KR20120134327A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20120134327A
KR20120134327A KR1020110053167A KR20110053167A KR20120134327A KR 20120134327 A KR20120134327 A KR 20120134327A KR 1020110053167 A KR1020110053167 A KR 1020110053167A KR 20110053167 A KR20110053167 A KR 20110053167A KR 20120134327 A KR20120134327 A KR 20120134327A
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KR
South Korea
Prior art keywords
layer
light emitting
electrode
region
emitting device
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KR1020110053167A
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Korean (ko)
Inventor
정환희
김소정
김현주
이대희
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엘지이노텍 주식회사
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Priority to KR1020110053167A priority Critical patent/KR20120134327A/en
Publication of KR20120134327A publication Critical patent/KR20120134327A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

PURPOSE: A light emitting device is provided to improve light transmittance by including a light emitting structure with first and second conductive semiconductor layers, and an active layer. CONSTITUTION: A light emitting structure(160) includes a first conductive semiconductor layer(166), an active layer(164), and a second conductive semiconductor layer(162). A first electrode is formed on the light emitting structure. The first electrode is in contact with the first conductive semiconductor layer. A second electrode is formed under the light emitting structure. The second electrode is in contact with the second conductive semiconductor layer.

Description

Light emitting device

An embodiment of the present invention relates to a light emitting device.

A light emitting diode (LED) is a kind of semiconductor device that transmits and receives a signal by converting electricity into infrared light or light using characteristics of a compound semiconductor.

Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties.

These light emitting diodes do not contain environmentally harmful substances such as mercury (Hg) used in existing lighting equipment such as incandescent lamps and fluorescent lamps, and thus have excellent eco-friendliness and have advantages such as long life and low power consumption. It is replacing them.

The embodiment provides a light emitting device capable of improving luminous efficiency.

The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; A first electrode formed on the light emitting structure and in contact with the first conductive semiconductor layer; And a second electrode formed under the light emitting structure and in contact with the second conductive semiconductor layer. The first electrode includes a first region having a light transmittance of 50% or more, and a second region having a light transmittance of less than 50%.

In addition, the thickness of the first region is 10 to 1000 nm.

In addition, the first region may include at least one of ITO, AZO, InO X , and Zn.

In addition, the first electrode is disposed in a checkerboard shape on the light emitting structure.

The first region may include an upper layer and a lower layer, and the lower layer is in ohmic contact with the first conductive semiconductor layer.

In addition, the lower layer includes at least one of Cr, Ti, Al, V, W.

In addition, the thickness of the lower layer is 0.2 to 20nm.

In addition, the second region includes an upper layer, an intermediate layer, and a lower layer, and the upper layer includes Au.

The intermediate layer may include any one of Ni, Cu, and Al, and the lower layer may be in ohmic contact with the first conductivity-type semiconductor layer.

In addition, the lower layer includes any one of Cr, V, W, and Ti.

In addition, all or part of the second region is formed as a pad portion.

The second electrode may include an ohmic layer in ohmic contact with the second conductivity-type semiconductor layer, and a reflective layer under the ohmic layer.

In addition, the ohmic layer includes one or more of In, Zn, Sn, Ni, Pt, and Ag.

In addition, the reflective layer includes one or more of In, Zn, Sn, Ni, Pt, Ag.

The second electrode may include a current blocking layer that contacts the second conductive semiconductor layer and the ohmic layer and vertically overlaps the first electrode and at least a portion of the region.

In addition, the second electrode includes a barrier layer under the reflective layer.

The second electrode may include a bonding layer below the barrier layer and a support member below the bonding layer.

In addition, a passivation layer disposed on the side of the light emitting structure; .

In addition, roughness is formed on an upper surface of the first conductivity-type semiconductor layer.

The light emitting device package of the embodiment includes a package body; The light emitting device provided on the package body; A lead frame provided in the package body and electrically connected to the light emitting device; And a resin layer surrounding the light emitting element; .

According to an embodiment, there is provided a light emitting device capable of improving luminous efficiency.

1 is a plan view illustrating a light emitting device according to an embodiment.
FIG. 2 is a cross-sectional view of the light emitting device illustrated in FIG. 1 taken along the AA ′ direction.
3A to 3F illustrate an embodiment in which a first region and a second region are formed in a first electrode of the light emitting device of FIG. 1.
4 is a cross-sectional view showing a light emitting device according to another embodiment.
5 shows a light emitting device package according to an embodiment.
6 is a view showing an embodiment of a lighting device having a light emitting module.

Preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the above embodiments, each layer (region), region, pattern or structures may be "on" or "under" the substrate, each layer (layer), region, pad or pattern. When described as being formed, "on" and "under" include both being formed "directly" or "indirectly". In addition, the criteria for above or below each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a plan view illustrating a light emitting device according to an embodiment. FIG. 2 is a cross-sectional view of the light emitting device illustrated in FIG. 1 taken along the AA ′ direction.

The light emitting device 100 includes a LED using a plurality of compound semiconductor layers, for example, a compound semiconductor layer of Group 3-5 elements, and the LED is a colored LED or a UV LED that emits light such as blue, green, or red. Can be. The emitted light of the LED may be implemented using various semiconductors, but is not limited thereto.

Referring to FIG. 2, the light emitting device 100 may include a support assembly 110, a bonding layer 120, a barrier layer 130, a reflector layer 140, and an ohmic layer. ohmic layer 150, a current blocking layer 155, a protective layer 157, a light emitting structure 160, and a first electrode 170.

The support member 110, the bonding layer 120, the barrier layer 130, the reflective layer 140, and the ohmic layer 150 may constitute a second electrode for supplying power to the light emitting structure 160.

The support member 110 may be a conductive member or an insulating member, and supports the light emitting structure 160. For example, the support member 110 may be made of a metal such as Mo, W, Ni, Cu, Si, or an insulating material such as Al 2 O 3 , SiO 2, or the like.

The bonding layer 120 is disposed between the support member 110 and the barrier layer 130. The bonding layer 120 allows the supporting member 110, which is a semiconductor layer, to be bonded to the barrier layer 130, which is a metal layer. For example, the bonding layer 120 may include at least one of In, Sn, Ag, Nb, Pd, Ni, Au, and Cu.

The barrier layer 130 prevents the metal ions of the bonding layer 120 from diffusing into the reflective layer 140 and the ohmic layer 150. For example, the barrier layer 130 includes at least one of Ni, Pt, Ti, W, V, Fe, and Mo, and may be a single layer or a multilayer.

The reflective layer 140 is disposed on the barrier layer 130. The reflective layer 140 reflects light incident from the light emitting structure 160, thereby improving light extraction efficiency of the light emitting device 100. For example, the reflective layer 140 may be formed of a metal including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf or an alloy thereof.

In addition, the reflective layer 140 may include a metal or an alloy, indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), It may be formed in a multi-layer using a transparent conductive material such as aluminum zinc oxide (AZO), antimony tin oxide (ATO). For example, the reflective layer 140 may be formed of IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, or the like. The reflective layer 140 is to increase the light extraction efficiency and does not have to be formed.

The ohmic layer 150 is disposed between the reflective layer 140 and the light emitting structure 160. The ohmic layer 150 is ohmic contacted to the light emitting structure 140, for example, the second conductive semiconductor layer 162, so that power is smoothly supplied from the second electrode to the light emitting structure 160.

For example, the ohmic layer 150 may include at least one of In, Zn, Sn, Ni, Pt, and Ag. In addition, the ohmic layer 150 may selectively use a light transmissive conductive layer and a metal. For example, the ohmic layer 150 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni, Ag, Ni / IrOx / Au, and Ni / IrOx / Au / It includes one or more of ITO and can be implemented in a single layer or multiple layers.

The ohmic layer 150 may be formed to facilitate the injection of a carrier into the light emitting structure 160, for example, the second conductive semiconductor layer 162. For example, the ohmic layer 150 may be omitted, and a material used as the reflective layer 140 may be selected as a material in ohmic contact with the second conductive semiconductor layer 162.

The current blocking layer 155 is disposed between the ohmic layer 150 and the light emitting structure 160. An upper surface of the current blocking layer 155 may contact the second conductive semiconductor layer 162, and a lower surface or side surface of the current blocking layer 155 may contact the ohmic layer 150.

The current blocking layer 155 may be disposed to vertically overlap the first electrode 170 with at least a portion of the region. The current blocking layer 155 may improve the luminous efficiency of the light emitting device 100 by alleviating a phenomenon in which current is concentrated to a specific portion of the light emitting structure 160.

The current blocking layer 155 is a material having a lower electrical conductivity than the reflective layer 140 or the ohmic layer 150, or a material forming Schottky contact with the second conductive semiconductor layer 162, or an electrical insulating layer. It may be a substance. For example, the current blocking layer 155 may include at least one of ZnO, SiO 2 , SiON, Si 3 N 4 , Al 2 O 3 , TiO 2 , Ti, Al, Cr.

The current blocking layer 155 may be formed between the reflective layer 140 and the ohmic layer 150. The current blocking layer 155 is intended to allow a wide spread of current in the light emitting structure 160, and is not required to be formed.

The protective layer 157 is disposed at the edge region of the ohmic layer 150. When the ohmic layer 150, the reflective layer 140, and the barrier layer 130 are not selectively formed, the protective layer 157 may include an edge region of the reflective layer 140, an edge region or bonding of the barrier layer 130. It may be disposed in the edge region of the layer 120.

The protective layer 157 may reduce a phenomenon in which the interface between the light emitting structure 160 and the second electrode is peeled off, thereby reducing the reliability of the light emitting device 100. The protective layer 157 is a material having a lower electrical conductivity than the ohmic layer 150 or the reflective layer 140, or a material that forms a schottcky contact with the second conductive semiconductor layer 142, or an electrically insulating material. It can be formed as. For example, the protective layer 157 may be formed of ZnO, SiO 2 , Si 3 N 4 , TiOx, Al 2 O 3 , or the like. The protective layer 157 may be disposed to vertically overlap the first electrode 170 with at least a portion of the region.

The light emitting structure 160 is disposed on the ohmic layer 150 and the protective layer 157. Sides of the light emitting structure 160 may be formed to be inclined during an isolation etching process divided into unit chips. That is, the inclination of the side surface of the light emitting structure 160 may be greater than 0 ° and less than or equal to 90 ° based on the support member 110.

At least a portion of the light emitting structure 160 may vertically overlap the protective layer 157. In addition, a portion of the top surface of the protective layer 157 may be exposed by isolation etching.

The light emitting structure 160 may include compound semiconductor layers of a plurality of Group 3 to 5 elements. The light emitting structure 160 may include a first conductive semiconductor layer 166, an active layer 164 under the first conductive semiconductor layer 166, and a second conductive semiconductor layer 162 under the active layer 164. ) May be included. That is, the light emitting structure 160 includes the second conductive semiconductor layer 162, the active layer 164, and the first conductive semiconductor layer 166 sequentially stacked on the ohmic layer 150 and the protective layer 157. It may include.

The second conductive semiconductor layer 162 may be disposed on the ohmic layer 150 and the protective layer 157, and may be a compound semiconductor of a group III-V group element doped with the second conductive dopant. A second conductive semiconductor layer 162 may include semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) can do. The second conductive semiconductor layer 162 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like, and Mg, Zn, Ca, and Sr. P-type dopants, such as Ba, may be doped.

The active layer 164 is disposed on the second conductivity type semiconductor layer 162, and electrons and holes provided from the second conductivity type semiconductor layer 162 and the first conductivity type semiconductor layer 166. Light may be generated by energy generated during the recombination process of. The active layer 164 may include semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The active layer 164 may include any one of a single quantum well structure, a multiple quantum well structure (MQW), a quantum dot structure, or a quantum line structure.

The first conductivity type semiconductor layer 166 may be disposed on the active layer 164 and may be a compound semiconductor of a group III-V group element doped with the first conductivity type dopant. The first conductivity type semiconductor layer 166 may include a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). have. The first conductive semiconductor layer 166 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like, and Si, Ge, Sn, Se, and the like. N-type dopants such as Te and the like may be doped. The roughness pattern 166a may be formed on the top surface of the first conductivity-type semiconductor layer 166 to increase light extraction efficiency.

A conductive clad layer may be formed between the active layer 164 and the first conductive semiconductor layer 166, or between the active layer 164 and the second conductive semiconductor layer 162. The layer may be formed of an AlGaN-based semiconductor.

The first electrode 170 is disposed on the upper surface of the light emitting structure 160 to supply power to the first conductive semiconductor layer 166. The first electrode 170 may have a predetermined pattern shape. In addition, a roughness pattern (not shown) may be formed on the top surface of the first electrode 170 to increase light extraction efficiency.

1 and 2, the first electrode 170 forms a predetermined pattern on the first conductive semiconductor layer 166. The first electrode 170 may include the external electrodes 173a to 173d disposed along the upper edge of the first conductive semiconductor layer 166 and the internal electrodes 174a to 173d disposed inside the external electrodes 173a to 173d. 174c) and pad portions 175a and 175b. By combining the external electrodes 173a to 173d and the internal electrodes 174a to 174c, the first electrode 170 is disposed in a checkerboard shape as a whole. The external electrode, the internal electrode, and the pad portion are not limited to this embodiment.

The external electrodes 173a to 173d may be disposed in a quadrangular shape having four sides along the periphery of the first conductivity type semiconductor layer 166. The internal electrodes 174a to 174c may be disposed inside the external electrodes 173a to 173d to be connected to respective sides of the external electrodes 173a to 173d. The internal electrodes 174a to 174c may divide the space formed by the external electrodes 173a to 173d into a plurality of compartments, and the width of each compartment may be the same or different. The internal electrodes 174a to 174c and the external electrodes 173a to 173d improve current spreading characteristics.

Pad portions 175a and 175b may be disposed on the external electrodes 173a to 173d. For example, the pad parts 175a and 175b may be disposed at vertices of a quadrangle formed by the external electrodes 173a to 173d. The pad portions 175a and 175b are connected to a wire for supplying power.

Since the first electrode 170 is disposed on the first conductive semiconductor layer 166, light emitted from the active layer 164 passes through the first electrode 170 via the first conductive semiconductor layer 166. Can come out. However, the conventional first electrode is made of a material having a low light transmittance, so that light emitted from the active layer does not escape through the first electrode but is absorbed by the first electrode, causing a decrease in luminous efficiency.

In the present embodiment, a part of the first electrode 170 is made of a material having excellent light transmittance. To this end, the first electrode 170 may include a first region 171 having a light transmittance of 50% or more and a second region 172 having a light transmittance of less than 50%.

The thickness of the first region 171 may be 10 to 1000 μm. The first region 171 may include at least one of a conductive material such as indium tin oxide (ITO), aluminum zinc oxide (AZO), InO X , and Zn having a light transmittance of 50% or more. .

The second region 172 may be formed of a conductive material having a light transmittance of less than 50%, for example, Au.

The first region 171 may be formed except for a portion where the pad portions 175a and 175b are formed in the first electrode 170. The pad portions 175a and 175b are portions to which wires for supplying power are connected and are formed of a material having a light transmittance of 50% or less. In the first electrode 170, the ratio of the first region 171 and the second region 172 may be appropriately determined as necessary.

3A to 3F illustrate an embodiment in which a first region and a second region are formed in a first electrode of the light emitting device of FIG. 1. The first electrode 170 may be formed in the light emitting device in various embodiments, and the ratio of the first region 171 may be selected among the first electrodes 170.

2 and 3A, portions of the first electrode 170 except for the pad portions 175a and 175b may be formed as the first region 171. That is, the first region 171 may be the entire external electrodes 173a to 173d and the internal electrodes 174a to 174c except for the pad parts 175a and 175b. In this case, the pad portions 175a and 175b become the second region 172.

2 and 3B, portions of the first electrode 170 except for the pad parts 175a and 175b and the upper external electrode 173b may be formed as the first region 171. That is, the first region 171 becomes portions of the external electrodes 173a, 173c, and 173d and the internal electrodes 174a to 174c on the left side, the right side, and the bottom side. In this case, the second region 172 becomes the pad portions 175a and 175b and the upper external electrode 173b.

2 and 3C, portions of the first electrode 170 except for the pad parts 175a and 175b and the upper and left external electrodes 173a and 173b may be formed as the first region 171. . That is, the first region 171 becomes portions of the right and lower external electrodes 173c and 173d and the internal electrodes 174a to 174c. In this case, the second region 172 becomes pad portions 175a and 175b and upper and left external electrodes 173a and 173b.

2 and 3D, portions of the first electrode 170 except for the pad portions 175a and 175b and the external electrodes 173a, 173b and 173c on the upper side, the left side and the right side are the first region 171. Can be formed. That is, the first region 171 becomes a portion of the lower external electrode 173d and the internal electrodes 174a to 174c. In this case, the second region 172 becomes the pad portions 175a and 175b and portions of the external electrodes 173a, 173b, and 173c on the upper, left, and right sides.

2 and 3E, portions of the first electrode 170 except for the pad portions 175a and 175b and the external electrodes 173a to 173d may be formed as the first region 171. That is, the first region 171 becomes a portion of the internal electrodes 174a to 174c. In this case, the second region 172 becomes the pad portions 175a and 175b and the external electrodes 173a to 173d.

2 and 3F, portions of the internal electrodes 174a and 174b on the left and right sides of the first electrode 170 may be formed as the first region 171. In this case, the second region 172 becomes the pad portions 175a and 175b, the external electrodes 173a to 173d, and the middle internal electrode 174c.

As described above, some of the first electrodes 170 of the light emitting device are formed as the first region 171 having the light transmittance of 50% or more. As such, since a portion of the first electrode 170 is formed as the first region 171, light emitted from the active layer 164 may be emitted to the outside without being absorbed through the first region 171. Therefore, the luminous efficiency of the light emitting element is improved. In addition, when the VF (operating voltage) is high, the second region 172 may be increased to increase spreading, thereby reducing VF.

4 is a cross-sectional view showing a light emitting device according to another embodiment. The same parts as those of the light emitting device shown in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted.

In the present embodiment, the first electrode 270 is disposed on the upper surface of the light emitting structure 160 to supply power to the first conductivity type semiconductor layer 166. The first electrode 270 may have a predetermined pattern shape. In addition, a roughness pattern (not shown) may be formed on the top surface of the first electrode 270 to increase light extraction efficiency.

The first electrode 270 may include a first region 271 having a light transmittance of 50% or more and a second region 272 having a light transmittance of less than 50%.

The first region 271 may include an upper layer 271a and a lower layer 271b. The upper layer 271a may include at least one of indium tin oxide (ITO), aluminum zinc oxide (AZO), InO X , and Zn. The lower layer 271b may be formed of a material in ohmic contact with the first conductivity-type semiconductor layer 166. The lower layer 271b may include at least one of Cr, Ti, Al, V, and W, for example. The entire thickness of the first region 271 may be 10 to 1000 μm. When the thickness of the lower layer 271b becomes thick, since the light transmittance of the first region 271 may decrease, the thickness of the lower layer 271b may be 0.2 to 20 nm.

The second region 272 may include an upper layer 272a, an intermediate layer 272b, and a lower layer 272c. For example, the upper layer 272a may be formed of a conductive material, for example, Au, and the intermediate layer 272b may include at least one of Ni, Cu, and Al. The lower layer 272c may be formed of a material in ohmic contact with the first conductivity-type semiconductor layer 166. The lower layer 272b may include, for example, at least one of Cr, V, W, and Ti.

The first region 271 may be formed except for a portion where the pad portion is formed in the first electrode 270. The pad part is a part to which a wire for supplying power is connected and is formed of a material having a light transmittance of 50% or less. In the first electrode 270, the ratio of the first region 271 and the second region 272 may be appropriately determined as necessary.

Meanwhile, a passivation layer 280 may be formed on the side surface of the light emitting structure 160 to electrically protect the light emitting structure 160. The passivation layer 280 may be in contact with one side of the first electrode 270. In addition, the passivation layer 280 may contact the upper surface of the protective layer 157. For example, the passivation layer 280 may be formed of SiO 2 , SiO X , SiO X N Y , Si 3 N 4 , Al 2 O 3 .

In the present embodiment, the first region 271 and the second region 272 constituting the first electrode 270 are formed of a plurality of layers, and the lower layers of the first region 271 and the second region 272 are formed. May be formed of a material in ohmic contact with the first conductivity-type semiconductor layer 166 to improve electrical characteristics of the first electrode 270.

5 shows a light emitting device package according to an embodiment.

The light emitting device package 300 includes a package body 310, lead frames 312 and 314, a light emitting device 320, a reflector 325, a wire 330, and a resin layer 340.

A cavity may be formed on an upper surface of the package body 310. The side wall of the cavity may be formed obliquely. The package body 310 may be formed of a substrate having good insulating or thermal conductivity, such as a silicon-based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN), or the like. It may have a structure in which a plurality of substrates are stacked. Embodiments are not limited to the material, structure, and shape of the package body 310.

The lead frames 312 and 314 are disposed in the package body 310 to be electrically separated from each other in consideration of heat dissipation or mounting of light emitting devices. The light emitting device 320 is electrically connected to the lead frames 312 and 314. The light emitting device 320 may be the light emitting device shown in the embodiment of FIGS. 1 to 4.

The reflective plate 325 is formed on the side wall of the cavity of the package body 310 to direct light emitted from the light emitting element in a predetermined direction. The reflector plate 325 is made of a light reflective material, and may be, for example, a metal coating or a metal flake.

The resin layer 340 surrounds the light emitting device 320 positioned in the cavity of the package body 310 to protect the light emitting device 320 from the external environment. The resin layer 340 may be made of a colorless transparent polymer resin material such as epoxy or silicon. The resin layer 340 may include a phosphor to change the wavelength of light emitted from the light emitting device 320.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package.

Yet another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a street lamp. .

6 is a view showing an embodiment of a lighting device having a light emitting module.

The lighting device may include a light emitting module 20 and a light guide 30 for guiding the emission directivity angle of the light emitted from the light emitting module 20.

The light emitting module 20 may include at least one light emitting device 22 provided on a printed circuit board (PCB) 21, and the plurality of light emitting devices 22 may include a printed circuit board 21. May be spaced apart). The light emitting device may be, for example, a light emitting diode (LED).

The light guide 30 focuses the light emitted from the light emitting module 20 so that the light guide 30 may be emitted through the opening with a predetermined direction angle, and may have a mirror surface on the inner surface. Here, the light emitting module 20 and the light guide may be installed spaced apart by a predetermined interval (d).

As described above, the lighting apparatus may be used as an illumination lamp that focuses a plurality of light emitting elements 22 to obtain light, and is particularly embedded in a ceiling or a wall of the building to expose the opening side of the light guide 30. It is available by purchase light (downlight).

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

110: support member 120: bonding layer
130: barrier layer 140: reflective layer
150: ohmic layer 155: current blocking layer
157: protective layer 160: light emitting structure
162: second conductive semiconductor layer 164: active layer
166: first conductive semiconductor layer 166a: roughness
170: first electrode 171: first region
172: second region 173a, 173b, 173c, 173d: external electrode
174a, 174b, 174c: internal electrodes 175a, 175b: pad portion
270: first electrode 271: first region
271a: upper layer 271b: lower layer
272: second region 272a: top layer
272b: middle layer 272c: lower layer
280: passivation layer 300: light emitting device package
310: package body 312, 314: lead frame
320: light emitting element 325: reflector
330 wire 340: filling material

Claims (20)

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A first electrode formed on the light emitting structure and in contact with the first conductive semiconductor layer; And
A second electrode formed under the light emitting structure and in contact with the second conductive semiconductor layer;
Including,
The first electrode includes a first region having a light transmittance of 50% or more and a second region having a light transmittance of less than 50%. The method of claim 1,
The thickness of the first region is 10 to 1000nm light emitting device. The method of claim 1,
The first region includes at least one of ITO, AZO, InO X and Zn. The method of claim 1,
The first electrode is a light emitting device disposed in the shape of a checkerboard on the light emitting structure. The method of claim 1,
The first region includes an upper layer and a lower layer,
The lower layer is in ohmic contact with the first conductivity type semiconductor layer. The method of claim 5,
The lower layer includes at least one of Cr, Ti, Al, V, W. The method of claim 5,
The lower layer has a thickness of 0.2 to 20nm. The method of claim 1,
The second region consists of an upper layer, an intermediate layer and a lower layer,
The upper layer is a light emitting device containing Au. 9. The method of claim 8,
The intermediate layer includes any one of Ni, Cu, and Al, and the lower layer is in ohmic contact with the first conductivity type semiconductor layer. 9. The method of claim 8,
The lower layer includes any one of Cr, V, W, Ti. The method of claim 1,
All or part of the second region is formed of a pad portion. The method of claim 1,
The second electrode includes an ohmic layer in ohmic contact with the second conductive semiconductor layer, and a reflective layer under the ohmic layer. The method of claim 12,
The ohmic layer includes at least one of In, Zn, Sn, Ni, Pt, Ag. The method of claim 12,
The reflective layer includes at least one of In, Zn, Sn, Ni, Pt, Ag. The method of claim 12,
The second electrode includes a current blocking layer in contact with the second conductivity type semiconductor layer and the ohmic layer and vertically overlapping at least a portion of the first electrode. 16. The method of claim 15,
The second electrode includes a barrier layer below the reflective layer. 17. The method of claim 16,
The second electrode includes a bonding layer below the barrier layer and a support member below the bonding layer. The method according to any one of claims 1 to 17,
A passivation layer disposed on a side of the light emitting structure;
Light emitting device further comprising. The method according to any one of claims 1 to 17,
A light emitting device having roughness formed on an upper surface of the first conductive semiconductor layer. Package body;
The light emitting device according to any one of claims 1 to 17 provided on the package body;
A lead frame provided in the package body and electrically connected to the light emitting device; And
A resin layer surrounding the light emitting element;
Emitting device package.
KR1020110053167A 2011-06-02 2011-06-02 Light emitting device KR20120134327A (en)

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