KR20120130849A - A apparatus for seperating a wafer from a support - Google Patents

A apparatus for seperating a wafer from a support Download PDF

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Publication number
KR20120130849A
KR20120130849A KR1020110048871A KR20110048871A KR20120130849A KR 20120130849 A KR20120130849 A KR 20120130849A KR 1020110048871 A KR1020110048871 A KR 1020110048871A KR 20110048871 A KR20110048871 A KR 20110048871A KR 20120130849 A KR20120130849 A KR 20120130849A
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KR
South Korea
Prior art keywords
wafer
support
unit
heating
attached
Prior art date
Application number
KR1020110048871A
Other languages
Korean (ko)
Inventor
양형우
최희석
김범철
현승한
김인곤
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020110048871A priority Critical patent/KR20120130849A/en
Publication of KR20120130849A publication Critical patent/KR20120130849A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Abstract

PURPOSE: An apparatus for separating a supporter and a wafer is provided to reduce a wafer defect by automatically separating the supporter and the wafer from a support combination which is used for a polishing device. CONSTITUTION: A first port(112) stores a supporter to which a wafer is attached. An aligner(125) arranges the supporter which is transferred from the first port. A heating part heats up the supporter which is transferred from the aligner. A separate part(140) separates the wafer and the supporter which are transferred from the heating part. A supporter storing port transfers the separated supporter.

Description

A device for seperating a wafer from a support}

Embodiments relate to an apparatus for separating a wafer and a support from a wafer support assembly.

The grinding and polishing process for the wafer is a process for thinning the thickness of the wafer, maintaining the top view of the wafer, improving the accuracy of the wafer thickness, and reducing wafer defects.

Grinding process and polishing process can be largely divided into physical polishing and chemical polishing. Physical polishing is polishing a wafer by supplying a mixture of an abrasive or abrasive and a polishing solution on a polishing plate, and chemical polishing is polishing a wafer by dipping the wafer in a mixed polishing solution such as nitric acid, hydrogen peroxide, and hydrofluoric acid.

The grinding process and the polishing process can be performed by a polishing apparatus and a grinding apparatus. In order to grind or grind a wafer using a polishing apparatus or a grinding apparatus, a support capable of supporting the wafer is required, and the wafer is attached to the support. The polishing or grinding process may be performed by loading the support on which the wafer is attached to the polishing apparatus or the grinding apparatus. When the polishing or grinding process is completed, the wafer is generally separated from the support by hand.

Embodiments provide an apparatus for separating wafers and supports that can reduce wafer damage and improve mass production efficiency.

According to an embodiment, an apparatus for separating a wafer and a support includes a first port for storing a support on which a wafer is attached by an adhesive, an aligner for aligning a support on which a wafer transferred from the first port is attached, and a transfer from the aligner. A heating unit for heating the wafer-attached support, wherein the separation unit separates the wafer and the support from the support with the wafer transferred from the heating unit, a support storage port to which the separated support is transported, and the separated wafer is transported. And a wafer storage port.

The apparatus for separating the wafer and the support may transfer the support to which the wafer is attached from the first port to the alignment unit, from the alignment unit to the heating unit, or from the heating unit to the separation unit, or The separated support may further include a transfer unit transferring the separated support to the support storage port or the separated wafer to the wafer storage port.

The heating units are spaced apart from each other, the first heating plates for sequentially heating the support attached to the wafer conveyed from the aligner, and the support attached to the wafer conveyed from the aligner the first heating plates It may include a transfer rail for sequentially transporting the furnace.

The separation unit is loaded with a support to which the wafer transferred from the heating unit is attached, the second heating plate for heating the support to which the loaded wafer is attached, and the support from the support to which the loaded wafer is attached to the second heating plate. At least one fixing pin for fixing, and a vacuum chuck for adsorbing the wafer attached to the support fixed to the second heating plate, and moving the adsorbed wafer to separate from the support.

The apparatus for separating the wafer and the support may further include a wafer cleaner for cleaning the adhesive remaining on the wafer adsorbed by the vacuum chuck. The apparatus for separating the wafer and the support further includes a support cleaning unit including a cleaning loading unit in which the separated support is loaded, and a spray nozzle for spraying the cleaning liquid onto the loaded support to clean the remaining adhesive. The separated support may be transferred from the second heating plate to the cleaning loading portion.

The vacuum chuck is disposed apart from the body, the adsorption portion for adsorbing the wafer, and disposed between the body and the adsorption portion, and applied to the wafer adsorbed to the adsorption portion from the body when the wafer is adsorbed. It may include a shock buffer to mitigate the impact.

The vacuum chuck further includes a bearing portion disposed in the body and at least one fixing member for fixing the suction portion to the bearing portion, wherein the shock absorbing portion surrounds the fixing member, and one end contacts the body, and the other One end may be a spring structure in contact with the adsorption unit. The separation distance between the bearing portion and the shock buffer may be 90mm ~ 100mm.

Embodiments can reduce wafer damage and improve mass production efficiency.

1 shows an apparatus for separating a wafer and a support according to an embodiment.
2A to 2D illustrate a process of separating the wafer and the support by the separator shown in FIG. 1.
3 shows an enlarged view of the vacuum chuck shown in FIG. 1.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for above or below each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size. Hereinafter, an apparatus for separating a wafer and a support according to an embodiment will be described with reference to the accompanying drawings.

1 shows an apparatus 100 for separating a wafer and a support according to an embodiment.

Referring to FIG. 1, an apparatus 100 for separating a wafer and a support is an apparatus for automatically separating a wafer and a support from a wafer to which a wafer used in a polishing apparatus is attached.

The apparatus 100 for separating the wafer and the support 100 includes a body 110, first to third ports 112, 160, and 195, transfer parts 120, 130, 155, 170, 175, and 190, aligner 125, and heating part. (H1 to H3), separation unit 140, wafer cleaning unit 150, and support cleaning unit 180.

The body 110 includes first to third ports 112, 160, and 195, transfer parts 120, 130, 155, 170, 175, and 190, aligners 125, heating parts H1 to H3, and separation parts 140. , The wafer cleaner 150, and the second cleaners 180 and 185 are supported.

The first port 112 is disposed on the body 110 and stores a cassette for storing the support 101 to which the wafer 103 is attached. In other words, the cassette 101 stored in the first port 112 stores the support 101 to which the wafer 103 on which the polishing process is completed is attached.

The second port 160 is disposed on the body 110 spaced apart from the first port 112, and is a wafer storage port for storing a carrier for storing a separated wafer. The third port 190 is disposed on the body and spaced apart from the first port 112 and the second port 160, and is a support storage port for storing a carrier for storing the separated support.

The transfer units 120, 130, 155, 170, 175 and 190 are disposed on the body 110 and include transfer robots, and serve to transfer the support, wafer, or support to which the wafer is attached. The transfer part includes first to sixth transfer robots 120, 130, 155, 170, 175, and 190).

The first transfer robot 120 transfers the support 101 with the wafer 103 stored in the cassette stored in the first port 112 to the aligner 125.

For example, the first transfer robot 120 can include a robot arm 122 and a hand 124. The robot arm 122 has a lengthened or shortened structure, and the hand 124 is connected to one end of the robot arm 122 and may absorb the wafer 103 or hold the wafer 103. For example, the hand 124 may be in a fork shape to hold the wafer 103. The first transfer robot 120 described above is just one embodiment, and may be implemented in various forms.

The aligner 125 aligns the support 101 on which the wafer 103 transferred by the first transfer robot 120 is attached in a predetermined direction. For example, the aligner 125 rotates the support 101 to which the wafer 103 is attached, detects the notch of the rotated wafer 103, and fixes the support 101 to which the wafer 103 is attached. Can be aligned in the direction.

The second transfer robot 130 transfers the support 101 with the wafers 103 aligned in a predetermined direction to the heating units H1 to H3. The heating units H1 to H3 heat the transferred support body 101. The heating portion includes heating plates, which may heat the support to which the wafer 103 is attached.

For example, the heating unit may include first to third heating plates H1 to H3 and a transfer rail 135 spaced apart from the body 110. The second transfer robot 130 transfers the support 101 on which the wafer 103 is attached from the aligner 130 to the first heating plate H1. In this case, the second transfer robot 130 loads the support 101 on which the wafer 103 is attached onto the first heating plate H1 such that one surface of the support 101 contacts the first heating plate H1.

The transfer rail 135 is disposed from the first heating plate to the third heating plates H1, H2, and H3. For example, the transfer rail 135 may be disposed between the first to third heating plates H1 to H3 and adjacent heating plates.

The transfer rail 135 moves from the first heating plate H1 toward the third heating plate H3 to sequentially move the support 101 on which the wafer 103 is attached to the first heating plate H1 and the second. It is moved over the heating plate H2 and the third heating plate H3.

The first heating plate H1 may heat the support 101 to which the wafer 103 is attached at a first temperature for a first heating time. When the heating process by the first heating plate H1 is completed, the transfer rail 135 transfers the support 101 on which the wafer 103 is attached to the second heating plate H2, and the second heating plate H2. ) May heat the support 101 to which the wafer 103 is attached at a second temperature for a second heating time.

When the heating process by the second heating plate H2 is completed, the transfer rail 135 transfers the support 101 on which the wafer 103 is attached to the third heating plate H3, and the third heating plate H3. ) May heat the support 101 to which the wafer 103 is attached at a third temperature for a third heating time.

The separator 140 separates the wafer 103 and the support 101 from the support 101 to which the heated wafer 103 is attached. The separator 140 includes a support fourth heating plate 142, at least one fixing pin 144, a vacuum chuck 146, and a vacuum chuck transfer unit 148.

The fourth heating plate 142 is disposed on the body 110 spaced apart from the third heating plate H3. The transfer rail 135 is disposed between the third heating plate H3 and the fourth heating plate 142 so that the support 101 on which the wafer 103 is attached is removed from the third heating plate H3 by the fourth heating plate. Transfer to (142).

At least one fixing pin 144 is disposed on the fourth heating plate 142 and fixes the support to which the wafer 103 transferred from the third heating plate H3 is attached.

For example, on the fourth heating plate 142, four fixing pins 144 are disposed to be spaced apart from each other, and the four fixing pins 144 are loaded onto the fourth plate 142 by the transfer rail 135. The support 101 to which 103 is attached is fixed. In this case, the fourth plate 142 may heat the support 101 on which the fixed wafer 103 is attached to the fourth temperature for a fourth heating time. In general, the wafer may be attached to the support by an adhesive (eg, a wax) located between the wafer and the support. As the support 101 to which the wafer is attached is heated by the first to fourth heating plates, the adhesive located between the wafer and the support melts.

The number of heating plates included in the embodiment is not limited to the above. In addition, the first to third temperatures may be sequentially increased or the same. For example, the first to third temperatures may be greater than or equal to 70 ° C and less than or equal to 80 ° C, and the fourth temperature may be greater than 80 ° C and less than or equal to 100 ° C. However, the first to fourth temperatures are not limited thereto.

The vacuum chuck 146 adsorbs one surface of the wafer 103 attached to the support 101 loaded on the fourth plate 142. The vacuum chuck transfer unit 148 is connected to the vacuum chuck 146, and moves the vacuum chuck 146 that adsorbs the wafer 103 in the first direction to separate the wafer 103 from the support 101. The first direction may be a direction parallel to one surface of the absorbed wafer 103. The vacuum chuck 146 transfers the adsorbed wafer 103 to the wafer cleaning unit 150.

2A to 2D illustrate a process of separating the wafer and the support by the separator 140 shown in FIG. 1. As shown in FIG. 2A, the support 101 to which the wafer 103 is adhered by the four fixing pins 144 (144-1 to 114-4) is fixed on the fourth heating plate 142. As described above, the adhesive between the wafer 103 and the support 101 is in a molten state by heating of the first to fourth heating plates H1 to H3 and 142. The vacuum chuck transfer 148 approaches the vacuum chuck 146 onto the wafer loaded on the fourth heating plate 142.

As shown in FIG. 2B, the vacuum chuck transfer unit 148 contacts the vacuum chuck 146 to one surface of the wafer 103 on the fourth heating plate 142, and the vacuum chuck 146 contacts the wafer 103. Adsorb.

As illustrated in FIG. 2C, the vacuum chuck transfer unit 148 moves the vacuum chuck 146 on which the wafer 103 is adsorbed in a first direction 210 that is horizontal with one surface of the adsorbed wafer 103. The support 101 is fixed to the fourth heating plate 142 by the fixing pins 144-1 to 144-4, and the adhesive between the wafer and the support is in a molten state, so that the vacuum chuck 146 is moved to the wafer ( When the wafer 103 is moved in the first direction 210 in the state of being adsorbed, the wafer 103 slides in the first direction on the support 101.

As shown in FIG. 2D, the vacuum chuck transfer unit 148 moves the vacuum chuck 146 in the first direction to completely separate the wafer 103 from the support 101.

3 shows an enlarged view of the vacuum chuck 146 shown in FIG. Referring to FIG. 3, the vacuum chuck 146 may include a body 310 connected to the vacuum chuck transfer part 148, a vacuum tube 320 inside the body 310, and a bearing unit disposed inside the body 310. , 330, an adsorption part 350 to adsorb the wafer, at least one fixing member 335 to fix the adsorption part 350 to the bearing part 330, and between the body 310 and the adsorption part 350. The shock absorber 340 is disposed.

The body 310 has one end 312 connected to the vacuum chuck transfer part 148. The adsorption part 350 adsorbs the wafer and is disposed below the other end 314 of the body 310. The bearing part 330 is disposed in the body 310 and rotates by a motor (not shown). The fixing member 335 connects the bearing portion 330 and the suction portion 350. As the bearing part 330 rotates, the suction part 350 fixed to the bearing part 330 by the fixing member 335 also rotates together.

The shock buffer 340 is disposed between the body 310 and the adsorption unit 350 to mitigate the impact applied to the wafer adsorbed to the adsorption unit 350 from the body 310. The shock buffer 340 may have a structure including a spring.

A part of the vacuum tube 320 is disposed in the body 310, and the other part thereof extends from the body 310 and flows into the adsorption part 350. The adsorption part 350 is connected to the vacuum line 352 and the vacuum line 352 introduced into the vacuum line 352 and is exposed to the outside of the adsorption part 350, and a plurality of vacuums that adhere to the wafer for adsorption. Holes 354.

The vacuum tube 320 is connected to a suction pump (not shown), and air flows in the second direction 360 through the vacuum line 352 and the plurality of vacuum holes 354 connected to the vacuum tube 320 by the suction pump. The wafer that is sucked and adhered to the plurality of vacuum holes 354 by the sucked air may be adsorbed to the adsorption unit 350. Here, the second direction may be a direction from the adsorption part 350 toward the body 310.

The shock buffer 340 is disposed between the other end of the body 310 and the suction unit 350, and the suction unit 350 is attached to the wafer 103 on the fourth heating plate 142 by the transfer robot 148. When the contact is in close contact with each other, the shock applied to the wafer 103 is alleviated.

For example, the shock buffer 340 may be a spring structure that surrounds the fixing member 335, one end of which contacts the other end of the body 310, and the other end of which contacts the adsorption part 350.

The separation distance D1 between the bearing part 330 and the shock absorbing part 340 may be 90 mm to 100 mm. Since the vacuum chuck 146 according to the embodiment has a structure in which the bearing portion 330 is spaced apart from the impact buffer portion 340 by 90 mm to 100 mm, when the adsorption portion 350 adsorbs the wafer, the fourth heating is performed. The heat generated from the plate 142 can be suppressed from being conducted to the body 310 and the bearing portion 330. Therefore, the vacuum chuck 146 according to the embodiment may prevent thermal deformation of the body 310 and the bearing portion 330 due to heat generated from the fourth heating plate 142.

In addition, the portion of the fixing member 335 positioned between the adsorption part 350 and the body 330 is exposed to the outside of the body 330, so heat is easily released. Therefore, since the embodiment has a structure capable of easily releasing the heat generated from the fourth heating plate 142, the heat deformation of the body 310 and the bearing part 330 may be prevented.

The wafer cleaning unit 150 cleans the wafer 103 adsorbed to the vacuum chuck 146. For example, the wafer cleaning unit 150 is disposed on a surface opposite to the wafer surface (hereinafter referred to as "first surface of the wafer") adsorbed to the vacuum chuck 146 (hereinafter referred to as "second surface of the wafer"). An opposite spray nozzle is included, and the adhesive remaining on the second surface of the wafer 103 is cleaned with the cleaning liquid sprayed through the spray nozzle. The wafer cleaning unit 150 may remove the adhesive by spraying the cleaning liquid onto the second surface of the wafer 103 by the spray nozzle while the first surface of the wafer 103 is adsorbed to the vacuum chuck 146.

When the cleaning is completed by the wafer cleaning unit 150, the wafer adsorbed to the vacuum chuck 146 is transferred to the third transfer robot 155. The third transfer robot 155 transfers the cleaned wafer 103 to the second port 160, and stores the wafer 103 in a cassette stored in the second port 160.

When separation of the wafer and the support 101 is completed by the vacuum chuck 146, the fixing pins 144-1 to 144-4 release the support 101 from the fourth heating plate 142.

The fourth transfer robot 170 transfers the unsupported support 101 from the fourth heating plate 142 to the support cleaning unit 180 and loads the support 101 in the support cleaning unit 180.

The support cleaner 180 sprays the cleaning solution onto the loaded support 101 to remove the adhesive remaining on the support 101. The support cleaner 180 may include a first cleaner 182 and a second cleaner 184. Each of the first cleaning unit 182 and the second cleaning unit 184 may include a cleaning loading unit (not shown) and an injection nozzle (not shown).

The support 101 is loaded on the cleaning loading unit of the first cleaning unit 182 by the fourth transfer robot 170. The spray nozzle of the first cleaning unit 182 may be disposed to face one surface of the support on which the adhesive loaded on the cleaning loading unit is embedded, and the adhesive may be removed by spraying the cleaning liquid.

When the cleaning of the first cleaning unit 182 is completed, the fifth transfer robot 172 loads the support 102 on the cleaning loading unit of the first cleaning unit 182 into the loading unit of the second cleaning unit 184. The spray nozzle of the second cleaning unit 184 sprays the cleaning liquid onto the first cleaned support body 102 to remove finely remaining adhesive. The support cleaner 180 of the embodiment shown in FIG. 1 includes two cleaning parts, and two steps of cleaning are performed. However, the embodiment is not limited thereto and may be implemented as one cleaning part. It may also be feasible with more than two washes.

When the cleaning of the support cleaner 180 is completed, the sixth transfer robot 190 transfers the support 101 from the support cleaner 180 to the third port 195 and stores it in the third port 195. The support 101 is stored in a cassette.

In general, a wafer polishing process requires a support for supporting a wafer because the wafer is thin and easily broken. That is, the wafer is attached to the support before the polishing process, and the support and the wafer are separated after the polishing process is performed using the support to which the wafer is attached.

At this time, the process of re-separating the bonded wafer (called a debonding process or a demounting process) may greatly affect wafer yield. In general, the bonded wafer bonded support is placed on a hot plate, and then waits a certain time for the adhesive to melt, and then physically and forcibly separates the wafer from the support using paper or the like by an operator. The wafers are transported by a worker using tweezers. However, this manual method can damage the wafer thinned by polishing and cause cracking and chipping of the wafer.

However, the embodiment separates the wafer from the support automatically, not manually, and the separated wafer is transferred to the cassette by the transfer robot to reduce wafer damage due to the separation process, maintain stable quality of the wafer, and reduce defective rate. Can increase productivity and lower production costs due to reduced labor costs.

In addition, the embodiment may provide a shock absorbing portion 340 in the vacuum chuck 146 which is in direct surface contact with the wafer to reduce wafer damage during wafer adsorption.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

110: body 112: first port
160: second port 195: third port
120,130,155,170,175,190: Transfer robots 126: Aligner
135: transfer rails H1 to H3: heating plate
140: separation unit 150: wafer cleaning unit
180: support cleaning part.

Claims (9)

A first port for holding a support to which the wafer is attached by an adhesive;
An aligner for aligning a support to which a wafer transferred from the first port is attached;
A heating unit for heating the wafer-attached support which is transferred from the aligner;
A separation unit separating the wafer and the support from the support to which the wafer transferred from the heating unit is attached;
A support storage port through which the separated support is transported; And
An apparatus for separating a wafer from a support comprising a wafer storage port through which the separated wafer is transferred. The method of claim 1,
The support on which the wafer is attached is transferred from the first port to the alignment unit, from the alignment unit to the heating unit, from the heating unit to the separation unit, or the separated support is transferred to the support storage port. Or a transfer part for transferring the separated wafer to the wafer storage port. The method of claim 2, wherein the heating unit,
First heating plates spaced apart from each other and sequentially heating the support to which the wafer transferred from the aligner is attached; And
And a transfer rail for sequentially transferring the support with the wafer transferred from the aligner to the first heating plates. The method of claim 2, wherein the separation unit,
A second heating plate loaded with a support to which the wafer transferred from the heating unit is attached, and heating the support to which the loaded wafer is attached; And
At least one fixing pin for fixing the support to the second heating plate among the supports to which the loaded wafer is attached; And
And a vacuum chuck for adsorbing a wafer attached to the support fixed to the second heating plate, and moving the adsorbed wafer to separate from the support. 5. The method of claim 4,
And a wafer cleaning unit for cleaning the adhesive remaining on the wafer adsorbed to the vacuum chuck. The method of claim 5,
And a support cleaning unit including a cleaning loading unit in which the separated support is loaded, and a spray nozzle for spraying a cleaning solution onto the loaded support to clean the remaining adhesive.
And the transfer unit separates the support from the wafer from the second heating plate to the cleaning loading unit. The method of claim 4, wherein the vacuum chuck,
Body;
An adsorbing unit disposed to be spaced apart from the body and adsorbing a wafer; And
And a shock buffer disposed between the body and the adsorption part and configured to mitigate an impact applied to the wafer adsorbed to the adsorption part from the body when the wafer is adsorbed. The method of claim 7, wherein the vacuum chuck,
A bearing disposed in the body; And
Further comprising at least one fixing member for fixing the suction unit to the bearing,
And the shock absorbing part surrounds the fixing member, and separates the wafer from the support having a spring structure in which one end contacts the body and the other end contacts the suction part. 9. The method of claim 8,
Separating distance between the bearing portion and the shock absorbing portion is 90mm ~ 100mm device for separating the support and the wafer.
KR1020110048871A 2011-05-24 2011-05-24 A apparatus for seperating a wafer from a support KR20120130849A (en)

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Application Number Priority Date Filing Date Title
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KR20120130849A true KR20120130849A (en) 2012-12-04

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101279391B1 (en) * 2011-12-27 2013-07-04 주식회사 엘지실트론 Demounting system for wafer
WO2018012783A1 (en) * 2016-07-11 2018-01-18 주식회사 미코 Chuck plate for semiconductor post-processing, chuck structure having same chuck plate and chip separating apparatus having same chuck structure
KR20200138600A (en) 2019-06-01 2020-12-10 서동웅 Built-in blind cane for transportation card

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101279391B1 (en) * 2011-12-27 2013-07-04 주식회사 엘지실트론 Demounting system for wafer
WO2018012783A1 (en) * 2016-07-11 2018-01-18 주식회사 미코 Chuck plate for semiconductor post-processing, chuck structure having same chuck plate and chip separating apparatus having same chuck structure
KR20200138600A (en) 2019-06-01 2020-12-10 서동웅 Built-in blind cane for transportation card

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