KR20110116036A - Ｓｏｉ 웨이퍼의 제조 방법 - Google Patents

Ｓｏｉ 웨이퍼의 제조 방법 Download PDF

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Publication number
KR20110116036A
KR20110116036A KR1020117019761A KR20117019761A KR20110116036A KR 20110116036 A KR20110116036 A KR 20110116036A KR 1020117019761 A KR1020117019761 A KR 1020117019761A KR 20117019761 A KR20117019761 A KR 20117019761A KR 20110116036 A KR20110116036 A KR 20110116036A
Authority
KR
South Korea
Prior art keywords
wafer
insulating film
soi
ion implantation
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117019761A
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English (en)
Korean (ko)
Inventor
히로지 아가
이사오 요코카와
노부히코 노토
Original Assignee
신에쯔 한도타이 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신에쯔 한도타이 가부시키가이샤 filed Critical 신에쯔 한도타이 가부시키가이샤
Publication of KR20110116036A publication Critical patent/KR20110116036A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Element Separation (AREA)
  • Weting (AREA)
KR1020117019761A 2009-02-26 2010-01-08 Ｓｏｉ 웨이퍼의 제조 방법 Ceased KR20110116036A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009043403A JP5244650B2 (ja) 2009-02-26 2009-02-26 Ｓｏｉウェーハの製造方法
JPJP-P-2009-043403 2009-02-26

Publications (1)

Publication Number Publication Date
KR20110116036A true KR20110116036A (ko) 2011-10-24

Family

ID=42665227

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117019761A Ceased KR20110116036A (ko) 2009-02-26 2010-01-08 Ｓｏｉ 웨이퍼의 제조 방법

Country Status (6)

Country Link
US (1) US20110281420A1 (https=)
EP (1) EP2402983B1 (https=)
JP (1) JP5244650B2 (https=)
KR (1) KR20110116036A (https=)
CN (1) CN102326227A (https=)
WO (1) WO2010098007A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150013164A (ko) * 2012-05-24 2015-02-04 신에쯔 한도타이 가부시키가이샤 Soi 웨이퍼의 제조방법
KR20150052041A (ko) * 2012-09-03 2015-05-13 신에쯔 한도타이 가부시키가이샤 Soi 웨이퍼의 제조방법

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009124060A1 (en) 2008-03-31 2009-10-08 Memc Electronic Materials, Inc. Methods for etching the edge of a silicon wafer
EP2359390A1 (en) 2008-11-19 2011-08-24 MEMC Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
JP5477277B2 (ja) * 2010-12-20 2014-04-23 信越半導体株式会社 Ｓｏｉウェーハの製造方法
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
JP6056516B2 (ja) * 2013-02-01 2017-01-11 信越半導体株式会社 Ｓｏｉウェーハの製造方法及びｓｏｉウェーハ
US9177967B2 (en) * 2013-12-24 2015-11-03 Intel Corporation Heterogeneous semiconductor material integration techniques
CN105280541A (zh) * 2015-09-16 2016-01-27 中国电子科技集团公司第五十五研究所 一种用于超薄半导体圆片的临时键合方法及去键合方法
FR3076393A1 (fr) * 2017-12-28 2019-07-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de transfert d'une couche utile

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
JPH11121310A (ja) * 1997-10-09 1999-04-30 Denso Corp 半導体基板の製造方法
JP3030545B2 (ja) 1997-07-19 2000-04-10 信越半導体株式会社 接合ウエーハの製造方法
DE69917819T2 (de) * 1998-02-04 2005-06-23 Canon K.K. SOI Substrat
JP4313874B2 (ja) * 1999-02-02 2009-08-12 キヤノン株式会社 基板の製造方法
JP4304879B2 (ja) 2001-04-06 2009-07-29 信越半導体株式会社 水素イオンまたは希ガスイオンの注入量の決定方法
FR2880184B1 (fr) * 2004-12-28 2007-03-30 Commissariat Energie Atomique Procede de detourage d'une structure obtenue par assemblage de deux plaques
US20080315349A1 (en) * 2005-02-28 2008-12-25 Shin-Etsu Handotai Co., Ltd. Method for Manufacturing Bonded Wafer and Bonded Wafer
JP2007141946A (ja) * 2005-11-15 2007-06-07 Sumco Corp Ｓｏｉ基板の製造方法及びこの方法により製造されたｓｏｉ基板

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150013164A (ko) * 2012-05-24 2015-02-04 신에쯔 한도타이 가부시키가이샤 Soi 웨이퍼의 제조방법
KR20150052041A (ko) * 2012-09-03 2015-05-13 신에쯔 한도타이 가부시키가이샤 Soi 웨이퍼의 제조방법

Also Published As

Publication number Publication date
CN102326227A (zh) 2012-01-18
JP2010199353A (ja) 2010-09-09
US20110281420A1 (en) 2011-11-17
EP2402983A1 (en) 2012-01-04
EP2402983B1 (en) 2015-11-25
WO2010098007A1 (ja) 2010-09-02
JP5244650B2 (ja) 2013-07-24
EP2402983A4 (en) 2012-07-25

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