KR20120133077A - Detergent composition for flat panel display device - Google Patents
Detergent composition for flat panel display device Download PDFInfo
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- KR20120133077A KR20120133077A KR1020110051575A KR20110051575A KR20120133077A KR 20120133077 A KR20120133077 A KR 20120133077A KR 1020110051575 A KR1020110051575 A KR 1020110051575A KR 20110051575 A KR20110051575 A KR 20110051575A KR 20120133077 A KR20120133077 A KR 20120133077A
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- flat panel
- panel display
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- phosphate
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- 239000000203 mixture Substances 0.000 title claims abstract description 57
- 239000003599 detergent Substances 0.000 title claims description 4
- -1 glycolether compound Chemical class 0.000 claims abstract description 33
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 12
- 239000010452 phosphate Substances 0.000 claims abstract description 12
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 8
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 235000011187 glycerol Nutrition 0.000 claims abstract description 6
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 60
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 14
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 8
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 claims description 7
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 6
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 4
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 3
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 claims description 3
- RXPQRKFMDQNODS-UHFFFAOYSA-N tripropyl phosphate Chemical compound CCCOP(=O)(OCCC)OCCC RXPQRKFMDQNODS-UHFFFAOYSA-N 0.000 claims description 3
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 2
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
- KKUKTXOBAWVSHC-UHFFFAOYSA-N Dimethylphosphate Chemical compound COP(O)(=O)OC KKUKTXOBAWVSHC-UHFFFAOYSA-N 0.000 claims description 2
- UCQFCFPECQILOL-UHFFFAOYSA-N diethyl hydrogen phosphate Chemical compound CCOP(O)(=O)OCC UCQFCFPECQILOL-UHFFFAOYSA-N 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- ZJXZSIYSNXKHEA-UHFFFAOYSA-N ethyl dihydrogen phosphate Chemical compound CCOP(O)(O)=O ZJXZSIYSNXKHEA-UHFFFAOYSA-N 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- CAAULPUQFIIOTL-UHFFFAOYSA-N methyl dihydrogen phosphate Chemical compound COP(O)(O)=O CAAULPUQFIIOTL-UHFFFAOYSA-N 0.000 claims description 2
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 24
- 239000002245 particle Substances 0.000 abstract description 19
- 239000011521 glass Substances 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 abstract 2
- 231100001240 inorganic pollutant Toxicity 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 27
- 229910052802 copper Inorganic materials 0.000 description 27
- 239000000356 contaminant Substances 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 21
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000012459 cleaning agent Substances 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000809 air pollutant Substances 0.000 description 4
- 231100001243 air pollutant Toxicity 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000003852 triazoles Chemical class 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- QMLAXRXNTUYJMM-UHFFFAOYSA-N propane-1,2,3-triol;3-sulfanylpropane-1,2-diol Chemical compound OCC(O)CO.OCC(O)CS QMLAXRXNTUYJMM-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 150000005846 sugar alcohols Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/266—Esters or carbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
본 발명은 평판표시장치용 세정제 조성물에 관한 것이다. The present invention relates to a cleaning composition for a flat panel display device.
평판표시장치(flat panel display device)는, 반도체 디바이스와 같이, 성막, 노광, 에칭 등의 공정을 거쳐 제품이 제조된다. 하지만, 이러한 제조공정에 의해서, 기판 표면에 각종의 유기물이나 무기물 등의 크기가 1㎛ 이하인 매우 작은 파티클(Particle)로 인해, 부착 오염이 발생한다. 이러한 파티클이 부착한 채로, 다음의 공정 처리를 실시했을 경우, 막의 핀홀이나 피트, 배선의 단선이나 브릿지(Bridge)가 발생하여, 제품의 제조 수율이 저하된다.Flat panel display devices, like semiconductor devices, are manufactured through processes such as film formation, exposure, and etching. However, by such a manufacturing process, adhesion contamination occurs due to very small particles having various organic and inorganic substances having a size of 1 μm or less on the substrate surface. When the following process treatment is performed while these particles are attached, pinholes and pits of the film, disconnection and bridges of the wiring are generated, and the production yield of the product is reduced.
따라서, 오염물을 제거하기 위한 세정이 각 공정 간에 행해지고 있고, 이를 위한 세정제에 대해서도 많은 연구가 있었다. 대한민국 공개특허 제2008-0038161호에서는 유기아민, 유기포스폰산, 직쇄 당알코올 및 물로 구성된 반도체 소자용 박리제 조성물을 개시하고 있다. 하지만 상기 공개특허는 반도체 소자로 용도가 한정되어 있고, 구리 및 구리합금으로 이루어진 배선에 대한 방식능력이 없는 단점이 있다. 대한민국 공개특허 제2004-0035368호에서는 알칸올 아민, 유기용매, 킬레이트 화합물 및 물로 구성된 반도체 및 TFT-LCD용 세정제 조성물을 개시하고 있다. 하지만, 상기 공개특허는 유기오염물 및 파티클 제거력이 부족하고, 폴리하이드록시 벤젠계 킬레이트 화합물인 카테콜 또는 갈산 등으로 인해 장기간 사용시 석출 문제가 발생할 수 있다. 대한민국 공개특허 제2006-0127098호에서는 유기산 성분, 유기 알칼리 성분, 계면활성제 성분 및 물을 포함하는 반도체 디바이스용 기판의 세정제를 개시하고 있다. 하지만, 상기 공개특허의 세정제는 산성 범위의 용액이므로 세정 초기의 단계의 기본적 특성인 유기물이나 무기물 등의 크기가 1㎛ 이하의 매우 작은 파티클(Particle)에 대한 제거성이 불충분하다. 그리고, 구리배선에 대한 방식효과만 있는 단점이 있다.Therefore, cleaning to remove contaminants is performed between the respective processes, and much research has been conducted on cleaning agents for this purpose. Korean Patent Laid-Open No. 2008-0038161 discloses a release agent composition for a semiconductor device composed of organic amine, organic phosphonic acid, linear sugar alcohol and water. However, the disclosed patent is limited to the use as a semiconductor device, there is a disadvantage that there is no anticorrosive ability for the wiring made of copper and copper alloy. Korean Patent Laid-Open Publication No. 2004-0035368 discloses a cleaning composition for a semiconductor and a TFT-LCD composed of an alkanol amine, an organic solvent, a chelating compound, and water. However, the disclosed patent lacks the ability to remove organic contaminants and particles, and may cause precipitation problems during long-term use due to catechol or gallic acid, which are polyhydroxy benzene-based chelate compounds. Korean Patent Laid-Open Publication No. 2006-0127098 discloses a cleaning agent for a semiconductor device substrate comprising an organic acid component, an organic alkali component, a surfactant component, and water. However, since the cleaning agent of the published patent is an acidic solution, it is insufficient to remove particles of very small particles having a size of 1 μm or less, which is a basic characteristic of the initial stage of cleaning. And, there is a disadvantage that only the anticorrosive effect on the copper wiring.
본 발명의 목적은 유리기판, 전극 또는 배선 상에 존재하는 유무기 오염물 또는 파티클을 제거할 수 있는 평판표시장치용 세정제 조성물을 제공하는 것이다.An object of the present invention is to provide a cleaning composition for a flat panel display device capable of removing organic-inorganic contaminants or particles present on a glass substrate, an electrode or a wiring.
본 발명의 목적은 평판표시장치에 이용되는 구리를 포함하는 금속으로 이루어진 전극 또는 배선 등을 부식시키지 않으면서 세정효과를 발휘하는 평판표시장치용 세정제 조성물을 제공하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to provide a cleaning composition for a flat panel display device that exhibits a cleaning effect without corroding an electrode or wiring made of a metal containing copper used in the flat panel display device.
본 발명의 목적은 린스 문제가 발생하지 않고, 경제적이면서 친환경적인 평판표시장치용 세정제 조성물을 제공하는 것이다.An object of the present invention is to provide a cleaning composition for a flat panel display device, which is economical and environmentally friendly, without causing a rinse problem.
본 발명은 조성물 총 중량에 대하여, 4급 암모늄염 화합물 0.01~10중량%; 글리콜에테르 화합물 0.01~10중량%; 인산에스테르 화합물 0.01~10중량%; 글리세린 화합물 0.01~5중량%; 접촉각 저하제 0.01~1중량%; 및 물 잔량을 포함하는 것을 특징으로 하는 평판표시장치용 세정제 조성물을 제공한다.The present invention is 0.01 to 10% by weight of the quaternary ammonium salt compound based on the total weight of the composition; 0.01 to 10% by weight of a glycol ether compound; 0.01-10 weight% of a phosphate ester compound; 0.01 to 5% by weight glycerin compound; 0.01 to 1% by weight of a contact angle reducing agent; And it provides a cleaning composition for a flat panel display device comprising a residual amount of water.
본 발명의 평판표시장치용 세정제 조성물은 유리기판, 전극 또는 배선 상에 존재하는 유무기 오염물 또는 파티클을 제거할 수 있다. 본 발명의 평판표시장치용 세정제 조성물은 평판표시장치에 이용되는 구리를 포함하는 금속으로 이루어진 전극 또는 배선 등을 부식시키지 않으면서 세정효과를 발휘할 수 있다. 본 발명의 평판표시장치용 세정제 조성물은 다량의 물을 사용함으로써 린스 문제가 발생할 가능성을 낮춘다. 그리고, 본 발명의 평판표시장치용 세정제 조성물은 경제적이고 친환경적이다.The cleaning composition for a flat panel display device of the present invention can remove organic-inorganic contaminants or particles present on a glass substrate, an electrode, or a wiring. The cleaning composition for a flat panel display device of the present invention can exert a cleaning effect without corroding an electrode or a wiring made of a metal containing copper used in the flat panel display device. The cleaning composition for a flat panel display device of the present invention lowers the possibility of rinsing problems by using a large amount of water. In addition, the cleaning composition for a flat panel display device of the present invention is economical and environmentally friendly.
도 1은 유기 오염물 중 유기 사인펜 자국으로 오염된 유리기판을 나타낸 사진이다.
도 2는 본 발명의 실시예4에 따른 세정제 조성물을 이용하여 유기 오염물 중 유기 사인펜 자국이 제거되는 결과를 나타내는 사진이다.
도 3은 유기 오염물 중 지문으로 오염된 구리기판을 나타낸 사진이다.
도 4는 본 발명의 실시예4에 따른 세정제 조성물을 이용하여 유기 오염물 중 지문오염성분이 제거되는 결과를 나타내는 사진이다.1 is a photograph showing a glass substrate contaminated with organic sign pen marks among organic contaminants.
Figure 2 is a photograph showing the result of removing the organic sign pen marks in the organic contaminants using the cleaning composition according to Example 4 of the present invention.
3 is a photograph showing a copper substrate contaminated with fingerprints among organic contaminants.
4 is a photograph showing a result of removing fingerprint contamination components from organic contaminants using the cleaning composition according to Example 4 of the present invention.
이하, 본 발명에 대해 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 평판표시장치용 세정제 조성물은 4급 암모늄염 화합물, 글리콜에테르 화합물, 인산에스테르 화합물, 글리세린 화합물, 접촉각 저하제 및 물을 포함한다.The cleaning composition for a flat panel display device of the present invention includes a quaternary ammonium salt compound, a glycol ether compound, a phosphate ester compound, a glycerin compound, a contact angle reducing agent and water.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 4급 암모늄염 화합물은 유무기 오염물 및 파티클에 대해 우수한 세정능력을 제공하고, 구리를 포함하는 금속으로 이루어진 전극 또는 배선에 대한 우수한 방식 능력을 제공한다.The quaternary ammonium salt compound included in the cleaning composition for a flat panel display device of the present invention provides excellent cleaning ability against organic-inorganic contaminants and particles, and provides excellent anticorrosion ability for an electrode or wiring made of a metal including copper.
상기 4급 암모늄염 화합물은 조성물 총 중량에 대하여, 0.01~10중량%로 포함되고, 0.05~5중량%로 포함되는 것이 바람직하다. 상술한 범위를 만족하면, 유무기 오염물 및 파티클에 대해 세정능력이 우수해지고, 구리를 포함하는 금속으로 이루어진 전극 또는 배선에 대한 방식 능력이 우수해진다.The quaternary ammonium salt compound is included in an amount of 0.01 to 10% by weight and 0.05 to 5% by weight based on the total weight of the composition. When the above-mentioned range is satisfied, the cleaning ability is excellent with respect to organic-inorganic contaminants and particles, and the anticorrosion ability with respect to the electrode or the wiring which consists of metal containing copper becomes excellent.
상기 4급 암모늄염 화합물은 테트라메틸암모늄 히드록시드(TMAH), 테트라에틸암모늄 히드록시드(TEAH), 테트라프로필암모늄 히드록시드(TPAH) 및 테트라부틸암모늄 히드록시드(TBAH)로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다.
The quaternary ammonium salt compound is selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH) and tetrabutylammonium hydroxide (TBAH) It is preferable that it is 1 type, or 2 or more types.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 글리콜에테르 화합물은 유무기 오염물과 파티클에 대한 용해력을 증가시키고, 경제적, 환경적으로 이점을 제공한다.The glycol ether compound included in the cleaning composition for a flat panel display device of the present invention increases the dissolving power to organic and inorganic contaminants and particles, and provides economic and environmental advantages.
상기 글리콜에테르 화합물은 조성물 총 중량에 대하여, 0.01~10중량%로 포함되고, 0.05~5중량%로 포함되는 것이 바람직하다. 상술한 범위를 만족하면, 유무기 오염물과 파티클에 대한 용해력이 증가되고, 세정 공정이 마무리된 후 세정제의 잔류 문제가 일어나지 않으며, 경제적, 환경적으로 이점을 제공할 수 있다.The glycol ether compound is preferably included in an amount of 0.01 to 10% by weight, and 0.05 to 5% by weight based on the total weight of the composition. When the above-mentioned range is satisfied, the dissolving power to organic-inorganic contaminants and particles is increased, and the problem of remaining of the cleaning agent does not occur after the cleaning process is completed, and economical and environmental benefits may be provided.
상기 글리콜에테르 화합물은 에틸렌글리콜모노부틸에테르(BG), 디에틸렌글리콜 모노메틸에테르(MDG), 디에틸렌글리콜 모노에틸에테르(carbitol), 디에틸렌글리콜 모노부틸에테르(BDG), 디프로필렌글리콜 모노메틸에테르(DPM), 디프로필렌글리콜 모노에틸에테르(MFDG), 트리에틸렌글리콜 모노부틸에테르(BTG), 트리에틸렌글리콜 모노에틸에테르(MTG) 및 프로필렌글리콜 모노메틸에테르(MFG)로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다.
The glycol ether compound is ethylene glycol monobutyl ether (BG), diethylene glycol monomethyl ether (MDG), diethylene glycol monoethyl ether (carbitol), diethylene glycol monobutyl ether (BDG), dipropylene glycol monomethyl ether (DPM), dipropylene glycol monoethyl ether (MFDG), triethylene glycol monobutyl ether (BTG), triethylene glycol monoethyl ether (MTG) and propylene glycol monomethyl ether (MFG) Or it is preferable that it is 2 or more types.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 인산에스테르 화합물은 양자성, 비양자성 용매의 공용매 역할로 작용하며, 기판 상에 위치하는 유기 오염물 및 유기 기인성 얼룩에 대한 우수한 세정효과를 제공한다. 그리고, 소량으로도 뛰어난 유기 오염물 제거능력을 갖는다.The phosphate ester compound included in the cleaning composition for a flat panel display device of the present invention functions as a cosolvent of proton and aprotic solvents, and provides an excellent cleaning effect on organic contaminants and organic-based stains on a substrate. And, even in a small amount, it has an excellent ability to remove organic contaminants.
상기 인산에스테르 화합물은 조성물 총 중량에 대하여, 0.01~10중량%로 포함되고, 0.05~5중량%로 포함되는 것이 바람직하다. 상술한 범위를 만족하면, 기판 상에 위치하는 유기 오염물 및 유기 기인성 얼룩에 대한 우수한 세정효과를 제공할 수 있다.It is preferable that the said phosphate ester compound is contained in 0.01 to 10 weight% with respect to the total weight of a composition, and is contained in 0.05 to 5 weight%. If the above-mentioned range is satisfied, it is possible to provide an excellent cleaning effect on organic contaminants and organic-based stains located on the substrate.
상기 인산에스테르 화합물은 하기 화학식 1로 표시되는 것이 바람직하다.It is preferable that the said phosphate ester compound is represented by following General formula (1).
<화학식 1>≪ Formula 1 >
상기 화학식 1에서, In Formula 1,
R1 내지 R3은 각각 독립적으로 수소원자, C1~C10의 직쇄 또는 분지쇄의 알킬기이다. 상기 알킬기는 바람직하게는 메틸기, 에틸기, 프로필기 또는 부틸기이다.R 1 to R 3 are each independently a hydrogen atom, a C 1 to C 10 linear or branched alkyl group. The alkyl group is preferably a methyl group, an ethyl group, a propyl group or a butyl group.
상기 화학식 1로 표시되는 인산에스테르 화합물의 예로는 메틸포스페이트, 디메틸포스페이트, 트리메틸포스페이트, 에틸포스페이트, 디에틸포스페이트, 트리에틸포스페이트, 트리프로필포스페이트 및 트리부틸포스페이트 등을 들 수 있다. Examples of the phosphate ester compound represented by Formula 1 include methyl phosphate, dimethyl phosphate, trimethyl phosphate, ethyl phosphate, diethyl phosphate, triethyl phosphate, tripropyl phosphate and tributyl phosphate.
상기 인산에스테르 화합물은 단독 또는 2종 이상을 혼합하여 이용할 수 있다.
The said phosphate ester compound can be used individually or in mixture of 2 or more types.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 글리세린 화합물은 구리를 포함하는 금속으로 이루어진 전극 또는 배선의 부식을 방지하고 유기 세정력을 향상시킨다.The glycerin compound included in the cleaning composition for a flat panel display device of the present invention prevents corrosion of an electrode or wiring made of a metal containing copper and improves organic cleaning power.
상기 글리세린 화합물은 조성물 총 중량에 대하여, 0.01~5중량%로 포함되고, 0.05~2중량%로 포함되는 것이 바람직하다. 상술한 범위를 만족하면, 유기 오염물에 대한 세정력 저하 없이 구리를 포함하는 금속으로 이루어진 전극 또는 배선에 대한 방식특성이 우수해진다.
The glycerin compound is contained in 0.01 to 5% by weight, and preferably contained in 0.05 to 2% by weight based on the total weight of the composition. When the above-mentioned range is satisfied, the anticorrosive property for the electrode or the wiring made of a metal containing copper is excellent without lowering the cleaning power for organic contaminants.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 접촉각 저하제는 세정공정 이후 기판의 친수성을 확보하기 위하여 포함되고, 구리를 포함하는 금속이 부식되는 것을 방지해준다.The contact angle reducing agent included in the cleaning composition for a flat panel display device of the present invention is included to secure the hydrophilicity of the substrate after the cleaning process, and prevents the metal including copper from corroding.
상기 접촉각 저하제는 조성물 총 중량에 대하여, 0.01~1중량%로 포함되고, 0.01~0.5중량%로 포함되는 것이 바람직하다. 상술한 범위를 만족하면, 세정공정 이후 기판의 친수성 확보가 보다 용이하고, 구리를 포함하는 금속으로 이루어진 전극 또는 배선에 대한 방식특성을 향상시킬 수 있다.The contact angle reducing agent is included in 0.01 to 1% by weight, preferably 0.01 to 0.5% by weight based on the total weight of the composition. If the above-described range is satisfied, it is easier to secure the hydrophilicity of the substrate after the cleaning process, and the anticorrosive characteristics of the electrode or the wiring made of a metal including copper can be improved.
상기 접촉각 저하제는 티오글리세린인 것이 바람직하다.
It is preferable that the said contact angle reducing agent is thioglycerine.
본 발명의 평판표시장치용 세정제 조성물에 포함되는 물은 조성물 총 중량이 100중량%가 되도록 잔량을 포함된다. 상기 물은 반도체 공정용을 사용하며, 바람직하게는 18㏁?㎝ 이상의 탈이온수를 사용한다.
The water contained in the cleaning composition for a flat panel display device of the present invention includes the remaining amount so that the total weight of the composition is 100% by weight. The water is used for the semiconductor process, preferably deionized water of 18 ㏁cm or more.
본 발명의 평판표시장치용 세정제 조성물은 트리아졸계 화합물을 이용하지 않고도 구리를 포함하는 금속으로 이루어진 전극 또는 배선에 방식능력을 부여할 수 있다. 상기 트리아졸계 화합물을 이용하면 방식능력은 우수하나 구리 표면에 상기 트리아졸계 화합물이 흡착되어 남겨지는 문제가 있으므로, 이용을 지양하는 것이 바람직하다.
The cleaning composition for a flat panel display device of the present invention can impart anticorrosion ability to an electrode or a wiring made of a metal containing copper without using a triazole-based compound. When the triazole-based compound is used, the anti-corrosion ability is excellent, but there is a problem that the triazole-based compound is adsorbed on the copper surface.
본 발명은 상기 평판표시장치용 세정제 조성물로 제조된 평판표시장치를 제공한다. 상기 평판표시장치의 예로는 유기전계발광소자, 액정디스플레이 등을 들 수 있다.
The present invention provides a flat panel display device made of the cleaning composition for the flat panel display device. Examples of the flat panel display include an organic light emitting display device and a liquid crystal display.
본 발명의 평판표시장치용 세정제 조성물은 유리기판, 전극 또는 배선 상에 존재하는 유무기 오염물 또는 파티클을 제거할 수 있다. 본 발명의 평판표시장치용 세정제 조성물은 평판표시장치에 이용되는 구리를 포함하는 금속으로 이루어진 전극 또는 배선 등을 부식시키지 않으면서 세정효과를 발휘할 수 있다. 본 발명의 평판표시장치용 세정제 조성물은 다량의 물을 사용함으로써 린스 문제가 발생할 가능성을 낮춘다. 그리고, 본 발명의 평판표시장치용 세정제 조성물은 경제적이고 친환경적이다.
The cleaning composition for a flat panel display device of the present invention can remove organic-inorganic contaminants or particles present on a glass substrate, an electrode, or a wiring. The cleaning composition for a flat panel display device of the present invention can exert a cleaning effect without corroding an electrode or a wiring made of a metal containing copper used in the flat panel display device. The cleaning composition for a flat panel display device of the present invention lowers the possibility of rinsing problems by using a large amount of water. In addition, the cleaning composition for a flat panel display device of the present invention is economical and environmentally friendly.
이하에서, 실시예 및 시험예를 통하여 본 발명을 더욱 상세하게 설명한다. 그러나, 본 발명의 범위가 하기의 실시예 및 시험예에 의하여 한정되는 것은 아니다.
Hereinafter, the present invention will be described in more detail with reference to Examples and Test Examples. However, the scope of the present invention is not limited by the following examples and test examples.
실시예1 내지 실시예12, 비교예1 내지 비교예5: 세정제 조성물의 제조Examples 1-12, Comparative Examples 1-5: Preparation of Cleaning Composition
교반기가 설치되어 있는 혼합조에 하기 표 1에 기재된 성분들을 표 1에 기재된 조성비에 따라 혼합하고, 상온에서 1시간 동안 500rpm의 속도로 교반하여 세정제 조성물을 제조하였다.In the mixing tank equipped with a stirrer, the components shown in Table 1 were mixed according to the composition ratios shown in Table 1, and stirred at a speed of 500 rpm for 1 hour at room temperature to prepare a cleaning composition.
TMAH: 테트라메틸암모늄 히드록시드 TEAH: 테트라에틸암모늄 히드록시드TMAH: tetramethylammonium hydroxide TEAH: tetraethylammonium hydroxide
BG: 에틸렌글리콜모노부틸에테르 MDG: 디에틸렌글리콜 모노메틸에테르BG: Ethylene Glycol Monobutyl Ether MDG: Diethylene Glycol Monomethyl Ether
BDG: 디에틸렌글리콜 모노부틸에테르 MTG: 트리에틸렌글리콜 모노에틸에테르BDG: diethylene glycol monobutyl ether MTG: triethylene glycol monoethyl ether
TMP: 트리메틸포스페이트 TBP: 트리부틸포스페이트TMP: trimethyl phosphate TBP: tributyl phosphate
TPP: 트리프로필포스페이트 TEP: 트리에틸포스페이트
TPP: Tripropyl Phosphate TEP: Triethyl Phosphate
시험예: 세정제 조성물의 특성 평가Test Example: Evaluation of Characteristics of Cleaning Composition
1) 구리 에칭 속도 평가1) copper etch rate evaluation
먼저 구리가 2500Å 두께로 형성된 유리기판을 실시예1 내지 실시예12 및 비교예1 내지 비교예5의 세정제 조성물에 30분간 침지시킨다. 이때 세정제의 온도는 25℃이며 구리 막의 두께를 침지시키기 이전 및 이후에 측정하고, 구리막의 용해속도를 구리막의 두께 변화로부터 계산하여 측정한다. 그 결과를 표 2에 기재하였다.
First, a glass substrate having a copper thickness of 2500 kV is immersed in the cleaning composition of Examples 1 to 12 and Comparative Examples 1 to 5 for 30 minutes. At this time, the temperature of the cleaning agent is 25 ℃ and is measured before and after immersing the thickness of the copper film, it is measured by calculating the dissolution rate of the copper film from the change in the thickness of the copper film. The results are shown in Table 2.
2) 오염물 제거력 평가-12) Contaminant Removability Evaluation-1
유기 오염물의 제거력 평가를 위해 2㎝ x 2㎝ 크기로 형성된 유리기판 및 구리기판 위에 유기성분 사인펜 및 지문으로 오염시키고, 오염된 기판을 스프레이식 기판 세정장치를 이용하여 1분 동안 25℃에서 실시예1 내지 실시예12 및 비교예1 내지 비교예5의 세정제 조성물로 세정하였다. 세정 후 초순수에 30초 세척한 후 질소로 건조하였다. In order to evaluate the removal power of organic contaminants, the glass substrate and the copper substrate formed of 2 cm x 2 cm were contaminated with organic sign pens and fingerprints. It washed with the cleaning composition of Examples 1-12 and Comparative Examples 1-5. After washing, it was washed with ultrapure water for 30 seconds and then dried with nitrogen.
※ 유기 사인펜의 제거 유무 평가기준(유기성분 사인펜 오염 후 24시간 대기 건조)※ Evaluation criteria for the removal of organic sign pens (drying for 24 hours after contamination with organic sign pens)
○: 제거가 되었을 때, X: 제거가 되지 않았을 때○: When removed, X: When not removed
※ 구리기판에 대한 지문의 제거 유무 평가 기준※ Evaluation criteria for removing fingerprints on copper substrate
10: 완벽히 제거가 되었을 때, 0: 제거가 되지 않았을 때
10: When completely removed, 0: When not removed
3) 오염물 제거력 평가-23) Pollutant removal power evaluation-2
또한, 구리기판을 대기 중에 24시간 방치하여 대기중의 각종 유기물, 무기물, 파티클 등에 오염시킨 후 스프레이식 구리기판 세정장치를 이용하여 1분 동안 25℃에서 실시예1 내지 실시예12 및 비교예1 내지 비교예5의 세정제 조성물으로 세정하였다. 세정 후 초순수에 30초 세척한 후 질소로 건조하였다. 상기 유리기판 위에 0.5㎕의 초순수 방울을 떨어뜨려 세정후의 접촉각을 측정하였다. 그 결과를 표 2에 나타내었다.
In addition, the copper substrate is left in the air for 24 hours to contaminate various organic substances, inorganic substances, particles, and the like in the air, and then, using a spray-type copper substrate cleaning apparatus, at a temperature of 25 ° C. for 1 minute, Examples 1 to 12 and Comparative Example 1 To the cleaning composition of Comparative Example 5. After washing for 30 seconds in ultrapure water and dried with nitrogen. 0.5 μl of ultrapure water was dropped on the glass substrate to measure the contact angle after washing. The results are shown in Table 2.
4) 파티클 제거력 평가4) Particle Removal
실시예1 내지 실시예12 및 비교예1 내지 비교예5의 세정제 조성물로 무기 파티클 솔루션으로 오염시킨 유리기판에 대한 세정을 실시하였다. 보다 상세하게 설명하면, 유리기판을 평균 입자 크기가 0.8㎛인 유기 파티클 솔루션으로 오염시키고 1분간 3000rpm으로 스핀(spin) 드라이한 후 스프레이식 유리 기판 세정장치를 이용하여 1분 동안 25℃에서 각각의 세정제로 세정하였다. 세정 후 초순수에 30초 세척한 후 질소로 건조하였다. 세정 전후의 파티클 수는 표면입자측정기(Topcon WM-1500)로 0.1㎛ 이상의 파티클 수를 측정하였고, 이를 표 2에 나타내었다.Cleaning was performed on the glass substrate contaminated with the inorganic particle solution with the cleaning agent compositions of Examples 1 to 12 and Comparative Examples 1 to 5. More specifically, the glass substrate was contaminated with an organic particle solution having an average particle size of 0.8 μm, spin dried at 3000 rpm for 1 minute, and then sprayed at 25 ° C. for 1 minute using a spray glass substrate cleaner. Washed with detergent. After washing, it was washed with ultrapure water for 30 seconds and then dried with nitrogen. The number of particles before and after cleaning was measured by a particle size measuring instrument (Topcon WM-1500) of 0.1 μm or more, which is shown in Table 2.
(Å/분)Cu etching rate
(Å / min)
사인펜abandonment
Signature pen
제거율(%)particle
Removal rate (%)
표 2를 참조하면, 본 발명에 따른 실시예1 내지 실시예12의 세정제 조성물은 구리에 대한 방식 성능이 우수하고, 유기사인펜, 대기 오염물에 대한 제거력도 우수한 것을 알 수 있다. Referring to Table 2, it can be seen that the cleaning composition of Examples 1 to 12 according to the present invention is excellent in anticorrosive performance for copper, and also excellent in removal ability against organic sine pen and air pollutant.
한편, 도 1은 유기 오염물 중 유기 사인펜 자국으로 오염된 유리기판을 나타낸 사진이다. 도 2는 본 발명의 실시예4에 따른 세정제 조성물을 이용하여 유기 오염물 중 유기 사인펜 자국이 제거되는 결과를 나타내는 사진이다. 도 3은 유기 오염물 중 지문으로 오염된 구리기판을 나타낸 사진이다. 도 4는 본 발명의 실시예4에 따른 세정제 조성물을 이용하여 유기 오염물 중 지문오염성분이 제거되는 결과를 나타내는 사진이다.On the other hand, Figure 1 is a photograph showing a glass substrate contaminated with organic sign pen marks of organic contaminants. Figure 2 is a photograph showing the result of removing the organic sign pen marks in the organic contaminants using the cleaning composition according to Example 4 of the present invention. 3 is a photograph showing a copper substrate contaminated with fingerprints among organic contaminants. 4 is a photograph showing a result of removing fingerprint contamination components from organic contaminants using the cleaning composition according to Example 4 of the present invention.
도 1 내지 도 4를 참조하면, 실시예4의 세정제 조성물을 이용하면, 유기 오염물에 대한 세정능력이 뛰어남을 알 수 있다.1 to 4, it can be seen that using the cleaning composition of Example 4, the cleaning ability against organic contaminants is excellent.
한편, 비교예1, 비교예2, 비교예3의 경우, 유기 사이펜, 지문오염, 대기오염물 등에 대한 세정력이 우수하지 못한 것을 알 수 있다. 비교예4의 경우, 구리에 대한 방식성능이 우수하지 못하고, 대기 오염물에 대한 세정력이 우수하지 못함을 알 수 있다. 그리고 비교예5의 경우, 구리에 대한 방식성능이 우수하지 못하고, 대기 오염물에 대한 제거력도 우수하지 못하였다.
On the other hand, in the case of Comparative Example 1, Comparative Example 2, Comparative Example 3, it can be seen that the cleaning power for organic siphon, fingerprint contamination, air pollutants and the like is not excellent. In the case of Comparative Example 4, it can be seen that the corrosion resistance to copper is not excellent, and the cleaning power to air pollutants is not excellent. In the case of Comparative Example 5, the anticorrosive performance against copper was not excellent, and the removal ability to air pollutants was also not excellent.
Claims (7)
4급 암모늄염 화합물 0.01~10중량%;
글리콜에테르 화합물 0.01~10중량%;
인산에스테르 화합물 0.01~10중량%;
글리세린 화합물 0.01~5중량%;
접촉각 저하제 0.01~1중량%; 및
물 잔량을 포함하는 것을 특징으로 하는 평판표시장치용 세정제 조성물.With respect to the total weight of the composition,
0.01-10% by weight of quaternary ammonium salt compound;
0.01 to 10% by weight of a glycol ether compound;
0.01-10 weight% of a phosphate ester compound;
0.01 to 5% by weight glycerin compound;
0.01 to 1% by weight of a contact angle reducing agent; And
Cleaning composition for a flat panel display comprising a residual amount of water.
상기 4급 암모늄염 화합물은 테트라메틸암모늄 히드록시드(TMAH), 테트라에틸암모늄 히드록시드(TEAH), 테트라프로필암모늄 히드록시드(TPAH) 및 테트라부틸암모늄 히드록시드(TBAH)로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 평판표시장치용 세정제 조성물.The method according to claim 1,
The quaternary ammonium salt compound is selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH) and tetrabutylammonium hydroxide (TBAH) The cleaning composition for a flat panel display device which is 1 type or 2 or more types.
상기 글리콜에테르 화합물은 에틸렌글리콜모노부틸에테르(BG), 디에틸렌글리콜 모노메틸에테르(MDG), 디에틸렌글리콜 모노에틸에테르(carbitol), 디에틸렌글리콜 모노부틸에테르(BDG), 디프로필렌글리콜 모노메틸에테르(DPM), 디프로필렌글리콜 모노에틸에테르(MFDG), 트리에틸렌글리콜 모노부틸에테르(BTG), 트리에틸렌글리콜 모노에틸에테르(MTG) 및 프로필렌글리콜 모노메틸에테르(MFG)로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 평판표시장치용 세정제 조성물.The method according to claim 1,
The glycol ether compound is ethylene glycol monobutyl ether (BG), diethylene glycol monomethyl ether (MDG), diethylene glycol monoethyl ether (carbitol), diethylene glycol monobutyl ether (BDG), dipropylene glycol monomethyl ether (DPM), dipropylene glycol monoethyl ether (MFDG), triethylene glycol monobutyl ether (BTG), triethylene glycol monoethyl ether (MTG) and propylene glycol monomethyl ether (MFG) Or two or more kinds of cleaning composition for a flat panel display device.
상기 인산에스테르 화합물은 하기 화학식 1로 표시되는 것을 특징으로 하는 평판표시장치용 세정제 조성물:
<화학식 1>
상기 화학식 1에서,
R1 내지 R3은 각각 독립적으로 수소원자, C1~C10의 직쇄 또는 분지쇄의 알킬기이다.The method according to claim 1,
The phosphate ester compound is a detergent composition for a flat panel display characterized in that represented by the formula (1):
≪ Formula 1 >
In Chemical Formula 1,
R 1 to R 3 are each independently a hydrogen atom, a C 1 to C 10 linear or branched alkyl group.
상기 인산에스테르 화합물은 메틸포스페이트, 디메틸포스페이트, 트리메틸포스페이트, 에틸포스페이트, 디에틸포스페이트, 트리에틸포스페이트, 트리프로필포스페이트 및 트리부틸포스페이트로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 평판표시장치용 세정제 조성물. The method of claim 4,
The phosphate ester compound is one or two or more selected from the group consisting of methyl phosphate, dimethyl phosphate, trimethyl phosphate, ethyl phosphate, diethyl phosphate, triethyl phosphate, tripropyl phosphate and tributyl phosphate Detergent composition for the device.
상기 접촉각 저하제는 티오글리세린인 것을 특징으로 하는 평판표시장치용 세정제 조성물.The method according to claim 1,
The contact angle reducing agent is a cleaning composition for a flat panel display, characterized in that thioglycerine.
A flat panel display comprising a cleaning composition for a flat panel display according to claim 1.
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KR20150096245A (en) * | 2014-02-14 | 2015-08-24 | 동우 화인켐 주식회사 | A composition for removing reactive mesogen-organic alignment layer |
KR20200041401A (en) * | 2018-10-11 | 2020-04-22 | 세메스 주식회사 | Substrate cleaning compositions, substrate cleaning method and substrate treating apparatus |
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US11004675B2 (en) | 2017-09-14 | 2021-05-11 | Semes Co., Ltd. | Substrate cleaning composition, substrate treating method, and substrate treating apparatus |
KR102152911B1 (en) * | 2017-09-14 | 2020-09-08 | 세메스 주식회사 | Anhydrous substrate cleaning compositions, substrate cleaning method and substrate treating apparatus |
CN109266463A (en) * | 2018-09-27 | 2019-01-25 | 镇江奥视达光学有限公司 | A kind of cleaning agent of concave lens and preparation method thereof |
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KR20150096245A (en) * | 2014-02-14 | 2015-08-24 | 동우 화인켐 주식회사 | A composition for removing reactive mesogen-organic alignment layer |
KR20200041401A (en) * | 2018-10-11 | 2020-04-22 | 세메스 주식회사 | Substrate cleaning compositions, substrate cleaning method and substrate treating apparatus |
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