KR101452332B1 - Apparatus for processing substreat - Google Patents

Abstract

An apparatus for processing a substrate is disclosed. According to the present invention, all parts of a heater are disposed inside a main body. Therefore, the present invention prevents gas in a chamber from leaking to the outside of the main body by the heater even though the heater is damaged. When the maintenance of the heater is required, it is simple to separate a support plate detachably coupled to a support bar and then to repair the heater, thereby providing a useful effect of maintenance.

Description

[0001] APPARATUS FOR PROCESSING SUBSTREAT [0002]

The present invention relates to a substrate processing apparatus for forming a CIGS layer by a selenization process.

Today, in order to reduce dependence on depleted fossil fuels, research and development on solar cells utilizing environmentally friendly solar energy as well as exhaustion of concern are underway.

As a part of this research and development, CIGS {Cu (In _1-x Ga _x ) Se (Ce)), which has high absorption rate of sunlight, less deterioration of sunlight or radiation, ₂ } layer formed on the surface of the substrate.

The thin film solar cell includes a substrate such as a glass substrate, a (+) electrode layer formed of a metal layer formed on the substrate, a p-type CIGS layer formed on the electrode layer and absorbing light, an n-type buffer layer formed on the CIGS layer, Layered structure including a transparent electrode layer having a negative (-) polarity.

Thus, when sunlight is incident through the transparent electrode layer, which is a light receiving portion, a pair of excited electrons and holes having a band gap energy of about 1.04 eV are generated near the p-n junction. Then, the excited electrons and holes reach the p-n junction by diffusion, and electrons are collected in the n region and the holes are collected in the p region by the internal electric field of the junction.

Then, the n region is negatively charged, the p region is positively charged, and a potential difference is generated between the electrodes formed in the respective regions. A photocurrent is obtained when the potential difference is used as an electromotive force and the respective electrodes are connected by a lead wire.

A method for forming a CIGS layer of a thin film solar cell includes a precursor film forming step of forming a precursor film by vacuum sputtering an element of copper, indium and gallium at an appropriate ratio on an electrode layer formed on a substrate, And a selenization process is performed in which hydrogen (H ₂ Se) gas is flowed and a temperature is applied to the substrate. Cu (Cu), indium (In), gallium (Ga) and selenium (Se) elements are formed in accordance with such a series of steps to form a CIGS {Cu (In _{1 - x} Ga _x ) Se ₂ } .

In this selenization process, the substrate on which the precursor film is formed is loaded into a closed chamber, the chamber is replaced with an inert gas, hydrogen selenide (H ₂ Se) as a process gas is introduced into the chamber, For a predetermined time to form a selenized CIGS layer.

A conventional substrate processing apparatus for forming a CIGS layer includes a body having a chamber, which is a space in which a substrate is processed, and a heater installed in the body to generate heat required for processing the substrate.

At this time, the heater is formed in a bar shape and one side end or both end side sides of the heater are supported by the main body, and one end or both ends of the heater are exposed to the outside of the main body.

In such a conventional substrate processing apparatus, the end of the heater is supported by the main body and exposed to the outside of the main body. Therefore, when the heater is broken, gas may leak through the contact portion between the heater and the main body .

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art as described above, and it is an object of the present invention to provide a heat exchanger in which the entire portion of the heater is positioned inside the main body, And a substrate processing apparatus.

According to an aspect of the present invention, there is provided a substrate processing apparatus comprising: a main body having a chamber formed therein for processing a substrate; And a heater installed in the main body, wherein all parts of the heater are located inside the main body.

In the substrate processing apparatus according to the present invention, all portions of the heater are located inside the main body. Therefore, even if the heater is broken, there is an effect that the gas in the chamber is not leaked to the outside of the main body due to the heater.

In addition, when maintenance of the heater is required, the heater can be repaired after removing the support plate detachably coupled to the support bar, so that the maintenance is very convenient.

1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention;
FIG. 2 is an enlarged perspective view of the main body of the substrate processing apparatus and the door shown in FIG. 1; FIG.
3 is an enlarged perspective view of the inner body shown in Fig.
FIG. 4 is a perspective view showing the installation structure of the heater shown in FIG. 3; FIG.
5A and 5B are enlarged views of the "A" portion and the "B" portion of FIG.

DETAILED DESCRIPTION OF THE INVENTION The following detailed description of the invention refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are mutually exclusive, but need not be mutually exclusive. For example, certain features, specific structures, and features described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with one embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled. The length, area, thickness, and shape of the embodiments shown in the drawings may be exaggerated for convenience.

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

In the following description, the substrate processing apparatus in accordance with one embodiment of the present invention will be described, for CIGS {Cu (In1-xGax) Se 2} layer forming apparatus as an example.

FIG. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged perspective view of a main body and a door of the substrate processing apparatus shown in FIG. 1, It is a perspective view.

As shown in the figure, the substrate processing apparatus according to the present embodiment includes a main body 110 forming an external appearance, and the main body 110 includes an internal body 111 and an external body 115 surrounding the internal body 111 .

A chamber 110a which is a space in which a substrate 50 such as a glass is loaded and processed is formed in the inner body 111 of the body 110. An inlet / (110b). The entrance 110b may include an inner entrance 110ba formed in the front of the inner body 111 and an outer entrance 110bb formed in the front of the outer body 115 so as to face the inner entrance 110ba.

A door 120 for opening and closing the entrance 110b is provided on the outside of the front surface of the external body 115. The door 120 is supported by the support frame 130 and is slidably installed in the left-right direction and the front-rear direction of the main body 110.

That is, the door 120 is slid in the left-right direction of the main body 110, and faces the entrance 110b or is located outside the entrance 110b. When the door 120 faces the entrance 110b, the door 120 slides in the front-rear direction of the main body 110 and opens and closes the entrance 110b. When the door 110b is closed by the door 120, the chamber 110a is closed and the chamber 110a is opened when the door 110a is opened.

Since the gas flowing into the chamber 110a during the processing of the substrate 50 contains a harmful gas to the human body, a safety accident may occur if gas introduced into the chamber 110a leaks to the outside of the main body 110. [ A sealing member (not shown) for sealing between the main body 110 and the door 120 may be installed on the rear surface of the door 120 in contact with the front surface of the main body 110 outside the entrance 110b. have.

A heater 140 for heating the substrate 50 is installed on the inner side surface, the front and rear surfaces, and the upper and lower surfaces of the inner body 111 of the main body 110. The heater 140 will be described later.

A heater (not shown) may also be provided on the outer surface of the inner body 111. The heater heats the inner body 111 to prevent the inner body 111 from falling to a predetermined temperature or lower. When the inner body 111 is lowered to a predetermined temperature or less, the process gas may be adhered to the inner surface of the inner body 111. To prevent this, the heater is installed.

A cooling pipe (not shown) may be installed on the outer surface of the inner body 111. The cooling tube cools the inner body 111 to prevent the inner body 111 from being corroded by the gas at high temperatures.

A plurality of substrates 50 are stored in a boat 60, and a plurality of boats 60 are loaded in a chamber 110a. That is, the substrate 50 is loaded into the chamber 110a while being stored in the boat 60 and processed.

A fan (not shown) may be installed on the inner surface of the inner body 111. The fan allows a uniform airflow to be supplied to each substrate 50.

The substrate 60 on which the electrode layer and the precursor film made of copper, indium and gallium formed in the proper element ratio is formed is supported on the boat 60 and then the boat 60 is loaded into the chamber 110a, . In this state, a nitrogen gas is introduced into the chamber 110a, a selenization gas (H ₂ Se) is injected to form a CIGS layer at a predetermined temperature, and a CIGS layer is formed. Then, H ₂ S) is implanted to process the CIGS layer formed on the substrate 50.

The substrate processing apparatus according to the present embodiment can prevent the gas introduced into the chamber 110a from leaking to the outside of the main body 110 even if the heater 140 is damaged, As shown in FIG.

The mounting structure of the heater 140 will be described with reference to Figs. 3 and 4. Fig. 4 is an enlarged perspective view showing the installation structure of the heater shown in Fig.

As shown, the heater 140 has a constant pattern, and the overall shape is a plate shape. At this time, the pattern of the heater 140 may be variously shaped such as a shape in which a straight line is repeated continuously, a shape in which a curve is repeated continuously, a shape in which a " c "shape is continuously repeated or a shape in which a" .

In order to maintain a uniform temperature for each compartment of the chamber 110a, it is preferable that the heater 140 is divided into a plurality of zones and controlled independently of each other.

A plurality of support bars 151 are provided on the inner surface of the inner body 111 of the main body 110. A support plate 153 is supported by the support bar 151. The support plate 153 is formed in a shape corresponding to the overall contour of the heater 140 and can be supported by the support bar 151 and formed in a shape corresponding to the partitioned heater 140, Can be supported.

A ring-shaped engagement groove 151a is formed in the outer peripheral surface of the support bar 151 so that the support plate 153 can be coupled to the support bar 151 and inserted into the engagement groove 151a in the support plate 153 A latching hole 153a is formed. Therefore, the support plate 153 is detachably supported on the support bar 151.

The heater 140 is coupled to the support plate 153 side by a fastening member 155 having a washer and a bolt. At this time, the bolts of the fastening member 155 are coupled to the support plate 153 through the gap existing in the heater 140, and the washer of the fastening member 155 presses the heater 140 toward the support plate 153 . Therefore, the heater 140 is supported on the support plate 153 side.

The atmosphere of the chamber 110a in which the substrate 50 is processed is close to a vacuum, and the heater 140 is at a high temperature. Thus, when the heater 140 and the support plate 153 come into contact with each other, a vacuum discharge may occur. In order to prevent this, a spacer 157 of a ceramic material for separating the heater 140 from the support plate 153 may be installed on the support plate 153. The bolt of the fastening member 155 is fastened to the spacer 157, and the heater 140 contacts the spacer 157.

A heat insulating plate (not shown) may be provided between the inner surface of the inner body 111 of the main body 110 and the support plate 153. The heat insulating plate may be supported and coupled to the support bar 151 in the same manner as the coupling structure of the support bar 151 and the support plate 153.

In the substrate processing apparatus according to the present embodiment, all portions of the heater 140 are positioned inside the inner body 111 of the main body 110. Therefore, even if the heater 140 is broken, the gas in the chamber 110a is not leaked to the outside of the main body 110 due to the heater 140. [

When the maintenance of the heater 140 is required, the heater 140 can be repaired after removing the support plate 153 detachably coupled to the support bar 151, so maintenance is very convenient.

The substrate processing apparatus according to the present embodiment is provided with a plurality of contact units for closely contacting the door 120 to the main body 110 side so as to prevent gas from leaking through the gap between the door 120 and the main body 110, Will be described with reference to FIG. 5A and 5B are enlarged views of the "A" part and the "B" part in FIG.

As shown in the figure, the tight fitting unit is coupled to the cylinder 161 provided on the front portion of the outer body 115 of the body 110 outside the entrance 110b, the end of the piston 161a of the cylinder 161 And a support roller 163 for pressing and supporting the front edge of the door 120 to the front side of the main body 110 while linearly moving by the piston 161a.

At this time, a pressing plate 165 for contacting the supporting roller 163 may be provided on the front edge of the door 120, and a portion of the pressing plate 165 for contacting the supporting roller 163 may be provided on the door 120, As shown in FIG.

Then, the support roller 163 moves from the outer side to the center side of the door 120 by the piston 161a, and comes into contact with the thick part through the thin portion of the pressing plate 165, 165 are pressed toward the front side of the main body 110, the door 120 is brought into close contact with the front side of the main body 120. [

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, Various variations and modifications are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

110:
120: Door
140: heater
151: Support bar
153: Support plate
157: Spacer

Claims (9)

A main body having a chamber in which a substrate is processed; And
And a heater installed in the main body,
All parts of the heater are located inside the body,
A plurality of support bars are provided on the inner surface of the main body,
A support plate detachably supported on the support bar,
Wherein the heater is coupled to the support plate side. The method according to claim 1,
Wherein the heater has a pattern and an overall outer shape is formed in a plate shape. 3. The method of claim 2,
Wherein the heater is divided into a plurality of zones and controlled independently of each other. delete The method according to claim 1,
A ring-shaped engagement groove is formed in the outer peripheral surface of the support bar,
Wherein the supporting plate is formed with a latching hole inserted and retained in the latching groove. 6. The method of claim 5,
Wherein a heat insulating plate is provided between an inner surface of the main body and the support plate. 6. The method of claim 5,
Wherein the support plate is provided with a spacer for separating the support plate from the heater,
Wherein the heater is in contact with the spacer. The method according to claim 1,
A pressing plate is provided on the edge side of the door,
A cylinder is provided on a front surface portion of the body corresponding to the pressing plate,
Wherein a support roller is provided on an end side of the piston of the cylinder to linearly move by the piston and to press the front edge of the door toward the body. 9. The method of claim 8,
Wherein a portion of the pressing plate, on which the supporting roller contacts, is inclined in such a manner that its thickness becomes gradually thinner toward the outer side from the center side of the door.

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