KR20120063485A - 규소-풍부 합금 - Google Patents
규소-풍부 합금 Download PDFInfo
- Publication number
- KR20120063485A KR20120063485A KR1020127007075A KR20127007075A KR20120063485A KR 20120063485 A KR20120063485 A KR 20120063485A KR 1020127007075 A KR1020127007075 A KR 1020127007075A KR 20127007075 A KR20127007075 A KR 20127007075A KR 20120063485 A KR20120063485 A KR 20120063485A
- Authority
- KR
- South Korea
- Prior art keywords
- composition
- matter
- silicon
- phase
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 251
- 239000010703 silicon Substances 0.000 title claims abstract description 237
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 234
- 229910045601 alloy Inorganic materials 0.000 title description 58
- 239000000956 alloy Substances 0.000 title description 58
- 239000000203 mixture Substances 0.000 claims abstract description 231
- 239000004033 plastic Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 191
- 230000008569 process Effects 0.000 claims description 158
- 229910021332 silicide Inorganic materials 0.000 claims description 63
- 239000011651 chromium Substances 0.000 claims description 49
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 49
- 239000007788 liquid Substances 0.000 claims description 48
- 229910052804 chromium Inorganic materials 0.000 claims description 41
- 229910052720 vanadium Inorganic materials 0.000 claims description 40
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims description 34
- 238000012360 testing method Methods 0.000 claims description 31
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 25
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 24
- 238000005266 casting Methods 0.000 claims description 16
- 230000000630 rising effect Effects 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- PICQSJQNJSMSNL-UHFFFAOYSA-N [S--].[S--].[Cr+4] Chemical compound [S--].[S--].[Cr+4] PICQSJQNJSMSNL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 230000002159 abnormal effect Effects 0.000 claims description 5
- 230000001747 exhibiting effect Effects 0.000 claims description 5
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 150000003624 transition metals Chemical group 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- NGTSQWJVGHUNSS-UHFFFAOYSA-N bis(sulfanylidene)vanadium Chemical compound S=[V]=S NGTSQWJVGHUNSS-UHFFFAOYSA-N 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000009749 continuous casting Methods 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims 7
- 239000010955 niobium Substances 0.000 claims 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 7
- 229910052715 tantalum Inorganic materials 0.000 claims 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical group 0.000 claims 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 1
- 150000001342 alkaline earth metals Chemical class 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 239000004576 sand Substances 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 230000003993 interaction Effects 0.000 abstract description 9
- 230000007246 mechanism Effects 0.000 abstract description 3
- 239000012071 phase Substances 0.000 description 106
- 239000002131 composite material Substances 0.000 description 52
- 229910019974 CrSi Inorganic materials 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 17
- 238000007711 solidification Methods 0.000 description 17
- 230000008023 solidification Effects 0.000 description 17
- 238000001000 micrograph Methods 0.000 description 13
- 238000010587 phase diagram Methods 0.000 description 12
- 229910002056 binary alloy Inorganic materials 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000007657 chevron notch test Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 230000006399 behavior Effects 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 230000006698 induction Effects 0.000 description 7
- 238000005345 coagulation Methods 0.000 description 6
- 230000015271 coagulation Effects 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- IYLGZMTXKJYONK-ACLXAEORSA-N (12s,15r)-15-hydroxy-11,16-dioxo-15,20-dihydrosenecionan-12-yl acetate Chemical compound O1C(=O)[C@](CC)(O)C[C@@H](C)[C@](C)(OC(C)=O)C(=O)OCC2=CCN3[C@H]2[C@H]1CC3 IYLGZMTXKJYONK-ACLXAEORSA-N 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000014509 gene expression Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- IYLGZMTXKJYONK-UHFFFAOYSA-N ruwenine Natural products O1C(=O)C(CC)(O)CC(C)C(C)(OC(C)=O)C(=O)OCC2=CCN3C2C1CC3 IYLGZMTXKJYONK-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000009862 microstructural analysis Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910019582 Cr V Inorganic materials 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 3
- 229910008458 Si—Cr Inorganic materials 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910002058 ternary alloy Inorganic materials 0.000 description 3
- 238000002076 thermal analysis method Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229940126062 Compound A Drugs 0.000 description 2
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 2
- 229910008329 Si-V Inorganic materials 0.000 description 2
- 229910006768 Si—V Inorganic materials 0.000 description 2
- 229910006767 Si—VSi2 Inorganic materials 0.000 description 2
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 2
- JIVKZEYKIGZCHH-UHFFFAOYSA-N [V].[Cr].[Si] Chemical compound [V].[Cr].[Si] JIVKZEYKIGZCHH-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 cast iron Chemical class 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 150000002019 disulfides Chemical class 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 229910001234 light alloy Inorganic materials 0.000 description 2
- 230000003278 mimic effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002667 nucleating agent Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000007712 rapid solidification Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- KHDSWONFYIAAPE-UHFFFAOYSA-N silicon sulfide Chemical compound S=[Si]=S KHDSWONFYIAAPE-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 101150061900 Ambn gene Proteins 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910000681 Silicon-tin Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- XUKVMZJGMBEQDE-UHFFFAOYSA-N [Co](=S)=S Chemical class [Co](=S)=S XUKVMZJGMBEQDE-UHFFFAOYSA-N 0.000 description 1
- HNDMNBUITRNJKK-UHFFFAOYSA-N [Ni](=S)=S Chemical class [Ni](=S)=S HNDMNBUITRNJKK-UHFFFAOYSA-N 0.000 description 1
- RUHCFANYSBONFV-UHFFFAOYSA-N [S--].[S--].[Nb+4] Chemical class [S--].[S--].[Nb+4] RUHCFANYSBONFV-UHFFFAOYSA-N 0.000 description 1
- JAAVTMIIEARTKI-UHFFFAOYSA-N [S--].[S--].[Ta+4] Chemical class [S--].[S--].[Ta+4] JAAVTMIIEARTKI-UHFFFAOYSA-N 0.000 description 1
- YRPQRSGRKCCSNU-UHFFFAOYSA-N [Si][Ag][Cr] Chemical compound [Si][Ag][Cr] YRPQRSGRKCCSNU-UHFFFAOYSA-N 0.000 description 1
- WGLNLIPRLXSIEL-UHFFFAOYSA-N [Sn].[Cr] Chemical compound [Sn].[Cr] WGLNLIPRLXSIEL-UHFFFAOYSA-N 0.000 description 1
- CPTXTCHGFLSEGO-UHFFFAOYSA-N [Sn].[Cr].[Si] Chemical compound [Sn].[Cr].[Si] CPTXTCHGFLSEGO-UHFFFAOYSA-N 0.000 description 1
- MANBDHUBXBMZNV-UHFFFAOYSA-N [V]=[Si] Chemical compound [V]=[Si] MANBDHUBXBMZNV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 description 1
- GHZFPSVXDWJLSD-UHFFFAOYSA-N chromium silver Chemical compound [Cr].[Ag] GHZFPSVXDWJLSD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 210000001072 colon Anatomy 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010205 computational analysis Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 125000002228 disulfide group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- NRJVMVHUISHHQB-UHFFFAOYSA-N hafnium(4+);disulfide Chemical compound [S-2].[S-2].[Hf+4] NRJVMVHUISHHQB-UHFFFAOYSA-N 0.000 description 1
- 238000003709 image segmentation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005495 investment casting Methods 0.000 description 1
- LQJIDIOGYJAQMF-UHFFFAOYSA-N lambda2-silanylidenetin Chemical compound [Si].[Sn] LQJIDIOGYJAQMF-UHFFFAOYSA-N 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical class S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007528 sand casting Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012932 thermodynamic analysis Methods 0.000 description 1
- CFJRPNFOLVDFMJ-UHFFFAOYSA-N titanium disulfide Chemical compound S=[Ti]=S CFJRPNFOLVDFMJ-UHFFFAOYSA-N 0.000 description 1
- 239000012745 toughening agent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical class S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
- FHANEPRSLAMSJU-UHFFFAOYSA-N vanadium(4+);disulfide Chemical class [S-2].[S-2].[V+4] FHANEPRSLAMSJU-UHFFFAOYSA-N 0.000 description 1
- XWPGCGMKBKONAU-UHFFFAOYSA-N zirconium(4+);disulfide Chemical compound [S-2].[S-2].[Zr+4] XWPGCGMKBKONAU-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23575709P | 2009-08-21 | 2009-08-21 | |
| US61/235,757 | 2009-08-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20120063485A true KR20120063485A (ko) | 2012-06-15 |
Family
ID=42941885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127007075A Withdrawn KR20120063485A (ko) | 2009-08-21 | 2010-08-19 | 규소-풍부 합금 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20120238439A1 (enExample) |
| EP (2) | EP2878693A1 (enExample) |
| JP (2) | JP5809140B2 (enExample) |
| KR (1) | KR20120063485A (enExample) |
| CN (1) | CN102498226A (enExample) |
| BR (1) | BR112012003224A2 (enExample) |
| CA (1) | CA2771342A1 (enExample) |
| MX (1) | MX2012002155A (enExample) |
| RU (1) | RU2012103921A (enExample) |
| WO (1) | WO2011022058A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9061947B1 (en) * | 2009-11-02 | 2015-06-23 | Lockheed Martin Corporation | Multiphase eutectic ceramic coatings |
| JP2015517057A (ja) | 2011-12-23 | 2015-06-18 | ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ | シリコン共晶合金を含む工業コンポーネント及びそのコンポーネントを作製する方法 |
| IN2014DN05709A (enExample) | 2011-12-23 | 2015-04-10 | Dow Corning | |
| CA2872500A1 (en) * | 2012-05-21 | 2013-11-28 | Dow Corning Corporation | Silicothermic reduction of metal oxides to form eutectic composites |
| CN104321277A (zh) * | 2012-05-21 | 2015-01-28 | 道康宁公司 | 具有硅的熔融材料的容纳 |
| WO2015038421A1 (en) | 2013-09-10 | 2015-03-19 | Dow Corning Corporation | Wear-resistant silicon eutectic alloy components and methods of making the same |
| WO2015168500A1 (en) | 2014-05-02 | 2015-11-05 | Dow Corning Corporation | Ternary silicon-chromium eutectic alloys having molybdenum, copper or silver |
| WO2015183634A1 (en) | 2014-05-27 | 2015-12-03 | Dow Corning Corporation | Methods of removing silicon from silicon-eutectic alloy compositions, and products made by such methods |
| WO2015195538A1 (en) | 2014-06-17 | 2015-12-23 | Dow Corning Corporation | Decorative shape-cast articles made from silicon eutectic alloys, and methods for producing the same |
| CN105891243B (zh) * | 2016-03-30 | 2018-10-23 | 上海大学 | 二维连续成分样品、其制备方法及其在相图高通量快速测定中的应用 |
| JP7676729B2 (ja) | 2018-11-22 | 2025-05-15 | 東ソー株式会社 | Ｃｒ－Ｓｉ系焼結体 |
| EP4129954A4 (en) | 2020-03-26 | 2024-05-01 | Tosoh Corporation | CR-SI SINTERED BODY, SPUTTERING TARGET AND METHOD FOR PRODUCING A THIN FILM |
| CN115666820A (zh) | 2020-05-26 | 2023-01-31 | 东曹株式会社 | 金属-Si系粉末、其制造方法、以及金属-Si系烧结体、溅射靶和金属-Si系薄膜的制造方法 |
| WO2022025033A1 (ja) | 2020-07-31 | 2022-02-03 | 東ソー株式会社 | Ｃｒ－Ｓｉ－Ｃ系焼結体 |
| US20230407460A1 (en) * | 2020-11-06 | 2023-12-21 | The Regents Of The University Of California | Single phase high entropy intermetallics and method for manufacturing |
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| GB1043197A (en) * | 1962-06-01 | 1966-09-21 | Imp Metal Ind Kynoch Ltd | Niobium alloys |
| JP3567678B2 (ja) * | 1996-05-05 | 2004-09-22 | 征一郎 宮田 | 通電発熱体 |
| US7060360B2 (en) * | 2003-05-22 | 2006-06-13 | United Technologies Corporation | Bond coat for silicon based substrates |
| JP2010010009A (ja) * | 2008-06-30 | 2010-01-14 | Kurosaki Harima Corp | 溶造Ｓｉ電熱合金の抵抗温度曲線を平坦化する方法 |
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- 2010-08-19 BR BR112012003224A patent/BR112012003224A2/pt not_active IP Right Cessation
- 2010-08-19 CA CA2771342A patent/CA2771342A1/en not_active Abandoned
- 2010-08-19 EP EP14200069.4A patent/EP2878693A1/en not_active Withdrawn
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| US20120238439A1 (en) | 2012-09-20 |
| JP5809140B2 (ja) | 2015-11-10 |
| EP2878693A1 (en) | 2015-06-03 |
| CN102498226A (zh) | 2012-06-13 |
| EP2467506B1 (en) | 2014-12-31 |
| BR112012003224A2 (pt) | 2016-03-01 |
| JP2013502368A (ja) | 2013-01-24 |
| EP2467506A1 (en) | 2012-06-27 |
| CA2771342A1 (en) | 2011-02-24 |
| WO2011022058A1 (en) | 2011-02-24 |
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