KR20130051095A - Lead frame, manufacturing method the same and light emitting diode using the same - Google Patents

Lead frame, manufacturing method the same and light emitting diode using the same Download PDF

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Publication number
KR20130051095A
KR20130051095A KR1020110116249A KR20110116249A KR20130051095A KR 20130051095 A KR20130051095 A KR 20130051095A KR 1020110116249 A KR1020110116249 A KR 1020110116249A KR 20110116249 A KR20110116249 A KR 20110116249A KR 20130051095 A KR20130051095 A KR 20130051095A
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KR
South Korea
Prior art keywords
lead frame
layer
aluminum
light emitting
bragg reflector
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Application number
KR1020110116249A
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Korean (ko)
Inventor
한성연
김종인
이원준
김용석
Original Assignee
삼성전자주식회사
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Priority to KR1020110116249A priority Critical patent/KR20130051095A/en
Publication of KR20130051095A publication Critical patent/KR20130051095A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

The present invention provides a light emitting device comprising: a first lead frame having a region in which a light emitting diode chip is to be mounted; A second lead frame separated from the first lead frame; An aluminum (Al) layer formed on at least one side of the first and second lead frames; A lead frame formed on an upper surface of the aluminum (Al) layer, including a distributed Bragg reflector layer formed by alternately stacking first and second refractive films having different refractive indices, thereby preventing discoloration and improving light extraction efficiency; Provided are a manufacturing method and a light emitting diode package using the same.

Description

Lead frame, manufacturing method and light emitting diode package using same {Lead frame, Manufacturing Method the Same and Light Emitting Diode using the Same}

The present invention relates to a lead frame, a method of manufacturing the same, and a light emitting diode package using the same.

A light emitting diode is a device in which a material included in the device emits light by using electrical energy. The light emitting diode converts energy generated by recombination of electrons and holes of the bonded semiconductor into light and emits the light. Such light emitting diodes are widely used as lighting, display devices, and light sources, and their development is being accelerated.

In particular, the development of general lighting using light emitting diodes has recently been fueled by the commercialization of mobile phone keypads, side viewers, camera flashes, etc. using gallium nitride (GaN) based light emitting diodes, which have been actively developed and used. Like the backlight units of large TVs, automotive headlights, and general lighting, the use of light emitting diodes is gradually increasing in size, high output, and high efficiency, and the characteristics of light emitting diodes used in such applications are also satisfied. Higher levels are required.

However, the lead frame provided in the conventional light emitting diode has a problem in that the surface discoloration occurs frequently to reduce the external light extraction efficiency.

One of the objects of one embodiment of the present invention is to provide a lead frame and a method for manufacturing the same, in which discoloration is suppressed and light extraction efficiency is improved.

One object of one embodiment of the present invention is to provide a light emitting diode package using such a lead frame.

A lead frame according to an embodiment of the present invention includes a first lead frame having a region in which a light emitting diode chip is to be mounted; A second lead frame separated from the first lead frame; An aluminum (Al) layer formed on at least one side of the first and second lead frames; And a distributed Bragg reflector layer formed on an upper surface of the aluminum (Al) layer and formed by alternately stacking first and second refractive films having different refractive indices.

In this case, the aluminum (Al) layer may be formed on the surfaces of the first and second lead frames by vacuum deposition.

In addition, each of the first and second refractive films may be formed of a light transmissive material, and the first refractive film may include any one material of Ta 2 O 5 , ITO, TiO 2 , ZrO 2, and Si 3 N 4 . The second refractive film is SiO 2 , Al 2 O 3 And MgO.

The distributed Bragg reflector layer may be formed in a region where the LED chip of the first lead frame is to be mounted.

In addition, the distributed Bragg reflector layer may be a connection portion to be electrically connected to the light emitting diode chip is mounted, the connection portion may be a groove portion formed so that the aluminum (Al) layer is exposed on the bottom surface of the distributed Bragg reflector layer. .

A light emitting diode package according to an embodiment of the present invention includes a package body having a lead frame; And a light emitting diode chip mounted on the package body and electrically connected to the lead frame, wherein the lead frame comprises: a first lead frame having a region in which the light emitting diode chip is to be mounted; A second lead frame separated from the first lead frame; An aluminum (Al) layer formed on at least one side of the first and second lead frames; And a distributed Bragg reflector layer formed on an upper surface of the aluminum (Al) layer and formed by alternately stacking first and second refractive films having different refractive indices.

In this case, the aluminum (Al) layer may be formed on the surfaces of the first and second lead frames by vacuum deposition, and the first and second refractive films constituting the dispersed Bragg reflector layer are each made of a light transmissive material. Can be.

The package body may have a recess in which the first and second lead frames are exposed, and the distributed Bragg reflector layer may be formed on an upper surface of the first and second lead frames exposed in the recess.

In addition, the distributed Bragg reflector layer may be a connection portion to be electrically connected to the light emitting diode chip is mounted, the connection portion may be a groove portion formed so that the aluminum (Al) layer is exposed on the bottom surface of the distributed Bragg reflector layer. .

According to one or more exemplary embodiments, a method of manufacturing a lead frame includes: forming a first lead frame and a second lead frame having an area where a light emitting diode chip is to be mounted by patterning a raw material substrate; Forming an aluminum (Al) layer on at least one side of the first and second lead frames; Alternately stacking first and second refractive films having different refractive indices on the aluminum (Al) layer to form a dispersed Bragg reflector layer.

In this case, the forming of the aluminum (Al) layer may be a step of vacuum depositing aluminum (Al) on the surfaces of the first and second lead frames.

The method may further include forming an aluminum (Al) coating prevention layer on one side of the first and second lead frames before forming the aluminum (Al) layer. It may be an ultraviolet (UV) photosensitive film.

The method may further include forming an antioxidant layer on the aluminum (Al) layer before forming the dispersed Bragg reflector layer.

In this case, the package body may have a recess in which the first and second lead frames are exposed, and the distributed Bragg reflector layer may be formed on an upper surface of the first and second lead frames exposed in the recess.

In addition, the distributed Bragg reflector layer may be a connection portion to be electrically connected to the light emitting diode chip is mounted, the connection portion may be a groove portion formed so that the aluminum (Al) layer is exposed on the bottom surface of the distributed Bragg reflector layer. .

One of the objects of one embodiment of the present invention is to provide a lead frame and a method for manufacturing the same, in which discoloration is suppressed and light extraction efficiency is improved.

One object of one embodiment of the present invention is to provide a light emitting diode package using such a lead frame.

1 is a perspective view schematically showing a light emitting diode package according to an embodiment of the present invention.
FIG. 2 is a view schematically illustrating the shape of a cross section of the light emitting diode package illustrated in FIG. 1 along an AA ′ line.
3 is an enlarged view of a portion B of FIG. 2.
4 to 7 is a view schematically showing a method of manufacturing a lead frame according to an embodiment of the present invention.
8 to 9 are schematic views illustrating a method of manufacturing a light emitting diode package according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment according to the present invention.

These examples are provided to illustrate the scope of the invention to those skilled in the art with respect to the present invention. Therefore, the present invention is not limited to the following embodiments, but may be embodied in various forms suggested by the claims. Therefore, the shape and size of the components shown in the drawings may be exaggerated for more clear description, components having substantially the same configuration and function in the drawings will use the same reference numerals.

First, a lead frame and a light emitting diode package according to an embodiment of the present invention will be described.

1 is a perspective view schematically illustrating a light emitting diode package according to an embodiment of the present invention, and FIG. 2 is a view schematically illustrating a cross-sectional view of the light emitting diode package illustrated in FIG. 1 taken along line AA ′.

The lead frame according to an embodiment of the present invention may be manufactured by a manufacturing process of a light emitting diode package to be described later. Alternatively, the lead frame may be manufactured separately and provided to a manufacturing process of a light emitting diode package.

1 and 2, a lead frame according to an embodiment of the present invention may include a first lead frame 110, a second lead frame 120, and the first and second lead frames 110 and 120. The aluminum (Al) layers 112 and 122 and the Bragg reflector layers 113 and 123 are formed on the substrate.

The first lead frame 110 and the second lead frame 120 are formed based on the base substrates 111 and 121, and the exposed regions 111a and 121a on which the LED chips 140 to be described later are mounted. The buried regions 111b and 121b are respectively provided. The exposed regions 111a and 121a may have a flat top surface so that the light emitting diode chip 140 may be easily seated and electrically connected. The buried regions 111b and 121b are arranged at outer peripheries of the exposed regions 111a and 121a to fix the base substrates 111 and 121 to the package body 130. The buried regions 111b and 121b may be bent and inclined. In this case, the contact area between the buried regions 111b and 121b and the package main body 130 may be increased to more firmly couple the buried regions 111b and 121b to the package main body 130.

The base substrates 111 and 121 may use a metal having excellent electrical conductivity, such as copper (Cu), an alloy of copper (Cu), or a phosphorus-bronze alloy, but is not limited thereto.

Aluminum (Al) layers 112 and 122 are formed on at least one side of the base substrates 111 and 112.

In general, silver (Ag) having high reflectivity is plated on the surface of the base substrate to improve the external light extraction efficiency of light emitted from the light emitting diode chip, but silver (Ag) is present in traces of sulfur (S ) May form silver sulfide (Ag 2 S), which discolors the surface of the lead frame, thereby reducing the reflectance on the surface of the lead frame, thereby reducing external light extraction efficiency and causing a decrease in the reliability of the product. It became.

The aluminum layers 112 and 122 have little reactivity with trace elements in the air in the manufacturing process, and thus do not cause discoloration to reduce the external light extraction efficiency, and have higher electrical conductivity and thermal conductivity than silver (Ag). And the reflectivity is almost the same, but the cost is an advantage. In addition, when the aluminum layers 112 and 122 are formed by a non-plating process such as vacuum deposition or sputtering, the plating process, which is sensitive to the surrounding environment and can be difficult to manage, can be removed from the manufacturing process. The process is simplified and the quality is kept uniform.

In addition, an aluminum (Al) coating prevention layer is formed on the lower surface of the base substrate before the forming of the aluminum (Al) layer, so that the aluminum (Al) layer is the first and second lead frames (110, 120) The light emitting diode chip 140 may be formed only on the surface on which the light emitting diode chip 140 is mounted. The aluminum (Al) coating prevention layer may be formed of an ultraviolet (UV) photosensitive film, but is not limited thereto.

In addition, an anti-oxidation layer (not shown) may be formed on the aluminum (Al) layer to prevent damage to the aluminum (Al) layer. The antioxidant layer may be formed by UV coating, but is not limited thereto.

A distributed Bragg reflector (DBR) 113, 123 is formed on an upper surface of the aluminum (Al) layer.

As illustrated in FIG. 3, the distributed Bragg reflector layers 113 and 123 are formed by alternately stacking a first refractive film 113a and a second refractive film 113b having different refractive indices. The first and second refractive films 113a and 113b constituting the distributed Bragg reflector layer may be made of a light transmissive material, respectively. The distributed Bragg reflector layers 113 and 123 are formed on an upper surface of the first lead frame 110 on which the LED chip 140 is seated, so that the light emitted from the LED chip 140 is transferred to the LED chip. When reflected from the inside of the wavelength conversion unit 150 encapsulating 140 proceeds to the lead frame (110, 120), the dispersed Bragg half-time layer (113, 123) and aluminum layer (112, 122) By reflecting with high reflectivity, the external light extraction efficiency can be further improved.

The dispersed Bragg reflector layers 113 and 123 include a first refractive film 113a and a second refractive film 113b having different refractive indices, and the first refractive film 140a is compared with the second refractive film 140b. When it does, the refractive index can be formed relatively high. That is, the first refractive film 113a may have a higher refractive index than the second refractive film 113b.

Specifically, the first refractive film 140a is formed of Ta 2 O 5 (refractive index: about 1.8), Material of any one of ITO (refractive index: about 2.0), TiO 2 (refractive index: about 2.3), ZrO 2 (refractive index: about 2.05), Si 3 N 4 (refractive index: about 2.02), and Refractive film 140b is SiO 2 (Refractive index: about 1.46), Al 2 O 3 (refractive index: about 1.68), MgO (refractive index: about 1.7) may include a material.

Meanwhile, the distributed Bragg reflector layers 113 and 123 may be formed to have a structure having high reflectance for a specific wavelength region. That is, the wavelength region corresponding to the wavelength light converted by the phosphor included in the wavelength conversion unit 150 of the light emitting device package 100 may be configured to be well reflected. In order to implement this, the thickness and the refractive index difference of the first and second refractive films 113a and 113b constituting the distributed Bragg reflector layers 113 and 123 may be adjusted.

The distributed Bragg reflector layers 113 and 123 may be limitedly formed only in the exposed regions 110a and 120a of the base substrates 111 and 121. When the distributed Bragg reflector layers 113 and 123 are formed between the lead frames 110 and 120 and the package body 130, the coupling force between the lead frames 110 and 120 and the package body 130 is reduced. Reduced and separated phenomenon may occur and moisture may flow into the light emitting diode package 100. If the scattered Bragg reflector layers 113 and 123 are limited to only the exposed regions 110a and 120a of the base substrates 111 and 121, such a problem may be prevented, thereby improving reliability.

In addition, a part of the distributed Bragg reflector layers 113 and 123 is removed from the distributed Bragg reflector layers 113 and 123 to electrically connect the LED chip 140 to the lead frames 110 and 120. Contact portions 114 and 124 may be formed. In this case, the aluminum (Al) layer may be exposed on the bottom surfaces of the contact parts 114 and 124. The scattered Bragg reflector layers 113 and 123 have excellent light reflectivity, while the electrical conductivity is lower than that of a general conductive material. Thus, the light emitting diode chip 140 may be wired through the contact portions 114 and 124. When bonding, the electrical conductivity may be reduced to prevent the internal light extraction efficiency of the LED chip 140 from being reduced.

Next, the LED package 100 using the lead frames 110 and 120 will be described.

As shown in FIGS. 1 and 2, the LED package 100 includes a package body 130 having first and second lead frames 110 and 120 and a LED chip 140.

The package body 130 includes the first and second lead frames 110 and 120, and the light emitting diode chip 140 is mounted on one side of the first lead frame 110. The surface on which the light emitting diode chip 140 of the package body 130 is mounted may have a concave surface formed to be concave so as to form an inclined surface toward the light emitting diode chip 140.

As described above, the first and second lead frames 110 and 120 may include the base substrates 111 and 121 having the non-holding regions 111a and 121a and the buried regions 111b and 121b, and the base substrates 111, An aluminum (Al) layer formed on at least one side of 121 and an upper surface of the aluminum (Al) layer, and the first refractive film 113a and the second refractive film 113b having different refractive indices are alternately stacked. And a distributed Bragg reflector.

The light emitting diode chip 140 may be mounted on one side of the package body 130, and the light emitting diode chip 140 may use any photoelectric device that emits light when an electric signal is applied. A semiconductor LED chip in which a semiconductor layer is epitaxially grown on a substrate can be used.

The growth substrate may be sapphire, but is not limited thereto. For example, a known growth substrate such as spinel, SiC, GaN, GaAs, or the like may be used. Specifically, the light emitting diode chip 140 may be made of BN, SiC, ZnSe, GaN, InGaN, InAlGaN, AlGaN, BAlGaN, BInAlGaN, or the like, and may be doped with Si or Zn. In addition, the light emitting layer of the LED chip 140 may be formed of a nitride semiconductor consisting of In x Al y Ga 1 -xy (0≤X≤1, 0≤Y≤1, 0≤X + Y≤1) It can be composed of single or multiple quantum well structures to improve output.

An electrode (not shown) formed on an upper surface of the LED chip 140 may be bonded to the lead frames 110 and 120 of the package body 130 to receive an electric signal from the outside. In the present embodiment, although the wire is bonded through each of the electrodes formed on the upper surface of the LED chip 140, in contrast, the lead frame provided to the mounting area of the LED chip does not use a wire The specific connection method may be variously changed as necessary, such as only a lead frame which is directly electrically connected and which is not provided as a mounting region is connected to the conductive wire. In addition, in the present embodiment, one light emitting diode chip 140 is illustrated in the package body 130, but two or more light emitting diode chips may be provided.

The wavelength conversion part 150 may be formed on the concave surface of the package body 130. The wavelength converter 150 may be formed to encapsulate the light emitting diode chip 140. The wavelength converter 150 may convert light emitted from the light emitting diode chip 140 to a specific wavelength, such as a phosphor or a quantum dot. In this case, the phosphor or quantum dots may be mixed and filled in a dispersion of a transparent liquid resin such as silicon. The dispersion may be a resin selected from the group consisting of silicone resins, epoxy resins, acrylic resins, polymethyl methacrylate (PMMA) resins, mixtures thereof and compounds. The phosphor may be formed of a phosphor that converts the wavelength into any one of yellow, red, and green, and the type of the phosphor is determined by the wavelength emitted from the light emitting diode chip 140. Can be. Specifically, the phosphor may include any one of YAG-based, TAG-based, silicate-based, silicate-based, sulfide-based, or nitride-based fluorescent materials. For example, in the case of applying a phosphor which wavelength-converts to yellow to a blue light emitting element, white light can be obtained.

As described above, the light emitting diode package 100 having the above configuration is reflected by the light emitted from the light emitting diode chip 140 in the wavelength converter 150 encapsulating the light emitting diode chip 140. When proceeding to the lead frame (110, 120), since the reflected Bragg reflector layer 113, 123 and the aluminum layer (112, 122) reflects it with high reflectivity, it is possible to further improve the external light extraction efficiency.

Next, the lead frames 110 and 120 and the manufacturing method of the LED package 100 using the same will be described.

The method of manufacturing the lead frames 110 and 120 may include forming a base substrate, forming an aluminum (Al) layer on the base substrate, and forming a dispersed Bragg reflector layer on the aluminum (Al) layer. Include.

First, as shown in FIGS. 4 and 5A, the raw material substrate C including the metal is patterned to form the exposed regions 111a and 111b and the buried regions 121a and 121b. Copper (Cu), copper (Cu) alloy, phosphorus-bronze alloy and the like having excellent electrical conductivity may be used as the raw material substrate (C). The patterning method may be a method such as etching, stamping or punching, but is not limited thereto. FIG. 5A is a plan view showing C 'in which a plurality of lead frames are formed simultaneously on the raw material substrate C. FIG. 5B is a side cross-sectional view of the portion D of FIG. 5A.

Next, as shown in FIG. 6, aluminum (Al) layers 112 and 122 are formed on the exposed areas 111a and 111b. Specifically, the aluminum (Al) layers 112 and 122 may be formed by a non-plating process such as vacuum deposition or sputtering. As described above, the aluminum (Al) layer ( 112 and 122 have the advantage that the plating process, which is difficult to manage the plating liquid, is eliminated in the manufacturing process, thereby simplifying the manufacturing process and maintaining uniform quality.

Next, as shown in FIG. 7, the distributed Bragg reflector layers 113 and 123 are formed on the aluminum (Al) layers 112 and 122. In this case, when the dispersed Bragg reflector layers 113 and 123 are formed only on the exposed areas 111a and 111b, moisture may be introduced due to a decrease in the coupling force between the lead frames 110 and 120 and the package body 130. Can be prevented.

Contact points 114 and 124 are formed on the distributed Bragg reflector layers 113 and 123 to bond the light emitting diode chip 140 to a wire W, and the contact parts 114 and 124 are distributed Bragg reflector layers. It can be formed by etching (113, 123).

Next, a method of manufacturing the light emitting diode package 100 will be described. The manufacturing method of the light emitting diode package 100 will be described taking the case of manufacturing using a lead frame manufactured in advance.

First, as shown in FIG. 8, the package body 130 having a recess is formed to expose the exposed regions 111a and 121a of the lead frames 110 and 120 described above. The package body 130 may be formed by accommodating the lead frames 110 and 120 in a mold and injecting a resin, accommodating the lead frames 110 and 120 in a mold, and forming an epoxy molding compound (EMC). After injecting the same resin, it may be formed by curing at an appropriate high temperature.

Next, as shown in FIG. 9, a light emitting diode chip 140 is mounted on the first lead frame 110, and a contact (not shown) and the contact portion 114 of the light emitting diode chip 140 are mounted. The surface of the aluminum (Al) layer exposed on the bottom surface of 124 is bonded to the wire (W). The wavelength converter 150 may be formed in the concave portion of the package body 130 to encapsulate the light emitting diode chip 140. In detail, the wavelength conversion unit 150 may be formed by mixing phosphors or quantum dots in a dispersion of a transparent liquid resin such as silicon and filling the recesses of the package body 130. In this case, the dispersion may be a resin selected from the group consisting of a silicone resin, an epoxy resin, an acrylic resin, a polymethyl methacrylate (PMMA) resin, a mixture thereof, and a compound thereof.

100: light emitting diode package 110: first lead frame
110a, 120a: exposed area 110b, 120b: buried area
111, 121: base substrate 112, 122: aluminum layer
113 and 123: distributed Bragg reflector layer 120: second lead frame
122a: first refractive film 122b: second refractive film
114 and 124: contact portion 130: package body
140: light emitting diode chip 150: wavelength conversion unit
W: Wire Bonding C: Raw Material Substrate

Claims (22)

A first lead frame having a region in which the LED chip is to be mounted;
A second lead frame separated from the first lead frame;
An aluminum (Al) layer formed on at least one side of the first and second lead frames;
And a distributed Bragg reflector layer formed on an upper surface of the aluminum (Al) layer and formed by alternately stacking first and second refractive films having different refractive indices.
The method of claim 1,
The aluminum (Al) layer is formed on the surface of the first and second lead frame by vacuum deposition.
The method of claim 1,
The first and the second refractive film is a lead frame, characterized in that each made of a light transmitting material.
The method of claim 1,
The first refractive film is a lead frame, characterized in that containing any one material of Ta 2 O 5 , ITO, TiO 2 , ZrO 2 and Si 3 N 4 .
The method of claim 1,
The second refractive film is SiO 2 , Al 2 O 3 And a material of any one of MgO.
The method of claim 1,
The distributed Bragg reflector layer is formed in a region where the LED chip of the first lead frame is to be mounted.
The method of claim 1,
The distributed Bragg reflector layer is a lead frame, characterized in that the connection portion to be electrically connected to the light emitting diode chip is mounted.
The method of claim 7, wherein
And the connection part is a groove part formed to expose the aluminum (Al) layer on a bottom surface of the dispersion Bragg reflector layer.
A package body having a lead frame; And
A light emitting diode chip mounted on the package body and electrically connected to the lead frame;
The lead frame,
A first lead frame having a region in which the LED chip is to be mounted;
A second lead frame separated from the first lead frame;
An aluminum (Al) layer formed on at least one side of the first and second lead frames; And
And a distributed Bragg reflector layer formed on an upper surface of the aluminum (Al) layer and formed by alternately stacking first and second refractive films having different refractive indices.
10. The method of claim 9,
The aluminum (Al) layer is formed on the surface of the first and second lead frame by vacuum deposition, the light emitting diode package.
10. The method of claim 9,
The first and the second refractive film constituting the dispersed Bragg reflector layer is a light emitting diode package, characterized in that each made of a light transmitting material.
10. The method of claim 9,
The package body has a recess in which the first and second lead frames are exposed,
The distributed Bragg reflector layer is formed on the upper surface of the first and second lead frame exposed to the recess portion.
10. The method of claim 9,
The distributed Bragg reflector layer is a light emitting diode package, characterized in that the connection portion is formed to be electrically connected to the light emitting diode chip is mounted.
The method of claim 13,
The connection part is a light emitting diode package, characterized in that the groove portion formed to expose the aluminum (Al) layer on the bottom surface of the dispersion Bragg reflector layer.
Patterning the raw material substrate to form a first lead frame and a second lead frame having a region in which the LED chip is to be mounted;
Forming an aluminum (Al) layer on at least one side of the first and second lead frames;
And alternately stacking first and second refractive films having different refractive indices on the aluminum (Al) layer to form a distributed Bragg reflector layer.
16. The method of claim 15,
The forming of the aluminum (Al) layer is a method of manufacturing a lead frame, characterized in that the vacuum deposition of aluminum (Al) on the surface of the first and second lead frame.
16. The method of claim 15,
And forming an aluminum (Al) coating prevention layer on one side of the first and second lead frames before forming the aluminum (Al) layer.
18. The method of claim 17,
The aluminum (Al) coating prevention layer is a lead frame manufacturing method characterized in that the ultraviolet (UV) photosensitive film.
16. The method of claim 15,
And forming an anti-oxidation layer on the aluminum (Al) layer before forming the dispersed Bragg reflector layer.
16. The method of claim 15,
The package body has a recess in which the first and second lead frames are exposed,
The dispersion Bragg reflector layer is formed on the upper surface of the first and second lead frame exposed to the recess portion.
16. The method of claim 15,
The distributed Bragg reflector layer is a lead frame manufacturing method characterized in that the connection portion to be electrically connected to the light emitting diode chip is mounted.
The method of claim 21,
And the connection part is a groove part formed to expose the aluminum (Al) layer on a bottom surface of the dispersion Bragg reflector layer.
KR1020110116249A 2011-11-09 2011-11-09 Lead frame, manufacturing method the same and light emitting diode using the same KR20130051095A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202990B2 (en) 2014-02-04 2015-12-01 Samsung Display Co., Ltd. Light emitting diode package and backlight unit including the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202990B2 (en) 2014-02-04 2015-12-01 Samsung Display Co., Ltd. Light emitting diode package and backlight unit including the same

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