KR20130133375A - Method of fabricating semiconductor devices for vertical type light emitting diode for backlight unit - Google Patents

Method of fabricating semiconductor devices for vertical type light emitting diode for backlight unit Download PDF

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Publication number
KR20130133375A
KR20130133375A KR1020120056562A KR20120056562A KR20130133375A KR 20130133375 A KR20130133375 A KR 20130133375A KR 1020120056562 A KR1020120056562 A KR 1020120056562A KR 20120056562 A KR20120056562 A KR 20120056562A KR 20130133375 A KR20130133375 A KR 20130133375A
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KR
South Korea
Prior art keywords
light emitting
emitting diode
semiconductor layer
layer
lens
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KR1020120056562A
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Korean (ko)
Inventor
오세종
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(주)버티클
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Priority to KR1020120056562A priority Critical patent/KR20130133375A/en
Publication of KR20130133375A publication Critical patent/KR20130133375A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention relates to a vertical light emitting diode device suitable for a direct type BLU, a light emitting diode device, and a manufacturing method, and more particularly, to a polygonal chip suitable for a vertical semiconductor device for a direct type BLU and a lens for even light distribution. A light emitting semiconductor device and a method of manufacturing the same.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical light emitting diode device for a direct type BLU capable of realizing faster response than a edge type and split screen driving in a vertical light emitting diode device. To form a metal support layer capable of providing mechanical support on the surface of the light emitting semiconductor element layer. Thereafter, a lens is formed on the substrate to separate the substrate from the light emitting semiconductor element layer and guide the light emitted from the light emitting diode chip positioned on the substrate to a predetermined range of directivity angles. In this case, an object of the present invention is to surround the LED chip in consideration of the distance between the LED chip and the protrusion of the lens.

Description

Vertical light emitting diode device suitable for backlight unit and manufacturing method {METHOD OF FABRICATING SEMICONDUCTOR DEVICES FOR VERTICAL TYPE LIGHT EMITTING DIODE FOR BACKLIGHT UNIT}

The present invention relates to a vertical light emitting diode device suitable for a backlight unit and a manufacturing method, and more particularly, to a vertical light emitting diode device suitable for a backlight unit includes an optimized polygonal chip and a lens for even light distribution. And to a method for producing the same.

The present invention is derived from the research conducted as part of the manufacturing green technology development project of the Small and Medium Business Administration [Task Management Number: SL122764, Task name: Development of polygonal LED chip manufacturing technology for improving the light extraction efficiency].

In general, a semiconductor device having a PN junction and emitting light when a current is injected in a forward direction is called a light emitting diode (LED). A light emitting diode can easily obtain light of a specific frequency desired, and has the advantages of being small, strong in vibration, and low in power consumption compared to a bulb using a filament, and having a long life.

The development of a gallium-nitrogen compound (GaN) based light emitting diode makes it easy to obtain blue light, thereby enabling light of various colors using the light emitting diode, thereby expanding the application range of the light emitting diode.

Light emitting diodes are generally classified into direct type (direct type) and edge type when applied to a TV or monitor backlight, and both types have a rectangular backlight unit (BLU) chip type.

Accordingly, the direct type has a problem of high light consumption but high power consumption, and the edge type has a low light consumption while low power consumption.

Thus, an example of the prior art for lowering the power consumption of the vertical light emitting diode is shown in Korean Patent Registration No. 10-1109321 "Vertical Light Emitting Diode Package and Its Manufacturing Method". According to the prior art as shown in FIG. 1, a vertical light emitting diode without a wire is implemented as a chip-level package type in a wafer level process, and has been derived with the purpose of lowering power consumption.

However, even with the prior art, there is a problem in that the power consumption is tried to be lowered by eliminating the existence of wires causing electrical loss, but the light quantity is not guaranteed.

Korean Patent Registration No. 10-1109321

The present invention is derived to solve the problems of the prior art as described above, in the vertical light emitting diode device for BLU polygon chip suitable for direct type BLU that can implement faster response and screen division driving than edge type BLU, and An object of the present invention is to manufacture a light emitting diode device including a lens for light dispersion.

Specifically, the present invention can provide a mechanical support on the surface of the light emitting semiconductor device layer by forming a light emitting semiconductor device layer for generating light by electrical flow on the substrate in the vertical light emitting diode device for the direct type BLU. To form a metal support layer. Thereafter, a lens is formed on the substrate to separate the substrate from the light emitting semiconductor element layer and guide the light emitted from the light emitting diode chip positioned on the substrate to a predetermined range of directivity angles. In this case, an object of the present invention is to surround the LED chip in consideration of the distance between the LED chip and the protrusion of the lens.

In addition, as shown in the drawings according to an embodiment of the present invention the lens is not only hemispherical but also to provide a vertical light emitting diode device and a manufacturing method which can be formed in at least one of the shape of the rhombus, prism, bead, triangle. The purpose.

In order to achieve the above object, a vertical light emitting diode device according to an embodiment of the present invention is a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer. And a metal support layer formed on the other side of the second semiconductor layer, an electrode positioned on the light emitting side surface of the first semiconductor layer, and a bonding pad positioned on the electrode. In this case, the vertical light emitting diode device suitable for the direct type BLU may take the form of a polygonal or circular columnar shape.

According to an embodiment of the present invention, a vertical LED device includes a flat substrate, a light emitting diode chip (= device) positioned on the substrate, and light emitted from the light emitting diode chip to guide light emitted from the light emitting diode chip to a predetermined range of directing angles. It includes a lens surrounding the diode chip, and includes a lens formed surrounding the light emitting diode chip in consideration of the distance between the light emitting diode chip and the lens protrusion.

The light emitting diode chip has a hexagonal shape, and the lens may be formed in at least one of a rhombus, a prism, a bead, and a triangle in addition to the hemispherical shape.

The present invention relates to a vertical light emitting diode device, a vertical light emitting diode device, and a method of manufacturing the same. There is an effect of increasing the amount of light higher than the vertical light emitting diode.

In addition, by using a smaller number of chips than the conventional rectangular LED chip, it is possible to lower the power consumption and to obtain the beam profile required by the direct type by combining various lenses.

1 is a cross-sectional view of a vertical light emitting diode device for a direct type BLU according to an embodiment of the present invention.
2 is a cross-sectional view of a molding of a vertical light emitting diode device for a direct type BLU according to an embodiment of the present invention.
3 illustrates various embodiments of molding of a vertical LED device incorporating various lenses of the present invention.
4 is a plan view of a vertical light emitting diode device for a direct type BLU according to an embodiment of the present invention.

Other objects and features of the present invention will become apparent from the following description of embodiments with reference to the accompanying drawings.

Preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

However, the present invention is not limited to or limited by the embodiments. Like reference symbols in the drawings denote like elements.

The first semiconductor layer, the active layer, and the second semiconductor layer described in the present invention may be implemented with one or more materials including at least one of GaN, AlGaN, AlGaAs, AlGaInP, GaAsP, GaP, or InGaN.

1 is a cross-sectional view of a vertical light emitting diode device for a direct type BLU according to an embodiment of the present invention.

The light emitting diode device is formed between the first semiconductor layer 110 of the first type, the second semiconductor layer 130 of the second type, and one side of the first semiconductor layer 110 and one side of the second semiconductor layer 130. A third semiconductor layer 140 located on the other side of the second semiconductor layer 130, a reflective layer 142 located on the other side of the third semiconductor layer 140, and a metal support layer. And 150. The metal support layer 150 provides mechanical support to the LED device, and the reflective layer 142 is located between the metal support layer 150 and the third semiconductor layer 140 to generate light from the active layer 120. Reflects the light path to the light emitting side of the first semiconductor layer 110.

Meanwhile, the current blocking layer 141 is positioned in a portion of the region between the reflective layer 142 and the third semiconductor layer 140. The current blocking layer 141 forms a non-ohmic contact that is not an ohmic contact between the third semiconductor layer 140 and the reflective layer 142. The non-ohmic contact may not form a direct path of the current through the current blocking layer 141.

The electrode layer 111 is formed on the light emitting side surface of the first semiconductor layer 110, and includes at least one bonding pad 160 near the boundary line of the electrode layer 111.

In this case, the first semiconductor layer 110 may be an N-type semiconductor layer, for example, an N-type GaN layer. An undulated surface 112 included in the first semiconductor layer 110 is formed on the light emitting surface, and light generated from the active layer 120 does not spread in all directions. In addition, the electrode layer 111 is formed on the other surface of the first semiconductor layer 110 and serves to apply power to the semiconductor device, it may be formed using a metal and a metal compound.

The active layer 120 is formed in contact with one surface of the first semiconductor layer 110, and is formed between the first semiconductor layer 110 and the second semiconductor layer 130 to increase the light emitting efficiency of the light emitting diode semiconductor device. In this case, the active layer 120 may be referred to as a quantum well bonding layer (MQW).

The second semiconductor layer 130 may be a p-type semiconductor layer or an n-type semiconductor layer. For the p-type semiconductor layer, for example, the second semiconductor layer 130 may be a p-type GaN, AlGaN, or InGaN semiconductor layer. The second semiconductor layer 130 may have a polarity opposite to that of the first semiconductor layer 110.

The third semiconductor layer 140 is formed in contact with the other side of the second semiconductor layer 130, and may be, for example, a GaN, AlGaN, or InGaN semiconductor layer. The first semiconductor layer 110, the active layer 120, the second semiconductor layer 130, and the third semiconductor layer 140 may be formed by liquid phase growth (LPE), vapor phase growth (VPE), and organometallic chemistry. It may be formed by a process such as vapor deposition (MOCVD), molecular beam growth (MBE).

The reflective layer 142 is formed between the third semiconductor layer 140 and the metal support layer 150 and reflects light generated in the active layer 120 and traveling backward. In addition, the reflective layer 142 may include at least one material of Ag, Cu, Pd, Al, Pt, Ni, Au, ITO, TCO, ZnO. The current blocking layer 141 (CBL) between the reflective layer 142 and the third semiconductor layer 140 may be disposed to be self-aligned with the electrode layer 111. The number, size, or spacing of the current blocking layer 141 may be appropriately adjusted in consideration of current spreading characteristics.

The electrode layer 111 and the current blocking layer 141 are self-aligned so that the electrode layer 111 and the metal support layer 150 or between the electrode layer 111 and the second electrode layer (not shown, the metal support layer 150 and the reflective layer 142). Or a path of a current flowing between the reflective layer 150 and the third semiconductor layer 140 is not concentrated in the vertical direction but spreads in the horizontal direction. have.

In this case, the current blocking layer 141 may include at least one of In 2 O 3 , ZnO, SiO 2 , Al 2 O 3 , SiN, AlN, and Si 3 N 4 .

The metal support layer 150 is a layer providing mechanical support of the semiconductor device. The metal support layer 150 is formed on one surface of the third semiconductor layer 140, and has a high electrical conductivity and thermal conductivity and is relatively high in mechanical strength. It consists of a compound.

In addition, the metal support layer 150 may be formed through an electroplating method, and in some embodiments, a flexible copper layer (not shown) having a low density and alleviating stress, a high density and strength, and mechanical properties It may also consist of two layers of a hard copper layer (not shown) that provides mechanical support. The flexible copper layer may be formed by a plating method having a slower plating speed than the hard copper layer, and may provide a means for relieving stress due to the thickness of the metal support layer 150. Examples of the plating method of the flexible copper layer include a sulfate-based plating method, and the possible plating speed is 3 to 5 um / hour. An example of the plating method of the hard copper layer is a metal alloy-based plating method including tin (Sn) and iron (Fe), and the possible plating speed is 20 um / hour.

The bonding pad 160 is formed on the other surface of the first semiconductor layer 110 and is positioned at the interface of the electrode layer 111 to serve to apply power to the semiconductor device. The bonding pad 160 may be formed using a metal and a metal compound. have.

2 is a cross-sectional view of a molding of a vertical light emitting diode device for a direct type BLU according to an embodiment of the present invention.

The light emitting diode device for the direct type BLU includes a flat substrate 220, a light emitting diode chip 210 (= element) positioned on the substrate 220, and a lens 230 for adjusting a beam profile.

In this case, the lens 230 is formed to surround the LED chip with a distance H between the LED chip 210 and the largest protrusion of the lens 230. In addition, the lens 230 is formed surrounding the light emitting diode chip 210 on the substrate 220 to guide the light emitted from the light emitting diode chip 210 to a predetermined range of directing angles. At this time, the radius of curvature R of the lens 230 may be designed for the purpose of adjusting the path of the beam so that the beam is concentrated in the center according to the ratio with H. For example, the trajectory of the beam generated from the light emitting diode chip 210 can be centralized by appropriately selecting the ratio of H / R.

3 illustrates various embodiments of molding of a light emitting diode device for a direct type BLU incorporating various lenses of the present invention.

In various embodiments of the molding of a light emitting diode device for a direct BLU, in addition to the hemispherical lens 230, the lens has a triangle (a) shape, rhombus shape (b) shape, bead shape (c) shape, prism It is possible to form at least one or more of the shape of the shape (d) and the shape of the right triangle (e) symmetrical about the light emitting diode chip 210 with the center line. In addition to the shape of the lens 230 may be applied in various forms. Accordingly, various beam profiles may be obtained by changing the refractive index of the lens 230.

In addition, the hexagonal light emitting diode chip 210 may distribute even light through the lens 230 as compared with the conventional rectangular LED chip, which is advantageous in the direct type BLU structure.

4 is a plan view of a vertical light emitting diode device for a direct type BLU according to an embodiment of the present invention.

Electrodes 421, 422, 423 and bonding pads 411, 412, 413 are disposed on the light emitting side surfaces 431, 432, 433. At this time, the bonding pads 411 of the semiconductor device 430 are formed outside the light emitting side surface 431.

In addition, bonding pads 412 may be formed at the inner edge of the electrode 422 at the light emitting side surface 432. Also, at least two bonding pads 413 may be formed at the inner edge of the electrode 423 at the light emitting side surface 433. In this case, at least two bonding pads 413 may be formed to be symmetrical with each other through the center line of the electrode 423.

Accordingly, bonding pads 411 are formed on the outer side of the light emitting side surface 431, and bonding pads 412 and 413 are formed on the inner edges of the light emitting side surfaces 422 and 423, thereby providing the vertical light emitting diode element. Since the amount of light emitted from the central area of the light emitting side surfaces 431, 432, and 433 is emitted through the bonding pads 411, 412, and 413 or only through a minimum amount, the extraction efficiency of the amount of emitted light does not decrease. .

As described above, the present invention has been described by specific embodiments such as specific components and the like. For those skilled in the art, various modifications and variations are possible from these descriptions.

Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the following claims, belong to the scope of the present invention .

110: first semiconductor layer
120: active layer
130: second semiconductor layer
140: third semiconductor layer
150: metal support layer
160: bonding pad
111: electrode layer
141: reflective layer

Claims (5)

A vertical light emitting diode device for a backlight unit,
A first semiconductor layer of a first type;
A second semiconductor layer of a second type opposite to the first type;
An active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light by electric flow; And
A metal support layer on the other side of the second semiconductor layer to provide mechanical support;
/ RTI >
An electrode layer formed on the light emitting side surface of the first semiconductor layer;
At least one bonding pad formed near a boundary of the electrode layer;
Lt; / RTI >
The light emitting diode device is a vertical light emitting diode device having a polygonal or circular columnar shape. The method of claim 1,
A current blocking layer positioned between the metal support layer and the second semiconductor layer;
Vertical light emitting diode device further comprising. Flat substrates;
A light emitting diode chip on the substrate; And
A lens surrounding the light emitting diode chip on the substrate to guide light emitted from the light emitting diode chip to a predetermined range of directing angles;
Lt; / RTI >
And a lens formed around the light emitting diode chip in consideration of a distance between the light emitting diode chip and the protrusion of the lens. The method of claim 3,
The lens is a vertical type light emitting diode device for a backlight unit that can be formed in at least one of a rhombus shape, a prism shape, a bead shape, a triangle, in addition to the hemispherical shape. The method of claim 3,
The light emitting diode chip is a vertical light emitting diode for a backlight unit taking the form of a hexagon.
KR1020120056562A 2012-05-29 2012-05-29 Method of fabricating semiconductor devices for vertical type light emitting diode for backlight unit KR20130133375A (en)

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KR1020120056562A KR20130133375A (en) 2012-05-29 2012-05-29 Method of fabricating semiconductor devices for vertical type light emitting diode for backlight unit

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Application Number Priority Date Filing Date Title
KR1020120056562A KR20130133375A (en) 2012-05-29 2012-05-29 Method of fabricating semiconductor devices for vertical type light emitting diode for backlight unit

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112825342A (en) * 2019-11-20 2021-05-21 隆达电子股份有限公司 Light emitting diode device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112825342A (en) * 2019-11-20 2021-05-21 隆达电子股份有限公司 Light emitting diode device

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