KR20130013717A - Method of recycling glass substrate for flex electrophoretic display device and method of fabricating flexible electrophoretic display device using thereof - Google Patents

Method of recycling glass substrate for flex electrophoretic display device and method of fabricating flexible electrophoretic display device using thereof Download PDF

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KR20130013717A
KR20130013717A KR1020110075482A KR20110075482A KR20130013717A KR 20130013717 A KR20130013717 A KR 20130013717A KR 1020110075482 A KR1020110075482 A KR 1020110075482A KR 20110075482 A KR20110075482 A KR 20110075482A KR 20130013717 A KR20130013717 A KR 20130013717A
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South Korea
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layer
electrophoretic
glass substrate
substrate
display device
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KR1020110075482A
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Korean (ko)
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이준희
정영섭
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엘지디스플레이 주식회사
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Publication of KR20130013717A publication Critical patent/KR20130013717A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/1675—Constructional details
    • G02F2001/1678—Constructional details characterised by the composition or particle type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/60—Glass recycling

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)

Abstract

The present invention relates to a method for manufacturing an electrophoretic display device which can reduce manufacturing costs by recycling a glass substrate of a flexible electrophoretic display device, the method comprising: providing a glass substrate; Forming a sacrificial layer on the substrate; Forming a buffer layer on the sacrificial layer; Forming a thin film transistor and a pixel electrode on the buffer layer; Separating the substrate from the buffer layer; Forming an electrophoretic layer on the pixel electrode; Attaching a substrate on the electrophoretic layer; Attaching the flexible substrate to the buffer layer; And removing and providing the sacrificial layer of the glass substrate separated from the buffer layer.

Description

Glass substrate recycling method for flexible electrophoretic display device and manufacturing method of electrophoretic display device using the same {{

The present invention relates to a method for recycling a glass substrate for a flexible electrophoretic display device and a method for manufacturing an electrophoretic display device using the recycled glass substrate.

An electrophoretic display device is an image display device using a phenomenon in which colloidal particles move to either polarity when a pair of electrodes to which voltage is applied is immersed in a colloidal solution. Unlike a liquid crystal display device, since it does not use a backlight and has advantages such as a wide viewing angle, high reflectance, and low power consumption, it has been in the spotlight as a bendable display such as electronic paper.

Such an electrophoretic display device has a structure in which an electrophoretic layer is interposed between two substrates. One of the two substrates is composed of a transparent substrate, and the other substrate is composed of an array substrate on which driving elements are formed, so that an image can be displayed in a reflective mode reflecting light input from the outside of the device.

In particular, recently, an electrophoretic display device that can bend by providing an electrophoretic display device using a flexible plastic substrate is provided. The flexible electrophoretic display device is manufactured by forming a thin film transistor and an electrophoretic layer on a glass substrate, and then separating the electrophoretic display device fabricated from the glass substrate and attaching the same to a flexible plastic substrate. Referring to the manufacturing method of the electrophoretic display device as follows.

1 is a flowchart schematically illustrating a method of manufacturing a conventional flexible electrophoretic display device. As shown in FIG. 1, first, after providing a glass substrate, a sacrificial layer is formed on the glass substrate (S101 and S102). The sacrificial layer solves problems such as deterioration of adhesion characteristics due to deterioration of interface characteristics when the glass substrate is in contact with other insulating materials, and smooth separation without damage to the interface when the substrate is subsequently separated from the manufactured electrophoretic display device. It is to. The glass substrate is a mother substrate on which a plurality of unit display panels are formed.

Thereafter, after coating polyimide on the sacrificial layer (S103), a thin film transistor and various wirings are formed on the polyimide (S104). Next, an electrophoretic layer is formed (S105). The electrophoretic layer may include a capsule filled with white particles and black particles, or white particles and black particles may be distributed in a dispersion medium.

Subsequently, the glass substrate of the ledger unit is cut and separated into a plurality of unit display panels (S106). Then, a flexible circuit board is attached to each of the separated display panels so that various signals are applied from the outside. A module process for mounting the back is performed (S107).

Thereafter, the glass substrate is separated from the unit display panel where the module process is completed (S108), and then a plastic substrate is attached to the polyimide of the separated display panel to complete the flexible electrophoretic display device (S109).

However, the flexible electrophoretic display device manufactured by the above method has the following problems.

The glass substrate is used as a base for manufacturing the electrophoretic display element, and is disposed of after the electrophoretic display element is manufactured. However, as the glass substrate is an expensive product, there is a problem in that the manufacturing cost of the electrophoretic display device increases as the glass substrate is discarded.

The present invention is to solve the above problems, after separating the glass substrate used to manufacture the flexible electrophoretic display device from the electrophoretic structure to remove the material laminated on the glass substrate again in the method of manufacturing the electrophoretic display device An object of the present invention is to provide a method for recycling a glass substrate for a flexible electrophoretic display device and a method of manufacturing an electrophoretic display device using the same.

In order to achieve the above object, the electrophoretic display device manufacturing method according to the present invention comprises the steps of providing a glass substrate; Forming a sacrificial layer on the substrate; Forming a buffer layer on the sacrificial layer; Forming a thin film transistor and a pixel electrode on the buffer layer; Separating the substrate from the buffer layer; Forming an electrophoretic layer on the pixel electrode; Attaching a substrate on the electrophoretic layer; Attaching the flexible substrate to the buffer layer; And removing and providing the sacrificial layer of the glass substrate separated from the buffer layer.

The sacrificial layer is composed of a SiNx layer and an amorphous silicon layer, the step of removing the sacrificial layer is a first dry etching the sacrificial layer by plasma in a gas atmosphere consisting of SF 6 , He, HCl and SF 6 and He The second dry etching of the sacrificial layer by the plasma in the gas atmosphere is made.

At this time, the flow rate of SF 6 , He, HCl in the first dry etching step is 200sccm (cm 3 / min), 300sccm (cm 3 / min), 300sccm (cm 3 / min), respectively, the second dry etching The flow rates of SF 6 and He are 200 sccm (cm 3 / min) and 300 sccm (cm 3 / min), respectively, and the first dry etching is performed for 20 seconds and the second dry etching is 10 seconds. Is executed.

In addition, the glass substrate recycling method for producing an electrophoretic display device according to the present invention is separated from the electrophoretic structure, providing a glass substrate in which an insulating layer and an amorphous silicon layer is laminated on the top; First etching the insulating layer and the amorphous silicon layer by plasma in a gas atmosphere consisting of SF 6 , He, and HCl; And a second dry etching of the insulating layer and the amorphous silicon layer by plasma in a gas atmosphere consisting of SF 6 and He.

In the present invention, since the glass substrate used for fabricating the flexible electrophoretic display device is removed from the upper residue by dry etching using plasma, and then used for the fabrication of the flexible electrophoretic display device, the conventional expensive glass substrate is used once. Compared with disposal after use, the manufacturing cost can be greatly reduced.

In addition, in the present invention, since the residue of the glass substrate is removed by adjusting the gas atmosphere of the plasma, damage to the glass substrate can be prevented, and as a result, the glass substrate can be recycled several times.

1 is a flow chart showing a method of manufacturing a conventional flexible electrophoretic display device.
2 is a flow chart showing a method of manufacturing a flexible electrophoretic display device according to the present invention.
3A to 3G are cross-sectional views showing an actual manufacturing method of a flexible electrophoretic display device according to the present invention.
Figure 4 is a view showing the dry etching of the glass substrate according to the present invention.
5A-5D show the surfaces of glass substrates, one dry etched glass substrate, five dry etched glass substrates, and 15 dry etched glass substrates, respectively, separated from the electrophoretic structure.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

2 is a view showing a method for manufacturing a flexible electrophoretic display device according to the present invention.

As shown in FIG. 2, first, a glass substrate on which a plurality of unit display panels are formed is provided (S201), and a sacrificial layer is formed on the glass mother substrate (S202). The sacrificial layer is made of a Si-based material such as glass to improve the interfacial properties with other films of the electrophoretic display device to be formed in the future. In this case, the sacrificial layer may be formed of a single layer or may be formed of a plurality of layers.

Subsequently, after the polyimide is coated on the sacrificial layer (S203), the thin film transistor and various wirings are formed on the polyimide through a thin film transistor process such as a photo process (S204). Subsequently, the glass mother substrate is separated from the polyimide (S205). In this case, the separation of the glass mother substrate is performed by separating the sacrificial layer from the polyimide by changing the interface characteristics of the sacrificial layer and the polyimide by irradiating ultraviolet rays such as a laser to the sacrificial layer from the rear surface of the glass substrate.

The sacrificial layer formed on the separated glass mother substrate is removed by dry etching (S210). In this case, the dry etching process is optimally made so that the glass mother substrate is not damaged. The glass mother substrate from which the sacrificial layer has been removed is supplied to the glass mother substrate providing step (S201) and recycled.

An electrophoretic layer is formed on the electrophoretic structure separated from the glass mother substrate (S206). The electrophoretic layer may include a dispersion medium, a capsule filled with white particles and black particles and dispersed in the dispersion medium, or may include a dispersion medium and white particles and black particles dispersed therein.

Subsequently, the electrophoretic structure is cut and separated into a plurality of unit display panels (S207). Then, a flexible circuit board is attached to each of the separated display panels so that various signals are applied from the outside, and a driving element is attached to the flexible circuit board. The module process to be mounted is performed (S208). Thereafter, a plastic substrate is attached to the polyimide of the separated display panel to complete the flexible electrophoretic display device (S209).

As described above, in the present invention, after the glass mother substrate is separated from the electrophoretic structure, the sacrificial layer stacked thereon is removed by dry etching, and the glass mother substrate can be used to manufacture the electrophoretic display device again. Therefore, the manufacturing cost of the electrophoretic display device can be significantly reduced as compared with the case of using and discarding the expensive glass mother substrate once.

Referring to the electrophoretic display device manufacturing method of the present invention as described above in more detail.

3A to 3G illustrate a method of manufacturing an electrophoretic display device. In this case, the glass substrate is a mother substrate on which a plurality of display panels are formed, and a plurality of pixel regions are formed on each display panel. However, only one pixel is illustrated for convenience of description. The glass substrate to be described later refers to a mother substrate on which a plurality of display panels are formed.

First, as shown in FIG. 3A, a sacrificial layer is formed by stacking an insulating layer 102 made of an Si-based inorganic insulating material such as SiNx and the like, and an amorphous silicon (a-Si) layer 104 on a glass substrate 101. do. Since the glass is made of Si-based material, the insulating layer 102 and the amorphous silicon layer 104 are laminated to improve the interfacial property with the material to be laminated later, thereby separating the electrophoretic structure and the glass substrate 101 formed thereafter. It can be prevented, and in the subsequent glass substrate separation process it is possible to smoothly separate the glass substrate 101 from the electrophoretic structure. Subsequently, a buffer layer 120 made of polyimide is formed on the amorphous silicon layer 104.

Thereafter, as illustrated in FIG. 3B, an opaque metal having good conductivity such as Cr, Mo, Ta, Cu, Ti, Al, or Al alloy is deposited on the buffer layer 120 by a sputtering process. After the gate electrode 111 is formed by etching by a photolithography process, SiO 2 or SiNx or the like is formed by CVD (Chemicla Vapor Deposition) method over the entire buffer layer 120 on which the gate electrode 111 is formed. A gate insulating layer 122 is formed by stacking the same inorganic insulating material.

Subsequently, a semiconductor material such as amorphous silicon (a-Si) is stacked over the buffer layer 120 by CVD and then etched to form a semiconductor layer 113. Although not shown in the drawing, an amorphous silicon doped with impurities or doped with impurities is doped in a part of the semiconductor layer 113, and the ohmic contact (not shown) in which a source electrode and a drain electrode, which will be formed later, Thereby forming an ohmic contact layer.

Subsequently, an electrically conductive opaque metal such as Cr, Mo, Ta, Cu, Ti, Al, or Al alloy is laminated by sputtering, and then etched to etch the source electrode on the semiconductor layer 113, strictly speaking, on the ohmic contact layer. A 115 and a drain electrode 116 are formed to form a thin film transistor.

Subsequently, as shown in FIG. 3C, an organic insulating material such as BCB (Benzo Cyclo Butene) or photo acryl is formed over the buffer layer 120 in which the source electrode 115 and the drain electrode 116 are formed. The protective layer 124 is formed by lamination.

Also, although not shown in the figure, the protective layer 124 may be formed of a plurality of layers. For example, the protective layer 124 may be formed as a double layer of the inorganic insulating layer made of an inorganic insulating material such as a layer of organic insulation made of an organic insulating material such as BCB or the picture acrylic and SiO 2, or SiNx, inorganic An insulating layer, an organic insulating layer, and an inorganic insulating layer. As the organic insulating layer is formed, the surface of the protective layer 124 is formed flat and the interface characteristic with the protective layer 124 is improved by applying the inorganic insulating layer.

Thereafter, a contact hole 128 is formed in the protective layer 124 to expose the drain electrode 116 of the thin film transistor to the outside, and then indium tin oxide (ITO) or indium tin oxide (IZO) on the protective layer 124. A pixel electrode 118 is formed by stacking a transparent conductive material such as zinc oxide or a conductive metal such as Al or Al alloy. In this case, the pixel electrode 118 is electrically connected to the drain electrode 116 of the thin film transistor through the contact hole 128 formed in the protective layer 124.

Subsequently, as illustrated in FIG. 3D, the glass substrate 101, the insulating layer 102, and the amorphous silicon layer 104 are separated from the electrophoretic structure formed on the buffer layer 120. The separation of the glass substrate 101 is performed by scanning light such as a laser or irradiating a plurality of set areas on the rear surface of the glass substrate 101. As the laser or the light is irradiated, the physical property of the interface of the amorphous silicon layer 104 in contact with the buffer layer 120 is changed, so that the organic material of the buffer layer 120 made of amorphous silicon and polyimide is broken, thereby causing the glass substrate to be broken. 101 is separated from the buffer layer 120.

An insulating layer 102 and an amorphous silicon layer 104 are stacked on the separated glass substrate 101. In the present invention, since the glass substrate 101 separated from the electrophoretic structure must be recycled, the insulating layer 102 and the amorphous silicon layer 104 stacked on the separated glass substrate 101 must be removed. Removal of the insulating layer 102 and the amorphous silicon layer 104 is performed by dry etching using plasma, which will be described later in more detail.

As shown in FIG. 3E, the electrophoretic layer 160 is formed by applying an electrophoretic material on top of the electrophoretic structure from which the glass substrate 101 is separated. The electrophoretic material may be a material in which a capsule 162 filled with an electronic ink in a polymer binder is distributed. In this case, the electron ink distributed in the capsule is composed of black particles 164 (or black ink) and white particles 166 (or white ink), wherein the white particles and the black particles have positive and negative charge characteristics, respectively. Has

In the case of white particles, particles having good reflectivity such as TiO 2 are used, and in the case of black particles, particles having black characteristics such as carbon black are used. In this case, the white particles 166 may have negative charge characteristics and the black particles 164 may have positive charge characteristics.

In addition, the electrophoretic material may be composed of particles having positive and negative charge characteristics. In this case, the particles may be white particles and black particles, color particles such as cyan, magenta, yellow, or colors such as R (Red), G (Green), and B (Blue). It may be a particle. In the case of the color particles as a pigment having a charge characteristic, the color particles may have a negative charge or may have a negative charge. The electrophoretic material may include a dispersion medium such as a liquid polymer. This dispersion medium is a black particle, a white particle, or a colored particle, and may be a liquid such as a liquid polymer or air itself. As described above, when the dispersion medium is the air itself, it means that the particles move in the air as the voltage is applied without the dispersion medium.

The application of the electrophoretic material onto the electrophoretic structure can be accomplished by a variety of methods. For example, the electrophoretic material may be applied by an inkjet method or a nozzle method. In the inkjet method or the nozzle method, an electrophoretic material is filled in the syringe (or nozzle), the syringe is positioned on the substrate, and pressure is applied to the syringe 185 by an external air supply device. As the syringe moves on the electrophoretic structure at the electrophoretic material is dropped to form an electrophoretic layer on the electrophoretic structure.

In addition, the application of the electrophoretic material may be made by a squeeze method. In the squeeze method, after the electrophoretic material is laminated on the electrophoretic structure, the electrophoretic material is uniformly coated on the electrophoretic structure by the pressure of the squeeze bar by moving on the electrophoretic structure by the squeeze bar, and thus the electrophoretic layer 160 This is to be formed.

Of course, the application of the electrophoretic material in the present invention is not limited to the above method, various electrophoretic layer 160 forming process such as casting printing, bar coating printing, screen printing, mold printing method is the present invention Could be applied to

After forming the electrophoretic layer 160 on the electrophoretic structure as described above, as shown in Figure 3f, by applying a sealing material on the electrophoretic layer 160 to form a sealing layer 141 to the electrophoresis After sealing the layer 160, the substrate 140 is attached to the electrophoretic structure to complete the electrophoretic display device.

The sealing layer 141 is intended to prevent the electrophoretic layer 160 made of a dye having a low viscosity flows so that the dye overflows to an external or adjacent pixel. In addition, the sealing layer 141 prevents moisture from penetrating into the electrophoretic layer 160 and the electrophoretic layer 160 becomes defective.

Although not shown in the figure, an interlayer insulating layer may be formed between the electrophoretic layer 160 and the sealing layer 141. The interlayer insulating layer is to solve the defect caused by the electrophoretic particles are electrically attached to the sealing layer 168, it may be formed of an organic material or an inorganic material.

The substrate 140 is made of a flexible substrate such as plastic or a flexible film such as polystyrene or polycarbonate, and the common electrode 142 is formed on the substrate 140. The common electrode 142 is formed by stacking a transparent conductive material such as ITO or IZO. In addition, a color filter layer 144 may be formed on the substrate 140. This color filter layer is composed of R (Red), G (Green), B (Blue) color filter, and the color is realized when the electrophoretic material is composed of black particles and white particles. When the electrophoretic material is composed of a dispersion medium and color particles distributed in the dispersion medium, the incident light is reflected by the color filter and outputs light of a corresponding color, thereby eliminating the need for a color filter layer.

Thereafter, as shown in FIG. 3G, the flexible substrate 150, such as plastic, is attached to the lower surface of the buffer layer 120 to complete the flexible electrophoretic display device.

In the electrophoretic display device manufactured as described above, when a signal is applied to the pixel electrode 118, an electric field is generated between the common electrode 142 and the pixel electrode 118, and the inside of the capsule 162 by the electric field. The black particles 164 and white particles 166 move toward the common electrode 142 or the pixel electrode 118 to realize an image.

For example, when a (-) voltage is applied to the pixel electrode 118 on the flexible substrate 150 and a (+) voltage is applied to the common electrode 142 on the substrate 140, the positive charge is displayed. The white particles 166 move toward the flexible substrate 150, and the black particles 164 having a negative charge move toward the substrate 140. In this state, when light is input from the outside, that is, the upper portion of the substrate 140, the input light is reflected by the black particles 176, so that black is implemented in the electrophoretic display device.

On the contrary, when a positive voltage is applied to the pixel electrode 118 on the flexible substrate 150 and a negative voltage is applied to the common electrode 142 on the substrate 140, white is charged. The particles 166 move to the substrate 140, and the black particles 164 having a negative charge move to the flexible substrate 150. In this state, when light is input from the outside, that is, the upper portion of the substrate 140, the input light is reflected by the white particles 166, so that the electrophoretic display device is implemented with white.

As described above, in the present invention, after the electrophoretic structure is formed on the glass substrate 101, the glass substrate 101 is separated from the electrophoretic structure, and a flexible substrate such as plastic is attached to the completed electrophoretic structure. By doing so, the flexible electrophoretic display device can be completed.

At this time, the glass substrate 101 separated from the electrophoretic structure removes the insulating layer 102 and the amorphous silicon layer 104 stacked for recycling, and is then supplied to the glass substrate supplying step S201.

Removal of the insulating layer 102 and the amorphous silicon layer 104 is performed by a dry etching method using a plasma. That is, as shown in FIG. 4, after arranging the glass substrate 101 on which the insulating layer 102 and the amorphous silicon layer 104 are stacked, a plasma is generated to generate the plasma and the insulating layer 102 by the plasma. By dry etching the amorphous silicon layer 104, the insulating layer 102 and the amorphous silicon layer 104 can be removed.

At this time, since the glass substrate 101 must be recycled, if the glass substrate 101 is damaged when the insulating layer 102 and the amorphous silicon layer 104 are removed, the electrophoretic display device is used by using the glass substrate 101. In manufacturing, a defect occurs in the electrophoretic display device.

In the present invention, when the insulating layer 102 and the amorphous silicon layer 104 are removed, dry etching is performed in two stages to prevent damage to the glass substrate 101, and the gas atmosphere and the etching time of each stage are performed. Adjust.

Dry etching of the first stage is dry etching for about 20 seconds in a gas atmosphere composed of SF 6 , He, HCl, and the flow rate of the supplied gas is 200 sccm (cm 3 / min) for SF 6 , and 300 sccm (cm for He 3 / min), HCl is 300 sccm (cm 3 / min). By the first dry etching, most of the insulating layer 102 and the amorphous silicon layer 104 stacked on the glass substrate 101 are removed.

Dry etching of the second phase are SF 6 and the flow rate of gas running dry etching in a gas atmosphere for about 10 seconds consisting of He, and wherein supply of SF 6 is 200sccm (cm 3 / min) and He is 300sccm (cm 3 / min). By this second dry etching, the insulating layer 102 and the amorphous silicon layer 104 remaining on the glass substrate 101 can be completely removed.

In addition, the insulating layer 102 and the amorphous silicon layer 104 are etched through the two-step dry etching process by adjusting the type of gas, the flow rate of the gas, and the dry time as described above, so that the insulating layer 102 and the amorphous silicon are etched. In addition to being able to completely remove the layer 104, it is possible to prevent the glass substrate 101 from being damaged by dry etching.

The recycling of the glass substrate 101 may be repeated several times. In the present invention, the glass substrate 101 can be recycled up to 15 times by removing the insulating layer 102 and the amorphous silicon layer 104 on the upper surface by the two-step dry etching as described above. That is, according to the present invention, even if the dry process of removing the insulating layer 102 and the amorphous silicon layer 104 is repeated up to 15 times, no damage occurs to the glass substrate 101. It can be recycled.

FIG. 5A is a view showing the surface of the glass substrate 101 separated from the electrophoretic structure by laminating an insulating layer 102 and an amorphous silicon layer 104 on the upper surface thereof, and FIG. 5B shows one recycling process (that is, 1 in 20 seconds). FIG. 5C shows a glass substrate 101 which has undergone five recycling processes and FIG. 5D shows 15 recycling processes that have undergone a step dry etching process and a 10 second two-step dry etching process. Rough glass substrate 101.

As shown in FIG. 5A, an insulating layer 102 and an amorphous silicon layer 104 are stacked on the surface of the glass substrate 101 separated from the electrophoretic structure, thereby making the surface uneven by these materials.

As shown in FIG. 5B, both the insulating layer 102 and the amorphous silicon layer 104 stacked on the surface of the glass substrate 101 subjected to the two-step dry etching process are removed by plasma ions, thereby providing a smooth surface. It becomes a state. At this time, no damage occurs to the surface of the glass substrate 101.

As shown in FIGS. 5C and 5D, the glass substrate 101, which has undergone five recycling processes and 15 recycling processes, also has an insulating layer 102 and an amorphous silicon layer 104 completely removed from the surface thereof. Since damage does not occur, the glass substrate 101 can be recycled even after a plurality of dry etching processes.

As described above, in the present invention, since the glass substrate used to manufacture the flexible electrophoretic display device can be recycled, manufacturing cost can be greatly reduced. In addition, in the present invention, since the insulating layer and the amorphous silicon layer laminated on the glass substrate are removed by two-step dry etching by changing the type of gas, it is possible to recycle several times without damaging the glass substrate.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.

Therefore, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention defined in the following claims are also within the scope of the present invention.

101: glass substrate 102: insulating layer
104: amorphous silicon layer 120: buffer layer
111: gate electrode 113: semiconductor layer
115: source electrode 116: drain electrode
118: pixel electrode 150: flexible substrate
160: electrophoretic layer

Claims (19)

Providing a glass substrate;
Forming a sacrificial layer on the substrate;
Forming a buffer layer on the sacrificial layer;
Forming a thin film transistor and a pixel electrode on the buffer layer;
Separating a glass substrate from the buffer layer;
Forming an electrophoretic layer on the pixel electrode;
Attaching a substrate on the electrophoretic layer;
Attaching the flexible substrate to the buffer layer; And
And removing the sacrificial layer of the glass substrate separated from the buffer layer and providing the sacrificial layer. The method of claim 1, wherein the sacrificial layer,
Insulating layer; And
An electrophoretic display device manufacturing method comprising an amorphous silicon layer formed on the insulating layer. The method of claim 2, wherein the insulating layer comprises a SiN x layer. The method of claim 2, wherein removing the sacrificial layer comprises:
First etching the sacrificial layer by plasma in a gas atmosphere consisting of SF 6 , He, and HCl; And
And a second dry etching of the sacrificial layer by plasma in a gas atmosphere consisting of SF 6 and He. 5. The method of claim 4, wherein the flow rates of SF 6 , He, and HCl in the first dry etching step are 200 sccm (cm 3 / min), 300 sccm (cm 3 / min), and 300 sccm (cm 3 / min), respectively. The flow rates of SF 6 and He in the second dry etching step are 200 sccm (cm 3 / min) and 300 sccm (cm 3 / min), respectively. The method of claim 4, wherein the first dry etching is performed for 20 seconds and the second dry etching is performed for 10 seconds. The method of claim 1, wherein the glass substrate is recycled and provided at least 15 times. The method of claim 1, wherein the forming of the electrophoretic layer comprises applying the electrophoretic material by one of inkjet, squeeze, casting, bar coating, screen printing, and mold printing. Electrophoretic display device manufacturing method comprising the step of. The method of claim 8, wherein the electrophoretic material,
Dispersion medium; And
A method for manufacturing an electrophoretic display device, characterized in that it is distributed in the dispersion medium and comprises a capsule including white particles and black particles therein. The method of claim 8, wherein the electrophoretic material,
Dispersion medium; And
Electrophoretic display device manufacturing method comprising the white particles and black particles distributed in the dispersion medium. The method of claim 1, further comprising forming a common electrode on the substrate. The method of claim 1, wherein the separating of the glass substrate from the buffer layer comprises irradiating ultraviolet rays from the rear surface of the glass substrate. The method of claim 1, wherein the glass substrate is a mother substrate on which a plurality of unit display panels are formed. The method of claim 13, further comprising cutting the mother substrate on which the electrophoretic layer is formed and separating the mother substrate into unit display panels. The method of claim 1, wherein the buffer layer is made of polyimide. Providing a glass substrate separated from the electrophoretic structure and having an insulating layer and an amorphous silicon layer stacked thereon;
First etching the insulating layer and the amorphous silicon layer by plasma in a gas atmosphere consisting of SF 6 , He, and HCl; And
And a second dry etching of the insulating layer and the amorphous silicon layer by plasma in a gas atmosphere consisting of SF 6 and He. 17. The method of claim 16, wherein the insulating layer comprises a SiNx layer. The method of claim 16, wherein the flow rate of SF 6 , He, HCl in the first dry etching step is 200sccm (cm 3 / min), 300sccm (cm 3 / min), 300sccm (cm 3 / min), respectively, The flow rate of SF 6 and He in the second dry etching step is 200 sccm (cm 3 / min) and 300 sccm (cm 3 / min), respectively. The method of claim 16, wherein the first dry etching is performed for 20 seconds and the second dry etching is performed for 10 seconds.
KR1020110075482A 2011-07-28 2011-07-28 Method of recycling glass substrate for flex electrophoretic display device and method of fabricating flexible electrophoretic display device using thereof KR20130013717A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150002251A (en) * 2013-06-28 2015-01-07 엘지디스플레이 주식회사 Method of fabricating flexible display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150002251A (en) * 2013-06-28 2015-01-07 엘지디스플레이 주식회사 Method of fabricating flexible display device

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