KR20110137309A - 노광장치, 노광방법 및 디바이스 제조방법 - Google Patents

노광장치, 노광방법 및 디바이스 제조방법 Download PDF

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Publication number
KR20110137309A
KR20110137309A KR1020117021229A KR20117021229A KR20110137309A KR 20110137309 A KR20110137309 A KR 20110137309A KR 1020117021229 A KR1020117021229 A KR 1020117021229A KR 20117021229 A KR20117021229 A KR 20117021229A KR 20110137309 A KR20110137309 A KR 20110137309A
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KR
South Korea
Prior art keywords
light
optical system
pattern
deflection member
substrate
Prior art date
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Ceased
Application number
KR1020117021229A
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English (en)
Korean (ko)
Inventor
도루 기우치
히데오 미즈타니
Original Assignee
가부시키가이샤 니콘
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Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20110137309A publication Critical patent/KR20110137309A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020117021229A 2009-03-13 2010-03-05 노광장치, 노광방법 및 디바이스 제조방법 Ceased KR20110137309A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US20258009P 2009-03-13 2009-03-13
US61/202,580 2009-03-13
US12/692,443 2010-01-22
US12/692,443 US8264666B2 (en) 2009-03-13 2010-01-22 Exposure apparatus, exposure method, and method of manufacturing device

Publications (1)

Publication Number Publication Date
KR20110137309A true KR20110137309A (ko) 2011-12-22

Family

ID=42169502

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117021229A Ceased KR20110137309A (ko) 2009-03-13 2010-03-05 노광장치, 노광방법 및 디바이스 제조방법

Country Status (6)

Country Link
US (1) US8264666B2 (https=)
JP (1) JP5534176B2 (https=)
KR (1) KR20110137309A (https=)
CN (1) CN102362227B (https=)
TW (1) TWI453547B (https=)
WO (1) WO2010104162A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20180120800A (ko) * 2012-07-13 2018-11-06 가부시키가이샤 니콘 노광 장치 및 노광 방법

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JP5451175B2 (ja) * 2009-05-15 2014-03-26 サンエー技研株式会社 露光装置
US9348462B2 (en) * 2012-06-13 2016-05-24 Maxim Integrated Products, Inc. Gesture detection and recognition based upon measurement and tracking of light intensity ratios within an array of photodetectors
WO2014041941A1 (ja) 2012-09-14 2014-03-20 株式会社ニコン 基板処理装置及びデバイス製造方法
WO2014073535A1 (ja) * 2012-11-06 2014-05-15 株式会社ニコン 偏光ビームスプリッタ、基板処理装置、デバイス製造システム及びデバイス製造方法
CN105308507B (zh) * 2013-06-14 2018-12-25 株式会社尼康 基板处理装置以及器件制造方法
CN106933073A (zh) * 2013-10-22 2017-07-07 应用材料公司 具有主动对准的卷对卷无掩模光刻
CN110451316B (zh) * 2014-09-04 2021-01-05 株式会社尼康 基板处理装置
GB2530768B (en) * 2014-10-01 2019-07-17 Kratos Analytical Ltd Method and apparatuses relating to cleaning an ion source
KR102206992B1 (ko) * 2015-02-27 2021-01-25 가부시키가이샤 니콘 기판 처리 장치, 디바이스 제조 방법
JP6723831B2 (ja) * 2016-06-01 2020-07-15 株式会社オーク製作所 露光装置
CN109031899A (zh) * 2018-09-29 2018-12-18 苏州源卓光电科技有限公司 一种高分辨率高效率投影光刻成像系统及曝光方法
DE102022200539A1 (de) 2022-01-18 2022-11-17 Carl Zeiss Smt Gmbh Optisches System für die Projektionslithographie

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US5652645A (en) * 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
RU2084941C1 (ru) 1996-05-06 1997-07-20 Йелстаун Корпорейшн Н.В. Адаптивный оптический модуль
US5923403A (en) * 1997-07-08 1999-07-13 Anvik Corporation Simultaneous, two-sided projection lithography system
TW448487B (en) * 1997-11-22 2001-08-01 Nippon Kogaku Kk Exposure apparatus, exposure method and manufacturing method of device
JP3376935B2 (ja) 1999-01-25 2003-02-17 ウシオ電機株式会社 帯状ワークの露光装置
JP4307813B2 (ja) 2001-11-14 2009-08-05 株式会社リコー 光偏向方法並びに光偏向装置及びその光偏向装置の製造方法並びにその光偏向装置を具備する光情報処理装置及び画像形成装置及び画像投影表示装置及び光伝送装置
US6900915B2 (en) * 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
EP1324136A1 (en) * 2001-12-28 2003-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
TWI298825B (en) * 2002-06-12 2008-07-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7095546B2 (en) * 2003-04-24 2006-08-22 Metconnex Canada Inc. Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
WO2004094301A1 (en) 2003-04-24 2004-11-04 Metconnex Canada Inc. A micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
US7292308B2 (en) * 2004-03-23 2007-11-06 Asml Holding N.V. System and method for patterning a flexible substrate in a lithography tool
CN100339754C (zh) * 2004-04-28 2007-09-26 友达光电股份有限公司 应用于反射式平面显示器的反射电极的制作方法及光罩
JP4335114B2 (ja) 2004-10-18 2009-09-30 日本碍子株式会社 マイクロミラーデバイス
KR20070100964A (ko) * 2005-02-03 2007-10-15 가부시키가이샤 니콘 광학 적분기, 조명 광학 장치, 노광 장치, 및 노광 방법
US7738081B2 (en) * 2005-05-06 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing a flat panel display handler with conveyor device and substrate handler
JP4542495B2 (ja) 2005-10-19 2010-09-15 株式会社目白プレシジョン 投影露光装置及びその投影露光方法
KR20080103564A (ko) 2006-02-16 2008-11-27 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4929762B2 (ja) 2006-03-03 2012-05-09 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JP5362259B2 (ja) * 2008-05-14 2013-12-11 大日本スクリーン製造株式会社 画像記録装置
JP5487981B2 (ja) * 2009-01-30 2014-05-14 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP5397748B2 (ja) * 2009-02-25 2014-01-22 株式会社ニコン 露光装置、走査露光方法、およびデバイス製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180120800A (ko) * 2012-07-13 2018-11-06 가부시키가이샤 니콘 노광 장치 및 노광 방법
KR20190091574A (ko) * 2012-07-13 2019-08-06 가부시키가이샤 니콘 디바이스 제조 방법

Also Published As

Publication number Publication date
US20100265483A1 (en) 2010-10-21
TWI453547B (zh) 2014-09-21
JP2010217877A (ja) 2010-09-30
TW201035698A (en) 2010-10-01
CN102362227A (zh) 2012-02-22
WO2010104162A1 (en) 2010-09-16
JP5534176B2 (ja) 2014-06-25
CN102362227B (zh) 2014-06-18
US8264666B2 (en) 2012-09-11

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