KR20130052590A - Crucible for al evaporation and evaporation system using it - Google Patents

Crucible for al evaporation and evaporation system using it Download PDF

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KR20130052590A
KR20130052590A KR1020130049698A KR20130049698A KR20130052590A KR 20130052590 A KR20130052590 A KR 20130052590A KR 1020130049698 A KR1020130049698 A KR 1020130049698A KR 20130049698 A KR20130049698 A KR 20130049698A KR 20130052590 A KR20130052590 A KR 20130052590A
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deposition
crucible
unit
evaporation source
material injection
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KR1020130049698A
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KR101340162B1 (en
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정광호
김성문
지대준
이청우
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주식회사 야스
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: An Al deposition crucible, and a deposition system thereof are provided to evaporate Al by heating a substance filling unit by forming a substance spray unit which is equipped with a bottleneck section and a widely dispersing section, thereby improving heating efficiency and preventing a boiling phenomenon of Al at the same time. CONSTITUTION: An Al deposition crucible comprises a material filling unit(100) and a material spray unit(200). The material filling unit includes a section which has a fixed cross-sectional area. The material spray unit is connected to the upper end of the material filling unit. The cross-sectional area is formed narrow like a bottleneck on the part which is adjacent to the filling unit, and becomes gradually wider in the direction to which a substance is sprayed. The substance spray unit is inclined in the vertical direction, and the ratio of the diameter of a bottleneck part(210) to the diameter of the upper end of the substance spray unit is 1:4-5.

Description

Ａｌ증착용 도가니 및 이를 사용한 증착시스템{Crucible For Al Evaporation And Evaporation System Using It}Crucible for Al deposition and evaporation system using same {Crucible For Al Evaporation And Evaporation System Using It}

본 발명은 진공증착용 증발원에 포함되는 도가니 및 이를 사용한 증착 시스템에 관한 것으로, 좀 더 상세하게는 알루미늄(Al)을 증발시킬 수 있는 도가니에 관한 것이다.The present invention relates to a crucible included in a vacuum evaporation source and a deposition system using the same, and more particularly, to a crucible capable of evaporating aluminum (Al).

Al은 발광소자에 사용되는 재료로, 증발원을 이용해 MOCVD 방법으로 기판에 기상 증착한다. Al은 다른 물질들에 비해 증발이 어렵고, 반응성이 좋다는 특성 때문에 증발시키는 과정에 있어 몇 가지 문제가 있다. Al is a material used for a light emitting device, and vapor deposition is performed on a substrate by MOCVD using an evaporation source. Al has some problems in the evaporation process because of its difficult evaporation and reactivity compared to other materials.

Al을 도 1a에 나타낸 도가니 몸통에 비해 도가니 입구가 가늘게 형성된 일반적인 도가니에 넣고 도가니 입구에 히터(15)를 부착해 가열하여 증발시킬 경우, 도가니 입구에서의 병목현상에 의해 도가니 입구가 막히거나 액화에 따른 점성 증가(흔히 wetting이라고 함)로 인해 도가니로부터 넘쳐 버리는 현상을 나타내는 문제가 생긴다. When Al is placed in a general crucible with a thinner crucible inlet than the crucible body shown in FIG. The resulting increase in viscosity (commonly called wetting) leads to a problem of overflow from the crucible.

이와 같은 문제를 해결하기 위해, 도 1b와 같이 도가니 입구를 도가니 몸통과 같은 굵기로 만들고 도가니 입구로부터 거리를 둔 하단부에 히터(17)를 부착해 가열하고 도가니 상단부의 입구를 이른바 콜드립(cold lip)으로 온도를 낮추어 Al을 증발시키는 경우, 앞서 말한 넘치는 현상은 완화될 수 있으나 물질의 양이 줄어듦에 따라 분출 분포가 바뀌어 증착 균일도에 문제가 생길 수 있다. 이러한 문제를 해결하기 위해 도 1c의 원뿔 도가니(20)를 사용하기도 하나 완벽히 해결되지는 않으며 물질 충진 가능량이 현저히 떨어지는 문제가 있다. In order to solve this problem, as shown in Figure 1b to make the crucible inlet to the same thickness as the crucible body, attach the heater 17 to the lower end spaced from the crucible inlet and heated the so called cold lip In the case of evaporating Al by lowering the temperature, the above overflow phenomenon can be alleviated. However, as the amount of material decreases, the ejection distribution can change, which may cause a problem in deposition uniformity. In order to solve this problem, although the conical crucible 20 of FIG.

또한, Al이 지니는 반응성으로 인하여 도가니의 재질 선택이 중요해 진다. 즉, 도가니 재질은 충진물인 Al과 반응하지 않아야 원하는 박막을 불순물 없이 증착할 수 있다. 이러한 이유로 선택되는 그라파이트 또는 Al2O3로 도가니를 구성하는 경우, 분자 구조로 인해 가열 도중 크랙(crack)이 발생하는 문제가 있다. In addition, the material selection of the crucible becomes important due to the reactivity of Al. That is, the crucible material should not react with Al, which is a filler, to deposit the desired thin film without impurities. For this reason, when the crucible is composed of graphite or Al 2 O 3 selected, there is a problem that cracks occur during heating due to the molecular structure.

또한, 최근 들어 증발원의 위치가 기판의 아래에 위치하는 상향식 증발원 외에 측향식 증발원에 대한 요구도 늘어가고 있다. 이는 기판의 대면적화로 기판을 수직 상태로 이동하여 증착하는 것이 기판의 처짐 현상을 없앨 수 있기 때문이다.In addition, in recent years, there is an increasing demand for a lateral evaporation source in addition to a bottom-up evaporation source in which the evaporation source is positioned below the substrate. This is because the deposition of the substrate by moving the substrate in a vertical state due to the large area of the substrate can eliminate the phenomenon of sagging of the substrate.

그 외에도 증발원의 물질 분사 각도를 경사지게 할 수 있다면 균일한 막 두께로 증착하고자 하는 요구를 만족시킬 수 있다.In addition, if the material injection angle of the evaporation source can be inclined, it is possible to satisfy the requirement to deposit with a uniform film thickness.

따라서 본 발명의 목적은 Al을 증착함에 있어서, 도가니 입구의 막힘이나 넘침 없는 대용량의 Al 증착용 증발원 구조를 제공하는 것이다.Accordingly, an object of the present invention is to provide an evaporation source structure for a large amount of Al deposition without clogging or overflowing the crucible inlet in depositing Al.

본 발명의 또 다른 목적은 Al을 충진하고 고온으로 가열하여도 크랙이 일어나지 않는 재질로 구성된 Al 증착용 증발원을 제공하는 것이다.Still another object of the present invention is to provide an evaporation source for Al deposition, which is composed of a material which does not crack even when Al is filled and heated to a high temperature.

본 발명의 또 다른 목적은 Al 증착용 증발원을 측향식으로 제공하는 것이다.Still another object of the present invention is to provide an evaporation source for Al deposition in a lateral manner.

본 발명은, According to the present invention,

일정한 단면적을 갖는 구간을 포함한 물질충진부;및Material filling part including a section having a constant cross-sectional area; And

상기 물질충진부 상단에 결합 되는 물질 분사부;를 구비하고,And a material injection part coupled to an upper end of the material filling part.

상기 물질 분사부의 단면적은, 상기 물질충진부와 인접하는 부분을 병(甁)목과 같이 작게 형성하고 물질이 분사되는 방향을 따라 점진적으로 크게 형성하고, The cross-sectional area of the material injection unit is formed to form a portion adjacent to the material filling unit as small as a bottle neck and gradually larger along the direction in which the material is injected,

상기 물질 분사부는 연직 방향으로부터 경사지고, The material injection portion is inclined from the vertical direction,

병목과 같이 생긴 부분의 직경 대 물질 분사부 상단의 직경 비는 1: 4~5로 구성된 것을 특징으로 하는 Al 증착용 도가니를 제공할 수 있다.
The diameter ratio of the diameter of the upper portion of the material injection portion to the diameter of the bottle-shaped portion may provide a crucible for Al deposition, characterized in that consisting of 1: 4-5.

또한, 본 발명은, 상기 Al 증착용 도가니에 있어서, 상기 물질 분사부는 연직 방향으로부터 15 내지 65 ˚경사지게 구성된 것을 특징으로 하는 Al 증착용 도가니를 제공할 수 있다.In addition, the present invention, in the Al deposition crucible, the material injection portion may provide an Al deposition crucible, characterized in that configured to be inclined 15 to 65 ° from the vertical direction.

또한, 본 발명은, 상기 물질충진부와 물질 분사부를 AlN로 구성하는 것을 특징으로 하는 Al 증착용 도가니를 제공할 수 있다.In addition, the present invention, it is possible to provide a crucible for Al deposition, characterized in that the material filling portion and the material injection portion is composed of AlN.

또한, 본 발명은, 상기의 Al 증착용 도가니;를 히터에 안착하여 증발원;을 구성하고,In addition, the present invention, by mounting the above-mentioned Al deposition crucible to the heater to constitute an evaporation source,

증착 공정에서는 상기 증발원 전체를 기울여 기판에 박막을 증착하고, In the deposition process, the entire evaporation source is tilted to deposit a thin film on the substrate,

상기 물질 충진부에 물질을 충진하는 공정에서는 증착 공정 중 기울였던 상기 증발원을 다시 원위치시켜 물질을 피더(feeder)에 의해 충진 하도록 자동제어되는 것을 특징으로 하는 증착 장치를 제공할 수 있다. In the process of filling a material in the material filling part, the deposition apparatus may be automatically controlled to refill the evaporation source that was inclined during the deposition process so as to fill the material by a feeder.

본 발명에 따르면, Al을 입구 막힘이나 넘침 없이 대용량으로 증착시킬 수 있고, 가열 도중 크랙이 일어나지 않아 증착 공정을 안정되게 수행할 수 있다. According to the present invention, Al can be deposited in a large capacity without inlet blockage or overflow, and cracks do not occur during heating, so that the deposition process can be stably performed.

또한, 본 발명에 따르면, 물질 분사구를 여러 가지 각도로 제공하므로 박막 두께 균일 형성 내지는 대면적 수직 기판 증착을 가능하게 한다. In addition, according to the present invention, the material injection holes are provided at various angles to enable uniform film formation or large area vertical substrate deposition.

또한, 본 발명에 따르면, 증착 공정에 있어서는 증발원을 기울여 대면적 기판에 대한 증착 균일도를 강화하고, 증착 공정 사이에 물질을 충진하여야 할 경우는 기울였던 증발원을 다시 원위치로 되돌려 물질을 안전하게 충진 할 수 있는 장점을 제공한다. According to the present invention, in the deposition process, the evaporation source can be tilted to enhance the deposition uniformity of the large-area substrate, and when the material is to be filled between deposition processes, the evaporation source can be returned to its original position to safely fill the material. Provide advantages.

도 1a 내지 1c는 종래 기술에 따른 Al 증착용 도가니를 나타내는 단면도이다.
도 2a 내지도 2c는 본 발명의 바람직한 실시예에 따른 Al 증착용 도가니를 나타내는 단면도이다.1A to 1C are cross-sectional views showing crucibles for Al deposition according to the prior art.
2A to 2C are cross-sectional views illustrating a crucible for Al deposition according to a preferred embodiment of the present invention.

이하, 첨부 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2a 내지 도 2c에는 본 발명에 따른 Al 증착용 증발원이 도시되어 있다. 2A to 2C show an evaporation source for Al deposition according to the present invention.

Al 을 넣는 물질충진부(100)는 굵기가 일정한 원기둥이나 사각기둥 등의 기둥형상으로 구성한다. 구성재질은 AlN로 하는 것이 바람직하다. 이는 Al의 경우 반응성이 좋아 세라믹이나 다른 금속을 구성재질로 사용할 경우, 고온으로 가열된 상태에서 물질충진부 자체에서 화학반응이 일어날 수 있고 그에 따라 증착 박막은 순도를 잃기 때문이다. 또한, 그라파이트 또는 Al2O3의 경우, 앞서 언급한 바와 같이 고온에서 크랙이 발생하기 때문에 구성재로 채택하지 않는 것이 좋다. 따라서 AlN를 소결 및 연마 가공을 통해 물질충진부(100)를 제작한다. The material filling part 100 containing Al is configured in a columnar shape such as a cylinder or a square column having a constant thickness. The constituent material is preferably AlN. This is because Al has good reactivity and when a ceramic or other metal is used as a constituent material, a chemical reaction may occur in the material filling part itself while heated to a high temperature, and thus the deposited thin film loses purity. In addition, in the case of graphite or Al 2 O 3 , it is not preferable to adopt it as a component because cracks are generated at a high temperature as mentioned above. Therefore, the material filling unit 100 is manufactured by sintering and polishing AlN.

Al을 고온으로 가열하여 증발시켜 원하는 방향으로 증발물을 분사하기 위한 물질 분사부(200)는 상기 물질충진부(100)의 입구에 연결되는 하단부는 병(甁)목과 같이 굵기를 가늘게 하여 병목 구간(210)으로 하고 이후 물질이 분사되는 방향으로 갈수록 굵기를 굵게 만든다. 즉, 물질 분사부(200)의 단면 구조는 원뿔대의 단면 구조와 유사하다. 또한, 물질 분사부(200)는 연직 방향에 대해 경사지게 구성하여, 증발물의 분사를 경사지게 할 수 있으며, 그에 따라 기판에 증착될 증발물의 분포를 균일하게 제어할 수 있다. 즉, 도 2a에 도시된 증발원 두 개를 물질 분사부(200)가 서로 마주하게 배치하면, 도 2c에 도시된 증발원 하나를 가지고 증착하는 것보다 막 두께를 균일하게 할 수 있다. The material injection unit 200 for spraying the evaporate in a desired direction by heating the Al to a high temperature is evaporated, and the lower end connected to the inlet of the material filling unit 100 has a thinner bottle neck, such as a bottle neck. (210) and the thickness is made thicker in the direction in which the material is sprayed. In other words, the cross-sectional structure of the material injection unit 200 is similar to that of the truncated cone. In addition, the material injection unit 200 may be configured to be inclined with respect to the vertical direction, thereby inclining the injection of the evaporate, thereby uniformly controlling the distribution of the evaporate to be deposited on the substrate. That is, when the material injection units 200 are disposed to face each other, the evaporation sources illustrated in FIG. 2A may have a uniform film thickness than the vapor deposition with one evaporation source illustrated in FIG. 2C.

상기 물질 분사부(200)의 구성도 AlN로 하는 것이 바람직하며, 물질충진부(100)와 물질 분사부(200)를 일체로 제작할 수도 있겠으나, 금형제작상의 어려움이 있기 때문에 본 실시예에서는 별도 제작하여 양자를 나사결합으로 체결하였다. 결합은 그 외에도 강제 압입식 등의 다른 방법으로 할 수도 있다. The material injection unit 200 is also preferably made of AlN, and the material filling unit 100 and the material injection unit 200 may be manufactured integrally, but there are difficulties in manufacturing a mold. Produced and fastened by screwing both. Coupling can also be done in other ways, such as forced press.

도 2b에는 측향식 증발원이 도시되어 있다. 2b shows a lateral evaporation source.

측향식 증발원은, 도가니의 물질 분사부(200)의 중심선의 각도가 물질 충진부(100)에 대해 15 내지 65 °정도로 굴절되고(도 2b는 굴절 상태를 실물 상태 이상으로 강조한 그림), 이러한 도가니를 히터에 안착하여 구성한 증발원은 그대로 증착공정에 사용될 수도 있으나, 대면적 기판을 수직으로 한 증착 공정에서, 상기 증발원을 기울여 증발물을 측향으로 분사할 수 있다. 대면적 기판을 수직으로 배치하여 증착 공정을 수행하는 경우, 이와 같은 측향식 증발원을 사용하게 된다. 이와 같은 측향식 증발원 구성은 증발원이 위치되는 챔버 바닥면에 공압 실린더와 유니버셜 조인트 등으로 증발원의 한쪽은 고정하고 다른 한쪽은 들어올리도록 하여 이루어질 수 있다. In the lateral evaporation source, the angle of the center line of the material injection part 200 of the crucible is refracted by about 15 to 65 ° with respect to the material filling part 100 (FIG. 2B is a figure in which the refractive state is emphasized above the real state). The evaporation source configured to be mounted on the heater may be used in the deposition process as it is, but in a deposition process in which a large area substrate is vertical, the evaporation source may be inclined to inject the evaporate laterally. When the deposition process is performed by placing the large-area substrate vertically, such a lateral evaporation source is used. The configuration of the lateral evaporation source may be made by fixing one side of the evaporation source and lifting the other side with a pneumatic cylinder and a universal joint on the bottom of the chamber in which the evaporation source is located.

또한, 증착 공정이 진행되다 물질을 더 충진 해야 하는 경우에는 기울였던 증발원을 다시 원위치로 되돌려놓은 직립상태에서 피더(feeder)를 이용하여 반응 챔버 내에서 진공을 깨뜨리지 않고 물질을 상기 물질 분사부(200)를 통해 물질 충진부(100) 안에 충진할 수 있다. In addition, when the deposition process is in progress and the material needs to be further filled, the material injection unit 200 does not break the vacuum in the reaction chamber by using a feeder in a standing state in which the evaporation source is returned to its original position. Through the material filling unit 100 can be filled through.

즉, 예를 들면, 물질 분사부(200)의 기울기를 연직 방향에 대해 30˚정도로 형성하고, 증착 공정에서 자동제어 장치로 증발원 전체를 30˚정도 기울여 실질적인 증착은 거의 대부분 측향식으로 이루어지도록 증착하고, 물질 충진은 물질 분사부(200)가 너무 기울어진 상태에서는 밖으로 흘러넘칠 가능성이 있으므로 다시 증발원을 원위치로 직립시켜 피더로 공급하는 것이다. 이러한 방식은 물질 분사부(200)의 경사각과 증발원 전체의 경사각을 조절함으로써 다양한 증착 각도를 구현할 수 있다. 상기에서 피더는 와이어(wire) 용융식 또는 펠렛(pellet)식 모두 가능하다. That is, for example, the inclination of the material injector 200 is formed at about 30 degrees with respect to the vertical direction, and the entire evaporation source is inclined at about 30 degrees with the automatic control device in the deposition process, so that the most of the actual deposition is performed in a lateral manner. And, the material filling is because the material spraying part 200 is likely to flow out in an inclined state so that the evaporation source is upright again to supply to the feeder. This method may implement various deposition angles by adjusting the inclination angle of the material injection unit 200 and the inclination angle of the entire evaporation source. In the above, the feeder may be wire melted or pelletized.

따라서 상기와 같은 증착 시스템은 대면적 기판에 대한 박막 증착을 용이하게 하고, 전체적인 공정의 진행을 편리하고 효율적으로 한다. Thus, such a deposition system facilitates thin film deposition on large area substrates and facilitates and facilitates the overall process.

본 실시예의 증발원의 경우, 물질 분사부(200)의 연직 방향에 대한 경사도는 필요에 따라 15 내지 65 °로 할 수 있으나 이에 한정되지는 않는다.In the case of the evaporation source of the present embodiment, the inclination of the material injection unit 200 in the vertical direction may be 15 to 65 ° as necessary, but is not limited thereto.

도 2c에는 물질 분사부(200)의 방향이 물질 충진부(100)와 일치하는 연직 방향으로 형성된다. 즉, 상향식 증발원으로 구성하고자 한 것이다.In FIG. 2C, the direction of the material injection unit 200 is formed in a vertical direction coinciding with the material filling unit 100. That is, it is intended to be a bottom-up evaporation source.

물질 분사부(200)의 단면 형상은 도 2a 내지 도 2c에서 모두 원뿔대의 단면 형상과 같으며, 이때 원뿔대의 중심각은 연직선에 대해 15 내지 30 ˚가 되도록 설계하며, 그에 따라 물질 분사부(200) 하단의 병목과 같이 생긴 부분의 직경 대 물질 분사부(200) 상단의 직경 비는 1: 4~5로 구성될 수 있다. The cross-sectional shape of the material injection unit 200 is the same as the cross-sectional shape of the truncated cone in Figures 2a to 2c, wherein the center angle of the cone is designed to be 15 to 30 degrees with respect to the vertical line, accordingly the material injection unit 200 The diameter ratio of the diameter of the portion formed like a bottleneck at the bottom to the upper portion of the material injection unit 200 may be configured to be 1: 4-5.

상기와 같은 병목 구간과 넓게 퍼질 수 있는 구간을 구비한 물질 분사부(200)를 구성하여 물질충진부(100)를 가열하여 Al을 증발시키면, 가열 효율을 높이는 동시에 Al의 비등 현상을 방지할 수 있고, 물질 분사 방향 또한 경사식 내지는 측향식으로 구현할 수 있다.
By forming the material injection unit 200 having a bottleneck section and a section that can be widely spread as described above, the material filling unit 100 is heated to evaporate Al, thereby improving heating efficiency and preventing boiling of Al. In addition, the material injection direction may also be implemented in an oblique or lateral manner.

본 발명의 권리는 위에서 설명된 실시예에 한정되지 않고 청구범위에 기재된 바에 의해 정의되며, 본 발명의 분야에서 통상의 지식을 가진 자가 청구범위에 기재된 권리범위 내에서 다양한 변형과 개작을 할 수 있다는 것은 자명하다.The rights of the present invention are not limited to the embodiments described above, but are defined by the claims, and those skilled in the art can make various modifications and adaptations within the scope of the claims. It is self-evident.

100: 물질충진부 200: 물질 분사부
210: 병목 구간100: material filling part 200: material injection part
210: bottleneck

Claims (2)

일정한 단면적을 갖는 구간을 포함한 물질충진부;및
상기 물질충진부 상단에 결합 되는 물질 분사부;를 구비하고,
상기 물질 분사부의 단면적은, 상기 물질충진부와 인접하는 부분을 병(甁)목과 같이 작게 형성하고 물질이 분사되는 방향을 따라 점진적으로 크게 형성하고,
상기 물질 분사부는 연직 방향으로부터 경사지고,
병목과 같이 생긴 부분의 직경 대 물질 분사부 상단의 직경 비는 1: 4~5로 구성된 것을 특징으로 하는 Al 증착용 도가니.Material filling part including a section having a constant cross-sectional area; And
And a material injection part coupled to an upper end of the material filling part.
The cross-sectional area of the material injection unit is formed to form a portion adjacent to the material filling unit as small as a bottle neck and gradually larger along the direction in which the material is injected,
The material injection portion is inclined from the vertical direction,
Crucible for Al deposition, characterized in that the ratio of the diameter of the bottle-like portion to the top of the material injection portion is 1: 4-5. 제1항에 있어서, 상기 Al 증착용 도가니에 있어서, 상기 물질 분사부는 연직 방향으로부터 15 내지 65 ˚경사지게 구성된 것을 특징으로 하는 Al 증착용 도가니.The crucible for Al deposition according to claim 1, wherein in the Al deposition crucible, the material injection portion is configured to be inclined 15 to 65 degrees from the vertical direction.
KR1020130049698A 2013-05-03 2013-05-03 Crucible For Al Evaporation And Evaporation System Using It KR101340162B1 (en)

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KR20220032669A (en) * 2020-09-08 2022-03-15 (주)단단 Crucible for vacuum evaporation
KR20220058175A (en) * 2020-10-30 2022-05-09 (주)단단 Crucible for vacuum evaporation
CN114502767A (en) * 2019-11-29 2022-05-13 Lg电子株式会社 Crucible for deposition

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KR100517255B1 (en) * 2003-06-20 2005-09-27 주식회사 야스 Linear type nozzle evaporation source for manufacturing a film of OLEDs
JP4728882B2 (en) * 2006-06-09 2011-07-20 長州産業株式会社 Method for manufacturing crucible for molecular beam source for thin film deposition

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114502767A (en) * 2019-11-29 2022-05-13 Lg电子株式会社 Crucible for deposition
CN114502767B (en) * 2019-11-29 2023-10-27 Lg电子株式会社 Crucible for deposition
KR20220032669A (en) * 2020-09-08 2022-03-15 (주)단단 Crucible for vacuum evaporation
KR20220058175A (en) * 2020-10-30 2022-05-09 (주)단단 Crucible for vacuum evaporation

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