KR20130028288A - Light emitting device package, light unit, and display device - Google Patents

Light emitting device package, light unit, and display device Download PDF

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Publication number
KR20130028288A
KR20130028288A KR1020110091730A KR20110091730A KR20130028288A KR 20130028288 A KR20130028288 A KR 20130028288A KR 1020110091730 A KR1020110091730 A KR 1020110091730A KR 20110091730 A KR20110091730 A KR 20110091730A KR 20130028288 A KR20130028288 A KR 20130028288A
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KR
South Korea
Prior art keywords
light emitting
emitting device
light
molding material
device package
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KR1020110091730A
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Korean (ko)
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KR101929873B1 (en
Inventor
엄동일
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020110091730A priority Critical patent/KR101929873B1/en
Publication of KR20130028288A publication Critical patent/KR20130028288A/en
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Publication of KR101929873B1 publication Critical patent/KR101929873B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)

Abstract

The light emitting device package according to the embodiment includes a body including a recess; First and second electrodes disposed in the recess; A light emitting element disposed on the first electrode; A first molding material disposed in the recess and covering a side surface of the light emitting device; A second molding material disposed on the first molding material and covering an upper surface of the light emitting device; It includes, The first molding material comprises a reflective material and a resin material.

Description

Light-Emitting Package, Light Unit and Display {LIGHT EMITTING DEVICE PACKAGE, LIGHT UNIT, AND DISPLAY DEVICE}

Embodiments relate to a light emitting device package, a light unit, and a display device.

A light emitting device is a device in which electrical energy is converted into light energy. The light emitting device includes a light emitting diode (LED) and a laser diode (LD). For example, the light emitting device can implement various colors by adjusting the composition ratio of the compound semiconductor.

The light emitting device may implement a light emitting source using compound semiconductor materials such as GaAs-based, AlGaAs-based, GaN-based, InGaN-based, and InGaAlP-based.

Such a light emitting device may be packaged and implemented as a light emitting device package emitting a variety of colors, and the light emitting device package is applied to various fields such as a lighting indicator for displaying a color, a character display, and an image display.

The embodiment provides a light emitting device package, a light unit, and a display device capable of improving light extraction efficiency.

The light emitting device package according to the embodiment includes a body including a recess; First and second electrodes disposed in the recess; A light emitting element disposed on the first electrode; A first molding material disposed in the recess and covering a side surface of the light emitting device; A second molding material disposed on the first molding material and covering an upper surface of the light emitting device; It includes, The first molding material comprises a reflective material and a resin material.

According to an embodiment, a light unit includes a substrate; A light emitting device package disposed on the substrate; An optical member through which the light provided from the light emitting device package passes; The light emitting device package includes: a body including a recess; First and second electrodes disposed in the recess; A light emitting element disposed on the first electrode; A first molding material disposed in the recess and covering a side surface of the light emitting device; A second molding material disposed on the first molding material and covering an upper surface of the light emitting device; It includes, The first molding material comprises a reflective material and a resin material.

According to an exemplary embodiment, a display device includes a light emitting module including a light emitting device package; A display panel configured to receive light from the light emitting module; The light emitting device package includes a body including a recess; First and second electrodes disposed in the recess; A light emitting element disposed on the first electrode; A first molding material disposed in the recess and covering a side surface of the light emitting device; A second molding material disposed on the first molding material and covering an upper surface of the light emitting device; It includes, The first molding material comprises a reflective material and a resin material.

The light emitting device package, the light unit, and the display device according to the embodiment have an advantage of improving light extraction efficiency.

1 is a view showing a light emitting device package according to an embodiment.
2 is a view illustrating a light emitting device provided in a light emitting device package according to an embodiment.
3 is a view showing another example of a light emitting device package according to the embodiment.
4 is a view showing another example of a light emitting device package according to the embodiment.
5 is a diagram illustrating a display device according to an exemplary embodiment.
6 is a diagram illustrating another example of a display device according to an exemplary embodiment.
7 is a view showing a lighting apparatus according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device package, a light unit, and a display device according to an embodiment will be described in detail with reference to the accompanying drawings.

1 is a view showing a light emitting device package according to an embodiment.

As illustrated in FIG. 1, the light emitting device package according to the embodiment may include a first electrode 211, a second electrode 213, a light emitting device 230, and a body 240.

The light emitting device package according to the embodiment may include a first electrode 211 and a second electrode 213. The light emitting device 230 may be disposed on an upper surface of the first electrode 211. The light emitting device 230 may be electrically connected to the second electrode 213 through a wire 270. For example, the light emitting device 230 may be implemented as a vertical light emitting device, or may be implemented as a horizontal light emitting device. The light emitting device 230 may be electrically connected to the first electrode 211 and the second electrode 213. The light emitting device 230 may be electrically connected to the first electrode 211 or the second electrode 213 by wire bonding, flip chip bonding, die bonding, or the like.

The body 240 may be provided on the first electrode 211 and the second electrode 213. The body 240 may provide a side surface having an inclined surface around the light emitting device 230. The body 240 may include a recess 220 formed by the side surface. The light emitting device 230 may be disposed in the recess 220 and disposed on the first electrode 211.

The body 240 may be implemented by any one of a silicon material, a ceramic material, and a resin material. The body 240 may include, for example, silicon, silicon carbide (SiC), aluminum nitride (AlN), polyphthalamide (PPA), and liquid crystal polymer (LCP). At least one of the materials may be implemented, but is not limited thereto.

In addition, the body 240 may be formed of a structure of a single layer or a multilayer substrate, or may be injection molded, but is not limited to the shape or structure of the body 240.

The first molding member 250 and the second molding member 260 may be provided in the recess 220 of the body 240. The first molding material 250 may be disposed in the recess 220 and may cover some side surfaces of the light emitting device 230. The second molding material 260 may be disposed on the first molding material 250 and may cover an upper surface of the light emitting device 230.

The wire 270 may electrically connect the light emitting device 230 and the second electrode 213, and a portion of the wire 270 may be exposed from the first molding material 250. An exposed portion of the wire 270 may be protected by the second molding material 260.

An upper surface of the first molding member 250 may be formed as a curved surface. The upper surface of the first molding member 250 may be formed in a convex shape or concave shape. For example, an upper surface of the first molding member 250 may be concave in a downward direction in which the light emitting device 230 is located. In addition, an upper surface of the first molding material 250 may be formed flat.

The first molding member 250 may include a reflective material and a resin material. For example, the first molding material 250 may include TiO 2 , silicon, epoxy, or the like. The first molding material 250 may perform a function of reflecting light emitted from the light emitting device 230 upwards. Usually, the light emitted from the light emitting device 230 is emitted in an area of 80% or more of the side height. For example, the first molding material 250 may be formed at 80% or less of the side height of the light emitting device 230. Therefore, according to the embodiment, since the light emitted from the light emitting device 230 can be reflected upward by the first molding material 250, the external light extraction effect can be improved. The light emitted from the light emitting device 230 by the first molding material 250 may be prevented from being absorbed in the lower region of the body 240.

The second molding material 260 may be disposed on the first molding material 250. The second molding material 260 may be provided on the light emitting device 230 to protect the light emitting device 230. The second molding material 260 may include a phosphor. The phosphor may receive light of the first wavelength band provided from the light emitting device 230 and emit light of the converted second wavelength band. The second molding material 260 may be made of a transparent resin material such as silicon or epoxy. In addition, the surface of the mold unit 60 may be provided flat, or may be provided in a concave or convex shape. At least one kind of phosphor may be added to the second molding material 260. For example, the phosphor may be YAG, TAG, Silicate, Nitride or Oxynitride phosphors.

After the light emitting device 230 and the second electrode 213 are connected through the wire 270, the first molding material 250 may be formed. In this case, a portion of the wire 270 may be exposed to the outside on the first molding material 250. Thereafter, the second molding material 260 is formed, and the second molding material 260 may protect both the light emitting device 230 and the wire 270.

Meanwhile, as an example, the light emitting device shown in FIG. 2 may be applied to the light emitting device package described with reference to FIG. 1. 2 is a view showing a light emitting device according to an embodiment.

As shown in FIG. 2, the light emitting device 100 according to the embodiment may include a light emitting structure 10, an electrode 20, and a reflective electrode 50.

The light emitting structure 10 may include a first conductive semiconductor layer 11, an active layer 12, and a second conductive semiconductor layer 13. Unevenness 17 may be provided on an upper surface of the first conductivity type semiconductor layer 11.

For example, the first conductivity type semiconductor layer 11 is formed of an n-type semiconductor layer doped with an n-type dopant as a first conductivity type dopant, and the second conductivity type semiconductor layer 13 is formed of an n- Type semiconductor layer to which a p-type dopant is added. In addition, the first conductive semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductive semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first conductive semiconductor layer 11 is a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be implemented. The first conductive semiconductor layer 11 may be selected from among GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, An n-type dopant such as Se or Te can be doped.

The active layer 12 is formed in such a manner that electrons (or holes) injected through the first conductive type semiconductor layer 11 and holes (or electrons) injected through the second conductive type semiconductor layer 13 meet with each other, And is a layer that emits light due to a band gap difference of an energy band according to a material of the active layer 12. [ The active layer 12 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 12 may be embodied as a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + have. When the active layer 12 is implemented as the multi quantum well structure, the active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer / GaN barrier layer. It can be implemented in the cycle of.

The second conductive semiconductor layer 13 may be formed of, for example, a p-type semiconductor layer. The second conductive type semiconductor layer 13 of a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be implemented. The second conductive semiconductor layer 13 may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, A p-type dopant such as Sr, Ba or the like may be doped.

Meanwhile, the first conductive semiconductor layer 11 may include a p-type semiconductor layer, and the second conductive semiconductor layer 13 may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed below the second conductive semiconductor layer 13. Accordingly, the light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the impurities in the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10 may be variously formed, but the present invention is not limited thereto.

Also, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductive semiconductor layer 11 and the active layer 12. In addition, a second conductive type AlGaN layer may be formed between the second conductive type semiconductor layer 13 and the active layer 12.

The unevenness 17 may be provided on an upper surface of the first conductivity type semiconductor layer 11. When the first conductivity type semiconductor layer 11 is a GaN layer, when the growth direction and the etching direction are considered, the surface on which the unevenness 17 is formed may be an N surface.

An ohmic contact layer 40 and the reflective electrode 50 may be disposed under the light emitting structure 10. The electrode 20 may be disposed on the light emitting structure 10. The electrode 20 and the reflective electrode 50 may provide power to the light emitting structure 10. The ohmic contact layer 40 may be formed to be in ohmic contact with the light emitting structure 10. In addition, the reflective electrode 50 may perform a function of increasing the amount of light extracted to the outside by reflecting light incident from the light emitting structure 10.

The ohmic contact layer 40 may be formed of, for example, a transparent conductive oxide layer. The ohmic contact layer 40 includes, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), and indium Aluminum Zinc Oxide), Indium Gallium Zinc Oxide It may be formed of at least one material.

The reflective electrode 50 may be formed of a metal material having a high reflectance. For example, the reflective electrode 50 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective electrode 50 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc (AZO). Transmissive conductive materials such as -Oxide, Indium-Gallium-Zinc-Oxide, IGTO, Indium-Gallium-Tin-Oxide, AZO, Aluminum-Zinc-Oxide, and ATO It can be formed in a multi-layer. For example, in the exemplary embodiment, the reflective electrode 50 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

A current blocking layer (CBL) 30 may be disposed between the light emitting structure 10 and the ohmic contact layer 40. The current blocking layer 30 may be formed in a region in which at least a portion of the current blocking layer overlaps with the electrode 20 in a vertical direction. By reducing the phenomenon of concentration can improve the luminous efficiency of the light emitting device according to the embodiment.

The current blocking layer 30 may have electrical insulation or may be formed using a material for forming a schottky contact with the light emitting structure 10. The current blocking layer 30 may be formed of an oxide, nitride, or metal. The current blocking layer 30 may include, for example, at least one of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO x , Ti, Al, Cr. .

The current blocking layer 30 may be disposed in a first area under the light emitting structure 10, and the ohmic contact layer 40 may include a second area under the light emitting structure 10 and the current blocking layer ( 30) can be placed below. The ohmic contact layer 40 may be disposed between the light emitting structure 10 and the reflective electrode 50. In addition, the ohmic contact layer 40 may be disposed between the current blocking layer 30 and the reflective electrode 50.

An isolation layer 80 may be further disposed between the light emitting structure 10 and the ohmic contact layer 40. The isolation layer 80 may be disposed on the lower circumference of the light emitting structure 10 and on the ohmic contact layer 40. The isolation layer 80 may be formed of, for example, a material having electrical insulation or a material having low electrical conductivity compared to the light emitting structure 10. The isolation layer 80 may be formed of, for example, oxide or nitride. For example, the isolation layer 80 is made of Si0 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , TiO 2 , ITO, AZO, ZnO, and the like. At least one selected from the group may be formed. The isolation layer 80 may be formed of the same material as the current blocking layer 30 or may be formed of different materials. The isolation layer 80 may also be referred to as a channel layer.

A diffusion barrier layer 55, a bonding layer 60, and a support member 70 may be disposed below the reflective electrode 50.

The diffusion barrier layer 55 may function to prevent the material included in the bonding layer 60 from diffusing toward the reflective electrode 50 in the process of providing the bonding layer 60. The diffusion barrier layer 55 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the reflective electrode 50. The diffusion barrier layer 55 may include at least one of Cu, Ni, Ti-W, W, and Pt materials.

The bonding layer 60 may include a barrier metal or a bonding metal, and may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. . The support member 70 supports the light emitting device according to the embodiment, and may be electrically connected to an external electrode to provide power to the light emitting structure 10. The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). Further, the support member 70 may be formed of an insulating material.

The passivation layer 90 may be further disposed on the light emitting structure 10. The protective layer 90 may be formed of oxide or nitride. The protective layer 90 may be, for example, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 It may be formed of a material having a light transmitting and insulating properties. The protective layer 90 may be provided on the side surface of the light emitting structure 10. In addition, the protective layer 90 may be provided not only on the side surface of the light emitting structure 10 but also on the upper side.

In the above description, the electrode 20 is disposed above the light emitting structure 10 and the reflective electrode 50 is disposed below the light emitting structure 10. However, the light emitting device according to the present embodiment includes a first electrode electrically connected to the first conductive semiconductor layer 11 forming the light emitting structure 10 and a second conductive semiconductor layer forming the light emitting structure 10 ( The position and shape of the second electrode electrically connected to 13 may be variously modified. In addition, the light emitting device according to the present embodiment may be applied to a light emitting device having a horizontal structure in which the first electrode and the second electrode are exposed in the same direction.

3 is a view showing another example of a light emitting device package according to the embodiment. In the description of the light emitting device package according to the exemplary embodiment with reference to FIG. 3, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

The light emitting device package according to the embodiment may further include a lens 290 on the body 240, as shown in FIG. 3. The directivity angle of the light emitted from the light emitting device package can be adjusted by the lens 290. The fixing protrusion 280 may be further included on the body 240. The fixing protrusion 280 may be disposed around the lens 290 to stably guide the position of the lens 290.

4 is a view showing another example of a light emitting device package according to the embodiment. In the description of the light emitting device package according to the exemplary embodiment with reference to FIG. 4, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

The light emitting device package according to the embodiment may include a light emitting device 230, a body 240, a reflecting unit 245, a first molding material 250, and a second molding material 260.

An upper surface of the first molding member 250 may be formed as a curved surface. The upper surface of the first molding member 250 may be formed in a convex shape or concave shape. For example, an upper surface of the first molding member 250 may be concave in a downward direction in which the light emitting device 230 is located. In addition, an upper surface of the first molding material 250 may be formed flat.

The first molding member 250 may include a reflective material and a resin material. For example, the first molding material 250 may include TiO 2 , silicon, epoxy, or the like. The first molding material 250 may perform a function of reflecting light emitted from the light emitting device 230 upwards. Usually, the light emitted from the light emitting device 230 is emitted in an area of 80% or more of the side height. For example, the first molding material 250 may be formed at 80% or less of the side height of the light emitting device 230. Therefore, according to the embodiment, since the light emitted from the light emitting device 230 can be reflected upward by the first molding material 250, the external light extraction effect can be improved. The light emitted from the light emitting device 230 by the first molding material 250 may be prevented from being absorbed in the lower region of the body 240.

The second molding material 260 may be disposed on the first molding material 250. The second molding material 260 may be provided on the light emitting device 230 to protect the light emitting device 230. The second molding material 260 may include a phosphor. The phosphor may receive light of the first wavelength band provided from the light emitting device 230 and emit light of the converted second wavelength band. The second molding material 260 may be made of a transparent resin material such as silicon or epoxy. In addition, the surface of the mold unit 60 may be provided flat, or may be provided in a concave or convex shape. At least one kind of phosphor may be added to the second molding material 260. For example, the phosphor may be YAG, TAG, Silicate, Nitride or Oxynitride phosphors.

According to an embodiment, the reflective part 245 may be disposed between the second molding material 260 and the body 240. The reflector 245 may be disposed on the first molding material 250. In addition, a portion of the reflective part 245 may be disposed in the first molding material 25. For example, the reflective part 245 may be formed by coating a reflective material.

The light emitting device package according to the embodiment may be applied to the light unit. The light unit may include a structure in which a plurality of light emitting elements are arranged, and may include the display device illustrated in FIGS. 5 and 6 and the illumination device illustrated in FIG. 7.

Referring to FIG. 5, the display apparatus 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 1031 may be provided, and light may be provided directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device package 200 according to the embodiment described above. The light emitting device package 200 may be arranged on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 200 is provided on the side surface of the bottom cover 1011 or on the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting device packages 200 may be mounted such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

6 is a diagram illustrating another example of a display device according to an exemplary embodiment.

Referring to FIG. 6, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the light emitting device package 200 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

7 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 7, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 200 according to an embodiment provided on the substrate 1532. The plurality of light emitting device packages 200 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 200 may be disposed on the substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiments, which are merely exemplary and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated above in the range without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

211: first electrode 213: second electrode
220: recess 230: light emitting element
240: body 245: reflecting unit
250: first molding material 260: second molding material
270: wire 280: fixing projection
290: lens

Claims (10)

A body comprising a recess;
First and second electrodes disposed in the recess;
A light emitting element disposed on the first electrode;
A first molding material disposed in the recess and covering a side surface of the light emitting device; And
A second molding material disposed on the first molding material and covering an upper surface of the light emitting device;
And a first molding material including a reflective material and a resin material. The light emitting device package of claim 1, wherein the light emitting device is electrically connected to the second electrode, and a portion of the light emitting device package comprises a wire exposed from the first molding material. The light emitting device package of claim 1, wherein an upper surface of the first molding material is curved. The light emitting device package of claim 3, wherein an upper surface of the first molding material is concave in a downward direction in which the light emitting device is positioned. The light emitting device package of claim 1, wherein the reflective material comprises TiO 2 . The light emitting device package of claim 1, wherein the first molding material is formed at 80% or less of a height of the side surface of the light emitting device. The light emitting device package of claim 1, wherein the second molding material comprises a phosphor. The light emitting device package of claim 1, further comprising a reflector between the second molding material and the body. Board;
A light emitting device package disposed on the substrate and according to any one of claims 1 to 8;
An optical member through which the light provided from the light emitting device package passes;
Light unit comprising a. A light emitting module comprising a light emitting device package according to any one of claims 1 to 8;
A display panel configured to receive light from the light emitting module;
Display device comprising a.
KR1020110091730A 2011-09-09 2011-09-09 Light emitting device package, light unit, and display device KR101929873B1 (en)

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Cited By (3)

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WO2014185693A1 (en) * 2013-05-13 2014-11-20 서울반도체 주식회사 Light-emitting device package, manufacturing method thereof, and vehicle lamp and backlight unit including same
KR101501553B1 (en) * 2014-05-26 2015-03-12 주식회사 아모센스 Light emitting device package
US9691954B2 (en) 2015-07-30 2017-06-27 Samsung Electronics Co., Ltd. Light-emitting diode (LED) package

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US20240170623A1 (en) * 2022-08-11 2024-05-23 Seoul Semiconductor Co., Ltd. Light emitting apparatus and display apparatus having the same

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JP2002043625A (en) * 2000-07-19 2002-02-08 Koha Co Ltd Led
JP5102051B2 (en) * 2007-01-18 2012-12-19 シチズン電子株式会社 Semiconductor light emitting device

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WO2014185693A1 (en) * 2013-05-13 2014-11-20 서울반도체 주식회사 Light-emitting device package, manufacturing method thereof, and vehicle lamp and backlight unit including same
US10236421B2 (en) 2013-05-13 2019-03-19 Seoul Semiconductor Co., Ltd. Light-emitting device package, manufacturing method thereof, and vehicle lamp and backlight unit including same
US10784415B2 (en) 2013-05-13 2020-09-22 Seoul Semiconductor Co., Ltd. Light-emitting device package, manufacturing method thereof, and vehicle lamp and backlight unit including same
KR101501553B1 (en) * 2014-05-26 2015-03-12 주식회사 아모센스 Light emitting device package
US9691954B2 (en) 2015-07-30 2017-06-27 Samsung Electronics Co., Ltd. Light-emitting diode (LED) package

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