KR20130055752A - Apparatus for forming cigs layer - Google Patents

Apparatus for forming cigs layer Download PDF

Info

Publication number
KR20130055752A
KR20130055752A KR1020110121342A KR20110121342A KR20130055752A KR 20130055752 A KR20130055752 A KR 20130055752A KR 1020110121342 A KR1020110121342 A KR 1020110121342A KR 20110121342 A KR20110121342 A KR 20110121342A KR 20130055752 A KR20130055752 A KR 20130055752A
Authority
KR
South Korea
Prior art keywords
chamber
forming apparatus
cigs layer
layer forming
door
Prior art date
Application number
KR1020110121342A
Other languages
Korean (ko)
Inventor
이경호
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to KR1020110121342A priority Critical patent/KR20130055752A/en
Publication of KR20130055752A publication Critical patent/KR20130055752A/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: An apparatus for forming a CIGS layer is provided to uniformly apply pressure to the inner side of a body by forming the body of a cylindrical shape in a chamber. CONSTITUTION: A body(110) of a chamber(110a) includes a cylindrical outer body(111) and an inner body. A gap is formed between the inner body and the inner side of the outer body. A plurality of support ribs(116) are formed on the outer side of the inner body. A substrate(50) loaded on a boat(120) is loaded on the chamber. A plurality of heaters heat the atmospheric gases of the chamber. A door(140) is rotatably installed on one side of the body and opens and closes the chamber.

Description

ＣＩＧＳ층 형성장치 {APPARATUS FOR FORMING CIGS LAYER}CIS layer forming apparatus {APPARATUS FOR FORMING CIGS LAYER}

본 발명은 CIGS층 형성장치에 관한 것이다.The present invention relates to a CIGS layer forming apparatus.

오늘날, 고갈되어 가는 화석 연료에 대한 의존도를 줄이기 위해, 고갈될 염려가 없을 뿐만 아니라 친환경적인 태양에너지를 활용하는 태양전지(Solar Cell)에 대한 연구 개발이 활발히 진행 중이다.Today, in order to reduce the dependence on depleted fossil fuels, research and development on active solar cells that utilize not only the risk of depletion but also use environmentally friendly solar energy are in progress.

이러한 연구 개발의 일환으로, 태양광의 흡수율이 높고, 태양광 또는 방사선에 대한 열화 현상이 적으며, 박막화가 가능하고, 제작상 재료비를 절감할 수 있는 CIGS{Cu(In1-xGax)Se2} 층이 형성된 박막형 태양전지가 개발되었다.As part of this research and development, CIGS {Cu (In1-xGax) Se 2 } layer which has high absorption rate of solar light, little degradation of sunlight or radiation, thin film and low material cost. The formed thin film solar cell has been developed.

박막형 태양전지는 유리 등의 기판, 기판 상에 형성된 금속층으로 이루어진 (+)극인 전극층, 전극층 상에 형성되며 광을 흡수하는 p형의 CIGS층, CIGS층 상에 형성된 n형의 버퍼층 및 버퍼층 상에 형성된 (-)극인 투명 전극층을 포함하는 다층 적층 구조이다.Thin-film solar cells include a substrate such as glass, an electrode layer which is a positive electrode made of a metal layer formed on the substrate, a p-type CIGS layer formed on the electrode layer to absorb light, an n-type buffer layer and a buffer layer formed on the CIGS layer. It is a multilayer laminated structure containing the transparent electrode layer which is the formed (-) pole.

그리하여, 수광부인 투명 전극층을 통하여 태양광이 입사되면, p-n 접합 부근에서는 대략 1.04 eV 의 밴드갭 에너지를 갖는 여기된 한 쌍의 전자 및 정공이 생성된다. 그리고, 여기된 전자와 정공은 확산에 의해 p-n 접합부에 도달하고, 접합부의 내부 전계에 의해 전자가 n 영역에, 정공이 p 영역에 집합하여 분리된다.Thus, when sunlight enters through the transparent electrode layer serving as the light receiving portion, a pair of excited electrons and holes having a bandgap energy of approximately 1.04 eV are generated near the p-n junction. The excited electrons and holes reach the p-n junction by diffusion, and electrons are collected in the n region and holes are separated in the p region by the internal electric field of the junction.

그러면, n 영역은 마이너스로 대전되고, p 영역은 플러스로 대전되며, 각 영역에 형성된 전극 간에는 전위차가 생긴다. 그리고, 전위차를 기전력으로 하여 각 전극 사이를 도선으로 연결하면 광전류가 얻어진다. 이것이 태양전지의 원리이다.Then, the n region is negatively charged, the p region is positively charged, and a potential difference occurs between the electrodes formed in each region. A photocurrent is obtained when the potential difference is used as an electromotive force and the respective electrodes are connected by a lead wire. This is the principle of solar cells.

박막형 태양전지의 CIGS층을 형성하는 방법은, 기판에 형성된 전극층 상에 구리, 인듐, 갈륨의 원소를 적정 비율로 진공 스퍼터링하여 전구체막을 형성하는 전구체막 형성 공정과, 증착된 전구체막에 셀렌화 수소(H2Se) 기체를 흘려주면서 기판에 온도를 가하게 되는 셀렌화(selenization) 공정을 거친다. 이러한 일련의 공정에 따라, 구리(Cu), 인듐(In), 갈륨(Ga) 및 셀레늄(Se) 원소의 적정 조성 비율을 갖는 CIGS층을 형성할 수 있게 된다.A method of forming a CIGS layer of a thin film solar cell includes a precursor film forming step of forming a precursor film by vacuum sputtering an element of copper, indium, and gallium at an appropriate ratio on an electrode layer formed on a substrate, and hydrogen selenide on the deposited precursor film. (H 2 Se) is subjected to a selenization process to apply a temperature to the substrate while flowing the gas. According to this series of processes, it is possible to form a CIGS layer having a proper composition ratio of elements of copper (Cu), indium (In), gallium (Ga) and selenium (Se).

이러한 셀렌화 공정은 전구체막이 형성된 기판을 밀폐된 챔버에 로딩시키고, 챔버를 불활성가스로 치환한 다음, 챔버에 처리가스인 셀렌화 수소(H2Se)을 도입한 후, 챔버를 일정 온도로 승온시켜 일정 시간 유지하여, 셀렌화된 CIGS층을 형성하는 공정이다.In this selenization process, the substrate on which the precursor film is formed is loaded into a closed chamber, the chamber is replaced with an inert gas, hydrogen selenide (H 2 Se) as a process gas is introduced into the chamber, For a predetermined time to form a selenized CIGS layer.

일반적으로, CIGS층 형성장치는 기판이 처리되는 공간인 챔버를 형성하는 본체를 포함하고, 상기 챔버에 로딩된 상기 기판은 500℃ 이상의 고온에서 처리된다.In general, the CIGS layer forming apparatus includes a main body for forming a chamber, which is a space in which a substrate is processed, and the substrate loaded in the chamber is processed at a high temperature of 500 ° C or higher.

그런데, 종래의 CIGS층 형성장치의 본체는 대략 육면체 형상으로 형성되므로, 본체의 평면 부위와 모서리 부위에 작용하는 압력이 상호 상이하여 본체가 용이하게 변형되는 단점이 있었다.However, since the main body of the conventional CIGS layer forming apparatus is formed in a substantially hexahedral shape, there is a disadvantage that the main body is easily deformed because the pressures acting on the flat portion and the corner portion of the main body are different from each other.

CIGS층 형성장치와 관련된 기술은 한국공개특허공보 10-2007-0097472호 등에 개시되어 있다.The technology related to the CIGS layer forming apparatus is disclosed in Korea Patent Publication No. 10-2007-0097472.

본 발명은 상기와 같은 종래 기술의 문제점을 해소하기 위하여 안출된 것으로, 본 발명의 목적은 내구성을 향상시킬 수 있는 CIGS층 형성장치를 제공함에 있다.The present invention has been made to solve the problems of the prior art as described above, an object of the present invention to provide a CIGS layer forming apparatus that can improve the durability.

상기 목적을 달성하기 위한 본 발명에 따른 CIGS층 형성장치는, 일측면은 개방되고, 내부에는 복수개의 기판이 로딩되어 처리되는 공간인 챔버가 형성된 원통형상의 본체; 상기 본체에 지지되어 상기 챔버에 위치되며 상기 챔버의 분위기 가스를 가열하는 복수의 히터; 상기 본체의 일측면에 회전가능하게 설치되어 상기 챔버를 개폐하는 도어를 포함한다.CIGS layer forming apparatus according to the present invention for achieving the above object, the one side is open, a cylindrical body formed with a chamber which is a space in which a plurality of substrates are loaded and processed; A plurality of heaters supported by the main body and positioned in the chamber to heat the atmosphere gas of the chamber; It is rotatably installed on one side of the main body includes a door for opening and closing the chamber.

본 발명에 따른 CIGS층 형성장치는 챔버를 형성하는 본체가 원통형상으로 형성된다. 그러면, 본체의 내면에 작용하는 압력이 균일하므로, 내구성이 향상되는 효과가 있다.In the CIGS layer forming apparatus according to the present invention, the main body forming the chamber is formed in a cylindrical shape. Then, since the pressure acting on the inner surface of the main body is uniform, there is an effect that the durability is improved.

도 1은 본 발명의 일 실시예에 따른 CIGS층 형성장치의 사시도.
도 2는 도 1의 일부 절개 사시도로서, 도어가 개방된 상태를 보인 사시도.
도 3은 도 1의 "A"부 확대도.1 is a perspective view of a CIGS layer forming apparatus according to an embodiment of the present invention.
Figure 2 is a partially cutaway perspective view of Figure 1, a perspective view showing the door open.
3 is an enlarged view of a portion "A" in FIG.

후술하는 본 발명에 대한 상세한 설명은, 본 발명이 실시될 수 있는 특정 실시예를 예시하여 도시한 첨부 도면을 참조한다. 이들 실시예는 당업자가 본 발명을 실시할 수 있도록 충분히 상세하게 설명된다. 본 발명의 다양한 실시예는 상호 다르지만 상호 배타적일 필요는 없음이 이해되어야 한다. 예를 들어, 여기에 기재되어 있는 특정 형상, 특정 구조 및 특성은 일 실시예와 관련하여 본 발명의 정신 및 범위를 벗어나지 않으면서 다른 실시예로 구현될 수 있다. 또한, 각각의 개시된 실시예 내의 개별 구성요소의 위치 또는 배치는 본 발명의 정신 및 범위를 벗어나지 않으면서 변경될 수 있음이 이해되어야 한다. 따라서, 후술하는 상세한 설명은 한정적인 의미가 아니며, 본 발명의 범위는, 적절하게 설명된다면, 그 청구항들이 주장하는 것과 균등한 모든 범위와 더불어 첨부된 청구항에 의해서만 한정된다. 도면에 도시된 실시예들의 길이, 면적, 두께 및 형태는, 편의상, 과장되어 표현될 수도 있다.DETAILED DESCRIPTION OF THE INVENTION The following detailed description of the invention refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are mutually exclusive, but need not be mutually exclusive. For example, certain features, specific structures, and features described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with one embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled. The length, area, thickness, and shape of the embodiments shown in the drawings may be exaggerated for convenience.

이하, 첨부된 도면을 참조하여 본 발명의 일 실시예에 따른 CIGS층 형성장치를 상세히 설명한다.Hereinafter, a CIGS layer forming apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 일 실시예에 따른 CIGS층 형성장치의 사시도이고, 도 2는 도 1의 일부 절개 사시도로서, 도어가 개방된 상태를 보인 사시도이다.1 is a perspective view of a CIGS layer forming apparatus according to an embodiment of the present invention, Figure 2 is a partially cutaway perspective view of Figure 1, a perspective view showing the door is opened.

도시된 바와 같이, 본 실시예에 따른 CIGS층 형성장치는 유리 등의 기판(50)이 로딩되어 처리되는 밀폐된 공간인 챔버(110a)를 제공하는 스테인리스 스틸로 형성된 본체(110)를 포함한다. 본체(110)는 일측면이 개방된 원통형으로 형성되어 길이방향이 본체(110)가 설치되는 바닥 등과 수평을 이루면서 설치되며, 외부본체(111)와 내부본체(115)를 포함한다.As shown, the CIGS layer forming apparatus according to the present embodiment includes a body 110 formed of stainless steel that provides a chamber 110a, which is an enclosed space in which a substrate 50 such as glass is loaded and processed. The main body 110 is formed in a cylindrical shape with one side open, and the longitudinal direction is installed to be horizontal with the bottom, etc. on which the main body 110 is installed, and includes an outer main body 111 and an inner main body 115.

외부본체(111)는 일측면이 개방된 원통형상으로 형성되고, 내부본체(115)도 일측면이 개방된 원통형상으로 형성되어 외부본체(111)의 내부에 설치된다. 이때, 외부본체(111)와 내부본체(115)는 상호 상이한 직경으로 형성되어 동심을 이루면서 배치되며, 외부본체(111)의 내주면과 내부본체(115)의 내주면은 간격을 가진다.The outer body 111 is formed in a cylindrical shape with one side open, and the inner body 115 is also formed in a cylindrical shape with one side open, and is installed inside the outer body 111. At this time, the outer body 111 and the inner body 115 are formed with different diameters and arranged concentrically, the inner circumferential surface of the outer body 111 and the inner circumferential surface of the inner body 115 have a gap.

내부본체(115)의 외주면에는 내부본체(115)의 길이방향을 따라 복수의 지지리브(116)가 형성된다. 지지리브(116)는 내부본체(115)가 외부본체(111)와 간격을 가지면서 설치될 수 있도록 지지한다. 지지리브(116)는 외부본체(111)의 내주면에 형성될 수도 있다.On the outer circumferential surface of the inner body 115, a plurality of support ribs 116 are formed along the longitudinal direction of the inner body 115. The support rib 116 supports the inner body 115 to be installed at a distance from the outer body 111. The support ribs 116 may be formed on the inner circumferential surface of the outer body 111.

내부본체(115)의 개방된 일측면측 외주면에는 외부본체(111)와 내부본체(115) 사이의 공간을 밀폐하는 밀폐테(117)가 형성된다. 이때, 밀폐테(117)와 외부본체(111)의 일단면(一端面) 사이에는 실링부재(미도시)가 개재된다. 밀폐테(117)는 외부본체(111)의 일측면측 외주면에 형성될 수 있다.An open one side surface outer peripheral surface of the inner body 115 is formed with a sealing frame 117 for sealing the space between the outer body 111 and the inner body 115. At this time, a sealing member (not shown) is interposed between the sealing frame 117 and one end surface of the outer body 111. The sealing frame 117 may be formed on one side surface outer circumferential surface of the outer body 111.

외부본체(111)와 내부본체(115) 사이의 공간(110b)에는 질소 가스가 유입될 수 있다. 질소 가스는 챔버(110a)로 유입된 후술할 셀렌화 수소(H2Se)가 내부본체(111)와 외부본체(115) 사이로 누설되었을 때, 셀렌화 수소를 희석시킨다.Nitrogen gas may be introduced into the space 110b between the outer body 111 and the inner body 115. Nitrogen gas dilutes hydrogen selenide when hydrogen selenide (H 2 Se) to be introduced into the chamber 110a leaks between the inner body 111 and the outer body 115.

기판(50)은 복수개가 상호 간격을 가지면서 보트(120)에 적재 저장되어 기립 설치된다. 그리고, 기판(50)은 보트(120)에 적재 저장된 상태로 챔버(110a)에 로딩되거나, 챔버(110a)로부터 언로딩된다.The plurality of substrates 50 are installed in the boat 120 while standing in a plurality of spaced apart from each other. In addition, the substrate 50 may be loaded into or unloaded from the chamber 110a in a state of being stored and stored in the boat 120.

본 실시예에 따른 CIGS층 형성장치는 복수의 보트(120)가 챔버(110a)에 로딩되며, 내부본체(115)의 내주면에는 보트(120)의 하면 테두리부측을 지지하는 한쌍의 지지레일(118)이 상호 대향되게 형성된다. 그리고, 보트(120)를 지지레일(118)을 따라 용이하게 이동할 수 있도록 보트(120)의 하면 테두리부측에는 지지레일(118)과 접촉하는 복수의 롤러(121)가 설치된다.In the CIGS layer forming apparatus according to the present embodiment, a plurality of boats 120 are loaded in the chamber 110a, and a pair of support rails 118 supporting the lower edge portion of the boat 120 on the inner circumferential surface of the inner body 115. ) Are formed to face each other. In addition, a plurality of rollers 121 contacting the support rails 118 are installed on the lower edge portion of the boat 120 so that the boat 120 can be easily moved along the support rails 118.

내부본체(115)에는 보트(120)를 감싸는 형태로 복수의 히터(미도시)가 지지 설치된다. 상기 히터는 챔버(110a)에 위치되어 챔버(110a)의 분위기 가스를 가열한다.The inner body 115 is provided to support a plurality of heaters (not shown) in a form surrounding the boat 120. The heater is located in the chamber 110a to heat the atmosphere gas of the chamber 110a.

외부본체(111)의 개방된 일측면에는, 밀폐테(117)와 접촉하여 챔버(110a)를 개폐하는 도어(140)가 회전가능하게 설치된다. 도어(140)는 실린더(145)에 의하여 개폐된다.On one open side of the outer body 111, a door 140 for opening and closing the chamber 110a in contact with the sealing frame 117 is rotatably installed. The door 140 is opened and closed by the cylinder 145.

챔버(110a)를 안정되게 밀폐시키기 위하여, 도어(140)와 밀폐테(117) 사이에는 실링부재(150)가 설치된다. 실링부재(150)는 도어(140)와 밀폐테(117) 중에서 적어도 어느 하나의 부위에 설치되는 것이 바람직하다.In order to stably seal the chamber 110a, a sealing member 150 is installed between the door 140 and the sealing frame 117. The sealing member 150 is preferably installed in at least one of the door 140 and the sealing frame 117.

그리하여, 전극층과 적정 원소 비율로 형성된 구리, 인듐, 갈륨으로 이루어진 전구체막이 형성된 기판(50)을 보트(120)에 적재 저장한 다음, 로봇(미도시)을 이용하여 보트(120)를 지지레일(118)에 지지시킨다. 그 후, 도어(140)로 챔버(110a)를 밀폐하고, 챔버(110a)에 질소 가스를 유입한 다음, 셀렌화 가스((H2Se)를 주입하여 소정 온도에서 CIGS층을 형성하고, CIGS층 형성한 다음에는 또 다른 소정 온도에서 황화 가스(H2S)를 주입하여 기판(50)에 형성된 CIGS층을 처리한다.Thus, the substrate 50 on which the precursor layer formed of copper, indium, and gallium formed at an appropriate element ratio is formed is stored in the boat 120, and then the boat 120 is supported by a support rail (not shown). 118). Thereafter, the chamber 110a is sealed by the door 140, nitrogen gas is introduced into the chamber 110a, and selenization gas ((H 2 Se)) is injected to form a CIGS layer at a predetermined temperature. After forming the layer, sulfide gas (H 2 S) is injected at another predetermined temperature to treat the CIGS layer formed on the substrate 50.

외부본체(111)의 개방된 일면측 외주면에는 도어(140)를 외부본체(111)측으로 당겨서 도어(140)를 밀폐테(117)에 밀착시키기 위한 복수의 실린더(160)가 설치된다.A plurality of cylinders 160 are installed on one open side outer circumferential surface of the outer body 111 to pull the door 140 toward the outer body 111 to close the door 140 to the sealing frame 117.

실린더(160)에 대하여 도 1 및 도 3을 참조하여 설명한다. 도 3은 도 1의 "A"부 확대도이다.The cylinder 160 will be described with reference to FIGS. 1 and 3. 3 is an enlarged view of a portion “A” of FIG. 1.

도시된 바와 같이, 실린더(160)는 외부본체(111)의 외주면을 따라 등간격으로 설치된다. 실린더(160)는 직선운동하는 플런저(161)를 가지며, 플런저(161)의 단부에는 플런저(161)와 함께 직선운동하면서 본체(110)의 외측을 향하는 도어(140)의 면에 걸리는 후크(163)가 설치된다. 후크(163)는 플런저(161)에 회전가능하게 설치된다.As shown, the cylinder 160 is installed at equal intervals along the outer circumferential surface of the outer body 111. The cylinder 160 has a plunger 161 that linearly moves, and a hook 163 that is caught on the surface of the door 140 toward the outside of the main body 110 while linearly moving together with the plunger 161 at the end of the plunger 161. ) Is installed. The hook 163 is rotatably mounted to the plunger 161.

즉, 도어(140)가 접촉테(117)에 접촉하면, 플런저(161)는 실린더(160)의 내측으로 직선운동한다. 그러면, 후크(163)가 플런저(161)와 함께 운동하면서, 도어(140)를 본체(110)측으로 당기고, 이로 인해 도어(140)가 밀폐테(117)에 밀착된다.That is, when the door 140 contacts the contact frame 117, the plunger 161 linearly moves inwardly of the cylinder 160. Then, while the hook 163 moves together with the plunger 161, the door 140 is pulled toward the main body 110, whereby the door 140 is in close contact with the sealing frame 117.

챔버(110a)에 로딩된 기판(50)의 처리가 완료되면, 플런저(161)는 실린더(160)의 외측으로 직선운동하여, 후크(163)를 도어(140)와 이격시킨다. 이러한 상태에서 실린더(145)를 작동시켜 도어(140)를 회전시키면, 챔버(110a)가 개방된다.When the processing of the substrate 50 loaded in the chamber 110a is completed, the plunger 161 linearly moves outward of the cylinder 160 to space the hook 163 from the door 140. When the door 140 is rotated by operating the cylinder 145 in this state, the chamber 110a is opened.

후크(163)가 플런저(161)에 회전가능하게 설치되므로, 후크(163)가 소정이상 회전된 후 최초의 상태로 복귀되지 않으면, 플런저(161)가 직선운동하여도 후크(163)가 도어(140)에 걸리지 않을 수 있다.Since the hook 163 is rotatably installed in the plunger 161, if the hook 163 does not return to the original state after the hook 163 is rotated more than a predetermined time, the hook 163 is still in the door (even if the plunger 161 is linearly moved). 140) may not be caught.

이를 방지하기 위하여, 일측은 플런저(161)에 지지되고 타측은 후크(163)에 지지되어 후크(163)를 지지하는 탄성부재(165)가 설치된다. 탄성부재(165)는 후크(163)가 소정이상 회전하는 것을 방지함과 동시에 후크(163)가 최초의 상태로 복귀되도록 지지한다.In order to prevent this, one side is supported by the plunger 161 and the other side is supported by the hook 163 is provided with an elastic member 165 supporting the hook 163. The elastic member 165 prevents the hook 163 from rotating more than a predetermined time and supports the hook 163 to be returned to its initial state.

본 실시예에 따른 ＣＩＧＳ층 형성장치는 본체(110)가 원통형상으로 형성되므로, 본체(110)의 내면에 작용하는 압력이 균일하다. 따라서, 내구성이 향상된다.In the CIS layer forming apparatus according to the present embodiment, since the main body 110 is formed in a cylindrical shape, the pressure acting on the inner surface of the main body 110 is uniform. Therefore, durability is improved.

본 발명은 상술한 바와 같이 바람직한 실시예를 예로 들어 도시하여 설명하였으나, 상기 실시예에 한정되지 아니하며 본 발명의 정신을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변형과 변경이 가능하다. 그러한 변형예 및 변경예는 본 발명과 첨부된 특허청구범위의 범위 내에 속하는 것으로 보아야 한다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, Various variations and modifications are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

110: 본체
111: 외부본체
115: 내부본체
120: 보트
140: 도어110:
111: external body
115: internal body
120: boat
140: door

Claims (9)

일측면은 개방되고, 내부에는 복수개의 기판이 로딩되어 처리되는 공간인 챔버가 형성된 원통형상의 본체;
상기 본체에 지지되어 상기 챔버에 위치되며 상기 챔버의 분위기 가스를 가열하는 복수의 히터;
상기 본체의 일측면에 회전가능하게 설치되어 상기 챔버를 개폐하는 도어를 포함하는 것을 특징으로 하는 CIGS층 형성장치.A cylindrical body having one side open and a chamber formed therein, wherein the chamber is a space in which a plurality of substrates are loaded and processed;
A plurality of heaters supported by the main body and positioned in the chamber to heat the atmosphere gas of the chamber;
CIGS layer forming apparatus characterized in that it comprises a door rotatably installed on one side of the main body to open and close the chamber. 제1항에 있어서,
상기 본체는 일측면이 개방된 원통형상의 외부본체와, 일측면이 개방되어 상기 챔버를 형성하고 상기 외부본체의 내부에 배치되며 상기 외부본체와 동심을 이루면서 상기 외부본체의 내주면과 간격을 가지는 내부본체를 포함하는 것을 특징으로 하는 CIGS층 형성장치.The method of claim 1,
The main body has a cylindrical outer body having one side open and an inner body having one side open to form the chamber and disposed inside the outer body and having a distance from the inner circumferential surface of the outer body while being concentric with the outer body. CIGS layer forming apparatus comprising a. 제2항에 있어서,
상기 외부본체의 내주면과 상기 내부본체의 내주면 중, 어느 하나의 부위에는 상기 외부본체의 내부에 설치된 상기 내부본체를 지지하는 복수의 지지리브가 형성된 것을 특징으로 하는 CIGS층 형성장치.The method of claim 2,
CIGS layer forming apparatus, characterized in that a plurality of support ribs for supporting the inner body installed inside the outer body of any one of the inner peripheral surface of the outer body and the inner peripheral surface of the inner body. 제3항에 있어서,
상기 외부본체의 일측면측 외주면과 상기 내부본체의 일측면측 외주면 중, 어느 하나의 부위에는 상기 외부본체와 상기 내부본체 사이의 공간을 밀폐하는 밀폐테가 형성된 것을 특징으로 하는 CIGS층 형성장치.The method of claim 3,
CIGS layer forming apparatus, characterized in that the sealing frame is formed in one of the outer peripheral surface of the outer side and the outer peripheral surface of one side of the inner body to seal the space between the outer body and the inner body. 제4항에 있어서,
상기 도어는 상기 밀폐테와 접촉하고,
상기 도어와 상기 밀폐테 중, 어느 하나의 부위에는 상기 도어와 상기 밀폐테 사이의 틈을 실링하는 실링부재가 설치된 것을 특징으로 하는 CIGS층 형성장치.5. The method of claim 4,
The door is in contact with the closure frame,
CIGS layer forming apparatus, characterized in that the sealing member for sealing a gap between the door and the sealing frame is installed in any one of the door and the sealing frame. 제5항에 있어서,
상기 외부본체의 외주면에는 플런저를 가지는 실린더가 복수개 설치되고,
상기 플런저에는 상기 플런저에 의하여 직선운동하면서 상기 도어를 상기 밀폐테에 밀착시키는 후크가 회전가능하게 설치된 것을 특징으로 하는 CIGS층 형성장치.The method of claim 5,
The outer peripheral surface of the outer body is provided with a plurality of cylinders having a plunger,
CIGS layer forming apparatus, characterized in that the plunger is rotatably installed to the door in close contact with the door while the linear movement by the plunger. 제6항에 있어서,
일측은 상기 플런저에 지지되고 타측은 상기 후크에 지지되어 상기 후크를 지지하는 탄성부재가 설치된 것을 특징으로 하는 CIGS층 형성장치.The method according to claim 6,
CIGS layer forming apparatus, characterized in that one side is supported by the plunger and the other side is supported by the hook to support the hook. 제2항에 있어서,
상기 기판은 복수개가 보트에 적재 저장된 상태로 상기 챔버에 로딩 또는 상기 챔버로부터 언로딩되고,
상기 내부본체에는 상기 보트의 하면 테두리부측을 지지하는 한쌍의 지지레일이 상호 대향되게 형성된 것을 특징으로 하는 CIGS층 형성장치.The method of claim 2,
The substrate is loaded into the chamber or unloaded from the chamber in a state where a plurality of substrates are loaded and stored in a boat,
CIGS layer forming apparatus, characterized in that the inner body has a pair of support rails supporting the lower edge portion of the boat facing each other. 제8항에 있어서,
상기 보트의 하면 테두리부측에는 상기 지지레일과 접촉하는 롤러가 설치된 것을 특징으로 하는 CIGS층 형성장치.
9. The method of claim 8,
CIGS layer forming apparatus, characterized in that the roller in contact with the support rail is provided on the lower edge portion of the boat.
KR1020110121342A 2011-11-21 2011-11-21 Apparatus for forming cigs layer KR20130055752A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110121342A KR20130055752A (en) 2011-11-21 2011-11-21 Apparatus for forming cigs layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110121342A KR20130055752A (en) 2011-11-21 2011-11-21 Apparatus for forming cigs layer

Publications (1)

Publication Number Publication Date
KR20130055752A true KR20130055752A (en) 2013-05-29

Family

ID=48664044

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110121342A KR20130055752A (en) 2011-11-21 2011-11-21 Apparatus for forming cigs layer

Country Status (1)

Country Link
KR (1) KR20130055752A (en)

Similar Documents

Publication Publication Date Title
US8628997B2 (en) Method and device for cadmium-free solar cells
JP5873881B2 (en) Photovoltaic power generation apparatus and manufacturing method thereof.
Park et al. A buffer-layer/a-SiOx: H (p) window-layer optimization for thin film amorphous silicon based solar cells
Echendu et al. The effect on CdS/CdTe solar cell conversion efficiency of the presence of fluorine in the usual CdCl2 treatment of CdTe
KR101274095B1 (en) Apparatus for forming cigs layer
CN105556651B (en) Annealing device and the heat treatment system for having the annealing device
Kobayashi et al. Efficient Cu (In, Ga) Se2 thin film solar cells with reduced thickness of ZnS (O, OH) buffer layer
KR101385698B1 (en) Heat treatment apparatus and heat treatment system having the same
KR101452341B1 (en) Apparatus for processing substrate
KR101274130B1 (en) Apparatus for forming cigs layer
KR20130055752A (en) Apparatus for forming cigs layer
KR101484552B1 (en) Heat treatment system
KR101365048B1 (en) Boat transferring system
KR101317299B1 (en) Heater and apparatus for forming cigs layer using the same
KR20130057197A (en) Apparatus for forming cigs layer
KR20130130287A (en) Apparatus for forming cigs layer
KR101452332B1 (en) Apparatus for processing substreat
KR101284131B1 (en) Apparatus for forming cigs layer
KR101274103B1 (en) Apparatus for forming cigs layer
CN103094372A (en) Solar cell and manufacturing method thereof
KR101284126B1 (en) Apparatus for forming cigs layer
KR101218931B1 (en) 3-dimensional solar cell module comprising the pillar-type solar cell
KR101284117B1 (en) Layout of cigs layer forming equipmnet
KR101274117B1 (en) Apparatus for forming cigs layer
KR101399663B1 (en) Heat treatment apparatus

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application