KR20130006650A - 레이저 산출 플라즈마 ｅｕｖ 광원 - Google Patents

레이저 산출 플라즈마 ｅｕｖ 광원 Download PDF

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Publication number
KR20130006650A
KR20130006650A KR1020127026406A KR20127026406A KR20130006650A KR 20130006650 A KR20130006650 A KR 20130006650A KR 1020127026406 A KR1020127026406 A KR 1020127026406A KR 20127026406 A KR20127026406 A KR 20127026406A KR 20130006650 A KR20130006650 A KR 20130006650A
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KR
South Korea
Prior art keywords
droplet
droplets
waveform
disturbance
frequency
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Ceased
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KR1020127026406A
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English (en)
Korean (ko)
Inventor
게오르기 오. 바스첸코
알렉산더 아이. 어쇼프
리차드 엘. 샌드스트롬
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사이머 인코포레이티드
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Publication of KR20130006650A publication Critical patent/KR20130006650A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020127026406A 2010-03-10 2011-03-01 레이저 산출 플라즈마 ｅｕｖ 광원 Ceased KR20130006650A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/721,317 US8158960B2 (en) 2007-07-13 2010-03-10 Laser produced plasma EUV light source
US12/721,317 2010-03-10
PCT/US2011/000374 WO2011112235A1 (en) 2010-03-10 2011-03-01 Laser produced plasma euv light source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177015321A Division KR101887104B1 (ko) 2010-03-10 2011-03-01 레이저 산출 플라즈마 ｅｕｖ 광원

Publications (1)

Publication Number Publication Date
KR20130006650A true KR20130006650A (ko) 2013-01-17

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ID=44563770

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127026406A Ceased KR20130006650A (ko) 2010-03-10 2011-03-01 레이저 산출 플라즈마 ｅｕｖ 광원
KR1020177015321A Active KR101887104B1 (ko) 2010-03-10 2011-03-01 레이저 산출 플라즈마 ｅｕｖ 광원

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KR1020177015321A Active KR101887104B1 (ko) 2010-03-10 2011-03-01 레이저 산출 플라즈마 ｅｕｖ 광원

Country Status (7)

Country Link
US (1) US8158960B2 (https=)
EP (1) EP2544766B1 (https=)
JP (2) JP6403362B2 (https=)
KR (2) KR20130006650A (https=)
CN (1) CN102791331B (https=)
TW (1) TWI479955B (https=)
WO (1) WO2011112235A1 (https=)

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JP7699037B2 (ja) 2021-11-11 2025-06-26 ギガフォトン株式会社 Ｅｕｖ光生成装置、電子デバイス製造方法、及び検査方法
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Also Published As

Publication number Publication date
EP2544766B1 (en) 2017-08-02
TWI479955B (zh) 2015-04-01
EP2544766A4 (en) 2016-01-27
KR20170066704A (ko) 2017-06-14
WO2011112235A1 (en) 2011-09-15
JP2018041110A (ja) 2018-03-15
US20100294953A1 (en) 2010-11-25
EP2544766A1 (en) 2013-01-16
JP2013522823A (ja) 2013-06-13
US8158960B2 (en) 2012-04-17
TW201143538A (en) 2011-12-01
CN102791331A (zh) 2012-11-21
KR101887104B1 (ko) 2018-08-09
CN102791331B (zh) 2016-02-17
JP6557716B2 (ja) 2019-08-07
JP6403362B2 (ja) 2018-10-10

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