KR20120042383A - Substrate tray and substrate processing equipment using the substrate tray - Google Patents

Substrate tray and substrate processing equipment using the substrate tray Download PDF

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Publication number
KR20120042383A
KR20120042383A KR1020100104063A KR20100104063A KR20120042383A KR 20120042383 A KR20120042383 A KR 20120042383A KR 1020100104063 A KR1020100104063 A KR 1020100104063A KR 20100104063 A KR20100104063 A KR 20100104063A KR 20120042383 A KR20120042383 A KR 20120042383A
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KR
South Korea
Prior art keywords
substrate
tray
region
insulating member
substrates
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KR1020100104063A
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Korean (ko)
Inventor
배준성
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주식회사 원익아이피에스
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Priority to KR1020100104063A priority Critical patent/KR20120042383A/en
Publication of KR20120042383A publication Critical patent/KR20120042383A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: A substrate tray and a substrate processing apparatus using the same are provided to attach an insulating member on a region of a substrate tray in which a substrate is not arranged. CONSTITUTION: A plurality of substrates(S) is mounted on a tray main body(122). The tray main body is divided into a substrate arrangement region(II) and other regions(I,III,IV) in which the substrate is not arranged. An insulating member(124) is attached on the regions of the tray main body in which the substrate is not arranged. The insulating member is formed with electricity insulating materials. An outer frame(126) is arranged along the boundary of the tray main body.

Description

Substrate tray and substrate processing equipment using the substrate tray}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate tray (substrate tray) and a substrate processing apparatus using the same.

The substrate processing apparatus includes a process chamber defining a closed processing space and performing a predetermined substrate processing process such as deposition, etching, and cleaning. The substrate processing apparatus also includes a tray support on which one or a plurality of substrates to be processed can be placed, a gas supply unit for supplying process gas into the process chamber, and a gas discharge for discharging a reaction product or residual process gas out of the process chamber. A unit and temperature control means such as a heater and / or a cooler for controlling the temperature inside the process chamber. The substrate to be processed in the substrate processing apparatus includes a semiconductor wafer, a substrate for a flat panel display, a substrate for a solar cell, and the like.

Recently, due to the depletion of fossil fuels or environmental problems caused by the use of fossil fuels, environmentally friendly alternative energy is attracting attention, and solar energy is also one of the strongest environmentally friendly alternatives. Solar energy may convert solar energy into electrical energy using a semiconductor device called a solar cell. The solar cell has a p-n junction structure as a basic structure. In the p-n junction structure, diffusion due to a concentration gradient of carrier occurs between the p-type semiconductor region and the n-type semiconductor region. In addition, due to carrier diffusion, a difference in space charge occurs, thereby forming an electric field therein. When the carrier diffusion component and the drift component by the electric field become the same, the p-n junction structure becomes parallel. When a photon having energy above the bandgap of the p-n junction diode is incident in a parallel state, electrons subjected to light energy are excited to a conduction band in a valence band. As a result, electron-hole pairs are generated. When electrons and holes are separated and flow through the anode terminal of the p-n junction diode connected to an external circuit, current is generated from the solar cell.

In the solar cell manufacturing process, various processes such as deposition, exposure, etching, and cleaning are performed in each substrate processing apparatus. These processes can be performed continuously in an inline manner to improve productivity. Among these processes, a deposition process, an etching process, and the like are performed in a limited space in a substrate processing apparatus called a "process chamber." For example, chemical vapor deposition (CVD), atomic layer deposition (ALD) processes, dry etching processes, and the like, may include a substrate holder and a shower head assembly. It is performed in the process chamber of the substrate processing apparatus provided with.

Some processes of manufacturing solar cells (eg, deposition processes or etching processes) use plasma to improve productivity or form high quality thin films or fine patterns. For example, by plasmalizing all or part of the process gas, the etching rate and / or etching selectivity may be increased or the deposition rate of the thin film may be improved. However, since the plasma is highly reactive, the process may be greatly influenced by the process conditions and the surrounding environment, and thus, more precise process control and setting of the surrounding environment are required.

The single substrate processing apparatus loads one substrate onto a tray support to perform a process. Such a single substrate processing apparatus has an advantage that uniform process processing can be performed for a plurality of substrates, but has a disadvantage in that productivity is low. On the other hand, a plurality of substrate processing apparatus simultaneously loads a plurality of substrates on a tray support to perform a process at the same time. The multiple substrate processing apparatus is more productive than a single substrate processing apparatus because the multiple substrate processing apparatus processes a process by arranging a plurality of substrates in a horizontal or vertical direction in a row or in a circular manner on a tray support. In such a plurality of substrate processing apparatus, it is important to make a uniform process for the entire substrate.

In order to proceed with a plurality of processes, the substrate must be transferred from the substrate processing apparatus on which the process is completed to the substrate processing apparatus on which the next process is to be performed. Small substrates, such as 9-inch wafers or 12-inch wafers, can be loaded vertically in a cassette or the like to transfer a large amount at a time. However, a relatively large solar cell substrate is transported in a substrate tray. In general, one or more substrates are transported in a matrix form in a substrate tray, and a predetermined substrate treatment process may be performed. .

The substrate is disposed inwardly by a predetermined distance from the edge of the substrate tray so as to prevent falling from the substrate tray during transfer of the substrate. In addition, an outer frame may be provided at an edge of the substrate tray for arranging and fixing the plurality of substrate trays adjacent to each other and / or for convenience of operation of the substrate tray. As a result, not only the area | region (henceforth a "board | substrate arrangement | positioning area") in which a board | substrate is arrange | positioned but the area | region in which a board | substrate is not arrange | positioned (henceforth a "substrate non-positioning area | region") exist in a board | substrate tray. The substrate non-positioning region includes an 'edge region' corresponding to an outer portion of the substrate placing region together with a 'sub substrate region' corresponding to a gap between adjacent substrates.

The substrate tray is typically made of a material having excellent thermal conductivity and / or electrical conductivity, and excellent thermal stability and processability. For example, the substrate tray may be made of graphite having a thermal conductivity and / or electrical conductivity 10 to 1,000 times higher than carbon. By the way, when the substrate tray is made of a material having high electrical conductivity such as graphite, there is a significant difference in thermal conductivity and / or electrical conductivity between the substrate placement region and the substrate non-positioning region. Such thermal and / or electrical conductivity differences can result in process nonuniformity depending on where the substrate is placed and / or within the substrate.

One problem to be solved by the present invention is to provide a substrate tray and a substrate processing apparatus using the same that can achieve a uniform process irrespective of the position of the substrate.

Another problem to be solved by the present invention is to provide a substrate tray and a substrate processing apparatus using the same that can achieve an overall uniform process despite the presence of the substrate non-located region.

The substrate tray according to an embodiment of the present invention for solving the above problems is a tray main body that can be partitioned into a substrate disposition region on which a plurality of substrates can be mounted and a substrate non-location region on which the substrate is not mounted; And an insulating member attached to an upper surface of the tray main body to cover at least a portion of the substrate non-positioning area. The insulating member may cover all of the non-substrate region or a portion thereof, for example the edge region may cover all or part of the region between the substrates.

The substrate processing apparatus according to an embodiment of the present invention for solving the above problems is a process chamber defining a closed processing space, a tray support portion installed in the process chamber to support a substrate tray on which a plurality of substrates are loaded And a gas supply unit installed above the tray support to inject a process gas into the processing space. The substrate tray may include a tray main body that may be divided into a substrate disposition region in which a plurality of substrates may be mounted and a substrate non-location region in which the substrate is not mounted, and at least a portion of the substrate non-location region. It may include an insulating member attached to the upper surface of the main body.

According to the present invention, an insulating member is attached to all or part of the non-positioning region on the substrate tray. Since the insulating member has the same physical and chemical properties as the substrate, the front surface of the substrate tray has the same electrical properties. According to this, the substrate tray exhibits the same surface effect as that of the substrate even in a region where the substrate is not disposed, and thus a uniform process can be achieved regardless of the position where the substrate is placed in the substrate processing step, in particular, the substrate processing step using plasma. .

1 is a block diagram showing a schematic configuration of a substrate processing apparatus including a substrate tray according to an embodiment of the present invention.
2 is a perspective view illustrating a shape of a substrate tray according to an exemplary embodiment.
3 is a plan view illustrating a state in which a plurality of substrates are mounted in an array of 5 에 5 in the substrate tray of FIG. 2.
4 is an example of sectional drawing which cut | disconnected the board | substrate tray of FIG. 3 along the XX 'line.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The terms used are terms selected in consideration of the functions in the embodiments, and the meaning of the terms may vary depending on the user, the intention or custom of the operator, and the like. Therefore, the meaning of the terms used in the embodiments to be described later, according to the definition if specifically defined herein, and if there is no specific definition should be interpreted to mean generally recognized by those skilled in the art.

1 is a block diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. Hereinafter, an embodiment of the present invention will be described by taking a substrate processing apparatus for manufacturing a solar cell as an example, but this is merely exemplary, and the same can be applied to a substrate processing apparatus for manufacturing a semiconductor or a substrate processing apparatus for manufacturing a flat display. Subsequently, the substrate processing apparatus to be described later may be separately installed or may form part of an inline type substrate processing system.

Referring to FIG. 1, a substrate processing apparatus 100 for manufacturing a solar cell may include a process chamber 110, a tray supporter 130 on which a substrate tray 120 may be supported, and a showerhead assembly. (shower head assembly 140), and a plasma generating apparatus. Although not shown in the drawings, the substrate processing apparatus 100 for manufacturing a solar cell may include a heater and / or cooling means or a process for controlling the temperature of the inside of the process chamber 110 or the substrate S. A vacuum pump may be further provided to adjust the pressure inside the chamber 110 or to discharge extra process gas or process by-products to the outside of the process chamber 100.

The substrate processing apparatus 100 for manufacturing a solar cell may be a plurality of substrate processing apparatuses for simultaneously performing a predetermined process on a plurality of substrates S. More specifically, the substrate processing apparatus 100 may include a tray support 130 having a polygonal shape such as a circle or a square in which one or a plurality of substrate trays 120 on which a plurality of substrates S may be loaded at a time may be seated. It can be provided. For example, when the tray support 130 has a polygonal shape such as a quadrangle, one substrate tray 120 is disposed on the tray support 130, or a plurality of substrate trays 120 is provided in the tray support 130. It may be arranged in line or in matrix form on the phase.

Hereinafter, each of the components included in the substrate processing apparatus 100 for manufacturing a solar cell will be described in more detail.

The process chamber 110 has a space in which a predetermined process of processing a substrate proceeds, that is, a processing space. There is no particular limitation on the method of configuring the process chamber 110. For example, a chamber body 112 having an open upper side and an upper lid coupled to open and close at an upper side of the chamber body 112 may be formed. 114). In addition, the chamber body 112 may be provided with one or more gates 102 and 104 through which the substrate tray 120 on which the plurality of substrates S are mounted may enter and exit. The chamber body 112 and the upper lead 114 may be formed of a metal having high corrosion resistance such as aluminum (Al) or an aluminum alloy.

There is no particular limitation on the type of process that may proceed in the process chamber 110. For example, a deposition process for forming a predetermined material film on the substrate S, an etching process for removing or patterning the material film formed on the substrate S or an upper portion thereof, or a heat treatment process for diffusion or sintering, etc. It may be performed in the process chamber 110. In particular, in the process chamber 110 of the plurality of substrate processing apparatus 100, a plasma enhanced chemical vapor deposition (PECVD) process or a plasma enhanced process in which all or part of a process gas is converted into plasma to perform a predetermined process. A plasma deposition process such as a plasma enhanced atomic layer deposition (PEALD) process may be performed efficiently, but is not limited thereto.

The showerhead assembly 140 is an example of a gas supply unit installed above the process chamber 110 to inject a process gas into a processing space. Process gas is supplied to the showerhead assembly 140 through a predetermined gas supply line installed outside the substrate processing apparatus 100, and the showerhead assembly 140 processes the front surface of the tray support 130 uniformly. Inject gas.

The tray support 130 is disposed to face each other with the showerhead assembly 140 and the processing space interposed below the inside of the process chamber 110. The tray support 130 supports the substrate tray 120 on which a plurality of substrates are mounted or stacked. The tray support 130 may have one or a plurality of grooves on which one or a plurality of substrate trays 120 may be seated, or a flat shape. The tray support 130 may be provided with heating means (not shown) for heating the substrate to a predetermined process temperature and / or cooling means (not shown) for cooling the heated substrate.

The substrate processing apparatus 100 may also further include an isolation member 135 disposed on the side of the tray support 135. The isolation member 135 isolates the tray support 130 and the parts positioned below it from the processing space to block the process gas or the like from contacting the tray support 130 or the like. The isolation member 135 may be formed of a material having a high corrosion resistance to a process gas such as an etching gas or a cleaning gas.

In order to perform the plasma deposition process, the solar cell substrate processing apparatus 100 may include a plasma generator. In the figure, a shower head assembly 140 is used as a plasma generator and a radio frequency (RF) electrode and a tray support 130 is used as a ground electrode, which is merely exemplary. For example, in the plasma generating apparatus installed outside the process chamber, the process gas is plasma-formed and supplied into the process chamber 110, or the process gas is plasma-processed inside the showerhead assembly 140. A radical assisted (RA) plasma method for supplying the inside of the chamber 110 may be used as the plasma generating apparatus.

The substrate tray 120 is a means for holding a plurality of polygonal cell substrates S to be processed at the same time. In this case, a plurality of cell substrates S (for example, 25) may be grouped and placed in the substrate tray 120 to be loaded on the tray support 130. The substrate loaded on the substrate tray 120 may be a polygonal cell substrate such as a solar cell as well as a circular substrate such as a wafer. The polygonal cell substrate may be, for example, a rectangular substrate such as a square or a rectangle, or an octagonal substrate with four corners cut out of such a rectangle. However, the shape of the cell substrate is not limited thereto, and may be a triangle, a pentagon, a hexagon, or the like.

 The plurality of polygonal cell substrates S are disposed not to overlap the upper surface of the substrate tray 120 so that the plurality of polygonal cell substrates S may be loaded into the process chamber 110 and the process may be performed at the same time. For example, the plurality of substrates S may be spaced apart from each other and disposed on the upper surface of the substrate tray 120 in a matrix form. To this end, a substrate guide means (not shown) may be provided on the upper surface of the substrate tray 120 so that the plurality of polygonal cell substrates S may be disposed at an accurate position, which is an optional component. . And one or a plurality of polygonal cell substrates (S) are arranged to be located inwardly by a predetermined distance from the edge of the substrate tray 120, which is convenient for handling the substrate tray with the fall prevention of the substrate (S) during transport It is for the back. In addition, a frame made of stainless steel or the like is installed at the edge of the substrate tray 120 to improve handling of the substrate tray 120 or to prevent wear and the like on the substrate tray 120 during handling. There may be.

2 is a perspective view illustrating a shape of a substrate tray according to an exemplary embodiment, FIG. 3 is a plan view illustrating a board mounted on the substrate tray of FIG. 2, and FIG. 4 is a view illustrating the substrate tray of FIG. 3. It is an example of sectional drawing cut along the line. 2 to 4 may be a substrate tray for manufacturing a solar cell, but is not limited thereto. The substrate tray 120 of the rectangular shape disclosed in FIGS. 2 to 4 is an example in which a plurality of rectangular cell substrates can be arranged at one time (the dotted lines shown in FIG. 3 are arranged in the form of 5 ㅧ 5 of the plurality of substrates). It is only to show that it can be, but not to limit the area in which the substrate can be placed), and according to the number and arrangement of the cell substrates and / or the shape of the cell substrate that can be contained in the substrate tray 120 The planar shape of the substrate tray 120 may also be changed. 2 to 4, the substrate tray 120 includes a tray body 122, an insulating member 124, and an outer frame 126.

The tray body 122 is for mounting one or a plurality of substrates S, and may have a plate shape having a large surface area. The tray body 122 may not only be easily deformed even at high temperatures, but may be made of a material having excellent thermal conductivity or electrical conductivity and excellent thermal stability and processability. This is to allow the substrate S to be introduced into the process chamber in the state in which the substrate S is contained in the substrate tray 120 so as to efficiently perform or reuse a substrate processing process such as a plasma process. For example, the tray body 122 may be made of graphite, quartz, or the like, but is not limited thereto. In addition, the tray body 122 may be formed of a coating material made of a material resistant to a cleaning fluid such as plasma and / or fluoride or chloride on the surface of the base metal material such as graphite or quartz. The coating may be formed of one or a plurality of materials selected from the group consisting of aluminum (Al), aluminum alloys, alumina (Al 2 O 3 ), yttria (Y 2 O 3 ), nickel (Ni), and nickel alloys. . There is no particular limitation on the method of forming the coating.

The tray body 122 may have a planar polygonal shape (eg, a rectangular shape as shown in FIGS. 2 and 3), and there is no particular limitation on the shape. In addition, the tray body 122 may be composed of a single plate or a structure in which a plurality of plates are arranged side by side and coupled to each other. In addition, there is no particular limitation on the number of substrates S that can be mounted on the tray body 122 or the arrangement method of the substrates S. For example, only one substrate S that is considerably large may be mounted on the tray body 122. 2 to 4 show that 25 substrates S can be arranged and mounted in a matrix of 5 ㅧ 5, but this is also merely illustrative.

The tray body 122 may be divided into a substrate placement region II (see FIG. 4) and a substrate non-location region (I, III and IV, see FIG. 4). In FIG. 4, the inter-substrate region IV, which is an empty area between adjacent substrates S, is also shown to be included in the substrate arrangement region II, but this is merely for convenience of illustration and substantially no substrate is disposed. It can be seen that the area is not. However, the inter-substrate region IV does not necessarily exist in the tray main body 122 (for example, when one substrate S is mounted on the tray main body 122 or the substrates S are disposed to contact each other. Etc.), even if present, it can be ignored if the width of the region IV between substrates (the spacing between adjacent substrates S) is quite small.

One or a plurality of substrates S may be disposed on the substrate arrangement region II of the tray body 122. In the latter case, the substrates S may be spaced apart from each other by the region IV between the substrates. According to the exemplary embodiment, a predetermined guide means, for example, a groove structure on which the substrate S may be seated, is formed on the upper surface of the tray main body 122 on the tray main body 122 for effective and stable arrangement of the substrate S. It may be. In this case, the inter-substrate region IV can protrude from the groove structure. Alternatively, a guide member (eg, a band-shaped insulating member) may be additionally attached to the inter-substrate region IV so that the substrate S may be stably mounted on the tray body 122.

An insulating member 124 is attached to a portion of the substrate non-located regions I, III, and IV of the tray body 122. The insulating member 124 may be attached to at least one of the edge regions I and III and the region IV between the substrate or to all regions. The insulating member 124 may be easily attached or detached from the tray body 122, but is not necessarily limited thereto. The insulating member 124 is for preventing the edge regions I and III and / or the inter-substrate region IV from being exposed to the process gas or the like during the substrate processing process, and therefore the edge regions I and III or the inter-substrate region ( It is desirable to be as wide as possible to cover a lot of IV).

Insulating member 124 is an integral member (when the rectangular ring shape in the case of Figure 3) is a single member or a combined member (for example, in the case of Figure 3) formed by combining a plurality of small members Four bands corresponding to each side may be separately attached to the tray body 122 so as to be entirely annular). The thickness of the insulating member 124 is not particularly limited, but the thickness of the insulating member 124 is preferably as thin as possible so as to minimize the influence on the substrate S mounted on the substrate placing region II. For example, the insulating member 124 may be formed to a thickness of about 3 mm or less.

The insulating member 124 protects the entirety of the substrate S by preventing the edge regions I and III and / or the inter-substrate region IV from being exposed to the process gas, in particular the plasma-processed process gas, during the substrate processing process. Ensure a uniform process. Here, the uniformity of the process is, when a plurality of substrates (S) is mounted on the tray body 122 to achieve a uniform process for the entire substrate (S), as well as position in the large area of the substrate (S) It involves achieving a uniform process regardless. To this end, the insulating member 124 is formed of a material having characteristics similar to those of the substrate S mounted on the substrate arranging region II and / or has little effect on the process gas (particularly, the plasmalized process gas). It can be formed of a material. For example, the insulating member 124 may be formed of an electrically insulating material such as ceramic.

As described above, in order to manufacture a solar cell, a substrate tray 120 on which one or a plurality of substrates S is mounted is loaded into a process chamber to perform an etching process, an cleaning process, a heat treatment process, or the like. Some of the processes performed may be processes using plasma. For example, a deposition process using plasma by loading an existing substrate tray, that is, a substrate tray having no insulating member 126 attached to the edge regions I and III and / or the inter-substrate region IV, to the process chamber. Assume (eg, a plasma enhanced chemical vapor deposition (PECVD) process). Since the PECVD process utilizes a highly reactive plasma state, it is necessary to keep the plasma density uniform within the process chamber or to limit the plasma to only the desired area. The plasma density inside the process chamber can be controlled or influenced by a number of factors. The local physical and chemical properties of the process chamber bottom, ie, the substrate tray, also affect the plasma density inside the process chamber.

More specifically, the ground effect of the PECVD process is different, so that the substrate adjacent to the edge regions I and III or the inter-substrate region IV (or the edge portion of the substrate in a single substrate processing apparatus) or the portion and edge region of the substrate (I) And III) or between the substrate (or the central portion of the substrate in a single substrate processing apparatus) or the portion of the substrate that is relatively far from the inter-substrate region IV.

In addition, as the PECVD process proceeds, an unnecessary film is formed in the edge regions I and III and the region IV between the substrates. Also, if the PECVD process is repeatedly performed several times with another substrate, the edge regions I and III and The formed film continues to accumulate in the inter-substrate region IV. Films formed on the substrate non-located regions I and III and the like, which are not removed through an iterative cleaning process or an etching process, become obstacles in ensuring uniformity of subsequent deposition processes. In addition, the difference in thickness of the accumulated film may also hinder the process uniformity in the repeated process. In order to prevent this, if the maintenance process is frequently performed, not only can the manufacturing cost be increased, but the life of the substrate tray 120 can be shortened.

Therefore, in the embodiment of the present invention, the insulating member 124 is attached to at least one of the substrate tray 120, more specifically, the edge regions I and III and the inter-substrate region IV of the tray body 122. By doing so, it is possible to solve the above-mentioned process nonuniformity problem and the problem of an increase in manufacturing cost. More specifically, by attaching an insulating member 124 such as ceramic or the like to the edge regions I and III and / or the region IV between the substrates, the substrate arrangement region II on which one or more substrates S is mounted. And the physical and chemical properties of the substrate unpositioned regions I, III, and IV to which the insulating member 124 is attached may be similar, thereby improving process uniformity in a PECVD process or the like. In the maintenance of the substrate tray 120, by cleaning or etching or replacing only the insulating member 124 instead of the tray body 122, the life of the substrate tray 120 can be extended even more, and a maintenance cycle can be achieved. By shortening the process uniformity can be improved.

2 to 4, the substrate tray 120 includes an outer frame 126 disposed along the circumference of the tray body 122 so that the tray body 122 can be mounted. The outer frame 126 is to improve handling of the substrate tray 120 or to prevent abrasion or the like from occurring in the tray body 122 during the handling. The outer frame 126 may be, for example, an annular shape having a step inward so that the tray body 122 may be seated. The outer frame 126 may be formed of a material having excellent chemical stability and excellent durability, such as stainless steel.

The above description is only an embodiment of the present invention, and the technical idea of the present invention should not be construed as being limited by this embodiment. The technical idea of the present invention should be specified only by the invention described in the claims. Therefore, it will be apparent to those skilled in the art that the above-described embodiments may be implemented in various forms without departing from the spirit of the present invention.

100: substrate processing apparatus for manufacturing solar cells
110: process chamber
120: substrate tray
122: tray body
124: insulation member
126: outer frame
130: tray support
135: absence of isolation
140: shower head assembly

Claims (10)

A tray main body which is partitioned into a substrate arranging region in which a plurality of substrates can be mounted and a substrate unpositioning region in which the substrate is not mounted; And
And an insulating member attached to an upper surface of the tray main body to cover at least a portion of the non-positioned substrate area. The method of claim 1,
And the insulating member covers at least a portion of an inter-substrate region among the non-positioned regions of the substrate. The method of claim 1,
And the insulating member covers at least a portion of an edge region among the non-positioned regions of the substrate. 4. The method according to any one of claims 1 to 3,
And the insulating member is formed of an electrically insulating material. The method of claim 4, wherein
And the electrically insulating material is ceramic. A process chamber defining a closed processing space;
A tray support part installed in the process chamber to support a substrate tray on which a plurality of substrates are stacked; And
A gas supply unit installed at an upper side of the tray support part to inject a process gas into the processing space;
The substrate tray may cover at least a portion of the tray body and the substrate non-location area, which may be partitioned into a substrate placement area in which one or a plurality of substrates may be mounted, and a substrate non-location area in which the substrate is not mounted. A substrate processing apparatus comprising an insulating member attached to an upper surface of the tray body. The method of claim 6,
And the insulating member covers at least a portion of the inter-substrate region among the non-positioned regions of the substrate. The method of claim 7, wherein
And the insulating member covers at least a portion of an edge region among the non-positioned regions of the substrate. The method according to any one of claims 6 to 8,
The insulating member is formed of an electrically insulating material. 10. The method of claim 9,
And the electrically insulating material is a ceramic.
KR1020100104063A 2010-10-25 2010-10-25 Substrate tray and substrate processing equipment using the substrate tray KR20120042383A (en)

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KR1020100104063A KR20120042383A (en) 2010-10-25 2010-10-25 Substrate tray and substrate processing equipment using the substrate tray

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Cited By (5)

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KR20160008267A (en) 2014-07-14 2016-01-22 주식회사 윈스 User's behavior analysis system on the network based video surveillance system
KR101877337B1 (en) * 2012-06-18 2018-07-11 주식회사 원익아이피에스 Ion injection apparatus and tray therefor
KR20190060129A (en) * 2017-11-24 2019-06-03 주성엔지니어링(주) Tray for transferring substrate and manufacturing method thereof
KR20210086997A (en) 2020-01-01 2021-07-09 채령 The one-way-ring/two-way-ring network QRN KEY distribution way adopted to hybrid-quantum channel and The hybrid quantum communication unit and The hybrid quantum communication closure net system distributing different kinds of key
CN114334753A (en) * 2021-12-29 2022-04-12 苏州昶明微电子科技合伙企业(有限合伙) Primary and secondary nested tray

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101877337B1 (en) * 2012-06-18 2018-07-11 주식회사 원익아이피에스 Ion injection apparatus and tray therefor
KR20160008267A (en) 2014-07-14 2016-01-22 주식회사 윈스 User's behavior analysis system on the network based video surveillance system
KR20190060129A (en) * 2017-11-24 2019-06-03 주성엔지니어링(주) Tray for transferring substrate and manufacturing method thereof
KR20210086997A (en) 2020-01-01 2021-07-09 채령 The one-way-ring/two-way-ring network QRN KEY distribution way adopted to hybrid-quantum channel and The hybrid quantum communication unit and The hybrid quantum communication closure net system distributing different kinds of key
KR20210086947A (en) 2020-01-01 2021-07-09 채령 The one-way-ring/two-way-ring network QRN KEY distribution way adopted to hybrid-quantum channel and The hybrid quantum communication unit and The hybrid quantum communication closure net system distributing different kinds of key
KR20210087000A (en) 2020-01-01 2021-07-09 채령 The one-way-ring/two-way-ring network QRN KEY distribution way adopted to hybrid-quantum channel and The hybrid quantum communication unit and The hybrid quantum communication closure net system distributing different kinds of key
KR20210086999A (en) 2020-01-01 2021-07-09 채령 The one-way-ring/two-way-ring network QRN KEY distribution way adopted to hybrid-quantum channel and The hybrid quantum communication unit and The hybrid quantum communication closure net system distributing different kinds of key
KR20210086996A (en) 2020-01-01 2021-07-09 채령 The one-way-ring/two-way-ring network QRN KEY distribution way adopted to hybrid-quantum channel and The hybrid quantum communication unit and The hybrid quantum communication closure net system distributing different kinds of key
KR20210086998A (en) 2020-01-01 2021-07-09 채령 The one-way-ring/two-way-ring network QRN KEY distribution way adopted to hybrid-quantum channel and The hybrid quantum communication unit and The hybrid quantum communication closure net system distributing different kinds of key
KR20210087127A (en) 2020-01-01 2021-07-12 채령 The one-way-ring/two-way-ring network quantum key distribution way adopted to hybrid-quantum channel and The hybrid quantum communication unit and The hybrid quantum communication closure net system distributing different kinds of key
CN114334753A (en) * 2021-12-29 2022-04-12 苏州昶明微电子科技合伙企业(有限合伙) Primary and secondary nested tray

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