KR20130054517A - Light emitting device package and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A light emitting device package and a method for manufacturing the same are provided to simplify a process by successively growing a reflection layer and a heat radiation layer from a seed layer. CONSTITUTION: A seed layer(310) is exposed by selectively patterning a photoresist layer(320). A reflection layer(330) is formed on the seed layer. A heat radiation layer(350) is formed on the reflection layer. The photoresist layer is removed. A light emitting device is separated from a supporter(300).

Description

LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME}

The embodiment relates to a light emitting device package and a method of manufacturing the same.

BACKGROUND ART Light emitting devices such as a light emitting diode (LD) or a laser diode using semiconductor materials of Group 3-5 or 2-6 group semiconductors are widely used for various colors such as red, green, blue, and ultraviolet And it is possible to realize white light rays with high efficiency by using fluorescent materials or colors, and it is possible to realize low energy consumption, semi-permanent life time, quick response speed, safety and environment friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps .

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

The light emitting device emits light having energy determined by an energy band inherent in a material in which electrons injected through the first conductive semiconductor layer and holes injected through the second conductive semiconductor layer meet each other to form an active layer (light emitting layer). do. In the light emitting device package, the phosphor is excited by the light emitted from the light emitting device to emit light having a longer wavelength region than the light emitted from the active layer.

1 is a view showing a conventional light emitting device package.

In the conventional light emitting device package, the light emitting device 100 is coupled to the package body 220 through the coupling layer 210, and a pair of lead frames may be disposed on the package body 220. The package body 220 may be made of a metal having excellent thermal conductivity to act as a heat dissipation layer.

The conventional light emitting device package requires an additional process because the bonding layer 210 couples the light emitting device 100 and the package body 220, and the bonding force may be weak due to the difference in the interfacial properties of different materials.

The embodiment is intended to enhance the bonding force between the light emitting device and the package body, and to simplify the manufacturing process of the light emitting device package.

Embodiments include fixing the light emitting device to the supporter; Forming a seed layer on the first surface of the light emitting device; Coating a photosensitive film on the light emitting device; Selectively patterning the photoresist to expose the seed layer; Forming a reflective layer on the seed layer; Forming a heat dissipation layer on the reflective layer; And removing the photosensitive film and separating the light emitting device from the supporter.

The seed layer may be formed by a gold plating method.

The forming of the reflective layer may include growing aluminum or silver on the seed layer and growing an interfacial layer on the aluminum or silver.

The heat dissipation layer can be formed by a copper plating method.

The fixing of the light emitting device to the supporter may fix the second surface of the light emitting device to the supporter using an adhesive.

The coating of the photosensitive film may include forming the photosensitive film on the sidewall of the light emitting device, and the photosensitive film formed on the sidewall of the light emitting device may be formed to become thinner toward the first surface of the light emitting device. have.

The reflective layer may be formed along the step of the photosensitive film.

Dicing the heat dissipating layer in each device unit after the step of forming the heat dissipating layer may be further included.

Another embodiment includes a heat dissipation layer having a cavity structure; A reflective layer formed on the surface of the cavity; A light emitting element disposed on the reflective layer; And it provides a light emitting device package comprising a seed layer between the reflective layer and the light emitting device.

The seed layer may comprise gold.

The reflective layer may be made of silver or aluminum.

The reflective layer may further include an interface layer, and the interface layer may include nickel and gold.

The heat dissipation layer may be formed by plating copper.

In the light emitting device package according to the embodiment, the bonding force between the light emitting device and the package body is enhanced, and the manufacturing process is simplified.

1 is a view showing a conventional light emitting device package,
2 is a view showing an embodiment of a light emitting device package,
3 is a view showing an embodiment of a light emitting device disposed in the light emitting device package of FIG.
4 is a view showing another embodiment of a light emitting device disposed in the light emitting device package of FIG.
5a to 10 are views showing an embodiment of a method of manufacturing a light emitting device package,
11 is a view illustrating an embodiment of a lighting device in which a light emitting device package is disposed;
12 is a diagram illustrating an embodiment of an image display apparatus in which a light emitting device package is disposed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the (up) or down (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

2 is a view showing an embodiment of a light emitting device package.

In the light emitting device package according to the embodiment, the heat dissipation layer 350 has a cavity structure, a reflective layer 330 is formed on the bottom and sidewalls of the cavity, and the light emitting layer package emits light on the reflective layer 330 corresponding to the bottom surface of the cavity. Element 100 is disposed.

The light emitting device 100 is in contact with the reflective layer 330 through the seed layer 310. The seed layer 310 is a bottom surface of the light emitting device 100, for example, a sapphire substrate in the case of a horizontal light emitting device, and a vertical type In the case of the light emitting device, the conductive support substrate is formed below, and the reflective layer 330 is grown from the seed layer 310 by plating or the like.

The reflective layer 330 may be formed of a single layer, but may be formed of a multilayered structure, in which aluminum (Al) or silver (Ag) is grown from the seed layer 310 and in turn, nickel (Ni) and Gold may be growing. Nickel and gold mentioned above can be called an interface layer.

Aluminum or silver may reflect light emitted from the light emitting device 100, and nickel and gold may be formed to mitigate interface characteristics between different materials between the aluminum or silver and the heat dissipation layer 350.

The heat dissipation layer 350 may be made of a material having excellent heat transfer characteristics such as copper (Cu), and the cavity formed in the heat dissipation layer 350 may be disposed with the inclined sidewall. The reflective layer 330 formed on the bottom surface and the sidewall of the cavity may have a uniform thickness, and thus the sidewall of the reflective layer 330 may have an inclination. The inclination of the sidewall of the reflective layer 330 may be formed by convexly forming the reflective layer 330 in the interior direction of the cavity.

In the light emitting device package according to the embodiment, when the reflective layer and the heat dissipation layer are sequentially grown from the seed layer plating-grown on one surface of the light emitting element, and the bonding force between the light emitting element and the heat dissipation layer is strong, the heat dissipation layer made of a conductive material may act as a lead frame. .

3 is a diagram illustrating an embodiment of a light emitting device disposed in the light emitting device package of FIG. 2.

The light emitting device 100a according to the present exemplary embodiment is formed by stacking a bonding layer 160, a reflective layer 150, an ohmic layer 140, and a light emitting structure 130 on a conductive support substrate (metal support) 170.

Since the conductive support substrate 170 may serve as a second electrode, a metal having excellent electrical conductivity may be used, and a metal having high thermal conductivity may be used because it must be able to sufficiently dissipate heat generated when the light emitting device is operated.

The conductive support substrate 170 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al) or alloys thereof. , Gold (Au), copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafers (e.g. GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O _3, etc.) may be optionally included.

In addition, the conductive support substrate 170 may have a mechanical strength enough to be separated into a separate chip through a scribing process and a breaking process without bringing warpage to the entire nitride semiconductor. have.

Gold (Au) may be formed below the conductive support substrate 170 by a plating method to act as a seed layer when the reflective layer is grown in the manufacturing process of the light emitting device package.

The bonding layer 160 may combine the reflective layer 150 and the conductive support substrate 170, and the reflective layer 150 may function as an adhesion layer. The bonding layer 160 is composed of gold (Au), tin (Sn), indium (In), aluminum (Al), silicon (Si), silver (Ag), nickel (Ni) and copper (Cu) It may be formed of a material selected from or alloys thereof.

The reflective layer 150 may be about 2500 angs thick. The reflective layer 150 may be formed of a metal layer including aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, or Rh. have. Aluminum or silver may effectively reflect light generated from the active layer 134 to greatly improve the light extraction efficiency of the light emitting device.

Since the light emitting structure 130, in particular, the second conductive semiconductor layer 136 has a low impurity doping concentration and a high contact resistance, and thus may have poor ohmic characteristics, the ohmic layer 140 may be improved. Transparent electrodes and the like can be formed.

The ohmic layer 140 may be about 200 angstroms thick. The ohmic layer 140 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin (IGTO). oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt At least one of Au, Hf, and the like may be formed, and the material is not limited thereto.

The light emitting structure 130 is formed on the first conductive semiconductor layer 132 and the first conductive semiconductor layer 132 and the active layer 134 for emitting light and the second layer formed on the active layer 134. And a conductive semiconductor layer 136.

The first conductivity type semiconductor layer 132 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant, and when the first conductivity type semiconductor layer 132 is an N-type semiconductor layer, The first conductive dopant may be an N-type dopant and may include Si, Ge, Sn, Se, or Te, but is not limited thereto.

The first conductive semiconductor layer 132 may include a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It may include. The first conductive semiconductor layer 132 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

In the active layer 134, electrons injected through the first conductive semiconductor layer 132 and holes injected through the second conductive semiconductor layer 136 formed thereafter meet each other to form an energy band unique to the active layer (light emitting layer) material. The layer may emit light having energy determined by the light, and the light emitted from the active layer 134 may emit light in the ultraviolet region in addition to the visible region.

The active layer 134 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. For example, the active layer 134 may be formed by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The well layer / barrier layer of the active layer 134 is formed of one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. But it is not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A conductive cladding layer (not shown) may be formed on or under the active layer 134. The conductive clad layer may be formed of an AlGaN-based semiconductor, and may have a higher band gap than the band gap of the active layer 134.

The second conductive type semiconductor layer 136 is a second conductive type dopant is doped III-V compound semiconductor, for example _{-5, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤ And 1, 0 ≦ x + y ≦ 1). When the second conductive semiconductor layer 136 is a P-type semiconductor layer, the second conductive dopant may be a P-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The first electrode 180 may be formed on the light emitting structure 130, that is, on the surface of the first conductivity-type semiconductor layer 132, and may include aluminum (Al), titanium (Ti), chromium (Cr), and nickel ( Ni), copper (Cu), and gold (Au) may be formed to have a single layer or a multilayer structure.

A passivation layer 190 may be formed on the side surface of the light emitting structure 130.

The passivation layer 190 may be made of an insulating material, and the insulating material may be made of an oxide or nitride that is non-conductive. As an example, the passivation layer 190 may be formed of a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

4 is a diagram illustrating another embodiment of a light emitting device disposed in the light emitting device package of FIG. 2.

According to the present embodiment, a horizontal light emitting device 100b is shown. The mesa-etched portion of the second conductive semiconductor layer 136, the active layer 134, and the first conductive semiconductor layer 132 may be mesa-etched. A portion of the single conductive semiconductor layer 132 is exposed. That is, when the substrate 110 is formed of an insulating material, it is to secure a space where an electrode is to be formed to supply a current to a portion of the first conductivity-type semiconductor layer 132.

Gold (Au) may be formed on the lower portion of the substrate 110 by a plating method to act as a seed layer when the reflective layer is grown in the manufacturing process of the light emitting device package.

A buffer layer 120 may be formed between the substrate 110 and the light emitting structure 130. The buffer layer 120 may have a lattice mismatch and thermal expansion coefficient of a material between the light emitting structure 130 and the substrate 110, which will be described later. To alleviate the difference. The material of the buffer layer 120 may be formed of at least one of Group III-V compound semiconductors, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

A transmissive conductive layer 175 is disposed on the light emitting structure 130 to improve contact characteristics between the second conductive semiconductor layer 136 and the second electrode 185, and the translucent conductive layer 175 is formed of ITO. Or the like.

The first electrode 180 is disposed on the exposed first conductive semiconductor layer 132. The first electrode 180 may be formed in a single layer or a multilayer structure including at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). Can be.

In addition, the second electrode 185 may be disposed on the transparent conductive layer 175, and the second electrode 185 may be made of the same material as the first electrode 180.

5A to 10 are views illustrating one embodiment of a method of manufacturing a light emitting device package.

As shown in FIG. 5A, a plurality of light emitting devices 100 are disposed in the supporter 300, and each light emitting device 100 may be fixed to the supporter 300 through an adhesive 305. The seed layer 310 is formed on the first surface of the light emitting device 100, and the second surface opposite to the first surface is coupled to the supporter 300 through the adhesive 305.

The seed layer 310 may grow Au (gold) by plating or the like. The seed layer 310 may be grown before or after the light emitting device 100 is fixed to the supporter 300. .

5B is a top view of FIG. 5A. The light emitting device array is disposed on the supporter 300, and only the seed layer 310 disposed on the light emitting device is illustrated. In FIG. 5B, three light emitting devices are disposed in the horizontal and vertical directions, respectively, but a larger number of light emitting devices may be disposed to simultaneously grow the reflective layer and the heat dissipating layer.

In FIG. 6, a photoresist 320 is formed on each light emitting device 100 disposed in the supporter 300. The photosensitive film 320 may be applied to a region between each light emitting device 100 and the light emitting device 100 by coating or the like. Since the seed layer 310 is formed on the first surface of each light emitting device 100, the photoresist layer 320 may be coated on the seed layer 310, and may be disposed between the light emitting devices 100. The height can be applied low.

In the enlarged view 'A' of FIG. 6, the surface S of the photoresist layer 320 is curved on the side surface of the light emitting device 100, and the reflective layer may be curved in a process of forming a reflective layer, which will be described later. . That is, when the surface S of the photosensitive film 320 is concave as shown, the reflective layer 330 described later may have a convex slope in the direction of the cavity.

When the photoresist film is laminated by a method such as a coating, the photoresist film applied to the edge of the light emitting device 100 may partially flow down and be formed thicker than other regions as shown in FIG. 7.

The shape of the photosensitive film 320 is closely related to the shape of the reflective layer to be described later, and the shape of the photosensitive film may be adjusted by applying the photosensitive film several times in addition to the method of forming a naturally curved surface as described above.

As shown in FIG. 7, the photoresist layer 320 is removed from the region corresponding to the light emitting device 100. Removal of the photoresist layer 320 is performed by selectively patterning the photoresist layer 320 using a mask or the like. The seed layer 310 on the light emitting device 100 is exposed after the present process.

6 and 7, the photoresist layer 320 is stacked on the supporter 300 in other regions except for the light emitting device.

As shown in FIG. 8, the reflective layer 330 is grown. The reflective layer 330 may be grown on the surfaces of the photoresist layer 320 and the exposed seed layer 310, and may be formed in a curved shape along the curved shape of the photoresist layer 320 described above. The reflective layer 330 is formed on the surface of the photosensitive film 320 and the exposed seed layer 310 by a method such as sputtering or electron beam deposition, so that atomicity is maintained inside the thin layer of reflective layer 330 to ensure uniformity. Can be.

In FIG. 8, the thickness of the seed layer 310 and the reflective layer 330 is shown to be similar, but the reflective layer 330 has a thickness of 1 to 10 micrometers, and the seed layer 310 has 10 times the thickness of the reflective layer 330. May be enough.

The reflective layer 330 may be grown in a single layer structure, but may be formed in a double layer structure in which aluminum (Al) or silver (Ag) may be grown from a region close to the seed layer 310. Then, nickel and gold may be grown as an interfacial layer on aluminum or silver.

As shown in FIG. 9, the heat emission layer 350 is grown on the reflective layer 330. The heat release layer 350 may be grown with Cu (copper) having excellent heat transfer. Heights at which growth of the heat dissipation layer 350 may be started may be different from each other, but may be grown to the same and sufficient heights when they are grown by a plating method.

After the growth of the heat emission layer 350, the supporter 300, the adhesive 305, and the photosensitive film 320 are removed from the light emitting device 100. The supporter 300 is removed through the removal of the adhesive 305. When the adhesive 305 is removed using a solvent or the like, the supporter 300 is also separated from the light emitting device 100. The photoresist layer 320 may be removed using a solution different from a solvent used to remove the adhesive 305.

The heat emission layer 350 and the reflective layer 330 are diced corresponding to the respective light emitting devices 100, and the lead frames 360 and 365 and the wires 370 and 375 are illustrated in FIG. 10. Can be connected.

In FIG. 10, the horizontal light emitting device 100 is illustrated, but a vertical light emitting device may be disposed. In this case, the heat emitting layer 350 may be used as a lead frame and may be connected to another lead frame using only one wire. .

In the method of manufacturing a light emitting device package according to the embodiment, since the reflective layer and the heat dissipating layer are sequentially grown from the seed layer grown on the one surface of the light emitting device, the light emitting device is not combined with the package body, so the process is simple and the light emitting device and the heat dissipating layer The bond between the liver can be strong.

11 is a diagram illustrating an embodiment of a head lamp including a light emitting device package.

The light emitted from the light emitting device module 401 in which the light emitting device package is disposed is reflected by the reflector 402 and the shade 403 and then transmitted through the lens 404 to the front of the vehicle body You can head. The light emitting device module 401 may include the above-described light emitting device package and a circuit board for supplying current.

In the light emitting device package disposed in the head lamp according to the present embodiment, when the reflective layer and the heat dissipation layer are sequentially grown from the seed layer plated and grown on one surface of the light emitting element, and the bonding force between the light emitting element and the heat dissipation layer is strong, a heat dissipation layer made of a conductive material is formed. Can act as a lead frame.

The light emitting device package included in the light emitting device module 401 may include a plurality of light emitting devices, but is not limited thereto.

12 illustrates an embodiment of a display device including a light emitting device package.

As shown, the display device 500 according to the present exemplary embodiment includes a light source module, a reflector 520 on the bottom cover 510, and a light disposed in front of the reflector 520 and emitting light emitted from the light source module. In front of the light guide plate 540, the first prism sheet 550 and the second prism sheet 560 disposed in front of the light guide plate 540, and in front of the second prism sheet 560. And a color filter 580 disposed throughout the panel 570.

The light source module comprises a light emitting device package 535 on a circuit board 530. Here, a circuit board (PCB) may be used as the circuit board 530, and the light emitting device package 535 is as described with reference to FIG. 13.

The bottom cover 510 may accommodate components in the display device 500. The reflective plate 520 may be formed as a separate component as shown in the drawing, or may be provided on the rear surface of the light guide plate 540 or on the front surface of the bottom cover 510 with a highly reflective material.

The reflector 520 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and a polyethylene terephthalate (PET) can be used.

The light guide plate 540 scatters the light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 530 is made of a material having a good refractive index and transmittance. The light guide plate 530 may be formed of poly methylmethacrylate (PMMA), polycarbonate (PC), or polyethylene (PE). Also, if the light guide plate 540 is omitted, an air guide display device can be realized.

The first prism sheet 550 is formed on one side of the support film with a translucent and elastic polymer material. The polymer may have a prism layer in which a plurality of steric structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 560, a direction of a floor and a valley of one side of the supporting film may be perpendicular to a direction of a floor and a valley of one side of the supporting film in the first prism sheet 550. This is for evenly distributing the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In this embodiment, the first prism sheet 550 and the second prism sheet 560 constitute an optical sheet, which may be made of other combinations, for example, a microlens array or a combination of a diffusion sheet and a microlens array Or a combination of one prism sheet and a microlens array, or the like.

A liquid crystal display (LCD) panel may be disposed on the panel 570. In addition to the liquid crystal display panel 560, other types of display devices requiring a light source may be provided.

In the panel 570, a liquid crystal is positioned between glass bodies, and a polarizing plate is placed on both glass bodies to utilize the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.

A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.

A color filter 580 is provided on the front surface of the panel 570 so that only the red, green, and blue light is transmitted through the panel 570 for each pixel.

In the light emitting device package disposed in the display device according to the present exemplary embodiment, when the reflective layer and the heat dissipation layer are sequentially grown from the seed layer plated and grown on one surface of the light emitting element, and the bonding force between the light emitting element and the heat dissipation layer is strong, a heat dissipation layer made of a conductive material is formed. Can act as a lead frame.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100 light emitting element 110 substrate
120: buffer layer 130: light emitting structure
140: ohmic layer 150: reflective layer
160: bonding layer 170: conductive support substrate
175 Translucent conductive layer 180 First electrode
185: second electrode 190: passivation layer
210: bonding layer 220: package body
300: supporter 305: adhesive
310: seed layer 320: photosensitive film
330: reflective layer 350: heat release layer
360, 365: leadframe 370, 375: wire
400: head lamp 410: light emitting element module
420: reflector 430: shade
440 lens
800: display device 810: bottom cover
820: reflector 830: circuit board module
840: Light guide plate 850, 860: First and second prism sheet
870 panel 880 color filter

Claims (14)

Fixing the light emitting device to the supporter;
Forming a seed layer on the first surface of the light emitting device;
Coating a photosensitive film on the light emitting device;
Selectively patterning the photoresist to expose the seed layer;
Forming a reflective layer on the seed layer;
Forming a heat dissipation layer on the reflective layer; And
Removing the photosensitive film and separating the light emitting device from the supporter. The method of claim 1,
The seed layer is a method of manufacturing a light emitting device package is formed by a gold plating method. The method of claim 1, wherein the forming of the reflective layer,
Growing aluminum or silver on the seed layer, and growing an interface layer on the aluminum or silver. The method of claim 1,
The heat dissipation layer is a method of manufacturing a light emitting device package formed by a copper plating method. The method of claim 1,
The fixing of the light emitting device to the supporter, the method of manufacturing a light emitting device package for fixing the second surface of the light emitting device to the supporter using an adhesive. The method of claim 1,
The coating of the photosensitive film may include forming the photosensitive film on the sidewall of the light emitting device, wherein the photosensitive film formed on the sidewall of the light emitting device is formed to become thinner toward the first surface of the light emitting device. Method of manufacturing a light emitting device package. The method according to claim 6,
The reflective layer is a manufacturing method of the light emitting device package is formed along the step of the photosensitive film. The method of claim 1,
And dicing the heat dissipating layer in each device unit after forming the heat dissipating layer. A heat dissipation layer having a cavity structure;
A reflective layer formed on the surface of the cavity;
A light emitting element disposed on the reflective layer; And
A light emitting device package comprising a seed layer between the reflective layer and the light emitting device. The method of claim 9,
The seed layer includes a light emitting device package containing Au. 11. The method according to claim 9 or 10,
The reflective layer is a light emitting device package made of silver or aluminum. The method of claim 11,
The reflective layer further comprises a light emitting device package. 13. The method of claim 12,
The interface layer is a light emitting device package containing nickel and gold. 11. The method according to claim 9 or 10,
The heat dissipation layer is a copper plated light emitting device package.

Images