KR20100058751A - Method of fabricating absorption layer of solar cell - Google Patents

Method of fabricating absorption layer of solar cell Download PDF

Info

Publication number
KR20100058751A
KR20100058751A KR1020080117267A KR20080117267A KR20100058751A KR 20100058751 A KR20100058751 A KR 20100058751A KR 1020080117267 A KR1020080117267 A KR 1020080117267A KR 20080117267 A KR20080117267 A KR 20080117267A KR 20100058751 A KR20100058751 A KR 20100058751A
Authority
KR
South Korea
Prior art keywords
se
compound
method
solar cell
sputtering
Prior art date
Application number
KR1020080117267A
Other languages
Korean (ko)
Other versions
KR101060180B1 (en
Inventor
고항주
기현철
김선훈
김태언
김회종
김효진
이병택
Original Assignee
한국광기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국광기술원 filed Critical 한국광기술원
Priority to KR1020080117267A priority Critical patent/KR101060180B1/en
Publication of KR20100058751A publication Critical patent/KR20100058751A/en
Application granted granted Critical
Publication of KR101060180B1 publication Critical patent/KR101060180B1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

PURPOSE: A manufacturing method of an absorbing layer of solar battery is provided to improve the property of the solar battery by preventing a thermal budget and improving a step coverage. CONSTITUTION: An absorbing layer(250) is formed on a substrate(240) within a vacuum chamber(200) by the sputtering process. The vacuum chamber keeps the vacuum with a pumping system(210). Sputtering targets(262, 264, 266, 268) use the selenium binary selenides or the compound in which the sulfur is added to the selenium binary selenides.

Description

Method of fabricating absorption layer of solar cell {Method of fabricating absorption layer of solar cell}

The present invention relates to a method of manufacturing an absorbing layer of a solar cell, and more particularly, to a method of manufacturing the absorbing layer of a solar cell having excellent properties when using a I-III-VI chalcogenide-based semiconductor as a material. .

Recently, as interest in alternative energy is increasing, research on low-cost and high-efficiency solar cells is being actively conducted. Current solar cells are mostly made of bulk type crystalline silicon substrates, but these solar cells have the advantages of high efficiency and reliability, but they are difficult to lower in cost, and the thickness of absorbing layer is generally about 200 ~ 300㎛. It is difficult and has the disadvantage that the process is intermittent. In contrast, thin film solar cells include amorphous silicon (a-Si), thin film polycrystalline silicon (thin film poly-Si), indium copper selenide gallium (CIGS), cadmium telluride compounds (CdTe), and organic materials. It is made of material, and the thickness of absorbing layer can be made as thin as 2 ~ 3㎛ thin, can be continuously mass produced using low cost substrates such as glass, metal or plastic, and it is a low energy consumption process. It has the advantage that it can be manufactured.

Among them, CIGS is one of the I-III-VI chalcogenide-based semiconductors represented by CuInSe 2 and has a direct transition energy band gap (Eg) of about 1.04 eV. Such chalcogenide-based semiconductors include CIGSS (Cu (In x Ga 1-x ) (Se y S 1-y ) 2 ) and CIS. The chalcogenide-based semiconductor has a high light absorption coefficient of about 1x10 5-1 and shows high efficiency when used as a light absorption thin film.In order to meet the ideal bandgap of 1.40eV, part of Ga is replaced with In and Se is replaced with S. You may. For reference, the energy band gap of 1.6eV is CuGaSe 2, CuGaS 2 is an energy band gap of 2.5eV. Such materials can be easily controlled by the bandgap only by controlling the composition of the constituent elements constituting the compound, and have high reliability since they have a long-term stability of more than 10 years.

1 is a cross-sectional view showing an example of a conventional thin film solar cell. Referring to FIG. 1, the thin film solar cell 10 includes a metal back electrode 110, an absorbing layer 120, a buffer layer 130, and a window on a sodaime glass substrate 100 having a thickness of 2 to 3 mm. The layer 140 and the upper electrode 150 are sequentially stacked. The metal back electrode 110 is formed by sputtering an Mo layer having a thickness of about 1 μm, and the absorption layer 120 forms a CIGS layer having a thickness of about 2 μm to 3 μm. As the buffer layer 130, a CdS layer having a thickness of about 50 nm formed by a chemical bath deposition (CBD) is used. As the window layer 130, an n-type ZnO: Al layer of about 50 nm formed by sputtering is used. In the thin film solar cell 10 having such a structure, the absorbing layer 120 is formed mainly by applying co-evaporation to a metal element or a binary compound, or co-sputtering a Cu-In-Ga alloy. After formation, the Se pellets are heated by halogen lamps to form selenide Cu-In-Ga alloys. However, when the absorption layer 120 is formed by the evaporation method, the thermal budget may be a problem because the temperature is higher than that of the sputtering process, and the evaporation method may be applied only to a specific material such as a metal. The difference is that sputtering is applicable to any material. In addition, sputtering is superior to the evaporation method in terms of step coverage, radioactive damage, and generation of pollutants. On the other hand, since the process of forming a Cu-In-Ga alloy by simultaneous sputtering and selenizing it is to form the absorbing layer 120 by two separate processes, the process is not only complicated but also when moving between equipments. There is a fear that the already formed Cu-In-Ga alloy is contaminated. In addition, when controlling the Se content through the Se pellet, it also has the disadvantage that it is difficult to precisely control the composition of Se in the CIGS layer.

Therefore, the problem to be solved by the present invention, in manufacturing the absorbing layer of the solar cell, can proceed in a single process without applying excessive heat to prevent the occurrence of contamination, it is possible to easily precisely control the composition of each component element It is to provide a method for producing an absorbing layer of a solar cell.

The present invention for solving the above technical problem, relates to a method for producing a compound solar cell by forming Cu (In, Ga, Al) (Se, S) 2 on the substrate as an absorption layer, selenium binary compound or The absorption layer of Cu (In, Ga, Al) (Se, S) 2 is formed by sputtering using the compound which sulfur was added to the selenium binary compound as a target.

According to the present invention, it is possible to provide a method of manufacturing an absorbing layer of a solar cell, which does not cause a problem in thermal budget, but also provides superior solar cell absorbing layer in terms of step coverage, radiation damage, and generation of pollutants. The characteristics of the manufactured solar cell can be improved, and the unit cost thereof can be lowered.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following examples are only presented to understand the content of the present invention, and those skilled in the art will be capable of many modifications within the technical spirit of the present invention. Therefore, the scope of the present invention should not be construed as being limited to these examples.

2 is a view for explaining a method for manufacturing an absorbing layer of a solar cell according to the present invention. Referring to FIG. 2, a Cu (In, Ga, Al) (Se, S) 2 sputtering process is performed on a substrate 240 in a vacuum chamber 200 in which a vacuum is maintained therein by a pumping system 210. Thereby forming an absorbing layer 250. In the sputtering process, a selenium binary compound or a compound in which sulfur is added to the selenium binary compound is used as the sputtering targets 262, 264, 266, and 268. More specifically, reference numeral 262 is a Cu x Se y or Cu x (Se, S) y target, reference 264 is an Al x Se y or Al x (Se, S) y target, and 266 is In. x Se y or In x (Se, S) y target, and reference numeral 268 is a Ga x Se y or Al x (Se, S) y target. In the manufacturing method of this embodiment, a separate power (not shown) is applied to each target to control the band gap of the absorbing layer by adjusting the composition of the component elements of the absorbing layer to be formed. Meanwhile, during the sputtering process, a rotation system 220 is provided to heat the substrate 240 by the heater 230 and rotate the substrate 240 horizontally to form an absorption layer 250 having a uniform thickness. The uniformity of the absorbing layer 250 is increased. When sputtering targets of selenide compounds serving as the material of the absorbing layer in the apparatus, and manufacturing the absorbing layer on the substrate, the process is simple because there is no separate selenization step, and the composition control of the element of the absorbing layer is easy. It is easy to achieve the bandgap adjustment through it.

1 is a cross-sectional view showing an example of a conventional thin film solar cell; And

2 is a view for explaining a method for manufacturing an absorbing layer of a solar cell according to the present invention.

Explanation of reference numerals for main parts of the drawings

100, 240: substrate

110: metal back electrode

120, 250: absorption layer

130: buffer layer

140: window layer

150: upper electrode

200: vacuum chamber

210: pumping system

220: rotating system

230: heater

262, 264, 266, 268: sputtering targets

Claims (6)

  1. In a method of manufacturing a compound solar cell by forming Cu (In, Ga, Al) (Se, S) 2 as an absorption layer on a substrate, sputtering using a selenium binary compound or a compound in which sulfur is added to the selenium binary compound as a target A method for producing a compound solar cell, comprising: forming an absorption layer of Cu (In, Ga, Al) (Se, S) 2 .
  2. The method of claim 1, wherein the selenium binary compound is Cu x Se y , In x Se y , Ga x Se y, and Al x Se y .
  3. The compound of claim 1, wherein sulfur is added to the selenium binary compound, wherein Cu x (Se, S) y , In x (Se, S) y , Ga x (Se, S) y, and Al x (Se, S) y is a method for producing a compound solar cell.
  4. The method of claim 2 or 3, wherein the sputtering is performed by simultaneous sputtering to apply separate power to the selenium binary compound or the compound to which sulfur is added to the selenium binary compound to control the band gap of the absorbing layer. Method for producing a compound solar cell.
  5. The method for producing a compound solar cell according to claim 2 or 3, wherein the sputtering is performed during heating by a heater.
  6. The method of claim 1, further comprising rotating the substrate horizontally during the sputtering.
KR1020080117267A 2008-11-25 2008-11-25 Method of manufacturing absorbing layer of solar cell KR101060180B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080117267A KR101060180B1 (en) 2008-11-25 2008-11-25 Method of manufacturing absorbing layer of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080117267A KR101060180B1 (en) 2008-11-25 2008-11-25 Method of manufacturing absorbing layer of solar cell

Publications (2)

Publication Number Publication Date
KR20100058751A true KR20100058751A (en) 2010-06-04
KR101060180B1 KR101060180B1 (en) 2011-08-29

Family

ID=42360158

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080117267A KR101060180B1 (en) 2008-11-25 2008-11-25 Method of manufacturing absorbing layer of solar cell

Country Status (1)

Country Link
KR (1) KR101060180B1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012064000A1 (en) * 2010-11-12 2012-05-18 영남대학교 산학협력단 Preparation method of cigs solar absorption layer
WO2012165860A3 (en) * 2011-05-31 2013-03-28 Korea Institute Of Energy Research METHOD OF MANUFACTURING CIGS THIN FILM WITH UNIFORM Ga DISTRIBUTION
US8546176B2 (en) 2010-04-22 2013-10-01 Tsmc Solid State Lighting Ltd. Forming chalcogenide semiconductor absorbers
WO2014042319A1 (en) * 2012-09-17 2014-03-20 한국생산기술연구원 Cis/cgs/cigs thin film manufacturing method and solar cell manufactured by using same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101273179B1 (en) * 2011-09-20 2013-06-17 엘지이노텍 주식회사 Solar cell and method of fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3639453B2 (en) 1999-03-16 2005-04-20 松下電器産業株式会社 Compound semiconductor thin film manufacturing apparatus and compound semiconductor thin film manufacturing method using the same
JP4288641B2 (en) * 2000-08-17 2009-07-01 本田技研工業株式会社 Compound semiconductor deposition system
JP3831592B2 (en) 2000-09-06 2006-10-11 松下電器産業株式会社 Method for producing compound semiconductor thin film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546176B2 (en) 2010-04-22 2013-10-01 Tsmc Solid State Lighting Ltd. Forming chalcogenide semiconductor absorbers
WO2012064000A1 (en) * 2010-11-12 2012-05-18 영남대학교 산학협력단 Preparation method of cigs solar absorption layer
WO2012165860A3 (en) * 2011-05-31 2013-03-28 Korea Institute Of Energy Research METHOD OF MANUFACTURING CIGS THIN FILM WITH UNIFORM Ga DISTRIBUTION
CN103548153A (en) * 2011-05-31 2014-01-29 韩国能源技术研究院 Method of manufacturing CIGS thin film with uniform Ga distribution
WO2014042319A1 (en) * 2012-09-17 2014-03-20 한국생산기술연구원 Cis/cgs/cigs thin film manufacturing method and solar cell manufactured by using same

Also Published As

Publication number Publication date
KR101060180B1 (en) 2011-08-29

Similar Documents

Publication Publication Date Title
Braunger et al. An 11.4% efficient polycrystalline thin film solar cell based on CuInS2 with a Cd-free buffer layer
US8003430B1 (en) Sulfide species treatment of thin film photovoltaic cell and manufacturing method
US20100267190A1 (en) Laminated structure for cis based solar cell, and integrated structure and manufacturing method for cis based thin-film solar cell
JP2008520102A (en) Method and photovoltaic device using alkali-containing layer
JP2008520101A (en) Thermal process for producing in-situ bonding layers in CIGS
Ramanujam et al. Copper indium gallium selenide based solar cells–a review
Noufi et al. High-efficiency CdTe and CIGS thin-film solar cells: highlights and challenges
US20130037100A1 (en) Thin Film Photovoltaic Solar Cells
KR20100073717A (en) Solar cell and method of fabricating the same
CN101094726A (en) Thermal process for creation of an in-situ junction layer in cigs
US20110018089A1 (en) Stack structure and integrated structure of cis based solar cell
Lokhande et al. Development of Cu2SnS3 (CTS) thin film solar cells by physical techniques: A status review
CN102237439B (en) Solar battery manufacturing method
JP2013522910A (en) Photoelectroactive chalcogen-based thin film structure including a bonding layer
US8628997B2 (en) Method and device for cadmium-free solar cells
US8431430B2 (en) Method for forming a compound semi-conductor thin-film
JP2010192689A (en) Solar cell, and method of manufacturing the same
US8586457B1 (en) Method of fabricating high efficiency CIGS solar cells
JP2004015039A (en) Compound thin film solar cell and method for manufacturing the same
KR101245371B1 (en) Solar cell and method of fabricating the same
JP2011100976A (en) Photoelectric conversion element, method of manufacturing the same, and solar cell
US8252621B2 (en) Method for forming copper indium gallium chalcogenide layer with optimized gallium content at its surface
US20140113403A1 (en) High efficiency CZTSe by a two-step approach
US20130164885A1 (en) Absorbers For High-Efficiency Thin-Film PV
JP2014513413A (en) Method for producing ternary compound semiconductor CZTSSe and thin film solar cell

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20140715

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20150630

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20160729

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20170725

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20180730

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20190809

Year of fee payment: 9