KR20070068901A - Method of fabricating blank photo mask substrate for improving planarity degree - Google Patents

Method of fabricating blank photo mask substrate for improving planarity degree Download PDF

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Publication number
KR20070068901A
KR20070068901A KR1020050130990A KR20050130990A KR20070068901A KR 20070068901 A KR20070068901 A KR 20070068901A KR 1020050130990 A KR1020050130990 A KR 1020050130990A KR 20050130990 A KR20050130990 A KR 20050130990A KR 20070068901 A KR20070068901 A KR 20070068901A
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South Korea
Prior art keywords
photomask substrate
substrate
plasma
photo mask
mask substrate
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KR1020050130990A
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Korean (ko)
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원준일
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주식회사 하이닉스반도체
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Priority to KR1020050130990A priority Critical patent/KR20070068901A/en
Publication of KR20070068901A publication Critical patent/KR20070068901A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
    • B24B7/242—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass for plate glass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates

Abstract

A method for manufacturing a blank photomask substrate is provided to enhance the flatness of the photomask substrate by performing firstly a mechanical polishing process on the photomask substrate using slurry and performing secondly a micro polishing process on the photomask substrate using fluorine plasma. A mechanical polishing process is firstly performed on a photomask substrate by using a predetermined slurry(30). A micro polishing process is secondly performed on the photomask substrate by using a predetermined plasma(35). A mask layer is formed on the photomask substrate. Fluorine plasma used as the predetermined plasma.

Description

편평도를 향상시킬 수 있는 블랭크 포토 마스크 기판의 제조방법{Method of fabricating blank photo mask substrate for improving planarity degree}Method of fabricating blank photo mask substrate for improving planarity degree}

도 1은 종래 기술에 의한 블랭크 포토 마스크 기판의 제조방법을 도시한 흐름도이다.1 is a flowchart illustrating a method of manufacturing a blank photomask substrate according to the prior art.

도 2는 본 발명에 의해 편평도를 개선할 수 있는 블랭크 포토 마스크 기판의 제조방법을 도시한 흐름도이다. 2 is a flowchart illustrating a method of manufacturing a blank photo mask substrate capable of improving flatness according to the present invention.

본 발명은 포토 마스크에 관한 것으로, 보다 상세하게는 블랭크(blank) 포토 마스크 기판의 제조방법에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to photo masks and, more particularly, to a method of manufacturing a blank photo mask substrate.

일반적으로, 극 미세패턴(fine pattern)을 형성하여야 하는 반도체 제조 공정에 사용되어지는 포토 마스크 기판의 평균 표면 평탄도는 약 1000nm이다. 일종의 렌즈로 작용할 수 있는 포토 마스크 기판의 표면에 형성되는 패턴의 정밀도가 상기 평탄도의 수백 분의 일인 점을 감안할 때 포토 마스크 기판의 편평도는 매우 중요한 요소이나 간과되고 있다. In general, the average surface flatness of a photomask substrate used in a semiconductor manufacturing process in which a fine pattern must be formed is about 1000 nm. In view of the fact that the precision of the pattern formed on the surface of the photomask substrate, which can act as a kind of lens, is one hundredth of the flatness, the flatness of the photomask substrate is a very important factor, but is overlooked.

도 1은 종래 기술에 의한 블랭크 포토 마스크 기판의 제조방법을 도시한 흐 름도이다.1 is a flowchart illustrating a method of manufacturing a blank photomask substrate according to the prior art.

구체적으로, 포토 마스크 기판을 구성하는 유리 기판의 표면을 슬러리를 사용하여 기계적 연마한다(스텝 10). 이어서, 상기 기계적 연마한 포토 마스크 기판 상에 크롬 및 MoSiN와 같은 마스크층을 코팅하여 블랭크 포토 마스크 기판을 완성한다.(스텝 15) Specifically, the surface of the glass substrate which comprises a photomask substrate is mechanically polished using a slurry (step 10). Subsequently, a mask layer such as chromium and MoSiN is coated on the mechanically polished photomask substrate to complete the blank photomask substrate. (Step 15)

그런데, 종래의 블랭크 포토 마스크 기판의 제조방법은 상기 포토 마스크 기판을 기계적으로만 연마하여 형성하기 때문에 기계 장치의 오차로 인한 표면 굴곡과 광학적으로 거친 표면이 생기게 되는 문제가 있다. However, the conventional blank photomask substrate manufacturing method has a problem in that the surface mask substrate is formed by only mechanically grinding the photomask substrate, resulting in surface curvature and an optically rough surface due to a mechanical error.

따라서, 본 발명이 이루고자 하는 기술적 과제는 표면 굴곡을 완화하여 편평도(평탄도)를 향상시킬 수 있는 블랭크 포토 마스크 기판의 제조방법을 제공하는 데 있다. Accordingly, an object of the present invention is to provide a method of manufacturing a blank photomask substrate that can improve the flatness (flatness) by reducing the surface curvature.

상기 기술적 과제를 달성하기 위하여, 본 발명은 포토 마스크 기판의 표면을 슬러리를 사용하여 기계적 연마하는 것을 포함한다. 이어서, 상기 기계적으로 연마된 포토 마스크 기판의 표면을 플라즈마를 이용하여 미세하게 연마한다. 다음에, 상기 포토 마스크 기판 상에 마스크층을 형성한다. In order to achieve the above technical problem, the present invention includes mechanical polishing the surface of the photomask substrate using a slurry. Subsequently, the surface of the mechanically polished photo mask substrate is finely polished using plasma. Next, a mask layer is formed on the photomask substrate.

상기 플라즈마는 불소 가스를 이용한 플라즈마일 수 있다.The plasma may be a plasma using fluorine gas.

이상과 같이, 본 발명은 포토 마스크 기판을 구성하는 유리 기판의 표면을 슬러리를 사용하여 기계적으로 연마한 후, 포토 마스크 기판을 플라즈마, 예컨대 불소 가스 플라즈마를 이용하여 미세 연마를 수행하여 포토 마스크 기판의 편평도를 개선할 수 있다. As described above, the present invention mechanically polishes the surface of the glass substrate constituting the photomask substrate using a slurry, and then finely polishes the photomask substrate using plasma, for example, fluorine gas plasma, Flatness can be improved.

이하, 첨부도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명한다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명에 의해 편평도를 개선할 수 있는 블랭크 포토 마스크 기판의 제조방법을 도시한 흐름도이다. 2 is a flowchart illustrating a method of manufacturing a blank photo mask substrate capable of improving flatness according to the present invention.

구체적으로, 포토 마스크 기판을 구성하는 유리 기판의 표면을 슬러리를 사용하여 기계적으로 연마한다(스텝 30). 이어서, 상기 기계적으로 연마한 포토 마스크 기판을 플라즈마, 예컨대 불소 가스 플라즈마를 이용하여 처리함으로써 미세 연마를 수행한다. 즉, 포토 마스크 기판의 표면에 플라즈마 처리를 행한다. 이렇게 플라즈마를 이용하여 미세 연마를 수행하면 포토 마스크 기판 표면의 편평도를 개선한다(스텝 35). Specifically, the surface of the glass substrate which comprises a photomask substrate is mechanically polished using a slurry (step 30). Subsequently, fine mechanical polishing is performed by treating the mechanically polished photomask substrate using plasma, such as fluorine gas plasma. That is, plasma processing is performed on the surface of a photomask substrate. In this way, fine polishing is performed using plasma to improve the flatness of the surface of the photomask substrate (step 35).

현재 수준의 건식 식각 장비를 이용하여 포토 마스크 기판을 플라즈마 처리하면 약 10nm 정도 수준으로 편평도를 향상시킬 수 있다. 다시 말해, 종래 기술에 비하여 본 발명은 편평도를 약 100배 향상시킬 수 있다. 이렇게 마스크 기판의 편평도를 개선할 경우 웨이퍼 상에 패턴 전사 시 오차를 대폭적으로 줄일 수 있다. Plasma treatment of the photo mask substrate using current dry etching equipment can improve flatness to about 10 nm. In other words, compared to the prior art, the present invention can improve flatness about 100 times. In this way, when the flatness of the mask substrate is improved, an error in pattern transfer on the wafer can be greatly reduced.

포토 마스크 기판의 표면을 미세 연마한 후, 상기 포토 마스크 기판 상에 에 크롬 및 MoSiN와 같은 마스크층을 코팅하여 블랭크 포토 마스크 기판을 완성한다(스텝 40). After finely polishing the surface of the photomask substrate, a mask layer such as chromium and MoSiN is coated on the photomask substrate to complete the blank photomask substrate (step 40).

상술한 바와 같이, 본 발명은 포토 마스크 기판을 구성하는 유리 기판의 표면을 슬러리를 사용하여 기계적으로 연마한 후, 포토 마스크 기판을 플라즈마, 예컨대 불소 가스 플라즈마를 이용하여 미세 연마를 수행하여 포토 마스크 기판의 편평도를 개선한다. As described above, the present invention mechanically polishes the surface of the glass substrate constituting the photomask substrate using a slurry, and then finely polishes the photomask substrate by using a plasma, for example, a fluorine gas plasma, to form the photomask substrate. To improve the flatness.

현재 수준의 건식 식각 장비를 이용하여 포토 마스크 기판을 플라즈마 처리하면 약 10nm 정도 수준으로 편평도를 종래에 비하여 약 100배 향상시킬 수 있다. 이렇게 포토 마스크 기판의 편평도가 개선되면, 웨이퍼 상에 패턴 전사시 오차를 대폭적으로 줄일 수 있다. Plasma treatment of the photomask substrate using current dry etching equipment can improve the flatness to about 10 nm level by about 100 times compared to the conventional method. If the flatness of the photomask substrate is improved in this way, an error in pattern transfer on the wafer can be greatly reduced.

Claims (2)

포토 마스크 기판의 표면을 슬러리를 사용하여 기계적 연마하는 단계; 및 Mechanically polishing the surface of the photo mask substrate using the slurry; And 상기 기계적으로 연마된 포토 마스크 기판의 표면을 플라즈마를 이용하여 미세하게 연마하는 단계; Finely polishing the surface of the mechanically polished photo mask substrate using plasma; 상기 포토 마스크 기판 상에 마스크층을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 블랭크 포토 마스크 기판의 제조방법. And forming a mask layer on the photo mask substrate. 제1항에 있어서, The method of claim 1, 상기 플라즈마는 불소 가스를 이용한 플라즈마인 것을 특징으로 블랭크 포토 마스크 기판의 제조방법. The plasma is a manufacturing method of a blank photo mask substrate, characterized in that the plasma using a fluorine gas.
KR1020050130990A 2005-12-27 2005-12-27 Method of fabricating blank photo mask substrate for improving planarity degree KR20070068901A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130006310A (en) * 2011-07-08 2013-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130006310A (en) * 2011-07-08 2013-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same

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