KR20120047413A - Substrate processing apparatus, cover member therefor, tray therefor and substrate processing method - Google Patents

Abstract

The present invention provides a process chamber for forming a processing space for substrate processing; A substrate support provided in the process chamber and supporting a tray in which a plurality of substrates are seated in a rectangular array of n × m (n, m being two or more natural numbers); A substrate including a cover part formed with a plurality of openings formed therethrough, the cover part covering the substrate at a distance from the substrate, and a support part supporting the cover plate so as to be installed at a distance from the substrate; In the processing apparatus, the substrate processing apparatus includes at least one corner including a component such as a main component of the substrate in the corner portion of the tray corresponding to at least one of the vertices of the rectangular array formed by the plurality of substrates are disposed Disclosed is a substrate processing apparatus characterized in that a dummy substrate is mounted.

Description

Substrate processing apparatus, cover member therefor, tray therefor and substrate processing method}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for performing substrate processing such as etching a substrate, a cover member used therein, a tray used therein, and a substrate processing method.

The substrate processing apparatus includes a process chamber forming a closed processing space, and a substrate support installed in the process chamber to seat the substrate. The substrate processing apparatus applies power while injecting processing gas into the processing space to etch the surface of the substrate. Refers to an apparatus for performing substrate treatment such as vapor deposition.

Substrates processed by the substrate processing apparatus include semiconductor wafers, glass panels for LCD panels, and solar cell substrates.

As an example of the substrate processing apparatus, a plurality of solar cell substrates are seated on a substrate support, and then a cover member having a plurality of openings formed on the substrate is covered to cover the surface of the substrate to form minute unevenness-unevenness. The silver may vary depending on the characteristics of the device, and in particular, there is a substrate processing apparatus for performing a substrate treatment to form a low reflectance of light by the substrate in order to increase the efficiency of the solar cell device.

As described above, the substrate treating apparatus covering the cover member to form fine irregularities on the surface of the substrate forms irregularities on the surface of the substrate through the following process.

The substrate processing apparatus according to the related art forms a plasma in the processing space when power is applied while injecting gas into the process chamber, and a portion of the plasma and gas pass through the opening of the cover member to etch the surface of the substrate.

Some of the compounds formed by substrate etching float and flow in the open space between the bottom of the cover member and the substrate, and the remaining compounds and some of the suspended compounds adhere to the surface of the substrate to act as a mask in the substrate etching process. Thereby facilitating the formation of fine irregularities on the substrate surface.

Here, the cover member of the conventional substrate processing apparatus includes a cover plate having a plurality of openings formed therein, and a support part provided at an edge of the cover plate so that the cover plate may be installed at a distance from the substrate.

On the other hand, in the conventional substrate processing method for forming the fine roughness using the cover member, there may be a difference in the density of the compound depending on the position of the center and the edge of the cover member, especially near the vertex. There is a problem that affects the formation of fine irregularities on the surface of the substrate, causing the color difference of the substrate.

In particular, in the substrate processing method performed by the conventional substrate processing apparatus, as shown in FIG. 6A, a remarkable color difference occurs in the surface of the substrate after the substrate treatment in the vicinity of a vertex of the substrates seated in the rectangular array.

In addition, the color difference of the surface of the substrate means a difference in reflectance, and the effect of reducing the reflectance due to the formation of fine irregularities of the substrate may not be sufficiently achieved, thereby lowering the efficiency of the solar cell device.

In addition, the substrate having a color difference is not visually poor, which is mistaken as a defective product, thereby lowering the reliability of the product in the market, and circulating at a lower price than the substrate without color difference.

An object of the present invention to solve the above problems, a substrate processing apparatus that can prevent the generation of color difference on the surface of the substrate located at the vertex of the substrate seated on the tray in a rectangular array, a cover member used therein, It is to provide a tray and a substrate processing method used therefor.

The present invention has been made to achieve the object of the present invention as described above, the present invention comprises a process chamber for forming a processing space for substrate processing; A substrate support provided in the process chamber and supporting a tray in which a plurality of substrates are seated in a rectangular array of n × m (n, m being two or more natural numbers); A substrate including a cover part formed with a plurality of openings formed therethrough, the cover part covering the substrate at a distance from the substrate, and a support part supporting the cover plate so as to be installed at a distance from the substrate; In the processing apparatus, the substrate processing apparatus includes at least one corner including a component such as a main component of the substrate in the corner portion of the tray corresponding to at least one of the vertices of the rectangular array formed by the plurality of substrates are disposed Disclosed is a substrate processing apparatus characterized in that a dummy substrate is mounted.

The corner dummy substrate may be seated over one or more substrates based on vertices.

A corner accommodating groove may be formed in an upper surface of the tray to insert a portion of the corner dummy substrate in the depth direction of the tray to prevent the position movement of the corner dummy substrate when the tray is moved.

At least one outer dummy substrate including a component such as a main component of the substrate may be further installed at an edge of the rectangular array of the plurality of substrates.

An outer accommodating groove may be formed on an upper surface of the tray to insert a portion of the outer dummy substrate in a depth direction of the tray to prevent the position movement of the outer dummy substrate when the tray is moved.

The substrate may have a quadrangular shape, and the width of the outer dummy substrate may be 5-15% of the length of the short side of the substrate, and the width of the corner dummy substrate may be 10-80% of the short side of the substrate.

The width of the corner dummy substrate may be 15 to 30% of the short side length of the substrate.

The width of the outer dummy substrate may be 5-20% of the short side length of the substrate.

The sum of the width of the outer dummy substrate and the width of the corner dummy substrate may be 15 to 100% of the short side length of the substrate.

The sum of the width of the outer dummy substrate and the width of the corner dummy substrate may be 15 to 35% of the short side length of the substrate.

The width of the corner fine substrate may be 10 to 80% of the short side length of the substrate.

The support part corresponds to a rectangular array of the plurality of substrates, and the inner surface thereof has a substantially rectangular shape, and the inner surface of the support part has the same distance from the edge of the outer dummy substrate, and each corner dummy substrate is adjacent to the neighboring substrate. It can be installed at intervals with the corner pile board.

A portion corresponding to the corner dummy substrate may be integrally installed with the corner dummy substrate.

The support part may have a substantially rectangular shape having an inner surface corresponding to the rectangular array of the plurality of substrates, and may be concave outward from a portion corresponding to the corner dummy substrate.

The support part may have a substantially rectangular shape having an outer surface, and a dummy substrate accommodating groove may be formed to be concave outward from a portion corresponding to the corner dummy substrate.

Crystal substrate silicon may be used for the substrate and the corner dummy substrate.

The present invention also discloses a cover member which is a cover portion of the substrate processing apparatus.

The present invention also discloses a tray of the substrate processing apparatus.

The present invention also relates to a substrate processing method by the substrate processing apparatus, wherein the substrate processing method comprises a main component of the substrate at a corner of a tray corresponding to at least one vertex of a vertex of a rectangular array in which a plurality of substrates are arranged and arranged. Disclosed is a substrate treatment method comprising performing a substrate treatment in a state in which at least one corner dummy substrate including a component such as the same is seated.

The substrate processing apparatus according to the present invention, a cover member used therein, a tray and a substrate processing method used therein are provided at edge portions of a tray corresponding to at least one vertex of a vertex of a rectangular array formed by arranging a plurality of substrates. By performing the substrate treatment in a state in which the corner dummy member is seated, there is an advantage that the color difference of the substrate positioned at the corner of the tray can be improved, thereby greatly improving the quality, efficiency and productivity of the substrate.

In particular, the substrate processing apparatus according to the present invention and the cover member used therein do not change the size of the substrate support or the tray by forming a dummy substrate receiving groove which is recessed outwardly from the portion corresponding to the corner dummy substrate in the support portion constituting the cover portion. By enabling the installation of the corner pile member, there is an advantage that the quality, efficiency and productivity of the substrate can be greatly improved without increasing the manufacturing cost of the apparatus.

1 is a cross-sectional view showing a substrate processing apparatus according to the present invention.
FIG. 2 is a plan view illustrating a tray, substrates seated on the tray, and a support of the cover part in FIG. 1; FIG.
3A is a partial plan view of the tray, the substrates seated on the tray, and the support of the cover part in FIGS. 1 and 2.
3B is a cross-sectional view taken along the III-III direction in FIG. 3A.
FIG. 4 is a partial plan view showing a tray, a substrate mounted on the tray, and a support of the cover part, showing a case in which another cover part is deformed in the substrate processing apparatus of FIG. 1.
FIG. 5 is a partial plan view illustrating a tray, a substrate mounted on the tray, and a support part of the cover part, which shows a case in which another cover part is modified in the substrate processing apparatus of FIG. 1.
6A and 6B are conceptual views showing a silicon substrate substrate processed by a conventional substrate processing apparatus and a silicon substrate substrate processed by a substrate processing apparatus according to the present invention.

Hereinafter, a substrate treating apparatus according to the present invention, a cover member used therein, a tray used therein, and a substrate treating method will be described in detail with reference to the accompanying drawings. The accompanying drawings are shown for the purpose of explanation of the invention and have been exaggerated in size and ratio with actual ones for convenience of description.

1 is a cross-sectional view showing a substrate processing apparatus according to the present invention, Figure 2 is a plan view showing a tray, the substrate seated on the tray in FIG.

As shown in FIG. 1, a substrate processing apparatus according to the present invention includes: a process chamber 100 forming a processing space S for substrate processing; A substrate support 130 provided in the process chamber 100 and supporting the tray 30 on which the plurality of substrates 10 are seated; A plurality of openings 211 are formed to penetrate up and down, and the cover part 200 covers the substrate 10. The substrate treatment may be a variety of substrate treatment, particularly reactive ion etching is most preferred.

The substrate 10 to be subjected to substrate treatment can be any substrate as long as it is a substrate requiring substrate treatment such as etching. In particular, crystalline silicon for solar cells such as monocrystalline silicon and polycrystalline silicon that need to form fine roughness on its surface through etching. Substrates are also possible.

When the substrate 10 is a silicon substrate for a solar cell, the substrate 10 uses a substrate processing apparatus according to the present invention to form a plurality of fine irregularities on the surface of the substrate 10 in order to increase the efficiency of the solar cell. Is lowering.

The substrate 10 may be mounted on the tray 30 in an array of n × m (n, m is two or more natural numbers) for efficiency of substrate processing.

The tray 30 is a configuration in which a plurality of substrates 10 are seated and transporting the substrate 10. The tray 30 may have various materials and shapes depending on the type and processing process of the substrate 10. Here, the tray 30 is made of a material resistant to plasma such as borosilicate glass (pyrex), Al ₂ O ₃ , quartz (Quartz), and various resins, and is used as a structure for transferring the substrates 10 in a seated state. Of course, if the 10 is directly seated on the substrate support 130, it is not necessary.

The process chamber 100 is a configuration for forming a closed processing space (S) for substrate processing, various configurations are possible according to the substrate processing process, as shown in Figure 1, is detachably coupled to each other It may be configured to include a chamber body 120 and the top lead 110 to form a processing space. Here, the processing performed by the substrate processing apparatus according to the present invention includes an etching process for etching the surface of the substrate 10 by forming a plasma in a vacuum state.

The chamber body 120 may be configured in various ways according to design and design, and at least one gate 170 may be formed to be opened and closed by a gate valve so that the tray 30 on which the substrate 10 is seated may enter and exit the chamber body 120. Can be.

Meanwhile, in the process chamber 100, a shower head 140 and a substrate 10 that receive a gas supplied from an external gas supply device (not shown) and inject a processing gas into the processing space S are provided through the tray 30. Devices for performing a vacuum treatment process, such as a substrate support 130 to be seated, an exhaust pipe 180 connected to an exhaust system (not shown) for pressure control and exhaust in the processing space S, are installed.

The substrate support 130 supports the tray 30 on which the substrates 10 are seated, and a lower electrode (not shown) to which power is applied so that a reaction for substrate processing such as plasma formation may occur in the processing space S. This is installed.

Here, the lower electrode is grounded to the process chamber 100 and the shower head 140 according to the power application method and one or two RF powers are applied, or the lower electrode is grounded and the process chamber 100 and the shower head 140 are grounded. RF power may be applied to the lower electrode, or a first RF power may be applied to the lower electrode, and a second RF power may be applied to the process chamber 100 and the shower head 140.

The cover part 200 may be configured in various ways according to the purpose of use, and as shown in FIGS. 1, 2, 4, and 5, a cover plate 210 having a plurality of openings 211 formed therein; The support part 220 is installed at an edge of the cover plate 210 to support the cover plate 210 so that the cover plate 210 is installed at a predetermined interval from the substrate 10 seated on the tray 30. Can be configured.

In this case, the cover part 200 forms a covering space between the trays 30 on which the substrate 10 is seated, confines the compound formed by the plasma introduced through the opening 211, and thus the compound is formed on the surface of the substrate 10. It is an example of the case used for a predetermined purpose, such as attached to form a fine irregularity. Here, when the substrate 10 is a silicon substrate, the compound includes a silicon compound and the like.

In this case, the distance between the bottom of the cover part 200, ie, the bottom surface of the cover plate 210, and the surface of the substrate 10 seated on the tray 30 is 5 in consideration of the effect of confining the residue and the rate of irregularities due to the residue. It is preferable to maintain mm-30mm.

The opening 211 formed in the cover plate 210 may have various shapes and dimensions according to the purpose of use of the cover part 200, and may be formed to be long as a slit. In this case, when the opening 211 is formed of a slit, the width thereof is preferably formed to be 1/2 or less of the distance between the bottom surface of the cover plate 210 and the substrate 10.

The opening 211 may be chamfered at an edge of the opening 211 in at least one of an upper surface and a lower surface.

The cover plate 210 may be used in a variety of materials according to the vacuum treatment process, a material that is resistant to plasma is preferably used, it may have a material of aluminum or its alloy.

On the other hand, the fine irregularities formed on the surface of the substrate 10 by the cover of the cover 200 is formed unevenly according to the position of the center and the outer portion with respect to the upper surface of the tray 30 or the upper surface of the substrate support 130. Can be.

Therefore, the cover member 200 may maintain a constant distance from the top surface of the tray 30 or the top surface of the substrate support 130 to the bottom surface of the cover plate 220, or may be configured differently in the central portion and the outer portion. .

In addition, the cover plate 210 may have an opening ratio formed by the opening 211 different from the central portion and the outer portion, and the opening ratio of the central portion may be higher than that of the outer portion.

The support part 220 is configured to partition the processing space S and the cover space while maintaining a constant distance from the tray 30 on which the cover plate 210 and the substrate 10 are seated. It may be formed integrally or separately from the cover plate 210. In this case, the support part 220 may have a material different from that of the cover plate 210.

The cover part 200 has a pair of tabs (not shown) on the support part 220 to be transported up and down by a separate transfer device (not shown) to cover the tray 30 on which the substrate 10 is seated. This can be installed.

The cover part 200 is configured to cover the tray 30 on which the substrate 10 is seated in the substrate processing apparatus, that is, the process chamber 100, or the substrate 10 seated on the tray 30 from the outside. ) May be transferred together with the tray 30 in a closed state.

One or more sag prevention pillars (not shown) may be installed between the cover 200 and the tray 30 to maintain a predetermined distance from the bottom of the cover 200 and the tray 30.

The sag prevention pillar may have any configuration as long as it maintains a gap between the bottom surface of the cover part 200 and the tray 30, and is made of aluminum, aluminum alloy, silicon, Teflon, etc. in consideration of being exposed to plasma. It is desirable to have.

Meanwhile, an outer dummy substrate 310 having the same material as that of the substrate 10 such as silicon may be additionally installed along the edges of the substrates 10 seated on the tray 30. In particular, the substrates 10 positioned at the center portion of the substrate 10 may be used as the outer dummy substrate, and the outer dummy substrate 310 may be disposed at the edge of the substrate 10 positioned at the edge of the substrate 10 adjacent to the substrate 10. This can be installed in addition.

Here, the outer surface of the tray 30 is inserted into a portion of the outer dummy substrate 310 in the depth direction of the tray 30 in order to prevent the position movement of the outer dummy substrate 310 when the tray 30 is moved. Grooves (not shown) may be formed.

Preferably, the substrate 10 and the outer dummy substrate 310 are made of the same material. When the substrate 10 is single crystal or polycrystalline silicon, the outer dummy substrate 310 is also preferably made of the same material as single crystal or polycrystalline silicon. .

On the other hand, as described above, the irregularities formed on the surface of the substrate 10 by the cover of the cover 200 is formed non-uniformly according to the position of the center and the outer portion, in particular, the rectangular tray 30 According to an experiment on the surface of the substrate 10 positioned near the vertex with respect to the upper surface or the upper surface of the substrate support 130, there is a problem that a color difference as shown in FIG. 6A is generated.

Accordingly, the substrate processing apparatus according to the present invention may include a tray corresponding to at least one vertex of a vertex of a quadrangular array in which a plurality of substrates 10 are formed as illustrated in FIGS. 2, 3A, and 3B ( At least one corner dummy substrate 320 including the same component as the main component of the substrate 10 is seated at the corner portion of the substrate 10, that is, the corner dummy substrate 320 is disposed at the corner portion of the tray 30. The substrate treatment is preferably performed in a state in which the tray 30 is seated on two sides forming at least one vertex of the vertex of the rectangular array.

The corner dummy substrate 320 is a member for improving the color difference formed at the vertex of the rectangular array, that is, the substrate 10 positioned near the vertex of the tray 30, and the substrate 10 like the outer dummy substrate 310. It is preferable that the same material as the substrate 10 or the main component of the substrate 10 is used. The outer dummy substrate 310 may be integrally installed with the corner dummy substrate 320 corresponding to the corner dummy substrate 320.

The corner dummy substrate 320 may be seated over one or more substrates 10 based on the vertices of the tray 30 so as to sufficiently achieve the color difference improvement effect.

Of course, the corner dummy substrate 320 may be seated over half or more of the short side length of the rectangular substrate 10 as an effect of improving the color difference with respect to the substrate 10 positioned at the vertex of the tray 30.

The reason for using the corner dummy substrate 320 without increasing the width of the at least one outer dummy substrate 310 installed at the edge of the rectangular array of the plurality of substrates 10 is that the outer dummy substrate is expensive compared to the color difference improvement effect. The use of the 310 has a problem of increasing the manufacturing cost of the substrate.

On the other hand, by using the corner dummy substrate 320 it is possible to minimize the use of the dummy substrate to achieve the optimum color difference improvement effect for the substrate 10 located at the vertex.

Meanwhile, the substrate 10 has a rectangular shape such as a rectangle, and the width W1 of the outer dummy substrate 310 is 5 to 15% of the length W0 of one side (short side) of the substrate 10 and the corner dummy substrate. The width W2 of the 320 is preferably 10 to 80% of the length W0 of the short side of the substrate 10, where the width W2 of the corner dummy substrate 320 is of the length W0 of the short side. It is more preferable that it is 15%-30%.

In addition, the width W1 of the outer dummy substrate and the width of the corner dummy substrate W2 may be selected according to the design and the design.

That is, the width W1 of the outer dummy substrate may be 5-20% of the short side length W0 of the substrate.

The width W2 of the corner fine substrate may be 10 to 80% of the short side length W0 of the substrate 10.

In addition, the width W1 of the outer dummy substrate and the width of the corner dummy substrate W2 may be determined by the sum thereof.

That is, the sum of the width W1 of the outer dummy substrate and the width W2 of the corner dummy substrate is preferably 15 to 100% of the short side length W0 of the substrate, and 15 to 35 times the short side length W0 of the substrate. It is more preferable that it is%.

Meanwhile, the numerical values of the widths W1 and W2 of the outer dummy substrate 310 and the corner dummy substrate 320 are examples of preferred examples, and are not necessarily limited thereto.

However, the reason for limiting the widths W1 and W2 of the outer dummy substrate 310 and the corner dummy substrate 320 as described above is that when the width is too small, the installation effect of the dummy substrate cannot be achieved.

And the width (W1, W2) of the outer pile substrate 310 and the corner pile substrate 320 is preferably as large as possible only looking at the side of the uneven formation. If the width is too large, there is a problem that increases the manufacturing cost due to excessive use of the dummy substrate.

In addition, the outer dummy substrate 310 and the corner dummy substrate 320 are in close contact with each other, and the outer dummy substrate 310 has a gap between the substrate 10 and the neighboring substrate 10 to form a uniform processing environment. It may have a spacing smaller than or substantially equal to each other.

On the other hand, the substrate 10 is generally transported seated on the tray 30, the corner dummy substrate 320 seated on the tray 30 is in accordance with the transfer process, the cover of the cover 200 and release The position may be changed to cause problems such as disturbing the mounting of the substrate 10.

Accordingly, as shown in FIG. 3B, a corner of a part of the corner dummy substrate 320 is inserted in the depth direction of the tray 30 to prevent the position movement of the corner dummy substrate 320 on the upper surface of the tray 30. Receiving groove 31 may be formed.

Meanwhile, when the corner dummy substrate 320 is additionally installed, the substrate support 130, the tray 30, and the cover part 200 become larger by the width of the corner dummy substrate 320, or the substrate 10 is seated. To reduce the amount of

However, when the size of the substrate support 130, the tray 30, and the cover part 200 is increased in order to install the corner dummy substrate 320, the manufacturing cost of the device is increased, and the substrate 10 is seated. Reducing the portion has a problem of lowering the productivity of the substrate 10.

Therefore, as shown in FIGS. 2 and 3B, the support part 220 has a rectangular shape such that the inner surface of the plurality of substrates 10 is substantially rectangular, corresponding to the rectangular array of the plurality of substrates 10, and the corner dummy substrate 320. It is preferable to be formed concave outward from the portion corresponding to the).

In particular, as shown in FIGS. 2 and 3A, the support part 220 may have a dummy substrate accommodating groove 221 formed to be concave outward from a portion corresponding to the corner dummy substrate 320.

Meanwhile, as shown in FIG. 4, the support part 220 is formed of a plate member instead of forming the dummy board receiving groove 221 to correspond to the corner dummy substrate 320. The outer dummy substrate 310 and the corner dummy substrate 320 may be configured to have a shape corresponding to an outline formed by the outer dummy substrate 310 and the corner dummy substrate 320.

In addition, as shown in FIG. 5, the support part 220 has a quadrangular shape such that the inner surface of the plurality of substrates 10 is substantially rectangular in shape to correspond to the rectangular array of the plurality of substrates 10. It may be configured to have the same distance from the edge of the dummy substrate 310.

At this time, each corner dummy substrate 320 is installed at a distance GA with the neighboring corner dummy substrate 320.

Meanwhile, as described above, the corner dummy substrate 320 is formed through the tray 30 on the substrate support 130 over two sides forming a vertex at at least one vertex of the vertex of the quadrangular array of the plurality of substrates 10. When the substrate treatment is carried out in the state of seating, the color difference formed on the surface of the substrate 10 located at the vertex is remarkably as shown in FIG. 6B as a result of the experiment as shown in FIG. 2. The improvement was confirmed.

Meanwhile, the substrate treating method performed by the substrate treating apparatus having the above configuration may be performed as follows.

That is, in the substrate processing method according to the present invention, the cover part is formed on a plurality of substrates 10 arranged in n × m (n, m is two or more natural numbers) through the tray 30 on the substrate support 130. It is characterized in that the substrate treatment is performed in a state of covering 30).

Here, the cover part 30 covers the substrates 10 seated on the tray 30 before being introduced into the process chamber 100, or by a separate cover device (not shown) in the process chamber 100. (10) can be repaid.

In addition, the substrate treatment may include two or more corner dummy substrates 320 including the same components as the main components of the substrate 10 to form vertices at at least one of the vertices of the rectangular array of the plurality of substrates 10. Substrate treatment is performed in a state in which the substrate support 130 is seated on the substrate support 130 through the tray 30.

In addition, the substrate treatment may be performed in various ways, and as described above, may be a process of forming a plurality of fine irregularities on the surface of a crystalline silicon substrate, particularly a polycrystalline silicon substrate, used as a solar cell by reactive ion etching.

Since the above has been described only with respect to some of the preferred embodiments that can be implemented by the present invention, the scope of the present invention, as is well known, should not be construed as limited to the above embodiments, the present invention described above It will be said that both the technical idea and the technical idea which together with the base are included in the scope of the present invention.

10 substrate 30 tray
100: process chamber 200: cover part
210: cover plate 220: support part
310: outer pile substrate 320: corner pile substrate

Claims (19)

A process chamber forming a processing space for substrate processing; A substrate support provided in the process chamber and supporting a tray in which a plurality of substrates are seated in a rectangular array of n × m (n, m being two or more natural numbers); A substrate including a cover part formed with a plurality of openings formed therethrough, the cover part covering the substrate at a distance from the substrate, and a support part supporting the cover plate so as to be installed at a distance from the substrate; In the processing apparatus,
The substrate treating apparatus may include one or more corner dummy substrates on the edge portion of the tray corresponding to at least one of the vertices of the quadrangular array in which a plurality of substrates are disposed, and the same component as the main component of the substrate is seated. Substrate processing apparatus, characterized in that. The method according to claim 1,
The corner dummy substrate is a substrate processing apparatus, characterized in that seated over one or more substrates on the basis of the vertex. The method according to claim 1,
And a corner accommodating groove in which a part of the corner dummy substrate is inserted in a depth direction of the tray to prevent a position shift of the corner dummy substrate when the tray is moved. The method according to claim 1,
And at least one outer dummy substrate at the edge of the rectangular array of the plurality of substrates further comprising a component such as a main component of the substrate. The method of claim 4,
And an outer receiving groove formed on an upper surface of the tray to insert a portion of the outer dummy substrate in a depth direction of the tray in order to prevent the position shift of the outer dummy substrate when the tray is moved. The method of claim 4,
The substrate has a rectangular shape, the width of the outer pile substrate is 5 to 15% of the length of the short side of the substrate, the width of the corner pile substrate is characterized in that 10 to 80% of the short side length of the substrate Substrate processing apparatus. The method of claim 6,
The width of the corner pile substrate is a substrate processing apparatus, characterized in that 15 to 30% of the length of the short side of the substrate. The method of claim 4,
The width of the outer dummy substrate is a substrate processing apparatus, characterized in that 5 to 20% of the length of the short side of the substrate. The method of claim 4,
The sum of the width of the outer dummy substrate and the width of the corner dummy substrate is 15 to 100% of the length of the short side of the substrate. The method according to claim 9,
The sum of the width of the outer dummy substrate and the width of the corner dummy substrate is 15 to 35% of the short side length of the substrate. The method according to claim 1,
The width of the corner fine substrate is a substrate processing apparatus, characterized in that 10 to 80% of the length of the short side of the substrate. The method of claim 4,
The support portion corresponds to a rectangular array of the plurality of substrates and has a substantially rectangular shape having an inner surface.
The inner surface of the support portion has the same distance from the edge of the outer pile substrate,
Wherein each corner dummy substrate is installed at a distance from a neighboring corner dummy substrate. The method of claim 4,
The outer dummy substrate is a substrate processing apparatus, characterized in that the part corresponding to the corner dummy substrate is integrally installed with the corner dummy substrate. The method according to claim 1,
The support portion corresponds to a rectangular array of the plurality of substrates and has a substantially rectangular shape having an inner surface.
Substrate processing apparatus, characterized in that formed in concave outward from the portion corresponding to the corner dummy substrate. The method according to claim 1,
The support portion has a substantially rectangular shape in the form of the outer surface,
And a dummy substrate accommodating groove formed to be concave outward from a portion corresponding to the corner dummy substrate. The method according to any one of claims 1 to 15,
And the corner dummy substrate is crystalline silicon. A cover member which is a cover part of the substrate processing apparatus according to claim 16. The tray of the substrate processing apparatus of Claim 16. As a substrate processing method by the substrate processing apparatus according to claim 16,
In the substrate processing method, a state in which at least one corner dummy substrate including the same component as a main component of the substrate is seated at a corner of a tray corresponding to at least one of the vertices of a rectangular array in which a plurality of substrates are disposed. Substrate processing method characterized in that to perform a substrate treatment.

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