KR20130047533A - Surface treating system for a substrate having a compact structure and surface treating method for the substrate - Google Patents

Abstract

PURPOSE: A surface treating system for a substrate having a compact structure and the surface treating method are provided to secure a compact system by using a double layer structure. CONSTITUTION: A first process chamber(110) is extended in a horizontal direction. A second process chamber(120) is extended in a vertical direction. A third process chamber(130) is positioned in the lower part of the first process chamber. A first horizontal movement part(141) horizontally moves a substrate to the second process chamber in the first direction. A second horizontal movement part(142) is installed in the second process chamber to horizontally move a substrate(10).

Description

Surface treating system for a substrate having a compact structure and surface treating method for the substrate}

The present invention relates to a substrate surface treatment system and a substrate surface treatment method, and more particularly, to a substrate surface treatment system and a substrate surface treatment method having a compact structure.

Driving elements including a plurality of thin film transistors are formed on a substrate for forming an organic light emitting display or a liquid crystal display.

To this end, a silicon film such as a polysilicon film is formed on the substrate. The polysilicon film forms an amorphous silicon film through a crystallization process such as ELA. This polysilicon film is patterned and used as an active layer of the thin film transistor.

However, the amorphous silicon film and / or the polysilicon film have a silicon oxide film on the surface in a natural state.

The silicon oxide film may adversely affect the crystallization process. In addition, it affects the characteristics of the thin film transistor and can act as a contaminant such as particles during the process. Therefore, the silicon oxide film must be removed before and / or after the crystallization step.

Furthermore, since the surface roughness is rough, the polysilicon film formed through the crystallization process needs to be etched to increase the surface uniformity.

For this reason, surface treatment for etching the silicon film must be performed on the surface of the substrate on which the silicon film is formed.

Prior art document 1 discloses a conventional substrate etching equipment, which is a method of spraying etching liquid onto a substrate while rotating the substrate. However, this method is suitable for small substrate sizes up to, for example, 4th generation (730 * 460mm), but it is difficult to use for large substrates larger than 5.5 generations (1,300 * 1,500mm). This is difficult to rotate the large substrate, even if it can be rotated even if the rotation speed is lowered to 600RPM or less stains after etching occurs. In addition, there is a problem that the etching deviation between the center and the corner occurs, and the liquid splashes on the inner wall of the chamber and bounces back to the substrate, causing stains on the substrate.

To improve this, systems for surface treatment are sometimes arranged in-line, in which case the system carrying out the process may be formed too long. This causes a problem that takes up a lot of space to install the system.

In the case of the prior art document 2, the system is configured in a two-layer structure over the upper side and the lower side, but this is intended to increase the throughput by placing the steps showing the same operation process on the upper side and the lower side. However, in terms of only one process, it can be seen as an inline system that represents a single straight path, so that the length of the entire system remains unchanged.

1: Japanese Patent Laid-Open No. 2004-006618 2: Republic of Korea Patent Publication No. 2007-0048036

In order to overcome the problems and / or limitations of the prior art as described above, the present invention provides a substrate surface treatment system and a substrate surface treatment method capable of having a more compact structure so as not to be restricted in the installation space. There is a purpose.

In order to achieve the above object, the present invention, the first process chamber having an inlet on one side and extending in a horizontal direction with respect to the ground, and extending in a direction perpendicular to the ground, the first process chamber on one side upper A second process chamber having the other side coupled thereto, a third extending in a horizontal direction with respect to the ground, positioned below the first process chamber, having an outlet at one side, and having a second side coupled to the lower side of the second process chamber; A first horizontal moving unit installed in the process chamber, the first process chamber and horizontally moving the substrate in a first direction toward the second process chamber, and a second horizontal moving unit installed in the second process chamber and horizontally moving the substrate. A moving part, a vertical moving part installed in the second process room and coupled to a second horizontal moving part and vertically moving the second horizontal moving part, and installed in the third process room and discharged from the second process room. The substrate opposite to the first direction A substrate horizontal treatment system including a third horizontal moving part configured to horizontally move in a second direction, and a processing module installed in at least one of the first to third process chambers to treat the surface of the substrate; To provide.

According to another feature of the invention, it may include a preliminary humidification unit located in the first process chamber for preliminary humidification of the surface of the substrate.

According to another feature of the present invention, the third process chamber may include at least one of a rinse unit for cleaning the surface of the substrate and a dry unit for drying the surface of the substrate.

According to another feature of the invention, the processing module may be located in the third process chamber.

According to another feature of the invention, the at least one portion of at least one of the first horizontal movement portion to the third horizontal movement portion coupled to at least one of the first horizontal movement portion to the third horizontal movement portion; It may include a tilting driver for tilting to be inclined with respect to the ground.

According to still another feature of the present invention, the first horizontal moving part or the third horizontal moving part includes a plurality of first driving rolls and a plurality of second driving rolls, and the first driving roll is the second driving part. It is located adjacent to the inlet or outlet compared to the roll, the diameter of the first driving roll may be larger than the diameter of the second driving roll.

According to another feature of the invention, the second horizontal moving unit may include a plurality of drive rolls.

According to another feature of the invention, the processing module includes a liquid jet module and an air jet module coupled integrally, the liquid jet module is at least one kind of etching liquid capable of etching the silicon film on the surface of the substrate It is provided to spray toward the surface of the substrate, the air injection module may be provided to inject liquid air toward the surface of the substrate.

According to another feature of the invention, the liquid injection module and the air injection module may be provided to operate at the same time.

According to another feature of the invention, the treatment module may include a liquid injection module having a plurality of spray nozzles.

According to another feature of the invention, at least one of the substrate and the processing module may be provided to linearly move along the longitudinal direction of the substrate.

The present invention also provides a first horizontal moving step of horizontally moving a substrate in a first direction, a vertical lowering step of lowering the substrate in a vertical direction, and the substrate in the first direction to achieve the above object. Between the second horizontal movement step of moving horizontally in the second direction opposite to the second direction, and any two steps of the first horizontal movement step, the vertical lowering step and the second horizontal movement step, the surface with respect to the surface of the substrate It provides a substrate surface treatment method comprising the step of performing a treatment.

According to another feature of the invention, the first horizontal movement step may include a step of preliminary humidification with respect to the surface of the substrate.

According to another feature of the invention, the second horizontal movement step may include at least one of the step of cleaning and drying the surface of the substrate.

According to another feature of the invention, the step of performing the surface treatment, may be located between the vertical lowering step and the second horizontal movement step.

According to another feature of the present invention, at least one of the first horizontal moving step, the vertical falling step and the second horizontal moving step may include tilting the substrate to be inclined with respect to the ground.

According to another feature of the invention, the step of tilting may be a step of tilting the substrate so that the surface of the substrate is inclined with respect to the direction perpendicular to the first direction or the second direction.

According to another feature of the present invention, the performing of the surface treatment may include providing at least one of at least one kind of etching liquid and liquid air capable of etching the silicon film on the surface of the substrate to the surface of the substrate. It may include.

According to another feature of the invention, the step of performing the surface treatment, it is possible to provide the etching liquid and the provision of liquid air at the same time.

According to the present invention as described above, by implementing a surface treatment system of a substrate having a two-layer structure it is possible to configure the system more compact, it is possible to reduce the constraints of the space in which the equipment is installed.

In addition, application to large area substrates may be more useful.

In addition, the silicon oxide film can be etched together with the cleaning of the surface of the polysilicon film by the first liquid and the second liquid, and the smoothness of the surface of the polysilicon film after the silicon oxide film is etched can be further improved.

In addition, by providing the first liquid and the second liquid in different time zones, the degree of etching of the first liquid and the second liquid which are etchants can be adjusted.

By providing the third liquid between the first liquid and the second liquid, which are different kinds of etchant, the buffering function enables precise control of the degree of etching, and the desired etching rate is achieved by mixing the first liquid and the second liquid. It is possible to prevent the problem to be changed and the resulting decrease in productivity.

The present invention also removes at least one of the first to third liquids from the surface of the substrate through the provision of liquid air so that at least two liquids of the first to third liquids do not mix on the surface of the substrate, Etching accuracy as described above can be obtained.

1 is a configuration diagram schematically showing the configuration of a substrate surface treatment system according to an embodiment of the present invention;
2A and 2B illustrate a first driving roll and a second driving roll;
3 is a plan view of the dry unit of FIG.
4 is a configuration diagram illustrating a first horizontal moving part and a vertical moving part installed in the process chamber of FIG. 1;
5 is a side cross-sectional view showing the first horizontal moving part and the operation water drainage device of FIG. 4;
4 to 8 is a schematic view showing different embodiments of the surface treatment apparatus of the substrate of the present invention each including a spray module,
9 is a cross-sectional view showing a preferred embodiment of the injection module.
10 is a cross-sectional view showing another preferred embodiment of the injection module,
11 is a schematic view showing another embodiment of a surface treatment apparatus for a substrate of the present invention;
12 is a configuration diagram schematically showing still another embodiment of the surface treatment apparatus of the substrate of the present invention;
13 is a schematic view showing another embodiment of a surface treatment apparatus for a substrate of the present invention;
14 is a schematic view showing another embodiment of the surface treatment apparatus of the substrate of the present invention;
15 is a schematic view showing another embodiment of a surface treatment apparatus for a substrate of the present invention;
16 is a schematic view showing the configuration of a substrate surface treatment system according to another embodiment of the present invention;
17A and 17B are schematic structural diagrams showing states in which the substrate is tilted, respectively;
18 is a configuration diagram illustrating a second horizontal moving unit.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a configuration diagram schematically showing the configuration of a substrate surface treatment system according to an embodiment of the present invention.

As shown in FIG. 1, the substrate surface treatment system 100 according to an exemplary embodiment of the present invention includes a first process chamber 110, a second process chamber 120, and a third process chamber 130. do.

The first process chamber 110 is coupled to an upper portion of the sidewall 123 of the second process chamber 120 and is formed to extend in a horizontal direction with respect to the ground. An inlet 111 is provided at one side of the first process chamber 110, and the substrate 10 is introduced into the first process chamber 110 by a separate transfer robot (not shown) through the inlet 111. .

The second process chamber 120 extends in a direction perpendicular to the ground, and one side is coupled to the other side of the first process chamber 110.

The substrate inlet 121 and the substrate outlet 122 are provided at one sidewall 123 perpendicular to the ground in the second process chamber 120. At this time, the substrate inlet 121 is configured to be located above the substrate outlet 122. The substrate inlet 121 and the substrate outlet 122 are arranged inline in a direction perpendicular to the ground, and each of the substrate inlet 121 extends in a direction parallel to the ground so that the substrate 10 may be formed in the second process chamber 120. Inlet and outlet. The sidewall 123, the substrate inlet 121, and the substrate outlet 122 do not necessarily need to exist, and only a part of the sidewall 123 may be provided.

The third process chamber 130 extends in a horizontal direction with respect to the ground and is located below the first process chamber 110. An outlet 131 is provided at one side of the third process chamber 130, and the other side of the third process chamber 130 is coupled to one lower side of the second process chamber 120. The third process chamber 130 is in communication with the substrate outlet 122.

A transport robot (not shown) may be positioned outside the exit 131 of the third process chamber 130 to finish the surface treatment and to exit the substrate 10 from the system 100.

The first horizontal chamber 141 is provided in the first process chamber 110 to horizontally move the substrate 10 in the first direction X1 toward the second process chamber 120. The third horizontal chamber 143 is provided in the third process chamber 130 to horizontally move the substrate 10 in a second direction X2 opposite to the first direction X1.

In the second process chamber 120, a second horizontal moving part 142 is disposed to horizontally move the substrate 10 in the first direction X1 and the second direction X2, and the second horizontal moving part 142 is disposed. In the vertical movement unit 150 is coupled to the vertical movement of the second horizontal movement unit 142 in the vertical direction.

When the second horizontal moving part 142 is raised to a position corresponding to the substrate inlet 121, the second horizontal moving part 142 moves horizontally in the first direction X1 from the left to the right when the substrate 10 is viewed in FIG. 1. When the substrate 10 is lowered to a position corresponding to the substrate outlet 122, the substrate 10 is horizontally moved in a second direction X2 from right to left as shown in FIG. 1.

The first horizontal moving part 141 includes a plurality of first driving rolls 144 and second driving rolls 145.

The first driving roll 144 is located closer to the inlet 121 than the second driving roll 145. As shown in FIGS. 2A and 2B, the diameter d1 of the first driving roll 144 is larger than the diameter d2 of the second driving roll 145.

Since the first driving roll 144 is located adjacent to the inlet 121, when the substrate 10 flows into the inlet 111, the inflow speed of the substrate 10 can be increased, so that the substrate 10 can be quickly removed. 1 may flow into the process chamber 120.

Since the second driving roll 145 transfers the substrate 10 while the substrate 10 is subjected to a specific process, the second driving roll 145 may be formed smaller than the first driving roll 144, thereby precisely increasing the transfer speed of the substrate 10. Can be controlled.

The third horizontal moving part 143 may also include a plurality of first driving rolls 144 and second driving rolls 145.

The first driving roll 144 is located closer to the outlet 131 than the second driving roll 145. As described above, the diameter d1 of the first driving roll 144 is larger than the diameter d2 of the second driving roll 145.

Since the first driving roll 144 is located adjacent to the outlet 131, when the substrate 10 flows out through the outlet 131, the outflow speed of the substrate 10 can be increased, so that the substrate 10 can be quickly removed. It may flow out of the third process chamber 130.

Since the second driving roll 145 transfers the substrate 10 while the substrate 10 is subjected to a specific process as described above, the second driving roll 145 is formed to be smaller than the first driving roll 144 to transfer the substrate 10. Speed can be controlled precisely.

The second horizontal moving part 142 may also include the second driving roll 145 having a diameter smaller than that of the first driving roll 144. This is to allow the second horizontal moving unit 142 to precisely move within the second process chamber 120.

In the above embodiment, the first driving roll 144 provided in the first horizontal moving part 141 to the third horizontal moving part 143 may be a driving roll having the same diameter, but is not limited thereto. The first horizontal moving part 141 to the third horizontal moving part 143 may use driving rolls having different diameters, respectively.

In the first process chamber 110, a loading zone 151 and a preliminary humidification zone 152 may be sequentially positioned between the inlet 111 and the second process chamber 120. The first driving roll 144 of the first horizontal moving part 141 is located in the loading zone 151 and the second driving roll 145 is located in the preliminary humidification zone 152.

A first plasma supply unit 161 may be installed in the loading zone 151 to perform plasma treatment on the surface of the substrate 10 flowing from the inlet 111.

A second plasma supply unit 162 may be further installed in the preliminary humidification zone 152, thereby allowing the surface of the substrate 10 to be sufficiently activated before being processed in the third process chamber 130.

The first plasma supply unit 161 and the second plasma supply unit 162 may not necessarily be provided at all, and any one of them may be provided.

The preliminary humidification unit 163 may be arranged in the preliminary humidification zone 152 to spray pure water DI on the surface of the substrate 10 to preliminarily humidify the surface of the substrate 10.

The second process chamber 120 converts the traveling direction of the substrate 10 received from the first process chamber 110 in the opposite direction, and transmits it to the third process chamber 130. Therefore, the second process chamber 120 functions as a redirection zone.

The third process chamber 130 includes a surface treatment zone 153, a rinse zone 154, a dry zone 155, and an unloading zone 156 between the second process chamber 120 and the outlet 131. Sequentially located. The first driving roll 144 of the third horizontal moving part 143 is located in the unloading zone 156 and the second driving roll 145 is the surface treatment zone 153, the rinse zone 154, and the dry zone 155. )

The first rinse unit 164 and the second rinse unit 165 are sequentially disposed in the rinse zone 154. The first rinse unit 164 and the second rinse unit 165 spray pure water on the surface of the substrate 10 emerging from the surface treatment zone 153 so that the etching solution does not remain on the surface of the substrate 10.

A water jet unit 166 is further disposed between the first rinse unit 164 and the second rinse unit 165 to clean the surface of the substrate 10 through high pressure spraying.

The first rinse unit 164, the second rinse unit 165, and the water jet unit 166 are not necessarily all provided, and at least one of them may be provided.

The first rinse unit 164, the second rinse unit 165, and the water jet unit 166 may be located on the upper and lower portions of the substrate 10, as shown in FIG. 1. Accordingly, pure water may be provided to the upper and lower surfaces of the substrate 10 to clean the substrate 10.

The dry unit 167 may be disposed in the dry zone 155.

As shown in FIG. 3, the dry unit 167 includes a linear nozzle unit 168 for injecting air, which is arranged to be inclined with respect to the horizontal movement direction of the substrate 10. Can be. Therefore, the nozzle unit 168 injects air diagonally from one corner of the substrate 10 to the opposite corner. In this way, the air blowing of the dry unit 167 starts at the edge of the substrate 10 and ends at the opposite edge in the diagonal direction, thereby further increasing the water removal efficiency on the surface of the substrate 10. As shown in FIG. 1, the dry unit 167 may be disposed on both the upper and lower portions of the substrate 10. Although the dry unit 167 has shown that the substrate 10 moves horizontally while the nozzle unit 158 is fixed, the present invention is not limited thereto, and the nozzle unit 158 is formed of the substrate 10. It is also possible to move horizontally in the horizontal movement direction.

The first fan filter unit 114 is installed in the first process chamber 110. The first fan filter unit 114 exhausts the inside of the first process chamber 110 so that the inside of the first process chamber 110 is kept in a clean state and particles are not attached to the surface of the substrate 10. do.

The second fan filter unit 124 is installed in the second process chamber 120, and the third fan filter unit 134 is installed in the third process chamber 130. The second fan filter unit 124 removes particles in the second process chamber 120, and the third fan filter unit 134 removes particles in the third process chamber 130.

Next, the processing apparatus of the board | substrate in surface treatment zone 153 is demonstrated.

Surface treatment apparatus for a substrate according to an embodiment of the present invention installed in the surface treatment zone 153 is the processing module 180, the control unit 70 and the first storage tank 35 to the third storage tank as shown in FIG. And 55.

The substrate 10 before being processed by the present invention may include various kinds of substrates used for display, in particular, including a base substrate 11, a silicon film 12, and a silicon oxide film 13. .

The base substrate 11 may include a glass, plastic, or metal substrate. Although not shown in the drawings, an insulating film made of an organic material and / or an inorganic material may be further provided on the surface of the base substrate 11.

The silicon film 12 may be obtained by forming an amorphous silicon film on the surface of the base substrate 11. The silicon film 12 may be a polysilicon film through a crystallization process in a subsequent process. The crystallization process may be a laser crystallization process such as ELA, but is not necessarily limited thereto, various crystallization processes may be used. The polysilicon film obtained by crystallizing the silicon film 12 may be used as an active layer of a thin film transistor of a display. Of course, the amorphous silicon film may also be used as an active layer of the thin film transistor through patterning and doping.

The silicon oxide film 13 is formed on the surface of the silicon film 12. The silicon oxide film 13 is an oxide film formed naturally by combining the surface of the silicon film 12 with oxygen or nitrogen in air, and is generally formed to have a thickness of 5 to 1,000 mW.

As described above, the substrate 10 is not limited to a substrate on which the silicon film 12 is formed on the base substrate 11, and various kinds of substrates including a silicon film, such as a silicon wafer including a silicon film, may be used. Of course, it can be applied.

The processing module 180 is to selectively provide the first liquid to the third liquid on the surface of the substrate 10, and strictly on the surface of the silicon oxide film 13 formed on the surface of the silicon film 12. It is for selectively providing the first to third liquid.

The first liquid is stored in the first reservoir 35, and includes a solution of a component capable of etching the silicon oxide film 13 formed on the surface of the silicon film 12. In one preferred embodiment of the present invention, the first liquid may be a solution containing an ozone solution. The first liquid may use a lower etching rate for the silicon oxide film 13 than a second liquid, which will be described later. Instead, the first liquid may function as a cleaning agent for cleaning the organic material on the surface of the substrate 10. For this reason, the first liquid can be replaced with a neutral or alkaline detergent.

The second liquid is stored in the second storage tank 45, and may etch the silicon oxide film 13 formed on the surface of the silicon film 12, and has a component different from that of the first liquid. A solution having a higher etching rate for the silicon oxide film is used. In one preferred embodiment of the present invention, the second liquid may be a solution containing a hydrofluoric acid or ammonium fluoride solution.

The third liquid is stored in the third storage tank 55, and at least one of the first liquid and the second liquid may be diluted from the surface of the substrate 10, and according to an exemplary embodiment of the present invention. According to the present invention, the water may include water, and it is preferable to use deionized pure water (DI water). The third liquid may function as a buffer water to stop the first liquid and the second liquid, which are etchant, on the surface of the substrate 10.

The processing module 180 is provided as a liquid injection module to provide the first liquid to the third liquid to be evenly spread on the substrate 10, for this purpose, spaced apart from the surface of the substrate 10 by a predetermined distance. The first liquid to the third liquid is provided on the surface of the substrate 10 while linearly reciprocating in one direction along the longitudinal direction of the furnace substrate 10.

The processing module 180 may be designed to function as a function of selectively supplying the first to third liquids to the processing module 180. To this end, a separate pump means (not shown) for discharging the first liquid to the third liquid to the processing module 180 may be provided.

A first opening / closing side 36 to a third opening / closing side 56 may be interposed between the first storage tank 35 to the third storage tank 55 and the processing module 180. The first opening and closing 36 to the third opening and closing 56 is connected to the control unit 70, respectively, the electronic valve which is controlled by the control unit 70 can be used.

Meanwhile, in FIG. 4, all of the first reservoirs 35 to 55 are provided, but the present invention is not necessarily limited thereto. Although not shown in the drawings, the first reservoirs 35 and the second reservoirs 55 are provided. Only the reservoir 45 is provided, and the substrate smoothness can be obtained together with the removal of the silicon oxide film 13 by providing the first liquid and the second liquid on the surface of the substrate 10 at different time periods as will be described later.

The substrate 10 may be provided in the order of the first liquid, the third liquid, and the second liquid. When the processing module 180 operates while reciprocating, it may be provided in the order of the first liquid, the third liquid, the second liquid, the third liquid, and the first liquid.

The order of providing the first liquid to the third liquid can be changed according to the process conditions, for example, the second liquid, the third liquid, and the first liquid may be provided in the order of the first liquid, and the third liquid. Or in the order of the second liquid and the third liquid. Of course, even in this case, when the processing module 180 operates while reciprocating, the reverse order may be repeatedly provided.

In addition, the third liquid may be provided in the order of the first liquid and the second liquid without providing the third liquid. Also in this case, when the processing module 180 operates while reciprocating, the reverse order may be repeated.

The present invention effectively controls the etching degree of the silicon oxide film 13 simultaneously with cleaning the surface of the substrate 10 by providing the first liquid and the second liquid, which are etchants having different etching rates, to the substrate 10 at different times. In addition, the smoothness of the surface of the silicon film 12 from which the silicon oxide film 13 is removed can be improved.

In addition, by providing the third liquid to the substrate 10, the first liquid and / or the second liquid remaining on the surface of the substrate 10 may be washed with the third liquid, thereby providing the substrate 10. The first liquid and the second liquid remaining on the surface may be mixed to prevent a problem of failing to obtain a desired etching rate in advance. As a result, accurate etching rate management is possible and quality uniformity can be increased even when applied to mass production process.

The provision of the first liquid to the third liquid as described above is not limited to one round trip scan and includes the case where at least two liquids of the first liquid to the third liquid are selectively provided in at least two or more scans per liquid. do.

4 illustrates an embodiment in which the first to third liquids are selectively provided through one processing module 180, but the present invention is not necessarily limited thereto.

For example, in the apparatus for treating a surface of a substrate according to another exemplary embodiment of the present invention as shown in FIG. 5, the processing module 180 includes first to third processing modules 181 to 183. The first processing module 181 to the third processing module 183 are all provided as a liquid injection module.

The first processing module 181 to the third processing module 183 are connected to the first reservoir 35 to the third reservoir 55, respectively, and the first reservoir 35 to the third reservoir 55 and the first reservoir. The first open / close side 36 and the third open / close side 56 are interposed between the processing module 181 and the third processing module 183, respectively. At this time, each of the first processing module 181 to the third processing module 183 may be arranged so as not to interfere with each other in the movement of each other.

In this case, the first to third liquids may be discharged in various ways as in the above-described embodiment of FIG. 4.

On the other hand, the first processing module 181 to the third processing module 183 may be provided to be coupled to each other to operate integrally.

6 illustrates another embodiment of the processing module 180, wherein the processing module 180 includes a first processing module 181 and a second processing module 182. Each of the first processing module 181 and the second processing module 182 is connected to any two storage tanks of the first storage tank 35 to the third storage tank 55, and is connected to form a different combination. .

In the case of the embodiment shown in FIG. 6, the first processing module 181 is connected to the first reservoir 35 and the third reservoir 55, and the second processing module 182 is the second reservoir 45. And a third reservoir 55. Therefore, the third opening and closing sides 56a and 56b are installed between the third reservoir 55 and the first processing module 181 and between the third reservoir 55 and the second processing module 182, respectively. have.

In this case, the first to third liquids may be discharged in various ways as in the embodiment of FIG. 4. In addition, the first processing module 181 and the second processing module 182 may be provided to be coupled to each other to move integrally.

FIG. 7 illustrates a configuration of a surface treatment apparatus of a substrate according to another exemplary embodiment of the present invention, wherein the processing module 180 includes a liquid jet module 180a and an air jet module 180b.

Both the liquid injection module 180a and the air injection module 180b are connected to the controller 70, and the liquid injection module 180a may be applied to the processing module 180 illustrated in FIGS. 4 to 6.

The air injection module 180b is for providing liquid air to the surface of the substrate 10 and is movable in the same direction as the liquid injection module 180a. The liquid injection module 180a and the air injection module 180b may be configured to drive in the horizontal direction by separate linear driving means, respectively.

The air injection module 180b is connected to the air tank 65. An air pump (not shown) may be provided in or outside the air injection module 180b. In addition, the air injection module 180b is connected to the control unit 70 to control the injection of liquid air by the action of the control unit 70.

The fourth open / close side 66 is further connected between the air injection module 180b and the air tank 65. The fourth open / close side 66 is connected to the control unit 70 to the control unit 70. The electronic valve may be controlled by opening and closing.

The air injection module 180b is provided with an injection nozzle suitable for injecting liquid air, and a nozzle of a type capable of injecting an air curtain for liquidation may be used.

The liquid liquefied air is provided to the substrate 10 in the previous step to remove at least one of the first liquid to the third liquid remaining on the surface of the substrate 10 by air pressure, thereby removing the first liquid. The third to third liquids do not mix with each other on the surface of the substrate 10, so that the concentration of etchant, such as the first liquid and the second liquid, in particular, varies from the originally intended concentration on the surface of the substrate 10. Can be prevented. Therefore, the liquid liquefied air can precisely control the etching rate of the first liquid and the second liquid, and the like, and the buffering effect by the third liquid can also be easily controlled.

Although the air injection module 180b is illustrated as having only one in FIG. 7, the present invention is not limited thereto, and at least two of the first to third liquids are mixed with each other by various numbers according to the design conditions of the apparatus. You can do that. For example, as shown in FIG. 8, two air injection modules 180b may be disposed at the front and the rear of the liquid injection module 180a.

The liquid air may be injected to overlap at least one of the first liquid to the third liquid. In this case, the overlap means that liquid air is injected onto the substrate 10 while at least one of the first to third liquids is injected to act on the substrate 10. According to an embodiment of the present invention, the air injection module 180b is operated simultaneously with the liquid injection module 180a so that liquid air is also injected while at least one of the first liquid to the third liquid is injected.

9 illustrates an example of the processing module 180 described above. In the embodiment according to FIG. 9, the first processing module 181 and the second processing module 182 are combined to form a single liquid injection module 180a, and the front and rear surfaces of the liquid injection module 180a are centered. Two air injection modules 180b are disposed in the.

The liquid injection module 180a includes a first processing module 181 and a second processing module 182. Each of the first processing module 181 and the second processing module 182 has two plate members. It is formed by being coupled to each other, the liquid injection hole 184 is formed in each inside and the liquid supply pipe 185 is connected to the outside. The liquid supply pipe 185 may be connected to an external reservoir (not shown).

The first liquid and the third liquid may be selectively injected through the first processing module 181, and the second liquid may be injected through the second processing module 182. However, the present invention is not limited thereto, and the second liquid and the third liquid may be selectively injected through the first processing module 181, and the first liquid may be injected through the second processing module 182. Can be sprayed. In addition, the above-described first liquid and the second liquid may be selectively injected through the first processing module 181, and the above-mentioned third liquid may be injected through the second processing module 182.

The air injection module 180b is also formed by coupling two plate members to each other, and an air injection hole 186 is formed therein, and an air supply pipe 187 is connected to the outside. The air supply pipe 187 may be connected to an external air tank (not shown).

The liquid ejecting module 180a and the air ejecting module 180b have a structure extending linearly in the width direction of the substrate 10 and are fixed by coupling brackets 188 at both ends thereof. The coupling bracket 188 is configured to adjust the coupling angle of the air injection module 180b so that the injection angle of the liquefied air through the air injection module 180b may be adjusted.

Since the processing module 180 can spray the etching liquid, the cleaning liquid, and the liquid air by a single module, the entire processing equipment, in particular, the process chamber 110 can be compactly constructed. This is because the linear motor facility for reciprocating the processing module 180 can be greatly reduced, and the configuration of the pump and valve facility can also be reduced.

10 illustrates another example of the processing module 180, and may be particularly used as a liquid injection module.

The processing module 180 according to an embodiment of the present invention illustrated in FIG. 10 includes a first supply pipe 201 and a second supply pipe 202 connecting both ends of the first supply pipe 201 to each other.

First blocks 203 are connected to both ends of the first supply pipe 201. The second supply pipe 202 is provided with a length corresponding to the length of the first supply pipe 201, and second blocks 204 are connected to both ends thereof.

A third supply pipe 206 is connected between the first blocks 203 at both ends of the first supply pipe 201 and the second blocks 204 at both ends of the second supply pipe 202, thereby providing a first supply pipe ( 201) and the second supply pipe 202 are connected to each other. The fourth supply pipe 207 is connected to one of the second blocks 204 to supply the liquid. The fourth supply pipe 207 may be connected to one of the first blocks 203. The fourth supply pipe 207 may be connected to an external reservoir (not shown).

By connecting both ends of the first supply pipe 201 to the second supply pipe 202 in this way, the first supply pipe 201 can be supplied with a relatively uniform liquid throughout its longitudinal direction, and thus, each nozzle ( Deviation with respect to the amount of the liquid discharged from the 210 can also be reduced.

The processing module 180 according to the embodiment shown in FIGS. 9 and 10 may be applied to all the embodiments according to FIGS. 4 to 8.

11 illustrates another embodiment of the surface treatment apparatus installed in the surface treatment zone 153.

The processing module 180 of the embodiment shown in FIG. 11 includes a liquid jet module 180a and an air jet module 180b. The liquid injection module 180a may include the processing module 180 configured to include a plurality of spray nozzles 300.

The spray nozzles 300 are disposed along the longitudinal direction of the substrate 10 and provided to spray any one of the first liquid to the third liquid at a time over the entire area of the substrate 10. The spray nozzles 300 may allow the processing module 180 shown in FIG. 10 to be arranged in a plurality of rows.

In this structure, the liquid ejection module 180a may be fixed and may simultaneously eject the liquid over the entire surface of the substrate 10. Of course, in this case, the first to third liquids may be selectively sprayed onto the substrate 10.

In addition, the air injection module 180b may move along the surface of the substrate and inject liquid air to the substrate.

In the state in which the spray nozzles 300 are fixed, the substrate 10 may swing while moving back and forth. At this time, the swing distance of the substrate 10 may be greater than or equal to the distance between the spray nozzles 300, and thus liquid may be evenly sprayed over the entire surface of the substrate 10.

In FIG. 11, all the spray nozzles 300 are illustrated as being connected to the first reservoir 35 to the third reservoir 55 via the first opening 36 and the third opening 56. 12 is not necessarily limited thereto, and as shown in FIG. 12, the first reservoir 35 to the third reservoir 55 may be connected to the first spray nozzles 301 to the third spray nozzles 303, respectively. Can be. At this time, it is preferable that the first spray nozzles 301 to the third spray nozzles 303 are alternately arranged. In this case, the swinging distance of the substrate 10 may be greater than or equal to the distance between the first spray nozzles 301, the second spray nozzles 302, or the third spray nozzles 303.

Although not shown in the drawings, some of the spray nozzles 300 may be disposed in any two reservoirs of the first reservoir 35 to the third reservoir 55, and the others may be the first reservoir 35 to the third reservoir ( Each of which may be connected to one reservoir.

Meanwhile, in the embodiments of FIGS. 11 and 12, all of the air injection modules 180b are provided, but the present invention is not limited thereto. As shown in FIG. 13, the substrate without the air injection module 180b may be used. The liquid on the surface of the substrate 10 can be removed by tilting the 10 by a predetermined angle. At this time, the tilting angle may be only about 5 °. FIG. 13 illustrates a structure without the air injection module 180b in the embodiment according to FIG. 12, but the present invention is not necessarily limited thereto, and although not shown in the drawings, the air injection module ( Of course, the structure without 180b) is equally applicable.

Although the embodiment according to FIG. 11 described above uses a plurality of rows of spray nozzles 300, as shown in FIG. 14, spray nozzles 300 provided in one row may be used. The spray nozzle 300 may allow the processing module 180 illustrated in FIG. 10 to be arranged in a row.

In such a structure, the width of the front and rear fluctuations of the substrate 10 becomes wider, so that the liquid can be fluctuated at least more than the length of the substrate 10 so that the liquid is sufficiently supplied over the entire surface of the substrate 10. However, the present invention is not limited thereto, and in this case, the spray nozzle 300 may perform a reciprocating linear motion along the longitudinal direction of the substrate 10.

In the embodiment according to FIG. 14, the first storage tank 35 to the third storage tank 55 are connected to the spray nozzle 300 provided in one row through the first opening 36 and the third opening 56. However, the present invention is not necessarily limited thereto, and as shown in FIG. 14, the first spray nozzles 301 to the third spray, each of which is provided with one row of the first reservoir 35 to the third reservoir 55. May be connected to the nozzle 303. At this time, it is preferable that the first spray nozzles 301 to the third spray nozzle 303 are alternately arranged.

14 and 15, the liquid on the surface of the substrate 10 may be removed by tilting the substrate 10 by tilting the substrate 10 without the air jetting module. However, the present invention is not limited thereto, and as shown in the embodiments of FIGS. 11 and 12, liquid air may be sprayed onto the surface of the substrate 10 using the air injection module 180b.

As described above, the substrate surface treatment apparatus according to FIG. 1 performs substrate surface treatment by the following method.

First, the substrate 10 is introduced into the first process chamber 110 disposed above the inlet 111 using a transport robot (not shown), and the loading zone 151 and the preliminary load of the first process chamber 110 are provided. It is pretreated while passing through the humidification zone 152.

The substrate 10 is horizontally moved by the first driving roll 144 of the loading zone 151 in the first direction X1, which is a left to right direction as shown in FIG. 1. In this case, the surface of the substrate 10 may be plasma-processed by the first plasma supply unit 161 provided in the loading zone 151.

Next, the substrate 10 is horizontally moved in the preliminary humidification zone 152 by the second driving roll 145 in the first process chamber 110.

In the preliminary humidification zone 152, the substrate 10 is plasma treated by the second plasma supply unit 162, and the surface of the substrate 10 is humidified by the preliminary humidification unit 152.

As the second driving roll 145 moves the substrate 10 further horizontally in the first direction X1, the substrate 10 flows into the second process chamber 120 through the substrate inlet 121. At this time, the second horizontal moving part 142 is raised to a position corresponding to the substrate inlet 121 in the second process chamber 120, and the substrate 10 is the second horizontal moving part 142. It is horizontally moved in the first direction (X1) by the second driving roll 145 to be aligned on the second horizontal moving part 142.

Next, the second horizontal moving part 142 is lowered by the vertical moving part 150.

Thereafter, the second horizontal moving part 142 transfers the substrate 10 in a second direction X2 opposite to the first direction X1, and the substrate is transferred to the second process chamber through the substrate outlet 122. Out of 120, it is introduced into the surface treatment zone 153 of the third process chamber 130.

The surface of the substrate 10 is processed by the processing module 180 in the surface treatment zone 153. The processing module 180 selectively provides the first liquid to the third liquid on the surface of the substrate 10. That is, the processing module 180 sprays the first liquid and / or the second liquid capable of etching the silicon oxide film and / or the silicon film on the surface of the substrate 10 onto the surface of the substrate 10, and at this time, the third liquid It can be sprayed on the surface of the substrate 10 in a suitable combination with. The selective combination of the first to the third liquid is as described above.

In the selective combination of the first to third liquids, liquid liquid air may also be provided to the substrate 10. Optional combinations of the first to third liquids and liquid air are as described above.

After all the work in the surface treatment zone 153 is finished, the third horizontal moving part 143 further transfers the substrate 10 in the second direction X2. The substrate 10 flows into the rinse zone 154.

Pure water is sprayed on the surface of the substrate 10 in the rinse zone 154 to clean the surface of the substrate 10. Specifically, the first rinse unit 164 and the second rinse unit 165 spray pure water on the surface of the substrate 10 exiting from the process chamber 110 so that the etching solution does not remain on the surface of the substrate 10. The water jet unit 166 positioned between the first rinse unit 164 and the second rinse unit 165 cleans the surface of the substrate 10 through high pressure spraying.

Next, the substrate 10 is further moved in the second direction X2 to be transferred to the dry zone 155. The dry zone 155 undergoes a drying process in which moisture on the surface of the substrate 10 is removed. Specifically, the nozzle unit of the dry unit 167 moves to remove moisture on the surface of the substrate 10.

Thereafter, the substrate 10 is further moved in the second direction X2 and discharged through the unloading zone 156 through the outlet 131.

As the substrate 10 flows into the system 100, the first fan filter unit 114 in the upper part of the first process chamber 110, the second fan filter unit 124 in the upper part of the second process chamber 120, and the third The third fan filter unit 134 installed in the process chamber 130 is operated simultaneously and / or sequentially to keep the interior of the system 100 clean and prevent particles from adhering to the substrate 10 surface.

Thus, in the case of the substrate surface treatment system and the substrate surface treatment method of the present invention, the surface treatment of the substrate 10 is performed in a U-shape as a whole, so that the system can be configured to be significantly more compact than the system is configured inline. Therefore, the installation space can be reduced accordingly.

Figure 16 illustrates another embodiment of a substrate surface treatment system of the present invention. 16 is the same as the embodiment according to FIG. 1 described above.

However, the vertical moving part 150 disposed in the second process chamber 120 includes the tilting driving part.

Referring to FIG. 16, the substrate 10 is introduced into the second process chamber 120. As shown in FIG. 17A, the substrate 10 is horizontally moved in the first direction X1, and the substrate 10 has a first position P1 in which the surface thereof is horizontal to the ground. do. Thereafter, while the substrate 10 is vertically lowered, the substrate 10 is tilted such that the surface of the substrate 10 is inclined at an acute angle θ to the ground by the aforementioned tilting driver. At this time, the tilting means that the surface of the substrate 10 is tilted so as to be inclined at an acute angle θ with respect to the direction Y perpendicular to the first direction X1. In the second position P2 state in which the substrate 10 is in a tilted state, the substrate 10 is horizontally moved in the second direction X2 to leave the second process chamber 120.

FIG. 18 illustrates a second horizontal moving part 142 and a vertical moving part 150 installed in the second process chamber 120.

As shown in FIG. 18, the second horizontal moving unit 142 includes a frame 146. The frame 146 extends in the first direction X1 and is spaced parallel to each other and extends in the direction Y perpendicular to the first direction X1 and the first frame 146a and the second frame 146b. And a third frame 146c and a fourth frame 146d spaced apart from each other in parallel. The first frame 146a to the fourth frame 146d are combined to form a substantially rectangular shape. The third frame 146c positioned at one end of the first direction X1 is positioned lower than other frames so that the substrate is easily introduced.

Support rollers 148 supporting side surfaces of the substrate are installed on upper surfaces of the first frame 146a and the second frame 146b. In addition, support rollers 148 are installed on an upper surface of the fourth frame 146d positioned at the other end of the first direction X1.

As shown in FIG. 18, a plurality of support rods 147 are disposed at regular intervals in the first frame 146a and the second frame 146b. Each of the supporting rods 147 is provided with a plurality of second driving rolls 145 spaced apart from each other by a predetermined interval. Both ends of each of the supporting rods 147 are embedded in the first frame 146a and the second frame 146b, respectively. Gears are provided at both ends of each of the supporting rods 147. At least one of the first frame 146a and the second frame 146b is provided with a helical gear, which is rotated by a separate driving unit (not shown). When the helical gear is rotated by the driving unit, the supporting rods 147 are rotated by receiving the rotational force, and thus the second driving rolls 145 rotate at the same time.

As shown in FIG. 18, the vertical moving part 150 is coupled to the bottom surface of the frame 146. The vertical movement unit 150 includes a device capable of reciprocating the frame 146 in the vertical direction, for example, a cylinder device may be used.

The vertical moving part 150 includes a first vertical moving part 150a coupled to a lower part of the first frame 146a and a second vertical moving part 150b coupled to a lower part of the second frame 146b. .

As shown in FIG. 16, when the vertical moving part 150 also functions as a tilting driver, the vertical moving part 150 may tilt while lowering the substrate 10 as shown in FIG. 17A. That is, when the vertical movement unit 150 lowers the substrate 10, the first vertical movement unit 150a is reduced more than the second vertical movement unit 150b so that the substrate 10 naturally moves to the second position ( P2). In this case, the substrate 10 is no longer dropped by the support rollers 148 on the first frame 146a.

In this state, when the second driving rolls 145 are rotated, the substrate 10 is horizontally moved in the second direction X2 as shown in FIG. 17A.

The vertical moving part 150 serving as the tilting driver as described above may be further formed on at least a portion of the third horizontal moving part 143 in FIG. 16. That is, the third horizontal moving part 143 of the surface treatment zone 153 and the rinse zone 154 may be provided with a vertical moving part that also functions as the above-described tilting driving part. Of course, the dry zone 155 may also be provided with a vertical moving part that also functions as a tilting driver.

According to another exemplary embodiment of the substrate surface treatment system of the present invention, the substrate 10 introduced into the first position P1 to the second process chamber 120 simultaneously descends from the second process chamber 120. It is tilted to the second position P2 and exits the second process chamber 120.

Thereafter, in the third process chamber 130, the substrate 10 is tilted again to the first position P1 as shown in FIG. 17B. At this time, as shown in FIG. 16, the position adjusting unit 168 is provided near the bottom of the surface treatment zone 153 of the third process chamber 130, thereby adjusting the position of the substrate 10. The position adjusting unit 168 is provided with a plurality of pins 169 protruding upward, and may be reciprocated in a vertical direction by a separate vertical driving device (not shown).

The position adjusting unit 168 allows the pins 169 to directly support the bottom surface of the substrate 10 when the substrate 10 is tilted to the first position P1 in the surface treatment zone 153. 10) can be stably supported. At this time, the position adjusting unit 168 may be seated on the pins 169 only by the operation of tilting the substrate of the second position (P2) to the first position (P1) without moving up and down.

When the substrate 10 moves to the rinse zone 154 after the process in the surface treatment zone 153 is finished, the substrate 10 is tilted again to the second position P2 and in this tilted state, the second direction X2. Is moved horizontally through at least the rinse zone 154.

In the dry zone 155, the substrate 10 may be tilted to the second position P2, but the substrate 10 is not limited thereto. In the dry zone 155, the substrate 10 may be tilted again to the first position P1. It can be moved horizontally.

In the unloading zone 156, the substrate 10 may be in the first position P1 and may be discharged through the outlet 131.

This tilting of the substrate 10 is more useful when the substrate 10 is a large area substrate.

That is, in the case of the large-area substrate 10, not only the handling of the substrate is very poor, but also a liquid may be accumulated on the surface thereof, which may be a problem. After the substrate is tilted into the surface treatment zone 153 and then restored to the first position P1, the substrate is naturally seated on the pins 169 of the position adjusting unit 168 to adjust the position of the substrate 10. The substrate surface treatment process can be performed immediately without reducing the overall process tack time. In addition, since the rinse proceeds in the tilted state to the second position P2, the cleaning liquid naturally flows on the surface of the substrate, and thus the problem of liquid accumulation on the substrate surface can be solved.

In the above-described embodiment, the tilting of the substrate 10 is limited to being performed in some zones of the second process chamber 120 and the third process chamber 130, but the present invention is not necessarily limited thereto. The substrate 10 may be maintained in the tilted second position P2 in the entire section of the chamber 110 to the third process chamber 130.

If the tilting state is maintained continuously, the size of the equipment in the width direction of the substrate can be reduced, and thus the equipment installation space can be further reduced. It can be further improved, and the application is easy even when the substrate area is increased.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation and that those skilled in the art will recognize that various modifications and equivalent arrangements may be made therein. It will be possible. Therefore, the true scope of protection of the present invention should be defined only by the appended claims.

Claims (19)

A first process chamber having an inlet at one side and extending in a horizontal direction with respect to the ground;
A second process chamber extending in a direction perpendicular to the ground and having the other side of the first process chamber coupled to an upper portion of one side;
A third process chamber extending in a horizontal direction with respect to the ground, positioned below the first process chamber, having an outlet at one side, and coupled to the bottom of one side of the second process chamber at the other side;
A first horizontal moving part installed in the first process chamber and horizontally moving a substrate in a first direction toward the second process chamber;
A second horizontal moving part installed in the second process chamber and horizontally moving the substrate;
A vertical moving part installed in the second process room and coupled to a second horizontal moving part and vertically moving the second horizontal moving part;
A third horizontal moving part installed in the third process chamber and horizontally moving the substrate discharged from the second process chamber in a second direction opposite to the first direction; And
And a processing module installed in at least one of the first to third process chambers to process the surface of the substrate. The method of claim 1,
And a preliminary humidifying unit positioned in the first process chamber and preliminarily humidifying the surface of the substrate. The method of claim 1,
And at least one of a rinse unit disposed in the third process chamber and a dry unit to dry the surface of the substrate. The method of claim 1,
And the processing module is located in the third process chamber. 5. The method according to any one of claims 1 to 4,
A tilting driver coupled to at least a portion of at least one of the first to third horizontal moving parts to tilt at least a portion of the at least one of the first to third horizontal moving parts to be inclined with respect to the ground; Substrate surface treatment system comprising a. 5. The method according to any one of claims 1 to 4,
The first horizontal moving part or the third horizontal moving part includes a plurality of first driving rolls and a plurality of second driving rolls, wherein the first driving rolls are adjacent to the inlet or the outlet compared to the second driving rolls. And the diameter of the first driving roll is larger than the diameter of the second driving roll. 5. The method according to any one of claims 1 to 4,
And the second horizontal moving part includes a plurality of driving rolls. 5. The method according to any one of claims 1 to 4,
The processing module includes a liquid jet module and an air jet module, which are integrally coupled, wherein the liquid jet module is configured to jet toward the surface of the substrate at least one kind of etchant capable of etching the silicon film on the surface of the substrate. And the air injection module is configured to inject liquid air toward the surface of the substrate. 9. The method of claim 8,
And the liquid ejecting module and the air ejecting module operate simultaneously. 5. The method according to any one of claims 1 to 4,
And the processing module comprises a liquid jet module having a plurality of spray nozzles. 5. The method according to any one of claims 1 to 4,
And at least one of the substrate and the processing module is adapted to linearly move along the longitudinal direction of the substrate. A first horizontal movement step of horizontally moving the substrate in the first direction;
A vertical lowering step of lowering the substrate in a vertical direction;
A second horizontal movement step of horizontally moving the substrate in a second direction opposite to the first direction; And
Performing a surface treatment on the surface of the substrate between any one of the first horizontal movement step, the vertical descending step and the second horizontal movement step. The method of claim 12,
The first horizontal movement step, the substrate surface treatment method comprising the step of preliminary humidification with respect to the surface of the substrate. The method of claim 12,
The second horizontal movement step may include at least one of cleaning and drying the surface of the substrate. The method of claim 12,
The performing of the surface treatment may include placing the substrate between the vertical lowering step and the second horizontal movement step. 16. The method according to any one of claims 12 to 15,
And at least one of the first horizontal moving step, the vertical falling step and the second horizontal moving step includes tilting the substrate to be inclined with respect to the ground. 17. The method of claim 16,
The tilting step is a step of tilting the substrate so that the surface of the substrate is inclined with respect to the direction perpendicular to the first direction or the second direction. 16. The method according to any one of claims 12 to 15,
The step of performing the surface treatment,
Providing at least one of at least one kind of etchant and liquid air capable of etching the silicon film on the surface of the substrate to the surface of the substrate. 19. The method of claim 18,
The performing of the surface treatment may include providing the etching solution and providing liquid air at the same time.

Images