KR101274095B1 - Apparatus for forming cigs layer - Google Patents

Apparatus for forming cigs layer Download PDF

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KR101274095B1
KR101274095B1 KR1020110083110A KR20110083110A KR101274095B1 KR 101274095 B1 KR101274095 B1 KR 101274095B1 KR 1020110083110 A KR1020110083110 A KR 1020110083110A KR 20110083110 A KR20110083110 A KR 20110083110A KR 101274095 B1 KR101274095 B1 KR 101274095B1
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이경호
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주식회사 테라세미콘
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    • H—ELECTRICITY
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    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
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Abstract

CIGS층 형성장치가 개시된다. 본 발명에 따른 CIGS층 형성장치는, 챔버를 형성하는 벽체가 수직으로 배치되고, 송풍수단이 챔버의 분위기 가스를 상하측으로 강제로 순환시킨다. 즉, 챔버의 분위기 가스는 자연 대류에 의하여 순환함과 동시에, 송풍수단에 의하여 자연 대류의 방향과 동일한 방향으로 강제로 순환된다. 따라서, 챔버의 모든 부위에 걸쳐서 챔버의 분위기 가스가 균일하게 순환되므로, 모든 기판이 균일하게 처리될 뿐만 아니라, 하나의 기판의 전체면이 균일하게 처리되는 효과가 있다. 그리고, 챔버를 개폐하는 도어가 자동으로 동작하므로 편리하게 사용할 수 있는 효과가 있다.A CIGS layer forming apparatus is disclosed. In the CIGS layer forming apparatus according to the present invention, the wall forming the chamber is vertically arranged, and the blowing means forcibly circulates the atmospheric gas of the chamber up and down. That is, the atmosphere gas of the chamber circulates by natural convection and is forcedly circulated by the blowing means in the same direction as the direction of natural convection. Therefore, since the atmosphere gas of the chamber is uniformly circulated over all parts of the chamber, not only all the substrates are uniformly processed, but also the entire surface of one substrate is uniformly processed. And, since the door that opens and closes the chamber automatically operates, there is an effect that can be conveniently used.

Description

ＣＩＧＳ층 형성장치 {APPARATUS FOR FORMING CIGS LAYER}CIS layer forming apparatus {APPARATUS FOR FORMING CIGS LAYER}

본 발명은 박막형 태양전지의 CIGS층 형성장치에 관한 것이다.The present invention relates to a CIGS layer forming apparatus of a thin film solar cell.

오늘날, 고갈되어 가는 화석 연료에 대한 의존도를 줄이기 위해, 고갈될 염려가 없을 뿐만 아니라 친환경적인 태양에너지를 활용하는 태양전지(Solar Cell)에 대한 연구 개발이 활발히 진행 중이다.Today, in order to reduce the dependence on depleted fossil fuels, research and development on active solar cells that utilize not only the risk of depletion but also use environmentally friendly solar energy are in progress.

이러한 연구 개발의 일환으로, 태양광의 흡수율이 높고, 태양광 또는 방사선에 대한 열화 현상이 적으며, 박막화가 가능하고, 제작상 재료비를 절감할 수 있는 CIGS{Cu(In1-xGax)Se2} 층이 형성된 박막형 태양전지가 개발되었다.As part of this research and development, CIGS {Cu (In1-xGax) Se 2 } layer which has high absorption rate of solar light, little degradation of sunlight or radiation, thin film and low material cost. The formed thin film solar cell has been developed.

박막형 태양전지는 유리 등의 기판, 기판 상에 형성된 금속층으로 이루어진 (+)극인 전극층, 전극층 상에 형성되며 광을 흡수하는 p형의 CIGS층, CIGS층 상에 형성된 n형의 버퍼층 및 버퍼층 상에 형성된 (-)극인 투명 전극층을 포함하는 다층 적층 구조이다.Thin-film solar cells include a substrate such as glass, an electrode layer which is a positive electrode made of a metal layer formed on the substrate, a p-type CIGS layer formed on the electrode layer to absorb light, an n-type buffer layer and a buffer layer formed on the CIGS layer. It is a multilayer laminated structure containing the transparent electrode layer which is the formed (-) pole.

그리하여, 수광부인 투명 전극층을 통하여 태양광이 입사되면, p-n 접합부 부근에서는 대략 1.04 eV 의 밴드갭 에너지를 갖는 여기된 한 쌍의 전자 및 정공이 생성된다. 그리고, 여기된 전자와 정공은 확산에 의해 p-n 접합부에 도달하고, 접합부의 내부 전계에 의해 전자가 n 영역에, 정공이 p 영역에 집합하여 분리된다.Thus, when sunlight enters through the transparent electrode layer serving as the light receiving portion, a pair of excited electrons and holes having a bandgap energy of approximately 1.04 eV are generated near the p-n junction. The excited electrons and holes reach the p-n junction by diffusion, and electrons are collected in the n region and holes are separated in the p region by the internal electric field of the junction.

그러면, n 영역은 마이너스로 대전되고, p 영역은 플러스로 대전되며, 각 영역에 형성된 전극 간에는 전위차가 생긴다. 그리고, 전위차를 기전력으로 하여 각 전극 사이를 도선으로 연결하면 광전류가 얻어진다. 이것이 태양전지의 원리이다.Then, the n region is negatively charged, the p region is positively charged, and a potential difference occurs between the electrodes formed in each region. A photocurrent is obtained when the potential difference is used as an electromotive force and the respective electrodes are connected by a lead wire. This is the principle of solar cells.

박막형 태양전지의 CIGS층을 형성하는 방법은, 기판에 형성된 전극층 상에 Cu/Ga, Cu/In 또는 Cu-Ga/In 중의 어느 하나로 이루어진 전구물질(前購物質, Precursor)을 형성하고, 전구물질을 스퍼터링 등의 방법으로 적층 구조의 전구체막으로 형성한 다음, 전구체막을 셀렌화(selenization)하여 CIGS층을 형성한다.In the method for forming the CIGS layer of the thin-film solar cell, a precursor made of any one of Cu / Ga, Cu / In, or Cu-Ga / In is formed on an electrode layer formed on a substrate, and the precursor is formed. Is formed into a precursor film having a laminated structure by sputtering or the like, and then the precursor film is selenized to form a CIGS layer.

그리고, 전구체막을 셀렌화하는 방법은 전구체막이 형성된 기판을 밀폐된 챔버에 로딩시키고, 챔버를 불활성가스로 치환한 다음, 챔버에 처리가스인 셀렌화 수소(H2Se)을 도입한 후, 챔버를 일정 온도로 승온시켜 일정 시간 유지하면, 셀렌화된 CIGS층이 형성된다.In the method of selenizing the precursor film, the substrate on which the precursor film is formed is loaded into a closed chamber, the chamber is replaced with an inert gas, and hydrogen selenide (H 2 Se), which is a processing gas, is introduced into the chamber, and then the chamber is opened. When the temperature is raised to a constant temperature and maintained for a certain time, a selenized CIGS layer is formed.

종래의 CIGS층 형성장치는 챔버에 로딩된 복수의 기판을 균일하게 처리하기 위하여, 챔버를 기준으로, 수평방향 일측에서 타측으로 분위기 가스를 강제로 순환시킨다. 그러면, 챔버를 기준으로, 상하로 순환되는 분위기 가스의 자연 대류 현상을 이용할 수 없으므로, 챔버의 온도가 부위별로 상이하게 된다. 이로 인해, 기판이 상대적으로 불균일하게 처리되는 단점이 있었다.In the conventional CIGS layer forming apparatus, in order to uniformly process a plurality of substrates loaded in the chamber, the atmospheric gas is forcedly circulated from one side of the horizontal direction to the other side of the chamber. Then, since the natural convection phenomenon of the atmospheric gas circulated up and down based on the chamber cannot be used, the temperature of the chamber is different for each part. This has the disadvantage that the substrate is treated relatively unevenly.

그리고, 챔버를 개폐하는 도어를 수작업으로 조작하여야 하므로, 불편한 단점이 있었다.And, since the door to open and close the chamber must be manually operated, there was an inconvenience inconvenient.

CIGS층 형성장치와 관련된 기술은 한국공개특허공보 10-2010-0126854호 등에 개시되어 있다.The technology related to the CIGS layer forming apparatus is disclosed in Korea Patent Publication No. 10-2010-0126854.

본 발명은 상기와 같은 종래 기술의 문제점들을 해소하기 위하여 안출된 것으로, 본 발명의 목적은 챔버의 분위기 가스를 상하측으로 강제 순환시킴으로써, 기판을 균일하게 처리할 수 있는 CIGS층 형성장치를 제공함에 있다.The present invention has been made to solve the above problems of the prior art, an object of the present invention is to provide a CIGS layer forming apparatus capable of uniformly treating the substrate by forcibly circulating the atmosphere gas of the chamber up and down. .

본 발명의 다른 목적은 챔버를 개폐하는 도어를 자동으로 조작함으로써, 사용이 편리한 CIGS층 형성장치를 제공함에 있다.Another object of the present invention is to provide a CIGS layer forming apparatus that is easy to use by automatically operating a door that opens and closes a chamber.

상기 목적을 달성하기 위하여, 본 발명에 따른 CIGS층 형성장치는, 복수개의 기판이 상호 간격을 가지면서 상하로 기립된 상태로 로딩되어 처리되는 챔버를 제공하는 벽체(壁體); 상기 벽체의 하면에 승강가능하게 설치되어 상기 챔버를 개폐하는 도어; 상기 도어 측에 설치되어 상기 챔버의 분위기 가스를 상하측으로 순환시키는 송풍수단을 포함한다.In order to achieve the above object, the CIGS layer forming apparatus according to the present invention includes a wall for providing a chamber in which a plurality of substrates are loaded and processed while standing up and down while having a mutual spacing therebetween; A door configured to be elevated on a lower surface of the wall to open and close the chamber; It is installed on the door side includes a blowing means for circulating the atmosphere gas of the chamber up and down.

본 발명에 따른 CIGS층 형성장치는, 챔버를 형성하는 벽체가 수직으로 배치되고, 송풍수단이 챔버의 분위기 가스를 상하측으로 강제로 순환시킨다. 즉, 챔버의 분위기 가스는 자연 대류에 의하여 순환함과 동시에, 송풍수단에 의하여 자연 대류의 방향과 동일한 방향으로 강제로 순환된다. 따라서, 챔버의 모든 부위에 걸쳐서 챔버의 분위기 가스가 균일하게 순환되므로, 모든 기판이 균일하게 처리될 뿐만 아니라, 하나의 기판의 전체면이 균일하게 처리되는 효과가 있다.In the CIGS layer forming apparatus according to the present invention, the wall forming the chamber is vertically arranged, and the blowing means forcibly circulates the atmospheric gas of the chamber up and down. That is, the atmosphere gas of the chamber circulates by natural convection and is forcedly circulated by the blowing means in the same direction as the direction of natural convection. Therefore, since the atmosphere gas of the chamber is uniformly circulated over all parts of the chamber, not only all the substrates are uniformly processed, but also the entire surface of one substrate is uniformly processed.

그리고, 챔버를 개폐하는 도어가 자동으로 동작하므로 편리하게 사용할 수 있는 효과가 있다.And, since the door that opens and closes the chamber automatically operates, there is an effect that can be conveniently used.

도 1은 본 발명의 일 실시예에 따른 CIGS층 형성장치의 사시도.
도 2는 도 1에 도시된 CIGS층 형성장치의 일부 절개 사시도.
도 3은 도 1에 도시된 CIGS층 형성장치의 도어가 하강한 상태를 보인 사시도.
도 4는 도 3에 도시된 도어 부위의 확대 사시도.1 is a perspective view of a CIGS layer forming apparatus according to an embodiment of the present invention.
FIG. 2 is a partially cutaway perspective view of the CIGS layer forming apparatus shown in FIG. 1. FIG.
3 is a perspective view showing a state in which the door of the CIGS layer forming apparatus shown in FIG.
4 is an enlarged perspective view of the door part shown in FIG. 3;

후술하는 본 발명에 대한 상세한 설명은, 본 발명이 실시될 수 있는 특정 실시예를 예시하여 도시한 첨부 도면을 참조한다. 이들 실시예는 당업자가 본 발명을 실시할 수 있도록 충분히 상세하게 설명된다. 본 발명의 다양한 실시예는 상호 다르지만 상호 배타적일 필요는 없음이 이해되어야 한다. 예를 들어, 여기에 기재되어 있는 특정 형상, 특정 구조 및 특성은 일 실시예와 관련하여 본 발명의 정신 및 범위를 벗어나지 않으면서 다른 실시예로 구현될 수 있다. 또한, 각각의 개시된 실시예 내의 개별 구성요소의 위치 또는 배치는 본 발명의 정신 및 범위를 벗어나지 않으면서 변경될 수 있음이 이해되어야 한다. 따라서, 후술하는 상세한 설명은 한정적인 의미가 아니며, 본 발명의 범위는, 적절하게 설명된다면, 그 청구항들이 주장하는 것과 균등한 모든 범위와 더불어 첨부된 청구항에 의해서만 한정된다. 도면에 도시된 실시예들의 길이, 면적, 두께 및 형태는, 편의상, 과장되어 표현될 수도 있다.DETAILED DESCRIPTION OF THE INVENTION The following detailed description of the invention refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are mutually exclusive, but need not be mutually exclusive. For example, certain features, specific structures, and features described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with one embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled. The length, area, thickness, and shape of the embodiments shown in the drawings may be exaggerated for convenience.

이하, 첨부된 도면을 참조하여 본 발명의 일 실시예에 따른 CIGS층 형성장치를 상세히 설명한다.Hereinafter, a CIGS layer forming apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 일 실시예에 따른 CIGS층 형성장치의 사시도이고, 도 2는 도 1에 도시된 CIGS층 형성장치의 일부 절개 사시도이며, 도 3은 도 1에 도시된 CIGS층 형성장치의 도어가 하강한 상태를 보인 사시도이고, 도 4는 도 3에 도시된 도어 부위의 확대 사시도이다.1 is a perspective view of a CIGS layer forming apparatus according to an embodiment of the present invention, FIG. 2 is a partially cutaway perspective view of the CIGS layer forming apparatus shown in FIG. 1, and FIG. 3 is a view of the CIGS layer forming apparatus shown in FIG. 1. 4 is a perspective view illustrating the door lowered, and FIG. 4 is an enlarged perspective view of the door part illustrated in FIG. 3.

도시된 바와 같이, 본 실시예에 따른 CIGS층 형성장치는 유리 등의 기판(50)이 로딩되어 처리되는 챔버(110a)를 제공하는 스테인리스 스틸로 형성된 벽체(壁體)(110)를 포함한다. 벽체(110)는 수직으로 기립 설치되며, 챔버(110a)가 형성된 내부벽체(111)와 내부벽체(111)의 상면과 측면을 감싸는 형태로 설치되며 내부벽체(111)의 외면과 간격을 가지는 외부벽체(115)를 가진다.As shown, the CIGS layer forming apparatus according to the present embodiment includes a wall 110 formed of stainless steel that provides a chamber 110a in which a substrate 50 such as glass is loaded and processed. The wall 110 is vertically installed and is installed in the form of surrounding the upper and side surfaces of the inner wall 111 and the inner wall 111 in which the chamber 110a is formed, and having an outer surface and an outer surface of the inner wall 111. It has a wall 115.

내부벽체(111)의 하면 테두리부측에는 외측으로 돌출된 플랜지부(112)가 형성되고, 외부벽체(115)의 하면은 플랜지부(112)에 밀폐 결합된다. 내부벽체(111)와 외부벽체(115) 사이의 공간에는 질소 가스가 유입될 수 있다. 질소 가스는 챔버(110a)로 유입된 후술할 셀렌화 수소(H2Se)가 내부벽체(111)와 외부벽체(115) 사이로 누설되었을 때, 셀렌화 수소를 희석시킨다.A flange portion 112 protruding outward is formed on the lower edge portion of the inner wall 111, and the lower surface of the outer wall 115 is hermetically coupled to the flange portion 112. Nitrogen gas may flow into the space between the inner wall 111 and the outer wall 115. Nitrogen gas dilutes hydrogen selenide when hydrogen selenide (H 2 Se) to be introduced into the chamber 110a leaks between the inner wall 111 and the outer wall 115.

그리고, 내부벽체(111)와 외부벽체(115)의 사이에는 히터(미도시)가 설치될 수 있다. 상기 히터는 내부벽체(111)의 외면을 소정 온도로 가열하여 내부벽체(111)의 내면과 외면이 상이하게 열팽창되어 변형되는 것을 방지한다.In addition, a heater (not shown) may be installed between the inner wall 111 and the outer wall 115. The heater heats an outer surface of the inner wall 111 to a predetermined temperature to prevent the inner surface and the outer surface of the inner wall 111 from being thermally expanded and deformed differently.

내부벽체(111)의 하면에는 출입구(113)가 형성되고, 출입구(113)에는 도어(120)가 승강가능하게 설치된다. 도어(120)는 내부벽체(111)의 하측에 설치된 실린더 등과 같은 승강수단(미도시)에 의하여 승강하면서 출입구(113)를 개폐한다.An entrance 113 is formed on a lower surface of the inner wall 111, and a door 120 is provided at the entrance 113 so as to be liftable. The door 120 opens and closes the doorway 113 while elevating by elevating means (not shown) such as a cylinder installed under the inner wall 111.

도어(120)에 의하여 출입구(113)가 완전하게 실링되도록 도어(120)의 테두리부측에는 링형상을 이루는 안치홈이 형성되고, 상기 안치홈에는 출입구(113)와 인접한 내부벽체(111)의 하면 부위에 밀착되는 실링부재(121)가 삽입 안치된다.A ring-shaped settling groove is formed at the edge of the door 120 so that the doorway 113 is completely sealed by the door 120, and the bottom surface of the inner wall 111 adjacent to the doorway 113 is formed in the settling groove. Sealing member 121 in close contact with the site is inserted and placed.

실링부재(121)가 내부벽체(111)의 하면에 더욱 밀착되도록 하기 위하여, 도어(120)의 하측에는 지지판(123)이 설치되고, 지지판(123)과 도어(120) 사이에는 탄성부재(125)가 개재된다.In order for the sealing member 121 to be in close contact with the lower surface of the inner wall 111, the support plate 123 is installed under the door 120, and the elastic member 125 is provided between the support plate 123 and the door 120. ) Is interposed.

상세히 설명하면, 지지판(123)은 상기 승강수단에 지지되고, 지지판(123)과 도어(120)는 탄성부재(125)를 매개로 상호 연결된다. 그러면, 상기 승강수단에 의하여 지지판(123)이 상승하면, 지지판(123)에 의하여 도어(120)가 상승하고, 도어(120)의 상승에 의하여 실링부재(121)가 내부벽체(111)의 하면에 접촉된다. 그런데, 지지판(123)이 상기 승강수단에 지지되어 고정되어 있으므로, 탄성부재(125)의 탄성력에 의하여, 도어(120)는 내부벽체(111)의 하면측으로 탄성 지지된다. 따라서, 실링부재(121)가 내부벽체(111)의 하면에 더욱 밀착된다.In detail, the support plate 123 is supported by the lifting means, and the support plate 123 and the door 120 are connected to each other through the elastic member 125. Then, when the support plate 123 is raised by the lifting means, the door 120 is raised by the support plate 123, the sealing member 121 is lower surface of the inner wall 111 by the rising of the door 120. Is in contact with. However, since the support plate 123 is supported and fixed to the lifting means, the door 120 is elastically supported to the lower surface side of the inner wall 111 by the elastic force of the elastic member 125. Therefore, the sealing member 121 is in close contact with the lower surface of the inner wall 111.

도어(120)의 상면에는 단열판(131)이 설치되고, 단열판(131)의 상면에는 복수의 히터(133)와 복수의 히터(133)가 지지 결합된 투명한 열전달판(135)이 설치된다. 히터(133)와 열전달판(135)은 기판(50)을 처리하기 위하여 챔버(110a)로 유입된 분위기 가스를 소정 온도로 가열한다.The heat insulating plate 131 is installed on the top surface of the door 120, and the transparent heat transfer plate 135 on which the plurality of heaters 133 and the plurality of heaters 133 are supported and coupled is installed on the top surface of the heat insulating plate 131. The heater 133 and the heat transfer plate 135 heat the atmosphere gas introduced into the chamber 110a to a predetermined temperature in order to process the substrate 50.

복수의 히터(133)는 상호 상이한 직경을 가지는 대략 링형상으로 형성되어 동심을 이루면서 배치된다. 그리고, 상호 결합되어 하나의 세트를 이루는 히터(133)와 열전달판(135)은 상하로 간격을 가지면서 적층된 형태로 설치된다.The plurality of heaters 133 are formed in a substantially ring shape having mutually different diameters and are arranged concentrically. Then, the heater 133 and the heat transfer plate 135, which are coupled to each other to form a set, are installed in a stacked form with a vertical gap therebetween.

열전달판(135)은 히터(133)로부터 복사열을 전달받아 챔버(110a)로 전달함과 동시에 히터(133)에서 발생된 광을 투과시킨다. 따라서, 챔버(110a)의 분위기 가스는 단면적이 넓은 열전달판(135)과 히터(133)에서 조사된 광에 의하여 가열되므로, 신속하게 가열될 수 있다.The heat transfer plate 135 receives radiant heat from the heater 133 and transmits the radiant heat to the chamber 110a and simultaneously transmits the light generated by the heater 133. Therefore, the atmosphere gas of the chamber 110a is heated by the light radiated from the heat transfer plate 135 and the heater 133 having a wide cross-sectional area, and thus can be quickly heated.

내부벽체(111)의 내부에도 히터(133)와 동일한 기능을 하는 복수의 히터(137)가 설치될 수 있다.A plurality of heaters 137 having the same function as the heater 133 may be installed inside the inner wall 111.

기판(50)은 상하로 기립된 형태로 복수개가 상호 간격을 가지면서 보트(140)에 지지되어 챔버(110a)에 로딩되어 처리된다. 보트(140)는 상하면이 개방되며 내면에는 기판(50)의 테두리부측이 삽입 지지되는 지지홈(미도시)이 형성된다.The substrate 50 is supported by the boat 140 while being spaced apart from each other in the form of standing up and down, and is loaded and processed in the chamber 110a. The boat 140 has an open top and bottom and a support groove (not shown) in which an edge of the substrate 50 is inserted and supported.

지지판(123), 도어(120), 단열판(131), 히터(133), 열전달판(135) 및 보터(140)는 함께 승강한다.The support plate 123, the door 120, the heat insulation plate 131, the heater 133, the heat transfer plate 135, and the boater 140 are elevated together.

전극층과 Cu/Ga, Cu/In 또는 Cu-Ga/In 중의 어느 하나로 이루어진 전구물질(前購物質, Precursor)에 의한 전구체막이 형성된 기판(50)을 보트(140)에 지지시킨 다음, 보트(140)를 열전달판(135)의 상측에 탑재 지지시킨다. 그 후, 지지판(123)을 상승시키면, 보트(140)가 챔버(110a)에 위치되고, 챔버(110a)는 밀폐된다. 이러한 상태에서, 챔버(110a)에 질소 가스를 유입한 다음, 셀렌화 가스(H2Se)를 주입하여 소정 온도에서 CIGS층을 형성하고, CIGS층 형성한 다음에는 또 다른 소정 온도에서 황화 가스(H2S)를 주입하여 기판(50)을 처리한다.The boat 140 supports the substrate 50 on which the precursor layer formed of a precursor layer made of an electrode layer and any one of Cu / Ga, Cu / In, or Cu-Ga / In is formed on the boat 140, and then the boat 140 ) Is mounted and supported on the upper side of the heat transfer plate 135. Then, when the support plate 123 is raised, the boat 140 is located in the chamber 110a and the chamber 110a is closed. In this state, nitrogen gas is introduced into the chamber 110a, and selenization gas (H 2 Se) is injected to form a CIGS layer at a predetermined temperature, and after forming the CIGS layer, a sulfide gas ( H 2 S) is injected to process the substrate 50.

CIGS층을 형성할 때, 챔버(110a)의 분위가 가스가 복수의 기판(50)으로 균일하게 전달됨과 동시에, 하나의 기판(50)의 전체면에 균일하게 전달되어야 기판(50)이 균일하게 처리된다.When forming the CIGS layer, the chamber 110a is uniformly transferred to the entire surface of one substrate 50 while the gas is uniformly transferred to the plurality of substrates 50. do.

이를 위하여, 본 실시예에 따른 CIGS층 형성장치의 도어(120) 측에는 챔버(110a)의 분위기 가스를 상하측으로 순환시키는 송풍수단이 마련된다. 상기 송풍수단은 도어(120) 측에 지지된 팬(151)으로 마련된다.To this end, blowing means for circulating the atmosphere gas of the chamber 110a up and down is provided on the door 120 side of the CIGS layer forming apparatus according to the present embodiment. The blowing means is provided with a fan 151 supported on the door 120 side.

팬(151)은 시로코 팬(Siroco Fan)으로 형성되며, 기판(50)들의 하단면(下端面)이 위치된 보트(140)의 직하방에 위치되어 챔버(110a)의 분위기 가스를 기판(50)들의 하부측과 대향하는 중앙부측으로 흡입한 다음 외측으로 배출시켜 순환시킨다.The fan 151 is formed of a Siroco fan, and is located directly below the boat 140 in which the bottom surfaces of the substrates 50 are positioned to supply the atmosphere gas of the chamber 110a to the substrate 50. Inhaled to the central side opposite the lower side of the) and then discharged to the outside to circulate.

그리고, 팬(151)과 보트(140) 사이에는 확산판(155)이 위치된다. 확산판(155)은 기판(50)들을 통과한 챔버(110a)의 분위기 가스가 어느 일측으로 모이지 않고 확산된 상태로 팬(151)의 중앙부측으로 흡입되도록 안내한다. 확산판(155)은 도어(120)에 지지된 열전달판(135)에 지지되어 도어(120)와 함께 승강한다.In addition, a diffusion plate 155 is positioned between the fan 151 and the boat 140. The diffusion plate 155 guides the atmospheric gas of the chamber 110a passing through the substrates 50 to be sucked toward the center portion of the fan 151 in a diffused state without gathering to one side. The diffusion plate 155 is supported by the heat transfer plate 135 supported by the door 120 to move up and down with the door 120.

전술한 열전달판(135)은 링형상으로 형성되어 팬(151)의 외측 부위를 감싸는 형태로 설치된다. 따라서, 팬(151)에서 배출되는 챔버(110a)의 분위기 가스는 난류를 형성하지 않고 내부벽체(111)의 측면측으로 균일하게 배출된다. 그리고, 팬(151)에 의하여 내부벽체(111)의 측면측으로 배출된 챔버(110a)의 분위기 가스는 내부벽체(111)의 측면을 타고 상승한다.The heat transfer plate 135 is formed in a ring shape and is installed in a form surrounding the outer portion of the fan 151. Therefore, the atmosphere gas of the chamber 110a discharged from the fan 151 is uniformly discharged to the side surface of the inner wall 111 without forming turbulence. In addition, the atmosphere gas of the chamber 110a discharged to the side surface of the inner wall 111 by the fan 151 rises along the side surface of the inner wall 111.

본 실시예에 따른 CIGS층 형성장치는 챔버(110a)를 형성하는 벽체(110)가 수직으로 배치되고, 송풍수단이 챔버(110a)의 분위기 가스를 상하측으로 강제로 순환시킨다. 즉, 챔버(110a)의 분위기 가스는 자연 대류에 의하여 순환함과 동시에, 송풍수단에 의하여 자연 대류의 방향과 동일한 방향으로 강제로 순환된다. 따라서, 챔버(110a)의 모든 부위에 걸쳐서 챔버(110a)의 분위기 가스가 균일하게 순환되므로, 모든 기판(50)이 균일하게 처리될 뿐만 아니라, 하나의 기판(50)의 전체면이 균일하게 처리된다.In the CIGS layer forming apparatus according to the present embodiment, the wall 110 forming the chamber 110a is vertically disposed, and the blowing means forcibly circulates the atmosphere gas of the chamber 110a up and down. That is, the atmosphere gas of the chamber 110a circulates by natural convection and is forcibly circulated by the blowing means in the same direction as the direction of natural convection. Therefore, since the atmosphere gas of the chamber 110a is uniformly circulated over all the portions of the chamber 110a, not only all the substrates 50 are uniformly processed, but also the entire surface of one substrate 50 is uniformly processed. do.

그리고, 챔버(110a)를 개폐하는 도어(120)가 자동으로 동작하므로 사용하기가 편리하다.In addition, the door 120 for opening and closing the chamber 110a operates automatically, and thus is convenient to use.

본 발명은 상술한 바와 같이 바람직한 실시예를 예로 들어 도시하여 설명하였으나, 상기 실시예에 한정되지 아니하며 본 발명의 정신을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변형과 변경이 가능하다. 그러한 변형예 및 변경예는 본 발명과 첨부된 특허청구범위의 범위 내에 속하는 것으로 보아야 한다.Although the present invention has been described with reference to preferred embodiments as described above by way of example, it is not limited to the above embodiments and should be made by those skilled in the art without departing from the spirit of the present invention. Many variations and modifications are possible. Such modifications and variations are intended to fall within the scope of the invention and the appended claims.

110: 벽체
120: 도어
151: 팬
155: 확산판110: wall
120: Door
151: fan
155: diffuser plate

Claims (8)

복수개의 기판이 상호 간격을 가지면서 상하로 기립된 상태로 로딩되어 처리되는 챔버를 제공하는 벽체(壁體);
상기 벽체의 하면에 승강가능하게 설치되어 상기 챔버를 개폐하는 도어;
상기 기판들의 하단면(下端面) 직하방에 위치되어 상기 챔버의 분위기 가스를 상기 기판들의 하부측과 대향하는 중앙부측으로 흡입한 다음 외측으로 배출시켜 상하측으로 순환시키는 팬을 포함하는 것을 특징으로 하는 CIGS층 형성장치.A wall for providing a chamber in which a plurality of substrates are loaded and processed while standing up and down while being spaced apart from each other;
A door configured to be elevated on a lower surface of the wall to open and close the chamber;
CIGS, characterized in that it comprises a fan located directly below the bottom surface of the substrate to inhale the atmosphere gas of the chamber to the center side facing the lower side of the substrate and then to the outside to circulate up and down Layer forming apparatus. 삭제delete 제1항에 있어서,
상기 도어 측에는 상기 기판들이 적재 지지되며 상기 도어와 함께 승강하는 보트가 탑재 지지되고,
상기 팬은 상기 도어 측에 지지되어 상기 보트의 개방된 직하방에 위치되고, 상기 도어와 함께 승강하는 것을 특징으로 하는 CIGS층 형성장치.The method of claim 1,
On the door side, the substrates are loaded and supported, and a boat that is lifted with the door is mounted and supported.
The fan is supported on the door side is located directly below the open of the boat, CIGS layer forming apparatus, characterized in that the lifting with the door. 제3항에 있어서,
상기 팬과 상기 보트 사이에는 상기 기판들을 통과한 상기 챔버의 분위기 가스가 확산된 상태로 상기 팬의 중앙부측으로 흡입되도록 안내하는 확산판이 위치되고,
상기 확산판은 상기 도어측에 지지되어 상기 도어와 함께 승강하는 것을 특징으로 하는 CIGS층 형성장치.The method of claim 3,
A diffusion plate is positioned between the fan and the boat to guide suction to the central portion of the fan while the atmosphere gas of the chamber passing through the substrates is diffused.
And the diffusion plate is supported on the door side to move up and down with the door. 제4항에 있어서,
상기 팬의 외측에는 상기 팬을 감싸는 형태로 설치되어 상기 팬에서 배출되는 상기 챔버의 분위기 가스가 상기 팬의 외측으로 배출되도록 안내함과 동시에 상기 챔버의 분위기 가스를 가열하기 위한 히터가 지지되는 복수개의 열전달판이 상하로 간격을 가지면서 배치되고,
상기 열전달판은 상기 도어측에 지지되어 상기 도어와 함께 승강하는 것을 특징으로 하는 CIGS층 형성장치.5. The method of claim 4,
A plurality of heaters are installed on the outside of the fan to guide the atmosphere gas of the chamber discharged from the fan to be discharged to the outside of the fan and to support a heater for heating the atmosphere gas of the chamber. The heat transfer plates are arranged at intervals up and down,
And the heat transfer plate is supported on the door side to move up and down with the door. 제1항에 있어서,
상기 벽체는 상기 챔버를 형성하는 내부벽체와 상기 내부벽체의 상면과 측면을 감싸는 형태로 설치되어 상기 내부벽체의 외면과 간격을 가지는 외부벽체를 포함하고,
상기 내부벽체의 하면에는 상기 도어에 의하여 개폐되는 출입구가 형성된 것을 특징으로 하는 CIGS층 형성장치.The method of claim 1,
The wall includes an inner wall forming the chamber and an outer wall provided to surround the top and side surfaces of the inner wall and having an interval with an outer surface of the inner wall.
CIGS layer forming apparatus characterized in that the lower surface of the inner wall is formed with an entrance opening and closing by the door. 제6항에 있어서,
상기 도어의 상면 테두리부측에는 상기 출입구와 인접한 상기 내부벽체의 하면 부위에 밀착되어 상기 챔버를 실링하는 실링부재가 설치된 것을 특징으로 하는 CIGS층 형성장치.The method according to claim 6,
CIGS layer forming apparatus characterized in that the sealing member for sealing the chamber in close contact with the lower portion of the inner wall adjacent to the doorway on the upper edge portion of the door. 제7항에 있어서,
상기 도어의 하측에는 상기 벽체의 외측에 마련된 승강수단에 지지되어 상기 승강수단에 의하여 승강하는 지지판이 설치되고,
상기 지지판과 상기 도어 사이에는 상기 지지판과 상기 도어를 상호 연결함과 동시에 상기 도어를 상기 내부벽체의 하면측으로 탄성 지지하는 탄성부재가 설치된 것을 특징으로 하는 CIGS층 형성장치.
The method of claim 7, wherein
On the lower side of the door is provided with a support plate which is supported by the lifting means provided on the outer side of the wall and lifted by the lifting means,
CIGS layer forming apparatus, characterized in that between the support plate and the door is connected to the support plate and the door and an elastic member for elastically supporting the door toward the lower surface side of the inner wall.
KR1020110083110A 2011-08-19 2011-08-19 Apparatus for forming cigs layer KR101274095B1 (en)

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