KR20130007392A - Apparatus and method for edge processing of wafe - Google Patents
Apparatus and method for edge processing of wafe Download PDFInfo
- Publication number
- KR20130007392A KR20130007392A KR1020110101702A KR20110101702A KR20130007392A KR 20130007392 A KR20130007392 A KR 20130007392A KR 1020110101702 A KR1020110101702 A KR 1020110101702A KR 20110101702 A KR20110101702 A KR 20110101702A KR 20130007392 A KR20130007392 A KR 20130007392A
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- KR
- South Korea
- Prior art keywords
- substrate
- edge
- image
- support plate
- inspecting
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
The present invention relates to an edge exposure method of a substrate in a photolithography facility. The present invention comprises the steps of mounting the substrate on the support plate; Inspecting a bead removal state at an edge of the substrate seated on the support plate; And exposing an edge of the substrate seated on the support plate, wherein inspecting the bead removal state comprises imaging the substrate seated on the support plate to obtain a first image of the substrate, and obtaining the first image. 1 is done by examining the image.
Description
The present invention relates to a photolithography facility, and more particularly, to a method and apparatus for processing r-edges of a substrate.
Generally, a semiconductor device uses a deposition process for forming a film on a substrate, a chemical mechanical polishing process for planarizing the film, a photolithography process for forming a photoresist pattern on the film, and the photoresist pattern. An etching process for forming the film into a pattern having electrical characteristics, an ion implantation process for implanting specific ions into a predetermined region of the substrate, a cleaning process for removing impurities on the substrate, and a substrate on which the film or pattern is formed And inspection steps for inspecting the surface and the components and concentration of the film.
A photolithography process is performed to form a photoresist pattern on a semiconductor substrate made of silicon. The photolithography process includes a coating and soft baking process for forming a photoresist film on a substrate, an exposure and development process for forming a photoresist pattern from the photoresist film, and an edge for removing edge portions of the photoresist film or pattern. Edge bead removal (hereinafter referred to as 'EBR') process, edge exposure of wafer (hereinafter referred to as 'EEW') process, hard baking process for stabilizing and densifying the photoresist pattern, and the like. .
The EBR process and the EEW process decontaminate the edge of the photoresist film or pattern during the subsequent process using the photoresist film or pattern, i. This may be done so it is done to eliminate it.
However, existing photolithography equipment has no way of evaluating the progress of EBR or EEW processes.
The present invention provides a substrate edge processing method and apparatus capable of confirming the results of the edge bead removal (EBR) process and the edge exposure of wafer (EEW) process. It is to provide.
The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.
In order to achieve the above object, the substrate edge processing method according to an embodiment of the present invention comprises the steps of mounting the substrate on the support plate; Inspecting a bead removal state at an edge of the substrate seated on the support plate; And exposing an edge of the substrate seated on the support plate, wherein the checking of the bead removal state comprises photographing the substrate seated on the support plate to obtain a first image of the substrate, and obtaining the first image. This can be done by examining the image.
According to an embodiment of the present disclosure, after the exposing of the edge of the substrate, the method may further include inspecting an edge exposure state of the substrate seated on the support plate, and the inspecting the edge exposure state may include: Imaging the substrate seated at and obtaining a second image of the substrate and inspecting the obtained second image.
According to an exemplary embodiment of the present disclosure, the first image of the substrate may be continuously obtained by an imaging camera in which the substrate loaded on the support plate is fixed at a predetermined position during one rotation.
According to an embodiment of the present disclosure, the first image of the substrate may be obtained discontinuously by an imaging camera in which the substrate loaded on the support plate is fixed at a predetermined position when one rotation is performed.
According to an embodiment of the present invention, the imaging camera is an area camera that captures an image by an area scan method.
According to an embodiment of the present disclosure, the checking of the bead removal state may measure a width at which the beads are removed from the first image of the substrate and detect particles.
Substrate edge processing method of the present invention for achieving the above object comprises the steps of removing the beads at the edge of the substrate; Inspecting bead removal at the edge of the substrate; Exposing an edge of the substrate; Inspecting an edge exposure state of the substrate; The inspecting step of the bead removing state, the edge exposing step, and the inspecting edge exposing state are performed in the same apparatus.
According to an embodiment of the present disclosure, the bead removal state inspection step may be performed by acquiring a first image from the substrate and inspecting the acquired first image, wherein the edge exposure state inspection step may be performed by obtaining a second image from the substrate. By acquiring and examining the acquired second image.
Substrate edge processing method for achieving the above object is the step of mounting the substrate on the support plate; Examining a bead removal condition at an edge of the substrate seated on the support plate; The checking of the bead removal state may be performed by capturing an edge of the substrate seated on the support plate to obtain a first image of the substrate and inspecting the obtained first image.
According to an embodiment of the present disclosure, after the checking of the bead removal state, the method may further include exposing an edge of the substrate seated on the support plate.
According to an embodiment of the present disclosure, after the exposing of the edge of the substrate, the method may further include inspecting an edge exposure state of the substrate seated on the support plate.
According to an embodiment of the present disclosure, the inspecting of the edge exposure state may include capturing the substrate mounted on the support plate to obtain a second image of the substrate different from the first image, and obtaining the second image. By inspection.
Substrate edge exposure apparatus for achieving the above object is a support plate for supporting the substrate; An eccentric detector for measuring an eccentricity of the substrate placed on the support plate; An imaging member which acquires a first image from an edge of the substrate placed on the support plate; An ultraviolet irradiation member for irradiating ultraviolet rays to the edge of the substrate; And an image processor configured to receive the first image acquired from the imaging member and detect a width of the bead removal region.
According to an embodiment of the present disclosure, the imaging member may acquire the first image discontinuously from the edge of the substrate when the substrate is rotated.
According to an embodiment of the present invention, the eccentric detection unit may use a charge coupler device (CCD), and the image pickup member may use an area camera for imaging in an area scan method.
Substrate processing apparatus for achieving the above object is an index unit having a load port and the index robot is placed a container containing the substrate; A process processing unit connected to the indix unit and having a coating processing unit for applying a photoresist on a substrate, and a developing unit for developing the substrate after the exposure process; An interface unit for transferring the substrate between the exposure apparatus on which the exposure process on the substrate is performed and the process processor; And an edge exposure unit that inspects the edge exposure process of the substrate and the bead removal state of the substrate edge.
According to an embodiment of the present disclosure, the edge exposure unit may be installed in the interface unit or the processing unit.
According to an embodiment of the present invention, the edge exposure unit includes a support plate for supporting a substrate; An eccentric detector for measuring an eccentricity of the substrate placed on the support plate; An imaging member which acquires a first image from an edge of the substrate placed on the support plate; An ultraviolet irradiation member for irradiating ultraviolet rays to the edge of the substrate; And an image processor configured to receive the first image acquired from the imaging member and detect a width of the bead removal region.
According to the present invention, the results of performing the edge bead removal process and the edge exposure process can be confirmed.
The drawings described below are for illustrative purposes only and are not intended to limit the scope of the invention.
1 is a perspective view of a photolithography facility used in a substrate processing method according to an embodiment of the present invention.
2 is a view showing a coating treatment unit in the installation of FIG.
3 is a view illustrating a developing unit in the installation of FIG. 1.
4 is a side view for explaining the edge exposure unit.
5 is a plan view for explaining the edge exposure unit.
6 is a flowchart for explaining a substrate edge exposure method.
Hereinafter, a method of exposing a substrate edge in a photolithography apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same or similar components throughout the drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
(Example)
1 is a perspective view of a photolithography facility used in a substrate processing method according to an embodiment of the present invention. FIG. 2 is a view showing a coating treatment unit in the facility of FIG. 1, and FIG. 3 is a view showing a developing treatment unit in the facility of FIG. 1.
1 to 3, the
The substrate W is moved in the state accommodated in the
(Index part)
The
The
The
The
(Process Processing Unit)
In the
The
The
The
The
The
The
The developing
The developing
The developing
The
The developing
The
(Interface part)
The
4 and 5 are diagrams for explaining the edge exposure unit.
4 and 5, the
The
The
The rotating
The moving
The
The
The driving
The
The
The
The
The result calculated by the
An edge exposure area of the substrate W refers to an area where the photoresist film formed on the substrate W is removed through an edge exposure of wafer (EEW) process and an edge bead removal (EBR) process. do. Since the width of the edge bead removal area is narrower than the width of the edge exposure area, the step of inspecting the width of the edge bead removal area is performed before the edge exposure process. Although not shown, the image pickup member and the image processing unit for inspecting the edge bead removal state of the substrate may be provided as separate units in the processing unit instead of the edge exposure unit. That is, the unit for inspecting the edge bead removal state may be installed in the processing unit, and the configuration may include a support plate on which the substrate is seated and rotatable, an image pickup member for imaging the substrate edge, and an image processing unit.
6 is a flowchart for explaining a substrate edge exposure method.
In the edge exposing method of the
Support plate mounting step (S110)
The substrate is transferred to the
-Substrate eccentricity detection and edge bead removal state inspection step (S120)-
The substrate W is rotated once in a state of being seated on the
The
-Substrate edge exposure step (S130)-
The substrate is rotated about the center point of the substrate calculated in the substrate eccentric detection step, and the
-Checking the edge exposure state (S140)-
When the substrate edge exposure is completed, the substrate is rotated once again while seated on the
The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.
100: index portion 200: process treatment portion
700: interface unit 900: exposure apparatus
Claims (18)
Mounting the substrate on the support plate;
Inspecting a bead removal state at an edge of the substrate seated on the support plate; And
Exposing an edge of the substrate seated on the support plate;
Examining the bead removal state
And photographing the substrate mounted on the support plate to obtain a first image of the substrate and inspecting the obtained first image.
After the exposing the edge of the substrate, further comprising inspecting an edge exposure state of the substrate seated on the support plate,
Examining the edge exposure state
And photographing the substrate seated on the support plate to obtain a second image of the substrate and inspecting the obtained second image.
The first image of the substrate
And a substrate loaded on the support plate is continuously obtained by an imaging camera fixed at a predetermined position in one rotation.
The first image of the substrate
And a substrate loaded on the support plate is obtained discontinuously by an imaging camera fixed at a predetermined position in one rotation.
The imaging camera
A method of processing a substrate edge, characterized in that it is an area camera for imaging by an area scan method.
Examining the bead removal state
Measuring a width at which beads are removed from the first image of the substrate, and detecting particles.
Removing the beads at the edge of the substrate;
Inspecting bead removal at the edge of the substrate;
Exposing an edge of the substrate;
Inspecting an edge exposure state of the substrate;
And inspecting the bead removal state, the edge exposure step, and the edge exposure state are performed in the same apparatus.
The bead removal state inspection step is performed by acquiring a first image from the substrate and inspecting the acquired first image,
And the edge exposure state inspection step is performed by acquiring a second image from the substrate and inspecting the acquired second image.
Mounting the substrate on the support plate;
Examining a bead removal condition at an edge of the substrate seated on the support plate;
Examining the bead removal state
And photographing an edge of the substrate seated on the support plate to obtain a first image of the substrate and inspecting the obtained first image.
And after inspecting the bead removal state, exposing an edge of the substrate seated on the support plate.
And after the exposing the edge of the substrate, inspecting an edge exposure state of the substrate seated on the support plate.
Examining the edge exposure state
And photographing the substrate seated on the support plate to obtain a second image of the substrate different from the first image, and inspecting the obtained second image.
A support plate for supporting the substrate;
An eccentric detector for measuring an eccentricity of the substrate placed on the support plate;
An imaging member which acquires a first image from an edge of the substrate placed on the support plate;
An ultraviolet irradiation member for irradiating ultraviolet rays to the edge of the substrate; And
And an image processor configured to receive the first image obtained from the image pickup member and detect a width of the bead removal region.
And the imaging member acquires the first image discontinuously from the edge of the substrate when the substrate is rotated.
The eccentric detection unit uses a charge coupler device (CCD),
And an area camera for photographing the area by an area scan method.
An index unit having a load port and an index robot on which a container containing a substrate is placed;
A process processing unit connected to the indix unit and having a coating processing unit for applying a photoresist on a substrate, and a developing unit for developing the substrate after the exposure process;
An interface unit for transferring the substrate between the exposure apparatus on which the exposure process on the substrate is performed and the process processor; And
And an edge exposure unit for inspecting the edge exposure processing of the substrate and the bead removal state of the substrate edge.
The edge exposure unit
The substrate processing apparatus, characterized in that provided in the interface unit or the processing unit.
The edge exposure unit
A support plate for supporting the substrate;
An eccentric detector for measuring an eccentricity of the substrate placed on the support plate;
An imaging member which acquires a first image from an edge of the substrate placed on the support plate;
An ultraviolet irradiation member for irradiating ultraviolet rays to the edge of the substrate; And
And an image processor configured to receive the first image acquired from the image pickup member and detect a width of the bead removal region.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210227232.1A CN102856224B (en) | 2011-06-30 | 2012-06-29 | The processing method of wafer edge portion and device |
US13/537,861 US20130005056A1 (en) | 2011-06-30 | 2012-06-29 | Method and apparatus for processing wafer edge portion |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR20110064991 | 2011-06-30 | ||
KR1020110064991 | 2011-06-30 |
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KR20130007392A true KR20130007392A (en) | 2013-01-18 |
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KR1020110101702A KR20130007392A (en) | 2011-06-30 | 2011-10-06 | Apparatus and method for edge processing of wafe |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190024373A (en) * | 2017-08-31 | 2019-03-08 | 유민상 | Apparatus for exposing edge of display glass and wafer |
CN111223796A (en) * | 2018-11-23 | 2020-06-02 | 细美事有限公司 | Substrate processing apparatus, and apparatus and method for eccentricity inspection |
KR20220097142A (en) | 2020-12-31 | 2022-07-07 | 세메스 주식회사 | Wafer inspection apparatus |
KR20220097141A (en) | 2020-12-31 | 2022-07-07 | 세메스 주식회사 | Wafer inspection apparatus |
-
2011
- 2011-10-06 KR KR1020110101702A patent/KR20130007392A/en not_active Application Discontinuation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190024373A (en) * | 2017-08-31 | 2019-03-08 | 유민상 | Apparatus for exposing edge of display glass and wafer |
CN111223796A (en) * | 2018-11-23 | 2020-06-02 | 细美事有限公司 | Substrate processing apparatus, and apparatus and method for eccentricity inspection |
CN111223796B (en) * | 2018-11-23 | 2023-10-27 | 细美事有限公司 | Substrate processing apparatus, and apparatus and method for eccentric inspection |
KR20220097142A (en) | 2020-12-31 | 2022-07-07 | 세메스 주식회사 | Wafer inspection apparatus |
KR20220097141A (en) | 2020-12-31 | 2022-07-07 | 세메스 주식회사 | Wafer inspection apparatus |
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