KR20120036643A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20120036643A
KR20120036643A KR1020100098425A KR20100098425A KR20120036643A KR 20120036643 A KR20120036643 A KR 20120036643A KR 1020100098425 A KR1020100098425 A KR 1020100098425A KR 20100098425 A KR20100098425 A KR 20100098425A KR 20120036643 A KR20120036643 A KR 20120036643A
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KR
South Korea
Prior art keywords
layer
light emitting
electrode
emitting device
trench
Prior art date
Application number
KR1020100098425A
Other languages
Korean (ko)
Inventor
김명수
김성균
임우식
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020100098425A priority Critical patent/KR20120036643A/en
Publication of KR20120036643A publication Critical patent/KR20120036643A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Abstract

PURPOSE: A light emitting device is provided to reduce a phenomenon that an electrode is exfoliated from a light transmission electrode layer by improving a contact area of the light transmission electrode layer. CONSTITUTION: A buffer layer(120) is formed on a substrate(110). A light emitting structure is formed on the buffer layer. The light emitting structure comprises a first conductivity semiconductor layer(130), an active layer(140), and a second conductivity semiconductor layer(150). A light transmission electrode layer(160) including a trench is formed on the light emitting structure. A current blocking layer(170) is formed between the light transmission electrode layer and the second conductivity semiconductor layer. One area of the current blocking layer is exposed by the trench. A head is projected from the light transmission electrode layer.

Description

Light Emitting Device

An embodiment relates to a light emitting device.

Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. The nitride light emitting device generates light using an energy band gap of an active layer positioned between an n-type GaN semiconductor layer and a p-type GaN semiconductor layer.

In such nitride semiconductors, the p-type GaN semiconductor layer must be connected to an electrode for providing a drive current to the active layer, and the electrode is usually connected to the p-type GaN semiconductor layer through a light transmissive electrode layer in order to properly spread the drive current. However, when the p-type GaN semiconductor layer and the electrode are connected through the light-transmissive electrode layer, the electrode is supported only by the adhesive force with the light-transmissive electrode layer, so that if the adhesion is not sufficiently secured, poor contact may occur or the electrode may peel off from the light-transmissive electrode layer. have. Accordingly, there is a need for a light emitting device that minimizes peeling of electrodes positioned on the light transmissive electrode layer and improves electrical contact characteristics.

The embodiment provides a light emitting device which forms a trench in the light transmissive electrode layer, fixes the electrode through the trench, minimizes interfacial separation of the electrode, and reduces contact failure of the electrode.

The light emitting device according to the embodiment includes a substrate, a light emitting structure disposed on the substrate, the light emitting structure having an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, and positioned on the light emitting structure, and having a trench in one region. A transmissive electrode layer disposed between the transmissive electrode layer and the second conductive semiconductor layer, the current limiting layer exposing a region by the trench, and an electrode inserted into the trench to contact the current limiting layer It includes.

Here, the electrode may be composed of a head forming a bonding surface with the light transmitting electrode layer, the body extending from the head is inserted into the trench, the body in contact with the current limiting layer through the trench.

In addition, the length of the contact surface of the head of the electrode in contact with the translucent electrode layer may be set larger than the width in the width direction of the body.

The embodiment improves the contact area between the electrode and the transparent electrode layer, thereby reducing the peeling of the electrode from the transparent electrode layer, improving the electrical contact state of the electrode, as well as driving current applied to the electrode toward the active layer. Can be properly spread.

1 schematically shows a cross section of a light emitting device according to an embodiment.
2 to 4 are reference views for explaining the structure of the first electrode shown in FIG.
5 and 6 show experimental data on the characteristics of the first electrode when an external force is applied to the light emitting device and the conventional light emitting device according to the embodiment.
7 is a cross-sectional view of a light emitting device package including a light emitting device according to embodiments.
8A is a perspective view illustrating a lighting device including a light emitting device module according to an embodiment, and FIG. 8B is a cross-sectional view illustrating a cross-sectional view taken along line AA ′ of the lighting device of FIG. 8A.
9 is an exploded perspective view of a liquid crystal display according to an embodiment.
10 is an exploded perspective view of a liquid crystal display according to the exemplary embodiment.

In the description of embodiments, each layer, region, pattern, or structure is “under” a substrate, each layer (film), region, pad, or “on” of a pattern or other structure. In the case of being described as being formed on the upper or lower, the "on", "under", upper, and lower are "direct" "directly" or "indirectly" through other layers or structures.

In addition, the description of the positional relationship between each layer or structure, please refer to this specification, or drawings attached to this specification.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size and area of each component does not necessarily reflect the actual size or area.

Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

1 schematically shows a cross section of a light emitting device according to an embodiment.

Referring to FIG. 1, the light emitting device according to the embodiment may include a substrate 110, a buffer layer 120, a first conductive semiconductor layer 130, an active layer 140, a second conductive semiconductor layer 150, and a transparent electrode layer 160. ), A current limiting layer 170, and a first electrode 180 and a second electrode 190.

The substrate 110 may be formed of any one of sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP and GaAs. After manufacturing the light emitting device, the substrate 110 may be replaced with a silicon material having excellent thermal conductivity by a process such as flip chip bonding.

In this embodiment, the substrate 110 will be described based on the sapphire substrate. In this case, a PSS (Patterned SubStrate) structure may be provided on the upper surface of the substrate 110 to increase light extraction efficiency. The substrate 110 referred to herein may or may not have a PSS structure.

A buffer layer 120 for reducing the lattice mismatch of the first conductive semiconductor layer 130 may be formed on the substrate 110 in a low temperature atmosphere, and may be formed of a material such as GaN, InN, AlN, AlInN, InGaN, AlGaN, and InAlGaN. Can be selected from among them.

The first conductive semiconductor layer 130, the active layer 140, and the second conductive semiconductor layer 150 may be sequentially formed on the buffer layer 120 to form a light emitting structure.

The first conductive semiconductor layer 130 may include an n-type semiconductor layer, the n-type semiconductor layer is InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x + y≤1) A semiconductor material having a compositional formula of, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like can be selected, and n-type dopants such as Si, Ge, C, and Sn can be doped. .

The second electrode 190 is disposed on one side of the first conductive semiconductor layer 130. When the first conductive semiconductor layer 130 is doped with an n-type dopant, a “−” current may be applied to the second electrode 190.

The active layer 140 may be a semiconductor layer to which a light emitting material made of indium gallium nitride (InGaN) is added. Process conditions for the growth of the active layer 140, for example, using a nitrogen gas as a carrier (carrier) gas at a growth temperature of 780 ℃ supplying NH3, TMGa, and trimethylindium (TMIn), the active layer 140 made of InGaN ) Can be grown to a thickness of 120 kV to 1200 kV. In this case, the active layer 140 may have a stacked structure in which the molar ratio of each elemental component of InGaN is grown at a difference.

In addition, the active layer 140 may be formed of one of a single quantum well structure, a multi quantum well structure (MQW), a quantum wire structure, and a quantum dot structure. However, the present embodiment will be described based on the multi quantum well structure, but the present invention is not limited thereto.

The second conductive semiconductor layer 150 may be formed of a P-type GaN layer and supplies holes to the active layer 140 by a driving current applied from the outside to generate light by combining holes and electrons in the active layer 140. You can do that. In addition, a transparent conductive layer (ITO) 160 may be formed between the second conductive semiconductor layer 150 and the first electrode 180 to which a current is applied to emit light generated from the active layer 140 to the outside. .

The transparent electrode layer 160 includes ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, and may reduce contact resistance and spread current between the second conductive semiconductor layer 150 and the first electrode 180. It can play a role of.

In addition, the transparent electrode layer 160 is preferably made of a transparent or semi-transparent material so that the light emitted from the active layer 140 can be easily directed to the outside, the light generated from the active layer 140 in the upper region is well emitted to the outside. A light extracting structure may be formed that allows for the light to be extracted. The light extraction structure may give a roughness to the upper surface of the transparent electrode layer 160 or give a prism structure so that the light generated in the active layer 140 can be efficiently emitted.

One region of the translucent electrode layer 160 may be etched to form a trench. The trench may be formed deep so that the top of the current limiting layer 170 is exposed. The first electrode 180 may be formed on the transparent electrode layer 160 and may contact the current limiting layer 170 through a trench. One region of the first electrode 180 protrudes from an upper end of the transparent electrode layer 160, and the remaining region contacts the current limiting layer 170 through a trench. Accordingly, the first electrode 180 may be firmly supported by the trench formed in the transparent electrode layer 160, thereby reducing the interface peeling phenomenon caused by the external force. In addition, since the contact area with the transparent electrode layer 160 is increased by the curved surface formed along the trench, the electrical contact state may be improved. This will be described later in detail.

The current limiting layer 170 is positioned between the light transmissive electrode layer 160 and the second conductive semiconductor layer 150 so that a current concentration path is not formed from the first electrode 180 to the second conductive semiconductor layer 150. . When a driving current is applied to the first electrode 180, a current concentrating path that is directly directed from the first electrode 180 to the second conductive semiconductor layer 150 may be formed, and the active layer 140 may be formed by the current concentrating path. Of course, the luminous efficiency is reduced, and the active layer 140 may be damaged. Accordingly, the current limiting layer 170 is preferably located in an area facing the first electrode 180, and the driving current applied through the first electrode 180 is to be spread to the surrounding transparent electrode layer 160. It is desirable to be formed of a low conductivity material so that. For example, the current limiting layer 170 may be formed of SiO 2 .

2 to 4 illustrate reference drawings for explaining the structure of the first electrode 180 illustrated in FIG. 1. 1 to 4 together, the transparent electrode layer 160 has a trench formed in one region by an etching process, the trench is formed to face the center of the current limiting layer 170, the current limiting layer ( The upper side of 170 may be exposed. In order for the trench to have a screw shape in which the first electrode 180 is embedded in the trench, the trench may have a narrow width direction and a long length direction. In the present embodiment, the trench width 10 d? 200Å, and the longitudinal width d2 is 10Å? 3000Å can be formed.

When the upper side of the current limiting layer 170 is exposed by the trench formed by the etching process, the trench may be buried by the deposition process to form the body 182 of the first electrode 180. In order for the first electrode 180 to be firmly supported by the transparent electrode layer 160, the first electrode 180 includes a head 181 exposed from the transparent electrode layer 160 and a body 182 embedded in a trench. Can be.

As the body 182 of the first electrode 180 is embedded in the trench, even when the external force F is applied to the head 181, the head 181 may not move in the Mv direction. In contrast to the conventional method in which the first electrode is attached to the translucent electrode layer, the first electrode 180 according to the embodiment is screw-coupled with the translucent electrode layer 160, so that the translucent electrode layer may be formed by an external force F or a temperature change. 160 may not be easily peeled off.

On the other hand, as the body 182 of the first electrode 180 is embedded in the trench, the surface of the body 182 and the inner wall of the trench are in contact, so that the contact area between the body 182 and the inner wall of the trench is increased. Can be. The first electrode 180 and the trench are formed by d2 in which the body 182 and the inner wall of the trench contact each other, and an increase in the cross-sectional length d4 of the contact surface in which the upper surface of the translucent electrode layer 160 and the lower surface of the head 181 contact. In proportion, the contact area between the head 181 and the transparent electrode layer 160 increases.

As the first electrode 180 fills the trench and increases the contact area with the light transmissive electrode layer 160, the first electrode 180 is second conductive through the light transmissive electrode layer 160 or the current limiting layer 170. When providing a driving current to the semiconductor layer 150, the possibility of a problem due to a poor contact of the first electrode 180 may be reduced.

On the other hand, since the cross section of the first electrode 180 has a T-shape, when the external force F is applied, the position of the body 182 embedded in the trench resists the external force F.

5 and 6 illustrate experimental data on characteristics of the first electrode 180 when an external force is applied to the light emitting device and the conventional light emitting device according to the embodiment.

First, FIG. 5 illustrates the force required to move the first electrode 180 in the light transmissive electrode layer 160. Referring to FIG. 5, the first electrode 180 of the light emitting device according to the embodiment may move in the translucent electrode layer 160 when a force of 61.9817 g / mm is applied. In FIG. 5, SiO 2 on the left side represents that formed on the current limiting layer 170, and P-GaN on the right side represents a conventional light emitting device, that is, when the first electrode 180 is attached to the light transmitting electrode layer 160. Experimental data is shown. When simply attaching and forming the first electrode 180 to the transparent electrode layer 160, a force of 59.857 g / mm is required, but the first electrode 180 according to the embodiment may be moved by applying more force. it means. That is, the first electrode 180 does not move in the transparent electrode layer 160 unless a greater force is applied as compared to the method of attaching to the transparent electrode layer 160.

Next, FIG. 6 illustrates a force required to move the first electrode 180 by pulling a wire (not shown) bonded to the first electrode 180.

Wires are bonded to the first electrode 180 and the second electrode 190, and the bonded wires are connected to a driving current. In the experiment of pulling the wire bonded to the first electrode 180, the first electrode 180 of the light emitting device according to the embodiment can be moved in the transparent electrode layer 160 when pulling the wire with a force of 18.2448g / mm When the first electrode 180 was simply attached to the transparent electrode layer 160, it was observed to be moved from the transparent electrode layer 160 when the first electrode 180 was pulled with a force of 14.1035 g / mm. That is, the first electrode 180 formed by filling the trench exposing the current limit 170 in the light transmissive electrode layer 160 exhibits better physical properties than the simple attaching method to the light transmissive electrode layer 160. The durability and reliability of the light emitting device can be improved.

7 is a cross-sectional view of a light emitting device package including a light emitting device according to embodiments.

Referring to FIG. 7, the light emitting device package 200 according to the embodiment may include a body 230, a first conductive layer 210 and a second conductive layer 220 installed on the body 230, and a body 230. The light emitting device 100 according to the embodiment, which is installed at and supplied with power from the first conductive layer 210 and the second conductive layer 220, and a molding member 240 surrounding the light emitting device 100. .

The body 230 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first conductive layer 210 and the second conductive layer 220 are electrically separated from each other, and provide power to the light emitting device 100.

In addition, the first and second conductive layers 210 and 220 may increase light efficiency by reflecting light generated from the light emitting device 100, and discharge heat generated from the light emitting device 100 to the outside. You may.

The light emitting device 100 may be installed on any one of the first conductive layer 210, the second conductive layer 220, and the body 230. The light emitting device 100 may be formed by a wire method, a die bonding method, a flip chip method, or the like. 2 may be electrically connected to the conductive layers 210 and 220, but is not limited thereto.

The molding member 240 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 240 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

In addition, the light emitting device package 200 may include a chip on board (COB) type, the top surface of the body 230 is flat, and the plurality of light emitting devices 100 may be installed in the body 230.

A plurality of light emitting device packages 200 according to an embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like, which is an optical member, may be disposed on a path of light emitted from the light emitting device package 200. have. The light emitting device package 200, the substrate, and the optical member may function as a backlight unit. Another embodiment may be implemented as a lighting unit including the light emitting device 100 or the light emitting device package 200 described in the above-described embodiments, for example, the lighting unit may be a display device, an indicator device, a lamp, It may include a street lamp.

FIG. 8A is a perspective view illustrating a lighting device including a light emitting device module according to an embodiment, and FIG. 8B is a cross-sectional view illustrating a cross section taken along line AA ′ of the lighting device of FIG. 8A.

Hereinafter, in order to describe the shape of the lighting apparatus 300 according to the embodiment in more detail, the longitudinal direction (Z) of the lighting apparatus 300, the horizontal direction (Y) perpendicular to the longitudinal direction (Z), and the length The height direction X perpendicular to the direction Z and the horizontal direction Y will be described.

That is, FIG. 8B is a cross-sectional view of the lighting apparatus 300 of FIG. 8A cut in the plane of the longitudinal direction Z and the height direction X, and viewed in the horizontal direction Y. FIG.

8A and 8B, the lighting device 300 may include a body 310, a cover 330 fastened to the body 310, and a closing cap 350 positioned at both ends of the body 310. have.

The lower surface of the body 310 is fastened to the light emitting device module 340, the body 310 is conductive and so as to emit heat generated from the light emitting device 344 to the outside through the upper surface of the body 310 It may be formed of a metal material having an excellent heat dissipation effect.

The light emitting device 344 may be mounted on the PCB substrate 342 in multiple colors and in multiple rows to form an array. The light emitting devices 344 may be mounted at equal intervals or may be mounted at various separation distances as necessary to adjust brightness. have. The PCB substrate 342 may be a MCPCB (Metal Core PCB) or a PCB made of FR4.

In particular, the plurality of light emitting devices 344 includes a light transmissive electrode layer (not shown) having an increased contact area, thereby reducing the peeling off of the light transmissive electrode layer (not shown), and the electrical contact state of the electrode (not shown) is reduced. The improved and applied driving current applied to the electrode (not shown) can be properly spread toward the active layer (not shown), thereby implementing a reliable light emitting device module 340.

The cover 330 may be formed in a circular shape to surround the lower surface of the body 310, but is not limited thereto.

The cover 330 protects the light emitting device module 340 from the outside and the like. In addition, the cover 330 may include diffusing particles to prevent glare of the light generated from the light emitting device 344 and to uniformly emit light to the outside, and also at least any one of the inner and outer surfaces of the cover 330. A prism pattern or the like may be formed on one surface. In addition, a phosphor may be applied to at least one of an inner surface and an outer surface of the cover 330.

On the other hand, since the light generated from the light emitting device 344 is emitted to the outside through the cover 330, the cover 330 should be excellent in light transmittance and have sufficient heat resistance to withstand the heat generated by the light emitting device 344. For example, the cover 330 may be formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like.

Closing cap 350 is located at both ends of the body 310 may be used for sealing the power supply (not shown). In addition, the closing cap 350 is formed with a power pin 352, the lighting device 300 according to the embodiment can be used immediately without a separate device to the terminal from which the existing fluorescent lamps are removed.

9 is an exploded perspective view of a liquid crystal display according to an embodiment.

9 is an edge-light method, and the liquid crystal display device 400 may include a liquid crystal display panel 410 and a backlight unit 470 for providing light to the liquid crystal display panel 410.

The liquid crystal display panel 410 may display an image using light provided from the backlight unit 470. The liquid crystal display panel 410 may include a color filter substrate 412 and a thin film transistor substrate 414 facing each other with the liquid crystal interposed therebetween.

The color filter substrate 412 may implement a color of an image displayed through the liquid crystal display panel 410.

The thin film transistor substrate 414 is electrically connected to the printed circuit board 418 on which a plurality of circuit components are mounted through the driving film 417. The thin film transistor substrate 414 may apply a driving voltage provided from the printed circuit board 418 to the liquid crystal in response to a driving signal provided from the printed circuit board 418.

The thin film transistor substrate 414 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 470 may convert the light provided from the light emitting device module 420, the light emitting device module 420 into a surface light source, and provide the light guide plate 430 to the liquid crystal display panel 410. Reflective sheet reflecting the light emitted to the light guide plate 430 to the plurality of films 450, 466, 464 and the light guide plate 430 to uniform the luminance distribution of the light provided from the light source 430 and to improve vertical incidence ( 440).

The light emitting device module 420 may include a PCB substrate 422 such that a plurality of light emitting devices 424 and a plurality of light emitting devices 424 may be mounted to form an array.

In particular, the light emitting device 424 includes a light transmissive electrode layer (not shown) with an increased contact area, thereby reducing the phenomenon of peeling from the light transmissive electrode layer (not shown) and improving an electrical contact state of the electrode (not shown). The driving current applied to the electrode (not shown) can be properly spread toward the active layer (not shown), thereby enabling the implementation of the reliable backlight unit 470.

On the other hand, the backlight unit 470 is a diffusion film 466 for diffusing light incident from the light guide plate 430 toward the liquid crystal display panel 410, and a prism film 450 for condensing the diffused light to improve vertical incidence. It may be configured as), and may include a protective film 464 for protecting the prism film 450.

10 is an exploded perspective view of a liquid crystal display device including the optical sheet according to the embodiment. However, the parts shown and described in FIG. 9 will not be repeatedly described in detail.

10 illustrates a direct method, the liquid crystal display 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510.

Since the liquid crystal display panel 510 is the same as that described with reference to FIG. 10, detailed description thereof will be omitted.

The backlight unit 570 includes a plurality of light emitting device modules 523, a reflective sheet 524, a lower chassis 530 in which the light emitting device modules 523 and the reflective sheet 524 are accommodated, and an upper portion of the light emitting device module 523. It may include a diffusion plate 540 and a plurality of optical film 560 disposed in the.

Light emitting device module 523 A plurality of light emitting devices 522 and a plurality of light emitting devices 522 may be mounted to include a PCB substrate 521 to form an array.

In particular, the light emitting device 522 includes a light transmissive electrode layer (not shown) with an increased contact area, thereby reducing the phenomenon of peeling from the light transmissive electrode layer (not shown) and improving an electrical contact state of the electrode (not shown). The driving current applied to the electrode (not shown) can be appropriately spread toward the active layer (not shown), thereby enabling the reliable backlight unit 570 to be implemented.

The reflective sheet 524 reflects the light generated from the light emitting element 522 in the direction in which the liquid crystal display panel 510 is located to improve light utilization efficiency.

Meanwhile, the light generated by the light emitting device module 523 is incident on the diffusion plate 540, and the optical film 560 is disposed on the diffusion plate 540. The optical film 560 includes a diffusion film 566, a prism film 550, and a protective film 564.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

110 substrate 120 buffer layer
130: first conductive semiconductor layer 140: active layer
150: second conductive semiconductor layer 160: transmissive conductive layer
170: current limiting layer 180: first electrode
182: head 182: body
190: second electrode

Claims (6)

A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A translucent electrode layer on the light emitting structure and having a trench in one region;
A current confined layer positioned between the light transmissive electrode layer and the second conductive semiconductor layer and exposing a region by the trench; And
And a region in which one region is inserted into the trench to contact the current limiting layer, and the region protrudes on the light transmissive electrode layer. The method of claim 1,
The width direction width of the trench is smaller than the maximum width of the electrode. The method of claim 1,
The trench,
Is the width in the width direction 10Å? Light emitting element of 200 mW. The method of claim 1,
The trench,
Is the length direction 10Å? Light emitting element of 3000 mW. The method of claim 1,
The electrode
A head protruding from the light transmitting electrode layer; And
And a body extending from the head and contacting the current confined layer through the trench. The method of claim 5,
The length of the bonding surface which the head and the transparent electrode layer is in contact with the light emitting element is larger than the width in the width direction of the body.
KR1020100098425A 2010-10-08 2010-10-08 Light emitting device KR20120036643A (en)

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Application Number Priority Date Filing Date Title
KR1020100098425A KR20120036643A (en) 2010-10-08 2010-10-08 Light emitting device

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Application Number Priority Date Filing Date Title
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Country Status (1)

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