KR20120137178A - The light emitting device package and the method for manufacturing the same - Google Patents
The light emitting device package and the method for manufacturing the same Download PDFInfo
- Publication number
- KR20120137178A KR20120137178A KR1020110056539A KR20110056539A KR20120137178A KR 20120137178 A KR20120137178 A KR 20120137178A KR 1020110056539 A KR1020110056539 A KR 1020110056539A KR 20110056539 A KR20110056539 A KR 20110056539A KR 20120137178 A KR20120137178 A KR 20120137178A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- semiconductor layer
- pad
- conductive semiconductor
- emitting structure
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910000679 solder Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims description 101
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 151
- 239000002019 doping agent Substances 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- -1 TMGa (or TEGa) Substances 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a light emitting device package, which package exposes a light emitting structure, a device pad on a bottom surface of the light emitting structure, a solder paste on the device pad, a metal protrusion on the solder paste, and an upper portion of the metal protrusion to a predetermined height. And an insulating substrate covering the device pads. Therefore, the pad may be formed on the light emitting structure, the metal protrusion may be formed on the pad, and the upper surface of the metal protrusion may be used as a pad of the substrate to solve the alignment problem, and the pad adhesion problem may be solved.
Description
The present invention relates to a light emitting device package and a method of manufacturing the same.
A light emitting diode (LED) may form a light emitting source using compound semiconductor materials such as GaAs series, AlGaAs series, GaN series, InGaN series, and InGaAlP series.
Such a light emitting diode is packaged and used as a light emitting device that emits a variety of colors, and the light emitting device is used as a light source in various fields such as a lighting indicator for displaying a color, a character display, and an image display.
1 is a cross-sectional view of a conventional light emitting device package.
Referring to FIG. 1, a conventional light
In this case, an
In the light emitting device package of FIG. 1, when the
However, when printing, the
The embodiment provides a light emitting device package having a new structure and a method of manufacturing the same.
In an embodiment, a light emitting structure, a device pad on a lower surface of the light emitting structure, a solder paste on the device pad, a metal protrusion on the solder paste, and an insulating substrate covering the device pad and exposing an upper portion of the metal protrusion to a predetermined height. Include.
The embodiment may include forming a light emitting structure having an active layer between first and second conductive semiconductor layers on a substrate, forming a device pad on the light emitting structure, applying solder paste on the device pad, and soldering a metal protrusion. And applying an insulating material on the light emitting structure such that the top surface of the metal protrusion protrudes.
According to the present invention, a pad may be formed on the light emitting structure, a metal protrusion may be formed on the pad, and an alignment problem may be solved by using the upper surface of the metal protrusion as a pad of the substrate, and the pad adhesion problem may be solved.
In addition, since the pad is not formed by a separate process, cost and time are reduced.
1 is a cross-sectional view of a conventional light emitting device package.
2 is a cross-sectional view of a light emitting device package according to the present invention.
3 to 7 are process diagrams for describing a method of manufacturing the light emitting device package illustrated in FIG. 2.
8 is a cross-sectional view of a light emitting device package according to another embodiment of the present invention.
DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
Throughout the specification, when a part is said to "include" a certain component, it means that it can further include other components, without excluding other components unless specifically stated otherwise.
In order to clearly illustrate the present invention in the drawings, thicknesses are enlarged in order to clearly illustrate various layers and regions, and parts not related to the description are omitted, and like parts are denoted by similar reference numerals throughout the specification .
Whenever a portion of a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case where it is "directly on" another portion, but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.
Hereinafter, a light
Referring to FIG. 2, the light
The
The
The lower second
The second
The second
The second conductivity-
The
A second conductive cladding layer (not shown) may be formed between the second
The first conductivity
The first
In addition, the second conductivity-
Meanwhile, a step in which a portion of the first
The
The
When the
The
In this case, the heights of the device pads 160 on the first
That is, in order to compensate for the height difference between the first and second conductivity-
Preferably, the
The
The
Final heights of the
The
Preferably, the
An insulating
The insulating
Since the height of the insulating
A protective layer may be further formed on the upper portion of the light emitting
As such, when the mounting printed circuit board is formed after forming the light emitting device, the
Therefore, process time and cost for forming the substrate pad are reduced, and alignment errors between the light emitting device and the printed circuit board do not occur, thereby improving reliability.
Hereinafter, a method of manufacturing the light emitting
First, as shown in FIG. 3, the
The
The first conductivity
The first
The first conductivity type semiconductor material having a composition formula of the
In addition, when the first conductivity-
The
A clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the
The second conductivity
Meanwhile, p-type and n-type dopants may be doped into the first conductivity-
The first
Next, as shown in FIG. 3, the first
Accordingly, the
Next, as shown in FIG. 4, the
The
In this case, the
The
The
Next, as shown in FIG. 6, a
For example, when the
When the two solder pastes 181 are formed to be spaced apart as described above, the metals may be prevented from contacting and shorting while flowing by the soldering.
In this case, the
The
The thickness of the
Next, as shown in FIG. 7, the insulating
The insulating
The insulating material is coated on the
Thus, the exposed
Finally, the
In this case, a protective layer may be further formed on the
Hereinafter, another embodiment of the present invention will be described with reference to FIG. 8.
Referring to FIG. 8, the light emitting
The
The
Since the
A step is formed in the lower portion of the
The
In this case, the heights of the
That is, in order to compensate for the height difference between the first and second conductivity-type semiconductor layers 120 and 140, the first to the second pads forming the
The
The final heights of the
The
Preferably, the
An insulating
The insulating
Since the height of the insulating
A protective layer may be further formed on an upper surface of the light emitting
In the above description, the thicknesses of the
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.
Light emitting
Light-emitting
Claims (15)
An element pad on a bottom surface of the light emitting structure,
A metal protrusion on the device pad, and
An insulator substrate exposing the upper portion of the metal protrusion to a predetermined height and covering the device pad
Emitting device package.
The light emitting structure
A first conductivity type semiconductor layer on an upper surface of the light emitting structure,
A second conductive semiconductor layer on a lower surface of the light emitting structure, and
An active layer between the first and second conductivity-type semiconductor layers
Light emitting device package.
The lower surface of the light emitting structure
A first surface to which the second conductive semiconductor layer is exposed, and
A light emitting device package having a second surface exposing the first conductive semiconductor layer.
The device pads are formed on the first surface and the second surface, respectively.
Light emitting device package further comprising a solder paste on the device pad.
The solder paste is formed on only a portion of the device pad.
The exposed light emitting device package of the metal protrusion is a substrate pad on the insulating layer.
The metal protrusion is a light emitting device package having a columnar shape.
The metal protrusion is a light emitting device package having a spherical shape.
Forming a device pad on the light emitting structure,
Applying solder paste on the device pads and soldering metal projections; and
Applying an insulating material on the light emitting structure such that the top surface of the metal protrusion protrudes
Method of manufacturing a light emitting device package comprising a.
Forming the light emitting structure,
And etching the portion of the second conductive semiconductor layer to expose the first conductive semiconductor layer.
And manufacturing the device pads on the second conductive semiconductor layer and the first conductive semiconductor layer, respectively.
The metal protrusion is a method of manufacturing a light emitting device package having a columnar shape.
The metal protrusion is a method of manufacturing a light emitting device package having a columnar shape.
The metal protrusion is a method of manufacturing a light emitting device package formed of an alloy containing copper.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110056539A KR20120137178A (en) | 2011-06-10 | 2011-06-10 | The light emitting device package and the method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110056539A KR20120137178A (en) | 2011-06-10 | 2011-06-10 | The light emitting device package and the method for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120137178A true KR20120137178A (en) | 2012-12-20 |
Family
ID=47904411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110056539A KR20120137178A (en) | 2011-06-10 | 2011-06-10 | The light emitting device package and the method for manufacturing the same |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20120137178A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158842A (en) * | 2016-08-24 | 2016-11-23 | 厦门忠信达工贸有限公司 | Formal dress chip-scale white light LEDs filament light sources and method for packing thereof |
-
2011
- 2011-06-10 KR KR1020110056539A patent/KR20120137178A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158842A (en) * | 2016-08-24 | 2016-11-23 | 厦门忠信达工贸有限公司 | Formal dress chip-scale white light LEDs filament light sources and method for packing thereof |
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E902 | Notification of reason for refusal | ||
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