask blank using the same.

In the substrate blanking apparatus for a mask blank according to the embodiment of the present invention, an abrasive for polishing a substrate disposed in a carrier and polished by polishing pads attached to the upper and lower plates is stored, and the inside thereof is maintained at atmospheric pressure. An abrasive supply unit having a plurality of pores, an abrasive injection line connected to the abrasive supply unit and the top plate, a fluid supply line connected to the abrasive supply unit, and a connection to the fluid supply line to peel a substrate attached to the top plate by a polishing process And a pump for injecting a fluid to increase the pressure in the abrasive supply part and injecting the abrasive in the abrasive supply part at a predetermined pressure to the upper plate through the abrasive injection line.

And a sun gear and an internal gear for rotating the carrier, the upper and lower plates for polishing the substrate.

The abrasive injection line is disposed in plurality in a portion corresponding to the substrate.

The apparatus further includes an abrasive supply line connected to the abrasive supply unit, and further includes a valve provided in the abrasive supply line and the fluid supply line, respectively.

Further, in the method of polishing a mask blank substrate using the mask blank substrate polishing apparatus according to the present invention, the abrasive is loaded through the abrasive injection line while loading the substrate into a carrier and rotating the carrier, the upper and lower plates. The substrate is polished with an abrasive in a supply part, the fluid is supplied to the pump through the fluid supply line to increase the pressure in the abrasive supply part, and the abrasive in the abrasive supply part is supplied through the abrasive injection line at a predetermined pressure. The substrate is peeled off from the top plate.

The abrasive injection through the abrasive injection line is performed before or simultaneously with the rising of the upper half.

Increasing the pressure in the abrasive supply unit is performed while the valve provided in the abrasive supply line is closed.

The fluid uses air.

The present invention is a method of spraying an abrasive, which is used for polishing a substrate, at the same time before or after the rising of the top plate at the time of unloading the substrate after the polishing process of the substrate, using pressure to remove the substrate from the polishing pad of the top plate without contamination and damage of the substrate. It can be peeled off safely.

Accordingly, it is possible to prevent the loss of the substrate and damage to the polishing pad generated during the polishing process can reduce the cost and improve the productivity of the polishing process.

1 is a view showing a substrate blanking apparatus for a mask blank according to an embodiment of the present invention.
FIG. 2 is a sectional view of a portion “A” of FIG. 1. FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing a substrate blanking apparatus for a mask blank according to an embodiment of the present invention, Figure 2 is a cross-sectional view showing a portion "A" of FIG.

Referring to FIG. 1, a substrate polishing apparatus 100 for a blank mask according to an embodiment of the present invention may include a sun gear 102, an internal gear 104, a carrier 106, an upper plate 108, and a lower plate ( 110, an abrasive recovery part 114, and an abrasive supply part 122.

The blank mask substrate polishing apparatus 100 loads the blank mask substrate 130 onto the carrier 106, and then the top plate 108 having the polishing pads 112 attached to the surface of the substrate 130 and the surface thereof. The carrier 106 is brought into close contact with the lower plate 110, and both surfaces of the mask blank substrate 130 are simultaneously polished while supplying the abrasive 132 to have high quality flatness. The upper plate 108, the lower plate 110, and the carrier 106 rotate in the same direction or the opposite direction by the rotation of the sun gear 102 and the internal gear 104, and the substrate ( The mask blank substrate 130 loaded on the carrier 106 fixing the 130 is polished.

The mask blank substrate is made of soda lime, natural quartz glass or synthetic quartz glass, and a base material sliced from quartz ingots is manufactured through a plurality of grinding and polishing processes.

In the polishing process, for example, the main surface polishing process of the substrate 130 may be a lapping process and a polishing process using double-side polishing equipment, and each process may be performed in a plurality of steps. When the lapping process is performed in a single step, the lapping process is performed under high pressure using a large size of abrasive particles in consideration of process efficiency. This can reduce the thickness in a short time, but makes it difficult to precisely control the thickness and deepens the damage layer containing cracks that are created in the depth direction at the substrate surface. Therefore, it is desirable to proceed the lapping process in multiple steps to achieve a good substrate surface defect level while achieving the target thickness accuracy.

In addition, in order to improve surface roughness in the polishing process, the process may be performed in a plurality of steps. The surface roughness of the substrate is determined according to the characteristics of the abrasive 132 and the polishing pad 112 used. Therefore, in order to achieve productivity, target thickness, and surface roughness, it is preferable that polishing is performed in a plurality of polishing processes in which the abrasive 132 and the polishing pad 112 are different.

The abrasive 132 used in the lapping process uses an abrasive 132 containing abrasive particles such as alumina (Al 2 O 3 ), silicon carbide (SiC), the content is 10 to 30 wt%, the size is 7 ~ 14 micrometers. At this time, when the lapping process is performed with large abrasive particles having a size of 14 μm or more, damage including cracks generated in the depth direction occurs on the surface of the mask blank substrate 130, and it is difficult to obtain a good surface state. To increase the processing time of the polishing process to lower the productivity and the use of abrasive particles of 7 ㎛ or less increases the self process time to achieve the target thickness.

In addition, the abrasive 132 used in the polishing process uses an abrasive 132 containing cerium oxide (CeO 2) and colloidal silica (SiO 2) abrasive particles. The content is 10 to 30 wt% and the size is 50 nm to 3 μm. . Since the polishing process improves the surface roughness, the polishing process should be smaller than the average particle diameter of the abrasive grains used in the lapping process. Both cerium oxide and colloidal silica abrasive particles have a spherical shape and are suitable for improving surface roughness.

The overall pH of the abrasive 132 is adjusted to 8 to 12 using nitric acid (HNO 3 ) or potassium hydroxide (KOH). In particular, the addition of an inorganic alkali such as potassium hydroxide (KOH) has the advantage of showing the effect of etching the substrate for the mask blank. In addition, since the pH section is a basic section, it is possible to improve the cleaning power in the cleaning performed after the polishing process.

The abrasive 132 is supplied to the polishing pad 112 and the substrate 130 through the abrasive injection line 122 connected to the top plate 108, the abrasive 132 is an abrasive disposed on the top plate 108 From the supply unit 122 is supplied through the abrasive injection line 122 by the force of gravity. The abrasive 132 used in the polishing process is collected and collected in the abrasive recovery unit 114 disposed below the lower plate 110, and the abrasive is supplied using a first pump P1 connected to the abrasive recovery unit 114. It is transferred to the abrasive supply 122 through line 124 and reused in the polishing process.

The abrasive supply unit 122 has a sealed form as a part in which the abrasive 132 used in the polishing process is stored. Here, the seal does not mean a state in which the flow of the fluid can be completely blocked, as shown in Figure 2, a plurality of holes (H) is formed so that the interior can maintain the atmospheric pressure. That is, the upper portion of the abrasive supply unit 122 must maintain the atmospheric pressure so that the abrasive 132 is transferred to the upper plate 108 through the abrasive injection line 118 by the force of gravity, for this purpose, the abrasive supply unit 122 The upper portion of the plurality of holes (H) is provided.

The abrasive supply unit 122 is connected to the fluid supply line 124, the fluid supply line 124 is connected to the second pump (P2) to provide the fluid supplied from the second pump (P2) to the abrasive supply unit (122). do. After the polishing process of the mask blank substrate 130 is completed, the second pump P2 and the fluid supply line 124 safely peel off the substrate 130 attached to the polishing pad 112 of the upper plate 108. Used for the purpose.

In detail, after the polishing process of the substrate 130 is completed, the upper plate 108 is raised to unload the substrate 130, and in this process, the substrate 130 is polished to the polishing pad 112 of the upper plate 108. The substrate is raised together with the top plate. In this case, the substrate 130 is peeled off using a hand or a tool. At this time, the polishing pad is damaged or the surface of the substrate is contaminated, and the substrate suddenly falls in the lower plate direction and is broken. In order to prevent this, in the present invention, after the polishing process is completed, the upper plate 108 is raised and at the same time, the fluid, for example, air, is transferred through the second pump P2 and the fluid supply line 124. The substrate 130 is safely peeled from the upper plate 108 by strongly injecting the abrasive 132 into the upper plate 108 through the abrasive injection line 118 at a pressure of a fluid supplied to the abrasive supply unit 122. You can. In addition, the peeling of the substrate 130 may be performed in the same manner as described above after the polishing process is completed and before the raising of the top plate 108. A plurality of abrasive injection lines 118 are disposed in portions corresponding to the substrate 130. In the process of injecting the fluid into the abrasive supply unit 122, the first valve 120 connected to the abrasive supply line 120 is kept closed to prevent the backflow of the abrasive 132. In addition, the second valve 126 connected to the fluid supply line 124 is opened only during the peeling process of the substrate 130, and remains closed during the other polishing process. Here, the pressure of the abrasive 132 injected through the abrasive injection line 118 may be sufficient to peel the substrate 130 from the polishing pad 112 of the upper plate 108.

A plurality of holes (H) provided in the abrasive supply unit 122 maintains the interior at atmospheric pressure and prevents the abrasive 132 from being discharged to the outside through the holes H when the fluid is supplied, and the abrasive 132. Has a diameter and the number so that the substrate 130 is supplied with sufficient force to peel the substrate 130. The abrasive supply unit 122 has a sufficient height so that the abrasive 132 is not discharged to the outside when the fluid is supplied.

The substrate 130 is subjected to the polishing process and the substrate 130 is peeled off, and then the upper surface plate 122 is raised and recovered. The substrate 130 subjected to the polishing process, that is, the substrate after cutting or the substrate 130 wrapped and polished for reuse, is used to manufacture the photomask blank and the photomask using the same.

In addition, although not shown, the abrasive supply unit 122 may have a completely sealed form without a plurality of holes (H). In detail, the abrasive 132 in the abrasive supply unit 122 is injected into the upper plate 108 by gravity during the polishing process, wherein the abrasive supply unit 122 is supplied to the air supplied to the fluid supply line 124. Can maintain the atmospheric pressure. To this end, during the polishing process, the second valve 126 disposed in the fluid supply line 124 has an open state.

As described above, the present invention is a method of spraying an abrasive, which is used for polishing the substrate, at the same time before or at the same time during the unloading of the substrate after the polishing process of the substrate, using pressure to spray the substrate without contamination and damage to the substrate. The substrate can be safely peeled from the polishing pad on the upper surface plate.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation in the embodiment in which said invention is directed. It will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the appended claims.

102: Sun Gear
104: internal gear
106 carrier
108: upper plate
110: lower half
112: Polishing pad
114: abrasive recovery unit
116: abrasive supply line
118: abrasive injection line
120, 126: valve
122: abrasive supply portion
124: fluid supply line
130: mask blank substrate
132: abrasive

Claims (8)

An abrasive supplying portion for storing a substrate which is loaded into a carrier and polished by polishing pads attached to the upper and lower plates, the abrasive supply unit having a plurality of pores therein to maintain the atmospheric pressure;
An abrasive injection line connected to the abrasive supplier and the top plate;
A fluid supply line connected to the abrasive supply part; And
It is connected to the fluid supply line to peel the substrate attached to the top plate in the polishing process, and injects a fluid to increase the pressure inside the abrasive supply part to press the abrasive in the abrasive supply part through the abrasive injection line. And a pump for injecting the upper surface plate into the substrate blanking apparatus for a mask blank. The method of claim 1,
And a sun gear and an internal gear for rotating the carrier, the upper plate and the lower plate for polishing the substrate. The method of claim 1,
And a plurality of abrasive injection lines are disposed in a portion corresponding to the substrate. The method of claim 1,
Further comprising an abrasive supply line connected to the abrasive supply unit,
And a valve is provided in the abrasive supply line and the fluid supply line, respectively. As a grinding | polishing method of the mask blank substrate using the substrate blanking apparatus for mask blanks of any one of Claims 1-4,
(a) loading the substrate into a carrier and polishing the substrate with abrasive in the abrasive feed portion through the abrasive injection line while rotating the carrier, the upper and lower plates; And
(b) supplying a fluid to the pump through the fluid supply line to increase the pressure in the abrasive supply part, and injecting the abrasive in the abrasive supply part at a predetermined pressure through the abrasive injection line to the upper plate to supply the substrate. Peeling from the top plate; Polishing method for a mask blank substrate comprising a. The method of claim 5, wherein
In the step (a), the abrasive injection through the abrasive injection line polishing method of the mask blank substrate, characterized in that performed before or at the same time as the rising of the upper half. The method of claim 5, wherein
In the step (b), the step of increasing the pressure in the abrasive supply unit is performed in the state of closing the valve provided in the abrasive supply line polishing method for the mask blank substrate. The method of claim 5, wherein
The fluid is a polishing method for a mask blank substrate, characterized in that using the air (air).
KR1020120066754A 2012-06-21 2012-06-21 Polishing equipment of mask blank substrate and method of polishing for mask blank substrate using the same KR20130143307A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120066754A KR20130143307A (en) 2012-06-21 2012-06-21 Polishing equipment of mask blank substrate and method of polishing for mask blank substrate using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120066754A KR20130143307A (en) 2012-06-21 2012-06-21 Polishing equipment of mask blank substrate and method of polishing for mask blank substrate using the same

Publications (1)

Publication Number Publication Date
KR20130143307A true KR20130143307A (en) 2013-12-31

Family

ID=49986576

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120066754A KR20130143307A (en) 2012-06-21 2012-06-21 Polishing equipment of mask blank substrate and method of polishing for mask blank substrate using the same

Country Status (1)

Country Link
KR (1) KR20130143307A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109822412A (en) * 2019-03-15 2019-05-31 武忠花 Grinding machine is used in a kind of production of high strength titanium alloy
CN110774166A (en) * 2019-10-29 2020-02-11 西安奕斯伟硅片技术有限公司 Double-side grinding device and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109822412A (en) * 2019-03-15 2019-05-31 武忠花 Grinding machine is used in a kind of production of high strength titanium alloy
CN110774166A (en) * 2019-10-29 2020-02-11 西安奕斯伟硅片技术有限公司 Double-side grinding device and method

Similar Documents

Publication Publication Date Title
JP5332249B2 (en) Glass substrate polishing method
US7732101B2 (en) Method of producing a glass substrate for a mask blank by polishing with an alkaline polishing liquid that contains colloidal silica abrasive grains
TWI614801B (en) Method for a double side polishing of a semiconductor wafer
US10586694B2 (en) Method for fabricating semiconductor device
JP4519199B2 (en) Wafer recycling method and wafer recycling apparatus
WO2014104009A1 (en) Mask blank substrate processing device, mask blank substrate processing method, mask blank substrate fabrication method, mask blank fabrication method, and transfer mask fabrication method
KR20100047802A (en) Method for polishing both sides of a semiconductor wafer
KR20150108354A (en) Method for manufacturing mask blank substrate, method for manufacturing mask blank and method for manufacturing transfer mask
TW201436973A (en) Rectangular mold-forming substrate
JP5598371B2 (en) Glass substrate polishing method
KR20130143307A (en) Polishing equipment of mask blank substrate and method of polishing for mask blank substrate using the same
JP2005066781A (en) Manufacturing method for glass substrate for electronic device, manufacturing method for mask blank, and manufacturing method for transfer mask
JP4508779B2 (en) Mask blank substrate manufacturing method, mask blank manufacturing method, and exposure mask manufacturing method
KR101334012B1 (en) Manufacturing method of substrate for mask blank, and manufacturing method of mask blank and mask
JP2015214449A (en) Production method of glass substrate and glass substrate
JP2007194556A (en) Method for manufacturing semiconductor wafer
KR101270659B1 (en) Substrate for Blank Mask, Blank Mask and Manufacturing Method Thereof
CN216351768U (en) Regeneration photoetching mask plate based on recovery processing
JP2014008555A (en) Polishing method of glass substrate
JP2008116571A (en) Method of manufacturing substrate for mask blank and method of manufacturing mask blank, and method of manufacturing transfer mask
KR100883511B1 (en) Method and apparatus for polishing semiconductor wafer
US20160168020A1 (en) Method of finishing pre-polished glass substrate surface
JP5687939B2 (en) Mask blank glass substrate manufacturing method, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method
KR20120092482A (en) Method for polishing substrate for mask blank and substrate for mask blank and mask blank
KR20070068901A (en) Method of fabricating blank photo mask substrate for improving planarity degree

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination