KR20120119368A - Touch sensor in-cell type liquid crystal display device and method of fabricating the same - Google Patents

Abstract

PURPOSE: A touch sensor in-cell type liquid crystal display device and a manufacturing method thereof are provided to fundamentally prevent short-circuit due to remaining conductive materials on a boundary of a first protective layer. CONSTITUTION: A second protective layer(155) is formed on a frontal side of a substrate on a common electrode, an x sensing line, and a y sensing line. The second protective layer comprises a second drain contact hole. The second drain contact hole exposes a drain electrode. A pixel electrode(160) contacts the drain electrode through the second drain contact hole on the second protective layer. The pixel electrode is formed on each pixel area. The pixel electrode has bar-shaped openings.

Description

Array substrate for touch sensor in-cell type liquid crystal display device and manufacturing method thereof {Touch sensor in-cell type liquid crystal display device and method of fabricating the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to an array substrate for a touch sensor in-cell type liquid crystal display device and a method of manufacturing the same, which can prevent a short circuit between wires caused by a residual film remaining during pixel electrode patterning.

Recently, liquid crystal displays have been spotlighted as next generation advanced display devices having low power consumption, good portability, high technology value, and high added value.

Of these liquid crystal display devices, an active matrix type liquid crystal display device having a thin film transistor, which is a switching device capable of controlling voltage on and off for each pixel, .

In general, a liquid crystal display device forms an array substrate and a color filter substrate through an array substrate manufacturing process for forming thin film transistors and pixel electrodes, and a color filter substrate manufacturing process for forming color filters and common electrodes, And a liquid crystal interposed therebetween.

In more detail, referring to FIG. 1, which is an exploded perspective view of a general liquid crystal display, the array substrate 10 and the color filter substrate 20 are faced to each other with the liquid crystal layer 30 interposed therebetween. The lower array substrate 10 includes a plurality of gate lines 14 and data lines 16 arranged vertically and horizontally to the top surface of the transparent substrate 12 to define a plurality of pixel regions P. These two lines Thin film transistors Tr are provided at the intersections of the fourteen and sixteenth ones, and one-to-one correspondences are made with the pixel electrodes 18 provided in the pixel regions P. FIG.

In addition, the upper color filter substrate 20 facing the array substrate 10 is a rear surface of the transparent substrate 22 and non-display of the gate wiring 14, the data wiring 16, and the thin film transistor Tr. A grid-like black matrix 25 is formed around each pixel region P so as to cover an area, and red (R) and green are sequentially arranged in order to correspond to each pixel region P in the grid. A color filter layer 26 including (G) and blue (B) color filter patterns 26a, 26b, and 26c is formed, and is transparent over the entire surface of the black matrix 25 and the color filter layer 26. The common electrode 28 is provided.

Although not shown in the drawings, each of the two substrates 10 and 20 is sealed with a sealant or the like along the edge to prevent leakage of the liquid crystal layer 30 interposed therebetween. 10 and 20 are interposed between upper and lower alignment layers that provide reliability in the molecular alignment direction of the liquid crystal at a boundary between the liquid crystal layer 30 and a polarizing plate (not shown) on at least one outer surface of each of the substrates 10 and 20. ) Is provided.

In addition, a back-light is provided on the outer surface of the array substrate 10 to supply light, so that the on / off signal of the thin film transistor Tr is supplied to the gate wiring 14. When the image signal of the data wiring 16 is transferred to the pixel electrode 18 of the selected pixel region P by being sequentially scanned and applied, the liquid crystal therebetween by the vertical electric field between the common electrode 28 and the pixel electrode 18. Molecules are driven and various images can be displayed by the change in the transmittance of light.

However, the liquid crystal display device having the above-described configuration does not have excellent viewing angle characteristics. Recently, the common electrode and the pixel electrode are disposed on the same array substrate, and the fringes driven by the horizontal electric field type or the fringe electric field drive the liquid crystal molecules by the horizontal electric field. Field switching mode liquid crystal displays have been proposed.

In addition, such transverse field type and fringe field switching mode liquid crystal display devices are used in various applications such as TVs, projectors, mobile phones, PDAs, and the like. It's happening. The liquid crystal display device having a touch function is generally called a touch sensor in-cell type liquid crystal display device.

An array substrate for a touch sensor in-cell type liquid crystal display device includes a plurality of touch blocks for sensing a user's touch in addition to a gate and data wiring as an example of a general component of the liquid crystal display device as described above for performing a touch sensing function. The configuration of the wiring is further required.

Therefore, an array substrate for a touch sensor in-cell type liquid crystal display device having such a configuration is usually subjected to 11 mask processes when a thin film transistor having a polysilicon semiconductor layer having excellent mobility characteristics is provided.

Such a touch in-cell type liquid crystal display array substrate is provided with a gate insulating film, an interlayer insulating film, an auxiliary insulating layer, and first and second protective layers as the insulating layer.

At this time, the auxiliary insulating layer of the insulating layer is formed by depositing an inorganic insulating material to improve the adhesion between the components of the metal material, for example, the data wiring, the source and drain electrodes and the first protective layer of the organic insulating material. Although the auxiliary insulating layer is omitted, efforts have been made to have a structure in which only two of the auxiliary insulating layers are formed.

However, when the auxiliary insulating layer made of the inorganic insulating material is deleted, the end of the first protective layer having the high step in the step of patterning the pixel electrode in the pad part exposed because the first protective layer made of the organic insulating material is not formed. In particular, a problem arises in that short circuits between data link wirings occur due to the remaining residues.

In order to solve the above problems, an object of the present invention is to provide an array substrate for a touch sensor in-cell type liquid crystal display device which can prevent the short-circuit caused by the residue of the conductive material generated at the boundary of the first protective layer. It is done.

In order to achieve the above object, an array substrate for a touch sensor in-cell type liquid crystal display device according to the present invention includes a display area having a plurality of pixel areas and a non-display area having a pad portion outside thereof, and having a plurality of display areas in the display area. Gate and data lines formed by crossing each other with a first insulating film at the boundary of each pixel area on a substrate having a plurality of touch blocks having the pixel area as a group; A thin film transistor connected to the gate and data line in each pixel area; A first protective layer formed of an organic insulating material and having a first drain contact hole exposing a drain electrode of the thin film transistor over the thin film transistor; A common electrode formed to be spaced apart from each touch block on the first passivation layer; An x sensing wiring formed on the common electrode to overlap the gate wiring and a y sensing wiring formed on the common electrode and overlapping the data wiring; A second passivation layer formed on the entire surface of the substrate over the common electrode, the x sensing wiring, and the y sensing wiring, and having a second drain contact hole exposing the drain electrode; A pixel electrode contacting the drain electrode through the second drain contact hole on the second passivation layer and formed for each pixel area, the pixel electrode having a plurality of bar-shaped openings, and the non-display area and the pad. An auxiliary data link pattern is provided on the same layer on which the gate wiring is formed, and the first insulating layer includes first and second link contact holes that expose both ends of the auxiliary data link pattern, respectively. A first data link wire connected to the data line on the layer on which a wire is formed and contacting the auxiliary data link pattern through the first link contact hole, and spaced apart from the auxiliary data link pattern through the second link contact hole And a second data link wiring in contact with the second electrode.

Each of the touch blocks is connected by an adjacent touch block in the extending direction of the gate line and the x sensing wiring, and each of the touch blocks is spaced between the first and third regions spaced apart from each other, and between the first and third regions. And a second region connected by a touch block adjacent to the data wiring in an extending direction of the data line, and a second region connected by the y-sensing wiring, wherein the common electrode is separated into the first, second, and third regions in each of the touch blocks. .

The x-sensing wirings formed in the first and third regions in the touch block are formed to be separated from each other at a boundary between the first region and the second region and at a boundary between the second region and the third region. .

The gate electrode may be formed under the first insulating film, and the data wire may be formed on the first insulating film, and the same material may be formed on the first insulating film in parallel with the gate wire. And a sensing auxiliary wiring formed for each touch block, wherein the x sensing wiring and the sensing auxiliary wiring are connected to each other in the touch block.

The first passivation layer includes a first contact hole for exposing the first insulating layer corresponding to the end of the x-sensing wiring for each touch block, and the x passivation layer includes the first contact hole inside the first contact hole. A second contact hole exposing an end of the sensing wiring is provided, and the first insulating layer is provided with a third contact hole exposing the end of the sensing auxiliary wiring in a form in which the first contact hole is extended and connected to each other; The end of the x-sensing wiring exposed through the second and third contact holes and the end of the sensing auxiliary wiring are formed in contact with a connection pattern made of the same material constituting the pixel electrode.

The common electrode may have a first opening corresponding to a portion where the thin film transistor is formed, and a second opening having a larger area corresponding to the first contact hole may be formed.

The touch blocks formed on the same line in the extending direction of the gate wiring among the touch blocks are all electrically connected by the x sensing wiring, and the touch blocks formed on the same line in the extending direction of the data wiring among the touch blocks. The blocks are formed to be electrically connected to each other by the y sensing wiring.

In the non-display area, a gate link wiring connected to the gate wiring is formed on the same layer on which the gate wiring is formed. A data pad electrode connected to the second data link wire is formed on the same layer, and the first protective layer is formed while exposing the pad part.

The second passivation layer includes a data pad contact hole exposing the data pad electrode, and the second passivation layer and the first insulating layer include a gate pad contact hole exposing the gate pad electrode. An auxiliary data pad electrode contacting the data pad electrode through the data pad contact hole with the same material forming the pixel electrode on the passivation layer, and an auxiliary gate pad electrode contacting the gate pad electrode through the gate pad contact hole. It is characterized by the formation.

The thin film transistor includes a semiconductor layer including a first semiconductor region of pure polysilicon and a second semiconductor layer of polysilicon doped with impurities on both sides thereof in a stacked form on a second insulating layer, a gate insulating layer, and the first A first insulating film having a gate electrode corresponding to the semiconductor region, a semiconductor layer contact hole exposing the second semiconductor region, and a source electrode and a drain electrode spaced apart from each other and in contact with the second semiconductor region, respectively. Is characteristic.

The common electrode and the pixel electrode are made of a transparent conductive material.

In the method of manufacturing an array substrate for a touch sensor in-cell type liquid crystal display device according to the present invention, a display area having a plurality of pixel areas and a non-display area outside thereof are defined, and the plurality of pixel areas in the display area are grouped into one group. Forming a gate line and a data line intersecting each other and a thin film transistor connected to the two lines by interposing a first insulating film at a boundary of each pixel region on a substrate on which a plurality of touch blocks are defined; Forming a first protective layer formed of an organic insulating material over the thin film transistor and having a first drain contact hole exposing the drain electrode of the thin film transistor over the thin film transistor and exposing the pad part; Forming a common electrode spaced apart from each touch block on the first passivation layer; Forming an x sensing wiring overlapping the gate wiring and a y sensing wiring overlapping the data wiring on the common electrode; Forming a second passivation layer having a second drain contact hole connected to the first drain contact hole and exposing the drain electrode on a front surface of the common electrode, the x sensing wiring, and the y sensing wiring; Forming a pixel electrode in contact with the drain electrode through the second drain contact hole on the second passivation layer and having a plurality of bar-shaped openings in each pixel region; The method may include forming an auxiliary data link pattern in the non-display area and the pad part. The forming of the first insulating layer may include first and second links exposing both ends of the auxiliary data link pattern, respectively. And forming a contact hole, wherein the forming the data line comprises: a first data link line connected to the data line and in contact with the auxiliary data link pattern through the first link contact hole; Forming a second data link wire in contact with the auxiliary data link pattern through the second link contact hole; Features.

Each of the touch blocks is connected by an adjacent touch block in the extending direction of the gate line and the x sensing wiring, and each of the touch blocks is spaced between the first and third regions spaced apart from each other, and between the first and third regions. And a second region connected by a touch block adjacent to the data wiring in an extending direction of the data line, and a second region connected by the y-sensing wiring. to be.

The x-sensing wirings formed in the first and third regions in the touch block may be formed to be spaced apart from each other at the boundary between the first and second regions and at the boundary between the second and third regions. to be.

The gate electrode may be formed under the first insulating film, and the data line may be formed above the first insulating film, and the forming of the gate wire may be performed for each touch block in parallel with the gate wire on the first insulating film. And forming a sensing auxiliary wiring, wherein the x sensing wiring and the sensing auxiliary wiring are connected within each touch block.

The forming of the first passivation layer may include providing a first contact hole for exposing the first insulating layer corresponding to an end of the x sensing wiring for each touch block, and forming the second passivation layer. The second contact hole may be provided to expose an end of the x-sensing wiring inside the first contact hole, and the forming of the first insulating layer may include the sensing assistant extending in the form of the first contact hole. A third contact hole is formed to expose an end of the wiring, and the forming of the pixel electrode may include forming the pixel electrode by connecting the ends of the x sensing wiring exposed through the second and third contact holes connected to each other with the sensing auxiliary wiring. It characterized in that it comprises the step of forming a connection pattern in contact with the end at the same time.

The common electrode may have a first opening corresponding to a portion where the thin film transistor is formed, and a second opening having a larger area corresponding to the first contact hole.

 The touch blocks formed on the same line in the extending direction of the gate wiring among the touch blocks are all electrically connected by the x sensing wiring, and the touch blocks formed on the same line in the extending direction of the data wiring among the touch blocks. The blocks are formed to be electrically connected to each other by the y sensing wiring.

The forming of the gate wiring may include forming a gate link wiring connected to the gate wiring in the non-display area and simultaneously forming a gate pad electrode connected to the gate link wiring in the pad portion. The forming of the data pad electrode may include forming a data pad electrode connected to the second data link line in the pad part.

The forming of the second passivation layer may include exposing the gate pad electrode by simultaneously patterning a data pad contact hole exposing the data pad electrode and the first insulating layer disposed below the second passivation layer. And forming a gate pad contact hole, wherein the forming of the pixel electrode includes: an auxiliary data pad electrode contacting the data pad electrode through the data pad contact hole on the second passivation layer; And forming an auxiliary gate pad electrode in contact with the gate pad electrode through a pad contact hole.

The forming of the thin film transistor may include forming a pure amorphous silicon layer on a first insulating film; Crystallizing the pure amorphous silicon layer with a polysilicon layer; Patterning the polysilicon layer to form a semiconductor layer of polysilicon; Forming a gate insulating film over the semiconductor layer of polysilicon; Forming a gate electrode connected to the gate wiring at a central portion of the semiconductor layer of polysilicon over the gate insulating layer; Performing impurity doping using the gate electrode as a doping mask to change the semiconductor layer of a portion exposed to the outside of the gate electrode into an impurity polysilicon layer; Forming a first insulating film having a semiconductor layer contact hole on the gate electrode, the semiconductor layer contact holes respectively exposing the semiconductor layer of the impurity polysilicon on both sides of the gate electrode; Forming a source electrode and a drain electrode on the first insulating layer, the source electrode and the drain electrode respectively contacting the semiconductor layer of the impurity polysilicon through the semiconductor layer contact hole.

In the array substrate for a touch sensor in-cell type liquid crystal display device according to the present invention, the auxiliary data link wiring is formed in correspondence with the data link wiring at the step of forming the gate wiring in the pad portion where the first protective layer made of the organic insulating material is not formed. Forming a pixel electrode by contacting the data link wires with the auxiliary link wires through contact holes at the edges of the first protective layer, even though residue remains on the boundary of the first protective layer having a large step. There is an effect that can prevent the short between the data link wiring.

By suppressing the short wiring defect by the residue, there is an effect of improving the yield by reducing the defective rate.

Furthermore, since only one protective layer can be omitted by providing only two protective layers, there is an effect of improving the productivity per unit time by reducing the material cost and eliminating the process.

1 is an exploded perspective view of a general liquid crystal display device.
2 is a plan view of one pixel area including a thin film transistor of a display area in an array substrate for a touch sensor in-cell type liquid crystal display according to an exemplary embodiment of the present invention.
3 is a plan view of a pad portion of a non-display area and a periphery thereof in an array substrate for a touch sensor in-cell type liquid crystal display according to an exemplary embodiment of the present invention.
4 is a schematic plan view of one touch block of an array substrate for a touch sensor in-cell type liquid crystal display according to an embodiment of the present invention;
5 is a cross-sectional view of one pixel area including a portion where a thin film transistor as a switching element is formed in an array substrate for a touch in-cell type liquid crystal display according to an exemplary embodiment of the present invention.
FIG. 6 is a cross-sectional view of a portion taken along the cutting line VI-VI of FIG. 3. FIG.
FIG. 7 is a cross-sectional view of a portion cut along the cutting line VIII-VIII in FIG. 3. FIG.
FIG. 8 is a cross-sectional view of a portion of an array substrate for a touch in-cell type liquid crystal display device according to an embodiment of the present invention in which the ends of the x-sensing wiring and the sensing auxiliary wiring are located within each touch block. FIG.
9A to 9J are cross-sectional views illustrating manufacturing steps of one pixel area including a portion in which a thin film transistor as a switching element is formed in an array substrate for a touch in-cell type liquid crystal display according to an exemplary embodiment of the present invention.
10A to 10J are cross-sectional views of manufacturing steps of a portion cut along the cutting line VI-VI of FIG. 3.
11A to 11J are cross-sectional views of manufacturing steps for a portion cut along the cutting line VIII-VIII in FIG. 3.
12A to 12J are cross-sectional views illustrating manufacturing steps of a portion where an end of an x sensing wiring and a sensing auxiliary wiring located in each touch block in an array substrate for a touch in-cell type liquid crystal display according to an exemplary embodiment of the present invention is shown.

Hereinafter, preferred embodiments according to the present invention will be described with reference to the drawings.

FIG. 2 is a plan view of one pixel area including a thin film transistor of a display area in an array substrate for a touch sensor in-cell type liquid crystal display according to an exemplary embodiment of the present invention, and the sensing wiring overlapping the gate and data lines is omitted. 3 is a plan view of a pad portion of a non-display area and its surroundings in an array substrate for a touch sensor in-cell type liquid crystal display according to an exemplary embodiment of the present invention, and FIG. 4 is a touch sensor according to an exemplary embodiment of the present invention. A schematic plan view of one touch block of an array substrate for an in-cell type liquid crystal display device.

As shown, a plurality of gate wires 119 extending in one direction and a plurality of gate wires 119 extend in a display area of the array substrate 101 for a touch sensor in-cell type liquid crystal display device according to an exemplary embodiment of the present invention. A plurality of data lines 130 defining a plurality of pixel areas P are formed to cross each other.

In addition, each pixel area P defined as an area surrounded by the plurality of gate wires 119 and the data wires 130 has a thin film transistor connected to the gate and data wires 119 and 130 that define it. Tr) is formed.

In addition, the sensing wirings xsl and ysl are formed to overlap some of the gate wirings 119 and the data wirings 130. At this time, the x sensing wiring (xsl) is formed overlapping with the part of the gate wiring 119, and the y sensing wiring (ysl) is formed overlapping with the partial data wiring (130).

In addition, a pixel electrode 160 is formed in each pixel region P to contact the drain electrode 136 of the thin film transistor Tr and have a plurality of bar-shaped openings oa3. The touch block TB is configured by using a plurality of pixel areas P including the pixel electrode 160 as one touch sensor unit.

Each touch block TB having a plurality of pixel areas P as a unit is divided into three areas A1, A2, and A3. In this case, the three regions A1, A2, and A3 provided in the touch blocks TB are sequentially divided into the first, second, and third regions A1, A2, and A3 in the direction in which the gate wiring 119 extends. have.

In this case, the second area A2 is connected to the touch block TB adjacent to the top and bottom thereof through the y sensing wiring ysl, and the second area A2 is positioned on the left and right sides of the second area A2. The first area A1 and the third area A3 are connected to each other through the touch block TB and the x sensing wiring xsl positioned at left and right sides thereof.

That is, the first area A1 in each touch block TB is connected to the third area A3 of the touch block TB located on the left side of the touch block TB through the x sensing wiring xsl, A3) is connected to the first region A1 of the touch block TB located on the right side thereof through the x sensing wiring xsl.

On the other hand, the x sensing wiring (xsl) provided in the second area (A2) in each touch block (TB) is patterned in the form of a bar (bar), so that the first and third regions (1 and 3) located on their left and right sides, respectively ( It is characterized by having a configuration disconnected from the x sensing wiring xsl provided in A1 and A2.

That is, the x sensing wiring xsl is disconnected at the boundary between the first region A1 and the second region A2 and the boundary between the third region A3 and the second region A2 in each touch block TB. It is characterized by forming a form.

At this time, the x-sensing wiring xsl itself is disconnected at the boundary between the regions A1, A2, and A3 within each touch block TB, but the x-sensing wiring xsl is electrically connected to each touch. In the block TB, the first and second regions A1 and A2 and the second and third regions A2 and A3 are connected.

That is, the ends of the x sensing wiring xsl formed in a disconnected shape in the first region A1 and the third region A3 are spaced apart from the gate wiring 119 on the gate insulating layer (not shown), respectively. Sensing auxiliary wiring 122 formed in the second area A2 in each touch block TB, and each end of which is located in the first and third areas A1 and A2 in each touch block TB. Second and first sensing contact holes 158 and 148 formed through and connected to the first protective layer (not shown), the second protective layer (not shown), and the interlayer insulating layer (not shown), respectively. It is characterized by being in contact with.

In this case, although not shown in the drawing, an x-direction sensing circuit connected to the x-sensing wiring xsl is formed at each end of the touch block TB arranged on the same line in the extending direction of the gate and data lines 119 and 130, respectively. A y direction sensing circuit (not shown) connected to the y sensing wiring ysl is mounted.

Therefore, when a touch occurs with respect to the touch block TB positioned in any part of the display area, the pixel electrode 165 and the common electrode overlapping each other with a third passivation layer (not shown) interposed therebetween. The change in capacitance caused by the signal is transferred to the x-direction sensing circuit (not shown) and the y-direction sensing circuit (not shown) through the x sensing wiring (xsl) and the y sensing wiring (ysl) connected thereto. As a result, the touched portion of the display area is recognized.

Meanwhile, referring to the non-display area NA of the array substrate 101 for the touch sensor in-cell type liquid crystal display device having the above configuration, the display area AA extends from the display area AA to the non-display area NA. The gate link 119 is connected to an end of the gate line 119 and is provided with a gate link line (not shown), and is connected to one end of the data line 130 to form a data link line 131.

In addition, the pad portion PA of the non-display area NA is connected to the gate link line (not shown) and has a gate pad electrode (not shown), and is connected to the data link line 131 and is a data pad. The electrode 132 is formed.

The pad part PA is substantially connected to an external driving circuit board (not shown) via a FPCB (flexible printed circuit board) (not shown) in which a driving IC is mounted, and the FPCB (not shown) or the like. In consideration of defects and adhesive strength during mounting, an insulating layer made of an organic insulating material is not formed.

Accordingly, in the non-display area NA, a portion having a relatively large step is generated at the boundary of the pad part PA by the first protective layer 145 made of an organic insulating material. After the formation of a common electrode (not shown) deposited on the entire surface of the substrate 101 due to a large step at the boundary of PA), the remaining data of the material forming the common electrode (not shown) remains when the patterning is performed. Short defects between the link wirings 131 are caused.

In the exemplary embodiment of the present invention, in order to solve this problem, in the non-display area NA and the pad portion PA in which the data link wiring 131 is formed, the data link wiring 131 is a pad portion PA. It is characterized in that it is formed so that the break is generated based on the boundary of the pad portion PA, instead of being formed to extend to the same layer with the same material.

In addition, the gate link wiring (not shown) and the gate link wiring (not shown) are formed on the layer where the gate link wiring (131) is formed for electrical connection of the data link wiring 131 which is broken at the pad PA boundary. An auxiliary data link pattern 121 is formed of a material forming a second material.

In addition, the pad PA may be disposed through a link contact hole 126 exposing ends of the auxiliary data link pattern 121 provided in the interlayer insulating layer (not shown) covering the auxiliary data link pattern 121. The ends of the data link wires 131 broken on the basis of a boundary are formed to contact the auxiliary data link patterns 121 overlapping each other.

Due to this configuration, the array substrate 101 for the touch sensor in-cell type liquid crystal display according to the exemplary embodiment of the present invention is disposed at the boundary of the pad portion PA where the step difference is caused by the first protective layer 145 made of an organic insulating material. There is an effect that the short-circuit between the neighboring data link wiring 131 due to the residue left during the common electrode patterning is prevented.

Hereinafter, a cross-sectional structure of an array substrate for a touch sensor in-cell type liquid crystal display device according to an embodiment of the present invention having such a configuration will be described.

 FIG. 5 is a cross-sectional view of one pixel area including a portion in which a thin film transistor as a switching element is formed in an array substrate for a touch in-cell type liquid crystal display according to an exemplary embodiment of the present invention, and FIG. 7 is a cross-sectional view of the portion cut along the line VI, and FIG. 7 is a cross-sectional view of the portion cut along the cutting line VII-Ⅶ, and FIG. 8 is a touch in-cell type liquid crystal display device according to an embodiment of the present invention. In the array substrate, a cross-sectional view of a portion where the ends of the x-sensing wiring and the sensing auxiliary wiring, which face each other, are located in each touch block. For convenience of description, an area in which the thin film transistor Tr is formed in each pixel area P is defined as an element area TrA, and a plurality of pixel areas P is defined as one unit area as a touch block TB. Defined.

As shown, a buffer layer 105 made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is formed on the transparent substrate 101. In this case, when the transparent substrate 101 is made of glass, the semiconductor layer 110 of polysilicon may be affected by alkali ions emitted from the glass substrate 101 at a high temperature of 500 ° C. or higher. Since the deterioration of the operating characteristics of the thin film transistor (Tr) may occur it may be omitted to form to prevent this.

The element region TrA in each pixel region P is formed of pure polysilicon on the buffer layer 105, and a central portion thereof is formed on both sides of the first semiconductor region 113a and the first semiconductor region 113a. The semiconductor layer 113 including the second semiconductor region 113b doped with a high concentration of impurities is formed.

In addition, a gate insulating layer 116 formed of an inorganic insulating material is formed on the entire surface of the semiconductor layer 113.

The gate insulating layer 116 is formed of a metal material, for example, any one or two or more of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), and molybdenum (MoTi). It has a single layer or multilayer structure and is connected to correspond to the boundary of each pixel region P, extends in one direction, and a gate wiring (not shown) is formed. In this case, a sensing auxiliary wiring (not shown) is formed for each touch block TB on the gate insulating layer 116 to be spaced apart from the gate wiring (not shown).

Since the present invention is an array substrate 101 for a touch sensor in-cell tine liquid crystal display device, a touch sensor (not shown) should be provided. Since the touch sensor (not shown) generally responds to the touch of the user's finger, the touch sensor (not shown) is formed by dividing the plurality of pixel areas P into one unit, that is, the touch block TB without being formed in the pixel area P. will be.

Meanwhile, a gate electrode 120 having the same structure as the gate wiring (not shown) is formed on the gate insulating layer 116 to correspond to the first semiconductor region 113a of the semiconductor layer 113. have.

In addition, the non-display area NA outside the display area AA is connected to one end of the gate line (not shown) on the gate insulating layer 116 and has a gate link line (not shown). The pad part PA is connected to one end of the gate link line (not shown) in the area NA, and a gate pad electrode (not shown) is formed.

In addition, in the exemplary embodiment of the present invention, the non-display area NA and the pad part PA may correspond to a portion where the data link line 131 is to be formed on the gate insulating layer 116. Extends to the boundary of the first protective layer 145, and ends thereof are formed in a bar shape in the non-display area NA adjacent to the pad part PA and the display area AA, respectively. The auxiliary data link pattern 121 having is formed.

Next, an interlayer insulating film made of an inorganic insulating material on the entire surface of the gate electrode 120, the gate wiring (not shown), the gate link wiring (not shown), the gate pad electrode (not shown), and the auxiliary data link pattern 121. 123 is formed. In this case, a semiconductor layer contact hole exposing each of the second semiconductor regions 113b positioned on both sides of the first semiconductor region 113a may be formed in the interlayer insulating layer 123 and the gate insulating layer 116 disposed below the interlayer insulating layer 123. 125 and a link contact hole 126a for exposing both ends of the auxiliary data link pattern 121 in the interlayer insulating layer 123 in the non-display area NA and the pad part PA, respectively. 126b) is provided.

Next, an upper portion of the interlayer insulating layer 123 including the semiconductor layer contact hole 125 and the link contact holes 126a and 126b may be formed of a metal material such as aluminum (Al), aluminum alloy (AlNd), or copper (Cu). , A copper wire, molybdenum (Mo), or a molybdenum (MoTi) material of any one or two or more of the data wiring to define a pixel region (P) crossing the gate wiring (not shown) as a single layer or multilayer structure ( 130) is being formed. In this case, when the data line 130 has a multi-layer structure, a first layer including molybdenum (Mo) or molybdenum (MoTi), aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper alloy It is preferable to have a triple layer structure of a second layer made of any one and a third layer made of molybdenum (Mo) or molybdenum (MoTi). In the drawing, the data line 130 has a single layer structure as an example.

In addition, the device region TrA is in contact with the second semiconductor region 113b exposed through the semiconductor layer contact hole 125 and is made of the same material as the data line 130 on the interlayer insulating layer 123. Source and drain electrodes 133 and 136 having the same structure and spaced apart from each other are formed.

In this case, the semiconductor layer 113, the gate insulating layer 116, the gate electrode 120, the interlayer insulating layer 123, and the source and drain electrodes 133 and 136 sequentially stacked on the device region TrA may be spaced apart from each other. It forms a thin film transistor (Tr) that is a switching element.

The thin film transistor Tr is electrically connected to the gate line (not shown) and the data line 130. That is, the gate electrode 120 is connected to the gate line (not shown) and the source electrode 133 is connected to the data line 130.

In addition, in the non-display area NA, the data link wiring 131a connected to one end of the data line 130 on the interlayer insulating layer 123 and cut off at the boundary of the pad part PA. 131b overlaps the auxiliary data link pattern 121 and is formed in contact with the auxiliary data link pattern 121 through the link contact holes 126a and 126b.

In addition, the pad part PA contacts the auxiliary data link pattern 121 through the link contact hole 126b disposed on the pad part PA on the interlayer insulating layer 123. It is connected to one end of 131b and a data pad electrode 132 is formed.

Next, an organic insulating material such as photoacrylic or the like may be formed on the data line 130 and the source and drain electrodes 133 and 136 on the entire area of the display area and the non-display area NA except the pad part PA. The first protective layer 145 is formed of benzocyclobutene to form a flat surface. In this case, since the first protective layer 145 is not formed with respect to the pad part PA, the data pad electrode 132 and the data link wiring 131b connected thereto may be formed in the pad part PA. 145 is a state exposed to the outside.

In the related art, an auxiliary insulating layer made of an inorganic insulating material is formed on the data line and the source and drain electrodes, and a first protective layer made of the organic insulating material as described above is formed thereon. In this case, the use of an inorganic insulating material for forming an auxiliary insulating layer is continuously generated for the manufacture of the liquid crystal display, resulting in an increase in cost.

However, in the embodiment according to the present invention, it is possible to reduce the material cost by not forming such an auxiliary insulating layer. In this case, since the auxiliary insulating layer is omitted, the data line 130 and the source and drain electrodes 133 and 136 made of metal are in direct contact with the first protective layer 145 made of an organic insulating material. Since the organic insulating material, especially photoacryl, has advanced characteristics due to technological development and has excellent adhesive strength with a metal material, even if the auxiliary insulating layer made of an inorganic insulating material is omitted, there is no problem due to deterioration of bonding strength.

In the display area AA, the first passivation layer 145 is provided with a first drain contact hole 147 exposing the drain electrode 136 of the thin film transistor Tr and each touch block. The first sensing contact hole 148 exposing the interlayer insulating layer 123 corresponding to the end of each sensing auxiliary wiring 122 provided in the TB is provided.

Next, the transparent conductive material indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) over the first protective layer 145 having the first drain contact hole 147 and the first sensing contact hole 148. The common electrode 150 is formed to correspond to the display area AA.

In this case, the common electrode 150 is formed to expose the thin film transistor Tr by forming a first opening oa1 corresponding to the element region TrA in each pixel region P. Corresponding to the portion where the sensing contact hole 148 is formed, a second opening oa2 having a larger area than this is formed.

Furthermore, the common electrode 150 is formed in a patterned form for each touch block TB having a plurality of pixel regions P as a unit. In addition, the common electrode 150 is more accurately formed in the first and second regions (A1, A2, and A3 of FIG. 4) again in the touch block TB.

The same metal material forming the data line 130 on the common electrode 150 formed by patterning the touch block TB, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, Molybdenum (Mo), molybdenum (MoTi) of any one or two or more of the material is a single layer or multi-layer structure overlapping the gate wiring (not shown), x sensing wiring (xsl) is formed, the data wiring ( The y sensing wiring (ysl in FIG. 4) is formed to overlap with 130.

At this time, the x sensing wiring (xsl) and the y sensing wiring (ysl) in the form of a short is generated on the first, second and third regions (A1, A2, A3 in Fig. 4) in each touch block (TB). In each touch block TB, only the first and third regions A1 and A3 of FIG. 4 are electrically connected, and the second region A2 of FIG. 4 is electrically separated. Since the second region A2 of FIG. 4 has a configuration electrically connected only to the second region A2 of FIG. 5 in the neighboring touch block TB in the extending direction of the data line 130, each region (FIG. Even if the x sensing wiring xsl and y sensing wiring ysl are shorted in A1, A2, and A3, it does not matter.

The x sensing wiring xsl has a first sensing contact hole 148 in which the end of each of the touch blocks TB exposes the interlayer insulating layer 123 corresponding to the end of the sensing auxiliary wiring 122. ) It is located inside.

Next, the second protective layer 155 is formed as an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx), on the entire surface of the common electrode 150 and the x and y sensing wirings (xsl and ysl). It is being formed.

In this case, the second protective layer 155 is provided with a second drain contact hole 157 exposing the drain electrode 136 in the device region TrA, and the data in the pad part PA. A data pad contact hole 159 exposing the data pad electrode 132 is provided to correspond to the pad electrode 132.

In addition, the pad part PA is provided with a gate pad contact hole (not shown) which exposes the gate pad electrode (not shown) by patterning the second protective layer 155 and the interlayer insulating layer 123 together. The second protective layer 155 and the interlayer insulating layer 123 below are patterned together to correspond to the first sensing contact hole 148 in the touch block TB. A second sensing contact hole 158 for simultaneously exposing one end of the adjacent auxiliary sensing wiring 122 and one end of the x sensing wiring xsl is provided.

Next, the second drain contact hole 157 is formed on the second passivation layer 155 in each pixel region P of a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO). Each pixel electrode 160 in contact with the drain electrode 136 is formed. In this case, the pixel electrode 160 includes a plurality of bar-shaped third openings op3 to generate a fringe field together with the common electrode 150 when a driving voltage is applied.

In addition, in the pad part PA, each of the gate pad electrodes (not shown) is formed of the same material forming the pixel electrode 160 through the gate pad contact hole (not shown) on the second passivation layer 155. An auxiliary gate pad electrode (not shown) is formed in contact with the data pad, and the auxiliary data pad electrode 165 is formed in contact with the data pad electrode 132 through the data pad contact hole 159.

In addition, each touch block TB may have a connection pattern which simultaneously contacts one end of the sensing auxiliary wiring 122 and one end of the x sensing wiring xsl respectively exposed through the second sensing contact hole 158. The array substrate 101 for the touch sensor in-cell type liquid crystal display device according to the exemplary embodiment of the present invention is completed by providing 163 in an island form.

By this configuration, the x sensing wiring xsl is substantially electrically disconnected from the y sensing wiring ysl in the first, second and third regions (A1, A2 and A3 in FIG. 4) within each touch block TB. Will be connected.

In this case, the pixel electrode 160 and the common electrode 150 provided in each pixel region P are formed to overlap each other through the second passivation layer 155, and the common electrode 150 overlaps with each other. ), The second passivation layer 155, and the pixel electrode 160 form a storage capacitor.

Hereinafter, a method of manufacturing an array substrate for a touch sensor in-cell type liquid crystal display device having the above-described configuration will be described.

9A through 9J are cross-sectional views illustrating manufacturing processes of one pixel area including a portion in which a thin film transistor as a switching element is formed in an array substrate for a touch in-cell type liquid crystal display according to an exemplary embodiment of the present invention. FIG. 3 is a cross-sectional view illustrating manufacturing steps of the part cut along the cutting line VI-VI, and FIGS. 11A to 11J are cross-sectional views illustrating the manufacturing step of the part taken along the cutting line VI-VI of FIG. 3, and FIG. 12A through 12J are cross-sectional views illustrating manufacturing steps of portions of the touch in-cell type liquid crystal display array substrate according to an exemplary embodiment of the present invention, in which the ends of the x-sensing wiring and the sensing auxiliary wiring are located within each touch block.

First, as shown in FIGS. 9A, 10A, 11A, and 12A, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the transparent substrate 101 to form a buffer layer 105. do.

When the amorphous silicon is recrystallized from polysilicon, the buffer layer 105 is formed of alkali ions, for example, potassium ions (K +) and sodium ions, which are present in the substrate 101 due to heat generated by laser irradiation or heat treatment. (Na +) and the like may occur, in order to prevent the film properties of the semiconductor layer made of polysilicon from being deteriorated by such alkali ions. In this case, the buffer layer 105 may be omitted.

Next, pure amorphous silicon is deposited on the buffer layer 105 to form a pure amorphous silicon layer (not shown), an Excimer Laser Annealing (ELA) method, a sequential lateral solidification (SLS) crystallization method, and a thermal crystallization method using an excimer laser. The crystallization of the amorphous silicon layer (not shown) to a polysilicon layer (not shown) by performing a crystallization process of any one of Alternating Magnetic Field Crystallization (AMFC).

Subsequently, the polysilicon layer (not shown) is patterned by performing a mask process to form semiconductor layers 113 in pure polysilicon states in the element regions TrA in the pixel regions P, respectively.

Next, as shown in FIGS. 9B, 10B, 11B, and 12B, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the semiconductor layer 113 of pure polysilicon. 116 is formed.

Next, one or more materials of a metal material, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), and molybdenum (MoTi) on the gate insulating layer 116. As a first metal layer (not shown) having a single layer or multilayer structure is formed.

Subsequently, the first metal layer (not shown) is patterned by a mask process to form gate electrodes 120 corresponding to central portions of the semiconductor layers 113, respectively, and at the same time, the pixels on the gate insulating layer 116. A gate wiring (not shown) connected to the gate electrode 120 formed in the device region TrA at a boundary of the region P and extending in one direction, and the gate wiring (not shown) for each touch block TB; Side-by-side spaced apart to form the sensing auxiliary wiring 122.

Although not shown in the drawing, a gate link wiring (not shown) connected to one end of the gate wiring (not shown) is formed in the non-display area NA, and at the same time, non-display adjacent to the display area (not shown). An auxiliary data link pattern 121 is formed to correspond to an area extending from the area NA to the pad part PA and overlapping a data link wiring formed later.

In addition, a gate pad electrode (not shown) connected to one end of the gate link wiring (not shown) is formed in the pad part PA.

Next, as shown in FIGS. 9C, 10C, 11C, and 12C, the gate electrode of the semiconductor layer 113 is doped by doping impurities on the entire surface of the substrate 101 using the gate electrodes 120 as blocking masks. The second semiconductor region 113b doped with the impurity is formed in a portion located outside the 120, and the portion corresponding to the gate electrode 120 where the doping of the impurity is prevented is blocked by the first semiconductor of pure polysilicon. The area 113a is formed.

Next, as shown in FIGS. 9D, 10D, 11D, and 12D, an inorganic insulating material such as silicon nitride (SiNx) is formed on the entire surface of the semiconductor layer 113 divided into the first and second semiconductor regions 113a and 113b. ) Or silicon oxide (SiO ₂ ) is deposited to form an interlayer insulating film 123 on the entire surface.

Subsequently, in the display area, the semiconductor layer contact hole 125 which exposes the second semiconductor region 113b of each semiconductor layer 113 by simultaneously patterning the interlayer insulating layer 123 and the gate insulating layer 116 thereunder. ), And in the non-display area NA and the pad part PA, the interlayer insulating layer 123 is patterned to expose the ends of the auxiliary data link pattern 121, respectively, for the link contact holes 126a and 126b. To form.

Next, as illustrated in FIGS. 9E, 10E, 11E, and 12E, a metal material, for example, aluminum (Al) is disposed on the interlayer insulating layer 123 including the semiconductor contact hole 125 and the link contact holes 126a and 126b. ), An aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum (MoTi) material of any one or two or more to form a second metal layer (not shown) of a single layer or multilayer structure do.

Thereafter, the second metal layer (not shown) is patterned to pattern the source and drain electrodes in contact with the second region 113b through the semiconductor layer contact hole 125 and spaced apart from each other in the device region TrA. Form 133, 136. In this case, the source and drain electrodes spaced apart from the semiconductor layer 113, the gate insulating layer 116, the gate electrode 120, and the interlayer insulating layer 123 provided in the device region TrA in the pixel region P. Reference numerals 133 and 136 form a thin film transistor Tr which is a switching element.

At the same time, a data line 130 is formed on the interlayer insulating layer 123 and connected to the source electrode 133 formed in the device region TrA at the boundary of the pixel region P and intersects the gate line (not shown). do.

In the non-display area NA, a second data link line 131a connected to one end of the data line 130 is spaced apart from the first data link line 131a on the interlayer insulating layer 123. A data link wiring 131b is formed, and a data pad electrode 132 connected to one end of the second data link wiring 131b is formed on the interlayer insulating layer 123 in the pad part PA.

In this case, the auxiliary data link pattern is formed through the first link contact hole 126a having one end thereof positioned in the non-display area NA adjacent to the display area AA. It is in contact with 121. In addition, the second data link wiring 131b spaced apart from the first data link wiring 131a and the auxiliary data link pattern 121 has the other end thereof located at the pad portion PA. The auxiliary data link pattern 121 is contacted with the contact hole 126b.

Therefore, the data line 130, the first data link line 131a, the auxiliary data link pattern 121, the second data link line 131b, and the data pad electrode 132 are electrically connected by this configuration. .

Next, as shown in FIGS. 9F, 10F, 11F, and 12F, the thin film transistor Tr, the data wire 130, the first and second data link wires 131a and 131b, and the data pad electrode 132 are displayed on the top surface. An organic insulating material such as photo acryl or benzocyclobutene (BCB) is coated on the entire surface of the region except for the pad portion PA of the non-display area NA, and has a flat surface. The protective layer 145 is formed.

Therefore, the first protective layer 145 forms a step at the boundary of the pad part PA.

Subsequently, a mask process is performed on the first passivation layer 145 to pattern the first drain contact hole 147 exposing the drain electrode 136 in each device region TrA. A first sensing contact hole 148 is formed in each touch block TB to expose the interlayer insulating layer 123 corresponding to one end of the sensing auxiliary wiring 122.

Next, as illustrated in FIGS. 9G, 10G, 11G, and 12G, a transparent conductive material, for example, is disposed over the first protective layer 145 having the first drain contact hole 147 and the first sensing contact hole 148. Indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) is deposited on the front surface and patterned to form a common electrode 150 having a shape spaced apart by each touch block TB.

In this case, the common electrode 150 has a first opening oa1 in each device region TrA, and a portion in which both ends of the sensing auxiliary line 122 are positioned, that is, the first sensing contact hole 148. Corresponding to the formed portion is formed to have a second opening (oa2) having a larger area than the first sensing contact hole 148.

This prevents a short between the pixel electrode 160 and the common electrode 150 contacting the drain electrode 136 through the second drain contact hole 157 and simultaneously forms a second sensing contact hole (not shown). This is to prevent a short between the connection pattern (not shown) for electrically connecting the sensing auxiliary line 122 and the x sensing line (xsl) through the common electrode 150.

Next, as shown in FIGS. 9H, 10H, 11H, and 12H, a metal material, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, and molybdenum (Mo) is disposed on the common electrode 150. ), Or a third metal layer (not shown) having a single layer or a multilayer structure as one or two or more materials of molybdenum (MoTi).

Subsequently, the third metal layer (not shown) is patterned to have a planar shape as described with reference to FIG. 4, and the x sensing wiring (xsl) and y sensing overlapping the gate wiring (not shown) and the data wiring 130, respectively. A wiring ysl is formed.

In this case, the x-sensing wiring xsl has a form disconnected for each touch block TB, and an end of the disconnected portion is bent if necessary so that the sensing auxiliary wiring 122 is formed inside the first sensing contact hole 148. It is characterized in that it is formed adjacent to the end of the).

In the embodiment of the present invention, when the x and y sensing wirings (xsl, ysl) are formed, the first protective layer 145 is not formed or removed in the process of exposing the etching solution for patterning the exposed parts. For example, the drain electrode 136, the data link wiring 131, and the data pad electrode 132 completely overlap the components, and the conductive etch preventing pattern 151 and the first auxiliary pad pattern 152 may be formed. Since each component is not exposed to the etchant for patterning the x and y sensing wirings (xsl and ysl), damage is caused by the etchant without forming an auxiliary insulation layer made of a separate inorganic insulating material as in the prior art. It is characterized by being able to prevent.

Next, as shown in FIGS. 9I, 10i, 11i and 12i, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is formed on the x sensing wiring (xsl) and the y sensing wiring (ysl). The second protective layer 155 is formed on the entire display area and the non-display area NA by deposition.

Thereafter, the second protective layer 155 is patterned to form a second drain contact hole 157 connected to the first drain contact hole 147 to expose the drain electrode 136, and the pad part PA ), A data pad contact hole 159 exposing the data pad electrode 132 is formed.

At the same time, in the portion corresponding to the first sensing contact hole 148 and the pad part PA, the first sensing is formed by patterning the second protective layer 155 together with the interlayer insulating layer 123 disposed thereunder. In response to the contact hole 148, the second sensing unit simultaneously exposes one end of the sensing auxiliary wiring 122 and one end of the x sensing wiring xsl adjacent thereto in the first sensing contact hole 148. A contact hole 158 is formed, and a gate pad contact hole (not shown) that exposes the gate pad electrode (not shown) is formed to correspond to the gate pad electrode (not shown).

Next, as illustrated in FIGS. 9J, 10J, 11J, and 12J, the second drain contact hole 157, the gate and data pad contact hole (not shown) 159, and the second sensing contact hole 158 are provided. A transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), is deposited on the second protective layer 155 to form a transparent conductive material layer (not shown).

Thereafter, the transparent conductive material layer (not shown) is patterned to form the pixel electrode 160 in contact with the drain electrode 136 through the second drain contact hole 157 in each pixel region P. Referring to FIG.

In addition, at the same time, one end of the sensing auxiliary wiring 122 and the x sensing wiring adjacent thereto are respectively located in the first and second sensing contact holes 148 and 158 connected to each other in the touch blocks TB. A connection pattern 163 is formed in contact with one end of the same.

In addition, in the pad part PA, an auxiliary gate pad electrode (not shown) contacting the gate pad electrode (not shown) is formed through the gate pad contact hole (not shown), and at the same time, the data pad contact hole (not shown) is formed. By forming the auxiliary data pad electrode 165 in contact with the data pad electrode 132 through 159, the array substrate 101 for a touch sensor in-cell type liquid crystal display device according to an exemplary embodiment of the present invention is completed.

In this case, each of the pixel electrodes 160 has a plurality of third openings oA3 having a bar shape spaced apart from each other in the pixel region P to form a fringe field with the common electrode 150 disposed below the pixel electrode 160. It is characterized in that it is formed to have.

Thus completed, the touch sensor in-cell type liquid crystal display array substrate 101 according to the embodiment of the present invention includes a color filter substrate (not shown) and a liquid crystal layer (not shown) to form a liquid crystal display device (not shown). Then, the X-direction sensing circuit (not shown) and the Y-direction sensing so as to be connected to the x sensing wiring (xsl in Figure 5) and the y sensing wiring (ysl), respectively, at the ends of the touch block (TB) arranged in the horizontal and vertical directions, respectively. When a touch is generated in the display area AA by mounting a circuit (not shown), the touch is sensed by changing the capacitance generated between the common electrode 150 and the pixel electrode 160, and then changed into a voltage form to sense the x sensing wiring. (Xsl in FIG. 5) and y sensing wiring (ysl) are transferred to the X direction sensing circuit (not shown) and the Y direction sensing circuit (not shown), respectively, and a touch is generated in the display area AA by such driving. The location of the touched part Less will be conducted.

101: (array) substrate
121: secondary data link pattern
126 (126a, 126b): (first and second) link contact holes
131 (131a, 131b): (first and second) data link wiring
132: data pad electrode
145: first protective layer
159: data pad contact hole
165: auxiliary data pad electrode
PA: Pad
NA: non-display area

Claims (21)

A display area having a plurality of pixel areas and a non-display area having a pad portion outside thereof are defined, and a boundary of each pixel area on a substrate having a plurality of touch blocks defining a plurality of pixel areas as a group in the display area. A gate and a data line formed to intersect each other via a first insulating film;
A thin film transistor formed in each pixel region and connected to the gate and the data line;
A first protective layer formed of an organic insulating material and having a first drain contact hole exposing a drain electrode of the thin film transistor over the thin film transistor;
A common electrode formed to be spaced apart from each touch block on the first passivation layer;
An x sensing wiring formed on the common electrode to overlap the gate wiring and a y sensing wiring formed on the common electrode and overlapping the data wiring;
A second passivation layer formed on the entire surface of the substrate over the common electrode, the x sensing wiring, and the y sensing wiring, and having a second drain contact hole exposing the drain electrode;
A pixel electrode contacting the drain electrode through the second drain contact hole on the second passivation layer and formed in each pixel region, and having a plurality of bar-shaped openings;
And an auxiliary data link pattern formed on the same layer in which the gate wiring is formed in the non-display area and the pad part, and the first insulating layer to expose first and second ends of the auxiliary data link pattern, respectively. A first data link line provided with a second link contact hole, the first data link line connected to the data line on the layer on which the data line is formed, and contacting the auxiliary data link pattern through the first link contact hole; And a second data link wire contacting the auxiliary data link pattern through a link contact hole.
The method of claim 1,
Each of the touch blocks is connected by an adjacent touch block in the extending direction of the gate wiring by the x sensing wiring,
Each of the touch blocks includes a first and a third area spaced apart from each other, and a second area connected between the first and third areas by the y-sensing wire and a touch block neighboring in an extension direction of the data line.
And wherein the common electrode is separately formed for each of the first, second, and third regions in each of the touch blocks.
The method of claim 2,
The x-sensing wirings formed in the first and third regions within the touch block are formed to be separated from each other at a boundary between the first region and the second region and at a boundary between the second region and the third region. Array substrate for touch sensor in-cell type liquid crystal display.
The method of claim 3, wherein
The gate electrode is formed under the first insulating film, and the data line is formed over the first insulating film.
A sensing auxiliary wiring formed for each touch block by the same material on a layer having the gate wiring formed on the first insulating layer in parallel with the gate wiring;
And the x sensing wiring and the sensing auxiliary wiring are connected to each other in the touch block.
The method of claim 4, wherein
The first passivation layer includes a first contact hole exposing the first insulating layer corresponding to an end of the x sensing wiring for each touch block.
The second protective layer is provided with a second contact hole exposing the end of the x sensing wiring in the first contact hole,
The first insulating layer may include a third contact hole exposing an end of the sensing auxiliary line in a form in which the first contact hole extends.
Touch sensor in-cell, characterized in that the end of the x-sensing wiring exposed through the second and third contact holes connected to each other and the end of the sensing auxiliary wiring is in contact with the connection pattern made of the same material constituting the pixel electrode Array substrate for liquid crystal display device.
The method of claim 5, wherein
The common electrode has a first opening corresponding to a portion where the thin film transistor is formed, and a second opening having a larger area corresponding to the first contact hole is formed in the touch sensor in-cell type liquid crystal display device. Array substrate.
The method according to claim 6,
The touch blocks formed on the same line in the extension direction of the gate wiring among the touch blocks are all electrically connected by the x sensing wiring.
And the touch blocks formed on the same line in the extension direction of the data line among the touch blocks are electrically connected to each other by the y sensing wiring.
The method of claim 1,
In the non-display area, a gate link wiring connected to the gate wiring is formed on the same layer on which the gate wiring is formed, and a gate pad electrode connected to the gate link wiring is formed in the pad part.
In the pad part, a data pad electrode connected to the second data link wire is formed on the same layer on which the data wire is formed,
And the first protective layer is formed while exposing the pad part.
The method of claim 8,
The second passivation layer includes a data pad contact hole for exposing the data pad electrode.
A gate pad contact hole exposing the gate pad electrode is provided in the second protective layer and the first insulating layer;
An auxiliary data pad electrode contacting the data pad electrode through the data pad contact hole with the same material forming the pixel electrode on the second passivation layer; and an auxiliary data pad contacting the gate pad electrode through the gate pad contact hole An array substrate for a touch sensor in-cell type liquid crystal display device, wherein a gate pad electrode is formed.
The method of claim 1,
The thin film transistor includes a semiconductor layer including a first semiconductor region of pure polysilicon and a second semiconductor layer of polysilicon doped with impurities on both sides thereof in a stacked form on a second insulating layer, a gate insulating layer, and the first A first insulating film having a gate electrode corresponding to the semiconductor region, a semiconductor layer contact hole exposing the second semiconductor region, and a source electrode and a drain electrode spaced apart from each other and in contact with the second semiconductor region, respectively. An array substrate for a touch sensor in-cell type liquid crystal display device.
The method according to any one of claims 1, 5 and 8,
And the common electrode and the pixel electrode are made of a transparent conductive material.
A display layer having a plurality of pixel regions and a non-display region defined outside thereof, and having a touch block having a plurality of pixel regions as a group within the display region, the first insulating layer is formed at the boundary of each pixel region on the substrate. Forming a gate wiring and a data wiring crossing each other and a thin film transistor connected to the two wirings through the gap;
Forming a first protective layer formed of an organic insulating material over the thin film transistor and having a first drain contact hole exposing the drain electrode of the thin film transistor over the thin film transistor and exposing the pad part;
Forming a common electrode spaced apart from each touch block on the first passivation layer;
Forming an x sensing wiring overlapping the gate wiring and a y sensing wiring overlapping the data wiring on the common electrode;
Forming a second passivation layer having a second drain contact hole connected to the first drain contact hole and exposing the drain electrode on a front surface of the common electrode, the x sensing wiring, and the y sensing wiring;
Forming a pixel electrode in contact with the drain electrode through the second drain contact hole on the second passivation layer and having a plurality of bar-shaped openings in each pixel region;
The forming of the gate line may include forming an auxiliary data link pattern in the non-display area and the pad portion. The forming of the first insulating layer may further include exposing both ends of the auxiliary data link pattern. And forming first and second link contact holes, wherein forming the data wires comprises: first data link wires connected to the data wires and in contact with the auxiliary data link pattern through the first link contact holes; And forming a second data link wire contacting the auxiliary data link pattern through the second link contact hole to be spaced apart from the second contact link hole.
13. The method of claim 12,
Each of the touch blocks is connected by an adjacent touch block in the extending direction of the gate wiring by the x sensing wiring,
Each of the touch blocks includes a first and a third area spaced apart from each other, and a second area connected between the first and third areas by the y-sensing wire and a touch block neighboring in an extension direction of the data line.
The common electrode may be separately formed in each of the first, second, and third regions of each of the touch blocks.
The method of claim 13,
The x-sensing wirings formed in the first and third regions in the touch block may be formed to be spaced apart from each other at the boundary between the first and second regions and at the boundary between the second and third regions. Method of manufacturing an array substrate for an in-touch sensor in-cell type liquid crystal display device.
15. The method of claim 14,
The gate electrode is formed under the first insulating film, and the data line is formed over the first insulating film.
The forming of the gate wiring may include forming a sensing auxiliary wiring for each touch block in parallel with the gate wiring on the first insulating layer.
And forming the x-sensing wiring and the sensing auxiliary wiring in each of the touch blocks.
The method of claim 15,
The forming of the first protective layer may include a first contact hole for exposing the first insulating layer corresponding to the end of the x sensing wiring for each touch block.
The forming of the second protective layer may include a second contact hole for exposing an end of the x sensing wiring inside the first contact hole.
The forming of the first insulating layer may include a third contact hole exposing an end of the sensing auxiliary line in a form in which the first contact hole is extended.
The forming of the pixel electrode may include forming a connection pattern which simultaneously contacts an end of the x sensing wiring and an end of the sensing auxiliary wiring exposed through the second and third contact holes connected to each other. A method of manufacturing an array substrate for a touch sensor in-cell type liquid crystal display device.
17. The method of claim 16,
The common electrode may have a first opening corresponding to a portion where the thin film transistor is formed, and a second opening having a larger area corresponding to the first contact hole may be provided. Method of manufacturing an array substrate for an apparatus.
The method of claim 17,
The touch blocks formed on the same line in the extension direction of the gate wiring among the touch blocks are all electrically connected by the x sensing wiring.
And a touch block formed on the same line in an extension direction of the data line among the touch blocks so as to be electrically connected to each other by the y sensing wiring.
13. The method of claim 12,
The forming of the gate wiring may include forming a gate link wiring connected to the gate wiring in the non-display area and simultaneously forming a gate pad electrode connected to the gate link wiring in the pad portion.
The forming of the data line may include forming a data pad electrode connected to the second data link line in the pad part.
The method of claim 19,
The forming of the second passivation layer may include exposing the gate pad electrode by simultaneously patterning a data pad contact hole exposing the data pad electrode and the first insulating layer disposed below the second passivation layer. Forming a gate pad contact hole;
The forming of the pixel electrode may include: an auxiliary data pad electrode contacting the data pad electrode through the data pad contact hole on the second passivation layer; and contacting the gate pad electrode through the gate pad contact hole. A method of manufacturing an array substrate for a touch sensor in-cell type liquid crystal display device, comprising forming an auxiliary gate pad electrode.
13. The method of claim 12,
Forming the thin film transistor,
Forming a pure amorphous silicon layer on the first insulating film;
Crystallizing the pure amorphous silicon layer with a polysilicon layer;
Patterning the polysilicon layer to form a semiconductor layer of polysilicon;
Forming a gate insulating film over the semiconductor layer of polysilicon;
Forming a gate electrode connected to the gate wiring at a central portion of the semiconductor layer of polysilicon over the gate insulating layer;
Performing impurity doping using the gate electrode as a doping mask to change the semiconductor layer of a portion exposed to the outside of the gate electrode into an impurity polysilicon layer;
Forming a first insulating film on the gate electrode, the first insulating film having a semiconductor layer contact hole to expose the semiconductor layer of the impurity polysilicon on both sides of the gate electrode;
Forming a source electrode and a drain electrode on the first insulating layer, the source electrode and the drain electrode respectively contacting the semiconductor layer of the impurity polysilicon through the semiconductor layer contact hole.
Method of manufacturing an array substrate for a touch sensor in-cell type liquid crystal display device comprising a.

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