KR20120076174A - Liquid crystal display device having column spacer and manufacturing method thereof - Google Patents

Abstract

PURPOSE: A liquid crystal display device with a column spacer and a manufacturing method thereof are provided to prevent the mismatch between a column spacer and a protrusion. CONSTITUTION: A first substrate includes at least one column spacer. The column spacer is formed on a color filter. Gate lines(122) and data lines(172) define a plurality of pixel areas. Thin film transistors are formed at every pixel area. A protrusion part of a second substrate(100) supports the column spacer. A depression part is formed on the central portion of the column spacer wherein the protrusion part is inserted into the depression part.

Description

Liquid crystal display having a column spacer and a method of manufacturing the same {LIQUID CRYSTAL DISPLAY DEVICE HAVING COLUMN SPACER AND MANUFACTURING METHOD THEREOF}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device having at least one column spacer for preventing staining by pressing and maintaining a cell gap, and a manufacturing method thereof.

A liquid crystal display device is an electronic information display device that realizes an image by using optical anisotropy and birefringence characteristics of a liquid crystal interposed between two substrates bonded to each other by a predetermined distance.

1 is a view showing a portion of a substrate of a conventional liquid crystal display device. In the following description, an example of a transverse electric field type liquid crystal display device in which an electric field is applied in a horizontal direction will be described.

As illustrated, a substrate of a conventional liquid crystal display device may include a substrate of a conventional transverse electric field type liquid crystal display device having a gate space 22 extending in one direction on the substrate 10 and spaced apart in parallel thereto. The first and second common wirings 54a and 54b are formed.

In addition, the data wiring 72 is formed in a direction crossing the gate wiring 22 and the first and second common wirings 54a and 54b, and the first and second common wirings 54a and 54b and the data wiring ( 72 intersect to define the pixel region P. FIG.

At the intersection of the gate wiring 22 and the data wiring 72, the gate electrode 24 which is a part of the gate wiring 22, the active layer 40 positioned on the gate electrode 24, and the active layer A thin film transistor TFT formed of a source electrode 42 and a drain electrode 44 spaced apart from each other and positioned above the 40 is positioned.

Both sides of the pixel region P are formed of the same material as the first and second common lines 54a and 54b described above, and the first and second common lines 54a and 54b are formed on both sides of the pixel region P. The first common electrode 81 is vertically connected to each other, and the rod-shaped transparent second common electrode 82 extends vertically in contact with the second common wire 54b in the center area of the pixel area P. ) Is configured.

In addition, the pixel electrode 80 is formed between the second common electrode 82, and the pixel electrode 80 has a transparent bar shape extending from the lead portion 68 contacting the drain electrode 44.

Here, the first common wiring 54 a and the lead portion 68 at the upper portion together with the insulating film interposed between the two components form the storage capacitor portion Cst.

The color filter substrate (not shown) bonded to the upper portion of the transverse electric field-type substrate 10 having the above-described structure has a gap spacer 91 for maintaining a spaced gap, and a pressing spacer 92 for preventing the pressing. ) Is placed.

The pressing spacer 92 serves to prevent light leakage defects caused by pressing applied to the liquid crystal panel from the outside.

In detail, when an external force such as pressing from the outside is applied to the liquid crystal panel, light leakage defects are generated, and such light leakage is caused by slippage between the substrate 10 and the color filter substrate due to the external force and thus the liquid crystal panel is warped. This is due to the occurrence.

That is, the rubbing directions of the substrate 10 and the color filter substrate are not parallel to each other in the bending direction of the liquid crystal panel, and the liquid crystals adjacent to the substrate surface are arranged in parallel in the X direction, thereby making a totally different arrangement from the initial state.

In such a case, the arrangement of the liquid crystals does not maintain an initial black state, and the light passing through the liquid crystal layer rotates while undergoing a retardation different from that of the normal portion, resulting in light leakage.

In addition, since the gap spacer 91 functions to maintain the spaced gap between the two substrates, the gap spacer 91 should be configured to contact the two substrates, and the pressing spacer 92 should be spaced apart from any one of the two substrates. do.

The gap spacer 91 and the pressing spacer 92 are advantageous in terms of process rather than being manufactured in a separate process, and it is advantageous to position the gap spacer 91 and the pressed spacer 92 in another region instead of the pixel region. It is advantageous.

Therefore, the step difference between the region where the thin film transistor TFT is positioned and the region where the gate wiring 22 or the common wiring 54a and 54b are located is used. In particular, the gap spacer 91 is positioned so as to correspond to the thin film transistor TFT. In addition, it is preferable that the pressing spacers 92 are positioned corresponding to the gate wirings or the common wirings 22, 54a, and 54b.

Hereinafter, with reference to the cross-sectional view, the configuration of the above-described gap spacer and the pressing spacer will be described in more detail.

FIG. 2 is a cross-sectional view taken along lines II-II and III-III of the liquid crystal display of FIG. 1.

As shown, the liquid crystal display device 30 is bonded to the array substrate 10 having the above-described substrate structure and the color filter substrate 90 positioned above the liquid crystal (not shown).

Here, the color filter substrate 90 includes color filters 94a, 94b, 94c, a black matrix 96, a planarization film, a gap spacer 91, and a depression spacer 92.

In this case, a step is generated between the region where the thin film transistor TFT is formed and the region where the gate wiring 22 is located. In order to use the step, the active layer 40a of the thin film transistor TFT and the source and drain electrodes ( During the process of forming the 42 and 44, a protrusion in which the semiconductor pattern 40b and the source / drain metal pattern 47 are stacked is formed on a portion of the gate wiring 22.

In addition, the pressing spacer 92 may be configured to correspond to the common wiring 54a or the gate wiring 22.

According to this structure, the gap spacer 91 can be firmly fixed to the projection so that friction between the gap spacer 91 and the projection period does not occur.

However, when a larger external force is applied to the liquid crystal display device, the above-described structure alone cannot prevent misalignment of the gap spacer and the projection due to the shaking of the substrate, and the gap between the gap spacer and the projection due to the external force is continuously maintained. As a result, it is difficult to completely improve a stain defect appearing on the screen in the conventional liquid crystal display device structure.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a liquid crystal display device having a structure capable of fixing the column spacer and the protrusions more firmly in the liquid crystal display device having the column spacer, and a method of manufacturing the same. have.

In addition, another object of the present invention is to provide a liquid crystal display device having a column spacer having a strong supporting force against strong vibrations and impacts applied from the outside, and a method of manufacturing the same.

In order to achieve the above object, a liquid crystal display device having a column spacer according to a preferred embodiment of the present invention, the color filter formed to correspond to a plurality of pixel areas; And a first substrate including at least one column spacer configured on the color filter. A plurality of gate lines and data lines defining the plurality of pixel areas at points perpendicular to each other; A thin film transistor formed in each of the plurality of pixel regions; And a second substrate formed at a position corresponding to the column spacer in one region of the gate wiring, and having a contact surface divided into at least two parts to support the column spacer.

The column spacer is characterized in that the center portion is formed with a depression of one depth in which the projection is inserted.

The protrusion is characterized in that the same layer and the same material as the data wiring.

In order to achieve the above object, a liquid crystal display device according to a preferred embodiment of the present invention, a plurality of pixel areas for displaying an image is defined, the display area divided into a first area of the outside and a second area of the center; A non-display area positioned at an edge of the display area; And a data pad area disposed at one end of the non-display area and bonded to a driving unit for providing a signal to the pixel area, wherein the column spacer and the protrusion formed on the first area are formed on at least the second area. The number per unit area is greater than that of the formed column spacer and the protrusion.

The column spaces and the protrusions formed on the first region are formed at least one in every two pixels at least up and down, and one in every three pixels from side to side.

The column spaces and the protrusions formed on the second region are formed at least one in every four pixels, and one in every eighteen pixels left and right.

In order to achieve the above object, a method of manufacturing a liquid crystal display device according to an embodiment of the present invention, preparing a substrate; Forming a gate metal on the substrate and forming a gate electrode and a gate wiring through a first mask process; Forming an insulating layer, an active layer, a source and a drain layer, and a projection layer on the gate electrode and the gate wiring by performing a second mask; Forming a contact hole through a third mask process; And forming a protrusion in which the pixel electrode and the upper portion are divided into at least two parts through a fourth mask process.

The forming of the insulating layer, the active layer, the source and drain layers, and the protrusion layer through the process of the second mask may include sequentially forming the insulating layer, the amorphous silicon layer, the metal layer, and the photoresist layer on the gate electrode and the gate wiring. Making; A first photosensitive film pattern is formed on the insulating layer, the amorphous silicon layer, and the metal layer at a position corresponding to the thin film transistor by using a halftone mask, and the upper portion of the insulating layer, the amorphous silicon layer, and the metal layer at a position corresponding to the protrusion. Forming a second photoresist pattern; And forming the insulating layer, the active layer, the source and drain layers, and the projection layer using the first and second photoresist patterns as masks.

The forming of the protrusion having the pixel electrode and the upper portion divided into at least two portions through the fourth mask process may include forming a transparent electrode layer on the contact hole; And forming a pixel electrode by patterning the transparent transparent electrode layer using a halftone mask, and forming the protrusion divided into the two parts by patterning the protrusion layer to one depth.

According to a preferred embodiment of the present invention, by forming two or more projections for supporting the column spacer for maintaining the cell gap of the liquid crystal display device to reinforce the support force for the column spacer to prevent the deviation of the column spacer and the projection period due to external force By doing so, there is an effect that can prevent the unevenness of the liquid crystal display device.

In addition, by dividing the liquid crystal display device into predetermined first and second regions and differently forming the density of the column spacer formed therein for each region, the liquid crystal display device having a stronger bearing force against vibration and impact applied from the outside can be provided. It has an effect.

1 is a view showing a portion of a substrate of a conventional liquid crystal display device.
FIG. 2 is a cross-sectional view taken along lines II-II and III-III of the liquid crystal display of FIG. 1.
3 is a plan view illustrating a structure of one substrate of a liquid crystal display according to an exemplary embodiment of the present invention.
4 is a cross-sectional view taken along lines IV-IV and V-V of FIG. 3.
5A to 5H illustrate a method of manufacturing a liquid crystal display device having a column spacer of the present invention.
6 is a diagram schematically illustrating a screen configuration of a liquid crystal display device having a column spacer according to another embodiment of the present invention.
FIG. 7A illustrates a structure of a pixel formed on a first area of a liquid crystal display according to another exemplary embodiment of the present invention, and FIG. 7B illustrates a structure of a pixel formed on a second area.

Hereinafter, a liquid crystal display and a manufacturing method thereof having a column spacer according to an exemplary embodiment of the present invention will be described with reference to the drawings.

In the following description, the drawings referred to for the embodiments herein are not intended to limit the shapes and positions of the components to the forms shown, and in particular the drawings are intended to provide an understanding of the structures and shapes that are technical features of the invention. To help, some components have been exaggerated or scaled down.

3 is a plan view illustrating a structure of one substrate of a liquid crystal display according to an exemplary embodiment of the present invention.

As illustrated, one substrate of the liquid crystal display device of the present invention defines a plurality of pixels P on the substrate 100, and the gate wiring 122 is spaced apart from the gate wiring 122 on one side of the pixel P. The first and second common wirings 154a and 154b are formed, and the data wiring 172 which intersects the gate wiring 122 and the common wirings 154a and 154b is formed.

In addition, the pixel region P is defined at a point where the first and second common lines 154a and 154b intersect with the data line 172.

A portion of the gate wiring 122 is used as the gate electrode 124 on the gate wiring 122 described above, and the active layer 140 is positioned on the gate electrode 124. A thin film transistor TFT formed of a spaced apart source electrode 142 and a drain electrode 144 is formed on the active layer 140.

The pixel region P is located on both sides of the pixel region P, and is made of the same material as the first and second common wirings 154a and 154b, and the common wirings 154a and 154b and the pixel region P. First common electrodes 181 positioned on both sides of the second vertical electrodes 181, and second rod-shaped transparent common electrodes 182 connected to the second common wires 154b and vertically extending to the pixel region P, respectively. This is made up.

In addition, the transparent pixel electrode 180 is disposed between the transparent second common electrode 182 and spaced apart from each other, and extends from the lead portion 168 in contact with the drain electrode 144.

The protrusion 147 is formed on the gate wiring 122 or the common wiring 154a, but the protrusion is divided into at least two parts.

At this time, the first common wiring 154a and the upper lead-out portion 168 have an insulating film interposed between the two components, and the storage capacitor portion Cst is formed.

A gap spacer 191 for maintaining spaced gaps between the two substrates 100 on the upper color filter substrate bonded to the array substrate 100 configured as described above, and a pressing spacer 192 for preventing pressing ) Is configured.

At this time, the gap spacer 191 is configured to correspond to the above-described projection 147, a groove is formed in a portion corresponding to the projection 147, the projection 147 is inserted into the groove, the divided projection ( The contact surfaces are divided and supported by 147a and 147b.

Hereinafter, the configuration of the liquid crystal display device of the present invention shown in FIG. 3 will be described in more detail with reference to the cross-sectional view.

4 is a cross-sectional view taken along lines IV-IV and V-V of FIG. 3.

As shown, the transverse electric field type liquid crystal display device according to the embodiment of the present invention, the array substrate 100, the RGB color filters 204a, 204b, 204c, the black matrix (BM) 206, The color filter substrate 200 including the gap spacer 191 and the pressing spacer 192 is bonded to each other by a predetermined distance with a liquid crystal layer interposed therebetween.

In this case, the array substrate 100 has a switching element TFT for driving the pixel region P, and the pixel electrode 180 is spaced apart from the common electrode in the pixel region P.

In addition, the gate line 122 and the data line, which transmit a signal to the switching element TFT, are positioned at one side and the other side of the pixel area P. In this case, the protrusion 147 is formed on the gate wiring 122 in the same process as the process of forming the thin film transistor TFT and the wiring, and the gap spacer 191 is positioned to correspond to the protrusion 147 and the pixel region is formed. The pressing spacer 192 is positioned to correspond to a portion not used as one side opening area of (P).

The abutting surface of the gap spacer 191 in contact with the above-described protrusion 147 is configured to be recessed to a predetermined depth, and the protrusion 147 is inserted into the recess, and the protrusion 147 is also provided. Is divided into at least two parts (147a, 147b) to have a form that supports the inside of the gap spacer 191 from both sides.

Here, in order to divide the protrusion 147 to have the above-described structure, the source / drain electrode pattern 147 before dividing is patterned by using a half tone exposure technique.

According to this structure, in the liquid crystal display device having the column spacer according to the embodiment of the present invention, the projections are minimized by supporting the column spacer in two parts even when the impact is applied from the outside.

Hereinafter, a method of manufacturing a liquid crystal display device having a column spacer according to an embodiment of the present invention will be described with reference to the drawings.

5A to 5H illustrate a method of manufacturing a liquid crystal display device having a column spacer of the present invention.

First, referring to FIG. 5A, a pixel region P, a thin film transistor region TFT, and a protrusion region D are defined on a substrate 100, and a conductive metal is deposited on the substrate 100 to form a first mask process. By patterning, the plurality of gate wires 122 and the gate wires 122 extending in one direction and spaced apart from each other in parallel to each other or forming a gate electrode 124 protruding thereto are formed. At the same time, the common wiring 154a spaced apart from and parallel to the gate wiring 122 is formed.

As the aforementioned conductive metal, aluminum (Al), aluminum alloy (AlNd), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), or the like may be used.

The common wiring 154a may be patterned in various ways. In this embodiment, the first common wiring 154a is formed on the upper and lower portions of the pixel region P, and the first common wiring 154a is vertically connected. First common electrodes 181 of FIG. 3 are formed on both sides of the pixel region P. Referring to FIG.

The first common wiring 154a is configured to form the storage capacitor Cst, and the second common wiring 154b of FIG. 3 is formed of a transparent second common electrode 182 of FIG. It is a configuration for transmitting a common signal by contact.

Next, referring to FIG. 5B, the gate insulating layer 110, the pure amorphous silicon layer 112, and the gate wiring 122 and the gate electrode 124 and the common wiring 154a are formed on the entire surface of the substrate 100. The impurity amorphous silicon layer 114 and the conductive metal layer 116 are stacked, and a photoresist is applied on the conductive metal layer 116 to form a photosensitive layer 118.

The gate insulating layer 110 may be formed by depositing one or more selected from inorganic insulating material groups such as silicon oxide (SiO 2) and silicon nitride (SiNX). In addition, the conductive metal layer may be formed by selecting from the above-described conductive metal group, and the amorphous silicon layer 112 and the impurity amorphous silicon layer 114 are pure amorphous silicon (a-Si: H) and impurity amorphous silicon (n +), respectively. a-Si: H) may be formed by depositing.

Next, a mask M including the transmissive part M1, the blocking part M2, and the transflective part M3 is positioned on the spaced upper portion of the photosensitive layer 118.

The mask M region corresponding to the transflective portion M3 of the mask M may be a translucent film or may be formed by forming a slit pattern. Particularly, a portion corresponding to the thin film transistor region TFT may be formed. The transflective portion M3 and the blocking portion M1 are positioned at both sides of the transflective portion M3, and the blocking portion M1 having a predetermined width is positioned at one side of each pixel area P. In addition, the blocking unit M1 is positioned in one of the gate wiring 122 and the common wiring 154a corresponding to the protruding region D. FIG.

Next, the process of exposing the lower photosensitive layer 118 by irradiating light to the upper portion of the mask (M). According to this process, as shown in FIG. 5C, the first photosensitive pattern 130a having a stepped shape corresponding to the thin film transistor region TFT and the second photosensitive pattern 130b formed corresponding to the protrusion region D are formed. Is formed.

In addition, the conductive metal layer 116 is exposed to the peripheries of the first and second photosensitive patterns 130a and b.

Subsequently, an etching process is performed to remove the conductive metal layer 116 and the impurity amorphous silicon layer 114 and the pure amorphous silicon layer 112 below the exposed conductive metal layer 116 around the first and second photosensitive patterns 130a and b. do.

When the above-described etching process is completed, as shown in FIG. 5D, the gate insulating layer 110 is exposed to the periphery of the first and second photosensitive patterns 120a and b. In addition, a first semiconductor pattern 127 is formed below the first photosensitive pattern 120a in which the first metal pattern 126 and the impurity amorphous silicon layer and the pure amorphous silicon layer are patterned. At the same time, protrusions in which the second semiconductor pattern 128 and the second metal pattern 129 are stacked are formed in the protrusion region D under the second photosensitive pattern 120b.

Next, an ashing process of etching a portion of the first and second photosensitive patterns 120a and b from the surface thereof is performed. The ashing process is for exposing a portion of the lower first metal pattern 131 of FIG. 5E by removing a portion having a low height corresponding to the gate electrode 124 of the stepped first photosensitive pattern 120a. .

As shown in FIG. 5E, when the ashing process is performed, the first photosensitive pattern 120a of the portion corresponding to the gate electrode 124 is completely removed to expose the center area of the lower first metal pattern 131. . In this process, since the first and second photosensitive patterns 120a and b are inclined to the periphery, other regions of the first photosensitive pattern 120a and the second photosensitive pattern 120b are surfaced through an ashing process. As a result, the first and second metal patterns 131 and 129 of the portion corresponding to the peripheral portion having the low thickness and are removed by the predetermined thickness are exposed.

A process of removing the exposed first metal pattern 131 is performed, and a process of exposing the lower pure amorphous silicon layer 112 is performed by removing the impurity amorphous silicon layer 114 in the lower first semiconductor pattern. do.

According to the above-described process, as shown in FIG. 5F, the source electrode 140 and the drain electrode 142 may be formed to correspond to the thin film transistor region TFT, and may be formed under the two electrodes 140 and 142. The patterned impurity amorphous silicon layer 114 is formed with an ohmic contact layer 138 having an ohmic contact function, and the pure amorphous silicon layer 112 thereunder serves as a channel between the two electrodes 140 and 142. The active layer 136 is formed.

Next, a process of removing the first and second photosensitive patterns 120a and b is performed, and as shown in FIG. 5G using the third mask, the source and drain electrodes 140 and 142 and the protrusions 128 and 129. ) Is formed on the entire surface of the substrate 100 is formed of a group of inorganic insulating materials including silicon nitride (SiNx) and silicon oxide (SiO2) to form a protective film 150 to form a pattern, the pattern of the drain electrode 142 A drain contact hole 145 exposing a portion is formed.

Next, as shown in FIG. 5H, indium tin oxide (ITO) and indium zinc oxide (IZO) are formed on the entire surface of the substrate 100 on which the passivation layer 150 is formed using the fourth mask. A lead wire extending from the lead wire to the pixel region by depositing and patterning one selected from the group of transparent conductive metals and extending into a shape overlapping the first common wire 154a while being in contact with the drain electrode 142; A pixel electrode 180 having a shape is formed.

Here, the fourth mask described above is a semi-transparent film having the upper portion of the protruding region D or a halftone mask in which a slit pattern is formed, and the protrusions 128 and 129 are formed at the same time as the pixel electrode 180 is formed. By patterning the upper part of the top surface), a part of the source and drain metal patterns (129 of FIG. 5G) and a part of the insulating layer 150 are removed to form protrusions 147a and b divided into two parts.

As described above, according to the four mask process described above, a liquid crystal display device having projections stably supporting the column spacer can be manufactured.

On the other hand, as the liquid crystal panel becomes thin and large, the warpage of the liquid crystal display device increases, and the gap between the column spacer and the projection increases according to the vibration and shock applied from the outside, and thus the frequency of the occurrence of stain defects increases. to be. Hereinafter, a structure of a liquid crystal display including a column spacer according to another embodiment of the present invention for solving the above-described problem will be described with reference to the drawings.

6 is a diagram schematically illustrating a screen configuration of a liquid crystal display device having a column spacer according to another embodiment of the present invention.

As shown in the drawing, the liquid crystal display device 300 of the present invention defines a non-display area 310, which is an edge of a liquid crystal panel in which an image is not displayed, and a plurality of thin film transistors and pixel areas, thereby displaying an image. The display area 320 is divided into a data pad area 330 to which a data signal for driving the pixel area and a source driver for providing a control signal are bonded.

The non-display area 310 is an outermost part of the liquid crystal panel, in which only other wires are formed, and a pixel area is not defined, and the display area 320 is provided with a thin film transistor, and a pixel area is defined, thereby making an image. This area displays. Predetermined protrusions are formed on the plurality of gate wires in the display area 321, and gap spacers of column spacers are formed to be in contact with each other at positions facing the protrusions.

In addition, the display area 321 is divided into an outer first area 321 and an inner center second area 322, and the column spacer and the protrusion of the first area 321 are higher than the second area 322. It is characterized in that the density is formed densely.

The data pad area 330 is an area in which a signal for controlling the thin film transistor provided in the display area 321 and a source driver for providing image related data in the pixel area are bonded.

In this structure, the number of column spacers and protrusions of the first region 321 described above is greater than that of the second region 322, so that the stiffness is maintained and the stiffness is maintained even with external vibration and impact. The flow of the contact surface of the liver is prevented.

FIG. 7A illustrates a structure of a pixel formed on a first area of a liquid crystal display according to another exemplary embodiment of the present invention, and FIG. 7B illustrates a structure of a pixel formed on a second area.

As illustrated, in the first region 321 of the liquid crystal display of the present invention, a plurality of pixels P including thin film transistors are formed, and each pixel corresponds to one R, G, and B color. . In the present invention, the first protrusions D1 formed in the first area are formed one by two up / down, three left / right pixels, and the second protrusions D2 of the second area 322 are up / down. One pixel is formed for every four pixels of the left and right 18 pixels.

Here, the distance between the above-described first and second protrusions D1 and D2 may be different according to the size of the liquid crystal display, and the first protrusion D1 is formed at least closely than the second protrusion D2 so that the column spacer Will be supported.

According to this structure, the liquid crystal display according to another embodiment of the present invention is denser than the center portion of the density of the column spacer and the projection portion toward the outer portion, thereby securing a high supporting force to the vibration and impact applied from the outside .

Accordingly, by preventing the gap between the column spacer and the projection, it is possible to improve the problem of unevenness appearing on the screen.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.

TFT: switching element P: pixel portion
100: array substrate 122: gate wiring
147,147a, 147b: protrusion 154a: first common wiring
180 pixel electrode 191 gap spacer
192: pressed spacer 200: color filter substrate
204a, 204b, 204c: color filter 206: black matrix

Claims (9)

A color filter formed to correspond to the plurality of pixel areas; And,
A first substrate including at least one column spacer formed on the color filter;
A plurality of gate lines and data lines defining the plurality of pixel areas at points perpendicular to each other;
A thin film transistor formed in each of the plurality of pixel regions; And,
A second substrate formed at a position corresponding to the column spacer in one region of the gate wiring, and having a contact portion divided into at least two parts to support the column spacer;
Liquid crystal display device having a column spacer, characterized in that consisting of. The method of claim 1,
The column spacer,
And a depression having a depth in which a central portion is inserted into the protrusion. The method of claim 1,
The protrusion is,
And a column spacer, the same layer and the same material as the data line. A display area defining a plurality of pixel areas for displaying an image, the display area being divided into an outer first area and a central second area;
A non-display area positioned at an edge of the display area; And,
A data pad area disposed at one end of the non-display area and bonded to a driving part providing a signal to the pixel area,
And a plurality of column spacers and protrusions formed on the first area, wherein the number of column spacers and protrusions on the second area is larger than at least one of the column spacers and the protrusions formed on the second area. The method of claim 4, wherein
The column space and the protrusion formed on the first region,
A liquid crystal display device having a column spacer, which is formed at least one for every two pixels at least up and down, and one for every three pixels from side to side. The method of claim 5, wherein
The column space and the protrusion formed on the second region,
And at least one pixel every four pixels, and one pixel every eighteen pixels left and right. Preparing a substrate;
Forming a gate metal on the substrate and forming a gate electrode and a gate wiring through a first mask process;
Forming an insulating layer, an active layer, a source and a drain layer, and a projection layer on the gate electrode and the gate wiring by performing a second mask;
Forming a contact hole through a third mask process; And,
Forming a protrusion in which the pixel electrode and the upper portion are divided into at least two parts through a fourth mask process;
Method of manufacturing a liquid crystal display device having a column spacer comprising a. The method of claim 7, wherein
The forming of the insulating layer, the active layer, the source and drain layers, and the protrusion layer through the process of the second mask,
Sequentially forming an insulating layer, an amorphous silicon layer, a metal layer, and a photoresist layer on the gate electrode and the gate wiring;
A first photosensitive film pattern is formed on the insulating layer, the amorphous silicon layer, and the metal layer at a position corresponding to the thin film transistor by using a halftone mask, and the upper portion of the insulating layer, the amorphous silicon layer, and the metal layer at a position corresponding to the protrusion. Forming a second photoresist pattern; And,
Forming the insulating layer, the active layer, the source and drain layers, and the protrusion layer using the first and second photoresist patterns as masks.
Method of manufacturing a liquid crystal display device having a column spacer comprising a. The method of claim 7, wherein
Forming the protrusions in which the pixel electrode and the upper portion are divided into at least two parts through the fourth mask process may include:
Forming a transparent electrode layer on the contact hole; And,
Patterning the transparent electrode layer using a halftone mask to form a pixel electrode, and patterning the protrusion layer to a depth to form a protrusion divided into the two parts.
Method of manufacturing a liquid crystal display device having a column spacer comprising a.

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