KR20120091218A - 패턴화된 주입을 위한 스텝화된 마스킹 - Google Patents

패턴화된 주입을 위한 스텝화된 마스킹 Download PDF

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Publication number
KR20120091218A
KR20120091218A KR1020127012636A KR20127012636A KR20120091218A KR 20120091218 A KR20120091218 A KR 20120091218A KR 1020127012636 A KR1020127012636 A KR 1020127012636A KR 20127012636 A KR20127012636 A KR 20127012636A KR 20120091218 A KR20120091218 A KR 20120091218A
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KR
South Korea
Prior art keywords
substrate
mask
openings
pattern
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020127012636A
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English (en)
Korean (ko)
Inventor
벤자민 비. 리오돈
니콜라스 피. 티. 베이트맨
찰스 티. 칼슨
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20120091218A publication Critical patent/KR20120091218A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Prostheses (AREA)
KR1020127012636A 2009-10-19 2010-10-19 패턴화된 주입을 위한 스텝화된 마스킹 Withdrawn KR20120091218A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US25274409P 2009-10-19 2009-10-19
US61/252,744 2009-10-19
US12/906,369 US8173527B2 (en) 2009-10-19 2010-10-18 Stepped masking for patterned implantation
US12/906,369 2010-10-18

Publications (1)

Publication Number Publication Date
KR20120091218A true KR20120091218A (ko) 2012-08-17

Family

ID=43413803

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127012636A Withdrawn KR20120091218A (ko) 2009-10-19 2010-10-19 패턴화된 주입을 위한 스텝화된 마스킹

Country Status (7)

Country Link
US (2) US8173527B2 (https=)
EP (1) EP2491578B1 (https=)
JP (1) JP2013508953A (https=)
KR (1) KR20120091218A (https=)
CN (1) CN102687245A (https=)
TW (1) TW201120946A (https=)
WO (1) WO2011049950A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150053552A (ko) * 2013-11-08 2015-05-18 엘지전자 주식회사 마스크 조립체 및 이를 이용한 태양 전지의 제조 방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8101927B2 (en) * 2009-06-08 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Masking apparatus for an ion implanter
US20110027463A1 (en) * 2009-06-16 2011-02-03 Varian Semiconductor Equipment Associates, Inc. Workpiece handling system
US8008176B2 (en) * 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
US8173527B2 (en) * 2009-10-19 2012-05-08 Varian Semiconductor Equipment Associates, Inc. Stepped masking for patterned implantation
US8461030B2 (en) * 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces
US9023722B2 (en) * 2011-05-13 2015-05-05 Varian Semiconductor Equipment Associates, Inc. Compound semiconductor growth using ion implantation
US8658458B2 (en) * 2011-06-15 2014-02-25 Varian Semiconductor Equipment Associates, Inc. Patterned doping for polysilicon emitter solar cells
US9190548B2 (en) 2011-10-11 2015-11-17 Varian Semiconductor Equipment Associates, Inc. Method of creating two dimensional doping patterns in solar cells
TWI517430B (zh) 2013-12-31 2016-01-11 東旭能興業有限公司 太陽能電池單元及其製造方法
CN104538307B (zh) * 2014-12-19 2018-07-06 深圳市华星光电技术有限公司 一种用于制作多晶硅薄膜晶体管的方法
US20200227583A1 (en) * 2016-10-21 2020-07-16 Sunpower Corporation Solar cell emitter region fabrication apparatus
US10157980B1 (en) * 2017-10-25 2018-12-18 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device having diode devices with different barrier heights and manufacturing method thereof
EP3900020A4 (en) * 2018-12-17 2022-12-28 Applied Materials, Inc. METHOD OF MAKING DEVICES ON A SUBSTRATE
TWI730548B (zh) 2018-12-17 2021-06-11 美商應用材料股份有限公司 用於光學設備製造的電子束裝置
JP7634076B2 (ja) * 2021-02-26 2025-02-20 京セラ株式会社 テンプレート基板並びにその製造方法および製造装置、半導体基板並びにその製造方法および製造装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968660A (https=) * 1972-11-04 1974-07-03
JPS4979457A (https=) * 1972-12-04 1974-07-31
JPS63136618A (ja) * 1986-11-28 1988-06-08 Sony Corp エネルギ−照射方法
JP2837743B2 (ja) * 1990-06-27 1998-12-16 富士通株式会社 荷電粒子ビーム露光方法およびそれに用いるステンシルマスク
JPH08213339A (ja) * 1995-02-02 1996-08-20 Hitachi Ltd イオン注入方法およびその装置
JP4363694B2 (ja) 1998-04-17 2009-11-11 株式会社東芝 イオン注入装置および半導体装置の製造方法
US6335534B1 (en) * 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
JP2004349508A (ja) * 2003-05-22 2004-12-09 Applied Materials Inc 基体処理方法、マスク部材セット、基体処理装置、素子又は半導体装置の製造方法、及び、素子又は半導体装置の製造条件決定方法
JP4112472B2 (ja) * 2003-10-21 2008-07-02 株式会社東芝 半導体装置の製造方法及び半導体装置の製造装置
US7394073B2 (en) 2005-04-05 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam angle measurement in two dimensions
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US8749053B2 (en) * 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US8008176B2 (en) * 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
US8173527B2 (en) * 2009-10-19 2012-05-08 Varian Semiconductor Equipment Associates, Inc. Stepped masking for patterned implantation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150053552A (ko) * 2013-11-08 2015-05-18 엘지전자 주식회사 마스크 조립체 및 이를 이용한 태양 전지의 제조 방법

Also Published As

Publication number Publication date
US20120196430A1 (en) 2012-08-02
WO2011049950A1 (en) 2011-04-28
EP2491578A1 (en) 2012-08-29
CN102687245A (zh) 2012-09-19
US20110256698A1 (en) 2011-10-20
TW201120946A (en) 2011-06-16
US8569157B2 (en) 2013-10-29
EP2491578B1 (en) 2015-04-22
US8173527B2 (en) 2012-05-08
JP2013508953A (ja) 2013-03-07

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Legal Events

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000