KR20110105635A - Hand device and multi-hand device for wafer transportation - Google Patents

Hand device and multi-hand device for wafer transportation Download PDF

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KR20110105635A
KR20110105635A KR1020100024880A KR20100024880A KR20110105635A KR 20110105635 A KR20110105635 A KR 20110105635A KR 1020100024880 A KR1020100024880 A KR 1020100024880A KR 20100024880 A KR20100024880 A KR 20100024880A KR 20110105635 A KR20110105635 A KR 20110105635A
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South Korea
Prior art keywords
gas
space
wafer transfer
hand
discharge end
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KR1020100024880A
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Korean (ko)
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고현준
김종형
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서울과학기술대학교 산학협력단
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Priority to KR1020100024880A priority Critical patent/KR20110105635A/en
Publication of KR20110105635A publication Critical patent/KR20110105635A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • B25J15/06—Gripping heads and other end effectors with vacuum or magnetic holding means
    • B25J15/0616—Gripping heads and other end effectors with vacuum or magnetic holding means with vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • B25J15/06—Gripping heads and other end effectors with vacuum or magnetic holding means
    • B25J15/0616—Gripping heads and other end effectors with vacuum or magnetic holding means with vacuum
    • B25J15/0683—Details of suction cup structure, e.g. grooves or ridges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer

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  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer transfer hand apparatus and a wafer transfer multihand apparatus, wherein a gas inflow acts as a passage through which gas is introduced, and a cylindrical gas turning space in which gas can turn and a gas swinging are discharged downward. It is characterized by being formed as a center pillar accommodated in the gas turning space having a smaller diameter than the gas turning space, the inclined discharge end is inclined to extend to the lower than the gas turning space at the bottom to be a multi-step stairs. Therefore, the wafer transfer hand device and the wafer transfer multi-hand device according to the present invention can reduce the pneumatic loss than the conventional hand device by adjusting the size of the gas inlet path, deformation of the inclined discharge end and formation of the center column. there was. In addition, the pneumatic pressure is uniformly discharged to minimize vibrations and to prevent warpage of the wafer, thereby stably supporting the wafer on a wide surface.

Description

HAND DEVICE AND MULTI-HAND DEVICE FOR WAFER TRANSPORTATION}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transfer apparatus for moving a substrate for semiconductor wafers, LCDs, and OLEDs, and more particularly, to a wafer transfer hand apparatus and a wafer transfer multihand apparatus for moving wafers and substrates in a non-contact manner.

When the semiconductor wafer (hereinafter referred to as "wafer") and the substrates for LCD and OLED are transferred to the next process or moved within the same process by using a transfer device in the manufacturing stage, scratches or defects occur due to mechanical contact, Problems such as warping and breakage during transportation and contamination by particles occurred. Accordingly, there is a need for a non-contact transfer apparatus for processing wafer transfer sheet by sheet.

There is a non-contact transfer device using the Bernoulli principle, there is no damage or marks on the surface of the product, there is an advantage that can be transported film, thin film, wide product.

Here, Bernoulli's principle is the law on the relationship between speed, pressure and height for a case where an ideal fluid without viscosity and compressibility flows regularly. The following equation is derived from the law that the sum of potential and kinetic energy of a fluid is constant.

Figure pat00001

P: pressure of fluid

v: fluid velocity

g: acceleration of gravity

h: height of the point with respect to the reference plane

ρ: density

Under the condition that the height h of the point with respect to the reference plane is constant, Bernoulli's theorem shows that as the speed of the fluid increases, the pressure inside the fluid decreases, and conversely, when the speed decreases, the internal pressure increases.

1 is a prior art hand device 10 according to the Bernoulli principle, which is mounted on a wafer transfer device to support a wafer W positioned below it in a non-contact manner. As shown, the hand apparatus 10 is provided with a gas inflow path 11, has a gas swing space 12, and a discharge end 13 is formed at a lower end of the gas swing space 12.

Pneumatic pressure is introduced into the gas turning space 12 through the gas inlet (11). The pneumatic pressure introduced through the gas inlet 11 generates swirl flow along the circumference of the gas swirl space 12 and is ejected through the discharge end 13. The swirl flow generated in the gas swirl space 12 has a high velocity, and the inside of the gas swirl space 12 forms a negative pressure according to the Bernoulli principle that the pressure is lowered in the fast fluid flow section. On the other hand, since the space in which the wafer W is maintained maintains the existing pressure, it has a higher pressure than the gas turning space 12. The negative pressure formed in the gas swing space 12 generates a force for lifting the wafer W, and the underside of the wafer W has a relatively high pressure to hold the wafer W. This makes it possible to support the wafer W and to enable wafer transfer in a non-contact manner.

Meanwhile, substrates for wafers, LCDs, and OLEDs are getting thinner and larger in size, depending on market demands. In particular, wafer sizes of 6,8 inches to 12 inches are currently used, and larger wafers are expected to be developed in the future.

The prior art hand device is suitable for use with existing 6 inch and 8 inch wafers. However, when moving 12-inch wafers using the existing hand device, there was a loss of incoming air pressure, and it was difficult to uniformly support a large area wafer in the horizontal direction because the incoming air pressure was not ejected uniformly. There was a problem of vibration generation between the hand devices and warp of the wafer.

Therefore, the present invention has been made in order to solve the problems described above, the problem to be solved by the present invention is to reduce the loss of pneumatic pressure flowing into the hand device and to uniformly eject the pneumatic pressure to provide a stable support for the wafer and to warp the wafer. Its purpose is to provide a way to prevent it.

In order to achieve this object, in one aspect of the present invention, a wafer transfer hand apparatus has a cylindrical gas turning space in which gas can turn, and a gas inflow path allowing gas from outside to flow into the gas turning space. It is formed, the first body portion is formed in the inclined discharge end is inclined to extend than the gas swing space at the bottom so that the gas to be rotated downward; A center column covering an upper surface of a first body portion, the lower surface of the center body being accommodated in the gas turning space having a diameter smaller than that of the gas turning space; The second body portion is formed; Characterized in that consists of.

And, the inclined discharge end is characterized in that formed in a multi-layered step.

In addition, the length of the gas inlet is characterized in that it has a length of 23mm to 27mm, the diameter of 2.3mm to 2.7mm.

In addition, the height of the center pillar is characterized in that the smaller than the height of the gas swing space.

In addition, the gas has a cylindrical gas turning space that can turn the gas, a gas inlet path is formed to allow the gas flowing from the outside into the gas turning space, and the lower gas so that the gas to be turned is discharged to the bottom An inclined discharge end inclined to extend beyond the gas swing space; It is formed, the inclined discharge end is characterized in that formed in a multi-layered step.

On the other hand, in order to achieve this object, in one aspect of the present invention, a multi-handed wafer transfer apparatus has a cylindrical gas turning space in which gas can turn, and a gas which allows gas from outside to flow into the gas turning space. A plurality of hand modules having an inflow path formed therein and having an inclined discharge end that is inclined to extend from the gas turning space at a lower end thereof so that the turning gas is discharged downward; And a plate covering the upper surfaces of the plurality of hand modules, the lower surface of which is formed with a plurality of central pillars accommodated in the gas swing space.

And the plurality of hand modules are characterized in that they are arranged with the same distance from each other in the space of the plate.

And the inclined discharge end is characterized in that formed in a multi-layered step.

In addition, the gas inlet is characterized in that the length of 23mm to 27mm, the diameter of 2.3mm to 2.7mm.

And the height of the center pillar is characterized in that less than the height of the gas swing space.

In addition, the gas has a cylindrical gas turning space that can turn the gas, a gas inlet path is formed to allow the gas flowing from the outside into the gas turning space, and the lower gas so that the gas to be turned is discharged to the bottom An inclined discharge end that is inclined to extend from the gas swing space, wherein the inclined discharge end comprises a plurality of hand modules formed in a multi-layered step; And a plate covering upper surfaces of the plurality of hand modules, the lower surface having a plurality of central pillars accommodated in the gas swing space. Characterized in that consists of.

In addition, the plurality of hand modules are characterized in that they are arranged with the same distance between the neighboring hand modules in the space of the plate.

The wafer transfer hand apparatus according to the present invention can reduce the pneumatic loss than using the conventional hand apparatus by adjusting the size of the gas inlet, deformation of the inclined discharge end and formation of the center column. In addition, the pneumatic pressure is uniformly discharged to minimize vibrations and to prevent warpage of the wafer, thereby stably supporting the wafer on a wide surface.

1 is a view showing a conventional wafer transfer hand device.
2 is a view showing a wafer transfer hand apparatus according to the present invention.
Figure 3 is a design diagram for the flow analysis of the wafer transfer hand device according to the present invention.
Figure 4 is a graph showing the flow analysis results of the wafer transfer hand device according to the present invention.
Figure 5 is a graph showing the flotation force of the wafer transfer hand device according to the present invention.
Figure 6 is a view showing a multi-hand wafer transfer apparatus according to the present invention.

Hereinafter, with reference to the accompanying drawings to be described in more detail with respect to the present invention will be described with reference to a preferred embodiment.

Figure 2 is a view showing a hand device according to the present invention, Figure 3 is a flow analysis design of the hand device according to the invention, Figure 4 is a view showing the flow analysis of the hand device according to the invention. In addition, Figure 5 is a graph showing the lifting force of the hand device according to the invention, Figure 6 is a view showing a multi-hand device for wafer transfer according to the present invention.

First Embodiment

2 is an exploded perspective view of the first body unit 110 and the second body unit 120 for convenience of description by the hand device 100 according to the present invention. A gas inflow path 111 is formed on the upper side of the first body part 110, and has a gas turning space 112, and an inclined discharge end 113 is formed thereon. A gas distributor 121 is formed in the second body portion 120 and has a central column 122.

The gas distributor 121 has two inlets 121a that are subjected to pneumatic pressure and is formed at two right angles around the inlet 121a, and is formed on the inner side of the second body part 120. In addition, the outlet 121b of the gas distributor 121 is designed to be in contact with the inlet 111a of the gas inlet 111 so that air pressure is applied to the gas inlet 111 along the two pipes of the gas distributor 121. To pass.

The gas inflow path 111 is formed above the first body 110 and is connected to the gas turning space 112. The pneumatic pressure transmitted vertically from the gas distributor 121 flows into the gas turning space 112 horizontally along the gas inflow path 111.

The gas swing space 112 is an empty cylindrical space formed inside the cylindrical first body 110. The pneumatic pressure coming from the gas inlet 111 is a space for generating the swirl flow and the internal pressure is lowered due to the swirl flow having a high speed.

The central column 122 is a hollow cylinder inside, and is located in the upper center of the gas turning space 112. The introduced pneumatic pressure rotates along the outer circumference of the center column 122 to generate a swirl flow. This swirl flow has a faster rotational speed than the swirl flow produced by the prior art by reducing the cross-sectional area of the moving direction in which the gas rotates. The result is a fast turning swivel flow which makes it possible to produce an effective swivel flow. In addition, the height h1 of the central column 122 has a smaller value than the height h2 of the gas swing space 112. Pneumatic pressure introduced through the gas inlet 111 has a predetermined initial speed while turning the central column (122). When the swirl flows out of the center pillar 122 to form a large area of swirl flow with velocity and is discharged onto the wafer, a uniform swirl flow may be ejected. If the height is the same as the height of the gas swing space 112, the formed swirl flow will reach to the inclined discharge portion 123 along the central pillar 122 will not be able to discharge a uniform swirl flow.

The inclined discharge end 113 is an outlet through which the swirl flow formed extending from the gas swing space 112 exits. According to the enlarged view of the inclined discharge end 113 shown in FIG. 2, the inclined discharge end 113 in the present invention is formed in a multi-layered stepped manner and has an inclined surface so that the edges are enlarged to the outside, and is indicated by an arrow in the enlarged view. The stream rotates with a large area along the layer and is discharged to the lower wafer surface by gravity. Since the swirl flows along the layer, the time to descend onto the wafer is slowed down and has a lot of revolutions. As a result, the swirl flow is more widely and uniformly discharged to the outside, thereby stably supporting the wafer.

The following is experimental data showing the results of the flow analysis according to the size of the gas inlet 111 and the central column 122 of the hand device 100.

3 is a design drawing for the flow analysis of the hand device 100. As shown in FIG. 3, the data of one path velocity is analyzed and the pneumatic loss is determined, and the two Eddy viscosity are compared to determine whether the internal flow field can be generated smoothly. In No. 3, No. 1 and 2 can be calculated to check the flotation force of the wafer and the uniformity of the generated swirl flow.

According to FIG. 3, Table 1 shows data showing the values of pass velocity, edifice, and wafer velocity of the hand apparatus 100 according to the length and diameter of the gas inlet 111. The pass velocity represents the pass velocity of the pneumatic pressure measured at the gas inflow path 111 when the pneumatic pressure having the pass velocity of 40 m / s is introduced. The higher the value, the smaller the loss of pneumatic pressure. Eddy Biscorti is a value that can confirm the swirl flow generated in the gas swing space 112, the wafer Villoti is a value that shows the effect that the supplied pneumatic pressure is formed in the gas swing space 112 and substantially affects the wafer .

According to the length and diameter of the gas inlet 111, the size of the gas inlet 111 having the most optimal value can be determined. According to the data, the preferred size of the gas inlet 111 is 25 mm in length and 2.5 mm in diameter.

Path velocity [m / s] 1mm in diameter Diameter 1.5mm 2mm in diameter Diameter 2.5mm 15mm length 39.2 39.67 39.59 39.1 Length 20 mm 38.57 39.32 38.78 39.39 Length 25mm 39.16 39.34 39.34 39.42 Length 30mm 38.66 39.19 39.16 39.31 Eddy viscosity [Pa] 1mm in diameter Diameter 1.5mm 2mm in diameter Diameter 2.5 15mm length 0.001211 0.0008086 0.0009389 0.00115 Length 20 mm 0.001354 0.000789 0.001938 0.001193 Length 25mm 0.003614 0.0008351 0.001571 0.001274 Length 30mm 0.001597 0.0008724 0.00094 0.001183 Eddy
viscosity [Pa] 1mm in diameter Diameter 1.5mm 2mm in diameter Diameter 2.5 15mm length 0.001211 0.0008086 0.0009389 0.00115 Length 20 mm 0.001354 0.000789 0.001938 0.001193 Length 25mm 0.003614 0.0008351 0.001571 0.001274 Length 30mm 0.001597 0.0008724 0.00094 0.001183

Table 2 is the flow analysis result data of the hand device 100 according to the diameter and length of the central column 122, Table 3 is the flow analysis result data of the hand device 100 depending on the presence or absence of the central column 122, 3 is a comparison graph of the buoyancy force with or without the central column 122.

In Tables 2 and 3, the meanings of the values of pass velocity, wafer velocity, and eddy biscorti have the same meanings as described above. This is the result of dividing the plane into 4 planes and analyzing the swirl flow generated in each section. 4 (a) shows a vector 1, FIG. 4 (b) shows a vector 2, FIG. 4 (c) shows a vector 3, and FIG. 4 (d) shows a vector 4.

According to the optimum result of Table 2, the preferred size of the center column 122 is 20 mm in diameter and 20 mm in height.

Path velocity [m / s] 10mm diameter 20 mm diameter 30 mm diameter 15mm in height 40.08 40.19 39.6 20mm in height 40.2 39.9 39.55 25mm in height 40.14 39.73 39.61 Wafer velocity [m / s] 10mm diameter 20 mm diameter 30 mm diameter 15mm in height 3.34 3.929 3.883 20mm in height 3.856 3.475 3.896 25mm in height 3.332 3.439 3.469 Vector4
velocity [m / s] 10mm diameter 20 mm diameter 30 mm diameter 15mm in height 2.76719 3.56974 3.24964 20mm in height 3.49293 3.12567 3.09588 25mm in height 2.88512 3.22727 3.25492

In addition, it can be seen from Table 3 that the hand device 100 equipped with the central pillar 122 has a better flow analysis value than the hand device without the central pillar 122. According to the data, in the case of the pass velocity, the center pillar 122 is present, 40.7 m / s, the center pillar 122 is not present 30.962 m / s and the difference occurs 10m / s. In the case of Eddy Biscorti, if the center pillar 122 is present, 0.0002661pa, and if it does not exist, the difference of about 0.0000117 occurs. Also, if the center column 122 is present, vector 1 has a value of 7.0498 m / s, vector 2 has a value of 4.084 m / s, and vector 3 has a value of 2.93925 m / s. Is 3.4743m / s and vector3 is 2.7780m / s. Vector 1 and Vector 2 had a higher value when there was no center pillar 122, but the value of the spiral flow generated and discharged was compensated by 0.16123 m / s when the center pillar 122 was present. As a result, the presence of the center column 122 was confirmed that the swirl flow generation is smoother than the center column 122, and the speed is compensated.

Center pillar oil Center pillarless Path velocity [m / s] 40.7 30.862 Eddy viscosity [Pa] 0.0002661 0.0002544 vector1 velocity [m / s] 7.0498 8.0656 vector2 velocity [m / s] 4.084 3.47433 vector3 velocity [m / s] 2.93925 2.77802

Figure 5 (a) is a graph showing the buoyancy of the hand device 100 equipped with the center pillar 122 of the present invention, Figure 5 (b) shows the buoyancy force of the hand device is not equipped with a central column 122 The graph shown. The line on the graph shows the flotation force of the hand device, and the flotation force can be confirmed by the Y value of the line converged on the X axis. That is, the buoyancy force of the hand apparatus 100 equipped with the central pillar 122 is 0.33936N, and the buoyancy force of the hand apparatus without the central pillar 122 is 0.29569N. According to the results of the graph, the hand device 100 equipped with the central column 122 was able to confirm that the result has a better flotation.

According to an embodiment of the present invention, a gas inlet 111 having a length of 25 mm and a diameter of 2.5 mm is attached to the center of the gas turning space 112 and has a height of 20 mm and a center column 122 having a diameter of 20 mm, in a multi-layered manner. By designing the hand device 100 composed of the inclined discharge end 113 formed, it was possible to reduce the loss of the inlet air pressure, effectively form the swirl flow in the gas swing space 112, and discharge the wide and stable swirl flow outside Could be

Second Embodiment

6 is a diagram of a multihand device 200 of a second embodiment according to the present invention. The multihand device 200 is a device in which a plurality of hand modules 210a, 210b, 210c, and 210d are connected to the plate 220.

In the plate 220, four gas distributors 221 and four center pillars 222a, 222b, 222c, and 222d are formed, holes 223 are formed, and gas is introduced into one hand module 210a. A furnace 211, a gas swing space 212, and an inclined discharge end 213 are formed.

The hole 223 is formed at the center of the plate 220, and the multihand device may be connected to the wafer transfer device by fastening a bolt to the hole 223.

The gas distributor 221 is formed on the inner side of the plate 220, a pneumatic line is connected to the inlet 221a of the gas distributor, the gas is introduced from the outside. This allows air pressure to flow into each of the hand modules 210a, 210b, 210c, and 210d at the same time so that swirl flow can be discharged at the same time.

The gas inflow path 211 receives gas from the gas distributor 221 and is formed above the hand module 210a and is connected to the gas turning space 212. It also has a length of 25 mm and a diameter of 2.5 mm.

The gas turning space 212 is an empty cylindrical space formed in the cylindrical hand module 210a, and the gas entering the gas inflow path 211 forms a swirl flow.

The central column 222a is formed below the plate 220 and is accommodated in the gas swing space 212 so that the swirl flow is effectively formed.

The inclined discharge end 213 is formed to extend from the gas swing space 212, and is an exit through which the swirl flow exits. It is formed in a multi-layered cascade and has an inclined surface so that the edge extends outward.

Four hand modules (210a, 210b, 210c, 210d) are installed in the disk-shaped plate 220 to match the upper, lower, left, and right ends of the plate 220 at the same interval, and the gas inlet of the hand module 210 Reference numeral 211 is connected to each gas distributor 221. In addition, the end of the hand module (210a, 210b, 210c, 210d) coincides with the end of the wafer to support, it is possible to increase the stability when supporting the wafer, hand modules (210a, 210b, 210c, installed at regular intervals) 210d) may prevent the influence on the gas discharged from the surrounding hand modules when the gas introduced therein is discharged.

When supporting a 12-inch wafer using the multi-hand device 200 according to the second embodiment, the wafer may be supported with a pneumatic pressure of 1.6 bar which is 0.4 bar less than that of the prior art which used a conventional pneumatic pressure of 2.0 bar. Could. That is, the loss of the inlet air pressure could be reduced. In addition, the swirl flow was effectively formed in the gas swing space 212 to uniformly eject to the outside to minimize vibration, and by installing the hand module 210 at regular intervals to prevent the interference between the discharged pneumatic pressure to reduce the shake and 12 inches The wafer of was able to be stably supported without bending.

As described above, the detailed description of the present invention has been made by the embodiments with reference to the accompanying drawings. However, since the above-described embodiments have only been described with reference to preferred examples of the present invention, the present invention is limited to the above embodiments. It is not to be understood that the scope of the present invention should be understood by the claims and equivalent concepts described below.

100: hand device
110: first body part
111: gas inlet
112: gas swing space
113: inclined discharge
120: second body part
121: gas distributor
122: center pillar

Claims (12)

The gas has a cylindrical gas turning space that can turn the gas, a gas inlet path is formed to allow the gas flowing from the outside into the gas turning space, the gas at the bottom so that the gas to be turned is discharged to the bottom A first body part extending from the turning space and having an inclined discharge end; And
A second body portion covering an upper surface of the first body portion, and having a central column accommodated in the gas swing space having a diameter smaller than that of the gas swing space; Consist of
Hand device for wafer transfer. The method of claim 1,
The inclined discharge end is characterized in that formed in a multi-layered step
Hand device for wafer transfer. The method of claim 1,
The gas inlet length is 23mm to 27mm, the diameter is characterized in that it has a 2.3mm to 2.7mm
Hand device for wafer transfer. The method of claim 1,
The height of the center pillar is characterized in that less than the height of the gas swing space
Hand device for wafer transfer. Has a cylindrical gas swing space that the aircraft can turn,
A gas inflow path is formed to allow gas introduced from the outside into the gas turning space,
The inclined discharge end is inclined to extend at a lower end of the gas turning space so that the turning gas is discharged downward,
The inclined discharge end is characterized in that formed in a multi-layered step
Hand device for wafer transfer. The gas has a cylindrical gas turning space that can turn the gas, a gas inlet path is formed to allow the gas flowing from the outside into the gas turning space, the gas at the bottom so that the gas to be turned is discharged to the bottom A plurality of hand modules having an inclined discharge end that is inclined to extend from the turning space; And
A plate covering upper surfaces of the plurality of hand modules, the lower surface having a plurality of central pillars accommodated in the gas swing space; Consist of
Multihand device for wafer transfer. The method of claim 6,
The plurality of hand modules are arranged with the same distance between neighboring hand modules in the space of the plate
Multihand device for wafer transfer. The method of claim 6,
The inclined discharge end is characterized in that formed in a multi-layered step
Multihand device for wafer transfer. The method of claim 6,
The gas inlet length is 23mm to 27mm, the diameter is characterized in that it has a 2.3mm to 2.7mm
Multihand device for wafer transfer. The method of claim 6,
The height of the center pillar is characterized in that less than the height of the gas swing space
Multihand device for wafer transfer. The gas has a cylindrical gas turning space that can turn the gas, a gas inlet path is formed to allow the gas flowing from the outside into the gas turning space, the gas at the bottom so that the gas to be turned is discharged to the bottom An inclined discharge end is formed to be inclined to extend from the turning space, and the inclined discharge end includes a plurality of hand modules formed in a multi-layered stepped manner; And a plate covering upper surfaces of the plurality of hand modules, the lower surface having a plurality of central pillars accommodated in the gas swing space. Consist of
Multihand device for wafer transfer. The method of claim 11,
The plurality of hand modules are arranged with the same distance between neighboring hand modules in the space of the plate
Multihand device for wafer transfer.

KR1020100024880A 2010-03-19 2010-03-19 Hand device and multi-hand device for wafer transportation KR20110105635A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3685971A4 (en) * 2017-09-20 2021-06-09 Harmotec Co., Ltd. Suction device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3685971A4 (en) * 2017-09-20 2021-06-09 Harmotec Co., Ltd. Suction device

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