KR20130040303A - Rapid heat treatment apparatus of light absorber layer in solar cell - Google Patents

Abstract

PURPOSE: A rapid heat treatment apparatus of a light absorber layer in a solar cell is provided to uniformly heat the upper surface of a substrate by using a cover panel made of graphite. CONSTITUTION: A chamber(110) has an enclosure space(111). A susceptor(140) is arranged in the inner part of the chamber to support a solar cell substrate(G). A heating part(120) is arranged in the upper or the lower region of the substrate. A cover(170) has an enclosure space for accommodating the substrate and the susceptor. An elevating operation part(150) raises the susceptor or the cover.

Description

Light absorption layer thin film rapid heat treatment device for solar cell {RAPID HEAT TREATMENT APPARATUS OF LIGHT ABSORBER LAYER IN SOLAR CELL}

The present invention relates to a solar cell light absorption layer thin film rapid heat treatment apparatus, and more particularly, in the selenization or sulfidation process, the selenium or sulfur-containing gas rapid heat treatment apparatus for the solar cell can be made only within a minimum region. It is about.

Recently, as the prediction of depletion of existing energy sources such as oil and coal is increasing, interest in alternative energy to replace them is increasing. Among them, solar cells are attracting attention because they are rich in energy resources and have no problems with environmental pollution.

Generally, depending on the material, it can be classified into silicon solar cell, inorganic solar cell using inorganic material such as compound semiconductor (CIGS, CdTe, GaAs, etc.), organic solar cell having some or all of organic materials. Can be. Organic solar cells can be divided into dye-sensitized solar cells and organic polymer solar cells.

In addition, depending on the energy conversion efficiency mechanism and manufacturing cost, the first generation of crystalline silicon solar cells, which are single junction structures, and the second generation of solar cells having a structure of increasing light absorption using thin films and laminated structures, the second generation of organic materials and nanotechnology. Solar cells using can also be classified into three generations.

CIGS (copper-indium-gallium-celium, Cu (In, Ga) Se2), CIGSS (Cu (In, Ga) (SeS) 2) and CIS (CuInSe or CuInS2) thin film solar cells Hereinafter, CIGS (copper-indium-gallium-celium, Cu (In, Ga) Se2), CIGSS (Cu (In, Ga) (SeS) 2) and CIS (CuInSe or CuInS2) thin film has high light absorption coefficient and conversion efficiency, so it is expected to be applied to manufacturing next generation thin film solar cell.

In recent studies, CIGS thin film solar cells are reported to have higher efficiency than thin film amorphous silicon solar cells, and commercialization of CIGS thin film solar cells is becoming visible.

1 is a cross-sectional view schematically showing a CIGS-based thin film solar cell for explaining the embodiment.

Referring to FIG. 1, a CIGS-based thin film solar cell includes a substrate 10 formed of soda lime glass or the like. The substrate 10 includes an electrode layer 20 formed of molybdenum (Mo). An adhesive layer 30 formed of copper (Cu) may be further attached on the electrode layer 20 to improve adhesion. The ionized metal precursor is deposited on the electrode layer 20 or the adhesive layer 30 formed on the substrate 10 to form a light absorption layer 40 of CIS, CIGS, and CIGSS.

The CdS thin film layer 60 made of n-type semiconductor containing cadmium sulfide is attached to the light absorption layer 40. The CdS thin film layer 60 may be attached by chemical bath adhesion (CBD), but is not limited thereto. A conductive layer 70 is attached on the CdS thin film layer 60 to conduct a wide band gap of the n-type semiconductor material. The conductive layer 70 may be formed of two layers of the same material, but is not limited thereto. The metal electrode layer 80 is attached onto the conductive layer 70. The metal electrode layer 80 may be disposed on fine grid lines across the current collecting surface and connected to a suitable current collecting electrode. In order to increase the efficiency of the thin film on the metal electrode layer 80, a coating layer 90 such as diffuse reflection coating or anti-reflection coating may be further attached.

At this time, the light absorption layer 40 needs selenization or sulfiding, and selenization and sulfidation of CIS, CIGS, and CIGSS are performed in a selenium or sulfur-containing gas atmosphere, and using H 2 Se and H 2 S gases. It is largely divided into a method using Se and S through an elevated temperature.

In the case of H2Se and H2S gas, because it is a gaseous state, there is an advantage that it is relatively easy to control. In the case of Se, it exists in the liquid phase above 200 ℃, and it is difficult to control selenium gas due to rapid vaporization at selenization process temperature, and unevenness of gas composition because selenium gas is developed downward due to specific gravity difference inside the circular quartz reactor. Indicates.

In the conventional heat treatment apparatus, the entire confined space of the chamber in which the substrate is accommodated is selenized or sulfur-containing gas atmosphere for selenization or sulfidation of the substrate, and when the substrate is heat-treated, selenium or sulfur-containing gas is recovered. It consists of a structure, because the entire closed space inside the chamber is composed of a selenium or sulfur-containing gas atmosphere, there was a problem that the amount of toxic gas used increases.

Prior Art 1. Republic of Korea Patent Publication 10-2011-0025581 (March 10, 2011)

Accordingly, an object of the present invention is to solve such a conventional problem, a solar cell light absorbing layer thin film rapid heat treatment apparatus that can be made in the selenium or sulfur sulfide process in the atmosphere of the selenium or sulfur containing only a minimum area. In providing.

The present invention also provides a solar cell light absorption layer thin film rapid heat treatment apparatus capable of heating the entire upper side of a substrate at an uniform temperature by configuring a material of a panel finishing the upper side of the cover.

The present invention also provides a solar cell light absorbing layer thin film rapid heat treatment apparatus capable of transmitting radiant heat of an upper heating part to a substrate through a lid as it is made of a quartz material.

The present invention also provides a solar cell light absorption layer thin film rapid heat treatment apparatus capable of improving heat treatment efficiency and shortening process progress time by allowing a substrate mounted on a susceptor to be heat treated in a state in which the substrate is placed close to the upper heating unit.

In addition, by providing a cooling unit for supplying a cooling gas to the substrate inside the chamber to provide a quick heat treatment apparatus for a thin film for the light absorption layer for solar cells that can improve the utilization efficiency of the equipment by rapidly cooling the substrate after the heat treatment.

In addition, the discharge portion of the cooling unit is formed in a plate-shaped, and disposed on the opposite side of the substrate on the basis of the heating portion so that the radiant heat supplied toward the opposite side of the substrate is reflected by the discharge portion, the light absorption layer for solar cells that can improve the utilization efficiency of thermal energy It is to provide a thin film rapid heat treatment apparatus.

In addition, by installing a temperature sensor on each of the plurality of supports that support the lower part of the susceptor to measure the temperature of each part of the susceptor, and by using the measured temperature value to adjust the heating value of the heating unit to maintain a uniform temperature distribution of the substrate The present invention provides a light absorption layer thin film rapid heat treatment apparatus for a solar cell.

According to the present invention, in the solar cell light absorption layer thin film rapid heat treatment apparatus, a chamber for providing an openable and closed space; and a susceptor disposed inside the chamber to support the lower portion of the solar cell substrate; and A heating unit disposed in at least one upper region of the upper region and the lower region of the substrate; And an elevating driving part for elevating the susceptor or the cover, wherein the cover is connected to a gas supply pipe connected to the outside of the chamber, and a plurality of gas nozzle holes are formed on the inner surface to inject the source gas into the closed space. The light absorption layer thin film rapid heat treatment apparatus for solar cells is achieved.

Here, the cover comprises a panel for closing the upper side of the susceptor, and a hollow tube frame disposed on the lower edge of the panel to be in close contact with the edge of the susceptor, the gas nozzle hole is the inside of the hollow tube frame It is preferred to be spaced apart along the sides.

In addition, the panel is preferably made of a material that absorbs and diffuses the heat provided from the heating unit disposed in the upper region of the substrate and evenly transfers heat to the entire surface of the substrate.

In addition, the panel is preferably made of a material that transmits heat provided from the heating unit disposed in the upper region of the substrate.

In addition, the elevating drive unit preferably includes a driving means, a moving plate which is lifted in the vertical direction by the driving means, and a plurality of supports provided in the vertical direction on the movable plate to support the lower part of the susceptor.

In addition, the cooling unit for supplying a cooling gas toward the substrate, respectively provided on any one of the upper side and the lower side of the chamber; preferably further includes.

In addition, the cooling unit has a hollow part formed therein, and a plurality of discharge holes are formed toward the inner side of the chamber, the supply panel disposed on the upper side or the lower side of the chamber, and the cooling gas connected to the supply panel to supply the cooling gas. It is preferred to include a supply.

In addition, the supply panel is preferably formed with a reflective film on the inner surface facing the substrate to reflect the radiant heat transmitted from the heating portion toward the inner surface of the chamber toward the substrate.

In addition, the through hole is formed in the center of the support in the longitudinal direction, the inside of the through hole it is preferable that the temperature sensor for measuring the lower temperature of the susceptor is inserted.

According to the present invention, there is provided a light absorption layer thin film rapid heat treatment apparatus for a solar cell that can be made in the selenium or sulfiding process, the selenium or sulfur-containing gas atmosphere within a minimum region.

In addition, the light absorbing layer thin film rapid heat treatment apparatus for a solar cell capable of heating the entire upper side of the substrate at an uniform temperature by constructing a material of the panel finishing the upper side of the cover is provided.

In addition, by providing a material of the panel finishing the upper side of the cover is made of a quartz material is provided a solar cell light absorption layer thin film rapid heat treatment apparatus that can be transmitted to the substrate radiant heat through the cover as it is.

In addition, there is provided a solar cell light absorption layer thin film rapid heat treatment apparatus capable of improving the heat treatment efficiency and shortening the process progress time by allowing the substrate mounted on the susceptor to be heat treated in a state in which the substrate is placed close to the upper heating unit.

In addition, there is provided a solar cell light absorption layer thin film rapid heat treatment apparatus that can improve the utilization efficiency of the equipment by providing a cooling unit for supplying a cooling gas to the substrate inside the chamber to quickly cool the substrate after the heat treatment.

In addition, the discharge portion of the cooling unit is formed in a plate-shaped, and disposed on the opposite side of the substrate on the basis of the heating portion so that the radiant heat supplied toward the opposite side of the substrate is reflected by the discharge portion, the light absorption layer for solar cells that can improve the utilization efficiency of thermal energy A thin film rapid heat treatment apparatus is provided.

In addition, by installing a temperature sensor on each of the plurality of supports that support the lower part of the susceptor to measure the temperature of each part of the susceptor, and by using the measured temperature value to adjust the heating value of the heating unit to maintain a uniform temperature distribution of the substrate Provided is a light absorbing layer thin film rapid heat treatment apparatus for a solar cell.

1 is a cross-sectional view schematically showing a typical CIGS-based thin film solar cell
Figure 2 is a partial cutaway perspective view of the light absorption layer thin film rapid heat treatment apparatus for solar cells of the present invention,
Figure 3 is a cross-sectional view of the light absorption layer thin film rapid heat treatment apparatus for solar cells of the present invention,
4 is a cross-sectional view of the operation of the light absorption layer thin film rapid heat treatment apparatus for solar cells of the present invention;
5 is an enlarged cross-sectional view of portion “A” of FIG. 4;
FIG. 6 is an enlarged cross-sectional view of part “B” of FIG. 4;
FIG. 7 is an enlarged view of portion “C” of FIG. 4.

Prior to the description, components having the same configuration are denoted by the same reference numerals as those in the first embodiment. In other embodiments, configurations different from those of the first embodiment will be described do.

Hereinafter, with reference to the accompanying drawings will be described in detail with respect to a solar cell light absorption layer thin film rapid heat treatment apparatus according to a first embodiment of the present invention.

2 is a partial cutaway perspective view of the light absorption layer thin film rapid heat treatment apparatus for solar cells of the present invention, and FIG. 3 is a cross-sectional view of the light absorption layer thin film rapid heat treatment apparatus for solar cells of the present invention.

The light absorption layer thin film rapid heat treatment apparatus for solar cells of the present invention as shown in the drawings, the chamber 110, the heating unit 120, the support pin 130, the susceptor 140, the cover 170, elevating drive unit 150 ) And the cooling unit 160 is configured.

The chamber 110 is to provide a sealed space 111 that can maintain a vacuum state therein, the door 112 is opened and closed on one side for carrying in / out of the substrate (G). In addition, the lower portion of the chamber 110, the base plate 113 is spaced apart from the bottom of the chamber 110, and is disposed in the vertical direction between the chamber 110 and the base plate 113 in a vertical direction and A guide shaft 114 for connecting the base plate 113 is provided.

The heating unit 120 is provided above and below the sealed space 111 of the chamber 110 to provide heat for heat treatment of the substrate G, and a plurality of lamps are provided in the sealed space of the chamber 110 ( The upper and lower portions of the upper and lower portions of 111) are arranged side by side, and the lamp may be a tungsten halogen lamp or an infrared lamp.

The support pins 130 are installed at a lower portion of the chamber 110 in the vertical direction to support a lower portion of the substrate G carried into the chamber 110 through the door 112. It is preferable that the upper end is spherical so as to minimize the contact area with).

The susceptor 140 is disposed to be movable in a vertical direction in the inner lower region of the chamber 110 to selectively support the lower portion of the substrate G. The susceptor 140 is made of a graphite material. A plurality of through-holes through which the support pins 130 are movably inserted are formed.

The cover 170 is a panel 171 which finishes the upper side of the susceptor 140, and a gas for injecting selenium or sulfur-containing gas (hereinafter referred to as 'source gas') on the inner surface toward the substrate G. A plurality of nozzle holes 173 are formed to be in close contact with the edge of the susceptor 140, the hollow tube frame 172 disposed on the lower edge of the panel 171, the gas connected to the hollow tube frame 172 It is configured to include a supply pipe 174, and forms the inner space 175 between the susceptor 140 in the raised position of the susceptor 140. On the other hand, the cover 170 absorbs and diffuses the heat provided from the heating unit 120 disposed in the upper region of the substrate G according to the type of the substrate G or the heat treatment environment. It may be made of a graphite (Graphite) material to transmit evenly with respect to, or made of a Quartz (Quartz) material that transmits heat provided from the heating unit 120 disposed in the upper region of the substrate (G). In addition, although not shown in the drawing, it may be desirable to provide a separate exhaust pipe for recovering the source gas to recover the source gas having strong toxicity.

The elevating driving unit 150 is provided below the chamber 110 to elevate the susceptor 140, and a guide hole 151a is formed in which a guide shaft 114 of the chamber 110 is inserted into a plate surface. And a moving plate 151 disposed between the lower portion of the chamber 110 and the base plate 113, and a drive shaft 152a extending and contracted by a control signal are connected to the moving plate 151, and the other end thereof is connected to the base. A plurality of driving means 152 fixed to the plate 113 and the support plate 153 which is provided in the vertical direction on the upper side of the movable plate 151 and passes through the chamber 110 to support the lower portion of the susceptor 140. It is configured to include).

On the other hand, the support 153 is made of a quartz tube (Quartz tube) formed with a through hole (153a) in the longitudinal direction in the center, the inside of the through hole (153a) for measuring the lower temperature of the susceptor 140 The temperature sensor 154 is inserted. On the other hand, the temperature sensor 154 may be applied to a thermocouple (Thermocouple).

The cooling unit 160 is provided on the upper side and the lower side of the closed space 111 of the chamber 110 to supply the cooling gas toward the substrate G. A hollow portion 161a is formed therein. A plurality of discharge ports 161b are formed toward the inner side of the chamber 110 to be connected to the supply panel 161 disposed on the upper side or the lower side of the chamber 110 and to the cooling panel 161 to supply cooling gas. Reflecting film formed on the surface of the cooling gas supply unit 162 and the substrate G of the supply panel 161 facing the substrate G to reflect the radiant heat transmitted toward the inner surface of the chamber 110 toward the substrate G. It is configured to include.

On the other hand, the supply panel 161 constituting the cooling unit 160 in the present embodiment has been described as an example that is integrally configured on the upper side and the lower side of the chamber 110, for example, but is not limited thereto. It is also possible to be fixed to the inner surface of the chamber 110 is provided.

The operation of the first embodiment of the above-described light absorption layer thin film rapid heat treatment apparatus for solar cells will now be described.

Figure 4 is a cross-sectional view of the action of the light-absorption layer thin film rapid heat treatment apparatus for solar cells of the present invention, Figure 5 is an enlarged cross-sectional view "A" part of Figure 4, Figure 6 is an enlarged cross-sectional view "B" part of FIG. 7 is an enlarged view of portion “C” of FIG. 4.

First, referring to FIG. 3, before the heat treatment of the substrate G, the heating unit 120 is disposed above and below the sealed space 111 of the chamber 110, respectively, and the upper and lower surfaces of the chamber are disposed. The cooling unit 160 is disposed in the lower portion, and the support pin 130 for supporting the lower portion of the substrate G carried into the chamber 110 is disposed below the chamber 110 in the vertical direction, and the substrate G The cover 170 and the susceptor 140 are respectively disposed on the upper and lower sides of the loading position of the upper and lower portions, and the elevating driving part 150 for elevating the susceptor 140 is disposed below the chamber 110. .

First, looking at the assembly structure of the elevating drive unit 150, the drive means 152 is installed on the base plate 113 fixed to the lower portion of the chamber 110 by two or more guide shafts 114, the moving plate ( 151 is a driving means 152 in a state in which the guide shaft 114 is inserted into the guide hole 151a of the plate surface so as to be movable along the guide shaft 114 between the chamber 110 and the base plate 113. Drive shaft 152a is connected to the upper surface of the support plate 153 which is installed in the vertical direction on the upper surface of the movable plate 151 and penetrates the lower portion of the chamber 110, and the lower end of the susceptor 140 is supported. .

The susceptor 140 is a through-hole formed in the plate surface in the state in which the support pin 130 is installed in the vertical direction in the lower portion of the closed space 111 of the chamber 110 is inserted, the approximately closed space by the lifting drive unit 150 The bottom portion of the substrate G is selectively supported by lifting up and down within the range of the lower region from the center region of the 111.

Cooling gas supply panels 161 of the cooling unit 160 are respectively provided on the upper and lower surfaces of the sealed space 111 of the chamber 110, and the supply panel 161 is provided on the outer side of the chamber 110. Cooling gas may be supplied from the cooling gas supply unit 162 connected to the cooling gas, and the cooling gas may be injected toward the substrate G after the heat treatment of the substrate G.

In the arrangement as described above, the transfer arm holding the substrate G is introduced into the chamber 110 through the door 112 formed on the side surface of the substrate G, thereby supporting the substrate G with the support pin 130. When the substrate G is loaded to the upper region of the substrate, the substrate G is supported by the support pin 130, and the bottom surface thereof is supported by the support pin 130 to be positioned in the sealed space 111 of the chamber 110.

The cover 170 is a hollow tube frame 172 of the size corresponding to the edge of the susceptor 140 is disposed in the upper region of the substrate (G), the upper side of the central opening area of the hollow tube frame 172 is covered Finished at 170, the gas supply pipe 174 for supplying the source gas to the hollow tube frame 172 is connected to the hollow tube frame 172 through the chamber 110. In addition, the cover 170 is a position where the upper edge of the susceptor 140 in contact with the bottom surface of the hollow tube frame 172 while the susceptor 140 is raised to support the lower portion of the substrate G. Is disposed in and fixed to the chamber 110 side.

Subsequently, a process of heat treating the substrate G after the substrate G is carried into the chamber 110 as described above will be described. As shown in FIG. 4, the lower portion of the sealed space 111 of the chamber 110 is shown. The susceptor 140 disposed in the area rises by the driving of the elevating driving part 150 to support the bottom portion of the substrate G, and the upper edge of the susceptor 140 has a hollow tube frame of the cover 170. Heat treatment proceeds in contact with the bottom of 172.

Looking at the operation of the lifting drive unit 150 for the rise of the susceptor 140 is as follows.

First, when the driving means 152 having one side fixed to the base plate 113 positioned below the chamber 110 is driven to extend the working shaft, the moving plate 151 connected to the working shaft moves upward. In the process is guided in the upward direction along the guide shaft 114 coupled to the guide groove.

Since the plurality of supports 153 formed in the vertical direction on the upper surface of the movable plate 151 by the rising of the movable plate 151 supports the bottom portion of the susceptor 140 in a state of passing through the chamber 110. The support 153 rises to support the lower portion of the substrate G. On the other hand, although not shown in the drawings, it is preferable to limit the moving range of the susceptor 140 by providing a sensor for detecting the upper and lower limits of the movement area of the susceptor 140.

In the state in which the susceptor 140 supports the lower portion of the substrate G as described above, the susceptor while the upper edge of the susceptor 140 contacts the bottom of the hollow tube frame 172 of the cover 170. An inner space 175 surrounding the substrate is provided between the cover 170. Subsequently, when the source gas is injected into the gas supply pipe 174 as shown in FIG. 7, the source gas is injected through the gas nozzle hole 173 formed in the inner surface of the hollow tube frame 172, and the internal space in which the substrate G is accommodated ( 175 is created in a source gas atmosphere. As described above, since the internal space provided between the susceptor 140 and the cover 170 minimizes a space for forming a source gas atmosphere for selenization or sulfidation of the substrate in the chamber, the amount of the source gas having toxicity is used. Can be minimized.

When the internal space 175 containing the substrate G is formed in a source gas atmosphere, the heating unit 120 is disposed above and below the substrate G in the sealed space 111 of the chamber 110. The substrate G is heated to perform heat treatment. At this time, the heat provided from the heating unit 120 disposed below is absorbed by the susceptor 140 made of graphite material supporting the lower portion of the substrate G, and then diffused to obtain a uniform temperature throughout the lower portion of the substrate G. Heated to.

In addition, when the panel 171 of the lid 170 is made of graphite material, the heat transferred from the heating part 120 disposed on the upper part is absorbed by the panel 171, and diffuses from the panel 171 to form the substrate G. ) Can be heated to an uniform temperature, and if the panel 171 of the cover 170 is made of quartz, it can be transmitted as it is and transmitted to the light absorbing layer provided on the upper side of the substrate G as it is. . Therefore, it is possible to heat-treat various kinds of substrates G according to the use by changing the material of the cover 170 and the panel 171 according to the use.

In the cooling gas supply panel 161 of the cooling unit 160 disposed on the upper and lower surfaces of the sealed space 111 of the chamber 110, a reflective film is formed on a surface of the cooling unit 160 that faces the substrate G, and thus the heating unit ( Since the radiant heat transmitted from the 120 toward the cooling gas supply panel 161 is reflected toward the substrate G, the utilization efficiency of thermal energy is improved.

On the other hand, the plurality of support 153 supporting the bottom surface of the susceptor 140 through the temperature sensor 154 installed in the inner through-hole 153a as shown in FIG. It is possible to measure. Therefore, the light formed on the surface of the substrate G by adjusting the amount of heat generated by the heating unit 120 respectively disposed on the upper and lower sides according to the measured temperature value of each part of the susceptor 140 provided from the temperature sensor 154. By controlling the crystallization of the absorption layer thin film it is possible to improve the quality of the product.

On the other hand, when the heat treatment of the substrate (G) is finished, the cooling gas is supplied through the cooling unit 160 disposed on the upper and lower surfaces of the closed space 111 of the chamber 110, respectively, the interior of the chamber 110 It is possible to shorten the process tack-time (Tack Time) by quickly cooling, and to shorten the time required for cooling by spraying the cooling gas evenly to the substrate (G) heated to about 500 degrees during the heat treatment process.

Looking at the cooling unit 160 disposed above with reference to Figure 7, from the cooling gas supply unit 162 provided on the outer surface in a state in which the hollow cooling gas supply panel 161 is in close contact with the inner surface of the chamber 110 The cooling gas is supplied, but a plurality of such cooling gas supply parts 162 are spaced apart from the outer surface of the supply panel 161 to prevent the concentration of the cooling gas in one region.

Subsequently, the cooling gas supplied to the hollow portion 161a of the cooling gas supply panel 161 through the cooling gas supply unit 162 is injected through a plurality of discharge ports 161b formed on the plate surface of the cooling gas supply panel 161. Since the discharge port 161b is formed on the surface facing the substrate G, the substrate G is cooled with an equal temperature distribution in a short time.

In addition, since the cooling gas supply panel 161 of the upper cooling unit 160 is disposed in the upper end of the closed space 111 of the chamber 110 in a plate-like state of the chamber 110 from the upper heating unit 120 By reflecting the radiant heat toward the inner surface, the utilization efficiency of thermal energy is improved. On the other hand, it is preferable that a reflective film is formed on the surface facing the upper heating part 120 of the discharge part to improve the reflection efficiency.

On the other hand, the cooling unit 160 disposed in the lower portion is disposed below the inner surface of the closed space 111 has the same structure as the upper cooling unit 160 to supply the cooling gas toward the lower portion of the susceptor 140. In this case, since the same operation as that of the cooling unit 160 disposed above is described, a description thereof will be omitted.

The scope of the present invention is not limited to the above-described embodiments, but may be embodied in various forms of embodiments within the scope of the appended claims. Without departing from the gist of the invention claimed in the claims, it is intended that any person skilled in the art to which the present invention pertains falls within the scope of the claims described in the present invention to various extents which can be modified.

110: chamber, 111: airtight space, 112: door, 113: base plate, 114: guide shaft,
120: heating part, 130: support pin, 140: susceptor, 150: lifting drive part, 151: moving plate,
151a: guide hole, 152: drive means, 152a: drive shaft, 153: support, 153a: through hole,
154: temperature sensor, 160: cooling unit, 161: cooling gas supply panel, 161a: hollow part,
161b: discharge port, 162: cooling gas supply unit, 170: cover, 171: panel, 172: hollow tube frame,
173: gas nozzle ball, 174: gas supply pipe, G: substrate

Claims (9)

In the solar cell light absorption layer thin film rapid heat treatment apparatus,
A chamber providing an openable and closed space;
A susceptor disposed inside the chamber to support a lower portion of the solar cell substrate;
A heating unit disposed in at least any one of an upper region and a lower region of the substrate;
A cover disposed on an upper side of the susceptor to form an inner space in which a substrate is accommodated between the susceptor; And
Includes; elevating drive unit for lifting the susceptor or cover;
The cover is connected to the gas supply pipe connected to the outside of the chamber, the inner surface of the solar cell light absorption layer thin film rapid heat treatment apparatus, characterized in that a plurality of gas nozzle holes for injecting the source gas into the closed space is formed. The method of claim 1,
The cover includes a panel closing the upper side of the susceptor, and a hollow tube frame disposed on the lower edge of the panel to be in close contact with the edge of the susceptor, wherein the gas nozzle hole is the inner surface of the hollow tube frame Solar cell light absorption layer thin film rapid heat treatment apparatus characterized in that spaced apart along. The method of claim 2,
And the panel absorbs and diffuses heat provided from a heating unit disposed in an upper region of the substrate, and is configured of a material for uniformly transferring heat to the entire surface of the substrate. The method of claim 2,
The panel is a heat absorption device thin film rapid heat treatment apparatus for a solar cell, characterized in that composed of a material that transmits heat provided from a heating unit disposed in the upper region of the substrate. The method of claim 2,
The elevating driving part includes a driving means, a movable plate which is lifted in a vertical direction by the driving means, and a plurality of supports provided in the vertical direction on the movable plate to support a lower part of the susceptor. Light absorption layer thin film rapid heat treatment device. 6. The method of claim 5,
The light absorption layer thin film rapid heat treatment apparatus for a solar cell, characterized in that it further comprises; a cooling unit provided on one of the upper side and the lower side of the chamber to supply a cooling gas toward the substrate. The method according to claim 6,
The cooling unit has a hollow part formed therein, and a plurality of discharge holes are formed toward the inner side of the chamber, the supply panel disposed on the upper side or the lower side of the chamber, and the cooling gas supply unit connected to the supply panel to supply the cooling gas. Solar cell light absorption layer thin film rapid heat treatment apparatus comprising a. 8. The method of claim 7,
The supply panel of the solar cell light absorption layer thin film rapid heat treatment apparatus, characterized in that the inner side facing the substrate is formed with a reflective film for reflecting the radiant heat transmitted from the heating portion toward the inner side of the chamber toward the substrate. 6. The method of claim 5,
The through-hole is formed in the longitudinal direction in the center of the support, the light absorbing layer thin film rapid heat treatment apparatus for a solar cell, characterized in that the temperature sensor for measuring the lower temperature of the susceptor is inserted into the through-hole.

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