KR20120037719A - Light emitting device and method for fabricating the light emitting device - Google Patents

Abstract

PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve stability and minimize damage in a manufacturing process. CONSTITUTION: A light emitting structure(120) includes a first conductive semiconductor layer(122), an active layer(124), and a second conductive semiconductor layer(126). A passivation layer(180) surrounds a part of the light emitting structure. A conductive support layer(170) surrounds a part of the light emitting structure and the passivation layer. A barrier layer(110) is located on a part of the first conductive semiconductor layer, the passivation layer, and the conductive support layer. A difference of work functions between the barrier layer and the first conductive semiconductor layer is 50 eV or more.

Description

Light emitting device and method for manufacturing the light emitting device {Light emitting device and method for fabricating the light emitting device}

The embodiment relates to a light emitting device.

Light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have various colors such as red, green, blue and ultraviolet rays due to the development of thin film growth technology and device materials. It is possible to realize efficient white light by using fluorescent materials or combining colors, and it has low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Has an advantage.

Therefore, a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to diode lighting devices, automotive headlights and traffic lights.

The embodiment is to improve the light extraction efficiency of the light emitting device, and to improve the stability of the light emitting device.

Embodiments include a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A passivation layer surrounding at least a portion of the light emitting structure; A conductive support layer surrounding at least a portion of the passivation layer and the light emitting structure; And a barrier layer disposed on at least a portion of the conductive support layer, the passivation layer, and the first conductive semiconductor layer.

In this case, the barrier layer may be formed of a material having a difference between a first conductivity type semiconductor layer and a work function value greater than or equal to a reference value.

The conductive support layer may include one or more of nickel (Ni-nickel), platinum (Pt), titanium (Ti), tungsten (W) vanadium (V), iron (Fe), and molybdenum (Mo).

The conductive support layer may be deposited by a sputtering deposition method.

At least one groove may be formed on a surface of the barrier layer and the first conductivity-type semiconductor layer, and the passivation layer may not be exposed as the groove is formed.

The groove formed on the surface of the first conductivity type semiconductor layer may be provided with an uneven structure.

Another embodiment includes forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; Forming a passivation layer surrounding at least a portion of the light emitting structure; Forming a conductive support layer surrounding the passivation layer and at least a portion of the light emitting structure; And forming a barrier layer on at least a portion of the conductive support layer, the passivation layer, and the first conductive semiconductor layer.

In this case, the barrier layer may be formed of a material having a difference between a first conductivity type semiconductor layer and a work function value greater than or equal to a reference value.

   The conductive support layer may be deposited by a sputtering deposition method.

The method of manufacturing the light emitting device may further include forming at least one groove on a surface of the barrier layer and the first conductivity type semiconductor layer, and the passivation layer may not be exposed according to the groove formation.

The embodiment has the effect of increasing the light extraction efficiency and stability while minimizing damage that may occur in the manufacturing process of the light emitting device.

1 is a view showing a cross section of a first embodiment of a light emitting device;
2A to 2I are views showing a manufacturing method of the first embodiment of the light emitting device;
3 is a cross-sectional view of a first embodiment of a light emitting device package.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the above embodiments, each layer (region), region, pattern or structures may be "on" or "under" the substrate, each layer (layer), region, pad or pattern. In the case of what is described as being formed, "on" and "under" include both being formed "directly" or "indirectly" through another layer. In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

1 is a cross-sectional view of a first embodiment of a light emitting device.

As shown in FIG. 1. The light emitting device of the first embodiment includes a bonding layer 150 formed on the support substrate 160, a conductive support layer 170 formed on the bonding layer 150, a reflective layer 140 formed on the conductive support layer 170, and a reflective layer ( The light emitting structure 120 and the light emitting structure 120 including the ohmic layer 130, the first conductive semiconductor layer 122, the active layer 124, and the second conductive semiconductor layer 126 formed on the 140. The passivation layer 180, the first conductivity type semiconductor layer 122, the passivation layer 180, and the barrier layer 110 positioned on the conductive support layer 170, which surrounds at least a portion thereof, and the first conductivity type semiconductor layer 122. ) May include a first electrode layer 190 formed on the substrate.

As shown, the light emitting device may be provided with a bonding layer 150 and a conductive support layer 170 on the support substrate 160.

The conductive support layer 170 surrounds at least a portion of the reflective layer 140, the passivation layer 180, and the ohmic layer 130. The conductive support layer 170 is a material selected from the group consisting of nickel (Ni-nickel), platinum (Pt), titanium (Ti), tungsten (W) vanadium (V), iron (Fe), and molybdenum (Mo). Or they may be made of an alloy optionally included.

The conductive support layer 170 is deposited to surround at least a portion of the light emitting structure 120 and the passivation layer 180, thereby minimizing mechanical damage (breaking or peeling, etc.) that may occur during the manufacturing process of the light emitting device. There is.

The reflective layer 150 is a metal layer including aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, or Rh. Can be done. Aluminum or silver may effectively reflect light generated from the active layer 124 to greatly improve the light extraction efficiency of the light emitting device.

In addition, the ohmic layer 130 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and IGTO (indium). gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn , Pt, Au, Hf may be formed to include, but are not limited to such materials.

The first conductivity-type semiconductor layer 122 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant, and the first conductivity type semiconductor layer 112 may be an N-type semiconductor layer. In this case, the first conductive dopant is an N-type dopant, and may include Si, Ge, Sn, Se, Te, but is not limited thereto.

In addition, the active layer 124 may be formed by integrating electrons injected through the first conductivity-type semiconductor layer 122 and holes injected through the second conductivity-type semiconductor layer 126 that are formed thereafter to form an active layer (light emitting layer) material. It is a layer that emits light with energy determined by the energy band.

The second conductivity-type semiconductor layer 126 may be a Group III _- V compound semiconductor doped with a second conductivity type dopant, for example, In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ And 1, 0 ≦ x + y ≦ 1). When the second conductive semiconductor layer 126 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, Ba, and the like as a P-type dopant.

In addition, the passivation layer 180 surrounding at least a portion of the light emitting structure 120 and the ohmic layer 13 may be made of an insulating material, and the insulating material may be made of an oxide or nitride which is non-conductive. As an example, the passivation layer 180 may be formed of a silicon oxide (SiO ₂ ) layer, an oxynitride layer, or an aluminum oxide layer.

The barrier layer 110 is positioned on at least a portion of the first conductivity type semiconductor layer 122, the passivation layer 180, and the conductive support layer 170.

The barrier layer 110 may be formed of a material having a difference between a first conductivity type semiconductor layer 122 and a work function value greater than or equal to a reference value. For example, the barrier layer 110 is a material having a difference between a material forming the first conductive semiconductor layer 122 and a work function value of 50 eV or more, which is a reference value, and has a Schottky characteristic with the first conductive semiconductor layer 122. It may be composed of a material forming.

The barrier layer 110 solves a problem in which the conductive support layer 170 is close to the first conductivity type semiconductor layer 122 or the active layer 124, which may cause leakage or short circuit of electrons or holes. There is an effect that can increase the stability of the light emitting device.

The first electrode 190 may include molybdenum, chromium (Cr), nickel (Ni), gold (Au), aluminum (Al), titanium (Ti), platinum (Pt), vanadium (V), and tungsten (W). ), Lead (Pd), copper (Cu), rhodium (Rh) and iridium (Ir) of any one selected from a metal or an alloy of the metals.

Detailed description of each configuration will be described in detail with reference to FIGS. 2A to 2I.

2A to 2I are views showing a manufacturing method of the first embodiment of the light emitting device.

The substrate 100 is prepared as shown in FIG. 2A. The substrate 100 may include a conductive substrate or an insulating substrate, for example, at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ 0 ₃ . Can be used. An uneven structure may be formed on the substrate 100, but is not limited thereto. Impurities on the surface may be removed by wet cleaning the substrate 100.

In addition, a barrier layer 110 is formed on the substrate 100. In this case, the barrier layer 110 may be formed of a material whose difference between the first conductivity type semiconductor layer 122 and a work function is greater than or equal to a reference value.

For example, the barrier layer 110 is a material having a difference between a material forming the first conductive semiconductor layer 122 and a work function value of 50 eV or more, which is a reference value, and has a Schottky characteristic with the first conductive semiconductor layer 122. It may be composed of a material forming.

In this case, the reference value may be set to various values, and as the reference value is set higher, the conductive support layer 170 is closer to the first conductivity-type semiconductor layer 122 or the active layer 124 as described below. The problem that leakage may occur or short-circuit is solved, and the effect of improving stability of the light emitting device is high.

For example, when the first conductivity-type semiconductor layer is an N-type semiconductor layer, the barrier layer 110 may be P-type GaN or AIN, and may include Mg, Zn, Ca, Sr, Ba, and the like as a P-type dopant. You can do it

The thickness of the barrier layer 110 may be variously set according to various embodiments. For example, the thickness of the barrier layer 110 may be set to 10nm ~ 5㎛.

In addition, the light emitting structure 120 including the first conductive semiconductor layer 122, the active layer 124, and the second conductive semiconductor layer 126 may be formed on the barrier layer 110.

In this case, a buffer layer (not shown) is formed between the light emitting structure 120 and the substrate 100, between the barrier layer 110 and the substrate 100, or between the barrier layer 110 and the first conductive semiconductor layer 122. H) to mitigate the difference in lattice mismatch and thermal expansion coefficient of the material. The material of the buffer layer may be formed of at least one of Group III-V compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. An undoped semiconductor layer may be formed on the buffer layer, but is not limited thereto.

In addition, the light emitting structure 120 may be grown by vapor deposition such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and hydraulic vapor phase epitaxy (HVPE).

The first conductive semiconductor layer 122 may be implemented as a group III-V compound semiconductor doped with a first conductive dopant, and the first conductive semiconductor layer 112 is an N-type semiconductor layer. The first conductive dopant may be an N-type dopant and may include Si, Ge, Sn, Se, or Te, but is not limited thereto.

The first conductive semiconductor layer 122 may be formed of a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It may include. The first conductive semiconductor layer 112 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP. have.

The first conductivity type semiconductor layer 122 may form an N-type GaN layer using a chemical vapor deposition method (CVD), molecular beam epitaxy (MBE), sputtering, or hydroxide vapor phase epitaxy (HVPE). . In addition, the first conductivity type semiconductor layer 122 includes a silane containing n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and silicon (Si) in the chamber. The gas SiH ₄ may be injected and formed.

The active layer 124 has an energy band inherent in the active layer (light emitting layer) material because electrons injected through the first conductive semiconductor layer 122 and holes injected through the second conductive semiconductor layer 126 formed thereafter meet each other. It is a layer that emits light with energy determined by.

The active layer 124 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. For example, the active layer 114 may be formed by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The well layer / barrier layer of the active layer 124 is formed of one or more pair structures of InGaN / GaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs, / AlGaAs (InGaAs), GaP / AlGaP (InGaP). It may be, but is not limited to such. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A conductive cladding layer (not shown) may be formed on or under the active layer 124. The conductive clad layer may be formed of an AlGaN-based semiconductor, and may have a higher band gap than the band gap of the active layer 124.

The second conductivity-type semiconductor layer 126 may be a Group III-V compound semiconductor doped with a second conductivity type dopant, for example, In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, Semiconductor material having a composition formula of 0 ≦ x + y ≦ 1). When the second conductive semiconductor layer 126 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, Ba, and the like as a P-type dopant.

The second conductivity type semiconductor layer 126 is a bicetyl cyclone containing p-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and magnesium (Mg) in the chamber. Pentadienyl magnesium (EtCp ₂ Mg) {Mg (C ₂ H ₅ C ₅ H ₄ ) ₂ } may be injected to form a p-type GaN layer, but is not limited thereto.

In an embodiment, the first conductive semiconductor layer 122 may be a P-type semiconductor layer, and the second conductive semiconductor layer 126 may be an N-type semiconductor layer. In addition, an N-type semiconductor layer (not shown) may be formed on the second conductive semiconductor layer 126 when the semiconductor having a polarity opposite to that of the second conductive type, for example, the second conductive semiconductor layer is a P-type semiconductor layer. have. Accordingly, the light emitting structure 120 may be implemented as any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

As shown in FIG. 2B, the side surface of the light emitting structure 120 is etched to generate the passivation layer 180. In this case, when a material forming the barrier layer 110 is detected by an endpoint detecting method, a portion of the side surface of the light emitting structure 120 may be etched by stopping the etching.

As shown in FIG. 2C, a passivation layer 180 may be deposited on the side of the light emitting structure 120. Here, the passivation layer 180 may be made of an insulating material, and the insulating material may be made of an oxide or nitride which is non-conductive. As an example, the passivation layer 180 may be formed of a silicon oxide (SiO ₂ ) layer, an oxynitride layer, or an aluminum oxide layer.

The ohmic layer 130 is stacked on the second conductive semiconductor layer 126 to a thickness of about 200 angstroms.

The ohmic layer 130 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin (IGTO). oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt At least one of Au, Hf, and the like may be formed, and the material is not limited thereto. The ohmic layer 1300 may be formed by sputtering or electron beam deposition.

In addition, the reflective layer 140 may be formed on the ohmic layer 130 to a thickness of about 2,500 ounces. The reflective layer 150 may be formed of a metal layer including aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, or Rh. have. Aluminum or silver may effectively reflect light generated from the active layer 124 to greatly improve the light extraction efficiency of the light emitting device.

As shown in FIG. 2D, the conductive support layer 170 is formed to surround at least a portion of the reflective layer 140, the passivation layer 180, and the ohmic layer 130. The conductive support layer 170 is a material selected from the group consisting of nickel (Ni-nickel), platinum (Pt), titanium (Ti), tungsten (W) vanadium (V), iron (Fe), and molybdenum (Mo). Or they may be made of an alloy optionally included.

In this case, the conductive support layer 170 may be formed using a sputtering deposition method. When using the sputtering deposition method, when ionized atoms are accelerated by an electric field and collide with the source material of the conductive support layer 170, atoms of the source material are ejected and deposited. In addition, according to the embodiment, an electrochemical metal deposition method, a bonding method using a eutectic metal, or the like may be used. In some embodiments, the conductive support layer 170 may be formed of a plurality of layers.

The conductive support layer 170 is deposited to surround at least a portion of the light emitting structure 120 and the passivation layer 180, thereby minimizing mechanical damage (breaking or peeling, etc.) that may occur during the manufacturing process of the light emitting device. There is.

As shown in FIG. 2E, the support substrate 160 may be formed on the conductive support layer 170. The support substrate 160 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al) or an alloy containing them selectively. In addition, gold (Au), copper alloy (Cu Alloy), nickel (Ni-nickel), copper-tungsten (Cu-W), carrier wafers (e.g. GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe) , Ga ₂ O _3, etc.) may be optionally included. The support substrate 160 may be formed using an electrochemical metal deposition method, a bonding method using a eutectic metal, or the like.

In some embodiments, when holes are injected into the second conductive semiconductor layer 126 through the conductive support layer 170, the support substrate 160 may be made of an insulating material. It may be made of nitride. For example, the support substrate 160 may include a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

In order to bond the conductive support layer 170 and the support substrate 160, gold (Au), tin (Sn), indium (In), silver (Ag), nickel (Ni), niobium (Nb) and The bonding layer 150 may be formed of a material selected from the group consisting of copper (Cu) or an alloy thereof.

And, as shown in Figure 2f, the substrate 100 is separated.

The substrate 100 may be removed by a laser lift off (LLO) method using an excimer laser or the like, or may be a dry or wet etching method.

For example, when the laser lift-off method focuses and irradiates excimer laser light having a predetermined wavelength toward the substrate 100, thermal energy is applied to the interface between the substrate 110 and the light emitting structure 120. As the interface is concentrated and separated into gallium and nitrogen molecules, separation of the substrate 100 occurs at a portion where the laser light passes.

As shown in FIG. 2G, the barrier layer 110 and the first conductivity-type semiconductor layer 122 are etched to form grooves. The groove may be formed by a dry etching process using a mask. At this time, as the groove is formed, the passivation layer 180 may adjust the position of the groove to be etched so as not to be exposed.

As the groove is formed, the barrier layer 110 is positioned on at least a portion of the first conductive semiconductor layer 122, the passivation layer 180, and the conductive support layer 170, as shown in FIG. 2G.

The barrier layer 110 solves a problem in which the conductive support layer 170 is close to the first conductivity type semiconductor layer 122 or the active layer 124, which may cause leakage or short circuit of electrons or holes. There is an effect that can increase the stability of the light emitting device.

That is, the conductive support layer 170 is formed to surround at least a portion of the light emitting structure 120 as described above, thereby minimizing the mechanical damage (breaking or peeling, etc.) that can occur during the manufacturing process of the light emitting device package. There is a problem that electrons or holes may leak or be shorted in contact with the first conductivity-type semiconductor layer 122, but the barrier layer 110 may solve such a problem and may occur during the manufacturing process of the light emitting device. While minimizing possible mechanical damage, there is an effect of improving the stability of the light emitting device by solving the electron or hole leakage or short circuit problem of the conductive support layer 170.

As shown in FIG. 2G, light extraction efficiency is improved by forming a groove on the first conductivity-type semiconductor layer 122.

A portion of the first conductive semiconductor layer 122 is etched into the groove, and a portion of the active layer 124 and the second conductive semiconductor layer 126 may be etched, and light generated from the active layer 124 emits light. It is possible to reduce the distance to travel inside the device, and to reduce the amount of light absorbed and scattered inside the device.

As shown in FIG. 2H, an uneven structure is formed on the first conductivity type semiconductor layer 122. At this time, the uneven structure can be formed by etching after forming a PEC method or a mask.

In the PEC method, by adjusting the amount of the etchant (eg, KOH) and the etching rate difference due to GaN crystallinity, it is possible to control the shape of the irregularities of the fine size. The uneven structure also has the effect of increasing the surface area of the first conductivity-type semiconductor layer 122, so that the number of floors and valleys is generally better.

In addition, according to an embodiment, a two-dimensional photonic crystal may be formed on the surface of the first conductivity-type semiconductor layer 122, and the structure may periodically form at least two dielectrics having different refractive indices at a period of about half the wavelength of light. Can be obtained by arranging. At this time, each dielectric may be provided in the same pattern with each other.

The photonic crystal may control the flow of light by forming a photonic band gap on the surface of the first conductivity type semiconductor layer 122.

The groove and pattern structure of the light emitting structure can increase the light extraction effect by increasing the surface area of the light emitting structure, and the fine concavo-convex structure on the surface can reduce the absorption of light in the light emitting structure, thereby increasing the luminous efficiency.

As illustrated in FIG. 2I, a first electrode 190 may be formed on the surface of the first conductivity-type semiconductor layer. The first electrode 190 may include molybdenum, chromium (Cr), nickel (Ni), gold (Au), aluminum (Al), titanium (Ti), platinum (Pt), vanadium (V), tungsten (W), It is made of any one metal selected from lead (Pd), copper (Cu), rhodium (Rh) and iridium (Ir) or an alloy of the metals. The first electrode 190 may also be formed on a part of the first conductive semiconductor layer 122 by using a mask. The first electrode 190 may be configured in various forms.

3 is a cross-sectional view of a first embodiment of a light emitting device package.

As shown, the light emitting device package according to the above-described embodiments, the package body 320, the first electrode layer 311 and the second electrode layer 312 provided on the package body 320, and the package body ( The light emitting device 300 according to the exemplary embodiment installed in the 320 and electrically connected to the first electrode layer 311 and the second electrode layer 312, and the filler 340 surrounding the light emitting device 300 are included. do.

The package body 320 may include a silicon material, a synthetic resin material, or a metal material. An inclined surface may be formed around the light emitting device 300 to increase light extraction efficiency.

The first electrode layer 311 and the second electrode layer 312 are electrically separated from each other, and provide power to the light emitting device 300. In addition, the first electrode layer 311 and the second electrode layer 312 can increase the light efficiency by reflecting the light generated from the light emitting device 300, the outside of the heat generated from the light emitting device 300 May also act as a drain.

The light emitting device 300 may be installed on the package body 320 or on the first electrode layer 311 or the second electrode layer 312.

The light emitting device 300 may be electrically connected to the first electrode layer 311 and the second electrode layer 312 by any one of a wire method, a flip chip method, or a die bonding method.

The filler 340 may surround and protect the light emitting device 300. In addition, the filler 340 may include a phosphor to change the wavelength of light emitted from the light emitting device 300.

The light emitting device package may mount at least one of the light emitting devices of the above-described embodiments as one or more, but is not limited thereto.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp and a street lamp. .

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

100 substrate 110 barrier layer
120: light emitting structure 122: first conductive semiconductor layer
124: active layer 126: second conductive semiconductor layer
130: ohmic layer 140: reflective layer
150: bonding layer 160: supporting substrate
170: conductive support layer 180: passivation layer
190: first electrode 300: light emitting device
311: first electrode layer 312: second electrode layer
320: package body 340: filler

Claims (10)

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A passivation layer surrounding at least a portion of the light emitting structure;
A conductive support layer surrounding at least a portion of the passivation layer and the light emitting structure; And
A barrier layer on at least a portion of the conductive support layer, the passivation layer, and the first conductive semiconductor layer
Light emitting device comprising a. The method of claim 1,
The difference between the work function of the barrier layer and the first conductive semiconductor layer is greater than 50 eV. The method of claim 1,
The conductive support layer includes at least one of nickel (Ni-nickel), platinum (Pt), titanium (Ti), tungsten (W) vanadium (V), iron (Fe), molybdenum (Mo). The method of claim 1,
The conductive support layer is a light emitting device is deposited by the sputter deposition method. The method of claim 1,
At least one groove is formed on a surface of the barrier layer and the first conductivity-type semiconductor layer, and the passivation layer is not exposed as the groove is formed. The method of claim 5,
The light emitting device is provided with a concave-convex structure in the groove formed on the surface of the first conductive semiconductor layer. Forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
Forming a passivation layer surrounding at least a portion of the light emitting structure;
Forming a conductive support layer surrounding the passivation layer and at least a portion of the light emitting structure; And
Forming a barrier layer on at least a portion of the conductive support layer, the passivation layer and the first conductive semiconductor layer
Method of manufacturing a light emitting device comprising a. The method of claim 7, wherein
And a difference in a work function between the barrier layer and the first conductive semiconductor layer is greater than 50 eV. The method of claim 7, wherein
The conductive support layer is a method of manufacturing a light emitting device is deposited by a sputtering deposition method. The method of claim 7, wherein
Forming at least one groove on a surface of the barrier layer and the first conductivity type semiconductor layer
Further comprising:
The passivation layer is not exposed as the groove is formed.

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