KR20130016947A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20130016947A
KR20130016947A KR1020110079158A KR20110079158A KR20130016947A KR 20130016947 A KR20130016947 A KR 20130016947A KR 1020110079158 A KR1020110079158 A KR 1020110079158A KR 20110079158 A KR20110079158 A KR 20110079158A KR 20130016947 A KR20130016947 A KR 20130016947A
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KR
South Korea
Prior art keywords
layer
light emitting
emitting device
semiconductor layer
carbon nano
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KR1020110079158A
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Korean (ko)
Inventor
정재웅
주현승
노지희
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엘지이노텍 주식회사
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Priority to KR1020110079158A priority Critical patent/KR20130016947A/en
Publication of KR20130016947A publication Critical patent/KR20130016947A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: A light emitting device is provided to improve heat emission efficiency by introducing a carbon nano layer in a light transmission electrode layer and introducing a zinc oxide nano rod between a light emitting structure and the carbon nano layer. CONSTITUTION: A first conductivity type semiconductor layer(112) is prepared. An active layer(114) is formed on the first conductivity type semiconductor layer. A second conductive semiconductor layer(116) is formed on the active layer. Zinc oxide(ZnO) nano rods(120) are formed on the second conductive semiconductor layer. A carbon nano layer(130) is formed on the zinc oxide nano rods.

Description

[0001] LIGHT EMITTING DEVICE [0002]

Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and an illumination system.

A light emitting device is a device in which electrical energy is converted into light energy, and for example, various colors can be realized by adjusting a composition ratio of a compound semiconductor.

According to the prior art, a transparent ohmic layer is formed on a light emitting structure consisting of an N-type GaN layer, an active layer and a P-type GaN layer.

The transparent ohmic layer used in the light emitting device according to the prior art is mainly used ITO-based oxide, etc., these metal oxides are transparent and at the same time relatively excellent in electrical conductivity is used as the electrode contact layer of the light emitting device.

Recently, many researches have been conducted to make high brightness LEDs in nitride semiconductor light emitting devices. However, conventionally used ITO electrode has a high manufacturing cost due to the price rise and depletion of indium (In), a main material, and there is a problem in applying to the bent device because it is inflexible.

In addition, the requirements of the transparent ohmic layer used in the light emitting device are excellent light transparency and high in-plane electrical conductivity.

In order to increase the transparency, the thickness of the transparent ohmic layer needs to be reduced because the thickness of the transparent ohmic layer absorbs a part of the emitted light, thereby lowering the brightness of the light emitting device.

However, if the thickness of the transparent ohmic layer is reduced, the electrical resistance in the surface direction increases, resulting in a decrease in the electrical conductivity.

According to the prior art, there is a state in which there is no optimal transparent ohmic layer that is thin and at the same time can increase the surface electrical conductivity.

The nitride semiconductor light emitting device according to the prior art has problems of current injection nonuniformity, low heat emission efficiency, and low light extraction efficiency depending on the absence of an optimal transparent ohmic layer.

In addition, according to the prior art it is necessary to improve the luminous efficiency and reliability of the light emitting device to implement a high output light emitting device.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of improving brightness through improvement of a transparent ohmic layer.

In addition, the embodiment is to improve the luminous efficiency and reliability to provide a high-performance light emitting device, a method of manufacturing a light emitting device, a light emitting device package and an illumination system.

The light emitting device according to the embodiment includes a first conductivity type semiconductor layer; An active layer on the first conductivity type semiconductor layer; A second conductivity type semiconductor layer on the active layer; A plurality of zinc oxide (ZnO) nano rods on the second conductive semiconductor layer; And a carbon nano layer on the zinc oxide nano rod.

According to the embodiment, it is possible to provide a light emitting device, a manufacturing method of the light emitting device, a light emitting device package, and an illumination system capable of improving the brightness by improving the transparent ohmic layer.

In addition, according to the embodiment, it is possible to provide a high-performance light emitting device, a manufacturing method of the light emitting device, a light emitting device package, and an illumination system by improving light emission efficiency and reliability.

For example, according to the embodiment, a carbon nano layer having excellent thermal conductivity and electrical conductivity and excellent transparency is employed as a transmissive electrode layer of a nitride semiconductor light emitting device, and a zinc oxide nano rod is employed between the light emitting structure and the carbon nano layer. It improves the uniformity of injection, drastically improves the heat dissipation efficiency, and maximizes the light extraction efficiency to dramatically improve the luminous efficiency and reliability of light emitting devices. A system can be provided.

1 is a cross-sectional view of a light emitting device according to an embodiment.
2 to 7 are cross-sectional views of a method of manufacturing a light emitting device according to an embodiment.
8 is a cross-sectional view of a light emitting device package according to the embodiment.
9 is a perspective view of a lighting unit according to an embodiment.
10 is a perspective view of a backlight unit according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to an embodiment. 1 illustrates a horizontal light emitting device, but the embodiment is not limited thereto.

The light emitting device 100 according to the embodiment includes a first conductive semiconductor layer 112, an active layer 114 on the first conductive semiconductor layer 112, and a second conductive type on the active layer 114. The semiconductor layer 116, the plurality of zinc oxide (ZnO) nano rods 120 on the second conductivity-type semiconductor layer 116, and the carbon nano layer on the zinc oxide nano rods 120 ( 130). The second electrode 140 may be formed on the carbon nano layer 130.

In an embodiment, the first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116 may constitute a light emitting structure 110, and the light emitting structure 110 may be a predetermined substrate. It may be formed on the 105, the first electrode 150 may be formed on the exposed first conductive semiconductor layer 112.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of improving brightness through improvement of a transparent ohmic layer.

To this end, the embodiment may employ a carbon nano layer 130 as a transparent ohmic layer, the carbon nano layer 130 may include a graphene layer (Graphene layer), but is not limited thereto.

Graphene (Graphene) is used as the carbon nano layer 130 in the embodiment is a carbon thin film of a single atomic thickness and has a high transparency, a material with high thermal conductivity and electrical conductivity.

For example, the graphene (Graphene) employed in the embodiment is high enough to absorb only about 2.3% of the light, the thermal conductivity is about 5300 W / mK, the electrical conductivity is about 15000 ~ 200000 cm 2 / Vs But it is not limited thereto.

For example, the graphene carbon nano layer 130 employed in the embodiment has a two-dimensional characteristic even at room temperature and has a higher thermal conductivity than silver (Ag), and in the graphene carbon nano layer 130, the electrons are as if the mass is By moving as if it is 0, the flow of electricity can be at least 1 million times faster than the conventional semiconductor, the current density is about 1 million times higher than that of copper, and the quantum hole effect observed only at cryogenic temperatures. Phenomena possessed) are also visible at room temperature.

In addition, the graphene (Graphene) employed as the carbon nano layer 130 in the embodiment is very high in strength, excellent elasticity may not lose the electrical properties even if bent or stretched.

The carbon nanolayer 130 in the embodiment may be formed of a single atomic layer graphene layer or a multi-atomic layer graphene layer.

In addition, the carbon nano layer 130 may be formed in a single layer form, a porous form or a stripe net form having a predetermined pattern, but is not limited thereto.

The carbon nanolayer 130 may have a thickness of about 0.1 nm to about 100 nm to improve electrical conductivity and thermal conductivity. This is because when the thickness of the carbon nanolayer 130 is greater than 100 nm, light absorption of the carbon nanolayer 130 may be increased, thereby lowering the characteristics of the light emitting device 100.

In addition, the carbon nano layer 130 may be formed to have a thickness of about 0.2 nm to 0.325 nm to facilitate formation and to have high battery conductivity and light transmittance.

On the other hand, according to the prior art, the graphene thin film layer and the semiconductor surface layer has a problem in that the graphene thin film layer is easily separated because the adhesion is very low due to different crystal structures.

In addition, according to the related art, there is a problem of causing high contact resistance in the graphene thin film layer and the semiconductor interface.

In the light emitting device according to the embodiment, the graphene carbon nano layer 130 and the second conductive layer are interposed between the graphene carbon nano layer 130 and the second conductive semiconductor layer 116 through the zinc oxide nano rod 120. The zinc oxide nano rod 120 may be spaced apart from the semiconductor layer 116 and may be in contact with the second conductive semiconductor layer 116.

Accordingly, the problem of adhesion and contact resistance of the graphene layer with the semiconductor layer can be overcome.

In the embodiment, the zinc oxide nano rod 120 may include a carbon material to reduce resistance and increase electrical conductivity. For example, a carbon material of the carbon nano layer 130 may be diffused into the zinc oxide nano rod 120, but is not limited thereto.

According to the embodiment, the scattering effect and the transmittance of light may be improved through the zinc oxide nanorod 120 between the graphene carbon nano layer 130 and the second conductive semiconductor layer 116. By solving the problem of the bonding force and resistance of the fin carbon nano layer, it is possible to improve the light efficiency by using the graphene material having excellent electrical conductivity and mechanical properties as the electrode material.

In addition, the zinc oxide nano rod 120 may function as a photonic crystal structure to increase the light extraction function.

Carbon nano layer 130 according to the embodiment is excellent in heat dissipation characteristics because of the excellent thermal conductivity in the plane direction compared to the conventional transparent ohmic layer, and also excellent in the electrical conductivity in the plane direction surface current injected from the second electrode 140 It is effectively uniformly dispersed in the direction, the current injection efficiency according to the uniform current injection is increased to increase the luminous efficiency.

In addition, according to the embodiment, it is possible to implement a thin translucent electrode layer having excellent surface electrical conductivity and excellent light transmittance. Therefore, it is possible to effectively improve the luminous efficiency and reliability of the device according to the increase in current injection efficiency, heat emission efficiency, light extraction efficiency.

According to the embodiment, uniformity of current injection is achieved by employing a carbon nano layer having excellent thermal conductivity and electrical conductivity and excellent transparency to the light transmitting electrode layer of the nitride semiconductor light emitting device, and employing zinc oxide nano rod between the light emitting structure and the carbon nano layer. To improve the light emitting efficiency and reliability by maximizing the light extraction efficiency and maximizing the light extraction efficiency to provide high power light emitting device, manufacturing method of light emitting device, light emitting device package and lighting system. Can be.

Accordingly, the embodiment can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of improving brightness through improvement of the transparent ohmic layer.

In addition, the embodiment is to improve the luminous efficiency and reliability to provide a high-performance light emitting device, a method of manufacturing a light emitting device, a light emitting device package and an illumination system.

To this end, an embodiment includes a current spreading layer (not shown), a strain control layer (not shown), and the like between the first conductivity-type semiconductor layer 112 and the active layer 114, and the active layer 114 and the first layer. An electron blocking layer (not shown) may be provided between the two conductive semiconductor layers 116 to implement a high output light emitting device.

Accordingly, according to the embodiment, it is possible to provide a high performance nitride semiconductor light emitting device by dramatically improving the light emitting efficiency and reliability of the light emitting device.

Hereinafter, the features of the embodiment will be described in more detail with reference to FIGS. 2 to 7 while describing a light emitting device manufacturing method according to the embodiment.

First, the substrate 105 is prepared as shown in FIG. 2. The substrate 105 may include a conductive substrate or an insulating substrate. For example, the substrate 105 may include sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga 2 0. 3 May be used.

An uneven structure may be formed on the substrate 105, but is not limited thereto. Impurities on the surface may be removed by wet cleaning the substrate 105.

Thereafter, the light emitting structure 110 including the first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116 may be formed on the substrate 105.

A buffer layer (not shown) may be formed on the substrate 105. The buffer layer may mitigate lattice mismatch between the material of the light emitting structure 110 and the substrate 105, and the material of the buffer layer may be a Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN. , AlInN may be formed of at least one.

The first conductivity type semiconductor layer 112 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant, and when the first conductivity type semiconductor layer 112 is an N-type semiconductor layer, The first conductive dopant may be an N-type dopant and may include Si, Ge, Sn, Se, or Te, but is not limited thereto.

The first conductive semiconductor layer 112 may include a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + . For example, the first conductive semiconductor layer 112 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, .

The first conductive semiconductor layer 112 may form an N-type GaN layer using a chemical vapor deposition method (CVD), molecular beam epitaxy (MBE), or sputtering or hydroxide vapor phase epitaxy (HVPE). . In addition, the first conductive semiconductor layer 112 may include a silane containing n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and silicon (Si). The gas SiH 4 may be injected and formed.

In an embodiment, a current spreading layer (not shown) may be formed on the first conductivity type semiconductor layer 112. The current diffusion layer may be an undoped GaN layer, but is not limited thereto.

Next, an embodiment may form an electron injection layer (not shown) on the current spreading layer. The electron injection layer may be a first conductivity type gallium nitride layer. For example, the electron injection layer may be the electron injection efficiently by being doped at a concentration of the n-type doping element 6.0x10 18 atoms / cm 3 ~ 8.0x10 18 atoms / cm 3.

In addition, the embodiment may form a strain control layer (not shown) on the electron injection layer. For example, a strain control layer formed of In y Al x Ga (1-xy) N (0? X? 1, 0? Y? 1) / GaN or the like can be formed on the electron injection layer. The strain control layer may effectively relieve stress caused by lattice mismatch between the first conductivity type semiconductor layer 112 and the active layer 114.

Further, as the strain control layer is repeatedly laminated in at least six cycles having compositions such as first In x1 GaN and second In x2 GaN, more electrons are collected at a low energy level of the active layer 114, The probability of recombination of holes is increased and the luminous efficiency can be improved.

Thereafter, an active layer 114 is formed on the strain control layer.

The active layer 114 has an energy band inherent in the active layer (light emitting layer) material because electrons injected through the first conductive semiconductor layer 112 and holes injected through the second conductive semiconductor layer 116 formed thereafter meet each other. It is a layer that emits light with energy determined by.

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. For example, the active layer 114 may be formed with a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 114 is formed of one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. But it is not limited thereto. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

In the embodiment, an electron blocking layer (not shown) is formed on the active layer 114 to serve as electron blocking and cladding of the active layer, thereby improving the luminous efficiency. For example, the electron blocking layer may be formed of an Al x In y Ga (1-xy) N (0? X ? 1, 0? Y ? 1 ) semiconductor, And may be formed to a thickness of about 100 A to about 600 A, but the present invention is not limited thereto.

The electron blocking layer may be formed of a superlattice of Al z Ga (1-z) N / GaN (0? Z ? 1), but is not limited thereto.

The electron blocking layer can efficiently block the electrons that are ion-implanted into the p-type and overflow, and increase the hole injection efficiency. For example, the electron blocking layer can effectively prevent electrons that are overflowed by ion implantation of Mg in a concentration range of about 10 18 to 10 20 / cm 3 , and increase the hole injection efficiency.

The second conductive type semiconductor layer 116 is a second conductive type dopant is doped -5-group three-V compound semiconductor, for example, In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y And a semiconductor material having a composition formula of ≦ 1, 0 ≦ x + y ≦ 1). When the second conductive semiconductor layer 116 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, Ba, or the like as a P-type dopant.

The second conductivity type semiconductor layer 116 is a bicetyl cyclone containing p-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and magnesium (Mg) in the chamber. Pentadienyl magnesium (EtCp 2 Mg) {Mg (C 2 H 5 C 5 H 4 ) 2 } may be injected to form a p-type GaN layer, but is not limited thereto.

In an exemplary embodiment, the first conductive semiconductor layer 112 may be an N-type semiconductor layer, and the second conductive semiconductor layer 116 may be a P-type semiconductor layer, but is not limited thereto. In addition, a semiconductor, for example, an N-type semiconductor layer (not shown) having a polarity opposite to that of the second conductive type may be formed on the second conductive type semiconductor layer 116. Accordingly, the light emitting structure 110 may be implemented as any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

Next, as shown in FIG. 3, an etching process for exposing a portion of the first conductivity-type semiconductor layer 112 may be performed. For example, a portion of the first conductive semiconductor layer 112 may be exposed by removing some of the second conductive semiconductor layer 116, the electron blocking layer, the active layer 114, the strain control layer, and the current diffusion layer. have. The etching process may be performed by wet etching, but is not limited thereto.

Next, as illustrated in FIG. 4, a plurality of zinc oxide (ZnO) nano rods 120 may be formed on the remaining second conductive semiconductor layer 116.

 According to the prior art, the graphene thin film layer and the semiconductor surface layer have a problem in that the graphene thin film layer is easily detached because the crystal structure is very different from each other, and thus the graphene thin film layer and the semiconductor interface have high contact resistance. .

In the light emitting device according to the embodiment, the graphene carbon nano layer 130 and the second conductive layer are interposed between the graphene carbon nano layer 130 and the second conductive semiconductor layer 116 through the zinc oxide nano rod 120. The zinc oxide nano rod 120 may be spaced apart from the semiconductor layer 116 and may be in contact with the second conductive semiconductor layer 116.

Accordingly, the problem of adhesion and contact resistance of the graphene layer with the semiconductor layer can be overcome.

For example, the zinc oxide nano rod 120 may be grown on the light emitting structure 110 by hydrothermal synthesis, but is not limited thereto. For example, a ZnO seed layer coated by a coating method is formed.

Then, the zinc nitrate hexahydrate (Zinc nitrate hexahydrate) and hexamethylenetetramine are dissolved in deionized water (DI) by the (Hexamethylenetetramin) column Zn 2 + and OH, respectively - was ionized as bonded to each other wherein the ZnO seed layer (seed layer The zinc oxide nano rod 120 may be grown in a random direction on (), but is not limited thereto.

In the embodiment, the zinc oxide nano rod 120 growth method may grow at a low temperature of about 90 ° C. in a hydrothermal manner and control the density and length of the nanorods according to the growth time and concentration.

According to the embodiment, the zinc oxide nano rod 120 may be grown at a low temperature to minimize damage to the light emitting structure, thereby reducing the operating voltage of the light emitting device.

In addition, the zinc oxide nano rod 120 may function as a photonic crystal structure to increase the light extraction function.

Next, as shown in FIG. 5, the carbon nano layer 130 and the second electrode 140 may be formed on the zinc oxide nano rod 120. For example, after the carbon nano layer 130 and the second electrode 140 are disposed on the zinc oxide nano rod 120, rapid thermal treatment may be performed at a temperature of about 340 ° C. to about 350 ° C. for about 15 to 25 minutes. The carbon nano layer 130 may be formed on the zinc oxide nano rod 120 through RTA, but is not limited thereto.

In the embodiment, the zinc oxide nano rod 120 may include a carbon material to reduce resistance and increase electrical conductivity. For example, the carbon material of the carbon nano layer 130 may be diffused into the zinc oxide nano rod 120 through the rapid heat treatment process, but is not limited thereto.

6A to 6C are cross-sectional views illustrating a preparation process of the graphene carbon nano layer 130 and the second electrode 140, but are not limited thereto.

First, as shown in FIG. 6A, a silicon oxide 192 is formed on a silicon substrate, and then a predetermined metal layer 194 is formed. The metal layer 194 may be a Ni metal layer, but is not limited thereto.

Thereafter, the graphene carbon nano layer 130 is grown on the metal layer 194. The graphene carbon nano layer 130 may be grown by injecting methane gas and Ar gas by a CVD method, but is not limited thereto.

Graphene (Graphene) is used as the carbon nano layer 130 in the embodiment is a carbon thin film of a single atomic thickness and has a high transparency, a material with high thermal conductivity and electrical conductivity. For example, the graphene (Graphene) employed in the embodiment is high enough to absorb only about 2.3% of the light, the thermal conductivity is about 5300 W / mK, the electrical conductivity is about 15000 ~ 200000 cm 2 / Vs But it is not limited thereto.

In addition, the graphene (Graphene) employed as the carbon nano layer 130 in the embodiment is very high in strength, excellent elasticity may not lose the electrical properties even if bent or stretched.

The carbon nanolayer 130 in the embodiment may be formed of a single atomic layer graphene layer or a multi-atomic layer graphene layer.

In addition, the carbon nano layer 130 may be formed in a single layer form, a porous form or a stripe net form having a predetermined pattern, but is not limited thereto.

The carbon nanolayer 130 may have a thickness of about 0.1 nm to about 100 nm to improve electrical conductivity and thermal conductivity. This is because when the thickness of the carbon nanolayer 130 is greater than 100 nm, light absorption of the carbon nanolayer 130 may be increased, thereby lowering the characteristics of the light emitting device 100.

In addition, the carbon nano layer 130 may be formed to have a thickness of about 0.2 nm to 0.325 nm to facilitate formation and to have high battery conductivity and light transmittance.

Next, as shown in FIG. 6B, a second electrode 140 is formed on the graphene carbon nano layer 130. The second electrode 140 may include any one or more of Cr, Al, Ni, Au, but is not limited thereto.

Next, the graphene carbon nano layer 130 is separated from the metal layer 194 as shown in FIG. 6C. For example, the graphene carbon nano layer 130 may be separated using Ni etchant, but is not limited thereto.

Next, as shown in FIG. 7, a first electrode 150 is formed on the exposed first conductive semiconductor layer 112.

According to the embodiment, uniformity of current injection is achieved by employing a carbon nano layer having excellent thermal conductivity and electrical conductivity and excellent transparency in the transmissive electrode layer of the nitride semiconductor light emitting device, and employing zinc oxide nano rod between the light emitting structure and the carbon nano layer. To improve the light emitting efficiency and reliability by maximizing the light extraction efficiency and maximizing the light extraction efficiency to provide high power light emitting device, manufacturing method of light emitting device, light emitting device package and lighting system. Can be.

Accordingly, according to the embodiment, it is possible to provide a high-performance light emitting device, a manufacturing method of the light emitting device, a light emitting device package, and an illumination system by improving luminous efficiency and reliability.

In addition, the embodiment is to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and an illumination system that can improve the brightness through the improvement of the transparent ohmic layer.

8 is a view illustrating a light emitting device package 200 in which a light emitting device is installed, according to embodiments.

The light emitting device package 200 according to the embodiment may include a package body 205, a third electrode layer 213 and a fourth electrode layer 214 installed on the package body 205, and the package body 205. The light emitting device 100 is installed at and electrically connected to the third electrode layer 213 and the fourth electrode layer 214, and a molding member 230 surrounding the light emitting device 100 is included.

The package body 205 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may be applied to the horizontal type light emitting device 100 illustrated in FIG. 1, but is not limited thereto. The light emitting device 100 may also be applied to a vertical light emitting device (not shown).

The light emitting device 100 may be installed on the package body 205 or on the third electrode layer 213 or the fourth electrode layer 214.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method. In the exemplary embodiment, the light emitting device 100 is electrically connected to the third electrode layer 213 and the fourth electrode layer 214 through a wire, but is not limited thereto.

The molding member 230 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 230 may include a phosphor 232 to change the wavelength of the light emitted from the light emitting device 100.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like, which is an optical member, may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or function as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, a pointing device, a lamp, and a streetlight.

11 is a perspective view 1100 of a lighting unit according to an embodiment. However, the lighting unit 1100 of FIG. 11 is an example of a lighting system, but is not limited thereto.

In the embodiment, the lighting unit 1100 is connected to the case body 1110, the light emitting module unit 1130 installed on the case body 1110, and the case body 1110 and receive power from an external power source. It may include a terminal 1120.

The case body 1110 may be formed of a material having good heat dissipation characteristics. For example, the case body 1110 may be formed of a metal material or a resin material.

The light emitting module unit 1130 may include a substrate 1132 and at least one light emitting device package 200 mounted on the substrate 1132.

The substrate 1132 may be a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 1132 may be formed of a material that reflects light efficiently, or the surface may be formed of a color that reflects light efficiently, for example, white, silver, or the like.

The at least one light emitting device package 200 may be mounted on the substrate 1132. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) 100. The light emitting diodes 100 may include colored light emitting diodes emitting red, green, blue, or white colored light, and UV light emitting diodes emitting ultraviolet (UV) light.

The light emitting module unit 1130 may be disposed to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1120 may be electrically connected to the light emitting module unit 1130 to supply power. In an embodiment, the connection terminal 1120 is coupled to the external power source by a socket, but is not limited thereto. For example, the connection terminal 1120 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

12 is an exploded perspective view 1200 of a backlight unit according to an embodiment. However, the backlight unit 1200 of FIG. 12 is an example of an illumination system, but is not limited thereto.

The backlight unit 1200 according to the embodiment includes a light guide plate 1210, a light emitting module unit 1240 that provides light to the light guide plate 1210, a reflective member 1220 under the light guide plate 1210, and the light guide plate. 1210, a bottom cover 1230 for accommodating the light emitting module unit 1240 and the reflective member 1220, but is not limited thereto.

The light guide plate 1210 serves to surface light by diffusing light. The light guide plate 1210 is made of a transparent material, for example, an acrylic resin series such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module unit 1240 provides light to at least one side of the light guide plate 1210 and ultimately serves as a light source of a display device in which the backlight unit is installed.

The light emitting module unit 1240 may be in contact with the light guide plate 1210, but is not limited thereto. Specifically, the light emitting module 1240 includes a substrate 1242 and a plurality of light emitting device packages 200 mounted on the substrate 1242. The substrate 1242 is mounted on the light guide plate 1210, But is not limited to.

The substrate 1242 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1242 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like.

The plurality of light emitting device packages 200 may be mounted on the substrate 1242 such that a light emitting surface on which light is emitted is spaced apart from the light guide plate 1210 by a predetermined distance.

The reflective member 1220 may be formed under the light guide plate 1210. The reflection member 1220 reflects the light incident on the lower surface of the light guide plate 1210 so as to face upward, thereby improving the brightness of the backlight unit. The reflective member 1220 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

The bottom cover 1230 may accommodate the light guide plate 1210, the light emitting module unit 1240, the reflective member 1220, and the like. For this purpose, the bottom cover 1230 may be formed in a box shape having an opened upper surface, but the present invention is not limited thereto.

The bottom cover 1230 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.

According to the embodiment, it is possible to provide a light emitting device, a manufacturing method of the light emitting device, a light emitting device package, and an illumination system capable of improving the brightness by improving the transparent ohmic layer.

In addition, according to the embodiment, it is possible to provide a high-performance light emitting device, a manufacturing method of the light emitting device, a light emitting device package, and an illumination system by improving light emission efficiency and reliability.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible.

For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (7)

A first conductive semiconductor layer;
An active layer on the first conductivity type semiconductor layer;
A second conductive semiconductor layer on the active layer;
A plurality of zinc oxide (ZnO) nano rods on the second conductive semiconductor layer; And
And a carbon nano layer on the zinc oxide nano rod. The method according to claim 1,
The zinc oxide nano rod light emitting device comprising a carbon material. The method of claim 2,
A light emitting device in which a carbon material of the carbon nano layer is diffused into the zinc oxide nano rod. The method according to claim 1,
The carbon nano layer is spaced apart from the second conductive semiconductor layer,
And a zinc oxide nano rod in contact with the second conductive semiconductor layer. 5. The method according to any one of claims 1 to 4,
The carbon nano layer is
Light emitting device comprising a graphene layer (Graphene layer). 6. The method of claim 5,
The thickness of the carbon nano layer is 0.1nm ~ 100nm light emitting device. The method according to claim 1,
The light emitting device further comprises a second electrode on the carbon nano layer.
KR1020110079158A 2011-08-09 2011-08-09 Light emitting device KR20130016947A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160013554A (en) * 2014-07-28 2016-02-05 엘지이노텍 주식회사 Light emitting device and lighting system
KR20160072372A (en) * 2014-12-12 2016-06-23 삼성디스플레이 주식회사 Organic light emitting display device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160013554A (en) * 2014-07-28 2016-02-05 엘지이노텍 주식회사 Light emitting device and lighting system
KR20160072372A (en) * 2014-12-12 2016-06-23 삼성디스플레이 주식회사 Organic light emitting display device and method of manufacturing the same

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