KR20130126458A - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR20130126458A
KR20130126458A KR1020130005786A KR20130005786A KR20130126458A KR 20130126458 A KR20130126458 A KR 20130126458A KR 1020130005786 A KR1020130005786 A KR 1020130005786A KR 20130005786 A KR20130005786 A KR 20130005786A KR 20130126458 A KR20130126458 A KR 20130126458A
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KR
South Korea
Prior art keywords
faraday shield
plasma
gas
processing apparatus
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020130005786A
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English (en)
Korean (ko)
Inventor
유사꾸 삿까
료지 니시오
다다요시 가와구찌
쯔또무 데쯔까
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
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Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20130126458A publication Critical patent/KR20130126458A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020130005786A 2012-05-11 2013-01-18 플라즈마 처리 장치 Ceased KR20130126458A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2012-109063 2012-05-11
JP2012109063 2012-05-11
JP2012209582A JP2013254723A (ja) 2012-05-11 2012-09-24 プラズマ処理装置
JPJP-P-2012-209582 2012-09-24

Publications (1)

Publication Number Publication Date
KR20130126458A true KR20130126458A (ko) 2013-11-20

Family

ID=49547716

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130005786A Ceased KR20130126458A (ko) 2012-05-11 2013-01-18 플라즈마 처리 장치

Country Status (3)

Country Link
US (1) US20130299091A1 (enExample)
JP (1) JP2013254723A (enExample)
KR (1) KR20130126458A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5617817B2 (ja) * 2011-10-27 2014-11-05 パナソニック株式会社 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法
JP2015138602A (ja) * 2014-01-21 2015-07-30 株式会社アルバック プラズマ処理用整合器、プラズマ処理装置、および、プラズマ処理用整合器の駆動方法
US20160118284A1 (en) * 2014-10-22 2016-04-28 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus
JP2017045916A (ja) * 2015-08-28 2017-03-02 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
GB201603581D0 (en) * 2016-03-01 2016-04-13 Spts Technologies Ltd Plasma processing apparatus
CN105931940B (zh) 2016-06-01 2018-09-21 京东方科技集团股份有限公司 一种电感耦合等离子体装置
TWI733021B (zh) 2017-05-15 2021-07-11 美商應用材料股份有限公司 電漿源組件、處理腔室與處理基板的方法
JP7069319B2 (ja) 2017-12-15 2022-05-17 アプライド マテリアルズ インコーポレイテッド 垂直プラズマ源からの改良されたプラズマ暴露のために成形された電極
CN108121004B (zh) * 2018-01-05 2019-05-24 北京航空航天大学 法拉第探针
CN110660635B (zh) * 2018-06-29 2022-08-16 北京北方华创微电子装备有限公司 工艺腔室和半导体处理设备
CN110416053B (zh) * 2019-07-30 2021-03-16 江苏鲁汶仪器有限公司 一种电感耦合等离子体处理系统
WO2022264384A1 (ja) * 2021-06-17 2022-12-22 昭和電工マテリアルズ株式会社 リチウムイオン二次電池用負極材、リチウムイオン二次電池用負極及びリチウムイオン二次電池
JP7760389B2 (ja) 2022-01-24 2025-10-27 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JP2013254723A (ja) 2013-12-19
US20130299091A1 (en) 2013-11-14

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