JP2018181968A - Processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing device that allows a workpiece to be easily adsorbed to the adsorption surface to manufacture a product with good yield.SOLUTION: A processing device 10 includes a conveying device 30 that conveys a plate-like workpiece 1, a placing portion 42 on which the workpiece 1 is placed, an adsorption portion 60 for adsorbing the workpiece 1 to the adsorption surface 62 facing downward by vacuum suction in a state in which the workpiece is placed on the placing portion 42, an upper heating portion 61 provided in the adsorption portion 60 and heating the workpiece 1 from the upper side, and processing means 70 and 80 that process the workpiece 1 in a state in which the workpiece is adsorbed to the adsorption surface 62, and the placing portion 42 has a lower heating portion 43 that heats the lower surface 2 of the workpiece 1, and the lower surface 2 of the workpiece 1 is heated by the lower heating portion 43 before the workpiece 1 is adsorbed to the adsorption surface 62.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a processing apparatus for processing a plate-like work.

  BACKGROUND Conventionally, there has been known a processing apparatus that performs processing such as heating to form a film on a plate-like workpiece such as a semiconductor wafer (see, for example, Patent Document 1).

Japanese Patent Application Laid-Open No. 11-74264

  Here, when performing processing, in order to prevent dust and the like from adhering to the surface to be processed, the work is to be directed to the lower side so that the surface to be processed is directed downward. It is conceivable to carry out processing such as film formation in the adsorbed state. However, if the work is warped at such time, there is a possibility that the work can not be adsorbed on the suction surface. As a result, there is a possibility that processing can not be performed, thereby deteriorating the yield of the product.

  Then, this invention makes it easy to make a workpiece | work adsorb | suck to a suction surface, As a result, it makes it a subject to provide the processing apparatus which can manufacture a product with a sufficient yield.

  In order to achieve such a subject, the invention according to claim 1 has a transfer device for transferring a plate-like workpiece, a placement unit for placing the workpiece, and the workpiece placed on the placement unit. From the state, an adsorption unit to be adsorbed to the adsorption surface facing downward by vacuum suction, an upper heating unit provided to the adsorption unit to heat the workpiece from the upper side, and a state in which the workpiece is adsorbed to the adsorption surface A processing apparatus having processing means for processing, wherein the placing section has a lower heating section for heating the lower surface of the work, and before the work is adsorbed on the suction surface, The processing apparatus is characterized in that the lower heating unit heats the lower surface of the work.

  In the second aspect of the present invention, in addition to the configuration of the first aspect, the transport apparatus is provided with the placement unit, and the work is placed in the placement unit. The processing apparatus is configured to be transported to a predetermined position below the suction surface.

  Further, in the invention according to a third aspect, in addition to the configuration according to the first or second aspect, the suction unit has a suction passage connected to the suction surface, and vacuum suction is performed by the suction passage. According to another aspect of the present invention, there is provided a processing apparatus configured to cause the work to be attracted to the suction surface.

  The invention according to claim 4 has, in addition to the constitution according to any one of claims 1 to 3, an injection means for injecting an inert gas from the adsorption surface, the injection means comprising: The lower heating unit heats the lower surface of the work by the lower heating unit before the work is adsorbed to the adsorption surface, and is placed on the placement unit from the injection passage before the work is attached to the adsorption surface. The processing apparatus is characterized in that an inert gas is injected onto the upper surface of the placed work to cool the upper surface.

  The invention according to claim 5 has, in addition to the constitution according to claim 3, an injection means for injecting an inert gas from the adsorption surface, the injection means comprising a gas generation means and an injection passage. The lower heating unit heats the lower surface of the work by the lower heating unit before the work is adsorbed on the suction surface, and the upper surface of the work placed on the placement unit from the injection path. It is characterized in that it is configured to inject an inert gas to cool the upper surface, and the suction path is a processing device which doubles as the injection path.

  Further, in the invention according to a sixth aspect, in addition to the configuration according to the fourth or fifth aspect, the injection path is a processing device disposed substantially at a central portion in plan view of the suction surface. I assume.

  Further, in the invention according to claim 7, in addition to the configuration according to any one of claims 1 to 6, the work is a semiconductor wafer, and the processing means adsorbs the semiconductor wafer to the adsorption surface. In this state, the transfer device and the placement portion are retracted to form a processing device which is film forming means for forming a film on the lower surface of the semiconductor wafer.

  According to the invention as set forth in claim 1, since the lower heating portion heating the lower surface of the work placed on the mounting portion is provided, the lower surface is heated against the work having a large amount of warpage to cause the warpage. By reducing the amount, the work can be adsorbed on the suction surface facing downward, and as a result, the product can be manufactured with high yield.

  Further, according to the second aspect of the present invention, since the placement portion is provided in the transport device, it is possible to perform all the work from the reduction of the warp due to the heating of the lower surface to the adsorption to the adsorption surface. Processing can be performed efficiently.

  Further, according to the third aspect of the present invention, by performing the vacuum suction by the suction passage, the work can be adsorbed to the adsorption surface, and the work can be more easily adsorbed.

  Further, according to the invention described in claim 4, in addition to the lower heating portion, since the injection means for injecting the inert gas for cooling the upper surface of the work from the adsorption surface is provided, the lower heating portion By heating the lower surface of the workpiece and cooling the upper surface of the workpiece by the jetting means, the amount of warpage of the workpiece can be further reduced.

  Further, according to the invention described in claim 5, in addition to the lower heating unit, since the injection means for injecting the inert gas for cooling the upper surface of the work from the adsorption surface is provided, the lower heating unit By heating the lower surface of the workpiece and cooling the upper surface of the workpiece by the jetting means, the amount of warpage of the workpiece can be further reduced. Furthermore, since the suction path of the adsorption unit also serves as the injection path of the injection means, one path can be used for both suction and inert gas injection, and the apparatus can be simplified and miniaturized. .

  Further, according to the invention as set forth in claim 6, since the injection path of the injection means is disposed at a substantially central portion in plan view of the suction surface, the inert gas spreads uniformly from the center to the outside, causing unevenness. Gas can be distributed throughout.

  Further, according to the invention described in claim 7, even when the expensive semiconductor wafer is warped when the work is a semiconductor wafer and the processing means is a film forming means for forming a film on the lower surface of the semiconductor wafer, The warp can be reduced and adsorbed to the adsorption surface, and as a result, film formation can be reliably performed to improve the yield.

It is a schematic diagram showing a semiconductor wafer film deposition system concerning an embodiment of this invention. It is a schematic diagram showing the inside of the chamber of the semiconductor wafer film deposition system concerning the embodiment. FIG. 16 is a schematic view showing an example in which the semiconductor wafer is mounted in a state of being warped downward in a convex shape in the chamber of the semiconductor wafer film forming apparatus according to the same embodiment. FIG. 16 is a schematic view showing an example in which the semiconductor wafer is mounted in a state of being bent upward in a convex shape in the chamber of the semiconductor wafer film forming apparatus according to the same embodiment. It is a schematic diagram showing the state at the time of carrying out vacuum suction of the semiconductor wafer to a susceptor in the chamber of the semiconductor wafer film-forming apparatus concerning the embodiment. It is a schematic diagram which shows the state when forming into a film by thermal oxidation on a semiconductor wafer within the chamber of the semiconductor wafer film-forming apparatus which concerns on the embodiment.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  1 to 6 show an embodiment of the present invention. Hereinafter, the semiconductor wafer film-forming apparatus 10 as a "processing apparatus" of this invention is demonstrated. In the semiconductor wafer film forming apparatus 10 of this embodiment, the semiconductor wafer 1 as a "work" is transferred by the transfer apparatus 30, and the apparatus is subjected to thermal oxidation processing in the chamber 50 to form a film by thermal oxidation on the surface. It is. The semiconductor wafer 1 of this embodiment is made of silicon carbide (SiC).

  As shown in FIG. 1, the semiconductor wafer film forming apparatus 10 of this embodiment has a clean room 11 inside the wall surface 12, and the clean port 11 includes a load port 20, a transfer device 30, and the like. , And the chamber 50.

  In this embodiment, as shown in FIG. 1, two load ports 20 are provided. The wafer cassette 5 is placed on the load port 20, and the plurality of semiconductor wafers 1 are accommodated in the wafer cassette 5.

  Further, as shown in FIG. 1, the transfer apparatus 30 is an apparatus for transferring the semiconductor wafer 1 inside the semiconductor wafer film forming apparatus 10, and has a transfer robot 31, a load slider 41 and an unload slider 45. There is.

  Among them, the transfer robot 31 includes a transfer arm 32 capable of holding and moving the semiconductor wafer 1. The transfer arm 32 transfers the semiconductor wafer 1 to the wafer cassette 5 of the load port 20 and the centering unit 25. And the start position of the load slider 41 and the end position of the unload slider 45. Further, the transfer arm 32 has a function of reversing the top and bottom of the semiconductor wafer 1 and reverses the top and bottom direction of the semiconductor wafer 1 when stored in the wafer cassette 5 and then mounted on the load slider 41. The semiconductor wafer 1 can be stored in the wafer cassette 5 after reversing the vertical direction of the semiconductor wafer 1 when it has been placed on the unload slider 45.

  The centering unit 25 is a portion for positioning the semiconductor wafer 1, and the transport arm 32 of the transport robot 31 temporarily places the semiconductor wafer 1 here, performs positioning, and takes it out again. The transfer arm 32 of the robot 31 can transfer the semiconductor wafer 1 to the accurate position of the load slider 41. Further, here, when the semiconductor wafer 1 is once mounted on the centering unit 25, the transfer arm 32 reverses the vertical direction of the semiconductor wafer 1.

  Further, the load slider 41 is a device that moves the semiconductor wafer 1 on the space between the outside of the chamber 50 and a predetermined position inside. The load slider 41 is configured to slide relative to the rail member 49, and has a slider mounting portion 42 as a "mounting portion" provided at its tip. Then, with the semiconductor wafer 1 mounted on the slider mounting portion 42, the load slider 41 is moved along the rail member 49.

  Further, in this embodiment, when moving the semiconductor wafer 1 from the outside to the inside of the chamber 50, the load slider 41 is used, and the semiconductor wafer 1 is moved from the inside to the outside of the chamber 50 below the load slider 41. It has an unload slider 45 which is used when making it move. The unload slider 45 also has the same configuration as the load slider 41, and is configured to slide relative to the rail member 49, and has a slider mounting portion 46 provided at the tip thereof. Then, with the semiconductor wafer 1 mounted on the slider mounting portion 46, the unload slider 45 is moved along the rail member 49.

  Thus, the chamber 50 has different transport mechanisms (load slider 41, unload slider 46) from the outside to the inside and from the inside to the outside. As a result, the semiconductor wafer 1 can be taken in and out of the chamber 50 simultaneously, and the working efficiency can be improved.

  As shown in FIGS. 2 to 6, a ring heater 43 is provided below the slider mounting portion 42 of the load slider 41 as a “lower heating portion”. The ring heater 43 can be controlled to a predetermined temperature to heat the lower surface 2 of the semiconductor wafer 1.

  In addition, the chamber 50 performs film formation processing on the semiconductor wafer 1 inside. The chamber 50, as shown in FIGS. 2 to 6, is a semiconductor wafer rotating device as a "processing means, a film forming means" like the adsorption unit 60 and the gas supply device 70 as a "processing means, a film forming means". And 80.

  Further, in the suction unit 60, a susceptor 62 is provided as a "suction surface" facing downward, and the semiconductor wafer 1 is suctioned to the susceptor 62 by vacuum suction. The load slider 41 transports the semiconductor wafer 1 from the outside of the chamber 50 to a position below the susceptor 62 as a “predetermined position”. Further, the semiconductor wafer 1 is transported by the unload slider 45 from the lower side of the susceptor 62 to the outside of the chamber 50.

  Moreover, as shown in FIGS. 2-6, the chamber 50 is comprised so that the adsorption | suction part 60 can move to an up-down direction. In addition, the suction unit 60 includes an upper heating unit 61 and a suction passage 63 of a suction device (not shown) that performs vacuum suction. The suction path 63 is disposed substantially at the center of the susceptor 62 of the suction unit 60 in plan view, and moves the suction unit 60 downward to approach the semiconductor wafer 1 placed on the placement unit 42 of the load slider 41. The semiconductor wafer 1 is attracted to the susceptor 62 by vacuum suction through the suction passage 63 of the suction device.

In addition, an injector (not shown) cools the upper surface 3 of the semiconductor wafer 1 by injecting an inert gas from the susceptor 62 to the susceptor 62 of the adsorption unit 60 before the semiconductor wafer 1 is adsorbed to the susceptor 62. Is provided. Here, the suction path 63 for performing vacuum suction also serves as the injection path of the injection means, and the semiconductor wafer 1 is mounted on the mounting portion 42 and is moved to a predetermined position below the susceptor 62 inside the chamber 50 by the load slider 41. When being moved, the lower surface 2 of the semiconductor wafer 1 is heated by the ring heater 43 of the mounting portion 42 and an inert gas (here, nitrogen (N ₂ )) is injected from the injection path 63 of the injection means. It has become. The inert gas is exhausted from an exhaust port 51 provided on the side of the susceptor 62, as shown in FIG.

Further, as shown in FIG. 6, the chamber 50 includes a gas supply device 70 and a semiconductor wafer rotation device 80. Among them, the gas film forming apparatus 70 supplies gas to the lower surface 2 of the semiconductor wafer 1 from the gas generating unit 71 through the nozzle plate 72. Here, O ₂ and SiH ₄ are generated by the first gas generation unit 73 at the center, and N ₂ is generated by the second gas generation unit 74 around the first gas generation unit 73. Further, the semiconductor wafer rotation device 80 is provided with a rotation mechanism 81, which is integrally fixed to the suction unit 60, and is configured to rotate the susceptor 62 at the time of film formation. Although the illustrated amount is omitted in FIGS. 2 to 5, the semiconductor wafer rotating device 80 is always fixed to the upper portion of the suction unit 60, and simultaneously moves up and down.

Then, with respect to the semiconductor wafer 1 adsorbed to the adsorption surface 62 by vacuum suction, the upper side lower heating portion 61 heats the semiconductor wafer 1 and the semiconductor wafer rotation device 80 rotates the susceptor 62 to supply gas. By supplying SiH ₄ , O ₂ and N ₂ from the apparatus 70, a film forming process is performed on the lower surface 2 of the semiconductor wafer 1 adsorbed by the susceptor 62 by the thermal oxidation process. At this time, since the susceptor 62 is rotated, gas can be supplied while the semiconductor wafer 1 is rotated. Thus, film formation can be uniformly performed on the semiconductor wafer 1. The gas at this time is discharged from the exhaust pipe 75 through the exhaust port 51.

  Next, the operation of this embodiment will be described.

  First, as shown in FIG. 1, the transfer arm 32 of the transfer robot 31 takes out one semiconductor wafer 1 from the wafer cassette 5 placed on the load port 20. Then, the semiconductor wafer 1 is inverted and placed on the centering unit 25 for positioning.

  Next, the semiconductor wafer 1 for which positioning has been performed is placed on the placement unit 42 positioned at the stop position on the front side of the load slider 41. Then, while the semiconductor wafer 1 is held by the holding unit (not shown) of the mounting unit 42, the load slider 41 slides and is transported into the chamber 50.

  Then, when it reaches a predetermined position below the adsorption unit 60, the lower surface 2 of the semiconductor wafer 1 is heated by the ring heater 43, and an inert gas (nitrogen gas) of normal temperature is injected from the injection path 63 of the injection means for cooling. Be done. After continuing the state for a predetermined time, the nitrogen gas for cooling is stopped, and at the same time, the injection path 63 is switched to a role as a suction path, vacuum suction is started, and the semiconductor wafer 1 is adsorbed by the susceptor 62 facing downward. At this time, as shown in FIGS. 3 and 4, even if the semiconductor wafer 1 is warped, the warp is reduced by heating the lower surface 2 or cooling the upper surface 3 or performing both heating and cooling. It can be adsorbed to 62.

  In particular, when the lower side as shown in FIG. 4 is used, the area in contact with the susceptor 62 is small as it is, so that adsorption is often not possible, but heating and / or cooling is performed as described above to reduce warpage. As a result, the susceptor 62 can be adsorbed.

Thereafter, the load slider 41 and the mounting portion 42 are retracted out of the chamber 50, and the adsorption portion 60 and the semiconductor wafer rotating device 80 are moved closer to the gas supply device 70 as shown in FIG. With these configurations, the semiconductor wafer 1 is heated by the upper heating unit 61 and SiH ₄ , O ₂ and N ₂ are sprayed on the lower surface 2 of the semiconductor wafer 1 while rotating the susceptor 62 by the semiconductor wafer rotating device 80 A film is formed by oxidation treatment.

  Thereafter, the suction unit 60 and the semiconductor wafer rotation device 80 are moved upward from the position at the time of film formation, and the unload slider 46 is moved from the outside of the chamber 50 below the suction unit 60. 1 is placed on the mounting portion 46 of the unload slider 45 and transported out of the chamber 50.

  Then, after cooling for a predetermined time, the transfer arm 32 of the transfer robot 31 stores the wafer cassette 5 in the load port 20 while reversing the vertical direction. Thereafter, the shutter (not shown) of the wafer cassette 5 is closed, and the wafer cassette 5 is transported to an apparatus for performing the next process.

  Next, a description will be given of an experimental example in which the semiconductor wafer 1 in a state along the lower side as shown in FIG. In this experiment, evaluation is made on the case where film formation is performed with a 6 inch, t = 300 μm semiconductor wafer 1 made of SiC set at a stage temperature of 400 ° C. using a face-down APCVD apparatus (A200) manufactured by AMANYA MFG. went.

  Here, a sample (280 to 650 μm at normal temperature) where the amount of warpage of semiconductor wafer 1 is large relative to a standard (80 to 100 μm at normal temperature) is prepared. An experiment was conducted to see if the susceptor 62 of the chamber 50 could be adsorbed without performing heating and cooling from the injection path 63. The suction pressure in the suction passage 63 was 80 kPa or more. The results were not adsorptive.

Next, the ring heater 43 of the present invention is heated to 200 ° C. for a sample having a large amount of warpage (280 to 650 μm at normal temperature), and the gap A (see FIG. 4) of the ring heater 43 and the semiconductor wafer 1 is 1 mm. Then, the lower surface 2 of the semiconductor wafer 1 is heated, N ₂ at normal temperature is sprayed at 20 L / min from the injection path 63 of the injection means, heating and cooling are performed for 1 minute, and then the chamber 50 with the same suction pressure. The experiment was conducted to see if it could be adsorbed on the susceptor 62 of The results were adsorbed and then film formation could be performed.

  As described above, according to the semiconductor wafer film forming apparatus 10 of the embodiment described above, since the ring heater 43 for heating the lower surface 2 of the semiconductor wafer 1 placed on the placement unit 42 is provided, the amount of warpage is By heating the lower surface 2 with respect to the large semiconductor wafer 1 to reduce the amount of warpage, the semiconductor wafer 1 can be adsorbed by the susceptor 62 facing downward, and as a result, the product is manufactured with high yield. can do.

  Further, according to the semiconductor wafer film forming apparatus 10 of the above-described embodiment, since the mounting portion 42 is provided on the load slider 41, the semiconductor wafer 1 is not displaced, and the warp of the lower surface 2 due to heating is caused. From the reduction to the adsorption to the susceptor 62 can be performed, and the processing can be performed efficiently.

  Further, according to the semiconductor wafer film forming apparatus 10 of the above-described embodiment, the semiconductor wafer 1 can be adsorbed to the susceptor 62 by performing vacuum suction by the suction passage 63, and the semiconductor wafer 1 can be more easily adsorbed. be able to.

  Further, according to the semiconductor wafer film forming apparatus 10 of the embodiment described above, in addition to the ring heater 43, the injection path 63 of the injection means for injecting the inert gas for cooling the upper surface 3 of the semiconductor wafer 1 from the susceptor 62 Since it has, the lower surface 2 of the semiconductor wafer 1 is heated by the ring heater 43, and the upper surface 3 of the semiconductor wafer 1 is cooled by the injection path 63 of the injection means to further reduce the amount of warpage of the semiconductor wafer 1 be able to.

  Further, according to the semiconductor wafer film forming apparatus 10 of the above-described embodiment, since the suction path 63 for vacuum suction in the suction unit 60 also serves as the injection path of the injection means, one path can be used for suction and inert gas injection. Can be used for both applications, and the device can be simplified and miniaturized.

  Further, according to the semiconductor wafer film forming apparatus 10 of the above-described embodiment, since the injection path 63 of the injection means is disposed substantially at the center of the susceptor 62 in plan view, the inert gas is directed outward from the center. Spread evenly and distribute the gas evenly throughout.

  Further, according to the semiconductor wafer film forming apparatus 10 of the above-described embodiment, the gas supply apparatus 70 as a film forming means for forming a film on the lower surface 2 of the semiconductor wafer 1 with the work being the semiconductor wafer 1 and the semiconductor In the case of the wafer rotation device 80, even if the expensive semiconductor wafer 1 is warped, the warp can be reduced and adsorbed to the susceptor 62. As a result, film formation can be reliably performed to improve yield. can do.

  The embodiments described above are described to facilitate understanding of the present invention, and are not described to limit the present invention.

  For example, in the above-described embodiment, the semiconductor wafer 1 made of SiC is used, but the present invention is not limited to this, and if the warpage is a problem, an appropriate material such as silicon is used. be able to. The workpiece is not limited to a semiconductor wafer, and may be applied to other substrates and the like. Further, in the above-described embodiment, the technology of the present invention is used for the semiconductor wafer film forming apparatus. However, the present invention is not limited to this, and an apparatus other than the film forming apparatus can be applied. is there.

  Further, in the above-described embodiment, heating from the lower heating unit and cooling from the jetting means are always performed, but the present invention is not limited to this. The heating and cooling are controlled according to the amount of warpage of the work, such as heating or cooling is performed when the amount of warpage is a predetermined amount or more, and both heating and cooling are performed when the amount of warpage is large. You may come to

1 Semiconductor wafer (work)
2 lower surface 3 upper surface 10 semiconductor wafer film forming apparatus (processing apparatus)
20 load port 30 transport device 31 transport robot (transport device)
41 Load Slider (Transport Device)
42 placement unit 43 ring heater (lower heating unit)
45 Unloading slider (transport device)
46 mounting unit 50 chamber 60 suction unit 61 upper heating unit 62 susceptor (suction surface)
63 Suction path, injection path 70 Gas supply device (film forming means, processing means)
80 Semiconductor wafer rotation device (film forming means, processing means)

Claims (7)

A conveying device for conveying a plate-like workpiece;
A placement unit on which the work is placed;
An adsorption unit for adsorbing the work piece to a suction surface facing downward by vacuum suction from a state where the work is placed on the placement unit;
An upper heating unit provided in the suction unit to heat the work from above;
A processing means for processing the work in a state where the work is adsorbed to the suction surface;
A processing device having
The placing portion has a lower heating portion for heating the lower surface of the work, and the lower heating portion heats the lower surface of the work before the suction surface adsorbs the work. A processing apparatus characterized in that it is configured.   The placement unit is provided in the transport apparatus, and the workpiece is configured to be transported to a predetermined position below the suction surface in a state where the work is placed on the placement unit. The processing apparatus according to claim 1, wherein   The suction unit has a suction passage connected to the suction surface, and is configured to suction the work onto the suction surface by performing vacuum suction with the suction passage. Or the processing apparatus as described in 2. It has injection means for injecting an inert gas from the adsorption surface,
The injection means is composed of a gas generation means and an injection path,
The lower heating unit heats the lower surface of the work before the work is adsorbed on the suction surface, and the inert gas is injected from the injection path onto the upper surface of the work placed on the placement unit. The processing apparatus according to any one of claims 1 to 3, wherein the processing unit is configured to cool the upper surface. It has injection means for injecting an inert gas from the adsorption surface,
The injection means is composed of a gas generation means and an injection path,
The lower heating unit heats the lower surface of the work before the work is adsorbed on the suction surface, and the inert gas is injected from the injection path onto the upper surface of the work placed on the placement unit. Is configured to cool the upper surface,
The processing apparatus according to claim 3, wherein the suction path doubles as the injection path.   The said injection path is arrange | positioned by planar view substantially center part of the said adsorption | suction surface, The processing apparatus of Claim 4 or 5 characterized by the above-mentioned. The workpiece is a semiconductor wafer,
The processing means is a film forming means for forming a film on the lower surface of the semiconductor wafer by retracting the transfer device and the placing portion in a state where the semiconductor wafer is adsorbed to the adsorption surface. The processing apparatus according to any one of claims 1 to 6, characterized in that:

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